DE102022126127A1 - VCSEL ELEMENT, SENSOR DEVICE, ELECTRONIC DEVICE AND USER INTERFACE - Google Patents

Abstract

A VCSEL element (10) comprises a VCSEL device (100) attached to a substrate (110) which is transparent to electromagnetic radiation (16) emitted by the VCSEL device (100), and a lens (113) for deflecting electromagnetic radiation (16) emitted by the VCSEL device (100). The lens (113) is arranged on a side of the substrate (110) facing away from the VCSEL device (100), and a position of an aperture (106) of the VCSEL device (100) is horizontally shifted with respect to an optical axis (115) of the lens (113).

Description

Sensor devices, for example as components of electronic consumer electronics devices, measure a minimal deflection of the housing using optical means. The measuring principle used is, for example, SMI ("self-mixing interferometry"). In this case, electromagnetic radiation emitted by a VCSEL is radiated onto the housing, reflected by it and superimposed with the emitted radiation. By evaluating the superposition signal, information about a deflection of the housing can be determined.

In general, efforts are being made to provide improved sensor devices and improved VCSEL elements.

The present invention is based on the object of providing an improved VCSEL element, an improved sensor device, an improved electronic device and an improved user interface.

According to embodiments, the object is solved by the subject matter of the independent patent claims.

Advantageous further developments are defined in the dependent claims.

A VCSEL element comprises a VCSEL device attached to a substrate that is transparent to electromagnetic radiation emitted by the VCSEL device, and a lens for deflecting electromagnetic radiation emitted by the VCSEL device. The lens is arranged on a side of the substrate facing away from the VCSEL device. A position of an aperture of the VCSEL device is horizontally shifted relative to an optical axis of the lens. For example, the position of the aperture of the VCSEL device along the substrate surface is shifted relative to the optical axis of the lens.

According to embodiments, a sensor device comprises a first and a second VCSEL device attached to a common substrate that is transparent to electromagnetic radiation emitted by the VCSEL device, and a and a second lens. The first lens is configured to deflect electromagnetic radiation emitted by the first VCSEL device, and the second lens is configured to deflect electromagnetic radiation emitted by the second VCSEL device. The first and the second lens are arranged on a side of the substrate facing away from the VCSEL devices. A position of an aperture of the first VCSEL device is shifted relative to an optical axis of the first lens, and a position of the aperture of the second VCSEL device is shifted relative to the optical axis of the second lens. For example, the first and second VCSEL devices may be arranged such that the aperture of the first VCSEL device and the aperture of the second VCSEL device are arranged at a distance that is smaller than the distance of the optical axes of the first and second lenses.

The lenses described herein are suitable for deflecting radiation emitted by an associated VCSEL device. For example, the lenses may be suitable for focusing, substantially focusing, collimating, or substantially collimating electromagnetic radiation. Any other type of deflection or direction of the radiation is also included.

According to further embodiments, a connecting line between the aperture of the first VCSEL device and the aperture of the second VCSEL device may be different from a connecting line between the optical axis of the first lens and the optical axis of the second lens.

The sensor device may further comprise a voltage source, wherein the first and the second VCSEL device can be jointly controlled by the voltage source.

According to further embodiments, the first and second VCSEL devices can be controlled separately by the voltage source.

According to embodiments, a first interference signal obtainable by coherently superimposing first radiation emitted by the first VCSEL device with a first reflected signal resulting from reflection of the first radiation at an object, and a second interference signal obtainable by coherently superimposing radiation emitted by the second VCSEL device with a second reflected signal resulting from reflection of the second radiation at the object, can be determined by reading out a voltage signal at each of the first and second VCSEL devices.

The sensor device may further comprise a first detector for detecting a first interference signal generated by coherent superposition of first radiation emitted by the first VCSEL device with a first reflected signal. nal that is obtained when the first radiation is reflected from an object. In addition, the sensor device can contain a second detector for detecting a second interference signal that is obtainable by coherently superimposing radiation emitted by the second VCSEL device with a second reflected signal that is obtained when the second radiation is reflected from the object.

According to embodiments, an electronic device comprises the sensor device described above and a housing.

For example, the radiation emitted by the first and second VCSEL devices may each be reflected by the housing.

According to embodiments, the housing may be transparent to the electromagnetic radiation emitted by the first and second VCSEL devices. The electromagnetic radiation emitted by the first and second VCSEL devices may each be reflected by an object outside the housing.

For example, a user interface may comprise the electronic device described above. User input may be provided via a local deformation of the housing.

According to further embodiments, the electromagnetic radiation emitted by the first and the second VCSEL device can each be reflected by a finger. In this case, a user input can be made via a movement of the finger.

• 1A zeigt eine schematische Querschnittsansicht eines VCSEL-Elements gemäß Ausführungsformen.
• 1B zeigt eine schematische Querschnittsansicht einer VCSEL-Vorrichtung.
• 2A zeigt eine schematische Ansicht einer Sensorvorrichtung gemäß Ausführungsformen.
• 2B zeigt eine schematische Ansicht von Elementen einer Sensorvorrichtung gemäß weiteren Ausführungsformen.
• 2C zeigt eine schematische Draufsicht von Elementen einer Sensorvorrichtung gemäß weiteren Ausführungsformen.
• 2D veranschaulicht das Messprinzip der Sensorvorrichtung.
• 3 zeigt eine schematische Querschnittsansicht eines Teils einer elektronischen Vorrichtung.
• 4A und 4B zeigen Querschnittsansichten zur Veranschaulichung der Herstellung einer VCSEL-Vorrichtung gemäß Ausführungsformen.

The accompanying drawings are intended to provide an understanding of embodiments of the invention. The drawings illustrate embodiments and together with the description serve to explain the same. Further embodiments and many of the intended advantages will become apparent from the detailed description below. The elements and structures shown in the drawings are not necessarily drawn to scale with respect to one another. Like reference numerals refer to like or corresponding elements and structures.

• 1A shows a schematic cross-sectional view of a VCSEL element according to embodiments.
• 1B shows a schematic cross-sectional view of a VCSEL device.
• 2A shows a schematic view of a sensor device according to embodiments.
• 2 B shows a schematic view of elements of a sensor device according to further embodiments.
• 2C shows a schematic plan view of elements of a sensor device according to further embodiments.
• 2D illustrates the measuring principle of the sensor device.
• 3 shows a schematic cross-sectional view of a portion of an electronic device.
• 4A and 4B show cross-sectional views illustrating the fabrication of a VCSEL device according to embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part of the disclosure, and in which specific embodiments are shown for purposes of illustration. In this context, directional terminology such as "top", "bottom", "front", "back", "over", "on", "in front of", "behind", "fore", "backward", etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology is for purposes of explanation only and is not in any way limiting.

The description of the embodiments is not limiting, since other embodiments exist and structural or logical changes may be made without departing from the scope defined by the patent claims. In particular, elements of embodiments described below may be combined with elements of other embodiments described, unless the context indicates otherwise.

The terms "wafer" or "semiconductor substrate" used in the following description may include any semiconductor-based structure having a semiconductor surface. Wafer and structure are to be understood as including doped and undoped semiconductors, epitaxial semiconductor layers, optionally supported by a base support, and other semiconductor structures. For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, for example a GaAs substrate, a GaN substrate or a Si substrate or of an iso ing material, for example on a sapphire substrate.

Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material. Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include in particular nitride semiconductor compounds, through which, for example, ultraviolet, blue or longer-wave light can be generated, such as GaN, InGaN, AlN, AlGaN, AlGaInN, Al-GaInBN, phosphide semiconductor compounds, through which, for example, green or longer-wave light can be generated, such as GaAsP, AlGaInP, GaP, AlGaP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga ₂ O ₃ , diamond, hexagonal BN and combinations of the materials mentioned. The stoichiometric ratio of the compound semiconductor materials can vary. Other examples of semiconductor materials can include silicon, silicon-germanium and germanium. In the context of the present description, the term "semiconductor" also includes organic semiconductor materials.

The term “substrate” generally includes insulating, conductive or semiconductor substrates.

The terms "lateral" and "horizontal" as used in this description are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This can be, for example, the surface of a wafer or a chip (die).

The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when growing layers.

The term "vertical" as used in this description is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction can, for example, correspond to a growth direction when growing layers.

1A shows a schematic cross-sectional view of a VCSEL element 10 according to embodiments. The VCSEL element 10 comprises a VCSEL device 100 attached to a substrate 110 which is transparent to electromagnetic radiation emitted by the VCSEL device 100. The VCSEL element 10 further comprises a lens 113 for deflecting, for example focusing, electromagnetic radiation emitted by the VCSEL device 100. The lens 113 is arranged on a side of the substrate 110 facing away from the VCSEL device 100. For example, the VCSEL device 100 is arranged on a second main surface 112 of the substrate, and the lens 113 is arranged on a first main surface 111 of the substrate 110. A position of an aperture of the VCSEL device 100 is shifted relative to an optical axis 115 of the lens. For example, the distance between the optical axis 115 and the aperture 106 of the VCSEL device 100 may be d. For example, d may be greater than 2 µm or than 5 µm. Furthermore, d may be less than 20 µm or than 15 µm. A typical value may be, for example, approximately 10 µm.

1B shows an example of a VCSEL element 100, which is part of the 1A The VCSEL device 100 comprises a semiconductor layer stack having a first semiconductor layer 101 of a first conductivity type, for example p-type, and a second semiconductor layer 102 of a second conductivity type, for example n-type. An active region 103 is arranged between the first semiconductor layer 101 and the second semiconductor layer 102.

The active zone 103 can, for example, have a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multiple quantum well structure (MQW) for generating radiation. The term "quantum well structure" has no meaning with regard to the dimensionality of the quantization. It therefore includes, among other things, quantum wells, quantum wires and quantum dots as well as any combination of these layers.

A first resonator mirror 104 is arranged adjacent to or adjacent to the first semiconductor layer 101. A second resonator mirror 105 is arranged adjacent to or adjacent to the second semiconductor layer 102. For example, the first and second resonator mirrors 104, 105 can be designed as a dielectric mirror layer and each have a plurality of dielectric layers with different refractive indices.

In general, the term "dielectric mirror layer" covers any arrangement that reflects incident electromagnetic radiation to a high degree (for example >90%) and is non-conductive. For example, a dielectric mirror layer can be formed by a sequence of very thin dielectric layers, each with a different refractive indices. For example, the layers can alternately have a high refractive index (n>n ₀ ) and a low have a constant refractive index (n<n ₀ ) and be designed as a Bragg reflector. For example, the layer thickness can be λ/4, where λ indicates the wavelength of the light to be reflected in the respective medium. The layer seen from the incident light can have a greater layer thickness, for example 3λ/4. Due to the small layer thickness and the difference in the respective refractive indices, the dielectric mirror layer provides a high reflectivity and is non-conductive at the same time. A dielectric mirror layer can have, for example, 2 to 50 dielectric layers. A typical layer thickness of the individual layers can be about 30 to 90 nm, for example about 50 nm. The layer stack can further contain one or two or more layers that are thicker than about 180 nm, for example thicker than 200 nm.

According to further embodiments, the layers of the resonator mirrors 104 and 105 may also contain semiconductor layers.

When a voltage is applied between the first semiconductor layer and the second semiconductor layer 102, electrical radiation 16 is emitted. In this case, an optical resonator is formed in the vertical direction, i.e. perpendicular to the surface of the individual layers. An aperture 106 can be formed, for example, in a blocking layer 109, i.e. in a layer that is opaque to the electromagnetic radiation. The electromagnetic radiation is emitted through the aperture 106. For example, a diameter of the aperture 106 can be approximately greater than 2 µm. For example, the diameter of the aperture 106 can be smaller than 8 µm. For example, the diameter of the aperture 106 can be approximately 4 µm. Depending on the design, the blocking layer 109 can be arranged on the side of the first resonator mirror 104 facing or facing away from the first semiconductor layer 101. According to designs, the term “aperture” refers to an emission region of a VCSEL device.

For example, an electrical voltage can be applied by a voltage source 108. For example, terminals of the voltage source 108 can be connected to the first semiconductor layer 101 and the second semiconductor layer 102 via suitable contact areas. In addition, the VCSEL device 100 can have a detector 116, for example a photodiode, which can be monolithically integrated with the VCSEL device 100, for example. The detector 116 can, for example, detect an interference signal generated by so-called SMI, in which the emitted radiation is coherently superimposed with reflected radiation. According to further embodiments, a signal generated by SMI can be detected by the VCSEL device 100 itself, for example by determining the change in a voltage signal, for example by the voltage source 108 or a component of the voltage source.

The detected signal can be evaluated, for example, by an evaluation circuit 119. The evaluation circuit 119 can be connected to the voltage source 108. In particular, information about the level of the applied voltage can be passed on to the evaluation circuit.

Because, as in 1A shown, the position of the aperture 106 of the VCSEL device 100 is shifted relative to the optical axis 115 of the lens 113, emitted rays 16 are refracted towards the optical axis at the interface 114 between the lens 113 and the surrounding air. Accordingly, it is possible to deflect the emitted radiation 16.

With the VCSEL element 10 shown, it is possible, for example, to arrange a large number of VCSEL elements 10 spatially close together and at the same time to generate the generated beams 16 at an increased spatial distance.

2A shows a sensor device 15 according to embodiments. The 2A The sensor device 15 shown comprises a first VCSEL device 1001 and a second VCSEL device 1002. The first and second VCSEL devices 1001, 1002 are attached to a common substrate 110. The common substrate 110 is transparent to electromagnetic radiation 16 emitted by the VCSEL devices 1001, 1002.

The sensor device 15 further comprises a first lens 1131 and a second lens 1132. The first lens 1131 is designed to deflect, for example focus, electromagnetic radiation emitted by the first VCSEL device 101. The second lens 1132 is designed to deflect, for example focus, electromagnetic radiation emitted by the second VCSEL device 1002. The first and second lenses 1131, 1132 are arranged on a side of the substrate 110 facing away from the VCSEL devices 1001, 1002. A position of an aperture of the first VCSEL device 1001 is shifted by a distance d ₁ relative to the optical axis 115 of the first lens 1131. Furthermore, a position of the aperture of the second VCSEL device 1002 is shifted relative to the optical axis 115 of the second lens 1132 by a distance d ₂ . For example, the distances d ₁ and d ₂ may be equal to one another. According to further Depending on the guide shapes, the distances d ₁ and d ₂ can also be different from each other.

For example, the first VCSEL device 1001 and the second VCSEL device 1002 are arranged such that the aperture of the first VCSEL device 1001 and the aperture of the second VCSEL device 1002 are arranged at a distance that is smaller than the distance of the optical axes of the first and second lenses. For example, both the first VCSEL device 1001 and the second VCSEL device 1002 face each other, i.e. the first VCSEL device 1001 or the aperture of the first VCSEL device 1001 is arranged on the side of the optical axis 115 of the associated first lens 1131 that faces the second lens 1132. Furthermore, the second VCSEL device 1002 or the aperture of the second VCSEL device 1002 is arranged on the side of the optical axis 115 of the second lens 1132 which faces the first lens 1131.

In this way, it is possible to arrange individual VCSEL devices at a small distance, while the electromagnetic radiation 16 is emitted at a larger distance.

Similar to 1B shown, according to embodiments, the first VCSEL device 1001 also has a first detector 1161. Furthermore, the second VCSEL device 1002 can have a second detector 1162. The sensor device 15 can also have a voltage source 108 for operating the first VCSEL device 1001 and the second VCSEL device 1002. For example, the first VCSEL device 1001 can be operated independently of the second VCSEL device 1002 by means of the voltage source 108. According to further embodiments, however, both VCSEL devices can also be operated together. The evaluation circuit 119 can, for example, be connected to the voltage source 108 and can also be suitable for evaluating signals from the detectors 1161, 1162.

According to embodiments, a signal generated by SMI can also be detected by the VCSELL device 1001, 1002 and read out via a voltage signal. The evaluation circuit 119 can, for example, be connected to the voltage source 108 and can also be suitable for reading out the detected voltage signals.

In an optical sensor device that detects, for example, a local deformation of a housing or the movement of a finger and that is based on self-mixing interference, at least two measuring points are preferably used in order to increase the accuracy and reliability of the measurement. As in 2A As shown in Fig. 1, the first and second VCSEL devices 1001 and 1002 are arranged in the manner described, it is possible to arrange the individual VCSEL devices at a short distance and to provide a minimum distance of the corresponding measuring points, even if the reflective housing or the finger has a small distance, for example less than about 10 cm. Furthermore, the arrangement shown in 2A the first VCSEL device 1001 and the second VCSEL device 1002 are realized in a common VCSEL chip. In this way, a sensor device can be realized as a VCSEL chip that has a small size.

As continued in 2A As shown, depending on the curvature of the respective lenses 113, the distance d between the aperture 106 and the optical axis 115 of the lens can be selected such that the angle α between the emission direction of the emitted laser beam 16 and the optical axis 115 is greater than 20 °, for example greater than 30 °, for example approximately 35 °.

The distance between the apertures of the first VCSEL device 1001 and the second VCSEL device 1002 may, for example, be less than 50 µm. The beam 16 emitted by the second VCSEL device 1002 may, for example, be deflected in a direction deviating by -α from the optical axis 115 of the second lens 1132. The beam 16 emitted by the second VCSEL device 1001 may, for example, be counter-directional to the beam 16 emitted by the VCSEL device 1001.

In 2A VCSEL devices 1001 and 1002 are each shown as separate elements. According to further embodiments, they may also have common layers and be electrically separated from each other.

2 B shows another example of an arrangement of VCSEL devices 1001, 1002 in a sensor device 15 according to further embodiments. 2 B The sensor device 15 shown may, for example, have similar components as those shown in 2A shown sensor device 15. As in 2 B As shown, the VCSEL devices 1001, 1002 may also be arranged such that a distance between the apertures 106 is greater than the distance between the optical axes 115 of the associated lenses 1131, 1132.

2C shows a schematic plan view of elements of a sensor device 15 according to embodiments. As in 2C For example, as shown, a connecting line 118 between the aperture 106 of the first VCSEL device 1001 and the aperture 106 of the second VCSEL device 1002 may be different from a connecting line 117 between the optical axis 115 of the first lens 1131 and the optical axis 115 of the second lens 1132. For example, the two connecting lines may intersect each other or be shifted parallel to each other. According to further embodiments, the distance between the apertures 106 of the first and second VCSEL devices 1001, 1002 may be different from or equal to the distance between the optical axes 115 of the first and second lenses 1131, 1132.

2D illustrates a measurement setup using the 2A shown VCSEL arrangement. A beam 16 is emitted by a VCSEL 100. This is reflected by an object 20, so that the reflected beam 17 is generated. The detector 116 is suitable for detecting a superposition signal from the emitted radiation 16 and the reflected radiation 17. The 2D The VCSEL device 100 shown has similar components to the one in 1B shown VCSEL device, so a detailed description is omitted.

3 shows a part of an electronic device 30 or the user interface 35. For example, the sensor device 15 described with reference to 2A described, mounted on a suitable carrier 123. The VCSEL devices 1001, 1002 can be arranged between the carrier 123 and the substrate 110. The VCSEL devices 1001, 1002 can, as in 3 indicated, can be formed as separate elements or have common layers.

A housing 120 is arranged above the sensor device 15. For example, the sensor device 15 can be arranged in an electronic device 30, and the housing 120 simultaneously forms the housing of the electronic device 120. As in 3 As is also shown, a finger 121 moves in the direction of the arrow and thereby exerts pressure in the direction of the sensor device 15. As a result, the distance between the housing 120 and the sensor device 15 is reduced. The position of the first measuring point 122 is defined by the position of the intersection point of the radiation 16 emitted by the first VCSEL device 1001 with the housing 120. Furthermore, the position of the second measuring point 124 is defined by the position of the intersection point of the radiation 16 emitted by the second VCSEL device 1002 with the housing 120.

Typically, the first measuring point 122 and the second measuring point 124 can have a distance of at least 1 mm, for example 2 mm. As described above with reference to 2A As described above, the apertures of the first VCSEL device 1001 and the second VCSEL device 1002 are shifted relative to the optical axis of the lens 113, this minimum distance can be maintained even if the first and second VCSEL devices 1001, 1002 are arranged on a common chip and are thus designed to be particularly space-saving.

For example, the movement of the finger, i.e. distance and speed of the finger, can be determined by modulating the output power of the VCSELs or the forward voltage of the VCSELs and evaluating the signals detected by the detectors 1161, 1162. These concepts are known and have been described in detail under the term "FMCW-LIDAR", frequency modulated continuous wave LIDAR.

According to embodiments, as described above, the VCSEL devices 1001, 1002 themselves may detect a generated SMI signal by changing a voltage signal. In this case, no separate detectors 1161, 1162 are required.

In the 3 The arrangement shown can be part of an electronic device, for example a portable terminal, a smartphone, a camera or, for example, headphones.

According to further embodiments, the 3 The arrangement shown also provides a user interface 35. For example, in the case of wireless headphones or earbuds, commands can be entered by pressing on the housing. In this case, user input can be made by moving the finger, for example to adjust the volume or to effect another control.

According to embodiments, the housing 120 may be opaque. In this case, the deflection of the housing 120 is measured and results in the generation of the desired signals.

According to further embodiments, the housing 120 can also be transparent. In this case, for example, the emitted electromagnetic radiation 16 can be reflected on the finger 121. and thus lead to the generation of the desired signals. The first measuring point 122 can correspond to the intersection point of the radiation 16 emitted by the first VCSEL device 1001 with the finger. The second measuring point 124 can correspond to the intersection point of the radiation 16 emitted by the second VCSEL device 1002 with the finger.

The 4A to 4C illustrate an example of a method for manufacturing the sensor device or an arrangement of VCSEL elements according to embodiments.

First, as in 4A As indicated, layers for forming the respective VCSEL devices 1001, 1002 at wafer level are formed on a substrate 110 which acts as a growth substrate and is transparent to the electromagnetic radiation to be emitted by the VCSEL device 100. The associated methods are generally known, so a detailed description is omitted.

The substrate 110 is thinned and then etched to form the lenses 113. Furthermore, the semiconductor layer stacks belonging to the individual VCSEL devices 1001, 1002 are each separated from one another and electrically insulated, for example by etching a mesa. This is shown in 4C The etching of the lenses 113 is carried out such that the optical axis 115 of the individual lenses is shifted relative to the aperture 106 of the individual laser devices 100, as described above.

Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that a variety of alternative and/or equivalent designs may be substituted for the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is limited only by the claims and their equivalents.

LIST OF REFERENCE SYMBOLS

10

VCSEL element

15

Sensor device

16

emitted radiation

17

reflected radiation

20

object

30

electronic device

35

User interface

100

VCSEL device

1001

first VCSEL device

1002

second VCSEL device

101

first semiconductor layer

102

second semiconductor layer

103

active zone

104

first resonator mirror

105

second resonator mirror

106

Aperture

108

Voltage source

109

blocking layer

110

Substrat

111

first main interface

112

second main interface

113

lens

1131

first lens

1132

second lens

114

Surface of the lens

115

optical axis

116

detector

1161

first detector

1162

second detector

117

Connecting line between optical axes

118

Connecting line between apertures

119

Evaluation circuit

120

Housing

121

finger

122

first measuring point

123

carrier

124

second measuring point

Claims (14)

VCSEL element (10), comprising: a VCSEL device (100) mounted on a substrate (110) which is transparent to electromagnetic radiation (16) emitted by the VCSEL device (100); and a lens (113) for deflecting electromagnetic radiation (16) emitted by the VCSEL device (100), the lens (113) being mounted on a side of the substrate facing away from the VCSEL device (100) (110) is arranged, and a position of an aperture (106) of the VCSEL device (100) is horizontally shifted with respect to an optical axis (115) of the lens (113). Sensor device (15) comprising: a first and a second VCSEL device (1001, 1002) mounted on a common substrate (110) which is transparent to electromagnetic radiation (16) emitted by the VCSEL device (1001, 1002); and one and a second lens (1131, 1132), wherein the first lens (1131) is configured to deflect electromagnetic radiation (16) emitted by the first VCSEL device (1001) and the second lens (1132) is configured to deflect electromagnetic radiation (16) emitted by the second VCSEL device (1002), wherein the first and second lenses (1131, 1132) are arranged on a side of the substrate (110) facing away from the VCSEL devices (1001, 1002), a position of an aperture (106) of the first VCSEL device (1001) is shifted relative to an optical axis (115) of the first lens (1131) and a position of the aperture (106) of the second VCSEL device (1002) relative to the optical axis (115) of the second lens (113) is shifted. Sensor device (15) according to Claim 2 , wherein the first and second VCSEL devices (1001, 1002) are arranged such that a distance between the aperture (106) of the first VCSEL device (1001) and the aperture (106) of the second VCSEL device (1002) is different from a distance of the optical axes (115) of the first and second lenses (1131, 1132). Sensor device (15) according to Claim 2 or 3 , wherein a connecting line (118) between the aperture (106) of the first VCSEL device (1001) and the aperture (106) of the second VCSEL device (1002) is different from a connecting line (117) between the optical axis (115) of the first lens (1131) and the optical axis (115) of the second lens (1132). Sensor device according to Claim 3 or 4 , wherein the distance between the aperture (106) of the first VCSEL device (1001) and the aperture (106) of the second VCSEL device (1002) is smaller than the distance between the optical axes (115) of the first and second lenses (1131, 1132). Sensor device (15) according to one of the Claims 2 until 5 , further comprising a first detector (1161) for detecting a first interference signal which is obtainable by coherent superposition of first radiation (16) emitted by the first VCSEL device (1001) with a first reflected signal (17) which results when the first radiation (16) is reflected by an object (20), and a second detector (1162) for detecting a second interference signal which is obtainable by coherent superposition of radiation emitted by the second VCSEL device (1002) with a second reflected signal (17) which results when the second radiation (16) is reflected by the object (20). Sensor device (15) according to one of the Claims 2 until 6 , further comprising a voltage source (108), wherein the first and second VCSEL devices (1001, 1002) can be controlled jointly by the voltage source (108). Sensor device (15) according to one of the Claims 2 until 6 , further comprising a voltage source (108), wherein the first and the second VCSEL device (1001, 1002) can be controlled separately from one another by the voltage source (108). Sensor device (15) according to Claim 7 or 8th , wherein a first interference signal, which is obtainable by coherent superposition of first radiation (16) emitted by the first VCSEL device (1001) with a first reflected signal (17) which results when the first radiation (16) is reflected by an object (20), and a second interference signal, which is obtainable by coherent superposition of radiation emitted by the second VCSEL device (1002) with a second reflected signal (17) which results when the second radiation (16) is reflected by the object (20), can be determined by reading out a voltage signal at each of the first and second VCSEL devices (1001, 1002). Electronic device (30) which comprises the sensor device (15) according to one of the Claims 2 until 9 and a housing (120). Electronic device (30) according to Claim 10 , wherein the radiation (16) emitted by the first and second VCSEL devices (1001, 1002) is each reflected by the housing (120). Electronic device (30) according to Claim 10 , wherein the housing (120) is transparent to the electromagnetic radiation (16) emitted by the first and second VCSEL devices (1001, 1002), and the electromagnetic radiation (16) emitted by the first and second VCSEL devices (1001, 1002) is reflected by the object (30) outside the housing (120). User interface (35) which controls the electronic device (30) according to Claim 11 having, wherein a user input is made via a local deformation of the housing (120). User interface (35) which controls the electronic device (30) according to Claim 12 wherein the electromagnetic radiation (16) emitted by the first and second VCSEL devices (1001, 1002) is reflected by a finger in each case, and a user input is made via a movement of the finger.

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