DE102018128659A1 - High-frequency module with connection interface - Google Patents

Abstract

A high-frequency assembly is described which can be used, for example, in communication satellites. The high-frequency assembly contains an electronic unit (45) and a housing (37). The housing at least partially surrounds the electronic unit and the electronic unit (45) is at least partially arranged in an interior (46) of the housing. An inner connection (41) is arranged on the housing and is coupled to the electronic unit (45) in such a way that electrical signals can be transmitted between the electronic unit (45) and the inner connection (41). The inner connection (41) is designed in one piece with at least part of the housing (37). Thereby, a thermomechanical load on the electronic unit can be reduced.

Description

Field of the Invention

The present invention relates to radio frequency technology. In particular, the invention relates to a high-frequency module with a connection interface. The invention further relates to a satellite with such a high-frequency assembly, the high-frequency assembly being able to be used, for example, as part of a communication device or a data transmission link, in particular a satellite transmission link or a satellite radio transmission link.

Background of the Invention

High-frequency technology systems are used to transmit signals and data from a transmitter to a receiver. High-frequency technology is preferred when data has to be transmitted over a large distance (up to several hundred or several thousand kilometers).

Before signals are transferred to the air interface (e.g. antenna), they may require processing or processing, for example. Radio frequency technology is used, for example, on communication satellites to amplify, combine and filter communication signals. A high-frequency system often consists of individual modules (low-noise amplifiers, also known as low noise amplifiers, LNAs, filters, couplers, isolators, preamplifiers, power amplifiers, etc.) which are connected to one another.

Interfaces are provided between these modules in order to establish a mechanical and electrical coupling between the modules. The interfaces are designed from various points of view, for example in order to minimize the electrical losses and / or to design the mechanical strength of the interface in accordance with specifications.

EP 2 775 612 A1 and US 9,530,604 B2 describe a signal transmission unit which is used in the radio frequency range and is used in particular in a communication satellite.

Summary of the invention

It can be regarded as an object of the invention to design a connection interface for a high-frequency assembly in such a way that an assembly process of the high-frequency assembly is simplified. The connection interface can be a high-frequency interface, for example an output interface or input interface.

This object is achieved by the subject matter of the independent claim. Further embodiments result from the dependent claims and from the following description.

According to one aspect, a high-frequency assembly with an electronic unit and a housing is specified. The housing at least partially surrounds the electronic unit and the electronic unit is at least partially arranged in an interior of the housing. The housing has an inner connection which is coupled to the electronic unit in such a way that electrical signals can be transmitted between the electronic unit and the inner connection. The inner connection is designed in one piece with at least a part of the housing, such as a bottom wall or side wall.

In particular, a signal output or a signal input of the electronic unit is connected to the inner connection. A signal output of the electronic unit provides, for example, a useful signal, which is output by the electronic unit as a result of at least one processing step and transmitted to subsequent units (e.g. an antenna). If the connection of the electronic unit is used as a signal input, this receives a signal.

The electronic unit can be a signal source or a signal sink. For example, the electronic unit can have a plurality of interfaces, one interface of the electronic unit being coupled to an inner connection of the housing. For this purpose, the housing can have several internal connections. Furthermore, an interface of the electronic unit can then be designed as a receiving interface and another interface as a transmitting interface, so that the electronic unit transmits or receives at the same time via different interfaces. In this case, there are separate send / receive channels. However, it is also conceivable that an interface of the electronic unit in time duplex mode is operated in succession either as a transmission interface or as a reception interface.

The entire housing does not have to be in one piece, but the internal connection to which the electronic unit is routed for signaling purposes is part of the housing, i.e. the inner connection is designed in one piece with this part of the housing. For example, the inner connection can be part of a housing trough or a housing cover.

The construction described here has the advantage that it greatly simplifies an assembly process for the high-frequency assembly. For example, the signal from the electronic unit does not have to be routed outwards or inwards through the housing wall by means of a coaxial line. Instead, the useful signal from the output of the electronic unit is routed directly to the inner connection as part of the housing and passed on via the housing, or vice versa.

The high-frequency assembly enables the electronic unit and the connection connected to the electronic unit to be mechanically decoupled from the elements located outside the housing.

The inner connection can contain a signal path that is milled into the housing, in particular into the housing wall. The useful signal is then routed to the outside via this inner connection. The signal path can also contain or consist of so-called corrugations. The corrugations are properties introduced into the material of the housing, which are designed, for example, to adapt the signal to be transmitted.

In the context of this description, high frequency means a frequency range above one GHz (gigahertz, 1 x 10E9 Hertz). Such frequency ranges are used for example in satellite radio transmission links. Such a satellite radio transmission link can be, for example, a Ka-band transmission link in a frequency range of 17.7-21.2 GHz for the downlink (downlink) and 27.5-31 GHz for the uplink (uplink), a Ku - or X-band implementation in the range around 11 or 7 GHz, or around an L-band (around 1.5 GHz), S-band (around 2.5 GHz) or C-band implementation (around 4 GHz).

It is pointed out that all statements in this description apply to the operation of the electronic unit as a signal source as well as a signal sink, unless explicitly stated otherwise. The general reference in the description to a signal output also applies to a signal input.

According to one embodiment, the inner connection is formed by an inner surface of the housing.

The electronic assembly is therefore guided by signals to the inner surface of the housing. A separate connection element that is separate from the housing is therefore not necessary.

According to a further embodiment, the inner connection is formed by a nose of the housing which projects into the interior.

The inner connection thus forms a web or a pin which projects into the interior and extends from the inner surface of the housing. The electronic assembly is connected to this bridge or pin.

According to a further embodiment, an electrically non-conductive material is at least partially arranged in a gap between the nose and adjacent housing wall sections.

This material can be, for example, a dielectric material such as Teflon. This reduces or even suppresses interference at high frequencies.

According to a further embodiment, the housing has aluminum or an aluminum alloy.

Generally speaking, the housing is made of an electrically conductive material. This can be aluminum or an aluminum alloy, for example an aluminum-silicon alloy. Other materials are possible. The housing can be made entirely of the same material. In particular, the housing can have a trough and a cover. The interior of the housing is in the tub or is formed by the tub. Lid and tray can be made of the same material. At the end of an assembly process for the high-frequency assembly, the cover is attached to the tub and covers or at least partially closes the interior.

For use in space or in earth orbit, preference is given to those materials which are suitable for this use on account of their coefficient of thermal expansion. The temperature fluctuations outside the earth's atmosphere can be very large, which is due in particular to the fact that the atmosphere for the removal of the heat is missing. The change between existing and missing solar radiation can then lead to very large temperature fluctuations in satellites and their components.

In order to keep mechanical loads at the interfaces between different components, in particular components made of different materials, low, the materials can be selected such that the thermal expansion coefficients are matched to one another, i.e. are almost the same or are within a certain range of values.

According to a further embodiment, the electronic unit is a high-performance amplifier, in particular a high-performance transistor amplifier.

In a further alternative embodiment, the electronic unit is a low noise amplifier (LNA) or a receiver or receiver (LNA with frequency converter).

Further designs are possible with this. The designs can be arranged for highly integrated high-frequency modules in the entrance area or in the exit area.

A high-performance amplifier is used, for example, in communication satellites to amplify communication signals and transmit them via a transmission path, e.g. to a radiation unit or antenna unit.

A high-performance transistor amplifier can also be referred to as a solid-state power amplifier (SSPA). This type of amplifier is used as an alternative or in addition to so-called traveling wave tube amplifiers at high frequencies. SSPAs are available in different performance classes and for very high frequency bands. For example, SSPAs can be used in the following frequency bands: C, X, Ku, Ka and Q band. At these frequencies and power classes, waveguides on the output side of the amplifier are preferred, if not necessary. The electronic unit can therefore be an SSPA for the frequency bands mentioned above.

According to a further embodiment, a connection between the electronic unit and the inner connection is a microstrip connection.

A so-called microstrip line is an electrical waveguide that consists of one or more electrically conductive strips. The strips can be applied on a dielectric.

The microstrip connection is connected at one end to the electronic unit. In the case of a high-performance transistor amplifier, one end of the microstrip connection is placed directly on the semiconductor substrate and is coupled to it, so that no further separate microstrip line is necessary to establish the connection from the semiconductor substrate to the waveguide transition.

The connection can be made using so-called wire bonding. The connections of the SSPA, i.e. an integrated circuit, are connected to the inner connection of the housing via the microstrip connection. Flat cables or flat cables, so-called ribbon bonding, can also be used for bonding.

According to a further embodiment, the housing has a second inner connection which is made in one piece with the housing, the second inner connection being connected to the electronic unit.

The second inner port is preferably spaced from the first inner port (the above-mentioned inner port). A second output of the electronic unit can be coupled to the second inner connection, the same options being available for this as already described above in connection with the first inner connection.

In one exemplary embodiment, a second electronic unit can be arranged in the interior of the housing and the second electronic unit is connected to the second inner connection in order to output a useful signal.

The first inner connection and the second inner connection each form a signal path or channel. Each channel can have at least one semiconductor substrate or a semiconductor, for example a transistor. The respective transistor of a signal path is placed on an electrically non-conductive substrate tile, which offers galvanic isolation for direct currents. In order to provide a separation between the signal paths in the high-frequency range, a suitable distance between the signal paths and their elements is selected so that the signal paths do not influence or interfere with each other. In order to achieve this, other elements can also be incorporated into the housing material, for example metallic elements, seals or HF absorber material.

According to a further embodiment, a surface of the housing is at least partially coated with gold or silver.

This can have a positive influence on the electrical conductivity. At least part of the surface, inside and / or outside, of the housing is coated accordingly. The coating can be a few µm thick.

According to a further embodiment, the high-frequency assembly furthermore has a first waveguide section. The first waveguide section bears against an outer surface of the housing.

The useful signal is thus carried by the electronic unit in the housing via the connection to the inner connection of the housing and from the housing to the waveguide.

This structure enables the high-frequency module to be constructed in a modular manner. First, the housing with the internal electronic unit and the connection between the housing and the electronic unit can be manufactured and / or assembled. Up to this point, the waveguide has not been connected or coupled to the housing. Only when the electronic unit in the interior of the housing is connected to the inner connection is the housing coupled to the waveguide. The housing is connected to the waveguide as a closed module.

According to a further embodiment, the first waveguide section consists of a first half shell and a second half shell, the housing being arranged between the first half shell and the second half shell.

The housing is therefore surrounded by the waveguide and the signal from the electronic unit is transmitted to the waveguide via the housing. For this purpose, at least one external connection can be provided on the housing.

If the housing provides several channels, a separate external connection can be provided for each channel.

The signal connection between the housing and the waveguide is established, for example, in that the two half-shells are connected to one another and rest on the outer surface of the housing. The waveguide is thus pressed against the outer surface of the housing. However, it is also conceivable that the waveguides are positively connected to the housing, e.g. screwed.

According to a further embodiment, the high-frequency assembly furthermore has a second waveguide section which adjoins the first waveguide section, so that the housing is enclosed by the first waveguide section and the second waveguide section.

The housing with the electronic unit is therefore encapsulated in the waveguide consisting of the first and second waveguide sections. Thus, the electronic unit in the housing is thermomechanically decoupled from the waveguide and each individual one of the waveguide sections.

The first waveguide section and the second waveguide section are mechanically connected to one another. For example, the two waveguide sections are screwed together. The waveguide sections are preferably reversibly connected to one another, so that the housing can also be removed from the waveguide. However, it is also conceivable that the two waveguide sections are integrally and not reversibly connected to one another.

The connection point of the first waveguide section with the second waveguide section can be produced by direct contact of the metallic housing walls. There can also be a gap between the metallic housing walls, via which capacitive coupling takes place. Likewise, a soft, electrically conductive, elastically deformable or yielding material can be introduced into the connection point of the first waveguide section with the second waveguide section in order to ensure the galvanic contact.

According to a further embodiment, the second waveguide section contains at least one element from the group comprising the following elements: filters, isolators, bends, antennas, circulators, multiplexers.

All elements which are required or desired for processing the high-frequency signals of the electronic unit can thus be arranged in the second waveguide section.

According to a further embodiment, the housing is configured in one piece with the first inner connection and with the second inner connection, insofar as this is present, and with all other components of the housing.

Alternatively, the housing can consist of two or more parts, for example partial shells or half shells.

According to a further aspect, a communication satellite is specified. The communication satellite has a high-frequency module as described above and below, the high-frequency module being arranged in a data transmission link in the communication satellite.

A communication satellite is a spacecraft intended for use in earth orbit, which contains a communication system for receiving and transmitting data or signals. In addition, a communication satellite can also contain units for processing the data. The high-frequency module can preferably be used in a signal processing path of the communication system of the communication satellite.

The high-frequency module is used for processing, processing and amplifying signals, in particular high-frequency signals in the above-mentioned frequency bands.

The structure of the high-frequency module described here makes it particularly suitable for use outside or in the outermost layers of the earth's atmosphere. The thermomechanical decoupling of the electronic unit (for example an amplifier unit) from the waveguide reduces the mechanical load on the electronic unit and on a connection going out of the electronic unit.

Figure list

• 1 eine schematische Darstellung eines Kommunikationssatelliten gemäß einem Ausführungsbeispiel.
• 2 eine schematische Darstellung eines Blockschaltbildes eines Hochleistungs-Transistorverstärkers.
• 3 eine schematische Darstellung einer Koaxialkopplung eines Verstärkers mit einem Hohlleiter.
• 4 eine schematische Darstellung einer kraftschlüssigen Kopplung zwischen einem Verstärker und einem Hohlleiter.
• 5 eine schematische Darstellung einer kraft- und formschlüssigen Kopplung zwischen einem Verstärker und einem Hohlleiter.
• 6 eine schematische isometrische Darstellung einer Hochfrequenzbaugruppe gemäß einem Ausführungsbeispiel.
• 7 eine schematische isometrische Darstellung einer Hochfrequenzbaugruppe gemäß einem weiteren Ausführungsbeispiel.
• 8 eine schematische isometrische Darstellung einer Hochfrequenzbaugruppe gemäß einem weiteren Ausführungsbeispiel.

In the following, exemplary embodiments of the invention are discussed in more detail with reference to the accompanying drawings. The representations are schematic and are not to scale. The same reference numerals refer to the same or similar elements. Show it:

• 1 is a schematic representation of a communication satellite according to an embodiment.
• 2nd is a schematic representation of a block diagram of a high-performance transistor amplifier.
• 3rd is a schematic representation of a coaxial coupling of an amplifier with a waveguide.
• 4th is a schematic representation of a frictional coupling between an amplifier and a waveguide.
• 5 is a schematic representation of a positive and positive coupling between an amplifier and a waveguide.
• 6 is a schematic isometric view of a high frequency assembly according to an embodiment.
• 7 is a schematic isometric view of a high frequency assembly according to another embodiment.
• 8th is a schematic isometric view of a high frequency assembly according to another embodiment.

Detailed description of exemplary embodiments

1 shows a schematic representation of a communication satellite 1 . In the communication satellite 1 is a high frequency assembly 10th arranged. The high-frequency assembly 10th can be part of a signal transmission path in the communication satellite. For example, the high-frequency assembly 10th Part of a control unit or signal processing for a transmission unit 2nd be, the transmission unit 2nd for example, is an antenna.

The high-frequency module described here is particularly suitable for the signaling connection of transistor amplifiers or generally semiconductor amplifiers (SSPA) to a signal output.

2nd shows an example of a block diagram of a semiconductor amplifier 20th (SSPA). Especially in high-performance applications, SSPAs have recently replaced or supplemented the traveling wave tube amplifiers. Particularly in applications where the SSPAs replace the traveling wave tubes, high performance requirements are imposed on the amplifier components at very high frequencies. At high powers and high frequencies (e.g. C, X, Ku, Ka and Q-Band) waveguide outputs are the preferred technology.

A typical SSPA 20th has an input interface 22 , a preamp 24th , a high-performance amplifier 26 and an output interface 28 on. In order to keep losses in the output interface as low as possible, it is desirable to have a waveguide output as close as possible to the output stage of the high-performance amplifier, i.e. the element 26 to arrange.

At least the high-performance amplifier 26 , but also others in 2nd The assemblies shown can be arranged within the housing of the high-frequency assembly claimed herein and can be referred to as an electronic unit.

3rd to 5 show the better understanding of the invention serving existing connection interfaces of a waveguide to an amplifier element.

3rd shows a connection variant using a coaxial line, which forms an inductive transition to the waveguide. An inner electrical conductor 33 the coaxial line is by means of a fastener 35 , for example a screw connection, with the waveguide 36 connected. The coaxial line is through the housing 37 guided. Here is the inner electrical conductor 33 with an insulating sleeve 34 Mistake. The insulating shell 34 surrounds the leader 33 and can be made of, for example, polytetrafluoroethylene or another insulating material. Inside the case 37 in its interior 46 is the leader 33 with an electronic substrate 31 connected. This connection 32 can be produced, for example, in strip line technology using a microstrip will. The substrate 31 can the in 2nd shown high power amplifier 26 be.

The signal path of the signal to be amplified is indicated by two arrows. A signal is sent to the high power amplifier 31 fed, processed there (ie reinforced) and via the connection 32 and the coaxial line 33 , 34 on the waveguide 36 guided.

The construction in 3rd has the following properties, which may be undesirable depending on the area of use: Because of the coaxial conductor 33 mechanically with the waveguide 36 is connected, a high mechanical load on the connection 32 are exercised, for example in the case of temperature fluctuations and the resulting thermal expansion of the waveguide and the housing and the other components. To prevent this stress, the housing can be made of a rigid material, which could, however, disadvantageously increase the weight. Furthermore, the coaxial line has a major impact on the losses. Ultimately, this structure is characterized by an unfavorable assembly sequence because the waveguide is connected to the coaxial line before the coaxial line is connected via a strip line 32 with the substrate 31 is connected. This allows access to the substrate 31 as well as the bonding points.

4th shows an alternative connection technique in which the waveguide 36 metallic ribs 38 Has. The metallic ribs are in direct galvanic connection with a microstrip connection 32 .

With this construction, the metallic rib exercises 38 a compressive force on the microstrip line to establish the galvanic connection. This pressure force influences the quality of the galvanic connection. With temperature fluctuations, however, the pressure force can fluctuate due to the different materials of the rib 38 and the substrate 31 and the microstrip line 32 . The materials have different coefficients of thermal expansion, which results in mechanical stress on the connection points when the temperature fluctuates. The waveguide 36 is also not thermomechanical of the substrate in this construction 31 decoupled. There is also a substrate with an embossed microstrip line 32 required, which also brings losses.

5 shows another way for a connection between the waveguide 36 and an electronic component 31 . The substrate 31 exhibits a metallization 32 on and gets straight into the waveguide 36 outside the case 37 coupled. The substrate protrudes from this 31 partly from the housing 37 out.

The substrate protrudes in this structure 31 however in the waveguide 36 without mechanical support and can be exposed to considerable mechanical stress.

In contrast, shows 6 a structure in which the electronic unit 45 (corresponds to the substrate 31 ) via a microstrip connection 32 with the housing 37 connected is. The electronic unit 45 is in the interior 46 of the housing 37 arranged. For example, the electronic unit 45 arranged on a bottom surface of the housing and mechanically connected to or fixed to the bottom surface. It is possible that the electronic unit is also mounted at a different position in the interior of the housing.

The inner connection 41 is part of the case, in the example the 6 is the inner connection 41 designed as a nose. The nose is made in one piece with the housing, for example a side wall of the housing. In 6 the nose protrudes at a right angle with respect to the side wall towards the interior 46 . The connection 32 connects the electronic unit 45 with a surface of the nose. The nose can be arranged and designed in such a way that a surface of the nose is at the same height as a surface of the electronic unit. In the example of the 6 is the top surface of the nose level with the top surface of the electronic unit. The connection 32 is so arranged that both ends are at the same height.

The housing 37 is surrounded by a waveguide structure 36 . The waveguide structure 36 in this example consists of two half shells 39 , 40 . The half shells are assembled so that the housing 37 is at least partially or completely surrounded by the half-shells. Thus the signal from the electronic unit 45 via the inner connector 41 and the housing 37 on the waveguide 36 guided. At least one half-shell of the waveguide lies at least partially on the outer wall of the housing 37 so that a galvanic connection is established and the signal can be coupled into the waveguide.

This structure enables the electrical connection 32 from the waveguide 36 is mechanically decoupled. The transition to the waveguide is provided by ribs or webs (for example the nose of the inner connection) in the housing. The ribs or webs can be milled into the housing or a housing wall. Such a web forms a fastening projection in the housing. The fastening projection protrudes from the Housing wall in the direction of the electronic unit. This reduces a distance from the electronic unit, which makes the connection 32 can simplify.

The waveguide 36 can be screwed to the housing. The waveguide can be arranged on the housing such that its direction of extension corresponds to the direction of propagation of the signal path. Changes in the direction of extension of the waveguide can be achieved via bends or rotations.

By the in 6 shown construction losses of the RF signal are reduced because the waveguide structure is coupled directly to the output of the electronic unit via the housing. The sensitive connection 32 is mechanically decoupled from the waveguide. This enables only the housing with the electronic unit arranged therein to be manufactured and connected first before the waveguide is attached.

7 shows another example of a high frequency assembly. The housing 37 in this example is also made of two half-shells and the inner connection designed as a nose or web 41 is part of a half shell of the housing. The internal connection is preferred 41 designed as part of the half shell on which the electronic unit is also mounted.

A stepped waveguide connection or a ribbed structure can be present on the output side of the housing to the waveguide. This structure has the function of converting the electrical signal at the inner connection from the stripline mode to the waveguide mode and, if appropriate, rotating the waveguide axis in a desired direction.

8th shows the case 37 within a waveguide structure consisting of the two waveguide sections 42 , 43 . The housing 37 is within a first waveguide section 42 arranged. This waveguide section 42 can consist of two half shells, as in connection with 6 described. The housing can be in this position within the first waveguide section 42 be screwed.

The first waveguide section 42 is in the direction of the arrow on the second waveguide section 43 placed and also coupled with this. Thus the housing is located 37 completely within the waveguide structure. External connections 44 schematically indicate the signal transition from the housing 37 to the waveguide structure.

In addition, it is pointed out that “comprehensive” or “having” does not exclude other elements or steps, and “a” or “an” does not exclude a large number. Furthermore, it should be pointed out that features or steps that have been described with reference to one of the above exemplary embodiments can also be used in combination with other features or steps of other exemplary embodiments described above. Reference signs in the claims are not to be viewed as a restriction.

Reference symbol list

1

satellite

2nd

Transmission unit, antenna

10th

High frequency assembly

20th

Block diagram of an amplifier module

22

Input interface

24th

Preamplifier

26

High power amplifier

28

Output interface

31

electronic substrate

32

connection

33

electrical conductor

34

Sleeve, dielectric

35

Fastener

36

Waveguide

37

casing

38

Connecting rib

39

first half shell

40

second half shell

41

internal connection

42

first waveguide section

43

second waveguide section

44

outer connection

45

electronic unit

46

inner space

47

gap

QUOTES INCLUDE IN THE DESCRIPTION

This list of documents listed by the applicant has been generated automatically and is only included for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent literature cited

• EP 2775612 A1 [0005]
• US 9530604 B2 [0005]

Claims (15)

High-frequency assembly (10), comprising: an electronic unit (45); a housing (37) which at least partially surrounds the electronic unit (45) and the electronic unit (45) is at least partially arranged in an interior (46) of the housing; an inner connector (41) disposed on the housing and coupled to the electronic unit (45) so that electrical signals can be transmitted between the electronic unit (45) and the inner connector (41); wherein the inner connection (41) is designed in one piece with at least a part of the housing (37). High-frequency assembly (10) after Claim 1 , wherein the inner connection (45) is formed by an inner surface of the housing (37). High-frequency assembly (10) after Claim 1 or 2nd , wherein the inner connection (45) is formed by a nose of the housing protruding into the interior (46). High-frequency assembly (10) after Claim 3 , An electrically non-conductive material being arranged at least partially in a gap (47) between the nose and adjacent housing wall sections. High-frequency assembly (10) according to any one of the preceding claims, wherein the housing comprises aluminum or an aluminum alloy. High-frequency assembly (10) according to one of the preceding claims, wherein the electronic unit (45) is a high-performance amplifier, in particular a high-performance transistor amplifier. High frequency assembly (10) according to any one of the preceding claims, wherein a connection (32) between the electronic unit (45) and the inner terminal (41) is a microstrip connection. High-frequency assembly (10) according to one of the preceding claims, the housing (37) having a second inner connection which is made in one piece with the housing; wherein the second inner connector is connected to the electronic unit (45). High-frequency assembly (10) according to any one of the preceding claims, wherein a surface of the housing (37) is at least partially coated with gold or silver. High-frequency assembly (10) according to one of the preceding claims, further comprising a first waveguide section (42) which abuts an outer surface of the housing (37). High-frequency assembly (10) after Claim 10 , wherein the first waveguide section (42) consists of a first half shell (39) and a second half shell (40); the housing (37) being arranged between the first half-shell and the second half-shell. High-frequency assembly (10) according to one of the Claims 10 or 11 , further comprising a second waveguide section (43) which adjoins the first waveguide section (42) so that the housing (37) is enclosed by the first waveguide section (42) and the second waveguide section (43). High-frequency assembly (10) after Claim 12 , wherein the second waveguide section (43) contains at least one element from the group comprising the following elements: filters, isolators, bends, antennas, circulators, multiplexers. High-frequency assembly (10) according to any one of the preceding claims, wherein the housing (37) is designed in one piece. Communication satellite (1), comprising: a high-frequency assembly (10) according to any one of the preceding claims, the high-frequency module (10) being arranged in a data transmission link in the communication satellite.

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