DE102015218369A1 - Method for producing a leadframe module and leadframe module - Google Patents
Method for producing a leadframe module and leadframe module Download PDFInfo
- Publication number
- DE102015218369A1 DE102015218369A1 DE102015218369.6A DE102015218369A DE102015218369A1 DE 102015218369 A1 DE102015218369 A1 DE 102015218369A1 DE 102015218369 A DE102015218369 A DE 102015218369A DE 102015218369 A1 DE102015218369 A1 DE 102015218369A1
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- Prior art keywords
- lead frame
- components
- leadframe
- arrangement
- module
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- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
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- H01L2924/19042—Component type being an inductor
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
Bei dem Verfahren zur Herstellung eines Leiterrahmenmoduls mit einem Leiterrahmen und zumindest zwei oder mehreren an den Leiterrahmen galvanisch angebundenen Bauelementen werden die zumindest zwei Bauelemente in einer Anordnung angeordnet und der Leiterrahmen wird an die Anordnung gesintert. Das Leiterrahmenmodul weist einen Leiterrahmen und zumindest zwei oder mehreren Bauelemente auf. Bei dem Leiterrahmenmodul ist der Leiterrahmen an die Bauelemente gesintert und/oder geklebt und/oder gelötet und/oder kraftbeaufschlagt. Es ist vorzugsweise nach einem Verfahren wie oben genannt hergestellt.In the method for producing a leadframe module having a leadframe and at least two or more components galvanically connected to the leadframe, the at least two components are arranged in an array and the leadframe is sintered to the array. The leadframe module has a leadframe and at least two or more components. In the leadframe module, the leadframe is sintered and / or glued and / or soldered and / or powered by force to the components. It is preferably made by a method as mentioned above.
Description
Die Erfindung betrifft ein Verfahren zur Herstellung eines Leiterrahmenmoduls mit einem Leiterrahmen und zumindest zwei oder mehreren an den Leiterrahmen galvanisch angebundenen Bauelementen sowie ein Leiterrahmenmodul. The invention relates to a method for producing a leadframe module having a leadframe and at least two or more components galvanically connected to the leadframe and a leadframe module.
Bauelemente werden typischerweise auf geeigneten Substraten, z.B. Leiterplatten, DCB-Keramiken oder Leadframes fixiert und mittels Drahtbondtechnik kontaktiert. Die Drahtbonds verbinden hierbei die Kontakte der Bauelemente mit den Kontakten des Substrates oder bei Modulen auch die Kontakte der Bauelemente untereinander. Devices are typically mounted on suitable substrates, e.g. PCBs, DCB ceramics or lead frames fixed and contacted by wire bonding technique. The wire bonds in this case connect the contacts of the components with the contacts of the substrate or, in the case of modules, also the contacts of the components with one another.
Nachteil ist der komplexe Prozessablauf und ein aufwändiges, serielles Drahtbondverfahren, bei dem eine hohe Ausbeute Voraussetzung ist. Ein hohes Risiko stellt die Kurzschlussgefahr durch sich berührende Drähte dar. Die Miniaturisierung ist daher begrenzt und eine Kühlung nach oben ist nicht möglich. Die Lastwechselfestigkeit ist insbesondere für Hochvoltapplikationen begrenzt. Zudem ist zu erwarten, dass die Chips zukünftig dünner werden, bis hin in den Picometerbereich hinein (z.B. SiC-Chips mit kleiner Kontaktierfläche) so dass die Realisierung elektrischer Verbindungen über das Drahtbonden zunehmend problematisch wird. Sehr unterschiedliche thermische Ausdehnungen führen zudem an den Kontakten und Grenzflächen bei zyklischer Temperaturbelastung zu frühen Ausfällen. Disadvantage is the complex process flow and a complex, serial wire bonding process, in which a high yield is a prerequisite. A high risk is the risk of short circuit by touching wires. The miniaturization is therefore limited and an upward cooling is not possible. The fatigue strength is limited in particular for high-voltage applications. In addition, the chips are expected to become thinner in the future, down to the picometer range (for example, SiC chips with a small contact area), so that the realization of electrical connections via wire bonding is becoming increasingly problematic. Very different thermal expansions also lead to early failures at the contacts and interfaces during cyclic temperature loading.
Es ist daher Aufgabe der Erfindung, ein verbessertes Verfahren zur Herstellung eines Leiterrahmenmoduls mit einem Leiterrahmen und zumindest zwei oder mehreren an den Leiterrahmen galvanisch angebundenen Bauelementen anzugeben. Ferner ist es Aufgabe der Erfindung, ein verbessertes Leiterrahmenmodul anzugeben. It is therefore an object of the invention to specify an improved method for producing a leadframe module with a leadframe and at least two or more components galvanically connected to the leadframe. It is another object of the invention to provide an improved lead frame module.
Diese Aufgabe der Erfindung wird mit einem Verfahren mit den in Anspruch 1 angegebenen Merkmalen sowie mit einem Leiterrahmenmodul mit den in Anspruch 10 angegebenen Merkmalen gelöst. Bevorzugte Weiterbildungen der Erfindung ergeben sich aus den zugehörigen Unteransprüchen, der nachfolgenden Beschreibung und der Zeichnung. This object of the invention is achieved by a method having the features specified in claim 1 and with a lead frame module having the features specified in
Bei dem erfindungsgemäßen Verfahren zur Herstellung eines Leiterrahmenmoduls mit einem Leiterrahmen und zumindest zwei oder mehreren an den Leiterrahmen galvanisch angebundenen Bauelementen werden die zumindest zwei Bauelemente in einer Anordnung angeordnet. Der Leiterrahmen wird, zweckmäßig zeitgleich und/oder in einem einzigen Prozessschritt, an die Anordnung angebunden.In the method according to the invention for producing a leadframe module with a leadframe and at least two or more components galvanically connected to the leadframe, the at least two components are arranged in an arrangement. The lead frame is connected, expediently at the same time and / or in a single process step, to the arrangement.
Mittels der erfindungsgemäßen elektrischen Ankontaktierung über Leiterrahmenverbindungen können komplexe, hoch zuverlässige elektronische Bauelemente mit hoher Gestaltungsfreiheit kostengünstig für alle Leistungsklassen hergestellt werden. Das erfindungsgemäße Verfahren lässt sich zur Kontaktierung sowohl aktiver als auch passiver Bauelemente einsetzen, insbesondere zur Kontaktierung von IGBTs und MOSFETs sowie Dioden im Falle einer planaren Aufbau- und Verbindungstechnologie, wie insbesondere SiPLIT aus dem Hause Siemens. Das erfindungsgemäße Verfahren stellt somit einen einfachen und stabilen Herstellungprozess mit einem hohen Automatisierungsgrad bereit, wobei zugleich eine hohe Flexibilität hinsichtlich der Abmessungen der einzelnen Bauteile und deren Dicken besteht. Insbesondere lässt sich das erfindungsgemäße Verfahren leicht durch entsprechend vorgesehene Leiterquerschnitte des Leiterrahmens an Nieder- bis Hochvoltanwendungen anpassen. Zugleich ist es mittels des erfindungsgemäßen Verfahrens möglich, eine hohe Verbindungsdichte und somit ein besonders kompaktes Leiterrahmenmodul zu erreichen. Bei dem erfindungsgemäß en Verfahren lässt sich dabei insbesondere das Risiko von Kurzschlüssen zuverlässig reduzieren. By means of the electrical Ankontaktierung invention via lead frame connections complex, highly reliable electronic components with high design freedom can be produced inexpensively for all power classes. The inventive method can be used for contacting both active and passive components, in particular for contacting IGBTs and MOSFETs and diodes in the case of a planar construction and connection technology, in particular SiPLIT from Siemens. The method according to the invention thus provides a simple and stable production process with a high degree of automation, with at the same time a high degree of flexibility with regard to the dimensions of the individual components and their thicknesses. In particular, the inventive method can be easily adapted by appropriately provided conductor cross sections of the lead frame to low to high voltage applications. At the same time, it is possible by means of the method according to the invention to achieve a high connection density and thus a particularly compact lead frame module. In the method according to the invention, in particular the risk of short-circuits can be reliably reduced.
Ferner lässt sich mittels des erfindungsgemäß vorgesehenen Leiterrahmens sowohl die anfallende Wärme als auch der erforderliche elektrische Strom flächig verteilen, etwa indem ein metallischer Leiterrahmen zur Realisierung des Leiterrahmenmoduls herangezogen wird. Geeigneterweise lässt sich somit auch eine effizientere Kühlung erreichen. Da bei dem erfindungsgemäßen Verfahren Bonddrähte nicht vorgesehen sein müssen, ist es ferner erfindungsgemäß nicht erforderlich, einen Silikonverguss zur Abdeckung solcher Bonddrähte vorzusehen. Weiterhin erlaubt es das erfindungsgemäße Verfahren bei der Herstellung des Leiterrahmenmoduls Metallflächen und folglich einen hohen Schutz vor elektrostatischen Entladungen vorzusehen. Furthermore, by means of the lead frame provided according to the invention, both the accumulated heat and the required electrical current can be distributed over a wide area, for example by using a metallic leadframe to realize the leadframe module. Suitably, therefore, a more efficient cooling can be achieved. Furthermore, since bonding wires need not be provided in the method according to the invention, it is not necessary according to the invention to provide a silicone casting for covering such bonding wires. Furthermore, the method according to the invention makes it possible to provide metal surfaces in the production of the leadframe module and consequently a high degree of protection against electrostatic discharges.
Bei einer bevorzugten Weiterbildung des erfindungsgemäßen Verfahrens wird der Leiterrahmen derart an die Anordnung angebunden, dass der Leiterrahmen, insbesondere zeitgleich in einem einzigen Prozessschritt, an zwei und ggf. vorzugsweise mindestens drei und/oder idealerweise sämtliche Bauelemente der Anordnung angebunden wird. In a preferred development of the method according to the invention, the leadframe is connected to the arrangement in such a way that the leadframe, in particular at the same time in a single process step, is connected to two and possibly at least three and / or ideally all components of the arrangement.
Vorzugsweise wird bei dem erfindungsgemäßen Verfahren der Leiterrahmen stoffschlüssig an die Anordnung angebunden. Bevorzugt wird bei dem Verfahren gemäß der Erfindung der Leiterrahmen an die Anordnung gesintert. Besonders bevorzugt werden für zwei oder drei und/oder sämtliche Bauteile der Anordnung Verbindungsstellen mit dem Leiterrahmen realisiert. Preferably, in the method according to the invention, the lead frame is firmly bonded to the arrangement. Preferably, in the method according to the invention, the lead frame is sintered to the assembly. Particularly preferred for two or three and / or all components of the arrangement connecting points are realized with the lead frame.
In einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens werden die Bauelemente jeweils zuvor mit einer sinterfähigen Schicht, insbesondere einer mit Silber und/oder Nickel und/oder Gold gebildeten Schicht, versehen. In an advantageous development of the method according to the invention, the components are each provided in advance with a sinterable layer, in particular a layer formed with silver and / or nickel and / or gold.
Alternativ oder zusätzlich und ebenfalls bevorzugt wird bei dem Verfahren gemäß der Erfindung der Leiterrahmen an die Anordnung geklebt und/oder gelötet. Alternatively or additionally and also preferably, in the method according to the invention, the leadframe is glued and / or soldered to the arrangement.
Vorzugsweise wird bei dem erfindungsgemäßen Verfahren der Leiterrahmen derart an die Anordnung angebunden, dass er an die Anordnung kraftschlüssig angebunden und/oder auf die Anordnung zu kraftbeaufschlagt wird. Preferably, in the method according to the invention, the leadframe is connected to the arrangement such that it is frictionally connected to the arrangement and / or subjected to force on the arrangement.
Bei dem erfindungsgemäßen Verfahren werden vorzugsweise als eines, mehrere oder sämtliche der Bauelemente eines oder mehrere Elemente der nachfolgend angegebenen Gruppe herangezogen: Halbleiterchips und/oder Leistungschips und/oder Einzelhalbleiter, insbesondere Dioden und/oder Transistoren und/oder Sensoren und/oder Aktoren und/oder passive Bauelemente, insbesondere Widerstände, Kapazitäten und/oder Induktivitäten und/oder LED-Chips. In the method according to the invention, preferably one, several or all of the components use one or more elements of the group indicated below: semiconductor chips and / or power chips and / or individual semiconductors, in particular diodes and / or transistors and / or sensors and / or actuators and / or or passive components, in particular resistors, capacitors and / or inductors and / or LED chips.
Das erfindungsgemäße Leiterrahmenmodul weist einen Leiterrahmen und zumindest zwei oder mehreren Bauelemente auf. Der Leiterrahmen ist an die Bauelemente gesintert und/oder geklebt und/oder gelötet und/oder auf die Bauelemente zu kraftbeaufschlagt. Vorzugsweise ist das Leiterrahmenmodul mit dem erfindungsgemäßen Verfahren wie oben beschrieben hergestellt. The lead frame module according to the invention has a lead frame and at least two or more components. The lead frame is sintered to the components and / or glued and / or soldered and / or force applied to the components. Preferably, the lead frame module is produced by the method according to the invention as described above.
Bevorzugt ist bei dem erfindungsgemäßen Leiterrahmenmodul der Leiterrahmen elastisch federnd an die Bauelemente angebunden. In the case of the leadframe module according to the invention, the leadframe is preferably connected elastically resiliently to the components.
Das erfindungsgemäße Leiterrahmenmodul weist vorzugsweise zumindest einen Wärmepuffer auf, welcher an den Leiterrahmen angebunden ist. The lead frame module according to the invention preferably has at least one heat buffer, which is connected to the lead frame.
Nachfolgend wird die Erfindung anhand eines in der Zeichnung dargestellten Ausführungsbeispiels näher erläutert. Es zeigen: The invention will be explained in more detail with reference to an embodiment shown in the drawing. Show it:
Das in den
Wie in
An der Kupferschicht
Die Kontaktflächen
Der Leiterrahmen
Zur Herstellung des Leiterrahmenmoduls
Es versteht sich, dass in weiteren Ausführungsbeispielen, welche im Übrigen dem dargestellten Ausführungsbeispiel entsprechen, nicht lediglich zwei Bauteile
In weiteren Ausführungsbeispielen sind die Bauelemente
Die Vorsprünge
Von den integrierten Bauelementen
Zur Kontaktierung der Leistungskontakte
Fern den Leistungskontakten
Das Leiterrahmenmodul wie oben beschreiben weist zudem eine Umhausung
Claims (12)
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DE102015218369.6A DE102015218369A1 (en) | 2015-09-24 | 2015-09-24 | Method for producing a leadframe module and leadframe module |
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DE102015218369.6A DE102015218369A1 (en) | 2015-09-24 | 2015-09-24 | Method for producing a leadframe module and leadframe module |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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NL2021292A (en) * | 2017-07-14 | 2019-01-25 | Shindengen Electric Mfg | Electronic module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100072585A1 (en) | 2008-09-25 | 2010-03-25 | Alpha & Omega Semiconductor Incorporated | Top exposed clip with window array |
DE102010050315A1 (en) | 2010-11-05 | 2012-05-10 | Danfoss Silicon Power Gmbh | Process for the production of sintered electrical assemblies and power semiconductor modules made therewith |
DE102012204159A1 (en) | 2012-03-16 | 2013-03-14 | Continental Automotive Gmbh | Power semiconductor module for controlling electric machine in e.g. motor mode, has punching lattice provided with metal strips, where covers of lattice comprise connection between surfaces of electrode with terminal surfaces |
DE102013015942A1 (en) | 2012-09-25 | 2014-03-27 | Infineon Technologies Ag | Semiconductor device with a clip contact |
-
2015
- 2015-09-24 DE DE102015218369.6A patent/DE102015218369A1/en not_active Withdrawn
Patent Citations (4)
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US20100072585A1 (en) | 2008-09-25 | 2010-03-25 | Alpha & Omega Semiconductor Incorporated | Top exposed clip with window array |
DE102010050315A1 (en) | 2010-11-05 | 2012-05-10 | Danfoss Silicon Power Gmbh | Process for the production of sintered electrical assemblies and power semiconductor modules made therewith |
DE102012204159A1 (en) | 2012-03-16 | 2013-03-14 | Continental Automotive Gmbh | Power semiconductor module for controlling electric machine in e.g. motor mode, has punching lattice provided with metal strips, where covers of lattice comprise connection between surfaces of electrode with terminal surfaces |
DE102013015942A1 (en) | 2012-09-25 | 2014-03-27 | Infineon Technologies Ag | Semiconductor device with a clip contact |
Non-Patent Citations (1)
Title |
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JP 2006-352080 A transl.pdf |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2021292A (en) * | 2017-07-14 | 2019-01-25 | Shindengen Electric Mfg | Electronic module |
US10510636B2 (en) | 2017-07-14 | 2019-12-17 | Shindengen Electric Manufacturing Co., Ltd. | Electronic module |
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