DE102021113508A1 - Magnetoresistives Element und Herstellungsverfahren - Google Patents

Magnetoresistives Element und Herstellungsverfahren Download PDF

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Publication number
DE102021113508A1
DE102021113508A1 DE102021113508.7A DE102021113508A DE102021113508A1 DE 102021113508 A1 DE102021113508 A1 DE 102021113508A1 DE 102021113508 A DE102021113508 A DE 102021113508A DE 102021113508 A1 DE102021113508 A1 DE 102021113508A1
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DE
Germany
Prior art keywords
layer
ferromagnetic
magnetic
layers
free layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102021113508.7A
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German (de)
English (en)
Inventor
Jochen Schmitt
Enno Lage
Jan KUBIK
Onur Necdet Urs
Md Tarequzzaman
Cian Padraic O Dalaigh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices International ULC
Original Assignee
Analog Devices International ULC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/317,675 external-priority patent/US20210372820A1/en
Application filed by Analog Devices International ULC filed Critical Analog Devices International ULC
Publication of DE102021113508A1 publication Critical patent/DE102021113508A1/de
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
    • G01R33/1292—Measuring domain wall position or domain wall motion

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
DE102021113508.7A 2020-05-26 2021-05-26 Magnetoresistives Element und Herstellungsverfahren Pending DE102021113508A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063030092P 2020-05-26 2020-05-26
US63/030,092 2020-05-26
US17/317,675 2021-05-11
US17/317,675 US20210372820A1 (en) 2020-05-26 2021-05-11 Magnetoresistive element and method of manufacture

Publications (1)

Publication Number Publication Date
DE102021113508A1 true DE102021113508A1 (de) 2021-12-02

Family

ID=76637684

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102021113508.7A Pending DE102021113508A1 (de) 2020-05-26 2021-05-26 Magnetoresistives Element und Herstellungsverfahren

Country Status (4)

Country Link
JP (1) JP2021190710A (zh)
CN (1) CN215342657U (zh)
DE (1) DE102021113508A1 (zh)
GB (1) GB2601390B (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170261345A1 (en) 2016-03-08 2017-09-14 Analog Devices Global Multiturn sensor arrangement and readout

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6466417B1 (en) * 1999-11-02 2002-10-15 International Business Machines Corporation Laminated free layer structure for a spin valve sensor
US9040178B2 (en) * 2008-09-22 2015-05-26 Headway Technologies, Inc. TMR device with novel free layer structure
US9831419B2 (en) * 2015-07-13 2017-11-28 Western Digital Technologies, Inc. Magnetoresistive device with laminate insertion layer in the free layer
WO2019108381A1 (en) * 2017-11-29 2019-06-06 Everspin Technologies, Inc. Magnetoresistive stacks

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170261345A1 (en) 2016-03-08 2017-09-14 Analog Devices Global Multiturn sensor arrangement and readout

Also Published As

Publication number Publication date
GB2601390A (en) 2022-06-01
GB202107355D0 (en) 2021-07-07
CN215342657U (zh) 2021-12-28
GB2601390B (en) 2023-01-18
JP2021190710A (ja) 2021-12-13

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Ipc: H10N0050100000