DE102018122823B4 - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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Publication number
DE102018122823B4
DE102018122823B4 DE102018122823.6A DE102018122823A DE102018122823B4 DE 102018122823 B4 DE102018122823 B4 DE 102018122823B4 DE 102018122823 A DE102018122823 A DE 102018122823A DE 102018122823 B4 DE102018122823 B4 DE 102018122823B4
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Prior art keywords
aluminum alloy
mass
magnesium
semiconductor body
power semiconductor
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DE102018122823.6A
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German (de)
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DE102018122823A1 (en
Inventor
Jörn Grossmann
Bernhard König
Wolfgang-Michael Schulz
Monika Delepine
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Semikron Elektronik GmbH and Co KG
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Semikron Elektronik GmbH and Co KG
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Abstract

Leistungshalbleitereinrichtung aufweisend ein Leistungshalbleiterbauelement mit einem Halbleiterkörper (2), der eine erste Halbleiterkörperhauptseite (3), eine der ersten Halbleiterkörperhauptseite (3) gegenüberliegend angeordnete zweite Halbleiterkörperhauptseite (4) und einen um den Halbleiterkörper (2) umlaufenden, die erste und zweite Halbleiterkörperhauptseite (3,4) verbindenden Halbleiterkörperrand (28) aufweist, wobei der Leistungshalbleiterbauelement (1) zum elektrischen Anschluss eine auf der zweiten Halbleiterkörperhauptseite (4) angeordnete erste Anschlussmetallisierung (5) aufweist, die eine erste Metallschicht (5a) aus einer ersten Aluminiumlegierung oder aus einer zweiten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen,wobei die erste Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 3,4% bis 4,6% der Masse der ersten Aluminiumlegierung beträgt, wobei die erste Aluminiumlegierung Mangan aufweist, wobei die Masse des Mangans 0,1% bis 0,8% der Masse der ersten Aluminiumlegierung beträgt, wobei die zweite Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,6% bis 1,4%, die Masse des Magnesiums 0,5% bis 1,3% und die Masse des Mangans 0,3% bis 1,1% der Masse der zweiten Aluminiumlegierung beträgt,und aufweisend ein Bonddraht (8) oder ein Bondband, wobei der Bonddraht (8) oder das Bondband ein Metall aus einer fünften Aluminiumlegierung oder aus einer sechsten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen,wobei die fünfte Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 0,5% bis 6% der Masse der fünften Aluminiumlegierung beträgt, wobei die sechste Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,5% bis 2%, die Masse des Magnesiums 0,4% bis 1,9% und die Masse des Mangans 0,4% bis 2% der Masse der sechsten Aluminiumlegierung beträgt,wobei der Bonddraht (8) oder das Bondband an die erste Metallschicht (5a) der ersten Anschlussmetallisierung (5) ultraschall gebondet ist.A power semiconductor device comprising a power semiconductor component with a semiconductor body (2) which has a first semiconductor body main side (3), a second semiconductor body main side (4) arranged opposite the first semiconductor body main side (3) and a first and second semiconductor body main side (3) surrounding the semiconductor body (2) , 4) has connecting semiconductor body edge (28), wherein the power semiconductor component (1) for electrical connection has a first connection metallization (5) arranged on the second main semiconductor body side (4) and having a first metal layer (5a) made of a first aluminum alloy or a second Having aluminum alloy, each having aluminum as the main component, the first aluminum alloy having magnesium, the mass of the magnesium being 3.4% to 4.6% of the mass of the first aluminum alloy, the first aluminum alloy having manganese, the mass of the M Generally 0.1% to 0.8% of the mass of the first aluminum alloy, the second aluminum alloy having silicon, magnesium and manganese, the mass of the silicon 0.6% to 1.4%, the mass of the magnesium 0.5 % to 1.3% and the mass of the manganese is 0.3% to 1.1% of the mass of the second aluminum alloy, and having a bonding wire (8) or a bonding tape, the bonding wire (8) or the bonding tape being a metal a fifth aluminum alloy or a sixth aluminum alloy, each having aluminum as the main component, the fifth aluminum alloy having magnesium, the mass of the magnesium being 0.5% to 6% of the mass of the fifth aluminum alloy, the sixth aluminum alloy silicon, magnesium and manganese, wherein the mass of silicon is 0.5% to 2%, the mass of magnesium is 0.4% to 1.9% and the mass of manganese is 0.4% to 2% of the mass of the sixth aluminum alloy, wherein the bonding wire (8) or the B ondband is ultrasonically bonded to the first metal layer (5a) of the first connection metallization (5).

Description

Beschreibungdescription

Die Erfindung betrifft eine Leistungshalbleitereinrichtung.The invention relates to a power semiconductor device.

Aus der DE 10 2016 117 389 A1 ist ein Leistungshalbleiterbauelement mit einem Halbleiterkörper und einer auf dem Halbleiterkörper angeordneten Metallisierung, die eine Metallschicht aus Aluminium oder aus einer Aluminiumlegierung (z.B. AISi) aufweist, bekannt.From the DE 10 2016 117 389 A1 a power semiconductor component with a semiconductor body and a metallization which is arranged on the semiconductor body and has a metal layer made of aluminum or an aluminum alloy (eg AISi) is known.

Leistungshalbleiterbauelemente sind, insbesondere bei Hochseeanwendungen wie z.B. bei auf Hochsee installierten Windkraftanlagen, durch das salzhaltige Hochseewasser einer hohen Korrosionsbelastung ausgesetzt. Insbesondere die Metallschicht aus Aluminium oder aus einer für die Verwendung als Metallschicht einer Metallisierung eines Leistungshalbleiterbauelements bekannten Aluminiumlegierung (z.B. AISi) ist hinsichtlich einer solchen Korrosionsbelastung anfällig, was zu einer geringen Lebensdauer des Leistungshalbleiterbauelements führen kann.Power semiconductor components are exposed to high levels of corrosion from the salty open sea water, especially in offshore applications such as wind turbines installed on the high seas. In particular, the metal layer made of aluminum or made of an aluminum alloy (e.g. AISi) known for use as the metal layer of a metallization of a power semiconductor component is susceptible to such a corrosion load, which can lead to a short service life of the power semiconductor component.

Aus der US 2016/0163 806 A1 ist ein Halbleiterbauelement mit einer aus einer Aluminiumlegierung bestehenden Anschlussmetallisierung bekannt, die Magnesium in einer Konzentration von 0,001 % bis 3% aufweist.From the US 2016/0163 806 A1 a semiconductor component is known with a connection metallization consisting of an aluminum alloy which has magnesium in a concentration of 0.001% to 3%.

Aus der US 3 754 901 A ist ein Siliziumleistungstransistor mit einer aus einer Aluminiumlegierung bestehenden Anschlussmetallisierung bekannt, die 0,5 Gewichtsprozent Silizium, 0,3 bis 0,9 Gewichtsprozent Mangan und 1,2 bis 1,8 Gewichtsprozent Magnesium aufweist.From the U.S. 3,754,901 A a silicon power transistor with a connection metallization consisting of an aluminum alloy is known which has 0.5 percent by weight silicon, 0.3 to 0.9 percent by weight manganese and 1.2 to 1.8 percent by weight magnesium.

Aus der DE 36 06 224 A1 ist ein Halbleiterchip mit einer aus einer Aluminiumlegierung bestehenden Anschlussmetallisierung bekannt, die Verunreinigungen von Silizium, Magnesium und/oder Mangan mit einem jeweiligen Anteil von 0,001% bis 0,5% aufweisen kann.From the DE 36 06 224 A1 a semiconductor chip is known with a connection metallization consisting of an aluminum alloy, which may have impurities of silicon, magnesium and / or manganese in a respective proportion of 0.001% to 0.5%.

Aus der GB 367 831 A ist eine gegen Seewasser widerstandsfähige Aluminiumlegierung bekannt, die 0,1% bis 10% Magnesium, 0,1% bis 6% Silizium und 1,4% Mangan aufweist.From the GB 367 831 A an aluminum alloy is known which is resistant to seawater and which has 0.1% to 10% magnesium, 0.1% to 6% silicon and 1.4% manganese.

Aus der DE 10 2006 044 691 A1 ist ein aus einer Aluminiumlegierung bestehender Bonddraht bekannt, wobei die Aluminiumlegierung Zusätze von Nickel oder Magnesium aufweist.From the DE 10 2006 044 691 A1 a bonding wire consisting of an aluminum alloy is known, the aluminum alloy having additions of nickel or magnesium.

Es ist Aufgabe der Erfindung eine Leistungshalbleitereinrichtung aufweisend ein Leistungshalbleiterbauelement mit einem Halbleiterkörper und einer auf dem Halbleiterkörper angeordneten ersten Anschlussmetallisierung mit einer ersten Metallschicht zu schaffen, die eine hohe Korrosionswiderstandsfähigkeit aufweist, wobei ein Bonddraht oder ein Bondband der Leistungshalbleitereinrichtung mit der ersten Anschlussmetallisierung mittels einer mechanisch hochbelastbaren Bondverbindung verbunden ist.The object of the invention is to create a power semiconductor device comprising a power semiconductor component with a semiconductor body and a first connection metallization arranged on the semiconductor body with a first metal layer, which has a high corrosion resistance, a bonding wire or a bond tape of the power semiconductor device with the first connection metallization by means of a mechanically highly resilient Bond connection is connected.

Diese Aufgabe wird gelöst durch eine Leistungshalbleitereinrichtung aufweisend ein Leistungshalbleiterbauelement mit einem Halbleiterkörper, der eine erste Halbleiterkörperhauptseite, eine der ersten Halbleiterkörperhauptseite gegenüberliegend angeordnete zweite Halbleiterkörperhauptseite und einen um den Halbleiterkörper umlaufenden, die erste und zweite Halbleiterkörperhauptseite verbindenden Halbleiterkörperrand aufweist, wobei der Leistungshalbleiterbauelement zum elektrischen Anschluss eine auf der zweiten Halbleiterkörperhauptseite angeordnete erste Anschlussmetallisierung aufweist, die eine erste Metallschicht aus einer ersten Aluminiumlegierung oder aus einer zweiten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen,
wobei die erste Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 3,4% bis 4,6% der Masse der ersten Aluminiumlegierung beträgt, wobei die erste Aluminiumlegierung Mangan aufweist, wobei die Masse des Mangans 0,1% bis 0,8% der Masse der ersten Aluminiumlegierung beträgt,
wobei die zweite Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,6% bis 1,4%, die Masse des Magnesiums 0,5% bis 1,3% und die Masse des Mangans 0,3% bis 1,1% der Masse der zweiten Aluminiumlegierung beträgt,
und aufweisend ein Bonddraht oder ein Bondband, wobei der Bonddraht oder das Bondband ein Metall aus einer fünften Aluminiumlegierung oder aus einer sechsten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen, wobei die fünfte Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 0,5% bis 6% der Masse der fünften Aluminiumlegierung beträgt,
wobei die sechste Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,5% bis 2%, die Masse des Magnesiums 0,4% bis 1,9% und die Masse des Mangans 0,4% bis 2% der Masse der sechsten Aluminiumlegierung beträgt,
wobei der Bonddraht oder das Bondband an die erste Metallschicht der ersten Anschlussmetallisierung ultraschall gebondet ist.This object is achieved by a power semiconductor device having a power semiconductor component with a semiconductor body which has a first semiconductor body main side, a second semiconductor body main side arranged opposite the first semiconductor body main side, and a semiconductor body edge surrounding the semiconductor body and connecting the first and second semiconductor body main sides, the power semiconductor component having a semiconductor body edge for electrical connection has a first connection metallization which is arranged on the second main side of the semiconductor body and has a first metal layer made of a first aluminum alloy or of a second aluminum alloy, each of which has aluminum as a main component,
wherein the first aluminum alloy comprises magnesium, the mass of the magnesium being 3.4% to 4.6% of the mass of the first aluminum alloy, the first aluminum alloy comprising manganese, the mass of the manganese being 0.1% to 0.8% of the Mass of the first aluminum alloy is
wherein the second aluminum alloy comprises silicon, magnesium and manganese, the mass of the silicon 0.6% to 1.4%, the mass of the magnesium 0.5% to 1.3% and the mass of the manganese 0.3% to 1 , Is 1% of the mass of the second aluminum alloy,
and having a bonding wire or a bonding tape, the bonding wire or the bonding tape having a metal from a fifth aluminum alloy or from a sixth aluminum alloy, each of which has aluminum as a main component, the fifth aluminum alloy having magnesium, the mass of the magnesium being 0.5% up to 6% of the mass of the fifth aluminum alloy,
wherein the sixth aluminum alloy comprises silicon, magnesium and manganese, the mass of the silicon 0.5% to 2%, the mass of the magnesium 0.4% to 1.9% and the mass of the manganese 0.4% to 2% of the Mass of the sixth aluminum alloy is
wherein the bonding wire or the bonding tape is ultrasonically bonded to the first metal layer of the first connection metallization.

Bei der Leistungshalbleitereinrichtung ist die Bondverbindung des Bonddrahts oder des Bondbands mit der ersten Anschlussmetallisierung mechanisch hochbelastbar und die Leistungshalbleitereinrichtung weist somit eine hohe Lebensdauer auf.In the case of the power semiconductor device, the bond connection between the bond wire or the bond tape is to the first connection metallization mechanically highly resilient and the power semiconductor device thus has a long service life.

Bei der ersten Aluminiumlegierung beträgt die Masse des Magnesiums 3,4% bis 4,6% der Masse der ersten Aluminiumlegierung, wobei die erste Aluminiumlegierung Mangan aufweist, wobei die Masse des Mangans 0,1% bis 0,8% der Masse der ersten Aluminiumlegierung beträgt. Hierdurch weist die erste Metallschicht eine besonders hohe Korrosionswiderstandsfähigkeit auf.In the case of the first aluminum alloy, the mass of the magnesium is 3.4% to 4.6% of the mass of the first aluminum alloy, the first aluminum alloy having manganese, the mass of the manganese being 0.1% to 0.8% of the mass of the first aluminum alloy amounts to. As a result, the first metal layer has a particularly high resistance to corrosion.

Bei der zweiten Aluminiumlegierung beträgt die Masse des Siliziums 0,6% bis 1,4%, die Masse des Magnesiums 0,5% bis 1,3% und die Masse des Mangans 0,3% bis 1,1% der Masse der zweiten Aluminiumlegierung. Hierdurch weist die erste Metallschicht eine besonders hohe Korrosionswiderstandsfähigkeit auf.In the case of the second aluminum alloy, the mass of silicon is 0.6% to 1.4%, the mass of magnesium is 0.5% to 1.3% and the mass of manganese is 0.3% to 1.1% of the mass of the second Aluminum alloy. As a result, the first metal layer has a particularly high resistance to corrosion.

Es erweist sich als vorteilhaft, wenn die erste Metallschicht direkt auf der zweiten Halbleiterkörperhauptseite angeordnet ist oder wenn zwischen der ersten Metallschicht und der zweiten Halbleiterkörperhauptseite mindestens eine elektrisch leitende, insbesondere aus Wolfram, Titan oder aus einer Titan-Wolframlegierung ausgebildete, Verbindungsschicht der ersten Anschlussmetallisierung angeordnet ist. Bei der ersten Alternative ist das Leistungshalbleiterbauelement besonders einfach herstellbar. Bei der zweiten Alternative ist die erste Metallschicht mechanisch sehr belastbar über die Verbindungsschicht mit der zweiten Halbleiterkörperhauptseite verbunden.It proves to be advantageous if the first metal layer is arranged directly on the second main side of the semiconductor body or if at least one electrically conductive connection layer of the first connection metallization, in particular made of tungsten, titanium or a titanium-tungsten alloy, is arranged between the first metal layer and the second main side of the semiconductor body is. In the first alternative, the power semiconductor component is particularly easy to manufacture. In the second alternative, the first metal layer is connected to the second main side of the semiconductor body via the connection layer so that it can be mechanically stressed.

Weiterhin erweist es sich als vorteilhaft, wenn das Leistungshalbleiterbauelement eine, auf seiner zweiten Halbleiterkörperhauptseite, an einem Randbereich des Leistungshalbleiterbauelements angeordnete, Feldplattenmetallisierung aufweist, die eine zweite Metallschicht aus der ersten oder zweiten Aluminiumlegierung aufweist, da dann die zweite Metallschicht eine hohe Korrosionswiderstandsfähigkeit aufweist.Furthermore, it proves to be advantageous if the power semiconductor component has a field plate metallization arranged on its second main semiconductor body side at an edge region of the power semiconductor component, which has a second metal layer made of the first or second aluminum alloy, since the second metal layer then has high corrosion resistance.

Weiterhin erweist es sich als vorteilhaft, wenn das Leistungshalbleiterbauelement zum elektrischen Anschluss eine, auf seiner ersten Halbleiterkörperhauptseite angeordnete zweite Anschlussmetallisierung aufweist, die eine dritte Metallschicht aus einer dritten Aluminiumlegierung oder aus einer vierten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen,
wobei die dritte Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 0,5% bis 6% der Masse der dritten Aluminiumlegierung beträgt,
wobei die vierte Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,5% bis 2%, die Masse des Magnesiums 0,4% bis 1,9% und die Masse des Mangans 0,4% bis 2% der Masse der vierten Aluminiumlegierung beträgt. Hierdurch weist die dritte Metallschicht eine hohe Korrosionswiderstandsfähigkeit auf.Furthermore, it proves to be advantageous if the power semiconductor component for electrical connection has a second connection metallization which is arranged on its first main side of the semiconductor body and which has a third metal layer made of a third aluminum alloy or a fourth aluminum alloy, each of which has aluminum as the main component,
wherein the third aluminum alloy comprises magnesium, the mass of the magnesium being 0.5% to 6% of the mass of the third aluminum alloy,
wherein the fourth aluminum alloy comprises silicon, magnesium and manganese, the mass of the silicon 0.5% to 2%, the mass of the magnesium 0.4% to 1.9% and the mass of the manganese 0.4% to 2% of the Mass of the fourth aluminum alloy is. As a result, the third metal layer has a high level of corrosion resistance.

In diesem Zusammenhang erweist es sich als vorteilhaft, wenn die zweite Anschlussmetallisierung eine auf der dritten Metallschicht angeordnete Chromschicht, eine auf der Chromschicht angeordnete Nickelschicht und eine auf der Nickelschicht angeordnete Silberschicht aufweist, da dann die zweite Anschlussmetallisierung zuverlässig elektrisch leitend kontaktierbar ist.In this context, it proves to be advantageous if the second connection metallization has a chromium layer arranged on the third metal layer, a nickel layer arranged on the chromium layer and a silver layer arranged on the nickel layer, since the second connection metallization can then be reliably contacted in an electrically conductive manner.

Es sei an dieser Stelle allgemein angemerkt, dass vorzugsweise die Halbleiterzonen des zweiten Leitungstyps als p-dotierte Halbleiterzonen ausgebildet sind (p-Leitungstyp) und die Halbleiterzonen des ersten Leitungstyps als n-dotierte Halbleiterzonen ausgebildet sind (n-Leitungstyp). Alternativ können die Halbleiterzonen des ersten Leitungstyps als p-dotierte Halbleiterzonen ausgebildet (p-Leitungstyp) sein und die Halbleiterzonen des zweiten Leitungstyps als n-dotierte Halbleiterzonen ausgebildet (n-Leitungstyp) sein.It should be noted at this point that the semiconductor zones of the second conductivity type are preferably designed as p-doped semiconductor zones (p-conductivity type) and the semiconductor zones of the first conductivity type are designed as n-doped semiconductor zones (n-conductivity type). Alternatively, the semiconductor zones of the first conductivity type can be designed as p-doped semiconductor zones (p-conductivity type) and the semiconductor zones of the second conductivity type can be designed as n-doped semiconductor zones (n-conductivity type).

Es sei weiterhin angemerkt, dass im Sinne der Erfindung unter dem Begriff Metall auch eine Metalllegierung verstanden wird.It should also be noted that in the context of the invention, the term metal is also understood to mean a metal alloy.

Ein Ausführungsbeispiel der Erfindung wird nachfolgend unter Bezugnahme auf die unten stehenden 1 erläutert. Dabei zeigen:

  • 1 eine Schnittansicht einer Ausbildung einer erfindungsgemäßen Leistungshalbleitereinrichtung mit einem Leistungshalbleiterbauelement und mit einem an eine erste Anschlussmetallisierung des Leistungshalbleiterbauelements gebondeten Bonddraht, der ein Metall aus einer fünften oder sechsten Aluminiumlegierung aufweist,
  • 2 eine Schnittansicht einer Leistungshalbleitereinrichtung mit einem weiteren Leistungshalbleiterbauelement und mit einem an eine erste Anschlussmetallisierung des Leistungshalbleiterbauelements gebondeten Kupferbonddraht,
  • 3 eine Schnittansicht einer Leistungshalbleitereinrichtung mit einem Leistungshalbleiterbauelement und mit einem an eine erste Anschlussmetallisierung des Leistungshalbleiterbauelements gebondeten Kupferbonddraht,
  • 4 eine Schnittansicht einer Leistungshalbleitereinrichtung mit einem Leistungshalbleiterbauelement und mit einem mit einer ersten Anschlussmetallisierung des Leistungshalbleiterbauelements mittels einer Sinterverbindung verbundenen Metallelements und
  • 5 eine Schnittansicht einer Leistungshalbleitereinrichtung mit einem Leistungshalbleiterbauelement und mit einem mit einer ersten Anschlussmetallisierung des Leistungshalbleiterbauelements mittels einer Sinterverbindung verbundenen Metallelements.
An embodiment of the invention is described below with reference to the below 1 explained. Show:
  • 1 a sectional view of an embodiment of a power semiconductor device according to the invention with a power semiconductor component and with a bonding wire bonded to a first connection metallization of the power semiconductor component, which has a metal made from a fifth or sixth aluminum alloy,
  • 2 a sectional view of a power semiconductor device with a further power semiconductor component and with a copper bond wire bonded to a first connection metallization of the power semiconductor component,
  • 3 a sectional view of a power semiconductor device with a power semiconductor component and with a copper bond wire bonded to a first connection metallization of the power semiconductor component,
  • 4th a sectional view of a power semiconductor device with a power semiconductor component and with a metal element connected to a first connection metallization of the power semiconductor component by means of a sintered connection, and FIG
  • 5 a sectional view of a power semiconductor device with a power semiconductor component and with a metal element connected to a first connection metallization of the power semiconductor component by means of a sintered connection.

Es sei angemerkt, dass es sich bei den Figuren um schematisierte Darstellungen handelt. Gleiche Elemente sind in den Figuren mit den gleichen Bezugszeichen versehen.It should be noted that the figures are schematic representations. The same elements are provided with the same reference symbols in the figures.

In 1 ist eine Schnittansicht einer Ausbildung einer erfindungsgemäßen Leistungshalbleitereinrichtung 15 mit einer Ausbildung eines Leistungshalbleiterbauelements 1 dargestellt. In den 2 bis 5 ist jeweilig eine Schnittansicht einer Ausbildung einer Leistungshalbleitereinrichtung 15 mit einer jeweiligen Ausbildung eines Leistungshalbleiterbauelements 1 dargestellt. Es sei angemerkt, das bei dem Ausführungsbeispiel das Leistungshalbleiterbauelement 1 als Diode ausgebildet ist, was nicht notwendigerweise so sein muss. Das Leistungshalbleiterbauelement 1 könnte z.B. auch als Transistor oder Thyristor ausgebildet sein.In 1 Fig. 13 is a sectional view of an embodiment of a power semiconductor device according to the invention 15th with a formation of a power semiconductor component 1 shown. In the 2 to 5 Fig. 16 is a sectional view of an embodiment of a power semiconductor device, respectively 15th with a respective formation of a power semiconductor component 1 shown. It should be noted that in the exemplary embodiment, the power semiconductor component 1 is designed as a diode, which does not necessarily have to be so. The power semiconductor component 1 could for example also be designed as a transistor or thyristor.

Das Leistungshalbleiterbauelement 1 weist einen Halbleiterkörper 2, der eine erste Halbleiterkörperhauptseite 3, eine der ersten Halbleiterkörperhauptseite 3 gegenüberliegend angeordnete zweite Halbleiterkörperhauptseite 4 und einen um den Halbleiterkörper 2 umlaufenden, die erste und zweite Halbleiterkörperhauptseite 3 und 4 verbindenden Halbleiterkörperrand 28 auf. Das Halbleitermaterial des Halbleiterkörpers 2 besteht vorzugsweise aus Silizium oder Siliziumkarbid.The power semiconductor component 1 has a semiconductor body 2 , the a first semiconductor body main side 3 , one of the first main side of the semiconductor body 3 oppositely arranged second semiconductor body main side 4th and one around the semiconductor body 2 circumferential, the first and second semiconductor body main side 3 and 4th connecting edge of the semiconductor body 28 on. The semiconductor material of the semiconductor body 2 consists preferably of silicon or silicon carbide.

Der Halbleiterkörper 2 ist bei allen Leistungshalbleitereinrichtungen identisch ausgebildet. Der Halbleiterkörper 2 weist eine erste Halbleiterzone 9 eines ersten Leitungstyps auf, wobei eine Außenfläche 9' der ersten Halbleiterzone 5 die erste Halbleiterkörperhauptseite 3 ausbildet. Der Halbleiterkörper 2 weist weiterhin eine auf der ersten Halbleiterzone 9 angeordnete zweite Halbleiterzone 10 des ersten Leitungstyps 10 auf, die eine niedrigere Dotierungskonzentration als die erste Halbleiterzone 6 aufweist. Weiterhin weist der Halbleiterkörper 2 einen in einem Innenbereich 30 des Halbleiterkörper 2 in der zweiten Halbleiterzone 10 angeordnete dritte Halbleiterzone 11 eines zweiten Leitungstyps auf. Die dritte Halbleiterzone 11 bildet eine in der zweiten Halbleiterzone 10 angeordnete Wanne aus. Die dritte Halbleiterzone 11 weist eine Außenfläche 11' auf, die einen Flächenbereich der zweiten Halbleiterkörperhauptseite 4 ausbildet. Weiterhin weist der Halbleiterkörper 2 eine in einem Randbereich 40 des Halbleiterkörpers 1 in der zweiten Halbleiterzone 10 angeordnete vierte Halbleiterzone 12 des zweiten Leitungstyps auf. Die vierte Halbleiterzone 12 weist eine Außenfläche 12' auf, die einen Flächenbereich der zweiten Halbleiterkörperhauptseite 4 ausbildet. Die vierte Halbleiterzone 12 verläuft um die dritte Halbleiterzone 11 herum. Weiterhin weist der Halbleiterkörper 2 eine in einem Randbereich 40 des Halbleiterkörpers 1 in der zweiten Halbleiterzone 10 angeordnete und an den Halbleiterkörperrand 28 angrenzende fünfte Halbleiterzone 13 des ersten Leitungstyps auf, wobei die fünfte Halbleiterzone 13 eine höhere Dotierungskonzentration als die zweite Halbleiterzone 10 aufweist. Die fünfte Halbleiterzone 13 weist eine Außenfläche 13' auf, die einen Flächenbereich der zweiten Halbleiterkörperhauptseite 4 ausbildet. Die fünfte Halbleiterzone 12 verläuft um die vierte Halbleiterzone 11 herum.The semiconductor body 2 is designed identically for all power semiconductor devices. The semiconductor body 2 has a first semiconductor zone 9 of a first conduction type, with an outer surface 9 ' the first semiconductor zone 5 the first main side of the semiconductor body 3 trains. The semiconductor body 2 furthermore has one on the first semiconductor zone 9 arranged second semiconductor zone 10 of the first line type 10 which has a lower doping concentration than the first semiconductor zone 6th having. The semiconductor body also has 2 one in an indoor area 30th of the semiconductor body 2 in the second semiconductor zone 10 arranged third semiconductor zone 11 of a second type of line. The third semiconductor zone 11 forms one in the second semiconductor zone 10 arranged tub. The third semiconductor zone 11 has an outer surface 11 ' on, the one surface area of the second semiconductor body main side 4th trains. The semiconductor body also has 2 one in an edge area 40 of the semiconductor body 1 in the second semiconductor zone 10 arranged fourth semiconductor zone 12th of the second line type. The fourth semiconductor zone 12th has an outer surface 12 ' on, the one surface area of the second semiconductor body main side 4th trains. The fourth semiconductor zone 12th runs around the third semiconductor zone 11 around. The semiconductor body also has 2 one in an edge area 40 of the semiconductor body 1 in the second semiconductor zone 10 arranged and on the edge of the semiconductor body 28 adjoining fifth semiconductor zone 13th of the first conductivity type, the fifth semiconductor zone 13th a higher doping concentration than the second semiconductor zone 10 having. The fifth semiconductor zone 13th has an outer surface 13 ' on, the one surface area of the second semiconductor body main side 4th trains. The fifth semiconductor zone 12th runs around the fourth semiconductor zone 11 around.

Das Leistungshalbleiterbauelement 1 weist weiterhin zum elektrischen Anschluss eine auf der zweiten Halbleiterkörperhauptseite 4 angeordnete erste Anschlussmetallisierung 5 auf, die eine erste Metallschicht 5a aus einer ersten Aluminiumlegierung oder aus einer zweiten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen. Die Anschlussmetallisierung 5 weist bei allen Leistungshalbleitereinrichtungen einen elektrisch leitenden Kontakt mit der dritten Halbleiterzone 11 auf. Die erste Aluminiumlegierung weist Magnesium auf, wobei die Masse des Magnesiums 3,4% bis 4,6% der Masse der ersten Aluminiumlegierung beträgt, wobei die erste Aluminiumlegierung Mangan aufweist, wobei die Masse des Mangans 0,1% bis 0,8% der Masse der ersten Aluminiumlegierung beträgt. Die zweite Aluminiumlegierung weist Silizium, Magnesium und Mangan auf, wobei die Masse des Siliziums 0,6% bis 1,4%, die Masse des Magnesiums 0,5% bis 1,3% und die Masse des Mangans 0,3% bis 1,1% der Masse der zweiten Aluminiumlegierung beträgt. Die erste Anschlussmetallisierung 5 bildet bei allen Leistungshalbleitereinrichtungen die Anode des Leistungshalbleiterbauelements 1, d.h. die Anode der Diode 1 aus.The power semiconductor component 1 furthermore has one on the second semiconductor body main side for the electrical connection 4th arranged first connection metallization 5 on that a first metal layer 5a from a first aluminum alloy or from a second aluminum alloy, each of which has aluminum as a main component. The connection metallization 5 has an electrically conductive contact with the third semiconductor zone in all power semiconductor devices 11 on. The first aluminum alloy comprises magnesium, the mass of the magnesium being 3.4% to 4.6% of the mass of the first aluminum alloy, the first aluminum alloy comprising manganese, the mass of the manganese being 0.1% to 0.8% of the Mass of the first aluminum alloy is. The second aluminum alloy has silicon, magnesium and manganese, the mass of the silicon being 0.6% to 1.4%, the mass of the magnesium 0 , 5% to 1.3% and the mass of the manganese is 0.3% to 1.1% of the mass of the second aluminum alloy. The first connection metallization 5 forms the anode of the power semiconductor component 1, ie the anode of the diode 1, in all power semiconductor devices.

Die erste und zweite Aluminiumlegierung weisen, insbesondere gegenüber salzhaltigen Umgebungsmedien, eine hohe Korrosionswiderstandsfähigkeit auf, so dass eine Verwendung des Leistungshalbleiterbauelements 1, insbesondere bei Hochseeanwendungen (z.B. Offshore Windkraftanlagen, Bohrplattformen, Schiffen etc.), besonders vorteilhaft ist.The first and second aluminum alloys have a high resistance to corrosion, in particular to saline ambient media, so that the power semiconductor component can be used 1 , in particular in offshore applications (e.g. offshore wind turbines, drilling platforms, ships, etc.), is particularly advantageous.

Die erste Aluminiumlegierung kann z.B. als AIMg4Mn Legierung ausgebildet sein. Die erste Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Silizium, Eisen Kupfer, Chrom, Zink und Titan aufweisen.The first aluminum alloy can be designed as an AlMg4Mn alloy, for example. The first aluminum alloy can contain silicon, iron, copper, chromium, zinc and titanium in low concentrations as further alloy components.

Die zweite Aluminiumlegierung kann z.B. als AISiMgMn Legierung ausgebildet sein. Die zweite Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Eisen Kupfer, Chrom, Zink und Titan aufweisen.The second aluminum alloy can be designed as an AISiMgMn alloy, for example. The second aluminum alloy can be used as another Alloy components contain iron, copper, chromium, zinc and titanium in low concentrations.

Bei allen Leistungshalbleitereinrichtungen ist die erste Metallschicht 5a direkt auf der zweiten Halbleiterkörperhauptseite 4 angeordnet. Zwischen der ersten Metallschicht 5a und der zweiten Halbleiterkörperhauptseite 4 kann aber auch mindestens eine elektrisch leitende, insbesondere aus Wolfram, Titan oder aus einer Titan-Wolframlegierung ausgebildete, Verbindungsschicht der ersten Anschlussmetallisierung 5 angeordnet sein.The first metal layer is in all power semiconductor devices 5a directly on the second main side of the semiconductor body 4th arranged. Between the first metal layer 5a and the second main side of the semiconductor body 4th however, at least one electrically conductive connection layer, in particular made of tungsten, titanium or a titanium-tungsten alloy, of the first connection metallization can also be used 5 be arranged.

Das Leistungshalbleiterbauelement 1 weist vorzugsweise eine, auf seiner zweiten Halbleiterkörperhauptseite 4, an dem Randbereich 40 des Leistungshalbleiterbauelements 1 angeordnete, Feldplattenmetallisierung 6 auf, die eine zweite Metallschicht 6a aus der ersten oder zweiten Aluminiumlegierung aufweist. Wie beispielhaft in den 1 bis 5 dargestellt, kann das Leistungshalbleiterbauelement 1 auch mehrere Feldplattenmetallisierungen 6 aufweisen. Die jeweilige Feldplattenmetallisierung 6 weist bei allen Ausführungsbeispielen einen elektrisch leitenden Kontakt mit der vierten Halbleiterzone 12 bzw. mit der fünften Halbleiterzone 13 auf. Die jeweilige Feldplattenmetallisierung 6 verläuft vorzugsweise um die erste Anschlussmetallisierung 5 herum. Die Feldplattenmetallisierung 6 weist vorzugsweise ausschließlich die zweite Metallschicht 6a auf.The power semiconductor component 1 preferably has one on its second main semiconductor body side 4th , at the edge area 40 of the power semiconductor component 1 arranged, field plate metallization 6th on that a second metal layer 6a comprises the first or second aluminum alloy. As exemplified in the 1 to 5 shown, the power semiconductor component 1 also several field plate metallizations 6th exhibit. The respective field plate metallization 6th has an electrically conductive contact with the fourth semiconductor zone in all exemplary embodiments 12th or with the fifth semiconductor zone 13th on. The respective field plate metallization 6th preferably runs around the first connection metallization 5 around. The field plate metallization 6th preferably exclusively has the second metal layer 6a on.

Das Leistungshalbleiterbauelement 1 weist weiterhin vorzugsweise auf der zweiten Halbleiterkörperhauptseite 4 angeordnete und seitlich mit der ersten Anschlussmetallisierung 5 und/oder mit der jeweiligen Feldplattenmetallisierung 6 einen mechanischen Kontakt aufweisende, vorzugsweise aus Siliziumoxid ausgebildete, elektrisch nicht leitende Isolationsschichtbereiche 14 auf. Es sei angemerkt, dass im Sinne der Erfindung eine in einem Oberflächenbereich einer Halbleiterzone des Halbleiterkörpers 2 durch chemische Reaktion (z.B. Oxidation) erzeugte elektrisch nicht leitende Schicht, wie z.B. eine Siliziumoxidschicht, nicht mehr Bestandteil der betreffenden Halbleiterzone und des Halbleiterkörpers 2 ist. Das Leistungshalbleiterbauelement 1 weist weiterhin vorzugsweise eine die Feldplattenmetallisierungen 6 bedeckende und z.B. aus Silikon ausgebildete Passivierungsschicht 16 auf.The power semiconductor component 1 furthermore preferably has on the second main side of the semiconductor body 4th arranged and laterally with the first connection metallization 5 and / or with the respective field plate metallization 6th electrically non-conductive insulation layer regions having a mechanical contact, preferably formed from silicon oxide 14th on. It should be noted that, in the context of the invention, one in a surface region of a semiconductor zone of the semiconductor body 2 Electrically non-conductive layer produced by chemical reaction (eg oxidation), such as a silicon oxide layer, is no longer part of the relevant semiconductor zone and the semiconductor body 2 is. The power semiconductor component 1 furthermore preferably has one of the field plate metallizations 6th covering passivation layer formed, for example, from silicone 16 on.

Weiterhin weist das Leistungshalbleiterbauelement 1 zum elektrischen Anschluss vorzugsweis eine, auf seiner ersten Halbleiterkörperhauptseite 3 angeordnete zweite Anschlussmetallisierung 7 aufweist, die eine dritte Metallschicht 7a aus einer dritten Aluminiumlegierung oder aus einer vierten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen, wobei die dritte Aluminiumlegierung Magnesium aufweist, wobei die Masse der Magnesiums 0,5% bis 6%, insbesondere 2% bis 6%, der Masse der dritten Aluminiumlegierung beträgt,
wobei die vierte Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,5% bis 2%, die Masse des Magnesiums 0,4% bis 1,9% und die Masse des Mangans 0,4% bis 2% der Masse der vierten Aluminiumlegierung beträgt.The power semiconductor component also has 1 for the electrical connection, preferably one on its first main side of the semiconductor body 3 arranged second connection metallization 7th having a third metal layer 7a comprises a third aluminum alloy or a fourth aluminum alloy, each having aluminum as the main component, the third aluminum alloy having magnesium, the mass of the magnesium 0 , 5% to 6%, in particular 2% to 6%, of the mass of the third aluminum alloy,
wherein the fourth aluminum alloy comprises silicon, magnesium and manganese, the bulk of the silicon 0 , 5% to 2%, the mass of magnesium 0 , 4% to 1.9% and the mass of manganese 0 , 4% to 2% of the mass of the fourth aluminum alloy.

Die zweite Anschlussmetallisierung 7 bildet bei allen Ausführungsbeispielen die Kathode des Leistungshalbleiterbauelements 1, d.h. die Kathode der Diode 1 aus.The second connection metallization 7th forms the cathode of the power semiconductor component in all exemplary embodiments 1 , ie the cathode of the diode 1 out.

Bei der dritten Aluminiumlegierung beträgt vorzugsweise die Masse des Magnesiums 2,5% bis 3,7% der Masse der ersten Aluminiumlegierung. Die dritte Aluminiumlegierung kann z.B. als AIMg3 Legierung ausgebildet sein. Die dritte Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Silizium, Eisen, Kupfer, Mangan, Chrom, Zink und Titan aufweisen.In the case of the third aluminum alloy, the mass of the magnesium is preferably 2.5% to 3.7% of the mass of the first aluminum alloy. The third aluminum alloy can be designed as an AlMg3 alloy, for example. The third aluminum alloy can contain silicon, iron, copper, manganese, chromium, zinc and titanium in low concentrations as further alloy components.

Alternativ beträgt vorzugsweise bei der dritten Aluminiumlegierung die Masse des Magnesiums 3,4% bis 4,6% der Masse der ersten Aluminiumlegierung, wobei die dritten Aluminiumlegierung Mangan aufweist, wobei die Masse des Mangans 0,1% bis 1,5%, insbesondere 0,1% bis 0,8% der Masse der dritten Aluminiumlegierung beträgt. Die dritte Aluminiumlegierung kann z.B. als AIMg4Mn Legierung ausgebildet sein. Die dritte Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Silizium, Eisen Kupfer, Chrom, Zink und Titan aufweisen.Alternatively, the mass of the magnesium in the third aluminum alloy is preferably 3.4% to 4.6% of the mass of the first aluminum alloy, the third aluminum alloy having manganese, the mass of the manganese being 0.1% to 1.5%, in particular 0 , 1% to 0.8% of the mass of the third aluminum alloy. The third aluminum alloy can be designed as an AlMg4Mn alloy, for example. The third aluminum alloy can contain silicon, iron, copper, chromium, zinc and titanium in low concentrations as further alloy components.

Bei der vierten Aluminiumlegierung beträgt vorzugsweise die Masse des Siliziums 0,6% bis 1,4%, die Masse des Magnesiums 0,5% bis 1,3% und die Masse des Mangans 0,3% bis 1,1% der Masse der vierten Aluminiumlegierung. Die vierte Aluminiumlegierung kann z.B. als AISiMgMn Legierung ausgebildet sein. Die vierte Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Eisen Kupfer, Chrom, Zink und Titan aufweisen.In the case of the fourth aluminum alloy, the mass of silicon is preferably 0.6% to 1.4%, the mass of magnesium 0 , 5% to 1.3% and the mass of manganese 0.3% to 1.1% of the mass of the fourth aluminum alloy. The fourth aluminum alloy can be designed as an AISiMgMn alloy, for example. The fourth aluminum alloy can contain iron, copper, chromium, zinc and titanium as further alloy components in low concentrations.

Bei allen Leistungshalbleitereinrichtungen ist die dritte Metallschicht 7a direkt auf der ersten Halbleiterkörperhauptseite 3 angeordnet. Zwischen der dritten Metallschicht 7a und der ersten Halbleiterkörperhauptseite 3 kann aber auch mindestens eine elektrisch leitende, insbesondere aus Wolfram, Titan oder aus einer Titan-Wolframlegierung ausgebildete, Verbindungsschicht der zweiten Anschlussmetallisierung 7 angeordnet sein.In all power semiconductor devices, the third layer is metal 7a directly on the first main side of the semiconductor body 3 arranged. Between the third metal layer 7a and the first semiconductor body main side 3 however, at least one electrically conductive connection layer, in particular made of tungsten, titanium or a titanium-tungsten alloy, of the second connection metallization can also be used 7th be arranged.

Die zweite Anschlussmetallisierung 7 weist vorzugsweise eine auf der dritten Metallschicht 7a angeordnete Chromschicht 7b, eine auf der Chromschicht 7b angeordnete Nickelschicht 7c und eine auf der Nickelschicht 7c angeordnete Silberschicht 7d aufweist.The second connection metallization 7th preferably has one on the third metal layer 7a arranged chrome layer 7b , one on the Chrome layer 7b arranged nickel layer 7c and one on the nickel layer 7c arranged silver layer 7d having.

Wie beispielhaft in 1 dargestellt, kann die erste Anschlussmetallisierung 5 auch ausschließlich die erste Metallschicht 5a aufweisen.As exemplified in 1 shown, the first connection metallization 5 also only the first metal layer 5a exhibit.

Wie beispielhaft in den 2 bis 5 dargestellt, kann die erste Anschlussmetallisierung 5 eine über der ersten Metallschicht 5a angeordnete Nickelschicht 5c aufweisen. Vorzugsweise ist direkt auf der ersten Metallschicht 5a eine Chromschicht 5b angeordnet und die Nickelschicht 5c ist direkt auf der Chromschicht 5b angeordnet.As exemplified in the 2 to 5 shown, the first connection metallization 5 one over the first metal layer 5a arranged nickel layer 5c exhibit. Preferably is directly on the first metal layer 5a a chrome layer 5b arranged and the nickel layer 5c is right on the chrome layer 5b arranged.

Wie beispielhaft in 5 dargestellt, kann die erste Anschlussmetallisierung 5 eine über der Nickelschicht 5c angeordnete Palladiumschicht 5e oder Silberschicht 5f aufweisen.As exemplified in 5 shown, the first connection metallization 5 one over the nickel layer 5c arranged palladium layer 5e or silver layer 5f exhibit.

Wie beispielhaft in den 2 bis 4 dargestellt, kann die erste Anschlussmetallisierung 5 eine über der Nickelschicht 5c angeordnete Palladiumschicht 5e und eine direkt auf der Palladiumschicht 5e angeordnete Goldschicht 5h aufweisen.As exemplified in the 2 to 4th shown, the first connection metallization 5 one over the nickel layer 5c arranged palladium layer 5e and one directly on top of the palladium layer 5e arranged gold layer 5h exhibit.

Wie beispielhaft in 3 dargestellt, kann die erste Anschlussmetallisierung 5 eine über der Nickelschicht 5c, insbesondere eine direkt auf der Nickelschicht 5c, angeordnete Kupferschicht 5g aufweisen. Die erste Anschlussmetallisierung 5 weist vorzugsweise eine über der Kupferschicht 5g, insbesondere eine direkt auf der Kupferschicht 5g, angeordnete Palladiumschicht 5e auf. Weiterhin weist die erste Anschlussmetallisierung 5 vorzugsweise eine direkt auf der Palladiumschicht 5e angeordnete Goldschicht 5h auf.As exemplified in 3 shown, the first connection metallization 5 one over the nickel layer 5c , especially one directly on the nickel layer 5c , arranged copper layer 5g exhibit. The first connection metallization 5 preferably has one over the copper layer 5g , especially one directly on the copper layer 5g , arranged palladium layer 5e on. Furthermore, the first connection metallization 5 preferably one directly on top of the palladium layer 5e arranged gold layer 5h on.

In 1 ist eine erfindungsgemäße Leistungshalbleitereinrichtung 15, die das Leistungshalbleiterbauelement 1 und einen Bonddraht 8 oder ein Bondband aufweist, wobei der Bonddraht 8 oder das Bondband an die erste Metallschicht 5a der ersten Anschlussmetallisierung 5 ultraschall gebondet, ist, dargestellt. Der Bonddraht 8 oder das Bondband weist ein Metall aus einer fünften Aluminiumlegierung oder aus einer sechsten Aluminiumlegierung auf, die jeweilig Aluminium als Hauptbestandteil aufweisen,
wobei die fünfte Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 0,5% bis 6%, insbesondere 2% bis 6%, der Masse der fünften Aluminiumlegierung beträgt,
wobei die sechste Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,5% bis 2%, die Masse des Magnesiums 0,4% bis 1,9% und die Masse des Mangans 0,4% bis 2% der Masse der sechsten Aluminiumlegierung beträgt.In 1 is a power semiconductor device according to the invention 15th , which is the power semiconductor component 1 and a bond wire 8th or a bond tape, wherein the bond wire 8th or the bond tape to the first metal layer 5a the first connection metallization 5 ultrasonically bonded is shown. The bond wire 8th or the bond tape has a metal from a fifth aluminum alloy or from a sixth aluminum alloy, each of which has aluminum as the main component,
the fifth aluminum alloy comprising magnesium, the mass of the magnesium being 0.5% to 6%, in particular 2% to 6%, of the mass of the fifth aluminum alloy,
wherein the sixth aluminum alloy comprises silicon, magnesium and manganese, the mass of the silicon 0.5% to 2%, the mass of the magnesium 0.4% to 1.9% and the mass of the manganese 0.4% to 2% of the Mass of the sixth aluminum alloy is.

Bei der fünften Aluminiumlegierung beträgt vorzugsweise die Masse des Magnesiums 2,5% bis 3,7% der Masse der fünften Aluminiumlegierung. Die fünfte Aluminiumlegierung kann z.B. als AIMg3 Legierung ausgebildet sein. Die fünfte Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Silizium, Eisen, Kupfer, Mangan, Chrom, Zink und Titan aufweisen.In the case of the fifth aluminum alloy, the mass of the magnesium is preferably 2.5% to 3.7% of the mass of the fifth aluminum alloy. The fifth aluminum alloy can be designed as an AlMg3 alloy, for example. The fifth aluminum alloy can contain silicon, iron, copper, manganese, chromium, zinc and titanium as further alloy components in low concentrations.

Alternativ beträgt vorzugsweise bei der fünften Aluminiumlegierung die Masse des Magnesiums 3,4% bis 4,6% der Masse der fünften Aluminiumlegierung wobei die erste Aluminiumlegierung Mangan aufweist, wobei die Masse des Mangans 0,1% bis 1,5%, insbesondere 0,1% bis 0,8% der Masse der fünften Aluminiumlegierung beträgt. Die fünfte Aluminiumlegierung kann z.B. als AIMg4Mn Legierung ausgebildet sein. Die fünfte Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Silizium, Eisen Kupfer, Chrom, Zink und Titan aufweisen.Alternatively, the mass of the magnesium in the fifth aluminum alloy is preferably 3.4% to 4.6% of the mass of the fifth aluminum alloy, the first aluminum alloy having manganese, the mass of the manganese being 0.1% to 1.5%, in particular 0, 1% to 0.8% by mass of the fifth aluminum alloy. The fifth aluminum alloy can be designed as an AlMg4Mn alloy, for example. The fifth aluminum alloy can contain silicon, iron, copper, chromium, zinc and titanium in low concentrations as further alloy components.

Bei der sechsten Aluminiumlegierung beträgt vorzugsweise die Masse des Siliziums 0,6% bis 1,4%, die Masse des Magnesiums 0,5% bis 1,3% und die Masse des Mangans 0,3% bis 1,1% der Masse der sechsten Aluminiumlegierung. Die sechste Aluminiumlegierung kann z.B. als AISiMgMn Legierung ausgebildet sein. Die sechste Aluminiumlegierung kann als weitere Legierungsbestanteile in geringen Konzentrationen Eisen Kupfer, Chrom, Zink und Titan aufweisen.In the sixth aluminum alloy, the mass of silicon is preferably 0.6% to 1.4%, the mass of magnesium 0.5% to 1.3% and the mass of manganese 0.3% to 1.1% of the mass of the sixth aluminum alloy. The sixth aluminum alloy can be designed as an AISiMgMn alloy, for example. The sixth aluminum alloy can contain iron, copper, chromium, zinc and titanium in low concentrations as further alloy components.

Das aus der fünften oder sechsten Aluminiumlegierung bestehende Metall des Bonddrahts 8 oder Bondbands kann an der Oberfläche oder in einem oberflächennahen Bereich des Bonddrahts 8 oder Bondbands angeordnet sein, wobei in diesem Fall der Bonddraht 8 oder das Bondband einen Innenbereich aus mindestens einem anderem Metall aufweist. Alternativ kann der Bonddraht 8 oder das Bondband auch ausschließlich aus dem aus der fünften oder sechsten Aluminiumlegierung bestehenden Metall ausgebildet sein.The metal of the bonding wire, consisting of the fifth or sixth aluminum alloy 8th or bonding tapes can be on the surface or in an area of the bonding wire close to the surface 8th or bond bands, in which case the bond wire 8th or the bond tape has an inner area made of at least one other metal. Alternatively, the bond wire 8th or the bond tape can also be formed exclusively from the metal consisting of the fifth or sixth aluminum alloy.

In 2 ist eine Leistungshalbleitereinrichtung 15, die das Leistungshalbleiterbauelement 1 und einen Kupferbonddraht 8' oder ein Kupferbondband aufweist, wobei der Kupferbonddraht 8' oder das Kupferbondband an die Nickelschicht 5c der ersten Anschlussmetallisierung 5 gebondet ist, insbesondere ultraschall gebondet ist, dargestellt. Durch die beim Bonden auf die erste Anschlussmetallisierung 5 einwirkenden Kräfte wird der Kupferbonddraht 8' oder das Kupferbondband mit der Nickelschicht 5c stoffschlüssig verbunden.In 2 is a power semiconductor device 15th , which is the power semiconductor component 1 and a copper bond wire 8th' or a copper bond tape, wherein the copper bond wire 8th' or the copper bond tape to the nickel layer 5c the first connection metallization 5 is bonded, in particular ultrasonically bonded, is shown. Due to the bonding to the first connection metallization 5 acting forces will be the copper bond wire 8th' or the copper bond tape with the nickel layer 5c firmly connected.

In 3 ist eine Leistungshalbleitereinrichtung 15, die das Leistungshalbleiterbauelement 1 und einen Kupferbonddraht 8' oder ein Kupferbondband aufweist, wobei der Kupferbonddraht 8' oder das Kupferbondband an die Kupferschicht 5g der ersten Anschlussmetallisierung 5 gebondet ist, insbesondere ultraschall gebondet ist, dargestellt. Durch die beim Bonden auf die erste Anschlussmetallisierung 5 einwirkenden Kräfte wird der Kupferbonddraht 8' oder das Kupferbondband mit der Kupferschicht 5g stoffschlüssig verbunden.In 3 is a power semiconductor device 15th , which is the power semiconductor component 1 and a copper bond wire 8th' or a copper bond tape, wherein the copper bond wire 8th' or the copper bond tape to the copper layer 5g the first connection metallization 5 is bonded, in particular ultrasonically bonded, is shown. Due to the bonding to the first connection metallization 5 acting forces will be the copper bond wire 8th' or the copper bond tape with the copper layer 5g firmly connected.

Es sei an dieser Stelle angemerkt, dass unter einem Kupferbonddraht oder einem Kupferbondband ein Kupferbonddraht oder ein Kupferbondband verstanden wird, das aus Kupfer oder einer Kupferlegierung, die als Hauptbestandteil Kupfer enthält, besteht. Der Kupferbonddraht oder das Kupferbondband kann dabei gegebenenfalls, z.B. zum Schutz vor Oxidation, mit mindestens einer dünnen Beschichtung beschichtet sein, die beim Bonden durch die schnelle Schwingbewegung des Kupferbonddrahts oder Kupferbondbands an dessen Kontaktbereich zur ersten Anschlussmetallisierung 5 weggeschliffen wird.It should be noted at this point that a copper bonding wire or a copper bonding tape is understood to mean a copper bonding wire or a copper bonding tape which consists of copper or a copper alloy which contains copper as its main component. The copper bonding wire or the copper bonding tape can optionally be coated with at least one thin coating, for example to protect against oxidation, which during bonding due to the rapid oscillating movement of the copper bonding wire or copper bonding tape at its contact area to the first connection metallization 5 is ground away.

Beim Ultraschallboden wird der jeweilige Bonddraht 8 bzw. 8' oder das jeweilige Bondband mittels Druck- und Schwingungsbeaufschlagung mit der jeweiligen Schicht 5a, 5c bzw. 5g an die es gebondet werden soll, stoffschlüssig verbunden. Es bildet sich dabei eine Reib-Schweißverbindung zwischen dem Bonddraht 8, 8' bzw. Bondband und der jeweiligen Schicht 5a, 5c bzw. 5g aus.The respective bonding wire is used for the ultrasonic floor 8th or. 8th' or the respective bond tape by applying pressure and vibration to the respective layer 5a , 5c or. 5g to which it is to be bonded, cohesively connected. A friction weld connection is formed between the bonding wire 8th , 8th' or bond tape and the respective layer 5a , 5c or. 5g out.

In den 3 bis 5 ist eine Leistungshalbleitereinrichtung 15, die das Leistungshalbleiterbauelement 1 und ein Metallelement 17, das über eine Sinterschicht 16 mit der ersten Anschlussmetallisierung 5 elektrisch leitend verbunden ist, dargestellt. Die Sinterschicht 18 besteht vorzugsweise aus Silber und ist durch Versinterung einer Silberpartikel enthaltenen Sinterpaste ausgebildet worden. Das Metallelement 17 kann z.B. als Metallfolie ausgebildet sein, wobei die Metallfolie auf einer in den Figuren der Übersichtlichkeit halber nicht dargestellten Kunststofffolie angeordnet und stoffschlüssig mit ihr verbunden sein kann. Das Metallelement 17 kann z.B. aber auch als Metallblechelement ausgebildet sein. Bei 3 und 4 ist das Metallelement 17 über die Sinterschicht 16 mit der Goldschicht 5h der ersten Anschlussmetallisierung 5 verbunden. Bei 5 ist das Metallelement 17 über die Sinterschicht 16 mit der Palladiumschicht 5e oder der Silberschicht 5f der ersten Anschlussmetallisierung 5 verbunden.In the 3 to 5 is a power semiconductor device 15th , which is the power semiconductor component 1 and a metal element 17th that has a sintered layer 16 with the first connection metallization 5 is electrically connected, shown. The sintered layer 18th consists preferably of silver and has been formed by sintering a sintering paste containing silver particles. The metal element 17th can, for example, be designed as a metal foil, wherein the metal foil can be arranged on a plastic foil, not shown in the figures for the sake of clarity, and connected to it in a materially bonded manner. The metal element 17th but can also be designed as a sheet metal element, for example. At 3 and 4th is the metal element 17th over the sintered layer 16 with the gold layer 5h the first connection metallization 5 connected. At 5 is the metal element 17th over the sintered layer 16 with the palladium layer 5e or the silver layer 5f the first connection metallization 5 connected.

Claims (5)

Leistungshalbleitereinrichtung aufweisend ein Leistungshalbleiterbauelement mit einem Halbleiterkörper (2), der eine erste Halbleiterkörperhauptseite (3), eine der ersten Halbleiterkörperhauptseite (3) gegenüberliegend angeordnete zweite Halbleiterkörperhauptseite (4) und einen um den Halbleiterkörper (2) umlaufenden, die erste und zweite Halbleiterkörperhauptseite (3,4) verbindenden Halbleiterkörperrand (28) aufweist, wobei der Leistungshalbleiterbauelement (1) zum elektrischen Anschluss eine auf der zweiten Halbleiterkörperhauptseite (4) angeordnete erste Anschlussmetallisierung (5) aufweist, die eine erste Metallschicht (5a) aus einer ersten Aluminiumlegierung oder aus einer zweiten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen, wobei die erste Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 3,4% bis 4,6% der Masse der ersten Aluminiumlegierung beträgt, wobei die erste Aluminiumlegierung Mangan aufweist, wobei die Masse des Mangans 0,1% bis 0,8% der Masse der ersten Aluminiumlegierung beträgt, wobei die zweite Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,6% bis 1,4%, die Masse des Magnesiums 0,5% bis 1,3% und die Masse des Mangans 0,3% bis 1,1% der Masse der zweiten Aluminiumlegierung beträgt, und aufweisend ein Bonddraht (8) oder ein Bondband, wobei der Bonddraht (8) oder das Bondband ein Metall aus einer fünften Aluminiumlegierung oder aus einer sechsten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen, wobei die fünfte Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 0,5% bis 6% der Masse der fünften Aluminiumlegierung beträgt, wobei die sechste Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,5% bis 2%, die Masse des Magnesiums 0,4% bis 1,9% und die Masse des Mangans 0,4% bis 2% der Masse der sechsten Aluminiumlegierung beträgt, wobei der Bonddraht (8) oder das Bondband an die erste Metallschicht (5a) der ersten Anschlussmetallisierung (5) ultraschall gebondet ist.A power semiconductor device comprising a power semiconductor component with a semiconductor body (2) which has a first semiconductor body main side (3), a second semiconductor body main side (4) arranged opposite the first semiconductor body main side (3) and a first and second semiconductor body main side (3) surrounding the semiconductor body (2) , 4) connecting semiconductor body edge (28), wherein the power semiconductor component (1) for electrical connection has a first connection metallization (5) which is arranged on the second main semiconductor body side (4) and which has a first metal layer (5a) made of a first aluminum alloy or a second Has aluminum alloys, each of which has aluminum as its main component, wherein the first aluminum alloy comprises magnesium, the mass of the magnesium being 3.4% to 4.6% of the mass of the first aluminum alloy, the first aluminum alloy comprising manganese, the mass of the manganese being 0.1% to 0.8% of the The mass of the first aluminum alloy is, the second aluminum alloy having silicon, magnesium and manganese, the mass of the silicon 0.6% to 1.4%, the mass of the magnesium 0.5% to 1.3% and the mass of the manganese 0.3% to 1.1% of the mass of the second aluminum alloy, and having a bonding wire (8) or a bonding tape, wherein the bonding wire (8) or the bonding tape has a metal from a fifth aluminum alloy or from a sixth aluminum alloy, each of which has aluminum as a main component, the fifth aluminum alloy comprising magnesium, the mass of the magnesium being 0.5% to 6% of the mass of the fifth aluminum alloy, the sixth aluminum alloy comprising silicon, magnesium and manganese, the mass of the silicon being 0.5% to 2%, the mass of magnesium is 0.4% to 1.9% and the mass of manganese is 0.4% to 2% of the mass of the sixth aluminum alloy, wherein the bonding wire (8) or the bonding tape is ultrasonically bonded to the first metal layer (5a) of the first connection metallization (5). Leistungshalbleitereinrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die erste Metallschicht (5a) direkt auf der zweiten Halbleiterkörperhauptseite (4) angeordnet ist oder dass zwischen der ersten Metallschicht (5a) und der zweiten Halbleiterkörperhauptseite (4) mindestens eine elektrisch leitende, insbesondere aus Wolfram, Titan oder aus einer Titan-Wolframlegierung ausgebildete, Verbindungsschicht der ersten Anschlussmetallisierung (5) angeordnet ist.Power semiconductor device according to one of the preceding claims, characterized in that the first metal layer (5a) is arranged directly on the second semiconductor body main side (4) or that between the first metal layer (5a) and the second semiconductor body main side (4) at least one electrically conductive, in particular from Tungsten, titanium or formed from a titanium-tungsten alloy, connecting layer of the first connection metallization (5) is arranged. Leistungshalbleitereinrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Leistungshalbleiterbauelement (1) eine, auf seiner zweiten Halbleiterkörperhauptseite (4), an einem Randbereich (40) des Leistungshalbleiterbauelements (1) angeordnete, Feldplattenmetallisierung (6) aufweist, die eine zweite Metallschicht (6a) aus der ersten oder zweiten Aluminiumlegierung aufweist.Power semiconductor device according to one of the preceding claims, characterized in that the power semiconductor component (1) has a field plate metallization (6) which is arranged on its second main semiconductor body side (4) at an edge region (40) of the power semiconductor component (1) and which has a second metal layer ( 6a) comprises the first or second aluminum alloy. Leistungshalbleitereinrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Leistungshalbleiterbauelement (1) zum elektrischen Anschluss eine, auf seiner ersten Halbleiterkörperhauptseite (3) angeordnete zweite Anschlussmetallisierung (7) aufweist, die eine dritte Metallschicht (7a) aus einer dritten Aluminiumlegierung oder aus einer vierten Aluminiumlegierung aufweist, die jeweilig Aluminium als Hauptbestandteil aufweisen, wobei die dritte Aluminiumlegierung Magnesium aufweist, wobei die Masse des Magnesiums 0,5% bis 6% der Masse der dritten Aluminiumlegierung beträgt, wobei die vierte Aluminiumlegierung Silizium, Magnesium und Mangan aufweist, wobei die Masse des Siliziums 0,5% bis 2%, die Masse des Magnesiums 0,4% bis 1,9% und die Masse des Mangans 0,4% bis 2% der Masse der vierten Aluminiumlegierung beträgt.Power semiconductor device according to one of the preceding claims, characterized in that the power semiconductor component (1) for electrical connection has a second connection metallization (7) which is arranged on its first main semiconductor body side (3) and which has a third metal layer (7a) made of a third aluminum alloy or a having fourth aluminum alloy, each having aluminum as the main component, the third aluminum alloy having magnesium, the mass of the magnesium being 0.5% to 6% of the mass of the third aluminum alloy, the fourth aluminum alloy having silicon, magnesium and manganese, the The mass of silicon is 0.5% to 2%, the mass of magnesium is 0.4% to 1.9% and the mass of manganese is 0.4% to 2% of the mass of the fourth aluminum alloy. Leistungshalbleitereinrichtung nach Anspruch 4, dadurch gekennzeichnet, dass die zweite Anschlussmetallisierung (7) eine auf der dritten Metallschicht (7a) angeordnete Chromschicht (7b), eine auf der Chromschicht (7b) angeordnete Nickelschicht (7c) und eine auf der Nickelschicht (7c) angeordnete Silberschicht (7d) aufweist.Power semiconductor device according to Claim 4 , characterized in that the second connection metallization (7) has a chrome layer (7b) arranged on the third metal layer (7a), a nickel layer (7c) arranged on the chrome layer (7b) and a silver layer (7d) arranged on the nickel layer (7c) having.
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