DE10249206B3 - Method of assembling a power device - Google Patents
Method of assembling a power device Download PDFInfo
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- DE10249206B3 DE10249206B3 DE2002149206 DE10249206A DE10249206B3 DE 10249206 B3 DE10249206 B3 DE 10249206B3 DE 2002149206 DE2002149206 DE 2002149206 DE 10249206 A DE10249206 A DE 10249206A DE 10249206 B3 DE10249206 B3 DE 10249206B3
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- power component
- carrier strip
- connection
- power
- circuit board
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Verfahren zum Zusammenbau eines Leistungsbauelements für die Leistungselektronik, das für die einfache und kostengünstige mechatronische Integration von Leistungsbauelementen und Applikation geeignet ist und bei dem eine gehäusefreie mechanische Lagerung auf einem Trägerstreifen, der zur mechanischen Verbindung mit einer Leiterplatte ausgebildet ist, und wenigstens zwei Anschlussstreifen, die jeweils mit einem elektrischen Kontakt des Leistungsbauelementes verbunden sind, zur elektrischen Verbindung mit der Leiterplatte vorgesehen sind.Method for assembling a power component for power electronics, which is suitable for the simple and inexpensive mechatronic integration of power components and application and in which a housing-free mechanical mounting on a carrier strip, which is designed for mechanical connection to a printed circuit board, and at least two connection strips, the are each connected to an electrical contact of the power component, are provided for electrical connection to the circuit board.
Description
Die Erfindung betrifft ein Verfahren zum Zusammenbau eines Leistungsbauelements gemäß dem Oberbegriff des Patentanspruchs 1.The invention relates to a method for assembling a power component according to the preamble of the claim 1.
Elektrische Antriebssysteme werden heute in vielfältiger Form verwendet. Kleinste Leistungen im Mikrowatt-Bereich (Armbanduhr) bis hin zu höchsten Leistungen im Megawatt-Bereich (Lokomotive, Walzwerk) sind nicht ungewöhnlich. Auch die Qualität der Antriebsaufgabe umfasst einen großen Bereich vom einfachen Spielzeugantrieb bis zur anspruchsvollen Lageregelung in der Werkzeugmaschine.Electric drive systems are today in diverse Shape used. Lowest performance in the microwatt range (wristwatch) up to the highest Outputs in the megawatt range (locomotive, rolling mill) are not unusual. The quality too The drive task covers a wide range of simple toy drives to the demanding position control in the machine tool.
Ein elektrisches Antriebssystem besteht mindestens aus einem Motor, der elektrische Energie etwa aus dem Stromnetz aufnimmt und in Rotationsenergie umwandelt und ggf. einem Getriebe. Bei größeren Antrieben oder wenn die Antriebsaufgabe anspruchsvoll ist, oder auch wenn nicht immer die maximale Antriebsleistung benötigt wird, werden heute meist geregelte oder drehzahlveränderliche Antriebe verwendet. Bei einem geregelten Antrieb wird der elektrische Motor über ein Leistungsstellglied betrieben, und eine Regelung sorgt dafür, dass gewünschte Prozessgrößen eingehalten werden. Ein elektronisches Leistungsstellglied ist meist als ein Gerät ausgeführt welches die erforderliche Leistungselektronik sowie die zugehörige Signalverarbeitung enthält. Solche Geräte werden z.B. als „Stromrichter", „Wechselrichter" oder „Umrichter" bezeichnet, womit das gesamte Gerät und nicht nur der Leistungsteil gemeint ist.An electric drive system exists at least from a motor, the electrical energy from the Power grid takes up and converted into rotational energy and possibly one Transmission. For larger drives or if the drive task is demanding, or even if The maximum drive power is not always required, are today mostly regulated or variable speed Drives used. With a regulated drive, the electrical Engine over a power actuator operated, and a control ensures that desired Process variables adhered to become. An electronic power actuator is usually considered a Device executed which the required power electronics and the associated signal processing contains. Such equipment e.g. referred to as "converter", "inverter" or "converter", with which the entire device and not just the power section is meant.
Die Leistungselektronik verwendet als Bauelemente Dioden, Thyristoren, Leistungstransistoren und insbesondere für hohe Schaltfrequenzen (bis zu 1MHz) und kleine Spannungen (bis etwa 400V) MOSFETs sowie für große Leistungen mit nicht allzu großen Schaltfrequenzen (3kHz...100kHz) IGBTs (Insulated Gate Bipolar Transistors). IGBTs stehen heute für hohe Spannungen (2kV) und Ströme zur Verfügung. In der Antriebstechnik hat der IGBT in den letzten Jahren eine große Verbreitung gefunden. Wechselrichter zum Betrieb von Asynchron- und Synchronmaschinen im Leistungsbereich von wenigen 100W bis in den MW-Bereich werden heute fast ausschließlich mit IGBTs realisiert.The power electronics used as components diodes, thyristors, power transistors and in particular for high Switching frequencies (up to 1MHz) and low voltages (up to about 400V) MOSFETs also for size Services with not too big Switching frequencies (3kHz ... 100kHz) IGBTs (Insulated Gate Bipolar Transistors). IGBTs stand for today high voltages (2kV) and currents to disposal. The IGBT has been widely used in drive technology in recent years found. Inverters for operating asynchronous and synchronous machines in the power range from a few 100W to the MW range today almost exclusively realized with IGBTs.
Die Leistungsbauelemente werden in Modulen angeordnet, die Einzelschalter oder auch integrierte Schaltungsanordnungen enthalten können. Die Aufbau- und Verbindungstechnik der Module muss die erforderliche elektrische Isolation sowie kompakte, vorzugsweise flach, Bauform und gute thermische Eigenschaften gewährleisten. Gleichzeitig bestehen Anforderungen nach geringen Kosten für Materialien und Prozesse bei gleichzeitig hoher Langzeitzuverlässigkeit und geringer Ausfallrate. Außerdem sollte in großes Leistungsspektrum mit möglichst wenigen Modulvarianten realisierbar sein.The power components are in Arranged modules, the individual switch or integrated circuit arrangements can contain. The The construction and connection technology of the modules must be the required electrical insulation as well as compact, preferably flat, design and ensure good thermal properties. Exist at the same time Requirements for low costs for materials and processes with high long-term reliability and a low failure rate. Moreover should be in big Range of services with as much as possible a few module variants.
Die eigentlichen Leistungsbauelemente werden durch die Hersteller in Gehäuse eingebracht, wobei die Anschlüsse der Chips mit den äußeren Anschlüssen der Gehäuse verbunden werden. Für die integrierten Schaltkreise bzw. Chips der Informationstechnologie sind die Abmessungen solcher Gehäuse und die Anordnungen der Kontakte standardisiert, so dass die Produkte verschiedener Hersteller problemlos austauschbar sind. In der Leistungselektronik gibt es bisher keine standardisierten Gehäusebauformen.The actual power components are inserted into the housing by the manufacturer, the connections of the chips with the external connections of the casing get connected. For the integrated circuits or chips of information technology are the dimensions of such housings and the arrangements of contacts standardized so that the products different manufacturers are easily interchangeable. In power electronics so far there are no standardized housing designs.
Die Funktionalität eines neu zu entwickelnden Moduls soll durch die optimale Verknüpfung der mechanischen und elektronischen Komponenten, also die mechatronische Integration, erreicht werden. Die an sich geeigneten Leistungsbauelemente verschiedener Hersteller unterscheiden sich jedoch in ihren Gehäuseformen. Daher müssen alle diese Bauelemente einzeln auf ihre Eignung für die mechatronische Integration in das Modul geprüft werden. So entsteht für jedes neu zu entwickelnde Modul großer Entwicklungsaufwand, ohne dass diesen Aufwendungen eine entsprechende Wertschöpfung gegenübersteht. Auch das schließlich ausgewählte Leistungsbauelement verfügt im Allgemeinen nicht über ein optimal für die mechatronische Integration mit der konkreten Applikation geeignetes Gehäuse.The functionality of a newly developed Through the optimal combination of mechanical and electronic components, i.e. mechatronic integration, can be achieved. The per se suitable power components of various However, manufacturers differ in their housing shapes. Therefore must all of these components individually on their suitability for mechatronic Integration into the module checked become. This is how for each new module to be developed requires great development effort without that these expenses are offset by a corresponding added value. Finally, that too selected Power component has generally don't have one optimal for the mechatronic integration with the specific application is suitable Casing.
Kommt es bei einem Hersteller zu Lieferschwierigkeiten, ist ein Ersatz durch Leistungsbauelemente anderer Hersteller erneut nur mit hohem Aufwand erforderlich.It is up to a manufacturer Delivery difficulties, is a replacement by power components other manufacturers again only with great effort.
Aus der
In der
Die der Erfindung zugrunde liegende Aufgabe besteht darin, ein Verfahren zum Zusammenbau von Leistungsbauelementen anzugeben, das für die einfache und kostengünstige mechatronische Integration von Leistungsbauelementen und Applikation geeignet ist.The basis of the invention Task is a process for assembling power components specify that for the simple and inexpensive mechatronic Integration of power components and application is suitable.
Diese Aufgabe wird durch das Verfahren mit den Merkmalen des Anspruchs 1 gelöst.This task is accomplished through the procedure solved with the features of claim 1.
Ein wesentlicher Gedanke der Erfindung besteht darin, die Gestaltung und Herstellung des eigentlichen Leistungsbauelementes und des Gehäuses zu trennen. Das Leistungsbauelement wird gehäusefrei mechanisch auf einem Trägerstreifen gelagert. Darüber hinaus hat das Leistungsbauelement eine elektrische Kontaktierung durch wenigstens zwei Anschlussstreifen.An essential idea of the invention consists in the design and manufacture of the actual power component and the housing to separate. The power component is mechanically free on a housing carrier strip stored. About that In addition, the power component has an electrical contact by at least two connecting strips.
Ein Leistungsbauelement, welches ohne herkömmliches Gehäuse und ohne Träger- bzw. Anschlussstreifen ausgeliefert wird, kann leicht in die Applikation eines Anwenders integriert werden. Die konkrete Ausführung des Trägerstreifens bzw. der Anschlussstreifen zur mechanischen bzw. elektrischen Verbindung zu einer Leiterplatte liegt bei dem Anwender. Damit kann dieser die mechatronische Integration optimal gestalten, überflüssige Teile werden eliminiert.A power component, which without conventional casing and without carrier or connecting strips is easily delivered into the application of a user can be integrated. The concrete execution of the carrier strip or the connection strip for mechanical or electrical connection to a circuit board lies with the user. So that can optimally design the mechatronic integration, redundant parts are eliminated.
Weiterhin kann vorgesehen sein, dass der Trägerstreifen und/oder die Anschlussstreifen zur Wärmeableitung von dem Leistungsbauelement ausgebildet sind. Dabei kann der Trägerstreifen zur Wärmeableitung an einen Kühlkörper vorgesehen sein.It can also be provided that the carrier strip and / or the connection strips for heat dissipation from the power component are trained. The carrier strip can be used for heat dissipation provided on a heat sink his.
Vorzugsweise ist vorgesehen, dass das Montieren des Leistungsbauelements auf dem Trägerstreifen mittels Kleben oder Löten erfolgt. Dabei kann das Leistungsbauelement leitfähig verklebt werden.It is preferably provided that mounting the power component on the carrier strip by means of gluing or soldering he follows. The power component can be glued in a conductive manner become.
Bei einer speziellen Ausführungsform kann vorgesehen sein, dass der Trägerstreifen zugleich einen der Anschlussstreifen bildet. Auf diese Weise dient der Trägerstreifen sowohl zur mechanischen Lagerung des Leistungsbauelementes als auch zur Kontaktierung eines Anschlusses.In a special embodiment can be provided that the carrier strip at the same time the connecting strip forms. The carrier strip serves in this way both for mechanical storage of the power component as well for contacting a connection.
Bei der bevorzugten Ausführungsform ist vorgesehen, dass das Leistungsbauelement einen IGBT aufweist und der Trägerstreifen mit einem Kollektor- oder einem Emitter-Kontakt desselben elektrisch und mechanisch verbunden ist und zwei Anschlussstreifen mit dem verbleibenden Kollektor- oder Emitter-Kontakt sowie mit dem Gate-Kontakt elektrisch verbunden sind. Üblicherweise weist der IGBT eine flach quaderförmige Grundform auf, wobei die beiden Hauptanschlüsse sich auf gegenüberliegenen Seiten befinden.In the preferred embodiment it is provided that the power component has an IGBT and the carrier strip with a collector or an emitter contact of the same electrically and is mechanically connected and two connection strips with the remaining collector or emitter contact and with the gate contact electrically are connected. Usually the IGBT has a flat cuboid basic shape, the two main connections facing each other Pages.
Vorteilhafterweise ist vorgesehen, dass die Hauptabmessungen des Trägerstreifens den Hauptabmessungen des Leistungsbauelements entsprechen oder diese übertreffen. Dies ermöglicht eine optimale Wärmeableitung.It is advantageously provided that that the main dimensions of the carrier strip correspond to or exceed the main dimensions of the power component. This enables one optimal heat dissipation.
Schließlich kann vorgesehen sein, dass der Trägerstreifen zur mechanischen Verbindung mit einer Leiterplatte ausgebildet ist. Damit sind keine weiteren mechanischen Befestigungsmittel erforderlich.Finally, it can be provided that the carrier strip is designed for mechanical connection to a circuit board. This means that no further mechanical fasteners are required.
Vorteile und Zweckmäßigkeiten der Erfindung ergeben sich im Übrigen aus den Unteransprüchen sowie der nachfolgenden Beschreibung eines bevorzugten Ausführungsbeispiels anhand der einzigen Figur. Diese zeigt in schematischer perspektivischer Darstellung ein erfindungsgemäß ausgeführtes Leistungsbauelement, das in ein Einzelschaltsystem integriert ist.Advantages and practicalities the invention moreover result from the subclaims and the following description of a preferred embodiment based on the single figure. This shows in a schematic perspective Representation of a power component designed according to the invention, which is integrated in a single switching system.
Das Einzelschaltelement
Die Anschlüsse des Leistungsbauelementes
Die beiden Hauptanschlüsse befinden
sich auf gegenüberliegenden
Seiten des IGBT. Der eine Hauptanschluss des IGBT wird über die
Fläche
des Leistungsbauelementes
Der zweite Hauptanschluss wird durch
einen der Anschlussstreifen
Der Trägerstreifen
Der Trägerstreifen
In einer weiteren, nicht gezeigten
Ausführungsform
sind der Trägerstreifen
Die Ausführung der Erfindung ist nicht auf dieses Beispiel beschränkt, sondern im Rahmen der anhängenden Ansprüche auch in einer Vielzahl von Abwandlungen möglich, die im Rahmen fachgemäßen Handelns liegen.The implementation of the invention is not limited to this example, but within the scope of the attached Expectations also possible in a variety of modifications, as part of professional action lie.
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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DE2002149206 DE10249206B3 (en) | 2002-10-22 | 2002-10-22 | Method of assembling a power device |
PCT/DE2003/003363 WO2004038797A1 (en) | 2002-10-22 | 2003-10-10 | Method for assembling a power component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2002149206 DE10249206B3 (en) | 2002-10-22 | 2002-10-22 | Method of assembling a power device |
Publications (1)
Publication Number | Publication Date |
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DE10249206B3 true DE10249206B3 (en) | 2004-07-01 |
Family
ID=32114821
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Application Number | Title | Priority Date | Filing Date |
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DE2002149206 Expired - Fee Related DE10249206B3 (en) | 2002-10-22 | 2002-10-22 | Method of assembling a power device |
Country Status (2)
Country | Link |
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DE (1) | DE10249206B3 (en) |
WO (1) | WO2004038797A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7541681B2 (en) | 2006-05-04 | 2009-06-02 | Infineon Technologies Ag | Interconnection structure, electronic component and method of manufacturing the same |
US7663212B2 (en) | 2006-03-21 | 2010-02-16 | Infineon Technologies Ag | Electronic component having exposed surfaces |
US8642394B2 (en) | 2008-01-28 | 2014-02-04 | Infineon Technologies Ag | Method of manufacturing electronic device on leadframe |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3711752A (en) * | 1969-12-05 | 1973-01-16 | Bosch Gmbh Robert | Semiconductor device and method of assembling the same |
DE2444418B2 (en) * | 1974-09-17 | 1977-03-24 | Siemens AG, 1000 Berlin und 8000 München | HOUSING FOR A SEMICONDUCTOR COMPONENT |
US6319755B1 (en) * | 1999-12-01 | 2001-11-20 | Amkor Technology, Inc. | Conductive strap attachment process that allows electrical connector between an integrated circuit die and leadframe |
GB2362991A (en) * | 2000-05-30 | 2001-12-05 | Gen Semiconductor Of Taiwan Lt | Power MOSFET package |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3995310A (en) * | 1974-12-23 | 1976-11-30 | General Electric Company | Semiconductor assembly including mounting plate with recessed periphery |
EP0978871A3 (en) * | 1998-08-05 | 2001-12-19 | Harris Corporation | A low power packaging design |
JP3895884B2 (en) * | 1999-03-25 | 2007-03-22 | 三洋電機株式会社 | Semiconductor device |
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2002
- 2002-10-22 DE DE2002149206 patent/DE10249206B3/en not_active Expired - Fee Related
-
2003
- 2003-10-10 WO PCT/DE2003/003363 patent/WO2004038797A1/en active Search and Examination
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3711752A (en) * | 1969-12-05 | 1973-01-16 | Bosch Gmbh Robert | Semiconductor device and method of assembling the same |
DE2444418B2 (en) * | 1974-09-17 | 1977-03-24 | Siemens AG, 1000 Berlin und 8000 München | HOUSING FOR A SEMICONDUCTOR COMPONENT |
US6319755B1 (en) * | 1999-12-01 | 2001-11-20 | Amkor Technology, Inc. | Conductive strap attachment process that allows electrical connector between an integrated circuit die and leadframe |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7663212B2 (en) | 2006-03-21 | 2010-02-16 | Infineon Technologies Ag | Electronic component having exposed surfaces |
US7541681B2 (en) | 2006-05-04 | 2009-06-02 | Infineon Technologies Ag | Interconnection structure, electronic component and method of manufacturing the same |
US8642394B2 (en) | 2008-01-28 | 2014-02-04 | Infineon Technologies Ag | Method of manufacturing electronic device on leadframe |
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WO2004038797A1 (en) | 2004-05-06 |
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