DE102013210594A1 - Sensor und Verfahren zum Betreiben eines Sensors - Google Patents
Sensor und Verfahren zum Betreiben eines Sensors Download PDFInfo
- Publication number
- DE102013210594A1 DE102013210594A1 DE102013210594.0A DE102013210594A DE102013210594A1 DE 102013210594 A1 DE102013210594 A1 DE 102013210594A1 DE 102013210594 A DE102013210594 A DE 102013210594A DE 102013210594 A1 DE102013210594 A1 DE 102013210594A1
- Authority
- DE
- Germany
- Prior art keywords
- gate unit
- sensor
- channel region
- channel
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 18
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 35
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- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013210594.0A DE102013210594A1 (de) | 2013-06-07 | 2013-06-07 | Sensor und Verfahren zum Betreiben eines Sensors |
| PCT/EP2014/060930 WO2014195185A1 (de) | 2013-06-07 | 2014-05-27 | Feldeffekttransistor-infrarotsensor mit beweglicher gateelektrode |
| CN201480032219.8A CN105393096B (zh) | 2013-06-07 | 2014-05-27 | 具有可活动的栅极的场效应晶体管红外传感器 |
| EP14728142.2A EP3004818A1 (de) | 2013-06-07 | 2014-05-27 | Feldeffekttransistor-infrarotsensor mit beweglicher gateelektrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013210594.0A DE102013210594A1 (de) | 2013-06-07 | 2013-06-07 | Sensor und Verfahren zum Betreiben eines Sensors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102013210594A1 true DE102013210594A1 (de) | 2014-12-11 |
Family
ID=50884895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102013210594.0A Withdrawn DE102013210594A1 (de) | 2013-06-07 | 2013-06-07 | Sensor und Verfahren zum Betreiben eines Sensors |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3004818A1 (zh) |
| CN (1) | CN105393096B (zh) |
| DE (1) | DE102013210594A1 (zh) |
| WO (1) | WO2014195185A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108885136B (zh) * | 2015-12-16 | 2021-12-24 | 米克罗森斯电子工贸有限公司 | 微测辐射热计结构 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10019408C2 (de) | 2000-04-19 | 2003-11-13 | Bosch Gmbh Robert | Feldeffekttransistor, insbesondere zur Verwendung als Sensorelement oder Beschleunigungssensor, und Verfahren zu dessen Herstellung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005208582A (ja) * | 2003-12-24 | 2005-08-04 | Sanyo Electric Co Ltd | 光センサおよびディスプレイ |
| TWI303714B (en) * | 2004-10-14 | 2008-12-01 | Toshiba Kk | Nucleic acid detecting sensor, nucleic acid detecting chip, and nucleic acid detecting circuit |
| US8097850B2 (en) * | 2006-05-25 | 2012-01-17 | Panasonic Electric Works Co., Ltd. | Infrared sensor |
| US7804143B2 (en) * | 2008-08-13 | 2010-09-28 | Intersil Americas, Inc. | Radiation hardened device |
| US8716768B2 (en) * | 2011-10-20 | 2014-05-06 | Omnivision Technologies, Inc. | Transistor with self-aligned channel width |
-
2013
- 2013-06-07 DE DE102013210594.0A patent/DE102013210594A1/de not_active Withdrawn
-
2014
- 2014-05-27 WO PCT/EP2014/060930 patent/WO2014195185A1/de active Application Filing
- 2014-05-27 CN CN201480032219.8A patent/CN105393096B/zh not_active Expired - Fee Related
- 2014-05-27 EP EP14728142.2A patent/EP3004818A1/de not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10019408C2 (de) | 2000-04-19 | 2003-11-13 | Bosch Gmbh Robert | Feldeffekttransistor, insbesondere zur Verwendung als Sensorelement oder Beschleunigungssensor, und Verfahren zu dessen Herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3004818A1 (de) | 2016-04-13 |
| CN105393096A (zh) | 2016-03-09 |
| CN105393096B (zh) | 2017-07-18 |
| WO2014195185A1 (de) | 2014-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |