DE102018210613A1 - Contact system with a crack detection device - Google Patents
Contact system with a crack detection device Download PDFInfo
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- DE102018210613A1 DE102018210613A1 DE102018210613.4A DE102018210613A DE102018210613A1 DE 102018210613 A1 DE102018210613 A1 DE 102018210613A1 DE 102018210613 A DE102018210613 A DE 102018210613A DE 102018210613 A1 DE102018210613 A1 DE 102018210613A1
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- crack detection
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Abstract
Die Erfindung betrifft ein Kontaktsystem. Das Kontaktsystem weist einen insbesondere keramisch ausgebildeten Schaltungsträger und ein Halbleiterbauteil auf. Der Schaltungsträger weist wenigstens eine oder nur eine elektrisch isolierende Keramikschicht und wenigstens eine elektrisch leitfähige Schicht, insbesondere Kupferschicht, auf. Erfindungsgemäß ist das Halbleiterbauteil, insbesondere ein Leistungshalbleiter, mit der elektrisch leitfähigen Schicht elektrisch oder zusätzlich wärmeleitfähig verbunden. Der Schaltungsträger weist wenigstens eine oder nur eine zu dem Halbleiterbauteil gegenüberliegende weitere elektrisch leitfähige Schicht auf. Das Kontaktsystem weist eine Risserfassungsvorrichtung auf, welche ausgebildet ist, einen Riss in der Keramikschicht im Bereich des Halbleiterbauteils insbesondere mittels Impedanzerfassung zu erfassen. Die Risserfassungsvorrichtung weist wenigstens zwei oder nur zwei Sensorelektroden auf, welche die Keramikschicht zwischeneinander einschließen. Bevorzugt ist eine Sensorelektrode durch die das Halbleiterbauteil kontaktierende elektrisch leitfähige Schicht gebildet und die weitere Sensorelektrode ist durch die gegenüberliegende elektrisch leitfähige Schicht, insbesondere Rückseitenschicht des Schaltungsträgers gebildet.The invention relates to a contact system. The contact system has a circuit carrier, in particular a ceramic one, and a semiconductor component. The circuit carrier has at least one or only one electrically insulating ceramic layer and at least one electrically conductive layer, in particular a copper layer. According to the invention, the semiconductor component, in particular a power semiconductor, is electrically or additionally thermally conductively connected to the electrically conductive layer. The circuit carrier has at least one or only one further electrically conductive layer opposite the semiconductor component. The contact system has a crack detection device which is designed to detect a crack in the ceramic layer in the region of the semiconductor component, in particular by means of impedance detection. The crack detection device has at least two or only two sensor electrodes which enclose the ceramic layer between one another. A sensor electrode is preferably formed by the electrically conductive layer contacting the semiconductor component and the further sensor electrode is formed by the opposite electrically conductive layer, in particular the back layer of the circuit carrier.
Description
Stand der TechnikState of the art
Die Erfindung betrifft ein Kontaktsystem. Das Kontaktsystem weist einen insbesondere keramisch ausgebildeten Schaltungsträger, insbesondere einen AMB-Schaltungsträger oder DCB-Schaltungsträger und ein Halbleiterbauteil auf. Der Schaltungsträger weist wenigstens eine oder nur eine elektrisch isolierende Keramikschicht und wenigstens eine elektrisch leitfähige Schicht, insbesondere Kupferschicht, auf.The invention relates to a contact system. The contact system has an especially ceramic circuit carrier, in particular an AMB circuit carrier or DCB circuit carrier and a semiconductor component. The circuit carrier has at least one or only one electrically insulating ceramic layer and at least one electrically conductive layer, in particular a copper layer.
Aus der
Offenbarung der ErfindungDisclosure of the invention
Erfindungsgemäß ist das Halbleiterbauteil, insbesondere ein Leistungshalbleiter, mit der elektrisch leitfähigen Schicht elektrisch oder zusätzlich wärmeleitfähig verbunden, insbesondere lötverbunden. Der Schaltungsträger weist wenigstens eine oder nur eine zu dem Halbleiterbauteil gegenüberliegende weitere elektrisch leitfähige Schicht auf. Das Kontaktsystem weist eine Risserfassungsvorrichtung auf, welche ausgebildet ist, einen Riss in der Keramikschicht im Bereich des Halbleiterbauteils insbesondere mittels Impedanzerfassung, beispielsweise kapazitiv und/oder induktiv, zu erfassen. Die Risserfassungsvorrichtung weist wenigstens zwei oder nur zwei Sensorelektroden auf, welche die Keramikschicht zwischeneinander einschließen. Bevorzugt ist eine Sensorelektrode durch die das Halbleiterbauteil kontaktierende elektrisch leitfähige Schicht gebildet und die weitere Sensorelektrode ist durch die gegenüberliegende elektrisch leitfähige Schicht, insbesondere Rückseitenschicht des Schaltungsträgers gebildet.According to the invention, the semiconductor component, in particular a power semiconductor, is electrically or additionally thermally conductively connected to the electrically conductive layer, in particular solder-connected. The circuit carrier has at least one or only one further electrically conductive layer opposite the semiconductor component. The contact system has a crack detection device, which is designed to detect a crack in the ceramic layer in the region of the semiconductor component, in particular by means of impedance detection, for example capacitively and / or inductively. The crack detection device has at least two or only two sensor electrodes which enclose the ceramic layer between one another. A sensor electrode is preferably formed by the electrically conductive layer contacting the semiconductor component and the further sensor electrode is formed by the opposite electrically conductive layer, in particular the back layer of the circuit carrier.
Mittels des so gebildeten Kontaktsystems kann vorteilhaft ein Riss in dem keramischen Schaltungsträger erfasst werden, wobei vorteilhaft an dem keramischen Schaltungsträger vorhandene elektrisch leitfähige Schichten, beispielsweise eine Rückseitenschicht, und/oder eine mit einem elektronischen Bauteil verbundene Leiterbahn, als Sensorelektrode genutzt werden kann. Es wurde nämlich erkannt, dass Risse in keramischen Schaltungsträgern aufgrund von Wärmeausdehnung, insbesondere im Bereich eines Leistungshalbleiters oder eines wärmeerzeugenden Halbleiters insbesondere im Bereich von äußeren Begrenzungen des Leistungshalbleiters erzeugt werden, wobei die Risse sich in der Keramikschicht des Schaltungsträgers weiter ausbreiten und letztlich zu einer Minderung oder Unterbrechung der Wärmeleitung oder einer elektrischen Unterbrechung einer Leiterbahn, die mit der Keramikschicht verbunden ist, führen können.A crack in the ceramic circuit carrier can advantageously be detected by means of the contact system formed in this way, it being possible advantageously to use electrically conductive layers present on the ceramic circuit carrier, for example a back layer, and / or a conductor track connected to an electronic component, as the sensor electrode. It has been recognized that cracks are generated in ceramic circuit carriers due to thermal expansion, in particular in the area of a power semiconductor or a heat-generating semiconductor, in particular in the area of external boundaries of the power semiconductor, the cracks spreading further in the ceramic layer of the circuit substrate and ultimately reducing it or interruption in heat conduction or an electrical interruption in a conductor track which is connected to the ceramic layer.
Bevorzugt bedeckt die weitere elektrisch leitfähige Schicht, insbesondere Rückseitenschicht, die Keramikschicht vollflächig. Dadurch können sich vorteilhaft elektrische Feldlinien von der elektrisch leitfähigen Schicht auf der bestückten Schaltungsträgerseite auch weit neben einer Leiterbahn auf der Bestückten Seite zu der Rückseitenschicht erstrecken und so auch Risse neben der Leiterbahn durch Kapazitätsbildung erfassen.The further electrically conductive layer, in particular the back layer, preferably covers the entire surface of the ceramic layer. As a result, electrical field lines can advantageously extend from the electrically conductive layer on the populated circuit carrier side far from a conductor track on the populated side to the rear side layer and thus also detect cracks next to the conductor track through the formation of capacitance.
In einer bevorzugten Ausführungsform ist das Halbleiterbauteil ein Halbleiterschalter, insbesondere ein gehäuseloser Halbleiterschalter, auch Bare-Die genannt. Bevorzugt ist ein elektrischer Schaltstreckenanschluss des Halbleiterschalters mit der elektrisch leitfähigen Schicht verbunden, insbesondere lötverbunden oder sinterverbunden. Vorteilhaft kann die mit dem Halbleiterbauteil verbundene elektrisch leitfähige Schicht, insbesondere Leiterbahn, als Sensorelektrode dienen, sodass auf diese Weise Risse im Bereich des Leistungshalbleiterbauteils in der Keramikschicht erfasst werden können.In a preferred embodiment, the semiconductor component is a semiconductor switch, in particular a semiconductor switch without a housing, also called a bare die. An electrical switching path connection of the semiconductor switch is preferably connected to the electrically conductive layer, in particular solder-bonded or sinter-bonded. The electrically conductive layer, in particular the conductor track, connected to the semiconductor component can advantageously serve as a sensor electrode, so that cracks in the region of the power semiconductor component can be detected in the ceramic layer.
In einer bevorzugten Ausführungsform weist das Kontaktsystem eine elektrisch leitfähige Wärmesenke auf, welche zu dem Halbleiterbauteil gegenüberliegend mit der gegenüberliegenden elektrisch leitfähigen Schicht elektrisch und wärmeleitfähig verbunden ist. Die weitere Elektrode ist bevorzugt wenigstens teilweise durch die Wärmesenke oder zusätzlich durch die gegenüberliegende elektrisch leitfähige Schicht gebildet. Vorteilhaft kann die gegenüberliegende Elektrode so durch die Wärmesenke gebildet sein, welche so als Sensorelektrode mitgenutzt werden kann und so eine Doppelfunktion aufweist. Die Wärmesenke ist beispielsweise durch eine Metallschicht, einen Metallblock oder einen Kühlkörper gebildet.In a preferred embodiment, the contact system has an electrically conductive heat sink which is electrically and thermally conductively connected to the opposite electrically conductive layer opposite the semiconductor component. The further electrode is preferably formed at least partially by the heat sink or additionally by the opposite electrically conductive layer. The opposite electrode can advantageously be formed by the heat sink, which can also be used as a sensor electrode and thus has a double function. The heat sink is formed, for example, by a metal layer, a metal block or a heat sink.
In einer bevorzugten Ausführungsvariante weist die Risserfassungsvorrichtung eine Verarbeitungseinheit auf, welche jeweils einen Eingang für die Sensorelektroden aufweist, und welcher mit dem Schaltungsträger verbunden ist. Die Verarbeitungseinheit ist bevorzugt ausgebildet, ein Risserfassungssignal zum Erfassen eines Risses in der Keramikschicht zu erzeugen und dieses an die Sensorelektroden zu senden. Das Kontaktsystem kann so vorteilhaft kompakt ausgebildet sein.In a preferred embodiment variant, the crack detection device has a processing unit which each has an input for the sensor electrodes and which is connected to the circuit carrier. The processing unit is preferably designed to generate a crack detection signal for detecting a crack in the ceramic layer and to send this to the sensor electrodes. The contact system can thus be advantageously compact.
Bevorzugt ist die Risserfassungsvorrichtung ausgebildet, in Abhängigkeit des Risserfassungssignals eine Impedanz, bevorzugt eine Kapazität und/oder einen dielektrischen Verlust der Keramikschicht zu ermitteln. Vorteilhaft kann so unabhängig von einem Betrieb des Halbleiterbauteils ein Riss in dem Schaltungsträger erfasst werden.The crack detection device is preferably designed to determine an impedance, preferably a capacitance and / or a dielectric loss of the ceramic layer as a function of the crack detection signal. A crack in the circuit carrier can thus advantageously be detected independently of an operation of the semiconductor component.
In einer bevorzugten Ausführungsform weist das Kontaktsystem einen Treiber auf, welcher mit einem Steueranschluss des Halbleiterbauteils, insbesondere Halbleiterschalter, verbunden ist. Der Treiber ist ausgebildet, das Halbleiterbauteil, insbesondere Halbleiterschalter, anzusteuern. Wenigstens ein Teil der Risserfassungsvorrichtung, insbesondere eine eine Risserfassungseinheit bildende Verarbeitungseinheit und der Treiber sind bevorzugt jeweils Bestandteil eines integrierten Schaltkreises. Die Risserfassungseinheit kann so vorteilhaft gemeinsam mit dem Treiber in einem integrierten Schaltkreis, insbesondere ASIC (ASIC = Application-Specific-Integrated-Circuit) oder FPGA (FPGA = Field-Programmable-Gate-Array) verwirklicht sein. Vorteilhaft kann das Kontaktsystem so kompakt und aufwandsgünstig bereitgestellt werden.In a preferred embodiment, the contact system has a driver which is associated with a control connection of the semiconductor component, in particular semiconductor switch, is connected. The driver is designed to control the semiconductor component, in particular semiconductor switches. At least part of the crack detection device, in particular a processing unit forming a crack detection unit and the driver are preferably each part of an integrated circuit. The crack detection unit can thus advantageously be implemented together with the driver in an integrated circuit, in particular ASIC (ASIC = Application-Specific-Integrated-Circuit) or FPGA (FPGA = Field Programmable Gate Array). The contact system can advantageously be provided in a compact and inexpensive manner.
In einer bevorzugten Ausführungsform weist die Risserfassungsvorrichtung einen Oszillator auf, welcher ausgebildet ist, das Risserfassungssignal zu erzeugen und die Sensorelektroden mit dem Risserfassungssignal zu beaufschlagen. Der Oszillator ist in einer vorteilhaften Ausführungsvariante durch einen Pulsweitenmodulator gebildet, welcher ausgebildet ist, pulsweitenmodulierte Steuersignale zum Schalten des Halbleiterschalters zu erzeugen und an den Treiber zu senden.In a preferred embodiment, the crack detection device has an oscillator which is designed to generate the crack detection signal and to apply the crack detection signal to the sensor electrodes. In an advantageous embodiment variant, the oscillator is formed by a pulse width modulator, which is designed to generate pulse width modulated control signals for switching the semiconductor switch and to send them to the driver.
Die Verarbeitungseinheit ist bevorzugt ausgebildet, insbesondere in Abhängigkeit einer Frequenzverstimmung des Risserfassungssignals, eine Impedanz der Keramikschicht, insbesondere umfassend eine Kapazität und/oder dielektrische Verluste, zu erfassen und in Abhängigkeit der Impedanz ein einen Riss repräsentierendes Risssignal zu erzeugen und auszugeben. Vorteilhaft kann das Risserfassungssignal so auf einfache Weise erzeugt werden. Bevorzugt ist der Oszillator Bestandteil der Verarbeitungseinheit.The processing unit is preferably designed, in particular depending on a frequency detuning of the crack detection signal, to detect an impedance of the ceramic layer, in particular comprising a capacitance and / or dielectric losses, and to generate and output a crack signal representing a crack as a function of the impedance. The crack detection signal can thus advantageously be generated in a simple manner. The oscillator is preferably part of the processing unit.
Die Erfindung betrifft auch eine Steuereinheit für ein Kraftfahrzeug, insbesondere mit einem Kontaktsystem gemäß der vorbeschriebenen Art.The invention also relates to a control unit for a motor vehicle, in particular with a contact system according to the type described above.
In einer bevorzugten Ausführungsform ist die Risserfassungsvorrichtung, insbesondere die Verarbeitungseinheit, ausgebildet, das Risserfassungssignal bei abgeschaltetem Halbleiterbauteil zu erzeugen. Vorteilhaft kann so der Betrieb einer Schaltungsanordnung, welche das Halbleiterbauteil umfasst, nicht durch die Risserfassungsmessung gestört werden.In a preferred embodiment, the crack detection device, in particular the processing unit, is designed to generate the crack detection signal when the semiconductor component is switched off. The operation of a circuit arrangement, which comprises the semiconductor component, can advantageously not be disturbed by the crack detection measurement.
In einer bevorzugten Ausführungsform ist die Risserfassungsvorrichtung ausgebildet, das Risserfassungssignal, insbesondere innerhalb eines Diagnosezeitintervalls, zeitlich vor einem Fahrbetrieb oder zeitlich nach einem Beenden des Fahrbetriebs durch die Steuereinheit zu erzeugen. Auf diese Weise kann vorteilhaft ein Diagnosebetrieb vor einem Fahrtantritt oder nach einem Beenden einer Fahrt erfolgen.In a preferred embodiment, the crack detection device is designed to generate the crack detection signal, in particular within a diagnostic time interval, before the driving operation or after the driving operation has ended by the control unit. In this way, a diagnostic operation can advantageously take place before starting a journey or after ending a journey.
Bevorzugt weist die Steuereinheit einen Inverter zum Bestromen einer elektrischen Maschine auf, weiter bevorzugt weist der Inverter wenigstens eine Halbleiterschalter-Halbbrücke, oder für jede Phase wenigstens eine Halbleiterschalter-Halbbrücke auf. Der Halbleiterschalter ist bevorzugt ein Halbleiterschalter der Halbleiterschalter-Halbbrücke. Vorteilhaft kann der Inverter so auf Rissfreiheit geprüft werden.The control unit preferably has an inverter for energizing an electrical machine, more preferably the inverter has at least one semiconductor switch half-bridge, or at least one semiconductor switch half-bridge for each phase. The semiconductor switch is preferably a semiconductor switch of the semiconductor switch half-bridge. The inverter can advantageously be checked for freedom from cracks.
Die Erfindung betrifft auch eine Servolenkung für ein Kraftfahrzeug oder ein Elektrofahrzeug mit einer Steuereinheit gemäß der vorbeschriebenen Art. Die Servolenkung weist eine elektrische Maschine zur Lenkunterstützung auf, wobei die Steuereinheit zum Bestromen der elektrischen Maschine ausgebildet ist. Weiter bevorzugt ist die elektrische Maschine zum Erzeugen eines magnetischen Drehfeldes zum Drehbewegen eines Rotors der elektrischen Maschine ausgebildet.The invention also relates to a power steering system for a motor vehicle or an electric vehicle with a control unit according to the type described above. The power steering system has an electrical machine for steering assistance, the control unit being designed to energize the electrical machine. The electrical machine is further preferably designed to generate a magnetic rotating field for rotating a rotor of the electrical machine.
Die Erfindung wird nun im Folgenden anhand von Figuren und weiteren Ausführungsbeispielen beschrieben. Weitere vorteilhafte Ausführungsvarianten ergeben sich aus einer Kombination der in den Figuren beschriebenen und in den abhängigen Ansprüchen beschriebenen Merkmalen.
-
1 zeigt ein Ausführungsbeispiel für ein Kontaktsystem, bei dem eine Risserfassungsvorrichtung mit einem Schaltungsträger verbunden und ausgebildet ist, einen Riss in einer Keramikschicht des Schaltungsträgers zu erfassen; -
2 zeigt ein Ausführungsbeispiel für eine Risserfassungsvorrichtung.
-
1 shows an embodiment of a contact system in which a crack detection device is connected to a circuit carrier and designed to detect a crack in a ceramic layer of the circuit carrier; -
2 shows an embodiment of a crack detection device.
Das Kontaktsystem
Das Kontaktsystem
Der Halbleiterschalter
Die Verarbeitungseinheit
In einer anderen, nicht dargestellten Ausführungsform kann die Risserfassungseinheit
Die Keramikschicht
Die elektrisch leitfähige Schicht
Das Kontaktsystem
Die Risserfassungseinheit
Die Risserfassungseinheit
Eine Steuereinheit eines Fahrzeugs, die mit einem Inverter mit der Kontaktanordnung verbunden ist, kann in Abhängigkeit des Risssignals ein Fehlersignal erzeugen und ausgangsseitig ausgeben. Somit kann ein Defekt in einer Elektronik des Fahrzeugs frühzeitig erkannt werden, bevor weitere Folgeschäden, beispielsweise ein Wärmeschaden durch behinderte Wärmeabfuhr durch Ausbreitung des Risses eintreten können.A control unit of a vehicle, which is connected to the contact arrangement by an inverter, can generate an error signal as a function of the crack signal and output it on the output side. A defect in an electronic system of the vehicle can thus be detected early on before further consequential damage, for example thermal damage due to disabled heat dissipation due to the crack spreading, can occur.
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of documents listed by the applicant has been generated automatically and is only included for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturPatent literature cited
- DE 69732445 T2 [0002]DE 69732445 T2 [0002]
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Citations (1)
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DE69732445T2 (en) | 1996-05-09 | 2006-04-27 | Ngk Insulators, Ltd., Nagoya | Method for detecting cracks in ceramic substrates |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE69732445T2 (en) | 1996-05-09 | 2006-04-27 | Ngk Insulators, Ltd., Nagoya | Method for detecting cracks in ceramic substrates |
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