DE102017200896A1 - Process for producing an organic semiconductor device and organic semiconductor device - Google Patents

Abstract

The invention relates to a method for producing a semiconductor component (2), in particular an organic photovoltaic element, which has a lower electrode (6), an upper electrode (4) and an active layer (8), wherein the electrically conductive connection of the two electrodes (4, 6) through the active layer (8) through a via (10) is formed by laser ablation by the lower electrode (6) with laser radiation (L) is applied and thereby material of the lower electrode (6) is thrown so the material forms the via (10). Furthermore, a corresponding semiconductor device (2) is given.

Description

The invention relates to a method for producing a semiconductor component and to a semiconductor component produced by such a method. The semiconductor component is in particular an organic photovoltaic element, in short OPV element.

Such a semiconductor device is used for example for generating electrical energy by means of sunlight. For this purpose, the semiconductor component to an active layer of a semiconductor material, in which free carriers are generated by absorption of sunlight. The active layer is typically disposed as a thin layer between an upper electrode and a lower electrode. The electrodes are also each formed as a thin layer. This results in a multi-layer structure, which may also have further layers. For example, the active layer is often additionally arranged between so-called barrier layers. In the following, therefore, such a or similar combination is summarized and simplified referred to as the active layer.

The available current and the voltage provided by the semiconductor device are dependent, among other things, on the structure of the semiconductor device. The amperage generated by a semiconductor device is essentially defined by the area covered by the semiconductor material; By contrast, the voltage is essentially defined by the band gap of the semiconductor material and, accordingly, material-dependent. In order to achieve a certain voltage, a semiconductor device therefore often has a plurality of cells, which are connected in series with one another. The upper and lower electrodes are then usually divided into mutually insulated upper and lower sub-electrodes. To produce a series connection, the upper part electrode of a first cell is then usually connected in an electrically conductive manner to the lower part electrode of a second cell. For this purpose, the layers lying between the electrodes and in particular the active layer have a number of interruptions, in which a suitable conductive material is arranged, by means of which the partial electrodes are electrically conductively connected. In this way, a via is formed between two cells, which extends from a lower part electrode to an upper part electrode through the intermediate active layer.

In principle, the use of a laser is possible for forming interruptions of the active layer. In an exemplary method, the active layer is applied to the lower electrode and then segmented by laser radiation, i. divided into subareas, which later each form a cell of the OPV element. Subsequently, the upper electrode is applied, wherein material at the same time penetrates into the generated interruptions and contacted the lower electrode. In the segmentation of the active layer, the selection of the operating parameters of the laser, such as wavelength and power, is particularly critical and in particular also material-dependent. Namely, the operating parameters have to be selected such that only the active layer is selectively processed and the lower electrode remains intact. Therefore, this method is not very flexible in the production of different semiconductor devices. Variations in the layer thickness have a direct detrimental effect on the semiconductor device produced.

In the WO 2012 072271 A1 describes a method in which first the active layer of an OPV element is segmented by means of laser radiation into individual cells and then vias are formed in order to realize a series connection of the various cells. The via is also formed by means of laser radiation. While segmentation requires ablation of material, this should be avoided when forming the via. The intensity of the laser is chosen to be correspondingly low. In the formation of the via, a modification of the material, for example, this is melted or solidified.

The invention has for its object to provide an improved method for producing a semiconductor device. In particular, the production of a via is to be simplified. Furthermore, a corresponding semiconductor device should be specified.

The object is achieved by a method with the features of claim 1 and by a semiconductor device with the features of claim 15. Advantageous embodiments, developments and variants are the subject of the dependent claims. The statements in connection with the method also apply mutatis mutandis to the semiconductor device.

The method is carried out for producing a semiconductor component, in particular an organic photovoltaic element, in short OPV element. An OPV element is particularly suitable for production by means of the specified method. In the following, therefore, without limiting the generality, a semiconductor component designed as an OPV element is assumed. The description applies mutatis mutandis to any semiconductor devices, for example for producing a Thin film solar cell, a dye cell, DSSC ("dye sensitized solar cell"), a perovskite solar cell, an organic electronic component, eg an organic photovoltaic element, short OPV element, an organic light emitting diode, short OLED, an organic field effect transistor, short OFET, a organic thin film transistor, short OTFT, an organic photodetector, short OPD, an organic solar cell, short OSC, a laser diode, a Schottky diode, a photoconductor, a photodetector or a thermoelectric device.

The semiconductor device has a lower electrode, an upper electrode and an active layer and is thus constructed overall in particular in the manner of a diode. For the electrically conductive connection of the two electrodes through the active layer, a via is formed. This is arranged correspondingly within the active layer. In other words, the via leads from one of the electrodes through the active layer to the other electrode. The via makes an electrically conductive connection between the electrodes. The via is also referred to as "interconnect".

The lower electrode preferably consists of a transparent, conductive oxide, in short TCO ("transparent conductive oxide"). The lower electrode is applied in particular to a substrate. In particular, the substrate serves for improved handling and is comparatively thick compared to the electrodes and the active layer, e.g. three orders of magnitude thicker, usually in the range between 10 and 100μm. The upper electrode is preferably made of silver. The upper electrode is printed, for example, as a grid on the active layer. The active layer is preferably made of an organic semiconductor material. This may be multi-layered and e.g. have additional barrier layers.

The via is formed by means of laser ablation. In laser ablation, a laser beam is generally applied to a workpiece, the laser radiation having such a high intensity that ablates material from the workpiece, i. is removed. The via is now formed by the laser beam is applied to the lower electrode and thereby material of the lower electrode is raised. By "thrown up" is also understood as "ablated". Other synonyms in the context of this application are in particular "stirred up", "blasted off", "detached". As a result, ablation of lower electrode material occurs. This material, more specifically, the raised or ablated material forms the via. The laser ablation thus produces a deposition, deposition or debris of material which deposits at the laser ablation site. The deposit forms a structure which extends from the lower electrode, namely in particular upwards and in the direction of the upper electrode, which is possibly later applied.

The preparation is preferably carried out in a roll-to-roll process, which is particularly simple, efficient and cost-effective, and enables particularly high quantities.

In particular, a key idea of the invention is to perform ablation on the lower electrode by means of laser radiation, i. Explicitly cause destruction of the lower electrode to form a via in a particularly simple manner. Such ablation and destruction of the lower electrode is conventionally considered disadvantageous and therefore avoided as far as possible. Usually, therefore, the operating parameters of the laser, especially the intensity of the laser radiation or its penetration depth, are selected such that only material is removed from the active layer and the lower electrode, however, as possible spared. In the case of different materials and / or layer thicknesses, a correspondingly complex adaptation of the operating parameters is then absolutely necessary. This is not the case here, because an excess of intensity is just wanted to achieve an ablation of the lower electrode, because in particular only by suitable material, namely conductive material, is released to form the via. A separate supply of material for the via is advantageously not necessary and is advantageously not.

In other words, in the present case, it has been recognized that in the deliberate destruction of the lower electrode material is released, which is then a deposit which extends into the active layer and which is advantageously used as a via and therefore used as such. The laser radiation strikes the bottom electrode at a point of impact, causing material to be thrown up. The material thrown up regularly collects as a launch around the bullet point. The deposit then serves as a via.

A particular advantage of the invention is in particular that under changed conditions with respect to material and layer thickness no adjustment of the operating parameters of the laser must be made. In particular, the penetration depth of the laser radiation is only of secondary importance. Rather, the operating parameters are chosen in particular such that in each relevant case the intensity is sufficient, an ablation of material of the lower electrode. There is no upper limit for the intensity at first. As a result, a single adjustment is advantageous in several different situations. However, an upper limit results in particular from the requirement to avoid destruction or perforation of the substrate below the lower electrode. This results in particular in an upper limit of 1 mJ for the pulse energy of the laser radiation or an energy density of about 1 to 5 MJ / m ² . However, these values are not achieved with the lasers typically used.

In addition, the requirements for the laser are particularly low, for example, no specific beam geometry is necessary, so that particularly inexpensive laser, e.g. Diode lasers, are useful and preferably also used. Incidentally, the requirements for the substrate are lower because its color, thickness and composition need not be selected with respect to the laser radiation. As a result, the production of the semiconductor device is significantly simplified.

Another particular advantage of the invention is in particular that the strength of leakage currents in the semiconductor device is significantly reduced. In particular, tests have shown that creepage currents in a semiconductor component are smaller by about one order of magnitude than in a conventional method, in which only the active layer is patterned by means of laser radiation and the lower electrode is left as intact as possible. Due to the reduced creepage currents, the semiconductor device is also particularly robust in operation at high voltage. Thus, in particular, tests have shown that semiconductor components according to the invention burn through only four times the open circuit voltage, whereas in the case of conventional semiconductor components this is already the case with three times the no-load voltage. By "high" is meant in particular a voltage in the range of 100 to 1000V, which results in particular by a corresponding interconnection of several Hableiterbauteile. With such a connection, a plurality of semiconductor components with bypass diodes are regularly protected against burn-through. A reduced leakage current and a higher voltage tolerance then advantageously lead to fewer bypass diodes having to be used in an installation with a plurality of semiconductor components than has conventionally been used.

Another particular advantage of the invention is in particular that the production process has a particularly high reproducibility, as has been shown in particular in experiments. In other words, by means of the manufacturing method, semiconductor components having the same or at least very similar properties are repeatedly produced. Variations e.g. the leakage current, the dielectric strength or the fill factor are particularly low. The high reproducibility results, in particular, from the fact that the production process, or more precisely the formation of the via contact by means of laser radiation, is largely independent of the operating parameters of the laser and the properties of the materials, in particular of local fluctuations, e.g. the layer thickness.

Another particular advantage of the invention is in particular that the manufacturing method is applicable to semi-finished products with unstructured active layer. The concrete design with regard to cell size and number of cells and the interconnection of the cells with each other will be determined later. As a result, only a semi-finished product needs to be kept available for a large number of variants of the semiconductor component. In particular, the semifinished product is a multilayer system comprising a lower electrode and an active layer, usually additionally on a substrate. The vias and the upper electrode are then formed individually. Expediently, this also takes place structuring of the active layer and in particular also of the lower electrode. The application of the active layer is then advantageously decoupled from the formation of the upper electrode.

In a preferred embodiment, the via is formed by the material forming a crater-shaped deposit around a bullet point of the laser radiation. The feedthrough is thus crater-like or tower-like and then particularly stable. The laser radiation impinges on the lower electrode, namely at the injection site, and raises material which is forced outwardly from the center of the injection site and then there, i. at the edge of the bullet point, deposited. The deposit takes place in a ring around the point of injection, so that the material thrown up forms a kind of crater. This has a height which expediently corresponds at least to the thickness of the active layer, so that contact with the upper electrode is ensured.

Preferably, the via is formed before the upper electrode is formed. The laser radiation is thus applied before the upper electrode is applied. This ensures that the upper electrode does not obscure the point of impact and that the upper electrode is still not damaged.

Advantageously, however, the active layer is broken by means of the laser radiation. A separate opening of the active layer, in particular for the purpose of forming an interruption for the via, eliminated in an advantageous manner. The same laser radiation is used, on the one hand, to ablate the active layer in the region of the subsequent via, ie to ablate it, and, on the other hand, to form the via. As a result, in particular the active layer is broken through and a hole is formed in it, in which the ablated material of the lower electrode accumulates or deposits. The production of the via is thus significantly simplified. In particular, no previous fabrication of the active layer is necessary, because this is exactly removed at the correct location when forming the via.

In a suitable embodiment, the active layer becomes continuous, i. formed flat before the via is formed. By "consistent" is meant in particular "uninterrupted". As a result, the active layer can be applied in a particularly simple and effective application method and in this way produce a semifinished product which is designed further only during the formation of the through-connection. Compared to this, more complex, structured application is avoided. In this context, "structured" application means that the active layer is not applied as a continuous layer but as a plurality of partial areas separated from one another by means of at least one interruption. The interruption is usually used in this case to prepare the formation of the via.

Particularly preferred is an embodiment in which a plurality of plated-through holes are formed, thereby simultaneously also segmenting the active layer. The production of a virtually arbitrarily shaped semiconductor device is then carried out in a simple manner, starting from a simple semifinished product, in particular with a continuous active layer. The exact subdivision of the active layer into individual cells takes place together with the formation of the vias. These then limit the individual cells accordingly. In other words, when the via is formed, segmentation of the active layer is also automatically performed.

For the final formation of the cells, however, usually a separation of the lower electrode is usually required, which is not suitable divided by the formation of the via. Even with a continuous, line-like formation of the plated through hole, usually both sides of the plated through-hole are connected to the upper electrode. However, in one embodiment simultaneous segmentation of the entire semiconductor component is achieved, in particular, by the fact that the upper electrode is aligned in the region of the beam diameter of the laser radiation.

Preferably, the via is punctiform formed by the laser radiation is applied only pointwise. This ensures that the series resistance of the semiconductor device is particularly low, which in turn improves the efficiency of the semiconductor device during operation. In addition, a particularly high geometric fill factor is achieved, i. the ratio of the area of the plated-through holes to the remaining surface of the semiconductor device is particularly low. As a result, at least for an OPV element, this leads to an increased power per area. The destruction of the lower electrode is thus not just a large area, but only locally.

Conveniently, a pulsed laser is used for punctiform formation of the via, in which the laser radiation consists of a series of successive laser pulses. By selecting a suitably high pulse energy, a single via is then preferably generated by a single laser pulse.

By "punctiform" is meant, in particular, that the laser radiation is applied pointwise, so that multiple bullet points arise, which are spatially separated from each other. The formation of a continuous line, however, is avoided. The bullet points are preferably "circular", but other geometries are conceivable and also basically suitable. The laser radiation generates in the active layer as well as in the lower electrode each a hole whose diameter is usually in the micrometer range, i. between 1μm and 1000μm. The diameter of the plated through hole is determined in particular by the beam diameter of the laser radiation and corresponds approximately to this.

Preferably, the via has a diameter in the range of 5μm to 150μm. Such dimensioning is significantly less than the dimensions of conventional vias, e.g. 200μm, and therefore results in an improved geometric fill factor, i. less dead space and more usable area, and as a result, higher performance of the semiconductor device.

In a particularly expedient embodiment, a plurality of plated-through holes are formed without overlapping in a longitudinal direction along an imaginary line. The use of multiple plated-through holes leads, on the one hand, in principle to a larger conductive cross-section and thus to improved current conduction between the two electrodes. On the other hand, a suitable segmentation of at least the active layer can also be realized by a plurality of suitably arranged plated-through holes, in which case the multiple plated-through holes along the imaginary line form a boundary between two adjacent, but separate, and thus different cells. In principle, even an elongate plated through-hole is conceivable in that the laser radiation is applied along a line in order to form a corresponding line-shaped plated-through hole and, in particular, to interrupt the active layer continuously. However, a merely repeated local and preferably pointwise, ie punctiform interruption of the active layer is completely sufficient for the formation of suitable vias. The use of a plurality of plated-through holes then has the particular advantage that less material of the active layer and of the lower electrode is destroyed than with a continuous, uninterrupted plated-through hole. The overlap-free arrangement advantageously prevents a plurality of plated-through holes from merging, so to speak, due to spatial proximity. This ensures that a single plated through hole forms its own wall and has a maximum of conductive material, whereby in particular a maximum line cross section between the electrodes is realized and thus advantageously a higher geometric fill factor is realized. In return, if the arrangement is too narrow, the plated-through holes would not form separate walls, but rather a continuous wall, with a correspondingly reduced wire cross-section.

Preferably, the plurality of vias are formed in the longitudinal direction uniformly at a longitudinal distance of at most 1mm. A lower limit for the longitudinal spacing automatically results in the case of an overlap-free arrangement through the diameter of a single plated through hole. A longitudinal distance below 1mm advantageously ensures sufficient separation of the active layer and at the same time a suitable line cross-section for current conduction.

In a suitable embodiment, a plurality of groups of plated-through holes are formed in the longitudinal direction, in which, starting from a respective one of the plated-through holes, at least one further through-hole is formed transversely, preferably perpendicularly to the longitudinal direction. Experiments have shown that with an OPV element which has groups of at least two plated-through holes, a higher power can be generated than with only individual plated-through holes. Therefore, not only a plurality of individual plated-through holes are expediently formed, but a plurality of groups of plated-through holes. In other words, vias are formed along a plurality of imaginary lines as mentioned above, these imaginary lines being close to each other and parallel to each other. The vias of a group are preferably arranged on a straight line transversely, in particular perpendicular to the longitudinal direction, i. strung together. In particular, "dense" means that two adjacent plated-through holes have a distance from each other of at most the simple diameter of a through-hole. Preferably, one group has at least 2 and at most 5 vias. In this case, an embodiment with exactly two plated-through holes is particularly preferred since tests have shown that the power gain from one to two plated-through holes is particularly great and further plated-through holes cause only a smaller increase.

Suitably, the vias of a respective group will be formed without overlap. Although an overlapping arrangement of the plated-through holes within a group is fundamentally suitable. An overlap-free arrangement, however, leads to a lower series resistance.

Advantageously, the plated-through holes of a respective group are arranged without overlapping and at a transverse distance from one another, which is smaller than a longitudinal spacing of the groups in the longitudinal direction.

The object is also achieved by a semiconductor device, which is produced by a method in one of the aforementioned embodiments. A semiconductor device manufactured according to the described method differs from other semiconductor devices in particular in that the lower electrode is intentionally locally damaged or destroyed in order to remove material from the electrode or to break it out and form a via with this material. The plated-through hole therefore consists in particular of the same material as the lower electrode and not just of the same material as the upper, usually subsequently applied electrode.

The concrete geometry of the via depends on the particular case of the concrete materials whose amount, i. E. the thickness of the individual layers, as well as the intensity of the laser radiation. However, the specific geometry is initially of secondary importance for the functionality, because what is more important is that the special production reliably produces a through-connection directly from the material of the lower electrode.

• 1 ein Halbleiterbauteil in einer Schnittansicht,
• 2 ein Halbleiterbauteil in einer Draufsicht,
• 3a-3e diverse Versuchsergebnisse,
• 4a-4d jeweils eine Anordnungsvariante für Durchkontaktierungen, und
• 5a-5b jeweils Versuchsergebnisse im Zusammenhang mit den Anordnungsvarianten aus 4a-4d.

Embodiments of the invention will be explained in more detail with reference to a drawing. Show:

• 1 a semiconductor device in a sectional view,
• 2 a semiconductor device in a plan view,
• 3a - 3e various test results,
• 4a - 4d in each case one arrangement variant for plated-through holes, and
• 5a - 5b each test results in connection with the arrangement variants from 4a - 4d ,

In 1 is schematically and partially a semiconductor device 2 shown. This is an OPV element in the present case. The semiconductor device 2 has an upper electrode 4 and a lower electrode 6 on. Between the electrodes 4 . 6 is an active layer 8th arranged here, which has an organic semiconductor material and is used for energy production by absorption of light. The electrodes 4, 6 and the active layer 8th are on a flexible substrate here 9 applied and form with this a multi-layer system. In the present embodiment, the substrate 9 made of PET, the lower electrode 6 of indium tin oxide (ITO) and the top electrode 4 silver. The active layer 8th is again a multilayer system, not shown here, consisting of a barrier layer HBL, organic semiconductor material P3HT: ZZ83: PCBM and another barrier layer HIL.

To the two electrodes 4 . 6 To connect electrically conductive with each other are several vias 10 arranged. These extend from the lower electrode 6 through the active layer 8th through to the upper electrode 4 , The vias 10 were formed as part of a special manufacturing process, in which laser radiation L is used to lower electrode material 6 , in the present case ITO, to ablate and from this a respective via 10 train. At the same time the laser radiation becomes L from above, ie through the active layer 8th through, onto the lower electrode 6 guided. This results in a bullet point 12 at which material is thrown up, which is subsequently around the bullet point 12 deposited around again and a cratered deposit 14 , also called posing, forms. In the manufacturing process is therefore for the vias 10 no separate material supplied, but material of the lower electrode 6 used. In addition, the operating parameters of the laser, which is the laser radiation L provides, uncritical and only chosen such that an ablation of the lower electrode 6 he follows. In conventional manufacturing processes, however, this is just avoided and it must be an accurate adjustment of the operating parameters, although an ablation of the active layer 8th causes, but no damage to the lower electrode 6 , The latter is here but wanted and in particular also necessary for the production of the via 10 ,

The upper electrode 4 is present only after the formation of the vias 10 applied and is not corresponding to the laser radiation L exposed.

In 2 is schematically a semiconductor device 2 shown in a plan view from above. The upper electrode 4 is not shown. Visible is the active layer 8th ; the underlying lower electrode 6 as well as the substrate 9 are not visible. In contrast, several vias are clearly visible 10 which are called holes in the active layer 10 and the lower electrode 6 are recognizable. At first, there are several, in this case five, through holes 10 in a group 16 arranged. The vias 10 a respective group 16 are arranged side by side and overlapping. Several groups 16 are in the longitudinal direction R arranged one behind the other. It is between successive groups 16 a longitudinal distance A trained, which in 2 is about 215μm. This roughly corresponds to the width B a respective group 16 , which is about 265μm here. The diameter D a single via 10 here is about 50μm.

As in 1 and 2 is clearly visible, the processing is carried out by means of the laser radiation L pointwise, ie punctiform, whereby corresponding bullet holes are generated, from which then the shown, approximately circular vias 10 result. To provide the laser radiation L In the present case, a pulsed laser is used, which correspondingly pulsed laser radiation L with a single pulse then having sufficient energy to ablate the lower electrode 4 bring about. In the embodiment shown, each of the vias 10 each produced by a pulse. This also corresponds to the preferred method of preparation. Alternatively, however, a training by means of multiple pulses is possible, which then hit accordingly at the same bullet point. It is particularly important that an ablation of the lower electrode 4 he follows.

The 3a to 3e each show experimental results relating to various parameters of a semiconductor device according to the invention 2 compared to a conventionally fabricated semiconductor device 2 , A respective graph on the left shows the result for a conventional semiconductor device 2 in which the active layer 8th by means of laser radiation L continuously, ie has been continuously removed along a line and then the resulting space when applying the upper electrode 6 with conductive material just that upper electrode 6 was filled. In each case on the right side, the result is a semiconductor device produced according to the invention 2 with pointwise vias 10 shown.

Out 3a shows that the semiconductor device according to the invention 2 a higher efficiency 18 has, that generates more energy with the same lighting, so converts photons. This results in particular due to a higher electrical fill factor 20 , as out 3b results.

3c shows that of the respective semiconductor device 2 generated voltage 22 at the same lighting and 3d shows the current 24 , 3e shows on the left axis for the top two results the leakage current 26 (Leakage current, at an applied voltage of -5V and on the right axis for the two lower results of the injection current 28 ("Injection") at an applied voltage of + 10V.

In the 4a to 4d are preferred arrangement variants for the plated-through holes 10 shown schematically. The variants of 4a, b and c show groups 16 of five, three or two vias 10 , In the variant of 4d are the vias 10 not grouped. General are the vias 10 longitudinal R arranged along an imaginary line L1, where in the variants with groups 16 According to several lines L1 are present, which are parallel to each other, so that the vias 10 a respective group 16 across, here even perpendicular to the lines L1 are arranged side by side. Longitudinal R are the vias 10 generally arranged without overlap. Within a group 16, however, an overlapping arrangement is suitable, as in the variants of 4a and b shown. In the variants of 4a and 4b the distance between two neighboring lines L1 is 50μm, in 4c against 100μm. The diameter of the vias 10 is a little less than 100μm.

Further, not shown variants are conceivable and suitable. Particularly suitable are all embodiments in which the plated-through holes 10 are each formed pointwise and in the longitudinal direction R are arranged without overlapping.

In 5a, b are experimental results to those in the 4a to 4d listed arrangement variants listed. It shows 5a the efficiency 18 a respective semiconductor device 2 and 5b the respective measured injection current 28 at an applied voltage of + 13V. In the respective graph, the left-most results for an arrangement after 4a shown, then for an arrangement after 4b , then for an arrangement after 4c and finally to the far right for an arrangement 4d ,

Out 5a it becomes clear that the training of groups 16 with several vias 10 leads to better results than the simple formation of individual vias 10 according to 4d , Out 5b it becomes clear that the arrangement according to 4b with three overlapping vias 10 per group 16 to a lower injection current 28 and thus results in a higher series resistance than in the arrangement according to 4c with two non-overlapping vias 10 per group 16 , This shows that an overlap-free arrangement leads to a higher line cross-section, as more material thrown up is generated than in the overlapping case.

LIST OF REFERENCE NUMBERS

2

Semiconductor device

4

upper electrode

6

lower electrode

8th

active layer

9

substratum

10

via

12

bullet point

14

deposit

16

group

18

efficiency

20

fill factor

22

tension

24

electricity

26

leakage

28

injection current

A

longitudinal distance

B

width

D

diameter

L

laser radiation

R

longitudinal direction

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• WO 2012072271 A1 [0005]

Claims (15)

Method for producing a semiconductor component (2), in particular an organic photovoltaic element, which has a lower electrode (6), an upper electrode (4) and an active layer (8), wherein for the electrically conductive connection of the two electrodes (4, 6) through the active layer (8) through a via (10) is formed by laser ablation by the lower electrode (6) is acted upon by laser radiation (L) and thereby material of the lower electrode (6) is thrown, so that the material of the via ( 10). Method according to the preceding claim, characterized in that the through-connection (10) is formed by the material forming a crater-shaped deposit (14) around a point of insertion (12) of the laser radiation (L). Method according to one of the preceding claims, characterized in that the through-connection (10) is formed before the upper electrode (4) is formed. Method according to one of the preceding claims, characterized in that the active layer (8) is broken by means of the laser radiation (L). Method according to one of the preceding claims, characterized in that the active layer (8) is formed continuously before the via (10) is formed. Method according to one of the preceding claims, characterized in that a plurality of plated-through holes (10) are formed and thereby at the same time also the active layer (8) is segmented. Method according to one of the preceding claims, characterized in that this is a web-fed printing process in which the electrodes (4, 6) and the active layer (8) are each printed. Method according to one of the preceding claims, characterized in that the plated-through hole (10) is punctiform in that the laser radiation (L) is applied only pointwise. Method according to one of the preceding claims, characterized in that the plated-through hole (10) has a diameter (D) in the range of 5μm to 150μm. Method according to one of the preceding claims, characterized in that a plurality of plated-through holes (10) are formed without overlapping in a longitudinal direction (R) along an imaginary line (L1). Method according to the preceding claim, characterized in that the plurality of vias (10) in the longitudinal direction (R) are formed uniformly at a longitudinal distance (A) of at most 1mm. Method according to one of the two preceding claims, characterized in that in the longitudinal direction (R) a plurality of groups (16) of plated-through holes (10) are formed by starting from a respective one of the plated-through holes (10) transversely, preferably perpendicular to the longitudinal direction (R) respectively at least one further via (10) is formed. Method according to the preceding claim, characterized in that the plated-through holes (10) of a respective group (16) are formed without overlapping. Method according to one of the two preceding claims, characterized in that the plated-through holes (10) of a respective group (16) are arranged at a transverse distance from each other, which is less than a longitudinal distance (A) of the groups (16) in the longitudinal direction (R). Semiconductor component (2), in particular an organic photovoltaic element, which is produced by a method according to one of the preceding claims.

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