DE102016124215A1 - Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby - Google Patents
Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby Download PDFInfo
- Publication number
- DE102016124215A1 DE102016124215A1 DE102016124215.2A DE102016124215A DE102016124215A1 DE 102016124215 A1 DE102016124215 A1 DE 102016124215A1 DE 102016124215 A DE102016124215 A DE 102016124215A DE 102016124215 A1 DE102016124215 A1 DE 102016124215A1
- Authority
- DE
- Germany
- Prior art keywords
- sintered
- connection
- layer
- adhesive liquid
- connection partner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83095—Temperature settings
- H01L2224/83096—Transient conditions
- H01L2224/83097—Heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Abstract
Es wird ein Verfahren zur Herstellung einer Anordnung mit einem ersten und einem zweiten Verbindungspartner vorgestellt. Die Verbindungspartner sind hierbei mittels einer Niedertemperatur-Drucksinterverbindung miteinander stoffschlüssig verbunden, wobei die Verbindungspartner jeweils eine mit dem jeweils anderen Verbindungspartner zu verbindenden Kontaktfläche aufweisen, wobei zwischen diesen Kontaktflächen eine Sintermetallschicht angeordnet ist. Ein wesentlicher Schritt dieses Verfahrens ist das Aufbringen einer Haftflüssigkeit auf der Sinterschicht, wobei die Haftflüssigkeit dazu ausgebildet ist in die Sinterschicht eindringen zu können und wobei die Haftflüssigkeitsmenge derart bemessen ist, dass sie annährend vollständig in die Sinterschicht eindringen kann. Im Anschluss daran wird der zweite Verbindungspartner auf der Haftflüssigkeit angeordnet. A method for producing an arrangement with a first and a second connection partner is presented. In this case, the connection partners are connected to one another by means of a low-temperature pressure sintered connection, the connection partners each having a contact surface to be connected to the respective other connection partner, a sintered metal layer being arranged between these contact surfaces. An essential step of this method is the application of an adhesive liquid on the sintered layer, wherein the adhesive liquid is adapted to be able to penetrate into the sintered layer and wherein the amount of adhesive liquid is sized so that it can penetrate almost completely into the sintered layer. Following this, the second connection partner is arranged on the adhesive liquid.
Description
Die Erfindung beschreibt ein Herstellungsverfahren zur Niedertemperatur-Drucksinterverbindung zweier Verbindungspartner mit jeweils zu verbindenden Kontaktflächen und eine hiermit hergestellte Anordnung.The invention describes a production method for low-temperature pressure sintering connection of two connection partners, each with contact surfaces to be connected and an arrangement produced hereby.
Aus dem Stand der Technik, beispielhaft offenbart in der
Nachteilig an diesem bekannten Verfahren ist, dass die Haftkraft der verwendeten Flüssigkeiten nicht in allen Anwendungsfällen ausreichend ist. Vorteilhaft an diesem Verfahren ist, dass die verwendeten Flüssigkeiten keinen Einfluss auf die zeitliche Durchführung des Herstellungsverfahrens haben.A disadvantage of this known method is that the adhesive force of the liquids used is not sufficient in all applications. An advantage of this method is that the fluids used have no effect on the timing of the manufacturing process.
In Kenntnis der genannten Gegebenheiten liegt der Erfindung die Aufgabe zugrunde, ein Herstellungsverfahren und eine hierdurch hergestellte Anordnung mit einer stoffschlüssigen Verbindung in Form einer Niedertemperatur-Drucksinterverbindung zweier Verbindungspartner vorzustellen, wobei die Prozesssicherheit erhöht wird und wobei gleichzeitig die Bildung von Lunkern in der Sintermetallschicht der Niedertemperatur-Drucksinterverbindung verhindert und deren typische Größe wesentlich reduziert wird.In view of the above circumstances, the invention has for its object to present a manufacturing process and a device produced thereby with a material connection in the form of a low-temperature pressure sintered connection of two connection partners, the process reliability is increased and at the same time the formation of voids in the sintered metal layer of the low temperature Prevent pressure sintered compound and their typical size is significantly reduced.
Diese Aufgabe wird erfindungsgemäß gelöst durch ein Herstellungsverfahren mit den Merkmalen des Anspruchs 1, sowie durch eine Anordnung mit den Merkmalen des Anspruchs 10. Bevorzugte Ausführungsformen sind in jeweiligen abhängigen Ansprüchen beschrieben.This object is achieved by a manufacturing method having the features of claim 1, and by an arrangement with the features of
Das erfindungsgemäße Verfahren zur Herstellung einer Anordnung mit einem ersten und einem zweiten Verbindungspartner, die mittels einer Niedertemperatur-Drucksinterverbindung miteinander stoffschlüssig verbunden sind, wobei die Verbindungspartner jeweils eine mit dem jeweils anderen Verbindungspartner zu verbindenden Kontaktfläche aufweisen, wobei zwischen diesen Kontaktflächen eine Sintermetallschicht angeordnet ist, ist gekennzeichnet durch diese aufeinander folgenden Schritte:
- a) Bereitstellen eines ersten Verbindungspartners mit einer ersten Kontaktfläche;
- b) Aufbringen einer Schicht aus einer Sintermetallpartikeln und ein Lösungsmittel aufweisenden Sinterpaste, auf die erste Kontaktfläche;
- c) Temperaturbeaufschlagung der Sinterpaste und annährend vollständiges Austreiben des Lösungsmittels unter Ausbildung der Sinterschicht;
- d) Aufbringen einer Haftflüssigkeit auf der Sinterschicht, wobei die Haftflüssigkeit dazu ausgebildet ist in die Sinterschicht eindringen zu können und wobei die Haftflüssigkeitsmenge derart bemessen ist, dass sie annährend vollständig in die Sinterschicht eindringen kann;
- e) Anordnen des zweiten Verbindungspartners derart, dass dessen zweite Kontaktfläche auf einem, auf einem Teil der Oberfläche der Sinterschicht ausgebildeten, Film der Haftflüssigkeit zu liegen kommt;
- f) Beaufschlagung der Anordnung mit Temperatur und Druck zur Ausbildung der stoffschlüssigen Niedertemperatur-Drucksinterverbindung zwischen den Verbindungspartnern, wobei die Sinterschicht zu einer Sintermetallschicht umgewandelt wird.
- a) providing a first connection partner with a first contact surface;
- b) applying a layer of a sintered metal particles and a solvent-containing sintering paste, on the first contact surface;
- c) applying temperature to the sintering paste and almost completely expelling the solvent to form the sintered layer;
- d) applying an adhesive liquid on the sintered layer, wherein the adhesive liquid is adapted to be able to penetrate into the sintered layer and wherein the amount of adhesive liquid is dimensioned such that it can almost completely penetrate into the sintered layer;
- e) arranging the second connection partner such that its second contact surface comes to lie on a film of the adhesive liquid formed on a part of the surface of the sintered layer;
- f) pressurizing the assembly with temperature and pressure to form the low-temperature, low-pressure, pressure-sensitive sintered interconnect between the bonding partners, whereby the sintered layer is converted to a sintered metal layer.
Vorteilhafterweise ist die Haftflüssigkeit als ein aromatischer Alkohol, wie vorzugsweise Benzylalkohol oder Terpineol, ausgebildet.Advantageously, the adhesive liquid is formed as an aromatic alcohol, such as preferably benzyl alcohol or terpineol.
Es ist bevorzugt, wenn die Haftflüssigkeit eine Viskosität von 5 mPas bis 250 mPas aufweist. Ebenso bevorzugt ist es, wenn die Haftflüssigkeit einen Brechungsindex von 1,41 bis 1,55 aufweist.It is preferred if the adhesive liquid has a viscosity of from 5 mPas to 250 mPas. It is likewise preferred if the adhesive liquid has a refractive index of 1.41 to 1.55.
Vorzugsweise wird im Schritt c) das Lösungsmittel zu mindestens 75%, insbesondere zu mindestens 90% und bevorzugst zu mindesten 95% ausgetrieben.Preferably, in step c), the solvent is expelled to at least 75%, in particular to at least 90% and preferably to at least 95%.
Bevorzugt beträgt im Schritt d) die Haftflüssigkeitsmenge mindestens 20 Vol% insbesondere mindestens 40 Vol% und bevorzugt mindestens 60 Vol% des Volumens der Sinterschicht.Preferably, in step d) the amount of adhesive liquid is at least 20% by volume, in particular at least 40% by volume and preferably at least 60% by volume, of the volume of the sintered layer.
Vorteilhaft ist es, wenn im Schritt e) der Teil der Oberfläche mindestens 20%, insbesondere mindestens 40% und bevorzugt mindestens 60% der gesamten Oberfläche beträgt.It is advantageous if in step e) the part of the surface at least 20%, in particular at least 40% and preferably at least 60% of the total surface area.
Besonders vorteilhaft ist es, wenn die Wartezeit zwischen dem Schritt d) und e) 5 Minuten, insbesondere 2 Minuten, besonders bevorzugt 1 Minute nicht überschreitet.It is particularly advantageous if the waiting time between step d) and e) does not exceed 5 minutes, in particular 2 minutes, particularly preferably 1 minute.
Ebenfalls vorteilhaft ist es, wenn nach Schritt e) noch eine zusätzliche Temperaturbeaufschlagung mit einer Temperatur zwischen 50°C und 200°C ohne Druckeinwirkung erfolgt.It is also advantageous if, after step e), an additional temperature is applied at a temperature between 50 ° C. and 200 ° C. without pressure.
Es wird bei diesem Verfahren bewusst in Kauf genommen, dass der Prozess einen bisher nicht bekannten zeitkritischen Teilschritt aufweist. Es muss ein zeitliches Prozessfenster eingehalten werden, wobei ein Eindringen der Haftflüssigkeit in die Sinterschicht nur insoweit erfolgen darf, dass die haftende Eigenschaft lange genug und in ausreichender Stärke auf der Oberfläche erhalten bleibt. Dies ist grundsätzlich abhängig von der Art und Ausgestaltung der beiden Verbindungspartner sowie der Dicke der Sinterschicht und jeweils nur empirisch zu ermitteln.It is deliberately accepted in this process that the process has a hitherto unknown time-critical sub-step. It must be complied with a temporal process window, wherein penetration of the adhesive liquid into the sintered layer may only be to the extent that the adhesive property is retained long enough and in sufficient strength on the surface. This is fundamentally dependent on the type and design of the two connection partners as well as the thickness of the sintered layer and in each case can only be determined empirically.
Erfindungsgemäß ausgebildet ist die mittels des oben genannte Verfahren hergestellte Anordnung mit einem ersten und einem zweiten Verbindungspartner, die mittels einer Niedertemperatur-Drucksinterverbindung miteinander stoffschlüssig verbunden sind, wobei die Verbindungspartner jeweils eine mit dem jeweils anderen Verbindungspartner zu verbindenden Kontaktfläche aufweisen, wobei zwischen diesen Kontaktflächen eine Sintermetallschicht angeordnet ist.According to the invention, the arrangement produced by means of the abovementioned method is provided with a first and a second connection partner which are materially connected to one another by means of a low-temperature pressure sintering connection, the connection partners each having a contact surface to be connected to the respective other connection partner, a contact surface between these contact surfaces Sintered metal layer is arranged.
Es kann bevorzugt sein, wenn die Sintermetallschicht homogen bezüglich der Verteilung von Lunkern ausgebildet ist. Gleichsam bevorzugt ist es, wenn die Sintermetallschicht ausschließlich Lunker mit einem Durchmesser von maximal 10 µm aufweist.It may be preferred if the sintered metal layer is formed homogeneously with respect to the distribution of voids. It is equally preferable for the sintered metal layer to have only voids with a maximum diameter of 10 μm.
Selbstverständlich können, sofern dies nicht per se ausgeschlossen ist, die im Singular genannten Merkmale, insbesondere der zweite Verbindungspartner, die Kontaktflächen, die Sinterpaste, die Sinterschicht und die Sintermetallschicht, mehrfach in den jeweiligen Verfahrensschritten oder in der damit hergestellten Anordnung vorhanden sein. Mit anderen Worten, es können auch Anordnungen hergestellt werden, bei denen mehreren zweiten Verbindungspartner gleichzeitig mit dem ersten Verbindungspartner mittels des beschriebenen Verfahrens stoffschlüssig verbunden werden.Of course, unless this is excluded per se, the features mentioned in the singular, in particular the second connection partner, the contact surfaces, the sintering paste, the sintered layer and the sintered metal layer may be present several times in the respective process steps or in the arrangement produced therewith. In other words, it is also possible to produce arrangements in which a plurality of second connection partners are connected to the first connection partner simultaneously by means of the described method.
Es versteht sich, dass die verschiedenen Ausgestaltungen der Erfindung einzeln oder in beliebigen Kombinationen realisiert sein können, um Verbesserungen zu erreichen. Insbesondere sind die vorstehend und im Folgenden genannten und erläuterten Merkmale, unabhängig ob sie im Rahmen des Herstellungsverfahrens oder der Anordnung genannt sind, nicht nur in den angegebenen Kombinationen, sondern auch in anderen Kombinationen oder in Alleinstellung einsetzbar, ohne den Rahmen der vorliegenden Erfindung zu verlassen.It is understood that the various embodiments of the invention may be implemented individually or in any combination to achieve improvements. In particular, the features mentioned above and below, regardless of whether they are mentioned in the context of the manufacturing process or the arrangement, can be used not only in the specified combinations but also in other combinations or alone without departing from the scope of the present invention ,
Weitere Erläuterung der Erfindung, vorteilhafte Einzelheiten und Merkmale, ergeben sich aus der nachfolgenden Beschreibung des in den
-
1 bis5 zeigen verschieden Stadien des erfindungsgemäßen Verfahrens. -
6 zeigt eine mit diesem erfindungsgemäßen Verfahren hergestellte erfindungsgemäße Anordnung.
-
1 to5 show different stages of the method according to the invention. -
6 shows an inventive arrangement produced by this method according to the invention.
Die erste Kontaktfläche, diejenige der Leiterbahn des Substrats, mit der der zweite Verbindungspartner in elektrisch leitenden Kontakt gebracht werden soll, weist eine, einer Niedertemperatur-Drucksinterverbindung zugängliche Oberfläche auf. Hierzu ist es bevorzugt, wenn die erste Kontaktfläche
Nach diesem Verfahrensschritt liegen somit von der Sinterpaste
Um dennoch eine Fixierung eines zweiten Verbindungspartners erreichen zu können wird, dargestellt in
Daher muss der zweiten Verbindungspartner
Aufgrund des genannten erfindungsgemäßen Verfahrens weist die entstandene stoffschlüssige Niedertemperatur-Drucksinterverbindung eine besonders hohe Qualität auf, die sich insbesondere in der geringen Anzahl von Lunkern in der hergestellten Sintermetallschicht
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- DE 102010021764 A1 [0002]DE 102010021764 A1 [0002]
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016124215.2A DE102016124215A1 (en) | 2016-12-13 | 2016-12-13 | Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016124215.2A DE102016124215A1 (en) | 2016-12-13 | 2016-12-13 | Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102016124215A1 true DE102016124215A1 (en) | 2018-06-14 |
Family
ID=62201479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102016124215.2A Pending DE102016124215A1 (en) | 2016-12-13 | 2016-12-13 | Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102016124215A1 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6823915B2 (en) * | 2000-02-29 | 2004-11-30 | Siemens Aktiengesellschaft | Heat-conducting adhesive joint with an adhesive-filled, porous heat conductor |
DE102010021764A1 (en) | 2010-05-27 | 2011-12-01 | Semikron Elektronik Gmbh & Co. Kg | Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby |
-
2016
- 2016-12-13 DE DE102016124215.2A patent/DE102016124215A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6823915B2 (en) * | 2000-02-29 | 2004-11-30 | Siemens Aktiengesellschaft | Heat-conducting adhesive joint with an adhesive-filled, porous heat conductor |
DE102010021764A1 (en) | 2010-05-27 | 2011-12-01 | Semikron Elektronik Gmbh & Co. Kg | Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby |
DE102010021764B4 (en) * | 2010-05-27 | 2014-09-25 | Semikron Elektronik Gmbh & Co. Kg | Method for low-temperature pressure sintering of two connection partners |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102010021764B4 (en) | Method for low-temperature pressure sintering of two connection partners | |
DE69936008T2 (en) | Ceramic capacitor | |
DE102014213083B4 (en) | Bond structure with metal nanoparticles and bonding process using metal nanoparticles | |
DE602004008685T2 (en) | Composite material and method of making the same | |
DE3414065A1 (en) | Configuration comprising at least one electronic component fixed on a substrate, and process for fabricating a configuration of this type | |
DE102011078582A1 (en) | Method for producing structured sintered layers and semiconductor component with structured sintered layer | |
DE102012207652A1 (en) | Two-stage process for joining a semiconductor to a substrate with silver-based compound material | |
EP3231261A1 (en) | Circuit board having an asymmetric layer structure | |
DE19646369A1 (en) | Manufacturing ceramic multilayer circuit of green ceramic foils | |
DE102007022337A1 (en) | Sintered power semiconductor substrate and manufacturing method thereof | |
DE1956501B2 (en) | Integrated circuit arrangement | |
DE19646441A1 (en) | Electrical resistance and process for its manufacture | |
DE102008041061A1 (en) | Piezoelectric layer element for fuel injection device of internal combustion engine, has separating section, which separates part of piezo inactive region into two parts, when piezoelectric layer element is driven | |
DE1279201B (en) | Semiconductor device | |
DE102010001666A1 (en) | Electrical or electronic composite component e.g. junction FET (JFET) has connection layer and interlayer whose active compound is arranged on attaching layers along opposite side of sinter layers | |
DE102008034946B4 (en) | Production method of a noble metal compound | |
DE102016124215A1 (en) | Process for the low-temperature pressure sintering connection of two connection partners and arrangement produced thereby | |
DE102014220204A1 (en) | Method for producing a solder joint and component assembly | |
DE102015211852A1 (en) | Multilayer board and method for its production | |
DE102009024371A1 (en) | Method for producing a converter arrangement with cooling device and converter arrangement | |
DE102007022338B4 (en) | Manufacturing method for a power semiconductor device with metal contact layer | |
DE1465748A1 (en) | Process for the production of hermetically encapsulated components, in particular integrated circuits with a sandwich-like structure | |
EP2498283A2 (en) | Method for manufacturing a power-semiconductor substrate | |
DE102015107712B3 (en) | Method for producing a circuit carrier | |
DE102016226089A1 (en) | Method for producing a solder joint and metal paste |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R016 | Response to examination communication |