DE102020108051A8 - Magnetische Speichervorrichtungen und Verfahren zu ihrer Herstellung - Google Patents

Magnetische Speichervorrichtungen und Verfahren zu ihrer Herstellung Download PDF

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Publication number
DE102020108051A8
DE102020108051A8 DE102020108051.4A DE102020108051A DE102020108051A8 DE 102020108051 A8 DE102020108051 A8 DE 102020108051A8 DE 102020108051 A DE102020108051 A DE 102020108051A DE 102020108051 A8 DE102020108051 A8 DE 102020108051A8
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DE
Germany
Prior art keywords
making
methods
storage devices
magnetic storage
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102020108051.4A
Other languages
English (en)
Other versions
DE102020108051A1 (de
Inventor
Daniel Ouellette
Christopher Wiegand
Justin BROCKMAN
Tofizur RAHMAN
Oleg Golonzka
Angeline SMITH
Andrew Smith
James Pellegren
Michael Robinson
Huiying Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE102020108051A1 publication Critical patent/DE102020108051A1/de
Publication of DE102020108051A8 publication Critical patent/DE102020108051A8/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
DE102020108051.4A 2019-03-27 2020-03-24 Magnetische Speichervorrichtungen und Verfahren zu ihrer Herstellung Pending DE102020108051A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/367,136 2019-03-27
US16/367,136 US11737368B2 (en) 2019-03-27 2019-03-27 Magnetic memory devices and methods of fabrication

Publications (2)

Publication Number Publication Date
DE102020108051A1 DE102020108051A1 (de) 2020-10-01
DE102020108051A8 true DE102020108051A8 (de) 2020-12-31

Family

ID=72604969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102020108051.4A Pending DE102020108051A1 (de) 2019-03-27 2020-03-24 Magnetische Speichervorrichtungen und Verfahren zu ihrer Herstellung

Country Status (2)

Country Link
US (1) US11737368B2 (de)
DE (1) DE102020108051A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11502188B2 (en) 2018-06-14 2022-11-15 Intel Corporation Apparatus and method for boosting signal in magnetoelectric spin orbit logic
US11476412B2 (en) 2018-06-19 2022-10-18 Intel Corporation Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
US11616192B2 (en) 2018-06-29 2023-03-28 Intel Corporation Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
US11737368B2 (en) * 2019-03-27 2023-08-22 Intel Corporation Magnetic memory devices and methods of fabrication
US11063088B2 (en) * 2019-12-06 2021-07-13 Intel Corporation Magnetic memory devices and methods of fabrication
KR20210075467A (ko) * 2019-12-13 2021-06-23 에스케이하이닉스 주식회사 전자 장치
US11302372B2 (en) * 2020-02-07 2022-04-12 International Business Machines Corporation MTJ stack containing a top magnetic pinned layer having strong perpendicular magnetic anisotropy
JP2022049406A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 磁気記憶装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843930B2 (ja) * 2004-10-27 2011-12-21 富士電機株式会社 半導体装置およびその製造方法
US7973349B2 (en) 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
KR101849677B1 (ko) * 2011-05-19 2018-04-19 삼성전자주식회사 자기 터널 접합 소자
US8786039B2 (en) * 2012-12-20 2014-07-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
WO2017052631A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Psttm device with multi-layered filter stack
CN109155360A (zh) * 2016-02-05 2019-01-04 汉阳大学校产学协力团 存储器件
US20170309813A1 (en) * 2016-04-26 2017-10-26 Globalfoundries Singapore Pte. Ltd. Integrated circuits with magnetic tunnel junctions and methods for producing the same
JP7098606B2 (ja) * 2016-09-08 2022-07-11 モジュメタル インコーポレイテッド ワークピース上に積層コーティングを提供するためのプロセス、およびそれから製造される物品
US11192102B2 (en) 2017-02-28 2021-12-07 Lmsera Inc. Microfluidic device
EP3460811B1 (de) 2017-09-20 2020-06-17 IMEC vzw Magnetische schichtstruktur für magnettunnelbauelement
FR3077917B1 (fr) * 2018-02-15 2022-02-04 Commissariat Energie Atomique Empilement magnetique, jonction tunnel, point memoire et capteur comportant un tel empilement
US10468456B2 (en) 2018-02-17 2019-11-05 Globalfoundries Inc. Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for differential bit operation and methods for fabricating the same
US10516096B2 (en) * 2018-03-28 2019-12-24 Globalfoundries Singapore Pte. Ltd. Magnetic random access memory structures, integrated circuits, and methods for fabricating the same
US11346899B2 (en) 2018-07-06 2022-05-31 Infineon Technologies Ag Magnetoresistive sensor with reduced stress sensitivity
US11476408B2 (en) * 2018-09-27 2022-10-18 Intel Corporation Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication
US20200313074A1 (en) * 2019-03-27 2020-10-01 Intel Corporation Magnetic memory devices and methods of fabrication
US11737368B2 (en) * 2019-03-27 2023-08-22 Intel Corporation Magnetic memory devices and methods of fabrication
US10943950B2 (en) * 2019-03-27 2021-03-09 Intel Corporation Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication
US11557629B2 (en) * 2019-03-27 2023-01-17 Intel Corporation Spin orbit memory devices with reduced magnetic moment and methods of fabrication

Also Published As

Publication number Publication date
US20200313084A1 (en) 2020-10-01
US11737368B2 (en) 2023-08-22
DE102020108051A1 (de) 2020-10-01

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R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0043080000

Ipc: H10N0050100000