DE102014117011A1 - Organic light emitting device and method of making an organic light emitting device - Google Patents

Abstract

An organic light-emitting component is specified. The organic light emitting device has a first electrode, a first organic functional layer stack on the first electrode, a carrier generation layer stack on the first organic functional layer stack, a second organic functional layer stack on the carrier generation layer stack, and a second electrode on the second organic functional layer Layer stack on. The carrier generation layer stack has at least a first electron transporting layer and a first hole transporting layer. The first electron-transporting layer comprises a first electron-transporting matrix material and a first n-type dopant, wherein the first n-type dopant is covalently bound to the first electron-transporting matrix material and / or the first hole-transporting layer comprises a first hole-transporting matrix material and a first p-type dopant the first p-type dopant is covalently bonded to the first hole-transporting matrix material.

Description

An organic light-emitting component and a method for producing an organic light-emitting component are specified.

Organic light-emitting components, such as organic light-emitting diodes (OLED) usually have at least one electroluminescent organic layer between two electrodes, which are formed as anodes and cathodes and by means of which in the electroluminescent organic layer charge carriers, ie electrons and holes, are injected can. High-efficiency and long-life OLEDs can be produced by conductivity doping through the use of a p-i-n junction analogous to conventional inorganic light-emitting diodes. Here, the charge carriers, so the holes and electrons, injected from the p- and n-doped layers targeted in the intrinsically formed electroluminescent layer where they form excitons that lead to the emission of a photon upon radiative recombination. The higher the injected current, the higher the emitted luminance. But the stress increases with power and luminance, which shortens the OLED life. To increase the luminance and extend the lifetime, a plurality of OLEDs may be monolithically stacked on top of so-called stacked OLEDs while being electrically connected by charge generation layers (CGL). For example, a CGL consists of a highly doped p-n junction, which serves as a tunnel junction between the stacked emission layers. The prerequisite for the use of a CGL in, for example, a white OLED is a simple structure, ie few layers that can be easily processed, and the highest possible transmission in the spectral range emitted by the OLED so that absorption losses of the emitted light are avoided. Conventional stacked OLEDs with CGLs of an n- and a p-doped layer have very short lifetimes, since the n-dopants diffuse from the n-doped layer into the p-doped layer and the p-dopants from the p-doped layer diffuse into the n-doped layer. This diffusion takes place increasingly when the OLEDs are exposed to higher temperatures. So far, this problem has been solved for example by an intermediate layer as a diffusion barrier between the n- and the p-doped layer. However, these intermediate layers often have the disadvantage of relatively high absorption, which adversely affects the efficiency of the stacked OLED. These interlayers also affect the off-state appearance of an OLED. In addition, the intermediate layers are often only very limited in temperature stability, which makes the use of these OLEDs at temperatures above 80 ° C is not possible.

At least one object of certain embodiments is to provide an organic light emitting device that has increased life and efficiency. Another object is to provide a method for producing an organic light emitting device.

These objects are achieved by objects according to the independent claims. Advantageous embodiments and further developments of the objects are characterized in the dependent claims and will be apparent from the following description and the drawings.

There is provided an organic light-emitting device comprising a first electrode, a first organic functional layer stack on the first electrode, a carrier generation layer stack on the first organic functional layer stack, a second organic functional layer stack on the carrier generation layer stack, and a second electrode on the second organic functional layer stack. The carrier generation layer stack has at least a first electron transporting layer and a first hole transporting layer. The first electron-transporting layer comprises a first electron-transporting matrix material and a first n-type dopant, wherein the first n-type dopant is covalently bound to the first electron-transporting matrix material and / or the first hole-transporting layer comprises a first hole-transporting matrix material and a first p-type dopant the first p-type dopant is covalently bonded to the first hole-transporting matrix material.

In one embodiment, the first electron-transporting layer is prepared by crosslinking the first electron-transporting matrix material and the first n-type dopant, and / or the first hole-transporting layer is prepared by crosslinking the first hole-transporting matrix material and the first p-type dopant.

The crosslinking is an intermolecular crosslinking of a first hole-transporting matrix material and a first p-type dopant and / or an intermolecular crosslinking of a first electron-transporting matrix material and a first n-type dopant. By networking will the first n-type dopant is covalently bonded to the first electron-transporting matrix material and / or the first p-type dopant is covalently bound to the first hole-transporting matrix material. In the first electron-transporting layer and / or in the first hole-transporting layer, there are no or almost no molecules of the first n-dopant and / or the first p-dopant which are not bound to the first electron-transporting matrix material and / or to the first hole-transporting matrix material are.

By "on" with respect to the arrangement of the layers and layer stacks is here and below meant a basic sequence and is to be understood that a first layer is either arranged on a second layer, that the layers have a common interface so in direct mechanical and / or electrical contact with each other, or that further layers are arranged between the first layer and the second layer.

The organic functional layer stacks may each comprise layers with organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or combinations thereof. Furthermore, they can have at least one organic light-emitting layer. Suitable materials for the organic light-emitting layer are materials which have a radiation emission due to fluorescence or phosphorescence, for example Ir or Pt complexes, polyfluorene, polythiophene or polyphenylene or derivatives, compounds, mixtures or copolymers thereof. The organic functional layer stacks can furthermore each have a functional layer, which is designed as a hole transport layer, in order to allow effective hole injection into the at least one light-emitting layer. The organic functional layer stacks can furthermore each have a functional layer which is designed as an electron transport layer. In addition, the organic functional layer stacks may also have electron and / or hole blocking layers. Materials for the hole transport layers, the electron transport layers and the electron and / or hole blocking layers are known to those skilled in the art.

In an embodiment, the device comprises a substrate. The first electrode may be arranged on the substrate. The substrate may comprise, for example, one or more materials in the form of a layer, a plate, a foil or a laminate, which are selected from glass, quartz, plastic, metal and silicon wafers. Particularly preferably, the substrate glass, for example in the form of a glass layer, glass sheet or glass plate, or it consists thereof.

The two electrodes, between which the organic functional layer stacks are arranged, may for example both be translucent, so that the light generated in the at least one light-emitting layer between the two electrodes in both directions, ie in the direction of the substrate as well as in the substrate opposite direction, can be radiated. Furthermore, for example, all layers of the organic light-emitting component can be designed to be translucent, so that the organic light-emitting component forms a translucent and in particular a transparent OLED. Moreover, it may also be possible for one of the two electrodes, between which the organic functional layer stacks are arranged, to be non-translucent and preferably reflective, such that the light generated in the at least one light-emitting layer between the two electrodes is only in one Direction can be radiated through the translucent electrode. If the electrode arranged on the substrate is translucent and the substrate is also translucent, this is also referred to as a "bottom emitter", while in the case where the electrode arranged facing away from the substrate is translucent, it is referred to as "bottom emitter". top emitter "speaks.

The first and second electrodes may independently comprise a material selected from the group consisting of metals, electrically conductive polymers, transition metal oxides and transparent conductive oxides (TCO). The electrodes may also be layer stacks of several layers of the same or different metals or the same or different TCOs.

Suitable metals are, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys thereof.

Transparent conductive oxides ("TCO" for short) are transparent, conductive materials, usually metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ or In ₂ O _{3 also} include ternary metal oxygen compounds, such as Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p- or n-doped.

The organic functional layer stacks of the organic light emitting device described herein further include a carrier generation layer stack immediately adjacent. A layer sequence which is formed as a tunnel junction and which is formed by a p-n junction is described here and below as a "carrier generation layer stack". The charge carrier generation layer stack, which can also be referred to as a so-called "charge generation layer" (CGL), is designed in particular as a tunnel junction, which can be used for an effective charge separation and thus for the "generation" of charge carriers for the adjacent layers.

For example, the carrier generation layer stack may be directly adjacent to the organic functional layer stacks.

In one embodiment, the first electron-transporting layer is made by crosslinking a first electron-transporting matrix material and a first n-type dopant. The first n-type dopant has at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups. The crosslinking takes place via the at least one functional group of the n-dopant.

In one embodiment, the first hole transporting layer is made by crosslinking a first hole transporting matrix material and a first p-type dopant. The first p-type dopant has at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups. The crosslinking takes place via the at least one functional group of the p-type dopant.

The first electron-transporting layer thus produced by crosslinking of the first electron-transporting matrix material with the first n-dopant and / or in a first hole-transporting layer thus produced by crosslinking of the first hole-transporting matrix material with the first p-dopant, the dopants are firmly bound in the respective layer and become immobilized. Thus, diffusion of the first p-type dopant and the first n-type dopant into adjacent layers is prevented. As a result, the service life of the organic light-emitting component is increased, since a constant charge carrier injection into the first and the second organic functional layer stack is possible over the entire operating time.

The organic light emitting device can be used at temperatures above 80 ° C without causing loss of efficiency or a shortening of the life. For example, the organic light-emitting component is suitable for use in automobiles or outdoors.

In one embodiment, the carrier generation layer stack comprises a first electron transporting layer comprising a second electron transporting matrix material or a second electron transporting matrix material and a second n-type dopant.

In an embodiment, the carrier generation layer stack comprises a first hole transporting layer comprising a second hole transporting matrix material or a second hole transporting matrix material and a second p-type dopant.

In one embodiment, the carrier generation layer stack consists of the first electron transporting layer formed by crosslinking the first electron transporting matrix material and the first n-type dopant having at least one functional group selected from a group consisting of oxetane, epoxide, and acrylic groups comprising, and made of a first hole-transporting layer comprising a second hole-transporting matrix material and a second p-type dopant. Thus, the diffusion of the first n-type dopant into the first hole-transporting layer is inhibited. Also, the first electron-transporting layer exhibits a barrier effect for the diffusion of the second p-type dopant into the first electron-transporting layer.

In one embodiment, the carrier generation layer stack consists of the first hole transporting layer formed by crosslinking the first hole transporting matrix material and the first p-type dopant having at least one functional group selected from a group consisting of oxetane, epoxy, and acrylic groups includes, is made and from a first electron transporting Layer comprising a second electron-transporting matrix material and a second n-type dopant. Thus, the diffusion of the first p-type dopant into the first electron-transporting layer is inhibited. Also, the first hole-transporting layer exhibits a barrier effect for the diffusion of the second n-type dopant into the first hole-transporting layer.

In one embodiment, the carrier generation layer stack consists of the first electron transporting layer made of the first electron transporting matrix material and the first n-type dopant and the first hole transporting layer made of the first hole transporting matrix material and the first p-type dopant. Thus, between the first electron-transporting layer and the first hole-transporting layer, no intermediate layer is necessary as a diffusion barrier for the first n- and p-type dopants, since these are firmly bound in the respective layer by chemical bonds, so that diffusion is not or only very slightly takes place. Thus, a layer can be saved, which lowers the total thickness of the first carrier generation layer stack and thus also its light absorption and thus increases the efficiency of the organic light emitting device.

In one embodiment, the first electron-transporting layer consists of the second electron-transporting matrix material or the second electron-transporting matrix material and the second n-type dopant. In particular, the second electron-transporting matrix material is not crosslinked with the second n-dopant.

The second electron-transporting matrix material may be selected from a group comprising NET-18, 2,2 ', 2' '- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 8-hydroxyquinolinolato-lithium , 4- (Naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazole, 1,3-bis [2- (2,2'-bipyridine-o-yl) -1, 3,4-oxadiazo-5-yl] benzene, 4,7-diphenyl-1,10-phenanthroline (BPhen), 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4 -triazole, bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum, 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] 2,2'-bipyridyl, 2-phenyl-9,10-di (naphthalen-2-yl) -anthracene, 2,7-bis [2- (2,2'-bipyridine-6-yl) -1, 3,4-oxadiazo-5-yl] -9,9-dimethylfluorene, 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene, 2- naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline, 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline, tris (2,4, 6-trimethyl-3- (pyridin-3-yl) phenyl) borane, 1-methyl-2 ( 4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline, phenyldipyrenylphosphine oxides, naphthalenetetracarboxylic dianhydride and its imides, perylenetetracarboxylic dianhydride and its imides, silacyclopentadiene unit-based siloxes, and mixtures the aforementioned substances.

In one embodiment, the first electron transporting matrix material is selected from the same materials as the second electron transporting matrix material, said materials having at least one functional group selected from a group comprising oxetane, epoxide, and acrylic groups.

In one embodiment, the first electron-transporting matrix material or a portion of the first electron-transporting matrix material has at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups and is functionalized with a crosslinking initiator selected from a group which comprises sulfonium or iodonium salts. The proportion may be 0.5 to 10 mol%, preferably 0.5 to 5 mol%, particularly preferably 0.5 to 2 mol%, based on the total amount of first electron-transporting matrix material. In a preferred embodiment, the ratio of the oxetane, epoxy and / or acrylic groups to the crosslinking initiator is from 200: 1 to 10: 1.

The first electron-transporting matrix materials thus selected do not influence the electro-optical properties of the organic light-emitting component. This applies both to the free molecules and to the molecules crosslinked with the first n-dopants.

For example, the first electron transporting matrix material has one of the following formulas:

The epoxide, oxetane or acrylic groups can substitute any H atom of the aromatics. It is also possible for more H atoms to be substituted by epoxide, oxetane or acryl groups. For example, the first electron-transporting matrix material may have one of the following formulas:

If the first electron-transporting matrix material is additionally functionalized with a crosslinking initiator, it has, for example, one of the following formulas:

R ³ ₂ S ⁺ A ^- or R ³ I ⁺ A ^- can substitute any H atom of the aromatic. It can also be substituted by R ³ ₂ S ⁺ A ^- or R ³ I ⁺ A ^- several H atom of the aromatic. The radicals R ³ may be, for example, alkyl or aryl radicals. For example, R ³ may be a phenyl or methyl radical. A ^- is an anion, for example BF ₄ ^- , PF ₆ ^- , SbF ₆ ^- or 0.5 CO ₃ ^2- .

The second n-type dopant may be selected from a group

In one embodiment, the first n-type dopant is a cesium salt having at least one functional group selected from a group comprising oxetane, epoxy, and acrylic groups.

wobei R¹ und R für einen Alkyl- oder Arylrest stehen, die zumindest eine funktionelle Gruppe aufweisen, die aus einer Gruppe ausgewählt ist, die Oxetan-, Epoxid- und Acrylgruppen umfasst.For example, the cesium salt has one of the following structures

wherein R ¹ and R stand for an alkyl or aryl radical having at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups.

For example, R ^{1 is} selected from a group comprising methyl, ethyl, propyl, butyl, 1,2-phenylene, 1,3-phenylene, 1,4-phenylene and 2,6-pyridylene radicals, which have at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups.

For example, R is selected from a group comprising methyl, ethyl, propyl, butyl and phenyl radicals having at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups.

For example, the cesium salt has one of the following formula:

The epoxide groups can substitute for any H atom attached to the aryl radical. It is also possible that two H atoms are replaced by epoxide groups. Oxetane or acrylic groups can also be used instead of the epoxide groups.

The first hole-transporting matrix material may be selected from a group comprising α-NPD, NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine), beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine), N, N'-bis (phenyl) -N, N'-bis (phenyl) -benzidine), TPD ( N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine), spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) - benzidine), spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro), DMFL-TPD N, N'-bis (3-methylphenyl) -N , N'-bis (phenyl) -9,9-dimethyl-fluorene), DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9- dimethylfluorene), DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene), DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene), spiro-TAD (2,2 ', 7,7'-tetrakis (N, N-diphenylamino) - 9,9'-spirobifluorene), 9,9-bis [4- (N, N-bis-biphenyl-4-ylamino) -phenyl] -9H- fluorene, 9,9-bis [4- (N, N-bis-naphthalen-2-ylamino) -phenyl] -9H-fluorene, 9,9-bis [4- (N, N'-bis-naphthalene) 2-yl-N, N'-bis-phenyl-amino) -phenyl] -9H-fluoro, N, N'-bis (phenanthren-9-yl) -N, N'-bis (phenyl) -benzidine, 2 , 7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spirobifluorene, 2,2'-bis [N, N-bis (biphenyl) 4-yl) amino] 9,9-spiro-bifluorene, 2,2'-bis (N, N-di-phenylamino) 9,9-spiro-bifluorene, di- [4- (N, N-ditolyl -amino) -phenyl] cyclohexane, 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene, N, N, N', N'-tetra-naphthalene-2 yl-benzidine and mixtures of these compounds, said materials having at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups. The first hole-transporting matrix materials selected in this way do not influence the electro-optical properties of the organic light-emitting component. This applies to both the free molecules and to the molecules crosslinked with the first p-type dopants.

In one embodiment, the first hole transporting matrix material or a portion of the first hole transporting matrix material has at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups and is functionalized with a crosslinking initiator selected from a group which comprises sulfonium or iodonium salts. The proportion may be 0.5 to 10 mol%, preferably 0.5 to 5 mol%, particularly preferably 0.5 to 2 mol%, based on the total amount of first hole-transporting matrix material.

The first hole-transporting matrix material may have one of the following formulas:

The epoxide, oxetane or acrylic groups can substitute any H atom of the aromatics. It is also possible for more H atoms to be substituted by epoxide, oxetane or acryl groups. For example, the first hole-transporting matrix material may have one of the following formulas:

If the first hole-transporting matrix material is additionally functionalized with a crosslinking initiator, it has, for example, one of the following formulas:

R ³ ₂ S ⁺ A ^- or R ³ I ⁺ A ^- can substitute any H atom of the aromatics. It is also more H atoms of the aromatic through R ³ ₂ S ⁺ A ^- or R ³ I ⁺ A ^- be substituted. The radicals R ³ may be, for example, alkyl or aryl radicals. For example, R ³ may be a phenyl or methyl radical. A ^- is an anion, for example BF ₄ ^- , PF ₆ ^- , SbF ₆ ^- or 0.5 CO ₃ ^2- .

In one embodiment, the first p-type dopant is a Lewis acidic compound having at least one functional group selected from the group consisting of oxetane, epoxy, and acrylic groups.

The first p-type dopant may be selected from a group consisting of (I) pFBz, Bi (III) pFBz, F4-TCNQ, NDP-2, NDP-9, zinc phthalocyanine comprises MoO _x, WO _x, VO _x, Kupferbenzoate such as Cu wherein said materials have at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups. The first p-type dopant may preferably be selected from a group comprising copper benzoates such as Cu (I) pFBz, Bi (III) pFBz, F4-TCNQ, NDP-2, NDP-9, zinc phthalocyanine, said materials having at least one functional Having group selected from a group comprising oxetane, epoxy and acrylic groups.

In one embodiment, the first hole-transporting layer consists of the second hole-transporting matrix material or the second hole-transporting matrix material and the second p-type dopant. In particular, the second hole-transporting matrix material is not crosslinked with the second p-type dopant.

The second p-type dopant may be selected from a group consisting of MoO _x, WO _x, VO _x, Cu (I) pFBz, Bi (III) pFBz, F4-TCNQ, zinc phthalocyanine, NDP-2, and NDP. 9 For example, the second p-dopant is V ₂ O ₅ , MoO ₃ or WO ₃ .

The second hole-transporting matrix material may be selected from a group comprising α-NPD, NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine), beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine), (N, N'-bis (phenyl) -N, N'-bis (phenyl) -benzidine), TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine), spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -benzidine), spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro), DMFL-TPD N, N'-bis (3-methylphenyl) - N, N'-bis (phenyl) -9,9-dimethyl-fluorene), DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9.9 dimethylfluorene), DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene), DPFL-NPB (N, N'- Bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene), spiro-TAD (2,2 ', 7,7'-tetrakis (N, N-diphenylamino) 9,9'-spirobifluorene), 9,9-bis [4- (N, N-bis-biphenyl-4-ylamino) -phenyl] -9H-fluorene, 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene, 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl- amino ) -phenyl] -9H-fluoro, N, N'-bis (phenanthren-9-yl) -N, N'-bis (phenyl) -benzidine, 2,7-bis [N, N-bis (9,9 -spiro-bifluoren-2-yl) -amino] -9,9-spiro-bifluorene, 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene, 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene, di- [4- (N, N-ditolyl-) amino) -phenyl] cyclohexane, 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene, N, N, N', N'-tetra-naphthalen-2-yl benzidine and mixtures of these compounds.

The first or second p-type impurity may be present in the first hole-transporting layer in a proportion of 0.1 to 40% by volume, preferably 0.5 to 20% by volume, and more preferably 1 to 10% by volume.

The first or second n-type dopant may be present in the first electron-transporting layer in a proportion of 0.1 to 40% by volume, preferably 0.5 to 20% by volume, and more preferably 1 to 10% by volume.

By virtue of the fact that the first electron-transporting and / or the first hole-transporting matrix material is present in excess in comparison to the first n-dopant and / or the first p-type dopant, it is possible to ensure that each or almost every molecule of the first n- and / or p-type dopant is or is crosslinked with the respective matrix material.

The first electron-transporting layer and / or the first hole-transporting layer may have a layer thickness in a range from 5 nm to 200 nm, preferably 10 nm and 120 nm, particularly preferably 30 and 80 nm.

At these layer thicknesses, the carrier generation layer stack has a transmittance greater than 80%, preferably 90%, in a wavelength range of about 400 nm to about 700 nm.

In one embodiment, the organic light emitting device comprises a third organic functional layer stack and a further carrier generation layer stack. The further carrier generation layer stack is disposed on the second functional layer stack and the third organic functional layer stack is disposed on the further carrier generation layer stack. The third organic functional layer stack may be constructed like the first or the second organic functional layer stack. The further carrier generation layer stack may be constructed and manufactured like the carrier generation layer stack.

The organic light emitting device may be formed in one embodiment as an organic light emitting diode (OLED).

The specified embodiments of the organic light-emitting component can be produced according to the following methods. All of the features of the organic light-emitting component mentioned under the method can also be features of the above-described exemplary embodiments of the organic light-emitting component.

• A) Ausbilden eines ersten organischen funktionellen Schichtenstapels auf einer ersten Elektrode,
• B) Ausbilden eines Ladungsträgererzeugungs-Schichtenstapels auf dem ersten organischen funktionellen Schichtenstapel,
• C) Ausbilden eines zweiten organischen funktionellen Schichtenstapels auf dem Ladungsträgererzeugungs-Schichtenstapel,
• D) Anordnen einer zweiten Elektrode auf dem zweiten organischen funktionellen Schichtenstapel. Verfahrensschritt B) umfasst die folgenden Verfahrensschritte: B1) Ausbilden einer ersten elektronentransportierenden Schicht, und B2) Ausbilden einer ersten lochtransportierenden Schicht.

A method for producing an organic light-emitting component is specified. The method comprises the following method steps:

• A) forming a first organic functional layer stack on a first electrode,
• B) forming a carrier generation layer stack on the first organic functional layer stack;
• C) forming a second organic functional layer stack on the carrier generation layer stack,
• D) arranging a second electrode on the second organic functional layer stack. Process step B) comprises the following process steps: B1) forming a first electron-transporting layer, and B2) forming a first hole-transporting layer.

• B11) Aufbringen eines ersten elektronentransportierenden Matrixmaterials und eines ersten n-Dotierstoffs auf dem ersten organischen funktionellen Schichtenstapel und
• B13) Vernetzen des ersten n-Dotierstoffs mit dem ersten elektronentransportierenden Matrixmaterial.

In one embodiment, method step B1) comprises the following method steps:

• B11) applying a first electron-transporting matrix material and a first n-type dopant on the first organic functional layer stack and
• B13) crosslinking of the first n-type dopant with the first electron-transporting matrix material.

• B21) Aufbringen eines ersten lochtransportierenden Matrixmaterials und eines ersten p-Dotierstoffs auf dem ersten organischen funktionellen Schichtenstapel und
• B23) Vernetzen des ersten p-Dotierstoffs mit dem ersten lochtransportierenden Matrixmaterial.

In one embodiment, method step B2) comprises the following method steps:

• B21) applying a first hole-transporting matrix material and a first p-type dopant on the first organic functional layer stack and
• B23) crosslinking of the first p-type dopant with the first hole-transporting matrix material.

• B11) Aufbringen eines ersten elektronentransportierenden Matrixmaterials und eines ersten n-Dotierstoffs auf dem ersten organischen funktionellen Schichtenstapel, wobei der erste n-Dotierstoff und/oder der erste n-Dotierstoff und das erste elektronentransportierende Matrixmaterial zumindest eine funktionelle Gruppe aufweisen, die aus einer Gruppe ausgewählt ist, die Oxetan-, Epoxid- und Acrylgruppen umfasst oder B11) Aufbringen eines zweiten elektronentransportierenden Matrixmaterials oder eines zweiten elektronentransportierenden Matrixmaterials und eines zweiten n-Dotierstoffs auf dem ersten organischen funktionellen Schichtenstapel.

In one embodiment, method step B1) comprises the following method step:

• B11) depositing a first electron-transporting matrix material and a first n-dopant on the first organic functional layer stack, wherein the first n-dopant and / or the first n-dopant and the first electron-transporting matrix material have at least one functional group selected from a group or B11) applying a second electron-transporting matrix material or a second electron-transporting matrix material and a second n-type dopant on the first organic functional layer stack.

• B13) Vernetzen des ersten n-Dotierstoffs, mit dem ersten elektronentransportierenden Matrixmaterial über die jeweils zumindest eine funktionelle Gruppe.

In one embodiment, a further method step takes place after method step B11):

• B13) crosslinking of the first n-type dopant with the first electron-transporting matrix material via the respective at least one functional group.

• B21) Aufbringen eines ersten lochtransportierenden Matrixmaterials und eines ersten p-Dotierstoffs auf dem ersten organischen funktionellen Schichtenstapel, wobei der erste p-Dotierstoff und/oder der erste p-Dotierstoff und das erste lochtransportierende Matrixmaterial zumindest eine funktionelle Gruppe aufweisen, die aus einer Gruppe ausgewählt ist, die Oxetan-, Epoxid- und Acrylgruppen umfasst, oder B21) Aufbringen eines zweiten lochtransportierenden Matrixmaterials oder eines zweiten lochtransportierenden Matrixmaterials und eines zweiten p-Dotierstoffs auf dem ersten organischen funktionellen Schichtenstapel.

In one embodiment, method step B2) comprises the following method step:

• B21) depositing a first hole-transporting matrix material and a first p-type dopant on the first organic functional layer stack, wherein the first p-type dopant and / or the first p-type dopant and the first hole-transporting matrix material have at least one functional group selected from a group or B21) applying a second hole-transporting matrix material or a second hole-transporting matrix material and a second p-type dopant to the first organic functional layer stack.

• B23) Vernetzen des ersten p-Dotierstoffs mit dem ersten lochtransportierenden Matrixmaterial über die jeweils zumindest eine funktionelle Gruppe.

In one embodiment, a further method step takes place after method step B21):

• B23) crosslinking of the first p-type dopant with the first hole-transporting matrix material via the respective at least one functional group.

In one embodiment, the crosslinking of the first n-dopant with the first electron-transporting matrix material in process step B13) and / or the crosslinking of the first p-dopant with the first hole-transporting matrix material in process step B23) is initiated by a crosslinking initiator.

In one embodiment, the crosslinking initiator is selected from a group comprising nitrogen oxides, iodonium, sulfonium and nitrosonium salts.

In one embodiment, the iodonium or sulfonium salt is bound to the first electron-transporting matrix material and / or the first hole-transporting material. It is also possible that the iodonium or sulfonium salt is only bound to a portion of the first electron-transporting matrix material and / or the first hole-transporting matrix material. In one embodiment, the iodonium or sulfonium salt is covalently bound to the first electron transporting matrix material and / or the first hole transporting material.

As iodonium and sulfonium salts here R ₂ S ⁺ A ^- or RI ⁺ A ^- may be bound to the first electron-transporting matrix material and / or the first hole-transporting material. The radicals R can be, for example, alkyl or aryl radicals. For example, R ³ may be a phenyl or methyl radical. A ^- is an anion, for example BF ₄ ^- , PF ₆ ^- , SbF ₆ ^- or 0.5 CO ₃ ^2- .

The nitrosonium salt may be, for example, NO ⁺ SbF ₆ ^- .

• B12) Temperaturerhöhung oder UV-Bestrahlung des ersten elektronentransportierenden Matrixmaterials und des ersten n-Dotierstoffs Die Maßnahmen in Verfahrensschritt B12) dienen dazu die Vernetzung zu aktivieren. Beispielsweise können Radikalkationen des ersten elektronentransportierenden Matrixmaterials und/oder des ersten n-Dotierstoffs gebildet werden. Insbesondere findet Verfahrensschritt B12) beim Einsatz von Iodonium- oder Sulfoniumsalzen als Vernetzungsinitiatoren statt.

According to one embodiment, the following method step takes place after method step B11) or after method step B13):

• B12) Temperature increase or UV irradiation of the first electron-transporting matrix material and of the first n-dopant The measures in process step B12) serve to activate the crosslinking. For example, radical cations of the first electron-transporting matrix material and / or the first n-type dopant can be formed. In particular, process step B12) takes place when using iodonium or sulfonium salts as crosslinking initiators.

• B22) Temperaturerhöhung oder UV-Bestrahlung des ersten lochtransportierenden Matrixmaterials und des ersten p-Dotierstoffs, Die Maßnahmen in Verfahrensschritt B22) dienen dazu die Vernetzung zu aktivieren. Beispielsweise können Radikalkationen des ersten lochtransportierenden Matrixmaterials und/oder des ersten p-Dotierstoffs gebildet werden. Insbesondere findet Verfahrensschritt B22) beim Einsatz von Iodonium- oder Sulfoniumsalzen als Vernetzungsinitiatoren statt.

According to one embodiment, the following method step takes place after method step B21) or after method step B23):

• B22) temperature increase or UV irradiation of the first hole-transporting matrix material and the first p-type dopant, the measures in step B22) serve to activate the crosslinking. For example, radical cations of the first hole-transporting matrix material and / or of the first p-type dopant can be formed. In particular, process step B22) takes place when using iodonium or sulfonium salts as crosslinking initiators.

In one embodiment, the temperature in process step B12) and / or B22) is increased to 120.degree. C., preferably 80.degree.

steht in dem Reaktionsschema für den ersten p- oder n-Dotierstoff oder für das erste loch- oder elektronentransportierende Matrixmaterial, der mit zumindest einer Oxetangruppe funktionalisiert ist. Y⁺A^– repräsentiert in diesem Reaktionsschema ein Iodonium- oder Sulfoniumsalz als Vernetzungsinitiator. Das dargestellte Zwischenprodukt oder das Endprodukt reagiert mit einem weiteren

Beispielsweise steht

für einen ersten n-Dotierstoff folgender Formel:

oder für einen p-Dotierstoff wie beispielsweise ein Oxetan-funktionalisiertes Kupferbenzoat.If the first p-type dopant and the first hole-transporting matrix material are functionalized with at least one oxetane group or if the first n-type dopant and the first electron-transporting matrix material are functionalized with at least one oxetane group, the following reaction takes place, for example:

in the reaction scheme stands for the first p- or n-type dopant or for the first hole- or electron-transporting matrix material which is functionalized with at least one oxetane group. Y ⁺ A ^- represents in this reaction scheme an iodonium or sulfonium salt as a crosslinking initiator. The illustrated intermediate or end product reacts with another

For example, stands

for a first n-dopant of the following formula:

or a p-type dopant such as an oxetane-functionalized copper benzoate.

The first hole-transporting matrix material may have the following formula:

For example, the first electron-transporting matrix material has the following formula:

steht in dem Reaktionsschema für den ersten p- oder n-Dotierstoff oder für das erste loch- oder elektronentransportierende Matrixmaterial, der mit zumindest einer Epoxidgruppe funktionalisiert ist. Y⁺A^– repräsentiert in diesem Reaktionsschema ein Iodonium- oder Sulfoniumsalz als Vernetzungsinitiator. Das dargestellte Zwischenprodukt oder das Endprodukt reagiert mit einem weiteren

Beispielsweise steht

für einen ersten n-Dotierstoff folgender Formel:

If the first p-dopant and the first hole-transporting matrix material are functionalized with at least one epoxide group, or if the first n-dopant and the first electron-transporting matrix material are functionalized with at least one epoxide group, the following reaction takes place, for example:

in the reaction scheme stands for the first p- or n-type dopant or for the first hole- or electron-transporting matrix material which is functionalized with at least one epoxide group. Y ⁺ A ^- represents in this reaction scheme an iodonium or sulfonium salt as a crosslinking initiator. The illustrated intermediate or end product reacts with another

For example, stands

for a first n-dopant of the following formula:

steht in dem Reaktionsschema für den ersten p- oder n-Dotierstoff oder für das erste loch- oder elektronentransportierende Matrixmaterial, der mit zumindest einer Epoxidgruppe funktionalisiert ist. Y⁺A^– repräsentiert in diesem Reaktionsschema ein Iodonium-, Sulfonium- und Nitrosoniumsalze als Vernetzungsinitiator. Das dargestellte Zwischenprodukt oder Endprodukt reagiert mit einem weiteren

Beispielsweise steht

für einen ersten n-Dotierstoff folgender Formel:

If the first p-type dopant and the first hole-transporting matrix material are functionalized with at least one acrylic group or if the first n-type dopant and the first electron-transporting matrix material are functionalized with at least one acrylic group, the following reaction takes place, for example:

in the reaction scheme stands for the first p- or n-type dopant or for the first hole- or electron-transporting matrix material which is functionalized with at least one epoxide group. Y ⁺ A ^- represents in this reaction scheme an iodonium, sulfonium and nitrosonium salts as a crosslinking initiator. The illustrated intermediate or end product reacts with another

For example, stands

for a first n-dopant of the following formula:

In one embodiment, in method step B11) the first electron-transporting matrix material and the first n-dopant, the second electron-transporting matrix material or the second electron-transporting matrix material and the second n-dopant are applied from the gas phase and / or in method step B21) become the first hole-transporting matrix material and applying the first p-type dopant, the second hole-transporting matrix material or the second hole-transporting matrix material and the second p-type dopant from the gas phase.

In one embodiment, in method step B11) the first electron-transporting matrix material and the first n-dopant, the second electron-transporting matrix material or the second electron-transporting matrix material and the second n-dopant are applied from a solution and / or in method step B21) become the first hole-transporting matrix material and applying the first p-type dopant, the second hole-transporting matrix material or the second hole-transporting matrix material, and the second p-type dopant from a solution.

In one embodiment, gases are split off during the cross-linking in process step B13) and / or B23). For example, N ₂ , NO x, O ₂ , CO and / or CO _{2 may} be released.

In one embodiment, the solvent is an organic solvent. The solvent may be polar or non-polar depending on the matrix material and dopant. For example, THF, toluene, phenol, anisole, dichloromethane or acetonitrile can be used.

In one embodiment, the at least one oxetane, epoxy or acrylic group is attached to the first n-type dopant and / or to the first electron-transporting matrix material and / or to the first p-type dopant and / or to the first hole-transporting matrix material via an alkyl group.

In one embodiment, the at least one iodonium and sulfonium salt is attached to the first electron-transporting matrix material and / or to the first hole-transporting matrix material via an alkyl group.

By linking the respective functional group via an alkyl group, the mobility or flexibility of the respective functional group is increased, which leads to a higher degree of crosslinking.

Thus, the solubility of the first n-type dopant, the first p-type dopant, the first electron-transporting matrix material and / or the first hole-transporting matrix material can be increased. In particular, this embodiment is present if, in method step B11), the first electron-transporting matrix material and the first n-type dopant are applied from a solution and / or in step B21) the first hole-transporting matrix material and the first p-type dopant are applied from a solution.

In one embodiment, the alkyl group is selected from a group comprising butyl, pentyl, hexyl and heptyl groups. Preference is given to pentyl and hexyl groups, particularly preferably hexyl groups. Further advantages, advantageous embodiments and developments emerge from the exemplary embodiments described below in conjunction with the FIGURE.

1 shows a schematic side view of an embodiment of an organic light-emitting device.

In the exemplary embodiments and figures, identical, identical or equivalent elements can each be provided with the same reference numerals. The elements shown in the figure and their proportions with each other are not to be regarded as true to scale, but individual elements, such as layers, components, components and areas, for better presentation and / or better understanding may be exaggerated.

In 1 an embodiment of an organic light emitting device is shown. This has a substrate 10 , a first electrode 20 , a first organic functional layer stack 30 , a carrier generation layer stack 40 , a second organic functional layer stack 50 , a second electrode 60 , a barrier thin film 70 as well as a cover 80 on. The first organic functional layer stack 30 includes a hole injection layer 31 , a first hole transport layer 32 , a first emission layer 33 and an electron transport layer 34 , The second organic functional layer stack 50 comprises a second hole transport layer 51 , a second emission layer 52 , a second electron transport layer 53 and an electron injection layer 54 , The carrier generation layer stack 40 comprises a first electron-transporting layer 41 and a first hole transporting layer 42 ,

The substrate 10 can serve as a carrier element and be formed for example from glass.

The device in 1 may be configured as a top or bottom emitter in various embodiments. Furthermore, it can also be set up as a top and bottom emitter, and thus be an optically transparent component, for example a transparent organic light-emitting diode.

The first electrode 20 is formed as an anode and may have as material, for example, ITO. If the device is to be designed as a bottom emitter, are substrate 10 and first electrode 20 translucent. In the event that the device is to be designed as a top emitter, the first electrode 20 preferably also be formed reflective. The second electrode 60 is formed as a cathode and may for example comprise a metal, or a TCO. Also the second electrode 60 can be formed translucent, if the device is designed as a top emitter.

The barrier thin film 70 protects the organic layers from harmful environmental materials such as moisture and / or oxygen and / or other corrosive substances such as hydrogen sulfide. This can be done with the barrier thin layer 70 comprise one or more thin layers deposited by, for example, an atomic layer deposition method and comprising, for example, one or more of alumina, zinc oxide, zirconia, titania, hafnia, lanthana, and tantalum oxide. The barrier thin film 70 also has mechanical protection in the form of the encapsulation 80 on, which is formed for example as a plastic layer and / or as a laminated glass layer, whereby, for example, a scratch protection can be achieved.

The emission layers 33 and 52 have, for example, an electroluminescent material mentioned in the general part. These can be selected either the same or different. Farther For example, charge carrier blocking layers (not shown here) may be provided between which the organic light emitting emission layers 33 and 52 are arranged.

For example, as the charge carrier blocking layer, there may be a hole blocking layer comprising 2,2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole). Further, as the charge carrier blocking layer, there may be an electron blocking layer comprising, for example, NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine).

Materials for the hole transport layers 32 and 51 , for the hole injection layer 31 , for the electron transport layers 34 and 53 as well as for the electron injection layer 54 can be selected from known materials. For example, for the hole transport layers 32 and 51 NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine).

Furthermore, for the electron transport layers 34 and 53 For example, 2,2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1-H-benzimidazole) can be used.

und einem ersten n-Dotierstoff folgender Formel

hergestellt ist und eine Dicke von 100 nm aufweist. Es ist auch möglich, dass die Oxetangruppen über eine Hexylgruppe angebunden sind. Die erste elektronentransportierende Schicht wurde wie folgt hergestellt:

• – Aufbringen einer Lösung des ersten elektronentransportierenden Matrixmaterials und des n-Dotierstoffs auf den ersten organischen funktionellen Schichtenstapel 30 in einem organischen Lösungsmittel.
• – Vernetzung des ersten elektronentransportierenden Matrixmaterials mit dem ersten n-Dotierstoff über die Oxetangruppen mit NO⁺SbF₆ ^– als Vernetzungsinitiator.

The carrier generation layer stack 40 contains in the embodiment a first electron-transporting layer 41 consisting of a first electron-transporting matrix material of the following formula

and a first n-type dopant of the following formula

is manufactured and has a thickness of 100 nm. It is also possible that the oxetane groups are attached via a hexyl group. The first electron-transporting layer was prepared as follows:

• - Applying a solution of the first electron-transporting matrix material and the n-type dopant on the first organic functional layer stack 30 in an organic solvent.
• - Crosslinking of the first electron-transporting matrix material with the first n-dopant via the Oxetangruppen with NO ⁺ SbF ₆ ^- as a crosslinking initiator.

• – Aufbringen einer Lösung des ersten lochtransportierenden Matrixmaterials und des ersten p-Dotierstoffs auf der ersten elektronentransportierenden Schicht 41 in einem organischen Lösungsmittel. Das erste lochtransportierende Matrixmaterial weist folgende Formel auf:
  

The first hole-transporting layer 42 was prepared as follows:

• - Applying a solution of the first hole-transporting matrix material and the first p-type dopant on the first electron-transporting layer 41 in an organic solvent. The first hole-transporting matrix material has the following formula:
  

• – Vernetzung des ersten lochtransportierenden Matrixmaterials mit dem ersten p-Dotierstoff über die Oxetangruppen mit NO⁺SbF₆ ^– als Vernetzungsinitiator.

The first p-type dopant is an oxetane-functionalized copper benzoate. It is also possible that the oxetane groups, the iodonium or sulfonium salt as a crosslinking initiator via a hexyl group are attached.

• - Crosslinking of the first hole-transporting matrix material with the first p-type dopant via the Oxetangruppen with NO ⁺ SbF ₆ ^- as a crosslinking initiator.

The first electron-transporting layer 41 of the carrier generation layer stack 40 may alternatively consist of a second electron-transporting matrix material and a second n-type dopant, such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and Cs ₂ CO ₃ , or the first hole-transporting layer may alternatively consist of a second hole-transporting matrix material and a second p-type dopant. The second p-type dopant may be VO _x and the second hole transporting matrix material may have the following formula:

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

Claims (15)

Organic light-emitting component comprising a first electrode ( 20 ), a first organic functional layer stack ( 30 ) on the first electrode ( 20 ), a carrier generation layer stack ( 40 ) on the first organic functional layer stack ( 30 ), a second organic functional layer stack ( 50 ) on the carrier generation layer stack ( 40 ), and a second electrode ( 60 ) on the second organic functional layer stack ( 50 ), wherein the charge carrier generation layer stack ( 40 ) at least one first electron-transporting layer ( 41 ) and a first hole-transporting layer ( 42 ), wherein - the first electron-transporting layer ( 41 ) comprises a first electron-transporting matrix material and a first n-type dopant and the first n-type dopant is covalently bound to the first electron-transporting matrix material and / or the first hole-transporting layer ( 42 ) comprises a first hole-transporting matrix material and a first p-type dopant and the first p-type dopant is covalently bonded to the first hole-transporting matrix material. The organic light emitting device of claim 1, wherein the first electron transporting layer ( 41 ) is produced by the crosslinking of the first electron-transporting matrix material and the first n-dopant and / or the first hole-transporting layer ( 42 ) is produced by the crosslinking of the first hole-transporting matrix material and the first p-type dopant. Organic light-emitting device according to claim 2, wherein the first electron-transporting layer ( 41 ) by crosslinking the first electron-transporting matrix material and the first n-type dopant having at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups. Organic light-emitting device according to claim 2 or 3, wherein the first hole-transporting layer ( 42 ) by crosslinking the first hole-transporting matrix material and the first p-type dopant having at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups. Method for producing an organic light-emitting component with the method steps A) forming a first organic functional layer stack ( 30 ) on a first electrode ( 20 ) B) forming a carrier generation layer stack ( 40 ) on the first organic functional layer stack ( 30 ), C) forming a second organic functional layer stack ( 50 ) on the carrier generation layer stack ( 40 D) arranging a second electrode on the second organic functional layer stack ( 60 ), wherein method step B) comprises the following method steps: B1) forming a first electron-transporting layer ( 41 ) and B2) forming a first hole-transporting layer ( 42 B) applying a first electron-transporting matrix material and a first n-type dopant to the first organic functional layer stack (FIG. 30 ) and B13) crosslinking of the first n-type dopant with the first electron-transporting matrix material, and / or wherein - method step B2) comprises the following method steps: B21) applying a first hole-transporting matrix material and a first p-type dopant to the first organic functional layer stack ( 30 ) and B23) crosslinking of the first p-dopant with the first hole-transporting matrix material. The method of claim 5, wherein the first n-type dopant and the first electron-transporting matrix material have at least one functional group selected from a group comprising oxetane, epoxy, and acrylic groups. The method of any of claims 5 to 6, wherein the first p-type dopant and the first hole-transporting matrix material have at least one functional group selected from a group comprising oxetane, epoxy, and acrylic groups. Method according to one of claims 5 to 7, wherein the crosslinking of the first n-type dopant with the first electron-transporting matrix material in step B13) and / or the crosslinking of the first p-type dopant with the first hole-transporting matrix material in step B23) is initiated by a crosslinking initiator and the crosslinking initiator is selected from a group comprising nitrogen oxides, iodonium, sulfonium and nitrosonium salts. A method according to the preceding claim, wherein the iodonium or sulfonium salt is bound to the first electron-transporting matrix material and / or the first hole-transporting material. Method according to one of claims 5 to 9, wherein after process step B11) the following process step takes place: B12) temperature increase or UV irradiation of the first electron-transporting matrix material and the first n-type dopant and / or after method step B21) the following method step takes place: B22) temperature increase or UV irradiation of the first hole-transporting matrix material and of the first p-type dopant. The method of any one of claims 5 to 10, wherein the first n-type dopant is a cesium salt having at least one functional group selected from a group comprising oxetane, epoxy and acrylic groups. Method according to one of claims 5 to 11, wherein in step B11) the first electron-transporting matrix material and the first n-type dopant from the gas phase are applied and / or wherein in step B21) the first hole-transporting matrix material and the first p-type dopant from the gas phase be applied. Method according to one of claims 5 to 11, wherein in step B11) the first electron-transporting matrix material and the first n-type dopant are applied from a solution and / or wherein in step B21) the first hole-transporting matrix material and the first p-type dopant from a solution be applied. Method according to one of claims 7 to 13, wherein the at least one oxetane, epoxy or acrylic group to the first n-dopant and the first electron-transporting matrix material and / or to the first p-type dopant and the first hole-transporting matrix material via an alkyl group is attached , Process according to the preceding claim, wherein the alkyl group is selected from the group comprising butyl, pentyl, hexyl and heptyl groups.

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