DE102017204052A1 - Method and control device for determining a voltage drop of an electronic component - Google Patents

Abstract

The invention relates to a method for determining a voltage drop (104) of an electronic component (100), the method comprising a step of driving a switch (108) using a switching signal (106) for the component (100) and a step of measuring the Voltage drop (104) using a measuring device (110), the switch (108) being connected between a first terminal (114) of the component (100) and the measuring device (110) connected to a second terminal (116) of the component (100). is arranged, wherein the switch (108) is turned on, after the device (100) by the switching signal (106) has been turned on, and the switch (108) is turned off before the device (100) by the switching signal ( 106) is turned off, and wherein the voltage drop (104) is measured when the switch (108) is turned on.

Description

The present invention relates to a method and a controller for determining a voltage drop of an electronic component.

A current flow through a device causes a voltage drop due to the internal resistance of the device. The voltage drop is generally small compared to an operating voltage of the device.

Against this background, the present invention provides an improved method for determining a voltage drop of an electronic component, a corresponding control device, a device with the control device, and finally a corresponding computer program product according to the main claims. Advantageous embodiments will become apparent from the dependent claims and the description below.

A measuring device for the high-resolution measurement of a voltage drop across an electronic component is sensitive to the operating voltage of the component. Before the measuring device, a blocking component can be switched, which prevents the operating voltage from the measuring device. The blocking component may be a switch, which is then turned on when the voltage drop occurs and then turned off when the operating voltage is applied to the component.

• Ansteuern eines Schalters unter Verwendung eines Schaltsignals für das Bauelement, wobei der Schalter zwischen einem ersten Anschluss des Bauelements und einer mit einem zweiten Anschluss des Bauelements verbundenen Messeinrichtung angeordnet ist, wobei der Schalter leitend geschaltet wird, nachdem das Bauelement durch das Schaltsignal leitend geschaltet worden ist, und der Schalter sperrend geschaltet wird, bevor das Bauelement durch das Schaltsignal sperrend geschaltet wird; und
• Messen des Spannungsabfalls unter Verwendung der Messeinrichtung, wobei der Spannungsabfall gemessen wird, wenn der Schalter leitend geschaltet ist.

A method for determining a voltage drop of an electronic component is presented, the method comprising the following steps:

• Driving a switch using a switching signal for the device, wherein the switch between a first terminal of the device and a measuring device connected to a second terminal of the device is arranged, wherein the switch is turned on after the device has been turned on by the switching signal and the switch is turned off before the device is turned off by the switching signal; and
• Measuring the voltage drop using the measuring device, wherein the voltage drop is measured when the switch is turned on.

An electronic component can be understood as meaning an electrically controllable switch, such as a relay or a transistor. The component can be switched to conductive or blocking. A switch may also be an electrically controllable switch, such as a relay or a transistor. The switch keeps the operating voltage from the measuring device when the operating voltage is blocked by the component. When the device is turned on, the switch switches the measuring device parallel to the device.

The switch may be turned on later by a waiting period later than the device. Due to the delay caused by the waiting time, the measuring device is not burdened by disturbing couplings due to the switching operation

The voltage drop can be measured later by a stabilization period, as the switch is turned on. Due to the stabilization period, a current flow through the measuring device can reach a stable state. After the stabilization period, an approximately static state will be detected.

The switch can be switched off after a switching period. The measuring device is only briefly connected in parallel to the component.

The steps of the method may be repeated while the device is turned on. Thus, a course of the voltage drop can be detected and / or a higher measurement accuracy can be achieved.

The switch can be kept blocking while the device is switched off by the switching signal. By blocking the switch while the operating voltage is applied to the component, the measuring device is protected from the operating voltage.

Furthermore, a control unit is presented, which is designed to control the steps of the method according to the approach presented here using the switching signal.

A controller may be an electrical device that processes electrical signals, such as sensor signals, and outputs control signals in response thereto. The control unit may have one or more suitable interfaces, which may be formed in hardware and / or software. In the case of a hardware-based design, the interfaces can be part of an integrated circuit, for example, in which functions of the control unit are implemented. The interfaces may also be their own integrated circuits or at least partially consist of discrete components. In a software training, the interfaces may be software modules, for example a microcontroller in addition to other software modules are available.

• einen mit einem ersten Anschluss des Bauelements verbindbaren Schalter;
• eine mit dem Schalter verbundene Messeinrichtung zum Messen des Spannungsabfalls, wobei die Messeinrichtung mit einem zweiten Anschluss des Bauelements verbindbar ist; und
• ein Steuergerät gemäß dem hier vorgestellten Ansatz.

An apparatus for determining a voltage drop of an electronic component has the following features:

• a switch connectable to a first terminal of the device;
• a measuring device connected to the switch for measuring the voltage drop, wherein the measuring device is connectable to a second terminal of the device; and
• a controller according to the approach presented here.

The device may have a driver output stage for converting the switching signal, wherein the driver output stage is connectable to a control terminal of the component. The device may require more electrical power to switch between the conductive and the off-state than can be provided via a data line. The energy is provided by the driver output stage.

The switch can be a controllable semiconductor component. In particular, the switch may be a MOSFET. A semiconductor device can be switched very quickly and with a low energy consumption.

Furthermore, an electronic component is presented with a device according to the approach presented here, the device being a semiconductor component having a collector terminal, a gate terminal and an emitter terminal, the switch being arranged between the collector terminal and the measuring device connected to the emitter terminal, and the control unit is connected to a control line of the gate terminal. The device and the device may be integrated in an integrated circuit.

A computer program product with program code which can be stored on a machine-readable carrier such as a semiconductor memory, a hard disk memory or an optical memory and is used to carry out the method according to one of the embodiments described above if the program is installed on a computer or a device is also of advantage is performed.

• 1 ein Blockschaltbild eines elektronischen Bauelements mit einer Vorrichtung zum Bestimmen eines Spannungsabfalls gemäß einem Ausführungsbeispiel der vorliegenden Erfindung;
• 2 eine Darstellung einer elektrischen Schaltung zum Bestimmen eines Spannungsabfalls an einem Halbleiterbauelement gemäß einem Ausführungsbeispiel der vorliegenden Erfindung;
• 3 eine Darstellung von Signalverläufen zum Ansteuern eines Halbleiterbauelements und eines Schalters und eines Spannungsverlaufs an einer Messeinrichtung gemäß einem Ausführungsbeispiel der vorliegenden Erfindung;
• 4 eine Darstellung von Spannungsverläufen an einem Halbleiterbauelement und einer Messeinrichtung gemäß einem Ausführungsbeispiel der vorliegenden Erfindung;
• 5 eine Darstellung eines über einen Zeitraum erfassten Spannungsabfalls an einem elektronischen Bauteil gemäß einem Ausführungsbeispiel der vorliegenden Erfindung; und
• 6 ein Ablaufdiagramm eines Verfahrens zum Bestimmen eines Spannungsabfalls an einem Bauelement gemäß einem Ausführungsbeispiel der vorliegenden Erfindung.

Embodiments of the approach presented here are shown in the drawings and explained in more detail in the following description. It shows:

• 1 a block diagram of an electronic device with a device for determining a voltage drop according to an embodiment of the present invention;
• 2 a representation of an electrical circuit for determining a voltage drop across a semiconductor device according to an embodiment of the present invention;
• 3 a representation of signal waveforms for driving a semiconductor device and a switch and a voltage waveform at a measuring device according to an embodiment of the present invention;
• 4 a representation of voltage waveforms on a semiconductor device and a measuring device according to an embodiment of the present invention;
• 5 a representation of a detected over a period of voltage drop across an electronic component according to an embodiment of the present invention; and
• 6 a flowchart of a method for determining a voltage drop across a device according to an embodiment of the present invention.

In the following description of preferred embodiments of the present invention, the same or similar reference numerals are used for the elements shown in the various figures and similarly acting, wherein a repeated description of these elements is omitted.

1 shows a block diagram of an electronic component 100 with a device 102 for determining a voltage drop 104 according to an embodiment of the present invention. The component 100 Here is a controllable switch 100 that by a switching signal 106 between an electrically conductive state and an electrically blocking state is switchable. For example, the device 100 a switch of an inverter circuit. The voltage drop 104 is detected in the electrically conductive state. This is the device 102 parallel to the component 100 connected. The device 102 has a switch 108 , a measuring device 110 and a controller 112 on. The switch is with a first connection 114 of the component 100 connected. The measuring device 110 is between the switch 108 and a second port 116 arranged of the component. The control unit 112 controls the switch 108 and the measuring device 110 using the switching signal 106 with a control signal 118 and a measurement signal 120 at. In response to the control signal 118 turns the switch 108 between an electrically conductive state and an electrically blocking state. In response to the measurement signal 120 captures the measuring device 110 one the voltage drop 104 representing voltage value 122 , After the switching signal 106 the component 100 the switch is turned on 108 through the control signal 118 switched electrically conductive. When the switch 108 is switched electrically conductive, by the measuring signal 120 a measurement of the voltage value 122 triggered. Subsequently, the switch 108 through the control signal 118 switched again electrically blocking. Locking the switch 108 takes place before the device 100 through the switching signal 106 is switched off.

2 shows a representation of an electrical circuit 102 for determining a voltage drop UCE 104 to a semiconductor device T1 100 according to an embodiment of the present invention. The semiconductor device T1 100 and the circuit 102 correspond essentially to the device and the device in 1 , Here is the semiconductor device 100 a power semiconductor T1 for high voltages, for example up to 1000 volts. The semiconductor device T1 100 has a collector terminal C 114, a gate terminal G and an emitter terminal E 116. The emitter terminal E 116 is connected to ground. The desk 108 is connected to the collector terminal C 114. The desk 108 is a transistor T2, in particular a MOSFET and can be referred to as decoupling MOSFET. The control unit 112 controls by the control signal 118 the gate electrode of the transistor T2 108 to turn this conductive or blocking.

The measuring device 110 is here partly in the control unit 112 integrated and has a measuring resistor RM 200 on. The measuring resistor RM 200 is connected between the transistor T2 108 and ground. About the measuring resistor RM 200 falls a measurement voltage UCE, S 202 from. The measurement voltage UCE, S 202 is triggered by the measurement process by an analog-to-digital converter of the measuring device 110 sampled and as the voltage value 122 output.

In one embodiment, the gate terminal G of the power semiconductor T1 is 100 via a gate resistor RG with a driver output stage 204 connected. The driver output stage 204 converts the switching signal 106 in a control signal for the power semiconductor T1 100. The control unit 112 picks up the switching signal 106 via a parallel tap.

The circuit 102 is via an interface 206 with a data line 208 connected. Via the data line 208 becomes the switching signal 106 received as pulse width modulation signal and the voltage value 122 provided as a data signal.

In other words shows 2 a UCE (on) measurement circuit 102 for power semiconductors 100 , The circuit presented here 102 is for an operational measurement of the collector-emitter voltage 104 designed with a significantly reduced sensor effort.

The circuit 102 can, for example, be used in power electronic systems, such as in the field of e-mobility or wind energy as a measuring circuit 102 For example, to calculate the conduction losses or the phase current during inverter operation. The circuit can also be used for monitoring the aging of the power semiconductor 100 be used.

The presented UCE (on) measuring circuit 102 enables a very accurate measurement or decoupling of the collector-emitter voltage UCE (on) 104 of a periodically switched on power semiconductor 100 during its regular switching operation in a power electronic system, such as a pulse-controlled inverter or a DC-DC converter. At the same time the measuring circuit fulfills 102 the following tasks.

In the switched-on state of the power semiconductor 100 For example, the low collector-emitter voltage UCE (on) 104 is measured at zero to five volts with a high measurement accuracy of up to one millivolt. In the off state of the power semiconductor 100 The high collector-emitter voltage UCE (off) is blocked with zero to UDC volts. In this case, the intermediate circuit voltage UDC is substantially greater than UCE (on) 104.

By decoupling the UCE (on) voltage 104 in an inverter, for example, an overcurrent protection of the power semiconductor 100 For example, be implemented for a short-circuit protection. Likewise, the collector current Ic = f (UCE (off), Tj) can be measured without additional current sensors. Furthermore, an aging monitoring of the bond connections of the power semiconductor 100 be performed.

The UCE (on) voltage 104 during inverter operation may alternatively be detected using a "decoupling diode" connected to the collector 114 of the power semiconductor 100 is attached and flows through a small measuring current. Depending on the switching state of the power semiconductor 100 this allows for measurement of the low UCE (on) voltage 104 and blocking of the high UCE (off) voltage. The achievable with these circuits UCE (on) - Measuring accuracy is for the short-circuit protection of the power semiconductor 100 sufficient.

However, if the UCE (on) voltage 104 is to be measured with high accuracy, for example for phase current measurement or aging monitoring, then the temperature-dependent forward voltage of the "decoupling diode", typically -2 mV / K, represents a non-negligible accuracy problem the "decoupling diode" can be countered with an additional temperature compensation. This greatly increases the circuit and component costs.

To avoid the Temperaturkompensationsaufwands in known "decoupling diodes" in the presented here UCE (on) -Messschaltung 102, a "decoupling MOSFET" 108 is used. As in 2 is shown, its drain terminal to the collector 114 of the power semiconductor 100 tethered. At the source connection there is a measuring resistor RM 200 over which the measuring voltage UCE, S is sampled with an AD converter. The measuring resistor 200 In this case, the drain-source resistance RDS (on) of the decoupling MOSFET 108 is chosen to be significantly larger (RM >> RDS (on)), so that its temperature characteristic leads to a negligibly small measurement error. A complex temperature compensation is not required. That at the driver circuit 204 applied PWM signal 106 is tapped in parallel and a controller 112 fed. After switching on the IGBT power semiconductor T1 100 is on the controller 112 a timer is started with the predefined waiting time tw. After its expiration, the controller switches 112 the decoupling MOSFET T2 108, so that via the resistor RM 200 a small measuring current flows and the measuring voltage UCE, S 202 approximately corresponds to the collector-emitter voltage UCE (on) 104. The negligible deviation from UCE, S 202 ≈ UCE (on) 104 results from the voltage divider made of RM much larger RDS (on) and can in the control if required 112 be corrected mathematically. This allows the decoupling MOSFET 108 an accurate and very easy-to-implement UCE (on) measurement. After the measuring voltage UCE, S 202 is measured, that is, for example, was sampled by an AD converter, the decoupling MOSFET T2 108 from the controller 112 switched off. Although this is unproblematic due to the very short time duration of the UCE measurement, in one embodiment an additional latching of the turn-on of the power semiconductor T1 100 is provided by a status message from the UCE measurement circuit 110 to the driver circuit 202 realized.

In other words shows 2 a UCE measurement circuit 102 with "decoupling MOSFET" 108 and integrated control 112 and their embedding in a driver circuit 102 for controlling an IGBT power semiconductor 100 ,

3 shows a representation of signal waveforms for driving a semiconductor device T1 and a switch T2 and a representation of a voltage waveform at a measuring device according to an embodiment of the present invention. For example, using the waveforms, the device and the switch in FIG 1 or the power semiconductor T1 and the transistor T2 in 2 be controlled. The voltage curve can drop, for example, at the measuring device or the measuring resistor. The waveforms and the voltage curve are shown in temporal correlation to each other.

The first signal waveform forms the switching signal 106 from. The switching signal 106 is a pulse width modulation signal and defines a switching state of the power semiconductor T1. In this case, the power semiconductor T1 is either turned on or turned on or turned off or turned off.

The second signal waveform forms the control signal 118 from. The control signal 118 defines a switching state of the decoupling transistor T2. In this case, the Abkoppeltransistor T2 is either turned on or turned on or turned off or turned off.

The control signal 118 is dependent on the switching signal 106 , When the switching signal 106 at a time t1 turns on the power semiconductor T1 for a pulse, after a latency time tW at a time t2, the decoupling transistor T2 by the control signal 118 switched on. While the decoupling transistor T2 is turned on, the measuring voltage UCE, measuring 202 drops at the measuring resistor. After a switch-on period, the transistor T2 is switched off again at a time t3. Between the times t2 and t3 is a sampling time tA, at which the measuring voltage UCE, measuring 202 is sampled. At a time t4 lying after the time t3, the power semiconductor T1 is also switched off again.

Here are two different modes 300 . 302 of Abkoppeltransistors T2 shown in two successive switching cycles of the power semiconductor T1. In the first mode 300 If the decoupling transistor T2 is turned on once during a pulse for a single scan, the measuring voltage UCE, measured 202 and then scanned for the rest of the pulse again switched off. In the second mode 302 For a multiple sampling during a pulse, the decoupling transistor T2 is briefly turned on several times in succession and in each case the measuring voltage 202 sampled.

Between the pulses of the power semiconductor T1 is located on the decoupling transistor T2, the reverse voltage UCE, off of the power transistor T1. Since the Abkoppeltransistor T2 is turned off, the reverse voltage is blocked by the Abkoppeltransistor T2.

In other words, in 3 2 outlines the timing of the UCE measurement circuit in FIG. 2 during the pulse-width-modulated actuation of the IGBT power semiconductor T1. At t0 = 0, T1 is in the blocking state and across the collector-emitter path there is a high blocking voltage of, for example, UCE (off) = 600V. The decoupling MOSFET T2 is deactivated and disconnects the measuring circuit from the high voltage side, which may be referred to as blocking UCE (off). At time t1, the IGBT power semiconductor T1 is turned on by the driver output stage, reducing the collector-emitter voltage to the forward voltage UCE (on) of the power semiconductor from 0 to 5V. At the same time the tw-timer of the UCE measuring circuit is started. After the expiry of the predefined waiting time tw, the controller switches on the decoupling MOSFET T2 and for the measuring voltage 202 UCE, S ≈ UCE (on). At time t3, this measurement voltage becomes 202 sampled by an AD converter and the decoupling MOSFET T2 off. The UCE measurement is complete. At time t4, the IGBT power semiconductor T1 is turned off by the driver circuit and the decoupling MOSFET T2 blocks the reverse voltage UCE (off).

As in 3 shown, with a sufficiently long off period of T2, a multiple sampling of the collector-emitter voltage UCE (on) is possible. The averaging of the samples increases the immunity of the UCE measurement circuit without additional filter effort. The elimination of these low pass filters required in conventional decoupling diodes in turn increases the dynamics of the UCE measurement and represents another advantage of the developed decoupling MOSFETs.

4 shows a representation of voltage curves 400 . 402 to a semiconductor device and a measuring device according to an embodiment of the present invention. The voltage curves 400 . 402 are doing a real circuit, such as in 2 has been recorded. The first voltage curve 400 represents the voltage UCE on the electronic component. The voltage UCE is here 500 volts when the component is switched off. When the component is turned on, the voltage UCE is only as high as the voltage drop 104 , The voltage drop 104 is determined by the internal resistance of the component and is here about two volts. The second voltage curve 402 represents the voltage UCE, S 202, which drops in the measuring device. Except for sturgeon couplings 404 When switching the power device, the voltage UCE, S 202 is approximately zero volts until the switch is switched from the off state to the on state. The switch is switched to the waiting time tW after the component conductive, then the voltage UCE, S 202 is applied to the measuring device. The voltage UCE, S 202 essentially corresponds here to the voltage drop 104 and is also about two volts. In order for the voltage UCE, S 202 to stabilize, a stabilization period tW2 is waited after the switch is turned on, until the voltage UCE, S 202 is sampled at the instant tA. Shortly after the scan, the switch is again turned off and there is again essentially no voltage on.

In 4 is the measured collector-emitter voltage UCE 104 and the collector current Ic of an FF225R12ME4 IGBT power module during a switching operation. The DC link voltage is UDC = UCE (off) = 500V. After a waiting time of tw = 4 μs, the decoupling MOSFET is switched on and the measurement voltage UCE, S 202 ≈ UCE (on) 104 is tapped off via a measuring resistor of RM = 470 Ω. After another waiting time tw2 = 16 μs, the voltage UCE, S 202 is sampled by an AD converter at time tA. The waiting time tw2 serves to ensure a steady state. It can be reduced to tw2 smaller than 1 μs.

In other words, the collector-emitter voltage UCE, S 202 is coupled out after switching on the IGBT by switching on the switch and sampled at time tA with an AD converter.

5 FIG. 12 is an illustration of a voltage drop sensed over a period of time on an electronic component according to one embodiment of the present invention. FIG. As in 4 is the voltage drop here represented by the voltage dropping in the measuring device UCE, S 202. The voltage drop is scanned over a variety of points. In the example shown here, the voltage UCE, S 202 is also sampled while the switch is turned off. The points show a course of the voltage drop over time. In this case, the voltage drop increases depending on the current flow through the component within each switching cycle up to a maximum value by 2 volts and then drops again to approximately zero volts. While the component is switched off, the voltage drop is constant at approximately zero volts.

Last shows 5 the decoupling of the measuring voltage UCE, S 202 during the switching operation of an IGBT power semiconductor within a pulse-controlled inverter with a low-frequency inverter output current with fel = 1 Hz and IAC = 200A. The described UCE measurement circuit is therefore suitable for UCE (on) measurement during regular inverter operation and thus acts as a precursor for driver circuits with extended functionality.

6 FIG. 12 shows a flow chart of a method for determining a voltage drop across a device according to an embodiment of the present invention. The method can be used on a device such as those in 1 is shown executed. The method has one step 600 of driving and one step 602 of measuring. In step 600 the driving means a switch arranged between a first terminal of the device and a measuring device connected to a second terminal of the device is driven using a switching signal for the device, the switch being turned on after the device has been turned on by the switching signal, and the switch is turned off, before the device is turned off by the switching signal. In step 602 measuring the voltage drop is measured using the measuring device, wherein the voltage drop is measured when the switch is turned on.

Characteristics of the approach presented here is the tapping of the collector-emitter voltage of a power semiconductor, such as an IGBT or MOSFETs with a switch, such as a "decoupling MOSFET" whose drain terminal is connected to the collector terminal of the power semiconductor. The source terminal is led via a measuring resistor to the emitter terminal of the power semiconductor. The switching on and off of the decoupling MOSFET is derived from the PWM signal for controlling the power semiconductor. This can be realized by a controller or directly from the driver signal.

The embodiments described and shown in the figures are chosen only by way of example. Different embodiments may be combined together or in relation to individual features. Also, an embodiment can be supplemented by features of another embodiment.

Furthermore, method steps according to the invention can be repeated as well as carried out in a sequence other than that described.

If an exemplary embodiment comprises a "and / or" link between a first feature and a second feature, this can be read so that the embodiment according to one embodiment, both the first feature and the second feature and according to another embodiment, either only the first Feature or only the second feature.

LIST OF REFERENCE NUMBERS

100

electronic component, power semiconductor

102

Device, measuring circuit

104

Voltage drop, forward voltage

106

Switching signal, PWM signal

108

Switch, decoupling MOSFET

110

measuring device

112

control unit

114

first connection, collector connection

116

second connection, emitter connection

118

control signal

120

measuring signal

122

voltage value

200

measuring resistor

202

measuring voltage

204

driver amplifier

206

interface

208

data line

300

first operating mode

302

second mode

400

first voltage curve

402

second voltage curve

404

Interference injection

600

Step of driving

602

Step of measuring

Claims (13)

A method of determining a voltage drop (104) of an electronic device (100), the method comprising the steps of: driving (600) a switch (108) using a switching signal (106) for the device (100), the switch ( 108) between a first terminal (114) of the component (100) and a measuring device (110) connected to a second terminal (116) of the component (100), the switch (108) being turned on after the component (100) has passed through Switching signal (106) has been turned on, and the switch (108) is turned off before the device (100) by the switching signal (106) is turned off; and measuring (602) the voltage drop (104) using the measuring device (110), wherein the voltage drop (104) is measured when the switch (108) is turned on. Method according to Claim 1 in which, in step (600) of the driving, the switch (108) is turned on by a waiting period later than the device (100). The method of any one of the preceding claims, wherein in step (602) of measuring, the voltage drop (104) is measured by a stabilization time later than the switch (108) is turned on. Method according to one of the preceding claims, wherein in the step (600) of driving, the switch (108) is turned off after a switching period. Method according to one of the preceding claims, in which the steps (600, 602) of the method are repeated while the component (100) is turned on. A method according to any one of the preceding claims, wherein in the step (600) of driving, the switch (108) is held off while the device (100) is turned off by the switching signal (106). A controller (112) adapted to drive the steps of the method of any one of the preceding claims using the switching signal (106). An apparatus (102) for determining a voltage drop (104) of an electronic component (100), the apparatus (102) comprising: a switch (108) connectable to a first terminal (114) of the device (100); a measuring device (110) connected to the switch (108) for measuring the voltage drop (104), wherein the measuring device (110) can be connected to a second connection (116) of the component (100); and a controller (112) according to Claim 7 , Device (102) according to Claim 8 , with a driver output stage (204) for converting the switching signal (106), wherein the driver output stage (204) is connectable to a control terminal of the component (100). Device (102) according to one of the preceding claims, in which the switch (108) is a drivable semiconductor component (108). Device (100) with a device (102) according to one of Claims 8 to 10 wherein the device (100) is a semiconductor device having a collector terminal (114), a gate terminal, and an emitter terminal (116), the switch (108) connected between the collector terminal (114) and the measuring device (110) connected to the emitter terminal (116) ), and the controller (112) is connected to a control line of the gate terminal. Computer program adapted to carry out the method according to one of the preceding claims. Machine-readable storage medium on which the computer program is based Claim 12 is stored.

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