DE10343180A1 - Method for producing a high-temperature-resistant gold wire connection - Google Patents

Method for producing a high-temperature-resistant gold wire connection Download PDF

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Publication number
DE10343180A1
DE10343180A1 DE10343180A DE10343180A DE10343180A1 DE 10343180 A1 DE10343180 A1 DE 10343180A1 DE 10343180 A DE10343180 A DE 10343180A DE 10343180 A DE10343180 A DE 10343180A DE 10343180 A1 DE10343180 A1 DE 10343180A1
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Germany
Prior art keywords
gold
layer
gold wire
aluminum
diffusion barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10343180A
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German (de)
Inventor
Lothar Henneken
Albert-Andreas Hoebel
Ralph Neudert
Immanuel Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
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Robert Bosch GmbH
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Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE10343180A priority Critical patent/DE10343180A1/en
Priority to IT001759A priority patent/ITMI20041759A1/en
Priority to FR0452067A priority patent/FR2860102B1/en
Publication of DE10343180A1 publication Critical patent/DE10343180A1/en
Ceased legal-status Critical Current

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung einer hochtemperaturfesten Golddrahtverbindung für Halbleiterbauelemente, wobei auf den Bondpads (2) eines Wafers (1) eine Katalysatorschicht (6) aufgetragen wird, auf der Katalysatorschicht (6) eine metallische Diffusionssperrschicht (7) abgeschieden wird und abschließend eine Goldschicht (8) aufgetragen wird. Die Verbindung des Golddrahtes (9) mit der Goldschicht (8) erfolgt dann durch ein stoffschlüssiges Fügeverfahren.The invention relates to a method for producing a high-temperature-resistant gold wire connection for semiconductor components, wherein a catalyst layer (6) is applied to the bond pads (2) of a wafer (1), a metallic diffusion barrier layer (7) is deposited on the catalyst layer (6) and finally a Gold layer (8) is applied. The connection of the gold wire (9) with the gold layer (8) is then carried out by a cohesive joining process.

Description

Technisches Gebiettechnical area

Zur elektrischen Kontaktierung von Halbleiterbauelementen wird das Aluminium-Bondpad des Halbleiterbauelementes mit einem Golddraht verschweißt. An die Verbindung zwischen Aluminium-Bondpad und Golddraht werden aufgrund höherer Einsatztemperaturen durch steigende Umgebungstemperaturen, insbesondere im Bereich der Automobilelektronik, und leistungsfähigere Halbleiterbauelemente mit höheren Verlustleistungen zunehmende Anforderungen an die mechanische und elektrische Zuverlässigkeit gestellt.to electrical contacting of semiconductor devices is the aluminum bond pad of the semiconductor device welded to a gold wire. To the Connection between aluminum bondpad and gold wire are due higher Operating temperatures due to rising ambient temperatures, in particular in the field of automotive electronics, and more powerful semiconductor devices with higher Power losses increasing demands on the mechanical and electrical reliability posed.

Bei der direkten Verbindung des Aluminium-Bondpads des Halbleiterbauelementes mit dem Golddraht tritt insbesondere bei Halbleiterbauelement-Temperaturen, die oberhalb von etwa 140°C liegen, eine beschleunigte Ausbildung von intermetallischen Phasen der Verbindungspartner Gold und Aluminium auf. Die Ursache für die Ausbildung der intermetallischen Phasen ist ein Diffusionsprozeß zwischen den Verbindungspartnern. Durch die unterschiedliche Diffusionsgeschwindigkeit von Gold und Aluminium bilden sich an der Verbindungsstelle sogenannte Kirkendall-Poren aus, die zu einem mechanischen und elektrischen Ausfall der Bondverbindung führen.at the direct connection of the aluminum bond pads of the semiconductor device with the gold wire occurs especially at semiconductor device temperatures, which are above about 140 ° C, an accelerated formation of intermetallic phases of the compound partners Gold and aluminum on. The cause of the formation of intermetallic Phases is a diffusion process between the connection partners. Due to the different diffusion speed of gold and aluminum are formed at the junction so-called Kirkendall pores resulting in a mechanical and electrical Failure of the bond lead.

Aus A.J.G. Strandjord et al., „Interconnecting to aluminum- and copper-based semiconductors (electroless-nickel/gold for solder bumping and wire bonding), Microelectronics Reliability 42 (2002), Seite 265 bis 283, ist bekannt, auf ein Aluminium-Bondpad Nickel und Gold durch stromlose Abscheidung aufzutragen. Die so beschichteten Bondpads wurden von Strandjord et al. mit Golddraht kontaktiert und nach dem Bonden und nach Temperaturauslagerung charakterisiert. Motivation hierfür war die Anwendung der Nickel-/Goldbeschichtung auf Halbleiterbauelementen mit Kupfer-Bondpads, um eine Kontaktierung dieser Bauelemente mit Golddraht zu ermöglichen. Auf die Anwendung und die Vor teile einer Nickel-/Goldbeschichtung im Bereich der Hochtemperatur-Elektronik wird in der Arbeit von Strandjord et al. nicht eingegangen.Out A.J.G. Strandjord et al., "Interconnecting to Aluminum- and copper-based semiconductors (electroless-nickel / gold for solder bumping and wire bonding), Microelectronics Reliability 42 (2002), pages 265 to 283, is known on an aluminum bond pad Apply nickel and gold by electroless deposition. The way coated bond pads were obtained from Strandjord et al. with gold wire contacted and characterized after bonding and after temperature aging. Motivation for this was the application of the nickel / gold coating on semiconductor devices with copper bond pads to make contact with these To allow components with gold wire. On the application and the advantages of a nickel / gold coating in the Area of high-temperature electronics is in the work of Strandjord et al. not received.

Darstellung der Erfindungpresentation the invention

Die erfindungsgemäße Lösung zur Herstellung einer hochtemperaturfesten Golddrahtverbindung mit einem Aluminium-Bondpad besteht darin, dass Aluminium-Bondpad mit einer Nickel- und einer Goldschicht zu überziehen. Die Nickel-Gold-Beschichtung wird dabei maskenfrei chemisch aufgebracht.The inventive solution for Production of a high temperature resistant gold wire connection with a Aluminum Bondpad consists of aluminum bondpad with a To coat nickel and a gold layer. The nickel-gold coating is applied chemically mask-free.

Hochtemperaturfest im Sinne der vorliegenden Erfindung bedeutet, dass die hochtemperaturfeste Golddrahtverbindung zur Kontaktierung eines Halbleiterbauelementes im Betrieb dauerhaft Temperaturen zwischen 140°C und 400°C, vorzugsweise 150°C bis 220°C widerstehen kann, ohne dass die Funktion beeinträchtigt ist.High temperature in the sense of the present invention means that the high temperature resistant Gold wire connection for contacting a semiconductor component permanently withstand temperatures between 140 ° C and 400 ° C, preferably 150 ° C to 220 ° C during operation can, without the function is impaired.

Die Herstellung der Bondpad-Beschichtung erfolgt am fertig prozessierten Wafer. Das bedeutet, dass der Wafer bereits mit Aluminium-Bondpads versehen ist und ausserhalb der Kontaktstellen eine Passivierungsschicht aufgetragen ist. Die Aluminium-Bondpads werden aus A1Si(x%)Cu(y%) gefertigt. Dem Aluminium können somit Anteile von Si bzw. Cu mit Werten für x und y zwischen 0 % und 2 % zugesetzt sein. Als Passivierungsschicht dient vorzugsweise eine Siliziumoxid-, Siliziumnitrit- bzw. Siliziumoxinitrit-Schicht und/oder ein Polymer. Durch die auf dem Wafer aufgebrachte Passivierungsschicht erfolgt bei der chemischen, stromlosen Abscheidung der Beschichtungsmetalle eine Beschichtung ausschließlich auf nicht passivierten Metallen (vorzugsweise Bondpads).The Bondpad coating is produced on the finished process Wafer. This means that the wafer is already using aluminum bondpads is provided and outside the contact points a passivation layer is applied. The aluminum bond pads are made of AlSi (x%) Cu (y%) manufactured. The aluminum can Thus, proportions of Si or Cu with values for x and y between 0% and Be added 2%. As a passivation layer is preferably used a silicon oxide, silicon nitrite or Siliziumoxinitrit layer and / or a polymer. Through the applied on the wafer passivation layer takes place in the chemical, electroless deposition of the coating metals a coating exclusively on non-passivated metals (preferably bond pads).

Zur Herstellung der für die hochtemperaturfeste Golddrahtverbindung notwendigen Bondpad-Beschichtung wird zunächst die Rückseite des mit Aluminium-Bondpads und der Passivierungsschicht versehenen Wafers abgedeckt. Die hierfür eingesetzte Abdeckung wird ausgewählt um eine elektrische Isolation zu erzielen und eine Beschichtung mit Metall zu verhindern. Aufgrund ihrer elektrisch nicht leitenden Eigenschaften eignen sich hierfür z.B. Lacke oder Folien.to Production of for the high-temperature resistant gold wire connection required bond pad coating will be first the backside of the aluminum bond pad and the passivation layer provided Wafers covered. The used for this Cover is selected to achieve electrical insulation and a coating to prevent with metal. Because of their electrically non-conductive Properties are suitable for this e.g. Paints or foils.

In einem zweiten Schritt werden auf den Aluminium-Bondpads ausgebildete Verunreinigungen und Oxid- bzw. Hydroxid-Belegungen durch ein Säuregemisch entfernt. Daran anschließend erfolgt eine Zinkatbeize, bei der Zink als Katalysatorschicht für die Nickel-Abscheidung selektiv auf dem Aluminium abgeschieden wird. Die so entstehende Zinkschicht hat eine Dicke von vorzugsweise 10 bis 100 nm, besonders bevorzugt eine Dicke von etwa 50 nm. In einem nächsten Schritt wird Nickel auf das mit Zink beschichtete Alu minium-Bondpad durch eine stromlose Abscheidung in einem Nickel-Bad aufgebracht. Die so entstehende Nickelschicht hat eine Dicke von vorzugsweise 0,5 bis 10 μm, insbesondere von 0,8 bis 5 μm. Die Nickelschicht kann Bor oder Phosphor als Hauptlegierungskomponenten enthalten. Als letzte Schicht wird durch eine Sudvergoldung und/oder Reduktivvergoldung in einem Goldbad Gold auf das Aluminium-Bondpad aufgetragen. Die durch die stromlose Abscheidung von Gold entstehende Goldschicht hat eine Dicke von vorzugsweise 10 bis 1000 nm, besonders bevorzugt von 30 bis 500 nm.In a second step is trained on the aluminum bond pads Impurities and oxide or hydroxide assignments due to an acid mixture away. After that a Zinkatbeize, in which zinc as a catalyst layer for the nickel deposition is selective is deposited on the aluminum. The resulting zinc layer has a thickness of preferably 10 to 100 nm, more preferably one Thickness of about 50 nm. In a next Step on nickel on the zinc-coated aluminum bond pad applied by electroless deposition in a nickel bath. The resulting nickel layer has a thickness of preferably 0.5 to 10 μm, in particular from 0.8 to 5 microns. The nickel layer may include boron or phosphorus as main alloying components contain. As a last layer is by a Sudvergoldung and / or Reductive gold plating in a gold gold bath on the aluminum bond pad applied. The resulting from the electroless deposition of gold Gold layer has a thickness of preferably 10 to 1000 nm, especially preferably from 30 to 500 nm.

Als letzter Schritt der Bondpad-Beschichtung wird die Abdeckung von der Rückseite des Wafers entfernt, ohne hierbei eine auf der Vorderseite möglicherweise vorhandene organische Passivierung zu zerstören.As the last step of the bondpad coating The cover is removed from the back of the wafer without destroying any organic passivation that may be present on the front.

Neben der Beschichtung von Aluminium-Bondpads eignet sich das beschriebene Verfahren auch für die Beschichtung von Kupfer-Bondpads zur hochtemperaturfesten Verbindung mit Golddrähten. Im Unterschied zur Beschichtung von Aluminium-Bondpads wird bei Kupfer-Bondpads jedoch anstelle von Zink Palladium als Katalysatorschicht verwendet. Die so erzeugte Palladiumschicht weist vorzugsweise eine Dicke von 10 bis 100 nm und besonders bevorzugt eine Dicke von etwa 50 nm auf.Next the coating of aluminum bond pads is the described Procedure also for the coating of copper bonding pads for high-temperature-resistant connection with gold wires. In contrast to the coating of aluminum bond pads is at Copper bond pads but instead of zinc palladium as a catalyst layer uses. The palladium layer thus produced preferably has one Thickness of 10 to 100 nm and more preferably a thickness of about 50 nm.

Nach dem Aufbringen der Beschichtungen auf den Wafer und der Entfernung der Rückseitenabdeckung wird der Wafer in einzelne Halbleiterbauelemente zersägt und auf Schaltungsträgern bestückt. Die Verbindung der elektronischen Bauteile mit dem Schaltungsträger erfolgt mit Golddraht. Hierzu wird der Golddraht nach entsprechender Formgebung (Umschmelzen des Drahtendes zu einer Gold-Kugel) durch ein stoffschlüssiges Fügeverfahren ohne Zugabe von Zusatzmaterial mit der Goldschicht der beschichteten Bondpads verbunden. Als stoffschlüssiges Fügeverfahren eignen sich z.B. Ultraschallschweißverfahren, besonders bevorzugt ein Thermosonic-Bondverfahren.To applying the coatings to the wafer and removal the back cover the wafer is sawn into individual semiconductor devices and on circuit boards stocked. The Connection of the electronic components takes place with the circuit carrier with gold wire. For this purpose, the gold wire after appropriate shaping (remelting the wire end to a gold ball) by a cohesive joining process without the addition of additional material with the gold layer of the coated Bondpads connected. Suitable cohesive joining methods are e.g. Ultrasonic welding, particularly preferred is a thermosonic bonding process.

Die Verbindungspartner Au/Au zeichnen sich durch eine sehr gute Bondbarkeit aus. Aufgrund der monometallisch ausgebildeten Bondverbindung unterliegt diese keinen Alterungserscheinungen. Die Ni-Schicht wirkt als Diffusionssperre zwischen dem Al-Bondpad und dem Au-Draht. Die Ausbildung intermetallischer Phasen von Al-/Au wird hierdurch unterbunden, so dass die Kirkendall-Porenbildung auch bei Temperaturen von integrierten Schaltkreisen oberhalb von 140°C, insbesondere in einem Temperaturbereich zwischen 140°C und 400°C nicht auftritt, so dass die Hochtemperaturfestigkeit der erfindungsgemäß vorgeschlagenen Golddrahtverbindungen auch bei Temperaturen von oberhalb 140°C sichergestellt ist.The Connection partners Au / Au are characterized by a very good bondability out. Due to the monometallic bond formed subject these are no signs of aging. The Ni layer acts as a diffusion barrier between the Al bondpad and the Au wire. The formation of intermetallic As a result, phases of Al / Au are prevented, so that Kirkendall pore formation even at temperatures of integrated circuits above 140 ° C, in particular in a temperature range between 140 ° C and 400 ° C does not occur, so the High-temperature strength of the inventively proposed gold wire connections also at temperatures above 140 ° C is ensured.

Vorteilhaft bei der Gold-Beschichtung der Bondpads zeigt sich, dass aufgrund der sehr guten Bondbarkeit ein breites Bond-Prozessfenster erreicht werden kann. Hieraus ergibt sich eine höhere Ausbeute beim Verbinden des Bondpads mit dem Golddraht. Im Unterschied zu dem goldbeschichteten Bondpad kann bei Aluminium-Bondpads die Bondbarkeit aufgrund von Oxid- bzw. Hydroxid-Belegungen auf den Bondpads reduziert sein. Aufgrund der im Vergleich zum Aluminium-Bondpad verbesserten Bondbarkeit des mit Gold beschichteten Bondpads kann beim Verschweißen des Bondpads mit dem Golddraht die Schweißdauer beim Ultraschall-Schweißen verringert werden. Hierdurch ist ein erhöhter Durchsatz möglich. Ein weiterer Vorteil der goldbeschichteten Bondpads liegt darin, dass das Verschweißen des Golddrahtes mit dem goldbeschichteten Bondpad mit der gleichen Ausrüstung erfolgen kann wie die Verbindung von Golddraht mit Aluminium-Bondpad. Diese Kompatibilität bietet die Möglichkeit, bei Hybridschaltungen und Multi-Chip-Modulen eine Mischbestückung ohne Zusatzaufwand zu realisieren. Die Ausgestaltung der Bondpads richtet sich nach den jeweiligen Einsatztemperaturen, welchen die mit den erfindungsgemäß vorgeschlagenen Golddrahtverbindungen gebondeten Halbleiterbauelemente ausgesetzt sind. So können z.B. auf einer Schaltung Halbleiterbauelemente mit Aluminium-Bondpads, sowie bei höheren auftretenden Temperaturen mit Nickel-Goldmetallisierten Aluminium-Bondpads als auch Halbleiterbauelemente mit Nickel-Goldmetallisierten Kupfer-Bondpads bestückt und mit dem vorhandenen Bondequipment mit dem Schaltungsträger verbunden werden.Advantageous when the gold coating of the bond pads shows that due the very good bondability a broad Bond process window can be achieved can. This results in a higher Yield when bonding the bond pad to the gold wire. In difference to the gold-coated bondpad aluminum bonding pads can Bondability due to oxide or hydroxide occupancies on the Bond pads are reduced. Due to the compared to the aluminum bondpad improved bondability of the gold-coated bondpad can during welding the bonding pad with the gold wire reduces the welding time during ultrasonic welding become. This is an elevated Throughput possible. Another advantage of gold-coated bond pads is that that welding the gold wire with the gold-coated bondpad with the same equipment can be done as the connection of gold wire with aluminum bondpad. This compatibility offers the possibility, in hybrid circuits and multi-chip modules mixed assembly without Additional effort to realize. The design of the bond pads directed depending on the respective operating temperatures, which with the proposed according to the invention Exposed to gold wire bonds bonded semiconductor devices are. So can e.g. on a circuit semiconductor devices with aluminum bond pads, as well as higher occurring temperatures with nickel-gold metallized aluminum bond pads and semiconductor devices equipped with nickel-gold metallized copper bond pads and connected to the existing Bondequipment with the circuit carrier become.

Analog zu den beschichteten Aluminium-Bondpads wird bei den Kupfer-Bondpads durch die Nickel-Diffusionssperrschicht die Ausbildung intermetallischer Phasen zwischen Kupfer und Gold und damit die Ausbildung von Kirkendall-Poren unterbunden.Analogous The coated aluminum bond pads are used in the copper bond pads through the nickel diffusion barrier layer the formation of intermetallic Phases between copper and gold and thus the formation of Kirkendall pores prevented.

Die durch das erfindungsgemäß vorgeschlagene Verfahren hergestellten Golddrahtverbindungen können Temperaturen von 140°C und mehr ausgesetzt sein, ohne dass deren Funktionsfähigkeit beeinträchtigt ist. Damit steht für insbesondere in der Automobilelektronik zukünftig zu erwartende Steuergerätgenerationen mit hoher Umgebungstemperatur und/oder hoher Verlustleistung eine hochtemperaturfeste elektrische Verbindungsmöglichkeit zur Verfügung, die aufgrund der maskenlosen Ausbildung der Bondpad-Beschichtung kostengünstig herstellbar ist.The proposed by the invention Processed gold wire joints can reach temperatures of 140 ° C and more be exposed without their functionality is impaired. This stands for especially in the automotive electronics future expected ECU generations with high ambient temperature and / or high power dissipation high-temperature-resistant electrical connection option available, the due to the maskless formation of the bond pad coating inexpensive to produce is.

Zeichnungdrawing

Im folgenden wird die Erfindung anhand einer Zeichnung näher beschrieben.in the Following, the invention will be described with reference to a drawing.

Es zeigt:It shows:

1 einen Ausschnitt aus einem Wafer mit Aluminium-Bondpad mit Oxidbelegung und abgedeckter Rückseite, 1 a section of a wafer with aluminum bond pad with oxide coating and covered back,

2 den Ausschnitt aus dem Wafer nach 1 mit Katalysatorschicht auf dem Aluminium-Bondpad, 2 the cutout from the wafer 1 with catalyst layer on the aluminum bondpad,

3 den Ausschnitt aus dem Wafer nach 1 und 2 mit Diffusionssperre und Goldschicht, 3 the cutout from the wafer 1 and 2 with diffusion barrier and gold layer,

4 den Ausschnitt aus dem Wafer nach 3 mit direkt kontaktiertem Golddraht, 4 the cutout from the wafer 3 with directly contacted gold wire,

5 den Ausschnitt aus dem Wafer nach 3 mit Gold-Bump und anschließender Kontaktierung des Golddrahtes. 5 the cutout from the wafer 3 with gold bump and subsequent contacting of the gold wire.

Ausführungsvariantenvariants

In 1 ist ein Ausschnitt aus einem Wafer mit Aluminium-Bondpad und Passivierungsschicht dargestellt.In 1 is a section of a wafer with aluminum bond pad and passivation layer shown.

Zur Kontaktierung eines Wafers 1, der in der Regel aus einem Silizium-Einkristall gefertigt wird, ist der Wafer 1 mit Aluminium-Bondpads 2 versehen. Ausserhalb der Bondpads 2 weist der Wafer 1 eine Passivierungsschicht 3 zum Schutz vor mechanischer Beschädigung und Umwelteinflüssen auf. Als Passivierungsschicht 3 eignen sich z.B. Siliziumoxid-, Siliziumnitrit- bzw. Siliziumoxinitrit-Schichten und/oder ein Polymer, z.B. Polyimid. Aufgrund der hohen Reaktivität von Aluminium bilden sich auf dem Aluminium-Bondpad 2 in Verbindung mit dem Sauerstoff der Umgebung eine Oxidbelegung 5 aus.For contacting a wafer 1 , which is usually made of a silicon single crystal, is the wafer 1 with aluminum bonding pads 2 Mistake. Outside the bondpads 2 points the wafer 1 a passivation layer 3 for protection against mechanical damage and environmental influences. As a passivation layer 3 For example, silicon oxide, silicon nitrite or silicon oxynitrite layers and / or a polymer, for example polyimide, are suitable. Due to the high reactivity of aluminum form on the aluminum bondpad 2 in conjunction with the oxygen of the environment an oxide occupancy 5 out.

Zur Herstellung der erfindungsgemäßen Goldbeschichtung des Aluminium-Bondpads für die hochtemperaturfeste Bondverbindung wird zunächst auf die Rückseite des Wafers 1 eine Rückseitenabdeckung 4 aufgebracht. Das zur Rückseitenabdeckung 4 verwendete Material muss chemisch stabil gegen Säuren und Laugen sein und dient der elektrischen Isola tion der Wafer-Rückseite. Eine Abscheidung von Metallen auf der Rückseite wird dadurch ebenfalls vermieden. Als Material für die Rückseitenabdeckung 4 eignen sich z.B. Folien oder Lacke.For the production of the gold coating according to the invention of the aluminum bond pad for the high-temperature-resistant bonding compound is first on the back of the wafer 1 a back cover 4 applied. That to the back cover 4 used material must be chemically stable to acids and alkalis and serves the electrical Isola tion of the wafer back. A deposition of metals on the back is also avoided. As material for the back cover 4 For example, films or paints are suitable.

Nach dem Aufbringen der Rückseitenabdeckung 4 wird in einem zweiten Schritt die Oxidbelegung 5 von dem Aluminium-Bondpad 2 entfernt. Für diesen, auch als Aktivierung bezeichneten Schritt, wird ein Gemisch aus anorganischen Säuren eingesetzt.After applying the back cover 4 In a second step, the oxide coverage 5 from the aluminum bondpad 2 away. For this, also referred to as activation step, a mixture of inorganic acids is used.

2 zeigt den Ausschnitt aus dem Wafer nach 1 mit einer auf das Aluminium-Bondpad aufgebrachten Katalysatorschicht. 2 shows the cutout from the wafer 1 with a catalyst layer applied to the aluminum bond pad.

Nach dem Entfernen der Oxidbelegung 5 vom Aluminium-Bondpad 2 wird der mit der Rückseitenabdeckung 4 versehene Wafer 1 einer Zinkatbeize unterzogen. Bei der Zinkatbeize wird Zink auf dem von Oxidbelegung 5 gereinigten Aluminium-Bondpad 2 abgeschieden. Die so erzeugte Zinkschicht dient als Katalysatorschicht 6 für die Nickel-Abscheidung und weist vorzugsweise eine Dicke von 10 bis 100 nm und besonders bevorzugt eine Dicke von etwa 50 nm auf.After removing the oxide coating 5 from the aluminum bond pad 2 Will that be with the back cover 4 provided wafers 1 subjected to a zinc pickling. In zincate pickling, zinc is on the oxide occupancy 5 cleaned aluminum bond pad 2 deposited. The zinc layer thus produced serves as a catalyst layer 6 for the nickel deposition and preferably has a thickness of 10 to 100 nm and more preferably a thickness of about 50 nm.

Wenn der Wafer 1 anstelle mit Aluminium-Bondpads 2 mit Kupfer-Bondpads versehen ist, wird anstelle der als Zinkschicht ausgebildeten Katalysatorschicht 6 eine Palladiumschicht auf das Bondpad aufgetragen. Zur Aufbringung der Palladiumschicht wird vorzugsweise ein Palladium-Komplex verwendet, der die Abscheidung von Nickel auf dem Kupfer-Bondpad katalysiert. Die Aufbringung der Palladiumschicht erfolgt dabei durch eine stromlose Abscheidung. Die so aufgebrachte Palladiumschicht weist vorzugsweise eine Dicke von 10 bis 100 nm auf und besonders bevorzugt eine Dicke von etwa 50 nm.If the wafer 1 instead of aluminum bond pads 2 is provided with copper bond pads, instead of the catalyst layer formed as a zinc layer 6 a palladium layer is applied to the bondpad. For the deposition of the palladium layer, a palladium complex is preferably used, which catalyzes the deposition of nickel on the copper bond pad. The deposition of the palladium layer is effected by an electroless deposition. The palladium layer thus applied preferably has a thickness of 10 to 100 nm, and more preferably a thickness of about 50 nm.

In 3 ist der Ausschnitt aus dem Wafer gemäß 1 und 2 mit einer auf das Aluminium-Bondpad aufgebrachten Diffusionssperre und Goldschicht dargestellt.In 3 is the section of the wafer according to 1 and 2 with a diffusion barrier and gold layer applied to the aluminum bondpad.

Nach der Abscheidung von Zink in der Zinkatbeize auf dem Aluminium-Bondpad 2 wird durch eine stromlose Abscheidung von Nickel eine Diffusionssperrschicht 7 auf die Katalysatorschicht 6 aufgetragen. Die Diffusionssperrschicht 7 kann Bor oder Phosphor als Hauptlegierungskomponenten enthalten. Die Diffusionssperrschicht 7 hat vorzugsweise eine Dicke von 0,5 bis 10 μm und besonders bevorzugt eine Dicke von 0,8 bis 5 μm. Nach der Abscheidung von Nickel kann optional eine stromlose Abscheidung von Palladium erfolgen.After the deposition of zinc in the zincate stain on the aluminum bondpad 2 becomes a diffusion barrier layer by an electroless deposition of nickel 7 on the catalyst layer 6 applied. The diffusion barrier layer 7 may contain boron or phosphorus as main alloying components. The diffusion barrier layer 7 preferably has a thickness of 0.5 to 10 microns and more preferably a thickness of 0.8 to 5 microns. After the deposition of nickel, an electroless deposition of palladium can optionally take place.

An die Abscheidung von Nickel und gegebenenfalls von Palladium auf das Aluminium-Bondpad 2 schließt sich eine stromlose Abscheidung von Gold zur Ausbildung einer Goldschicht 8 an. Dabei erfolgt die Goldbeschichtung vorzugsweise in Form von Sudgold und/oder Reduktivgold. Die durch die stromlose Abscheidung aufgebrachte Goldschicht 8 weist vorzugsweise eine Dicke von 10 bis 1000 nm und besonders bevorzugt eine Dicke von 30 bis 500 nm auf.At the deposition of nickel and optionally of palladium on the aluminum bond pad 2 an electroless deposition of gold completes the formation of a gold layer 8th at. The gold coating is preferably carried out in the form of buff and / or reductive gold. The gold layer applied by the electroless deposition 8th preferably has a thickness of 10 to 1000 nm and more preferably a thickness of 30 to 500 nm.

Nach dem Aufbringen der Goldschicht 8 auf das Aluminium-Bondpad 2 wird die Rückseitenabdeckung 4 des Wafers 1 entfernt. Nach der Beschichtung wird der Wafer 1 in die einzelnen Halbleiterbauelemente zersägt und auf entsprechende Schaltungsträger bestückt.After applying the gold layer 8th on the aluminum bondpad 2 becomes the back cover 4 of the wafer 1 away. After coating, the wafer becomes 1 sawn into the individual semiconductor components and fitted to corresponding circuit carriers.

In 4 ist der Ausschnitt aus dem Wafer gemäß 3 mit entfernter Rückseitenabdeckung und direkt kontaktiertem Golddraht dargestellt.In 4 is the section of the wafer according to 3 with removed back cover and directly contacted gold wire.

Die Verbindung der beschichteten Bondpads des Halbleiterbauelementes mit dem Schaltungsträger erfolgt mit Golddraht 9. Hierzu wird vorzugsweise mit einem Thermosonic-Verfahren das zu einer Kugel 10 umgeschmolzene Ende des Golddrahtes 9 mit der Goldschicht des Bondpads 2 verbunden. Bei dem Thermosonic-Verfahren handelt es sich dabei um ein Ultraschall-Schweißverfahren. Durch das Fügeverfahren wird die Kugel 10 am Ende des Golddrahtes entsprechend der Darstellung in 4 umgeformt.The connection of the coated bond pads of the semiconductor component to the circuit carrier takes place with gold wire 9 , For this purpose, preferably with a thermosonic method to a ball 10 remelted end of the gold wire 9 with the gold layer of the bondpad 2 connected. In which Thermosonic process is an ultrasonic welding process. The joining process makes the ball 10 at the end of the gold wire as shown in 4 reshaped.

Alternativ kann – wie in 5 dargestellt – auf das Bondpad 2 zuerst im Thermosonic-Verfahren eine Gold-Kugel ohne Anschlussdraht als Gold-Bump 11 aufgebracht werden. Die Gold-Kugel wird durch das Fügeverfahren zu einem Gold-Bump 11 abgeflacht. Anschließend wird ein Golddraht 9 im Ultraschall-Schweißverfahren auf dem Gold-Bump 11 kontaktiert.Alternatively - as in 5 shown - on the bondpad 2 first in the Thermosonic process a gold ball without connecting wire as a gold bump 11 be applied. The gold ball becomes a gold bump through the joining process 11 flattened. Subsequently, a gold wire 9 in the ultrasonic welding process on the gold bump 11 contacted.

Die so hergestellte Verbindung zwischen dem Golddraht 9 und der Goldschicht 8 des Aluminium-Bondpads 2 zeichnet sich dadurch aus, dass die Verbindung keinem Alterungsmechanismus unterliegt. Die Ausbildung intermetallischer Phasen von Aluminium und Gold wird durch die Diffusionssperrschicht 7 unterbunden und damit tritt auch das Ausfallbild der Kirkendall-Porenbildung bei Halbleiterbauelement-Temperaturen von oberhalb 140°C nicht auf.The connection thus made between the gold wire 9 and the gold layer 8th of the aluminum bondpad 2 is characterized by the fact that the compound is not subject to any aging mechanism. The formation of intermetallic phases of aluminum and gold is through the diffusion barrier layer 7 prevented and thus the failure pattern of Kirkendall pore formation at semiconductor device temperatures of above 140 ° C does not occur.

11
Waferwafer
22
Aluminium-Bondpad/Kupfer-BondpadAluminum bond pad / copper bond pad
33
Passivierungsschichtpassivation
44
RückseitenabdeckungBack cover
55
Oxidbelegungoxide coating
66
Katalysatorschichtcatalyst layer
77
DiffusionssperrschichtDiffusion barrier layer
88th
Goldschichtgold layer
99
Golddrahtgold wire
1010
durch das Fügeverfahren umgeformte Goldkugelby the joining process reshaped gold ball
1111
Gold-BumpGold bump

Claims (12)

Verfahren zur Herstellung einer hochtemperaturfesten Golddrahtverbindung für Halbleiterbauelemente, wobei auf Bondpads (2) eines Wafers (1) eine Katalysatorschicht (6) abgeschieden wird, auf der Katalysatorschicht (6) eine metallische Diffusionssperre (7) abgeschieden wird und abschließend eine Goldschicht (8) aufgetragen wird und wobei die Verbindung des Golddrahtes (9) mit der Goldschicht (8) durch ein stoffschlüssiges Fügeverfahren erfolgt.Method for producing a high-temperature-resistant gold wire connection for semiconductor components, wherein on bonding pads ( 2 ) of a wafer ( 1 ) a catalyst layer ( 6 ) is deposited on the catalyst layer ( 6 ) a metallic diffusion barrier ( 7 ) is deposited and finally a gold layer ( 8th ) and wherein the connection of the gold wire ( 9 ) with the gold layer ( 8th ) takes place by a cohesive joining process. Verfahren gemäß Anspruch 1, dadurch gekennzeichnet, dass das Fügeverfahren ein Ultraschall-Schweißverfahren ist.Method according to claim 1, characterized in that the joining method is an ultrasonic welding method is. Verfahren gemäß Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Bondpad (2) aus Aluminium, die Katalysatorschicht (6) aus Zink und die Diffusionssperre (7) aus Nickel gefertigt werden.Method according to claim 1 or 2, characterized in that the bonding pad ( 2 ) made of aluminum, the catalyst layer ( 6 ) of zinc and the diffusion barrier ( 7 ) are made of nickel. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Bondpad (2) aus Kupfer, die Katalysatorschicht (6) aus Palladium und die Diffusionssperre (7) aus Nickel gefertigt werden.Method according to claim 1 or 2, characterized in that the bonding pad ( 2 ) of copper, the catalyst layer ( 6 ) of palladium and the diffusion barrier ( 7 ) are made of nickel. Verfahren gemäß einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass zwischen der Diffusionssperrschicht (7) und der Goldschicht (8) zusätzlich eine Palladium-Schicht aufgetragen wird.Method according to one of claims 1 to 4, characterized in that between the diffusion barrier layer ( 7 ) and the gold layer ( 8th ) In addition, a palladium layer is applied. Verfahren gemäß einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die Beschichtung des Bondpads (2) maskenfrei erfolgt.Method according to one of claims 1 to 5, characterized in that the coating of the bonding pad ( 2 ) takes place without a mask. Verfahren gemäß einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die Katalysatorschicht (6), die metallische Diffusionssperrschicht (7) und die Goldschicht (8) stromlos durch chemische Abscheidung auf das Bondpad (2) aufgetragen werden.Method according to one of claims 1 to 6, characterized in that the catalyst layer ( 6 ), the metallic diffusion barrier layer ( 7 ) and the gold layer ( 8th ) de-energized by chemical deposition on the bonding pad ( 2 ) are applied. Verfahren gemäß Anspruch 5, dadurch gekennzeichnet, dass die Palladium-Schicht stromlos durch chemische Abscheidung auf die Diffusionssperrschicht (7) aufgetragen wird.Process according to Claim 5, characterized in that the palladium layer is electrolessly deposited by chemical deposition on the diffusion barrier layer ( 7 ) is applied. Verfahren gemäß einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass der Golddraht (9) nach entsprechender Formgebung direkt mit der Goldschicht (8) des Bondpads (2) verbunden wird.Method according to one of claims 1 to 8, characterized in that the gold wire ( 9 ) after appropriate shaping directly with the gold layer ( 8th ) of the bondpad ( 2 ) is connected. Verfahren gemäß einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass zuerst ein Gold-Bump (11) auf die Goldschicht (8) durch ein Fügeverfahren aufgebracht wird, und anschließend ein Kontaktierung des Golddrahtes (9) auf dem Gold-Bump (11) erfolgt.Method according to one of claims 1 to 8, characterized in that first a gold bump ( 11 ) on the gold layer ( 8th ) is applied by a joining process, and then contacting the gold wire ( 9 ) on the gold bump ( 11 ) he follows. Golddrahtverbindung für Halbleiterbauelemente, hergestellt nach einem oder mehreren der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass diese in einem Temperaturbereich zwischen 140°C bis 400°C eingesetzt wird.Gold wire connection for semiconductor devices, manufactured according to one or more of claims 1 to 10, characterized that these are used in a temperature range between 140 ° C to 400 ° C. becomes. Golddrahtverbindung gemäß Anspruch 11, dadurch gekennzeichnet, dass diese in einem Temperaturbereich zwischen 150°C bis 220°C eingesetzt wird.Gold wire connection according to claim 11, characterized in that that it is used in a temperature range between 150 ° C to 220 ° C.
DE10343180A 2003-09-18 2003-09-18 Method for producing a high-temperature-resistant gold wire connection Ceased DE10343180A1 (en)

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DE10343180A DE10343180A1 (en) 2003-09-18 2003-09-18 Method for producing a high-temperature-resistant gold wire connection
IT001759A ITMI20041759A1 (en) 2003-09-18 2004-09-15 PROCEDURE FOR THE MANUFACTURE OF A GOLDEN WIRE CONNECTION RESISTANT TO HIGH TEMPERATURES.
FR0452067A FR2860102B1 (en) 2003-09-18 2004-09-16 METHOD FOR MANUFACTURING A HIGH TEMPERATURE RESISTANT GOLD WIRE BOND FOR AN ELECTRONIC COMPONENT

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008144153A1 (en) * 2007-05-17 2008-11-27 Micron Technology, Inc. Integrated circuit packages, methods of forming integrated circuit packages, and methods of assembling integrated circuit packages
DE102004059389B4 (en) * 2004-12-09 2012-02-23 Infineon Technologies Ag Semiconductor device with compensation metallization

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6506672B1 (en) * 1999-06-30 2003-01-14 University Of Maryland, College Park Re-metallized aluminum bond pad, and method for making the same
US6445069B1 (en) * 2001-01-22 2002-09-03 Flip Chip Technologies, L.L.C. Electroless Ni/Pd/Au metallization structure for copper interconnect substrate and method therefor
US6616967B1 (en) * 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004059389B4 (en) * 2004-12-09 2012-02-23 Infineon Technologies Ag Semiconductor device with compensation metallization
WO2008144153A1 (en) * 2007-05-17 2008-11-27 Micron Technology, Inc. Integrated circuit packages, methods of forming integrated circuit packages, and methods of assembling integrated circuit packages
US7700406B2 (en) 2007-05-17 2010-04-20 Micron Technology, Inc. Methods of assembling integrated circuit packages
US7977157B2 (en) 2007-05-17 2011-07-12 Micron Technology, Inc. Methods of forming integrated circuit packages, and methods of assembling integrated circuit packages
US8531031B2 (en) 2007-05-17 2013-09-10 Micron Technology, Inc. Integrated circuit packages
US8709866B2 (en) 2007-05-17 2014-04-29 Micron Technology, Inc. Methods of forming integrated circuit packages

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