DE102021113604A1 - RADIATION EMITTING DEVICE, MEASUREMENT SYSTEM AND VEHICLE WITH MEASUREMENT SYSTEM - Google Patents

Abstract

A radiation-emitting device (100) is specified, which is arranged on a mounting plane (6) extending in lateral directions (x, y) and is intended to emit light along an emission direction (z), the emission direction (z) includes a direction perpendicular to the mounting plane (6). The radiation-emitting device (100) has at least one laser light source (1), and a non-imaging optical system (2) arranged downstream of the at least one laser light source (1) and comprising at least one optical element (21, 22, 23) for forming a beam profile of the Radiation-emitting device (100) along the lateral directions (x, y). Furthermore, a measuring system (1000) with the radiation-emitting device (100) and a vehicle (2000) with the measuring system are specified.

Description

A radiation-emitting device is specified. In particular, the radiation-emitting device can be used for a measuring system, particularly preferably for carrying out a method known under the term LIDAR (“light detection and ranging”, light detection and distance measurement), which includes one or more optical measuring methods, for example optical distance and speed measurements , can be used. Furthermore, the measurement system can be used in a device such as a vehicle.

Especially with regard to LIDAR systems in the automotive sector, many applications require a high detectable range in a preferred direction, while a reduced detectable range in one or more other directions is often sufficient. For example, a high detectable range for the central forward direction and a reduced detectable range in the periphery or vice versa may be desired. In order to increase the range in a specific direction, the light output radiated in this direction can in principle be increased. If the system is implemented using a flash system type, the entire scene is simultaneously illuminated by a light pulse and the reflected light is detected by a time-resolved camera system. The same applies to CW-type (CW: "continuous wave") LIDAR systems, in which a continuously modulated light beam is emitted instead of light pulses and, for example, the phase shift of the returning light is detected.

In automotive applications, for example, a matrix, also referred to as an array, of emitters is used for lighting. The emitted light is projected in the direction of the potential target, for example with imaging or projection optics, which transmits the intensity distribution of the light source onto the road, for example. Since the light source can be a matrix of evenly distributed emitters, there is a homogeneous distribution of intensity across all angles. As a result, the intensity in the center is often not sufficient for the desired measurement range, while the light intensity provided in the periphery is too high. In the transversal direction in particular, this leads to a waste of energy, since the downward light beam hits the road surface after just a few meters, which limits the required range, since only objects that are closer than the road surface are to be detected. Limited range is also required in angular directions pointing upwards, since objects higher than about five meters above the road are of no interest for driving. At shorter distances, however, the detection of objects at such angles is imperative. Therefore, LIDAR systems have to cover a large field of view, which leads to a lot of unnecessary light emission at such large angles when the systems are designed for homogeneous radiation.

One way to get around this problem is to use arrays of individually addressable emitters, or at least groups of emitters that can be addressed separately. In such systems, a greater number of pulses can be radiated in the most relevant directions, resulting in greater range due to noise reduction by averaging over multiple pulses. The transmitter emitters, which only contribute to that angular range in which a reduced range is sufficient, are pulsed at a reduced frequency, which reduces the transmission power and thus the maximum detectable range. However, this method requires individually addressable arrays, which are more expensive to manufacture than arrays with all emitters connected fully in parallel.

At least one object of certain embodiments is to provide an improved radiation-emitting device. Further objects of specific embodiments are to specify a measurement system with the radiation-emitting device and a vehicle with the measurement system.

These objects are achieved in particular by subject matter according to the independent patent claims. Advantageous embodiments and developments of the objects are characterized in the dependent claims and also emerge from the following description and the drawings.

In the present case, directional information such as "horizontal", "transversal" and "vertical" is used. These terms preferably relate to such an arrangement in which the measuring system and in particular the radiation-emitting device in the measuring system are aligned relative to the environment for the intended use. If the measuring system is used, for example, in a vehicle such as a road vehicle, the horizontal direction designates a direction parallel or at least essentially parallel to the road surface. The transverse direction, which is perpendicular to the horizontal direction, then corresponds to a direction perpendicular or at least essentially perpendicular to the roadway surface. The direction of emission is preferred perpendicular or substantially perpendicular to the transverse direction and the horizontal direction.

Terms such as "perpendicular" or "parallel" can denote an exact perpendicular or parallel arrangement here and in the following. Furthermore, vertical or parallel arrangements can each also be at a small angle, which can be due to an assembly tolerance or external circumstances, for example, and which can be less than or equal to 10° or less than or equal to 5° or less than or equal to 3° or less than or equal to 1° may deviate from the exact arrangement in each case.

Here and in the following, “radiation” or “light” can refer in particular to electromagnetic radiation with one or more wavelengths or wavelength ranges from an ultraviolet to infrared spectral range. In particular, the light or radiation described here and below can be infrared light or visible light and have or have wavelengths or wavelength ranges from an infrared spectral range between about 800 nm and about 3 μm or from a visible spectral range between about 350 nm and about 800 nm.

In accordance with at least one embodiment of the radiation-emitting device, the radiation-emitting device is arranged on a mounting plane extending in lateral directions. The radiation-emitting device is intended to emit electromagnetic radiation along an emission direction, the emission direction including a direction perpendicular to the mounting plane. The radiation-emitting device has at least one laser light source and a non-imaging optical system arranged downstream of the at least one laser light source. The optical system comprises at least one optical element. The optics system is provided for shaping a beam profile of the radiation-emitting device along the lateral directions.

The mounting plane has a main plane of extent, with the lateral directions running parallel to the main plane of extent. The lateral directions can in particular include the horizontal direction and the transverse direction. For example, the mounting level can be formed by a printed circuit board or circuit board (PCB). Further electronic components can be arranged on the assembly level. In particular, in addition to the radiation-emitting device, a radiation-detecting device, i.e. a detector unit, can also be arranged on the mounting plane.

The direction of emission includes a direction perpendicular to the mounting plane. This can mean that the direction of emission comprises a multiplicity of directions, with the directions having at least one component which is perpendicular to the mounting plane. In other words, the light emission can be referred to as being directed upwards from the mounting plane, away from the mounting plane.

In particular, a detector unit has an upwardly directed field of view. Advantageously, the radiation-emitting device emits the electromagnetic radiation perpendicular to the mounting plane and thus has the same or a similar field of view as the detector unit. The radiation-emitting device and the detector unit can thus be arranged on the same assembly plane, or on assembly planes aligned parallel to one another. It is not necessary to rotate the mounting level by 90°.

The laser light source can be arranged on the assembly level or on a carrier substrate fastened on the assembly level. In this way, the mounting level and/or the carrier substrate can advantageously be used as a heat sink. This results in a low thermal resistance, which in turn allows high electrical currents. The laser light source can thus be operated with high electrical power. In addition, this arrangement allows a stack arrangement of laser diode chips.

In one embodiment, the laser light source has at least one laser emitter unit. The laser light source particularly preferably has a plurality of laser emitter units. In particular, the laser light source has at least one semiconductor laser diode. The semiconductor laser diode, which can be embodied in particular as a laser diode chip, is provided and set up to emit light during operation, which is laser light at least when certain threshold conditions are exceeded. For the sake of simplicity, it is therefore assumed below that the radiation-emitting device emits laser light during operation.

The at least one semiconductor laser diode can have at least one active layer which is designed and provided to generate light in an active region during operation. The active layer can in particular be part of a semiconductor layer sequence with a plurality of semiconductor layers and have a main extension plane which is perpendicular to an arrangement direction of the layers of the semiconductor layer sequence. For example, the active layer can have exactly one active region. Furthermore, the semiconductor laser diode can also have a plurality of active Have layers that are stacked on top of one another within the semiconductor layer sequence and can be connected to one another in series, for example via tunnel junctions. The semiconductor layers can be highly doped at least in places in order to ensure good electrical conductivity. In this way it is possible to operate the semiconductor laser diode with high electrical power. Furthermore, semiconductor laser diodes with short electrical supply lines can be used, as a result of which low inductances can be achieved.

The light generated by the laser light source is particularly preferably long-wave light in the infrared spectral range and has a wavelength of greater than or equal to 800 nm or greater than or equal to 850 nm. Furthermore, the light can have a wavelength of less than or equal to 2 μm, or less than or equal to 1.5 μm, or less than or equal to 1 μm. A preferred wavelength of the light generated by the laser light source can be around 940 nm. For example, a semiconductor layer sequence or at least one active layer based on In _x Ga _y Al _1-xy As or based on In _x Ga _y Al _1-xy P is suitable for long-wave infrared radiation, with 0≦x≦1 in each case, 0 ≤ y ≤ 1 and x + y ≤ 1 holds.

The laser light source can, but does not necessarily have to, emit light in the emission direction. Rather, the optics system arranged downstream of the laser light source can be used to deflect the light emitted by the laser light source to the direction of emission and to shape the beam profile.

If the optics system comprises more than one optics element, the optics elements can preferably have mutually independent optical effects in relation to the light emitted by the laser light source, with the totality of these effects yielding the desired emission characteristics of the radiation-emitting device. In particular, the emission characteristics of the radiation-emitting device differ from the emission characteristics of the laser light source.

The optics system shapes the beam profile of the radiation-emitting device along the lateral directions. In particular, this means that the beam profile is formed by the optical system along the horizontal and transverse directions. Advantageously, the optics system is integrated in the radiation-emitting device, which allows the system to be compact and makes alignment with external optical components unnecessary.

In accordance with at least one further embodiment, the laser light source is designed as a laser bar or laser matrix. As mentioned above, the laser light source may have a plurality of laser emitter units. This can mean, for example, that the laser light source has a plurality of semiconductor laser diodes. Furthermore, a semiconductor laser diode can also have a plurality of active regions and/or active layers, which can form a plurality of laser emitter units.

If edge-emitting laser diodes are used, the laser light source can be embodied as a laser bar with at least one active layer with a plurality of active regions arranged next to one another and/or as a stacked semiconductor laser diode with a plurality of active layers arranged one on top of the other. In this case, the laser light source can thus have a one-dimensional array of laser emitter units. If each active layer of a plurality of active layers has a plurality of active regions arranged side by side, i.e. if the semiconductor laser diode is designed as a laser bar with stacked active layers, the laser light source can have a two-dimensional array, i.e. matrix, of laser emitter units.

If vertically emitting laser diodes are used, the laser light source with a plurality of laser emitter units can have a plurality of active regions, particularly preferably arranged in a matrix-like manner, in the semiconductor layer sequence. In this case the laser light source can thus comprise a two-dimensional array, i.e. matrix, of laser emitter units.

Depending on the design of the laser light source, the laser emitter units within the laser bar or the laser matrix can be controlled individually, in groups or all together. The laser emitter units are particularly preferably all driven together and therefore in parallel during operation. The use of a laser bar or a laser matrix can enable uniform illumination of the surroundings. Furthermore, the light emanating from different laser emitter units can be directed in different directions. In this way, areas where high light intensity or range is required and areas where low light intensity is sufficient, e.g. in the periphery, can be treated differently.

According to at least one further embodiment, the laser light source includes an edge emitting laser diode. In at least one embodiment, the edge-emitting laser diode is arranged on a carrier substrate that is plane-parallel to the mounting plane. In other embodiments, the edge emitting laser diode is on a to Mounting level arranged tilted carrier substrate.

In the case of an edge-emitting laser diode, the light generated in the at least one active layer during operation is emitted via a side face designed as a facet, which can be designed perpendicularly to the at least one active layer. Edge-emitting laser diodes have a far field that is typical for these laser light sources and a characteristic opening angle of the beam profile. In particular, it can be advantageous to use an edge-emitting laser diode to achieve an elliptically shaped beam profile in the far field, with a narrow "slow axis" typical of edge-emitting laser diodes.

The laser light source, in this case the edge-emitting laser diode, is spaced apart from the mounting plane by the carrier substrate. The mounting plane thus does not represent an optical obstacle for the emitted light of the laser light source. In the case of a carrier substrate that is plane-parallel to the mounting plane, the carrier substrate has a front and rear side whose surfaces run essentially parallel to the mounting plane. The rear side of the carrier substrate faces the assembly level, while the front side of the carrier substrate, on which the laser diode chip is attached, faces away from the assembly level. The edge-emitting laser diode can be arranged on the carrier substrate in such a way that the at least one active layer of the laser diode is aligned parallel to the mounting plane, and the laser diode thus emits light in a lateral direction. Such an arrangement has a favorable thermal resistance.

In the case of a tilted carrier substrate, the front side of the carrier substrate, on which the laser diode chip is attached and which faces away from the mounting plane, can lie in a plane that is inclined to the mounting plane. The light emanating from the laser light source can thus have a component in the emission direction, which in turn can reduce the demands on the optics system.

According to at least one further embodiment, the optical system has a light-reflecting optical element with at least one reflector surface. The light-reflecting optical element is provided and designed to deflect the light to the direction of emission and to align a fast axis of the beam profile along a horizontal direction.

Semiconductor laser diodes, for example, have emission characteristics that depend on the respective structure and condition. For example, edge-emitting laser diodes emit the light generated in an active region in a plane parallel to the main plane of extension of the active layer with a different opening angle than in a plane perpendicular to the main plane of extension of the active layer. In other words, the opening angles of the beam profile of a semiconductor laser diode can be different in the two said planes. The plane or direction in which the beam profile has the largest opening angle is also referred to as the fast axis (“fast axis”), while the plane or direction in which the beam profile has the smallest opening angle is called the slow axis (“slow axis”). ) referred to as.

The laser light source in the radiation-emitting device is preferably adjusted to the light-reflecting optical element such that the light emitted by the laser light source is deflected towards the emission direction, the fast axis of the beam profile thereby being aligned along the horizontal direction.

The light-reflecting optical element can have more than one reflector surface. For example, different laser emitter units can emit light onto different reflector surfaces and thus illuminate different angular areas of the environment. The at least one reflector surface of the light-reflecting optical element can be a metal-coated surface, for example. The at least one reflector surface is tilted relative to the mounting plane.

In accordance with at least one further embodiment, the reflector surface of the light-reflecting optical element is designed as a curved reflector surface. Alternatively or additionally, the reflector surface can be designed as a faceted reflector surface.

In the case of a curved reflector surface, there can be a curvature in a horizontal plan view or in a transverse plan view. Alternatively, a curve can run along both directions. In particular, the curvature of the reflector surface can be defined by a concave function along the horizontal direction. Such a curvature of the reflector surface causes the light incident on the reflector surface to be spread out in the horizontal direction.

In the case of a faceted reflector surface, the reflector surface can have bulges, through which incident light is deflected and/or widened in different directions. A curved and/or faceted reflector surface of the optical system can reduce the optical requirements of other optical elements of the optical system decorated, or other optical elements become completely superfluous. Thereby manufacturing costs can be reduced and a compactness of the system can be increased. Furthermore, the requirements for an alignment of the optical elements to one another are reduced the fewer optical elements the optical system has.

In accordance with at least one further embodiment, the optics system has a light-collimating optics element. The light-collimating optical element is provided and designed to cause the light to be collimated along a transverse direction. This can mean in particular that the light-collimating optical element changes the opening angle of the light emitted by the laser light source in the transverse direction in such a way that the illuminated angular range is smaller than the opening angle of the beam profile of the laser light source along the slow axis. The surroundings are advantageously illuminated effectively, in particular in the transverse direction.

The light-collimating optical element can have a lens body. Such a lens body can also be referred to as a bulk lens. In particular, the light-collimating optical element can have a macroscopic lens surface or be formed by it. The light-collimating optical element can have, for example, a convex lens surface, in particular a cylindrical lens-like lens surface, or be formed thereby. "Cylindrical lens-like" can mean here and in the following in particular that the shape of a section through a surface of the optical element can be described at least in sections as a conic section, as a taper, as an asphere, as a polynomial or as a combination of these. The optical element collimating the light can be designed as a Fresnel lens, which leads to a more compact optical element.

In accordance with at least one further embodiment, the optics system has a light-diverging optics element. The light-diverging optics element is provided and designed to spread the light along the horizontal direction. This can mean in particular that the light-diverging optics element changes the opening angle of the light emitted by the laser light source in the horizontal direction, i.e. preferably the opening angle of the fast axis, in such a way that a desired angular range is illuminated in the horizontal direction. The horizontal spread preferably causes an angle-dependent emission intensity that is as uniform as possible in a desired angular range, which is particularly preferably larger than the opening angle of the beam profile of the laser light source along the fast axis. In particular, the horizontal spread is preferably symmetrical. In particular, this can mean that the angle-dependent emission intensity distribution is symmetrical to the left and right in the horizontal direction. The surroundings are also effectively illuminated in the horizontal direction.

The light-diverging optical element can have or be formed by a macroscopic lens surface. The light-diverging optical element can have, for example, a concave lens surface, in particular a cylindrical lens-like lens surface, or be formed thereby. The light-diverging optical element can also be designed as a Fresnel lens, which leads to a more compact optical element.

According to at least one further embodiment, the light-diverging optics element of the optics system is designed as a microlens array, which has a plurality of microlenses. The microlenses have a dimension that is so small that the light from the laser light source and in particular the light from each laser emitter unit falls on a plurality of microlenses. The microlenses are preferably formed by structures extending one-dimensionally in one direction. In other words, each of the micro lenses can be formed by a cylindrical lens. Here and in the following, structures can be referred to as cylindrical lenses which are designed in the manner of a cylindrical lens as described further above. For example, a cylindrical lens can have a lens surface that corresponds to a shape extruded along one direction, wherein the lens surface can correspond to part of a lateral surface of a cylinder with a round and/or angular base. A “shape extruded along a direction” specifically refers to a geometric description of the shape and is not meant to be limiting in terms of the manufacturing process. In particular, such a shape can extend along an extrusion path, also referred to as an extrusion direction, whose direction vector deviates from the plane of symmetry by a maximum of 30° or a maximum of 20° or a maximum of 10°. The use of a microlens array enables the compact implementation of the light diverging optical element.

In accordance with at least one further embodiment, at least two optical elements of the optical system are formed in one piece. This can mean in particular that the light-reflecting and the light-collimating optical element can be designed in one piece. Alternatively, the light-reflecting and the light-diverging optical element can be formed in one piece. Alternatively, the light-diverging and the light-collimating optical element can be formed in one piece. In this case, the two optical elements can have a common lens body, one of which lenses surface forms the light-collimating optical element and whose other lens surface forms the light-diverging optical element. It can also be the case that the optical element reflecting the light, diverging the light and collimating the light are formed in one piece.

A one-piece design can in particular mean that elements designed in one piece are formed together by a single component. Such a one-piece component can be formed by a single component. For example, optical elements designed in one piece can be formed by different surfaces of such a component. Furthermore, a one-piece component can be formed by components that are firmly connected to one another and previously produced separately, for example components that are fused or glued together. A one-piece design leads to a reduction in optical losses, since the number of surfaces and thus Fresnel reflection losses are reduced. Furthermore, optical arrangement difficulties are avoided by the one-piece design.

Alternatively, the optical elements of the optical system can be designed separately from one another and mounted in the radiation-emitting device. In other words, the optical elements can also be designed as separate components that are arranged to match one another. Fabrication of separate components may be easier to implement compared to a one-piece design.

In accordance with at least one further embodiment, the radiation-emitting device also has a housing body. The housing body, with at least one optical element of the optical system and with the mounting plane, encloses a hermetically sealed interior space in which the laser light source is arranged. This can mean in particular that, depending on the design of the laser light source, a semiconductor laser diode or a plurality of semiconductor laser diodes is arranged in the housing body and particularly preferably electrically connected.

An optics element, several optics elements or all optics elements of the optics system can be arranged in or on the housing body and in particular mounted, for example by gluing. If all optical elements of the optical system are arranged in or on the housing body, the radiation-emitting device can be very compact. The integration of the optical function in a housing body leads to miniaturization and at the same time reduces the number of surfaces, which further reduces Fresnel reflection losses. Particularly preferably, at least one optical element of the optical system with the housing body and the mounting plane can enclose a hermetically sealed interior space in which at least the laser light source is arranged. Here and in the following, "hermetically sealed" can mean in particular that harmful substances or other harmful influences from the environment cannot get into the interior to such an extent that a damaging effect is caused, for example, in the course of a normal expected or specified service life . Furthermore, an optical element of the optical system can form an exit surface of the radiation-emitting device, through which the light is emitted into the environment.

In accordance with at least one further embodiment, the laser light source comprises at least one vertically emitting laser diode with a horizontal cavity which is arranged on the mounting plane. During operation, the vertically emitting laser diode with a horizontal cavity couples the light generated in the cavity to the emission direction via an integrated mirror layer.

A vertically emitting laser diode with a horizontal cavity can also be referred to below as an HCSEL (“Horizontal Cavity Surface Emitting Laser”). In a horizontal cavity vertical emitting laser diode, the terms "horizontal" and "vertical" refer solely to the semiconductor laser diode and not to the directions defined in connection with the radiation emitting device. However, the orientation of the cavity can be along the lateral directions, i.e. the cavity can be oriented along the horizontal and/or transverse direction. The vertical light emission of the laser diode then coincides with the emission direction of the radiation-emitting device.

A vertically emitting laser diode with a horizontal cavity is based on the construction of an edge emitting laser diode in which at least one facet is formed by trenches in the semiconductor layer sequence, via which light can be emitted parallel to the active layer during operation. The surface of the semiconductor layer sequence opposite the at least one facet and produced by the trenches is inclined at an angle of 45°, for example, and is reflective, so that the light emitted by the facet onto this surface is emitted in a direction perpendicular to the main plane of extension of the active layer becomes.

In order to produce such a laser light source, parts of the semiconductor layer sequence can be integrated into monolithically integrated deflection elements after the growth thereof, for example by etching be structured with a reflector surface. The light output surfaces are formed opposite the reflector surfaces, so that during operation light emitted by the light output surfaces is radiated onto the reflector surfaces. The reflector surfaces can preferably be coated with a reflective coating, for example a metal coating or a Bragg mirror layer sequence. The deflection elements produced in this way can be designed, for example, as straight prisms with a flat reflector surface or as curved prisms with a curved reflector surface, which can be used, for example, to generate a circular light spot.

Alternatively, the vertically emitting laser diode can also have reflector surfaces, for example, which, via total reflection, deflect the light generated in the active layer during operation in a direction perpendicular to the resonator direction before it emerges from the semiconductor layer sequence. Training forms for such laser diodes are in the publications DE 10 2007 062 050 B4 and U.S. 2009/0097519 A1 described from the same patent family, the disclosure contents of which are hereby incorporated in their entirety.

By using a vertically emitting laser diode, no external mirror and no deflection of the laser light emitted by the laser diode are required. This means there are fewer discrete components that need to be aligned with one another. This in turn reduces the manufacturing costs. Furthermore, the radiation-emitting device can thus be reduced in size. If a plurality of vertically emitting laser diodes are used or the vertically emitting laser diode consists of a plurality of laser emitter units, these can have a common anode. Advantageously, the emission characteristics of an edge-emitting laser diode can be retained through the use of a vertically emitting laser diode, as a result of which a narrow, slow axis of the beam profile is formed in the far field than would be the case using a VCSEL diode. This in turn leads to reduced demands on the optical system used.

In accordance with at least one further embodiment, the at least one vertically emitting laser diode with a horizontal cavity has a plurality of emission regions, starting from which light is coupled out along the emission direction.

As described above, the emission regions are formed by trenches in the semiconductor layer sequence. Here, a plurality of facets are formed, and an inclined surface opposed to each facet. The opposite inclined surface reflects the light emitted by the respective facet in a direction that is perpendicular to the main plane of extension of the active layer. The emission areas can be arranged in a line and separated from each other by a defined distance. For example, there is in each case an emission region at opposite ends of the laser diode chip. Advantageously, the plurality of emission areas results in better illumination of the optics system and thus of the surroundings. Wear is also reduced by distributing the emitted light over a number of emission areas. In particular, a high intensity of the radiation and/or a long operating time can promote melting of the active layer in the emission area. Melting is regularly referred to as COD (Catastrophic Optical Damage). The COD level is reduced by the distribution over several emission areas. In addition, the use of multiple emission regions leads to higher homogeneity at the outer edges of the field of view, also called FoV (Engl: "Field of View") of the radiation-emitting device. This is possible by superimposing two or more beams of rays from the same laser diode chip.

In accordance with at least one further embodiment, the at least one vertically emitting laser diode has a plurality of horizontal cavities which are arranged in pairs opposite one another around a central emission region. This can mean that laser light is generated in each of the opposing cavities, which laser light is emitted via a common central emission area. The horizontal cavities and the emission area are arranged in the lateral plane. For example, a vertically emitting laser diode can have two opposite horizontal cavities and an emission region located between the cavities. It is also possible for several horizontal cavities to be arranged in a star shape around a central emission area.

A vertically emitting laser diode with a plurality of horizontal cavities can also be understood as a connection of several HCSEL diodes that share an emission area. In other words, this arrangement connects two or more HCSEL diodes together. In this way, a high power of the laser light can be achieved and a compact laser diode chip can be realized. Because the emission area is small compared to the entire laser diode chip, a small etendue can be achieved, ie the extent of a radiated beam can be small. In particular, in the case of horizontal cavities arranged in a star shape, the light cone emitted by the emission area can be symmetrical and thus differ from the typical beam profile of an edge-emitting emitter.

According to at least one further embodiment, each of the at least one vertically emitting laser diode is assigned a further optical element. The additional optical element is provided and designed to deflect the light coupled out from the respective laser diode to the direction of emission along the horizontal direction.

This can mean that a further optical element is arranged on the at least one emission region of a vertically emitting laser diode. The further optical element can be arranged in the emission direction on or above the respective emission area. The further optics element can be mounted directly on the laser diode chip, thereby avoiding an alignment of the further optics element in the radiation-emitting device. In one embodiment, the further optical element is a refractive optical element. Alternatively, the additional optical element can also be diffractive or phase-modulating. If a plurality of laser diode chips is used, the additional optical elements can in particular ensure that the light cones emitted by the laser diode chips are deflected in different directions. In this way, the optical system and the environment can be effectively illuminated.

In particular, individually addressable and controllable laser diode chips that emit sequential light flashes can be used in this embodiment. The laser diode chips can be controlled individually or in groups. Each laser diode chip or group of laser diode chips can illuminate a different area in the far field, with the beam profile in the far field being optimized by the optics system. In particular, the optical system can be such that different beam patterns are generated for different areas of the far field, i.e. the beam profile can be different for each of the illuminated areas in the far field.

According to at least one further embodiment, the further optical element is a prism. Alternatively, the further optical element can be a diffraction grating, a photonic crystal, or an integrated phase modulation structure. With the help of a prism, a diffraction grating, a photonic crystal, or an integrated phase modulation structure, the beam of rays emitted by a laser diode chip can be modeled and deflected in different directions.

According to at least one further embodiment, the at least one laser light source comprises a vertical cavity surface-emitting laser diode arranged on the mounting plane. During operation, the surface-emitting laser diode with a vertical cavity couples the light generated in the cavity to the emission direction.

A vertically emitting laser diode with a vertical cavity can also be called a VCSEL diode (VCSEL: "vertical-cavity surface-emitting laser"). In this type of laser diode, the light generated in the at least one active layer during operation is emitted via a surface of the semiconductor layer sequence arranged parallel to the active layer. The VCSEL diode can be applied directly at the assembly level. If edge-emitting diodes are also used in addition to one or more VCSEL diodes, the VCSEL diode can also be arranged together with these on a carrier substrate, which facilitates fabrication and reduces alignment difficulties.

A VCSEL diode has a more symmetrical beam profile in the far field than an edge-emitting laser diode. For example, in the far field, the light cone of an edge-emitting laser diode can achieve a beamwidth of about 120° along the fast axis and about 12° along the slow axis. In contrast, the light cone of a VCSEL diode or a VCSEL diode array in the far field can achieve opening angles of about 30°-60° in the horizontal direction and 30° in the transverse direction. The use of a VCSEL diode or a VCSEL diode array can therefore be advantageous in order to illuminate obstacles above the road, such as ramps, bridges or garages, in the far field. For example, the VCSEL diode or VCSEL diode array can be turned on or off depending on the situation. The light emanating from the VCSEL diode or from the VCSEL diode array can advantageously be emitted without additional collimation, and the radiation-emitting device can therefore be implemented in a compact manner.

According to at least one further embodiment, the optics system forms a dome-shaped exit surface for the emitted light. Alternatively, the optics system has a plurality of exit surfaces whose surface normals point in different directions.

The exit surface or the plurality of exit surfaces can cover the housing body. In the case of a dome-shaped exit surface, the exit surface can be arranged, for example, in a hemispherical shape above the mounting plane and can end with the housing body. The optical elements mentioned above, in particular the light-diverging and/or the light-collimating optical element, can be integrated in the exit surface. If the optical system has a plurality of exit surfaces, these can be flat surfaces in sections. Furthermore, the exit surfaces can be connected to one another in a suitable manner, for example glued, and can end with the housing body. Starting from a central point on the mounting plane, the exit surface or the plurality of exit surfaces can cover a large solid angle in the horizontal direction. With the aid of a dome-shaped exit surface or a plurality of exit surfaces whose surface normals point in different directions, the radiation-emitting device can emit light over a wide angular range. For example, an angular range of approximately 240° in the horizontal direction and 12° in the vertical direction can be covered. Particularly preferably, this embodiment can be combined with embodiments in which edge-emitting laser diodes are arranged on carrier substrates that are tilted relative to the mounting plane, so that the laser diodes emit light essentially perpendicularly to a respective exit surface. Alternatively, a bundle of rays emitted by a laser diode can be deflected essentially perpendicularly to the respective exit surface with appropriate light-reflecting optical elements, as explained above. Such a radiation-emitting device can be mounted on the roof of a vehicle, for example, so that a large angular range around the vehicle is illuminated.

According to at least one further embodiment, a measuring system has such a radiation-emitting device. Furthermore, the measuring system has a detector unit. The detector unit is provided and set up to detect light emitted by the radiation-emitting device and reflected to the detector unit. The detector unit is arranged on the assembly plane or on another assembly plane aligned essentially parallel to the assembly plane.

The radiation-emitting device can in particular form a transmitter unit of the measurement system and be provided and set up to emit at least one light pulse or continuously emitted light as a transmitter signal during operation. Depending on the desired application, a light pulse can, for example, have the form of a square pulse, a sawtooth pulse, a triangular pulse, a half-wave or a combination thereof. A continuously emitted light can in particular be modulated, for example amplitude and/or phase modulated.

The detector unit can have a detector element, for example in the form of a photodiode or a photodiode array. For example, the detector unit can have a SPAD array (SPAD: “single-photon avalanche diode”, single-photon avalanche diode), an APD array (APD: “avalanche photodiode”, avalanche photodiode) or what is known as a gated imaging system. The detector unit is provided and set up to receive a return signal which has at least a part of the transmitter signal radiated back from an external object. The return signal can accordingly correspond to a transmitter signal that is attenuated and/or at least partially frequency-shifted and/or at least partially phase-shifted at least with respect to some spectral components, which can be caused by interactions of the transmitter signal with the object. In a method for operating such a measuring system, the radiation-emitting device designed as a transmitter unit emits a transmitter signal. The receiver unit detects the return signal.

For example, the method can be used to determine one or more parameters related to the transmitter signal and/or the return signal. The one or more parameters can be selected, for example, from a time difference between the transmitter signal and the return signal, a wavelength shift and/or phase shift between the transmitter signal and the return signal, a spectral change between the transmitter signal and the return signal. One or more state variables in relation to the object that at least partially reflects the transmitter signal can be derived from the one or more parameters determined by evaluation, for example a distance and/or a speed and/or at least one or more speed components and/or at least a part a chemical and/or physical composition. In order to determine the parameters, the measuring system can also have an evaluation unit provided and set up for this purpose. In particular, the measurement system can have properties and features of a LIDAR system or be a LIDAR system.

In particular, as mentioned above, a detector unit has an upwardly directed field of view. Advantageously, the radiation-emitting device emits light perpendicular to the mounting plane and thus has the same or a similar field of view as the detector unit. The Radiation Emitting The device and the detector unit can thus be arranged on the same assembly level, or on assembly levels aligned parallel to one another. It is not necessary to rotate the mounting level by 90°.

According to at least one embodiment of the measuring system, the laser light source and the detector unit are arranged in a common housing body. It can be advantageous here if the housing body has an optical separation between the laser light source and the detector unit, for example in the form of a partition. The measuring system can be very compact thanks to a common housing body. For example, the radiation-emitting device and the detector unit can be arranged on the same mounting level, e.g.

Electrical connection and/or optical alignment are thereby facilitated.

According to at least one further embodiment, a vehicle has such a measuring system. The vehicle can be, for example, a road vehicle, a rail vehicle, a watercraft or an aircraft. The vehicle is particularly preferably a motor vehicle such as a passenger car or a truck. Furthermore, it is also possible to use the measuring system, for example, in another device such as a fixed installation, for example in a monitoring device. Accordingly, such a device, for example a monitoring device, for example for traffic management, parking lot management, a security application or industrial purposes, can have the measuring system.

The previous and following description relates equally to the radiation-emitting device, the measurement system with the radiation-emitting device and uses of the measurement system, ie for example a vehicle or a permanently installed device with the measurement system.

Further advantages, advantageous embodiments and developments result from the exemplary embodiments described below in connection with the figures.

• 1 zeigt eine schematische Darstellung einer Strahlung emittierenden Vorrichtung gemäß eines Ausführungsbeispiels.
• 2 und 3 zeigen schematische Darstellungen von Laserlichtquellen und Eigenschaften dieser gemäß weiterer Ausführungsbeispiele.
• 4 zeigt eine schematische Darstellung einer Strahlung emittierenden Vorrichtung gemäß eines weiteren Ausführungsbeispiels.
• 5a bis 5c zeigen schematische Darstellungen eines Optiksystems gemäß 4.
• 6 bis 12 zeigen schematische Darstellungen einer Strahlung emittierenden Vorrichtung gemäß weiterer Ausführungsbeispiele.
• 13 zeigt eine schematische Darstellung einer Laserlichtquelle und Eigenschaften dieser gemäß weiterer Ausführungsbeispiele.
• 14 zeigt eine schematische Darstellung einer Strahlung emittierenden Vorrichtung gemäß weiterer Ausführungsbeispiele.
• 15 zeigt eine schematische Aufsicht einer Laserlichtquelle und Eigenschaften dieser gemäß weiterer Ausführungsbeispiele.
• 16 zeigt eine schematische Darstellung einer Strahlung emittierenden Vorrichtung gemäß weiterer Ausführungsbeispiele.
• 17 zeigt eine schematische Aufsicht einer Laserlichtquelle und Eigenschaften dieser gemäß weiterer Ausführungsbeispiele.
• 18 zeigt eine schematische Darstellung einer Strahlung emittierenden Vorrichtung gemäß weiterer Ausführungsbeispiele.
• 19 zeigt eine schematische Darstellung eines Strahlprofils im Fernfeld gemäß weiterer Ausführungsbeispiele.
• 20 und 21 zeigen schematische Darstellungen einer Strahlung emittierenden Vorrichtung gemäß weiterer Ausführungsbeispiele.
• 22 zeigt eine schematische Detailansicht gemäß des Ausführungsbeispiels von 21.
• 23 zeigt eine schematische Darstellung einer Strahlung emittierenden Vorrichtung gemäß weiterer Ausführungsbeispiele.
• 24 zeigt eine Abstrahlcharakteristik einer Strahlung emittierenden Vorrichtung gemäß eines weiteren Ausführungsbeispiels.
• 25 zeigt eine schematische Darstellung eines Messsystems gemäß eines Ausführungsbeispiels.
• 26 bis 28 zeigen schematische Darstellungen eines Fahrzeugs und einer Vorrichtung mit einem Messsystem gemäß weiterer Ausführungsbeispiele.

In the exemplary embodiments and figures, elements which are the same, of the same type or have the same effect can each be provided with the same reference symbols. The elements shown and their proportions to one another are not to be regarded as true to scale; instead, individual elements, such as layers, components, components and areas, may be shown in an exaggerated size for better representation and/or better understanding.

• 1 shows a schematic representation of a radiation-emitting device according to an embodiment.
• 2 and 3 show schematic representations of laser light sources and properties of these according to further exemplary embodiments.
• 4 shows a schematic representation of a radiation-emitting device according to a further embodiment.
• 5a until 5c show schematic representations of an optical system according to FIG 4 .
• 6 until 12 show schematic representations of a radiation-emitting device according to further exemplary embodiments.
• 13 shows a schematic representation of a laser light source and properties of this according to further exemplary embodiments.
• 14 shows a schematic representation of a radiation-emitting device according to further exemplary embodiments.
• 15 shows a schematic top view of a laser light source and properties of this according to further exemplary embodiments.
• 16 shows a schematic representation of a radiation-emitting device according to further exemplary embodiments.
• 17 shows a schematic top view of a laser light source and properties of this according to further exemplary embodiments.
• 18 shows a schematic representation of a radiation-emitting device according to further exemplary embodiments.
• 19 shows a schematic representation of a beam profile in the far field according to further embodiments.
• 20 and 21 show schematic representations of a radiation-emitting device according to further exemplary embodiments.
• 22 shows a schematic detailed view according to the embodiment of FIG 21 .
• 23 shows a schematic representation of a radiation-emitting device according to further exemplary embodiments.
• 24 FIG. 1 shows an emission characteristic of a radiation-emitting device according to a further exemplary embodiment.
• 25 shows a schematic representation of a measurement system according to an embodiment.
• 26 until 28 show schematic representations of a vehicle and a device with a measuring system according to further exemplary embodiments.

In connection with the 1 an exemplary embodiment of the radiation-emitting device 100 is shown, based on which a possible arrangement concept of a mounting plane 6, a laser light source 1 and an optical system 2 is to be illustrated.

The radiation-emitting device 100 according to FIG 1 is arranged on a mounting plane 6 extending in lateral directions x, y and is intended to emit light along an emission direction z, wherein the emission direction z comprises a direction perpendicular to the assembly plane 6 . Two possible beam paths are in 1 represented by arrows. The radiation-emitting device 100 has at least one laser light source 1, which in 1 is shown purely by way of example in the form of a laser diode chip. Furthermore, the radiation-emitting device 100 has a non-imaging optical system 2 which is arranged downstream of the at least one laser light source 1 and comprises at least one optical element 21, 22, 23. The optics system 2 is provided and designed to shape a beam profile of the radiation-emitting device 100 along the lateral directions x, y.

In 1 the laser light source 1 is arranged on a carrier substrate 7, which is placed on the mounting plane 6. The carrier substrate has a front and rear side that are plane-parallel to the mounting plane. The back of the carrier substrate 7 faces the mounting level 6 and is directly connected to it. The laser light source 1 is arranged on the front side of the carrier substrate facing away from the mounting plane. The laser light source 1 can be electrically connected to the mounting level via the carrier substrate 7 . For this purpose, the mounting level can be embodied as a printed circuit board or circuit board ("PCB: printed circuit board") and enable mounting and electrical connection of the laser light source 1 by means of suitable electrical contacts.

The laser diode chip 1 off 1 has a main extension plane, which runs essentially parallel to the mounting plane. The laser diode chip 1 decouples laser light on a side face that runs essentially perpendicularly to the main direction of extent. This means that the laser light source 1 is off 1 can be designed as an edge-emitting laser diode. In this case, the emission direction of the laser light source 1 is not identical to the emission direction z of the radiation-emitting device 100. Rather, the emission direction of the laser light source 1 runs along a lateral direction x, y, for example along the horizontal direction x, as in FIG 1 implied.

A light-reflecting optical element 21 with at least one reflector surface 25 is also arranged on the mounting plane 6 . The light-reflecting optical element 21 is part of the optical system 2. The reflector surface 25 can be realized, for example, by a metal coating. The laser light emitted by the laser light source 1 is projected onto the reflector surface 25 . The light-reflecting optical element 21 is provided and designed to deflect the light to the emission direction z. Furthermore, the light-reflecting optical element 21 can be provided for aligning a fast axis 13 of the beam profile along a horizontal direction x. How based on 3 explained, an edge-emitting laser diode has in particular a beam profile which has a different aperture angle in a plane perpendicular to the main plane than in a plane parallel to the main plane. The plane or direction in which the beam profile has the largest opening angle is also referred to as the fast axis 13 (“fast axis”), while the plane or direction in which the beam profile has the smallest opening angle is referred to as the slow axis 14 (“slow axis”). ) referred to as. In other words, the light-reflecting optical element 21 rotates the fast axis 13 of the laser light source 1 by 90°, so that the largest opening angle of the beam profile is aligned along the horizontal direction z. In this way, for example, a wide street area can be illuminated. The slow axis 14 of the beam profile is associated with the transverse direction y and can, for example, correspond to the direction perpendicular to the roadway.

The laser light source 1 on the carrier substrate 7 and the light-reflecting optical element 21 are arranged on the mounting plane 6 within a housing body 5 . The housing body 5 is firmly connected to the mounting level 6 and forms, as in 1 to see the side surfaces of the radiation-emitting device 100. The housing body 5 can be, for example, a plastic housing or ceramic housing.

The optical system 2 of the radiation-emitting device can also have further optical elements 22, 23, as in FIG 1 shown. In particular, the optics system 2 can have a light-collimating optics element 22 which is provided and designed to collimate the light along the transverse direction y. The optics system 2 also has a light-diverging optics element 23, which is provided and designed for spreading the light along to effect the horizontal direction x, as in 1 you can see. As exemplified in 1 shown, the light-collimating optical element 22 and the light-diverging optical element 23 can be formed in one piece. The two optical elements 22, 23 can, for example, have a common lens body, one lens surface of which forms the light-collimating optical element 22 and the other lens surface of which forms the light-diverging optical element 23. The light-collimating optics element 22 and the light-diverging optics element 23 can be designed as macroscopic lenses or as microlens arrays.

The housing body 5 can, as in 1 shown, with at least one optical element 21, 22, 23 of the optical system 2 and the mounting plane 6 enclose a hermetically sealed interior space in which the laser light source 1 is arranged. In the embodiment after 1 the light-collimating optical element 22 and the light-diverging optical element 23 form a cover for the housing body 5 and seal it hermetically. Optionally, a cover can also be formed by a plate that is transparent to the laser light, for example a glass plate.

In connection with the 2 and 3 exemplary embodiments of laser light sources 1 that can be used in the radiation-emitting device 100 are shown. In particular, the laser light source 1 of the radiation-emitting device 100 can have one or more laser emitter units 10 .

In 2 1, a semiconductor laser diode is shown as the laser light source 1, which is designed as an edge-emitting laser diode and which forms a laser emitter unit 10. The semiconductor laser diode has a semiconductor layer sequence 11 with an active layer 12 which is designed and provided to generate light in at least one active region during operation. The active layer 12 can form the semiconductor layer sequence 11 together with a plurality of semiconductor layers and can have a main extension plane which is perpendicular to an arrangement direction of the layers of the semiconductor layer sequence 11 . The semiconductor laser diode has a light coupling-out surface and a rear surface opposite the light coupling-out surface. The light coupling-out surface and the rear surface can in particular be side surfaces of the semiconductor laser diode, particularly preferably side surfaces of the semiconductor layer sequence 11, which can also be referred to as so-called facets. During operation, the semiconductor laser diode can emit the light generated in the at least one active region of the active layer 12 via the light coupling-out surface. Suitable optical coatings, in particular reflective or partially reflective layers or layer sequences, which can form an optical resonator for the light generated in the active layer 12, can be applied to the light coupling-out surface and the rear surface. The at least one active region of the active layer 12 can extend between the rear surface and the light coupling-out surface along a direction that defines the resonator direction.

The active layer 12 and in particular the semiconductor layer sequence 11 with the active layer 12 can be applied to a substrate (not shown). For example, the substrate can be in the form of a growth substrate on which the semiconductor layer sequence 11 is grown. The active layer 12 and in particular the semiconductor layer sequence 11 with the active layer 12 can be grown by means of an epitaxy method, for example by means of metal-organic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). Furthermore, the semiconductor layer sequence 11 can be provided with electrical contacts (not shown) in the form of one or more contact elements. In addition, it can also be possible for the growth substrate to be removed after the growth process. In this case, the semiconductor layer sequence 11 can, for example, also be transferred after the growth onto a substrate embodied as a carrier substrate. The substrate can have, for example, sapphire, GaAs, GaP, GaN, InP, SiC, Si, Ge and/or a ceramic material such as SiN or AlN or be made of such a material.

The light generated by the laser light source 1 during operation is particularly preferably long-wave light in the infrared spectral range and has a wavelength of greater than or equal to 800 nm or greater than or equal to 850 nm. Furthermore, the light can have a wavelength of less than or equal to 2 μm, or less than or equal to 1.5 μm, or less than or equal to 1 μm. A preferred wavelength may be around 940 nm. For example, a semiconductor layer sequence 11 or at least one active layer 12 based on In _x Ga _y Al _1-xy As or based on In _x Ga _y Al _1-xy P is suitable for long-wave infrared radiation, with 0≦x≦ in each case 1, 0 ≤ y ≤ 1 and x + y ≤ 1.

The active layer 12 can have, for example, a conventional pn junction, a double heterostructure, a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure) or other suitable structures for light generation. In addition to the active layer 12, the semiconductor layer sequence 11 can have further functional layers and functional regions, for example p- or n-doped charge carrier transport layers, ie Electron or hole transport layers, undoped or p- or n-doped confinement, cladding or waveguide layers, barrier layers, planarization layers, buffer layers, protective layers and/or electrode layers and combinations thereof. In addition, additional layers, such as buffer layers, barrier layers and/or protective layers, can also be arranged perpendicular to the growth direction of the semiconductor layer sequence 11, for example around the semiconductor layer sequence 11, i.e. for example on the side surfaces of the semiconductor layer sequence 11.

In the active layer 12, a plurality of active regions arranged next to one another perpendicularly to the resonator direction can also be formed, which can be controlled independently of one another or preferably together. In such an embodiment, also referred to as a laser bar, the semiconductor laser diode and thus the laser light source 1 has a plurality of laser emitter units 10 .

As in 2 is indicated, the beam profile of the light generated by the edge-emitting laser diode during operation has a different opening angle in a plane perpendicular to the main plane of extension of the active layer 12 than in a plane parallel to the main plane of extension of the active layer 12 . This applies both to laser diodes that oscillate in the so-called TM mode (TM: transverse magnetic) or in the so-called TE mode (TE: transverse electric). The plane or direction in which the beam profile has the greatest opening angle and which, in the exemplary embodiment shown, corresponds to the plane perpendicular to the main extension plane of the active layer 12, is also referred to as the fast axis 13 (“fast axis”), while the plane or direction in which the beam profile has the smallest opening angle and which, in the exemplary embodiment shown, corresponds to the plane parallel to the main extension plane of the active layer 12, is referred to as the slow axis 14.

In connection with the 3 a further exemplary embodiment of a laser light source 1 is shown which, in comparison to the previous exemplary embodiment, has a plurality of laser emitter units 10 in the form of a plurality of active layers 12 which are stacked one on top of the other within the semiconductor layer sequence 11 and can be connected to one another in series, for example via tunnel junctions. Furthermore, contact elements, for example in the form of electrode layers, can also be provided for each active layer 12, via which the active layers 12 can be controlled separately. The active layers 12 and the other layers of the semiconductor layer sequence 11 are particularly preferably grown in a stress-optimized manner.

Furthermore, a plurality of active regions can also be formed next to one another in each active layer 12, resulting in a two-dimensional matrix of laser emitter units 10. The active regions arranged one above the other can, for example, be controlled together and form a channel, so that such a laser light source can have a number of multi-emitter channels. Purely as an example, the in 4 Laser light source 1 shown has seven active layers 12 stacked one on top of the other. As an alternative to this, more or fewer active layers 12 can also be present, for example three or five active layers.

In connection with the 4 Another exemplary embodiment of the radiation-emitting device 100 is shown. The embodiment after 4 differs from the embodiment 1 in that the optical elements 21, 22, 23 are made in one piece. This means that the light-reflecting 21, the light-collimating 22 and the light-diverging optical element 23 are designed as a one-piece component. Further details of such an optical system 2 are given below 5a until 5c shown.

5a FIG. 12 shows a three-dimensional schematic representation of the optical system 2 according to the exemplary embodiment 4 . In this exemplary embodiment, the light-collimating optical element 22 and the light-diverging optical element 23 have a common lens body 24, with the light-collimating optical element 22 being arranged on one side of the lens body and the light-diverging optical element 23 being arranged on the other side of the lens body. In the example shown, the light-collimating optical element 22 and the light-diverging optical element 23 are designed as macroscopic cylindrical lens-like lenses. The light-collimating optical element 22 is designed as a convex, ie outwardly curved, cylindrical lens which is aligned along the horizontal direction x. The light-diverging optical element 23 is designed as a concave, that is to say inwardly curved, cylindrical lens which is aligned along the transverse direction y. Alternatively, the light-collimating optics element 22 and the light-diverging optics element 23 can be designed as microlens arrays or as Fresnel lenses in order to enable a compact design of the optics system 2 .

The light-reflecting optical element 21 is connected to the lens body 24 via a holder at an upper end. The light-reflecting optical element 21 can be in contact with the mounting plane 6 at a lower end. That Light-reflecting optical element 21 is tilted in the horizontal direction x with respect to the mounting plane 6 .

In the 5b and 5c are side views of the in 5a shown optical system 2 to see. Possible beam paths are illustrated as examples. In 5b the spread of the beam profile along the horizontal direction x can be seen, which is mainly caused by the light-diverging optical element 23 . However, the light-reflecting optical element 21 can also contribute to spreading the beam profile. After the optics system 2, the beam profile of the radiation-emitting device 100 has an aperture angle C′″ in the horizontal direction x.

In 5c one can see the collimation of the beam profile along the transverse direction y, which is mainly caused by the light-collimating optics element 22. After the optical system 2, the beam profile of the radiation-emitting device 100 has an opening angle θ _y in the transverse direction y.

Combined with 6 Another exemplary embodiment of the radiation-emitting device 100 is shown. The embodiment after 6 differs from the embodiment 1 in that the light-reflecting optical element 21 has a curved reflector surface 25 . As in 6 indicated, the curvature of the reflector surface 25 along the horizontal direction x can be implemented as a concave function. In this case, the light-reflecting optical element 21 is therefore designed as a cylinder segment. The light-reflecting optical element 21 can also have a curvature along the transverse direction y. The curved reflector surface 25 supports the spread of the beam profile along the horizontal direction x. Along the transverse direction y, the curvature of the reflector surface 25 can contribute to the collimation of the beam profile. In this way, the optical requirements for the light-collimating optical element 22 and the light-diverging optical element 23 are reduced.

In 7 is a further development of the in 6 shown embodiment to see. In addition to the curvature, the reflector surface 25 has facets that are designed as bulges within the reflector surface 25 . The facets achieve spreading of the beam profile along the horizontal direction x and collimation of the beam profile along the transverse direction y. This arrangement further reduces the optical requirements for the light-collimating optics element 22 and the light-diverging optics element 23 . In one exemplary embodiment, these two optical elements can be replaced by a planar plate that is only transparent to light, with the plate being designed as a cover for the housing body 5 . The optical system 2 is advantageously formed by only one optical element 21 .

In the 8th The radiation-emitting device 100 shown has a multiplicity of reflector surfaces 25 of the light-reflecting optical element 21 . The reflector surfaces 25 are arranged along the transverse direction y. The reflector surfaces 25 have different angles of inclination in relation to the mounting plane 6 . The laser light source 1, which can in particular have a plurality of laser emitter units along the transversal direction y, emits light onto each of the reflector surfaces 25, so that it is deflected in different directions along the direction of emission z, as shown in FIG 8th arrows shown. In this way, a large opening angle C'' can be realized in the horizontal direction x.

In 9 FIG. 14 is a perspective view of the laser light source 1 and the light-reflecting optical element 21 of FIG 8th shown embodiment to see. Laser emitter units 10 are arranged on a common carrier substrate 7 along the transverse direction y. The laser emitter units 10 can be designed as separate laser diode chips or as laser bars. Each of the laser emitter units 10 emits light onto one of the reflector surfaces 25, on which the light is reflected in different directions along the emission direction z. The light-reflecting optical element 21 can be designed as a one-piece component, as in FIG 9 shown.

Combined with 10 a further exemplary embodiment of the radiation-emitting device 100 is shown. In this exemplary embodiment, the radiation-emitting device 100 has a plurality of laser light sources 1 , 1 ′ at different peripheral positions on the mounting plane 6 . The laser light sources 1 are in the form of separate laser diode chips 1 which are arranged on respective carrier substrates 7 . The laser light sources 1 emit light onto a light-reflecting optical element 21 positioned centrally on the mounting plane 6 , the light-reflecting optical element 21 having reflector surfaces 25 , 25 ′ that face the respective laser light source 1 . As in 10 shown, the light-reflecting optical element 21 can have a pyramidal structure, with the reflector surfaces 25, 25' representing side surfaces of the pyramidal structure. The light emitted by a first laser light source 1, which is reflected by a first reflector surface 25 in the emission direction z, illuminates a first angular range θ _x in the horizontal direction direction x, while the light emitted by a second laser light source 1' and reflected by a second reflector surface 25' in the emission direction z illuminates a second angular range θ _x 'in the horizontal direction x. The first angular range θ _x and the second angular range θ _x 'can adjoin one another or slightly overlap. For example, both angular ranges θ _x , θ _x ′ each comprise 60°, as a result of which the radiation-emitting device 100 illuminates a total angular range of up to 120°. By distributing the total angular range over a plurality of laser light sources 1, 1' and/or reflector surfaces 25, 25', the optical requirements for a light-diverging optical element 23 are reduced. Furthermore, the heat generated by the individual laser diode chips 1 can be better dissipated.

Combined with 11 Another exemplary embodiment of the radiation-emitting device 100 is shown. Instead of the edge-emitting laser diodes used in the aforementioned examples, the exemplary embodiment shown has a vertically emitting laser diode 1 with a horizontal cavity 16 (not shown), which, during operation, has an integrated mirror layer 17 (see FIG 13 ) decouples the light generated in the cavity to the emission direction z. The vertically emitting laser diode has an emission region 15, starting from which light is coupled out along the emission direction z.

Furthermore, in order to influence the radiation emitted by the laser light source 1, one, two or more optically active layers can be formed on one, two or more boundary surfaces of the laser diode chip 1. In this context, the optically active layers serve to increase or reduce reflection at the corresponding interface. The optically active layers include, for example, a first and/or second optically active surface layer 31, 32. The optically active layers can influence a radiation yield per energy expended. Furthermore, an energy threshold, in other words a laser threshold, from which laser radiation is generated can be lowered. Furthermore, a radiant power of the vertically emitting laser diode 1 can be set at a given supply energy by the optically active layers. Furthermore, the optically effective layers can be used to specify a wavelength of the radiation emerging from the laser light source 1 in a particularly precise manner.

The first optically effective surface layer 31 can, for example, reduce a reflection of the radiation coupled out of the emission region and can therefore be designed as an anti-reflective layer.

Alternatively or additionally, for example, the second optically effective surface layer 32 can increase reflection at the surface of the laser light source 1 . In this case, the reflection by the second optically effective surface layer 32 can be increased, for example, to such an extent that almost total reflection takes place on the surface of the laser light source 1 . This means that the active layer 12 (see 13 ) out-coupled radiation is reflected back into the active layer 12 . The effect of this is that the radiation only exits in a small emission area 15 . Furthermore, the laser threshold at which laser beam generation occurs can thereby be lowered. As an alternative to this, only one of the two optically active surface layers 31, 32 can also be provided. The use of a vertically emitting laser diode 1 means that no optical element 21 that reflects external light is necessary, since the light generated in the cavity is deflected by an integrated mirror layer 17 .

Combined with 12 Another exemplary embodiment of the radiation-emitting device 100 is shown. Here, the vertically emitting laser diode 1 has a plurality of emission regions 15, which are preferably arranged in a line along the horizontal direction x. Examples are in 12 two emission regions 15 at opposite ends of the laser diode chip 1 are shown. An optically active surface layer 31 can be arranged at or on each of the emission regions 15, which is embodied, for example, as an anti-reflective layer. The optical system 2 and the surroundings can be illuminated homogeneously with the aid of the plurality of emission regions 15 since the beam paths emanating from the emission regions 15 can be superimposed. Furthermore, the wear, for example in the form of melting of the active layer 12, is reduced by the distribution over a plurality of emission regions 15 within a laser diode chip 1.

In 13 is a detailed view for a laser light source 1 shown in the embodiments of the radiation-emitting device according to the 11 , 12 , 14 and 16 can be used. The vertical emitting horizontal cavity laser diode according to FIG 13 has a plurality of emission regions 15, and thus a plurality of laser emitter units 10. The emission direction of the in 13 The laser light source 1 shown can coincide with the emission direction z of the radiation-emitting device.

In the 13 The laser light source 1 shown is based on the construction of an edge-emitting laser diode, in which a plurality of facets are formed by trenches in the semiconductor layer sequence 11, via which light is emitted parallel to the active one during operation Layer 12 can be radiated. Surfaces of the semiconductor layer sequence 11 that are opposite the facets and are produced by the trenches are inclined at an angle of 45°, for example, and are formed with an integrated mirror surface 17, so that the light emitted onto it by the facets is in a direction perpendicular to the main plane of extension of the active layer direction, as in 13 is indicated by the dashed arrows. For more details of the in 13 laser light source 1 shown, reference is made to the explanations of the general part of this description.

In 14 1 shows a cross section of a further exemplary embodiment, in which the vertically emitting laser diode 1 has a plurality of horizontal cavities 16 which are arranged in pairs opposite one another around a central emission region 15 . Laser light is generated in each of the opposing cavities 16 and is emitted via the common central emission area 15 . For example and as in 14 indicated, the laser diode comprises two cavities 16 and an emission region 15, so that the emission region 15 lies between the two cavities 16. As in the examples explained above, one, two or more optically active layers 31, 32 can be arranged on the surface of the laser light source 1. Such a laser light source 1 achieves a high light output. Furthermore, the laser light source has a small etendue due to the small common emission region 15, and the cone of light emitted from the emission region 15 can be more symmetrical than that of a typical edge-emitting laser diode.

Furthermore, as in 15 shown, several such laser emitter units 10 are combined. 15 shows a top view of a one-dimensional array of laser emitter units 10, each laser emitter unit 10 being formed by a vertically emitting laser diode 1 with two cavities 16 arranged around a central emission region 15. The laser emitter units 10 can preferably be arranged along the transverse direction y. Furthermore, as in 15 meta-optics may be placed over each of the emission regions 15 as shown. The meta-optics can be embodied as a further optical element 18, such as a diffraction grating, and can be provided to direct the light emitted by the respective laser emitter unit 10 in a predefined direction and/or to shape the beam profile of the light emitted by the respective laser emitter unit 10. Furthermore, the laser emitter units 10 can preferably be controlled individually, so that specific angular ranges can be defined which are illuminated more frequently and others which are illuminated less frequently.

In 16 1 is a perspective view of another embodiment, again using a one-dimensional array of laser emitter units 10. FIG. The laser emitter units 10 are in the form of vertically emitting laser diodes each having an emission region 15 . Further optical elements 18 are arranged on or above the emission region 15 of the first and third laser emitter unit 10, which are shown as prisms by way of example. Alternatively, the further optical element 18 can be a diffraction grating, a photonic crystal, or an integrated phase modulation structure. The further optical element 18 is provided and designed to deflect the light coupled out from the respective laser emitter unit or laser diode to the emission direction z along the horizontal direction x, so that a wide angular range in the horizontal direction x can be illuminated.

17 shows another example of a laser light source 1, in which several horizontal cavities 16 are arranged in a star shape around a central emission area 15. In the 17 The laser light source shown also includes optically effective surface layers 31, 32 for influencing the emitted light, for example by increasing or decreasing a reflection at the corresponding interface. Such a laser light source has high power, is compact and leads to a symmetrical emitted light cone, comparable to the light cone of a VCSEL diode.

In 18 is another embodiment similar to that in FIG 10 see example shown. In addition to the edge-emitting laser diodes 1 in the periphery of the mounting level 6, the radiation-emitting device 100 has a surface-emitting laser diode 1' with a vertical cavity (VCSEL diode) arranged on the mounting level 6, which, during operation, directs the light generated in the cavity to the emission direction z decouples. An array of VCSEL diodes is also possible. The VCSEL diode 1 ′ or the VCSEL diode array can be arranged directly and centrally on the mounting plane 6 . As shown, the angular ranges illuminated by the respective laser diodes 1, 1' can overlap and thus contribute to a total angular range θ _x,ges in the horizontal direction x.

In this context shows 19 Schematically the composite beam profile in the far field as a function of the radiation angle ϑ _x in the horizontal direction x and as a function of the radiation angle ϑ _y in the transverse direction y. In this case, the beam profile can be optimized by the optics system 2 . This in 19 composite beam profile shown has a first, from kantene area 41 emanating from emitting laser diodes 1, and a second area 42 emanating from vertically emitting laser diodes 1'. The first beam profile area 41 has a horizontal emission angle θ _x that is greater than the transverse emission angle θ _y , while the beam profile area 42 can be almost symmetrical, ie circular, in relation to both emission angles.

For example, the light cone of edge-emitting laser diodes 1 in the far field can have an opening angle along the fast axis 13 (corresponds to the opening angle C'' after rotation through the light-reflecting optical element 21) of about 120°, and along the slow axis (corresponds to the opening angle ϑ _y ) of reach about 12°. In contrast, the light cone of a VCSEL diode or a VCSEL diode array in the far field can achieve opening angles of about 30°-60° in the horizontal direction x and 30° in the transverse direction y. The use of a VCSEL diode or a VCSEL diode array can therefore be advantageous in order to illuminate obstacles above the road, such as ramps, bridges or garages, in the far field. For example, the VCSEL diode or VCSEL diode array can be turned on or off depending on the situation.

In 20 Another exemplary embodiment of the radiation-emitting device 100 is shown. In contrast to the embodiment according to 18 the vertically emitting VCSEL diode 1 ′, or the VCSEL diode array, is arranged on the same carrier substrate 7 as the edge emitting laser diodes 1 . Advantageously, this reduces alignment requirements and eases assembly. In this case, the edge-emitting laser diodes 1 emit light in the direction of the light-reflecting optical elements 21 located on the mounting plane 6 in the periphery, which deflect the light in the direction of the emission direction z. The light-reflecting optical elements 21 have reflector surfaces 25 which face the respective edge-emitting laser diodes 1 .

21 FIG. 1 shows an exemplary embodiment of a radiation-emitting device 100 with a wide horizontal total emission angle. The radiation-emitting device 100 has at least two edge-emitting laser diodes 1, which are each arranged on a carrier substrate 7 that is tilted with respect to the mounting plane 6. Due to the tilting of the carrier substrates 7, the light emitted by the respective laser diode 1 has a component in the emission direction z, which is why the optical system 2 does not necessarily have to contain a light-reflecting optical element 21 in this case. The laser diodes 1 emit light in the direction of the optical elements 22, 23, which collimate the light in the transverse direction y and spread the light in the horizontal direction x. The optical system 2 forms one or more exit surfaces 29 for the emitted light. For example (not shown), the optical system 2 forms a dome-shaped exit surface, the surface normal of which points in different directions in sections. Alternatively, and as in 21 shown, the optical system 2 forms a plurality of exit surfaces 29 whose surface normals point in different directions. This can mean that at least one exit surface 29 of the optical system is in a position that is tilted relative to the mounting plane 6 . For example and as in 21 shown, an exit surface 29 can be perpendicular to the emission direction of the respective laser diode 1, or perpendicular to a surface of the carrier substrate 7 on which this laser diode 1 is arranged. The optics system 2 can be provided and configured to spread the beam profile of the radiation-emitting device 100 in the horizontal direction x to at least 240°, for example, with the light emitted by the two laser diodes 1 being spread to 120° in each case and comprising one direction , which is perpendicular to the mounting plane 6.

In 22 is a perspective view of the assembly level 6 with two tilted carrier substrates 7 arranged thereon, on each of which an edge-emitting laser diode 1 or a laser diode chip 1 is arranged. The arrangement corresponds to the arrangement in 21 embodiment shown, in which the carrier substrates 7 are arranged one behind the other in the transverse direction y. The emission direction of the two laser diode chips 1 is also indicated.

23 shows a further exemplary embodiment of the radiation-emitting device 100. The radiation-emitting device 100 comprises a mounting plane 6 and a carrier substrate 7 which is arranged centrally on the mounting plane 7 and is plane-parallel to the mounting plane 6. A vertically emitting laser diode 1' is arranged centrally on the carrier substrate 7 during operation, decouples light for the direction of emission z, which is emitted via a first exit surface 29 that is parallel to the mounting plane 6 . Furthermore, 2 edge-emitting laser diodes 1 are arranged on opposite edges of the carrier substrate 7 , which emit light in the direction of two light-reflecting optical elements 21 located on the edge of the mounting plane 6 . From there, the light is reflected in the direction of a second and third exit surface 29 of the optical system 2 . As in the embodiment according to 20 allows the arrangement of the laser light sources 1, 1 'on a common carrier substrate 7 compact and efficient assembly. The deflection of the edge-emitting laser diodes 1 light emitted by means of light-reflecting optical elements 21 enables assembly on a plane-parallel carrier substrate 7, which is also advantageous from a thermal point of view. The realization of a plurality of exit surfaces 29 enables a wide horizontal field of view of the radiation-emitting device 100, for example of approximately 240°.

In 24 shows an example of an angle-dependent intensity distribution I in the far field that can be achieved with the radiation-emitting device described here as a function of the emission angle θ _x in the horizontal direction x and as a function of the emission angle θ _y in the transverse direction y. It can be seen that a uniform spread can be achieved along the horizontal direction x in a wide angular range, which is significantly larger than the opening angle of the beam profile of the laser light source 1. At the same time, collimation along the transverse direction y can be achieved.

In 25 an exemplary embodiment of a measuring system 1000 with a radiation-emitting device 100 as a transmitter unit and a detector unit 200 as a receiver unit is shown, with which, in 25 objects 99 indicated by the dotted elements can be detected. The objects 99 can be, for example, objects or people or other objects that can be examined using light.

The radiation-emitting device 100 of the measuring system 1000 is provided and set up to emit a transmitter signal L during operation, as indicated by the arrows in FIG 25 is indicated. For this purpose, the radiation-emitting device 100 has a laser light source 1 which, during operation, emits light along an emission direction z. Furthermore, the radiation-emitting device 100 has an optical system 2 which is designed to shape an emission characteristic of the radiation-emitting device 100 . The optical system 2 is particularly preferably a non-imaging optical system.

For example, the radiation-emitting device 100 can be configured such that an area with a width B of several 10 m in a horizontal direction x, for example with a width B of at least 20 m or at least 30 m or at least 50 m, at a distance D is illuminated by several 10 m, for example at a distance D of at least 50 m or at least 100 m or at least 200 m. Furthermore, the area illuminated by the transmitter signal L can illuminate a height of several meters in a transversal direction y, for example a height of at least 2 m or at least 5 m.

The directional information “horizontal” and “transverse” preferably refers to such an arrangement of the measuring system 1000 in which the measuring system 1000 and in particular the radiation-emitting device 100 in the measuring system 1000 are aligned relative to the environment for the intended use. For example, when the measurement system 1000 is used in a vehicle, such as a road vehicle, or in a monitoring device, as in connection with FIGS 26 until 28 is shown, the horizontal direction x preferably denotes a direction parallel or at least substantially parallel to the road surface. The transverse direction y, for example in 28 is indicated and which is perpendicular to the horizontal direction, then preferably corresponds to a direction perpendicular or at least substantially perpendicular to the road surface. The emission direction z is preferably perpendicular or essentially perpendicular to the horizontal direction x and to the transverse direction y.

The transmitter signal L can be a light pulse, for example, which is emitted in the form of a single pulse with a specific pulse frequency. Furthermore, instead of an individual pulse, the transmitter signal L can, for example, also have a pulse train, ie a plurality of pulses, and/or a pulse modulated in its amplitude or an amplitude- and/or phase-modulated continuous light beam.

The detector unit 200 is provided and set up to receive a return signal R, which has at least part of the transmitter signal L reflected back from an external object 99 . The return signal R can deviate from the transmitter signal L as a result of the interaction of the transmitter signal L with an object 99, for example with regard to the time profile, a spectral composition, an amplitude and/or a phase. For example, the return signal R can correspond to a transmitter signal L that has been attenuated and/or at least partially frequency-shifted and/or phase-shifted, at least with respect to some spectral components.

The detector unit 200 has at least one detector element 3, for example in the form of a photodiode or a photodiode array. For example, the detector unit 200 can have or be a SPAD array, an APD array or a gated imaging system. Furthermore, the detector unit 200 can have an optical system 4, which is particularly preferably an imaging optical system.

The radiation-emitting device 100 and the detector unit 200 and thus the laser light source 1, the optical system 2, the detector element 3 and the optical system 4 can, as in 25 is indicated accordingly by dashed lines, be arranged in or on one or more housing bodies. In particular, the radiation-emitting device 100 and the detector unit 200 can also be arranged in or on a common housing. In particular, the radiation-emitting device 100 and the detector unit can be arranged on the same mounting plane, or at least on mounting planes that are parallel to one another.

In a method for operating the measurement system 1000, the radiation-emitting device 100 emits at least one light pulse as the transmitter signal L, as described. The detector unit 200 detects the return signal R. For example, the method can be used to determine one or more parameters in relation to the transmitter signal L and/or the return signal R in order to be able to draw conclusions about an object 99 in this way. For example, a time difference between the transmitter signal L and the return signal R and/or a wavelength shift and/or phase shift between the transmitter signal L and the return signal R and/or a spectral change between the transmitter signal L and the return signal R can be determined. One or more state variables in relation to the object 99 can be derived from the one or more parameters determined from the return signal R, for example a distance and/or a speed and/or at least one or more speed components. In particular, multiple objects can be detected simultaneously with an imaging optical system 4 and a detector array as detector element 3 . In order to determine the parameters, the measuring system 1000 can also have an evaluation unit provided and set up for this purpose (not shown). The measurement system 1000 preferably has properties and features of a LIDAR system and is particularly preferably a LIDAR system.

In the 26 until 27 a vehicle 2000 with a measuring system 1000 is indicated. The vehicle 2000 can be, for example, a road vehicle, a rail vehicle, a watercraft or an aircraft. The vehicle 2000 is particularly preferably a motor vehicle, as in 26 and 27 is indicated. In 27 two situations are illustrated in which the vehicle 2000 assumes an elevated or lowered position in the transverse direction y compared to the object 99 . In these cases, the measuring system 1000 integrated into the vehicle 2000, in particular the radiation-emitting device 100 of the measuring system 1000, can be such that additional laser light sources 1 are switched on and the light emitted by them is projected onto the scene via the optical system 2. In this way, the illuminated area can be changed dynamically. For example, a VCSEL diode integrated in the radiation-emitting device or an array of VCSEL diodes can be switched on or off depending on the situation in order to illuminate obstacles above or below the road, such as ramps, bridges or garages, in the far field.

As in 28 As indicated, the measurement system 1000 can be used in a device in the form of a fixed installation, such as the monitoring device 3000 shown. The monitoring device 3000 can have the measuring system 1000 for traffic management, parking lot management, a security application or industrial purposes, for example.

The features and exemplary embodiments described in connection with the figures can be combined with one another according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in connection with the figures can alternatively or additionally have further features in accordance with the description in the general part.

The invention is not limited to these by the description based on the exemplary embodiments. Rather, the invention encompasses every new feature and every combination of features, which in particular includes every combination of features in the patent claims, even if this feature or this combination itself is not explicitly stated in the patent claims or exemplary embodiments.

Reference List

1

laser light source

2

optical system

3

detector element

4

optical system

5

case body

6

mounting level

7

carrier substrate

10

laser emitter unit

11

semiconductor layer sequence

12

active layer

13

fast axis

14

slow axis

15

emission range

16

cavity

17

mirror layer

18

another optical element

21

reflective optical element

22

collimating optical element

23

diverging optical element

25

reflector surface

29

exit surface

31, 32

optically effective surface layer

41, 42

beam profile

100

Radiation Emitting Device

200

detector unit

1000

measuring system

2000

vehicle

3000

monitoring device

B

Broad

D

distance

L

transmitter signal

R

return signal

x

horizontal direction

y

transverse direction

e.g

beam direction

ϑx, ϑy

beam angle

QUOTES INCLUDED IN DESCRIPTION

This list of documents cited by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent Literature Cited

• DE 102007062050 B4 [0050]
• US 2009/0097519 A1 [0050]

Claims (20)

Radiation-emitting device (100), which is arranged on a mounting plane (6) extending in lateral directions (x, y) and is intended to emit light along an emission direction (z), the emission direction (z) being a direction perpendicular to the Mounting level (6), having at least one laser light source (1), and a non-imaging optical system (2) arranged downstream of the at least one laser light source (1) and comprising at least one optical element (21, 22, 23) for shaping a beam profile of the radiation emitting device (100) along the lateral directions (x,y). Radiation-emitting device (100) after claim 1 , wherein the at least one laser light source (1) is designed as a laser bar or laser matrix. Radiation-emitting device (100) after claim 1 or 2 wherein the at least one laser light source (1) comprises an edge-emitting laser diode which is arranged on a carrier substrate (7) which is plane-parallel or tilted to the mounting plane (6). Radiation-emitting device (100) according to one of the preceding claims, wherein the optical system (2) has a light-reflecting optical element (21) with at least one reflector surface (25), which is provided and designed to deflect the light to the emission direction (z) and aligning a fast axis (13) of the beam profile along a horizontal direction (x). Radiation-emitting device (100) after claim 4 , The reflector surface (25) of the light-reflecting optical element (21) being designed as a curved and/or faceted reflector surface (25). Radiation-emitting device (100) according to one of the preceding claims, wherein the optical system (2) comprises a light-collimating optical element (22) which is intended and configured to bring about collimation of the light along a transverse direction (y). Radiation-emitting device (100) according to one of the preceding claims, wherein the optics system (2) has a light-diverging optics element (23) which is provided and designed to spread the light along the horizontal direction (x). Radiation-emitting device (100) according to one of the preceding claims, wherein the light-diverging optical element (23) of the optical system (2) is designed as a microlens array which has a plurality of microlenses. Radiation-emitting device (100) according to one of the preceding claims, wherein at least two optical elements (21, 22, 23) of the optical system (2) are formed in one piece. Radiation-emitting device (100) according to one of the preceding claims, further comprising a housing body (5), wherein the housing body (5) with at least one optical element (21, 22, 23) of the optical system (2) and the mounting plane (6) has a hermetically encloses dense interior space in which the laser light source (1) is arranged. Radiation-emitting device (100) according to one of the preceding claims, wherein the laser light source (1) comprises at least one on the mounting plane (6) arranged vertically emitting laser diode with a horizontal cavity (16), which during operation via an integrated mirror layer (17) in light generated by the cavity to the emission direction (z). Radiation-emitting device after claim 11 wherein the at least one vertically emitting laser diode with a horizontal cavity (16) has a plurality of emission regions (15), starting from which light is coupled out along the direction of emission (z). Radiation-emitting device (100) after claim 11 wherein the at least one vertically emitting laser diode has a plurality of horizontal cavities (16) which are arranged in pairs opposite one another around a central emission region (15). Radiation-emitting device (100) according to any one of Claims 11 until 13 , each of the at least one vertically emitting laser diode being assigned a further optical element (18) which is provided and designed to deflect the light coupled out from the respective laser diode to the emission direction (z) along the horizontal direction (x). Radiation-emitting device (100) after Claim 14 , wherein the further optical element is a prism, a diffraction grating, a photonic crystal, or an integrated phase modulation structure. Radiation-emitting device (100) according to any one of the preceding claims, wherein the at least one laser light source (1) comprises a vertical-cavity surface-emitting laser diode arranged on the mounting plane, the decouples the light generated in the cavity to the emission direction (z) during operation. Radiation-emitting device (100) according to one of the preceding claims, wherein the optical system (2) forms a dome-shaped exit surface (29) for the emitted light, or has a plurality of exit surfaces (29) whose surface normals point in different directions. Measuring system (1000) having a radiation-emitting device (100) according to one of the preceding claims and a detector unit (200), the detector unit (200) being arranged on the mounting plane (6) or on a further mounting plane aligned essentially parallel to the mounting plane (6). and is intended to detect light emitted by the radiation-emitting device and reflected to the detector unit (200). Measuring system (1000) according to Claim 18 , wherein the laser light source (1) and the detector unit (200) are arranged in a common housing body (5). Vehicle with a measuring system (1000) according to one of claims 18 and 19 .

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