DE102012217681A1 - Optoelectronic component and method for operating an optoelectronic component - Google Patents

Abstract

The invention relates to an optoelectronic component (101), comprising: a semiconductor layer sequence (103) having a multiple quantum well structure (105, 301), wherein the multiple quantum well structure (105, 301) comprises a first quantum well (107, 303) having a first bandgap energy and - a second quantum well (109, 305) having a second bandgap energy greater than the first bandgap energy - the first quantum well (107, 303) and the second quantum well (109, 305) adjacent to wherein a difference between the first and the second bandgap energy is selected such that charge carriers (319, 321) formed by excitation of the first quantum well (107, 303) can use energy from a loss process, in particular an Auger process to enter the second quantum well (109, 305) to radiantly recombine in the second quantum well (109, 305). The invention further relates to a method for operating the optoelectronic component (101).

Description

The invention relates to an optoelectronic component. The invention further relates to a method for operating an optoelectronic component. The invention further relates to a computer program.

From the publication WO 01 / 39282A2 For example, an optical semiconductor device having a multiple quantum well structure is known.

The object underlying the invention can be seen to provide an improved optoelectronic device.

The object underlying the invention can also be seen in providing a corresponding method for operating an optoelectronic device.

These objects are achieved by means of the subject matter of the independent claims. Advantageous embodiments are the subject of each dependent dependent claims.

In one aspect, an optoelectronic device is provided. The component comprises a semiconductor layer sequence with a multiple quantum well structure. The multiple quantum well structure has a quantum well with a first bandgap energy. Furthermore, the multiple quantum well structure comprises a second quantum well with a second bandgap energy. Here, the second bandgap energy is greater than the first bandgap energy. The first quantum well and the second quantum well are formed adjacent to each other.

A difference between the first and the second bandgap energy is chosen such that charge carriers formed by excitation of the first quantum well, in particular Auger carriers, can use energy from a loss process, in particular an Auger process, to enter the second quantum well in order to enter the second quantum well second quantum well to recombine radiantly. This means, in particular, that the charge carriers, in particular the Auger charge carriers, have an energy which they have absorbed through the loss process, in particular the Auger process.

According to a further aspect, a method for operating the optoelectronic component is provided. In this case, the first quantum well is excited so that charge carriers formed by the excitation of the first quantum well, in particular Auger carriers, can use energy from a loss process, in particular an Auger process, to enter the second quantum well to radiantly recombine in the second quantum well.

The following remarks are formulated in relation to auger carriers and augmentation processes. This is not limiting. As far as concrete Auger carriers are described having an energy from an Augerprozeß, this is always carriers generally having an energy from a loss process meant. A specific numbering, such as first, second, third, of a quantum well is not necessarily equivalent to a corresponding position of the quantum well within the multiple quantum well structure, but generally serves to differentiate the individual quantum wells.

In particular, the invention therefore encompasses the idea of reusing or recycling auger carriers or charge carriers which are formed or formed upon excitation of the first quantum well, by virtue of the selected difference between the first and second bandgap energy in the second quantum well can reach, so that these Auger carriers can then radiantly recombine in the second quantum well in an advantageous manner. This means, in particular, that the additional energy of the eye-load carriers beyond the band edge of the first quantum well or the charge carrier is generally not lost without radiation, but can be recycled for radiation generation.

During the excitation of a quantum well of a multiple quantum well structure of an optoelectronic component, Auger processes usually occur. Through these, the Augerladungsträger be formed. Thus, the extra energy of the Auger carriers beyond the band edge of the excited quantum well is usually lost for radiation generation or light generation by relaxation to the corresponding band edge of the excited quantum well. This means that due to the Auger processes taking place in the known components, part of the energy supplied to the optoelectronic component for the radiation and light generation is always lost. In known multiple quantum well structures, the Auger carriers relax, especially with the emission of phonons, at band edges of the corresponding quantum wells, so that their energy is converted into heat.

For example, the theoretical calculations underlying these processes are in the article "Indirect Auger recombination as a cause of efficiency in nitride light-emitting diodes" by E. Kioupakis, P. Rinke, KT Delaney, and CG van der Walle, published in Appl. Phys. Lett. 98, 161107 (2011) , described.

In the optoelectronic component according to the invention, however, these eye charge carriers can be used for a radiative recombination process. This is because a difference between the first and the second band gap energy of the two quantum wells is selected such that at least a part of the Auger carriers, in particular all, can get into the second quantum well. This means, in particular, that due to the spatial distribution of a probability of residence of the eye carriers and the possibility of scattering processes, at least some of the eye carriers can enter bound higher energy states of the second quantum well and radiantly recombine from this.

In the context of the present invention, charge carriers comprise, in particular, electrons and holes. This means, in particular, that the auger carriers can be Auger electrons and / or Auger holes.

According to one embodiment it can be provided that a barrier layer is formed between the first quantum well and the second quantum well, which has a barrier band gap energy that is greater than the second band gap energy. The provision of such a barrier layer advantageously reduces a probability that a charge carrier in a bound state of the second quantum well can reach the energetically favorable first quantum well, whereby the potential energy gained would be lost again. An efficiency of the optoelectronic component is thus advantageously increased.

According to another embodiment, it can be provided that a further barrier layer is formed adjacent to a side of the first quantum well remote from the second quantum well, wherein the further barrier layer has a further barrier band gap energy that is greater than the second bandgap energy. As a result, a probability of trapping the charge carriers by the higher energy second quantum well is advantageously increased. As a result, an efficiency of the optoelectronic component is advantageously increased.

Adjacent to each other in the sense of the present invention comprises in particular the case that the first quantum well and the second quantum well are arranged immediately adjacent to one another. Immediately adjacent in the sense of the present invention means in particular that there is no further quantum well between the first quantum well and the second quantum well. A space between the two quantum wells is thus in particular free of quantum dots. In this case, it is generally the case that the probability that charge carriers can pass from the first quantum well into the second quantum well is greater, the closer the two quantum wells are to one another. This means in particular that with a smaller distance between the two quantum wells, the probability is greater compared to a larger distance between the two quantum wells.

According to a further embodiment it can be provided that a third quantum well is formed adjacent to a side of the second quantum well remote from the first quantum well, in particular is formed in mirror image to the first quantum well. This third quantum well can be excited in an advantageous manner, so that Auger carriers are formed, but then not lost without radiation, but can get into the second quantum well to radiantly recombine from this. In particular, the third quantum well is formed analogously to the first quantum well. In particular, a distance between the third quantum well and the second quantum well is equal to the distance between the first quantum well and the second quantum well. This means in particular that the first quantum well and the third quantum well are arranged symmetrically around the second quantum well. In the embodiment with the three quantum wells, two further quantum wells, the first and the third quantum well, are available to the second quantum well to receive the Auger carriers formed in the first and third quantum wells so that the Auger carriers can radiantly recombine and not lost by radiationless processes. That means, in particular, that the second quantum well is used particularly efficiently and effectively twice, which advantageously increases an efficiency of the optoelectronic component.

It is noted that the statements made in connection with the first quantum well apply analogously to the third quantum well and vice versa. Embodiments or embodiments with respect to the first quantum well or third quantum well may in particular comprise embodiments or embodiments comprising in addition the third quantum well or first quantum well.

According to yet another embodiment it can be provided that an excitation device is provided for providing an excitation energy in order to excite the first quantum well, in particular to excite the third quantum well, in particular around the first and the third quantum well to stimulate. This means, in particular, that the excitation device provides an excitation energy which can excite the individual quantum wells so that electromagnetic radiation is emitted in the subsequent radiative recombination processes in the corresponding quantum wells.

According to one embodiment, a controller for controlling the excitation means may be provided to excite primarily the first quantum well and / or the third quantum well by means of the excitation energy. This means in particular that primarily only the first quantum well or the third quantum well is excited without the second quantum well being excited. This second quantum well is excited only by the resulting due to the primary excitation Auger carrier. This advantageously increases an efficiency of the optoelectronic device.

According to one embodiment it can be provided that the difference between the first and the second bandgap energy is between 0 eV and 1.5 eV, in particular between 0.5 eV and 1.5 eV.

In a further embodiment it can be provided that the second bandgap energy is greater than or equal to (≥) 3 eV.

According to another embodiment it can be provided that the first bandgap energy is between 0 eV and 3.4 eV, in particular between 1.5 eV and 3.4 eV.

According to a further embodiment it can be provided that the excitation of the first quantum well or of the third quantum well comprises an electrical pumping and / or an optical pumping of the first and third quantum well, respectively. That means, in particular, that in the case of an electronic pump, an electrical voltage is applied to the semiconductor layer sequence, resulting in a displacement of charge carriers. These charge carriers can then enter the first and third quantum well, respectively, in order to radiantly recombine out of them.

In an optical pumping, the semiconductor layer sequence is irradiated by means of electromagnetic radiation, in which case electron-hole pairs are generated by absorption of the electromagnetic radiation, so that electromagnetic radiation is emitted or emitted again upon subsequent recombination of the electrons and the holes.

According to one embodiment, it may be provided that the optical pumping is performed by means of electromagnetic radiation having a wavelength which corresponds to a pumping energy that is greater than the first bandgap energy and less than the second bandgap energy. Because the energy corresponding to the wavelength, referred to here as pump energy, is smaller than the second bandgap energy, the second quantum well will not be excited.

According to one embodiment it can be provided that a sequence of quantum wells is formed, wherein alternately the quantum wells have different bandgap energies. This means, in particular, that each quantum well is assigned an adjacent quantum well, which has a higher bandgap energy. This means, in particular, that in the case of a primary excitation of the quantum wells with the lower energy, the generated auger carriers can reach the quantum wells with the higher band gap energy assigned to these quantum wells. From these quantum wells with the higher bandgap energy, the Auger carriers can then radiantly recombine in an advantageous manner.

For example, a sequence of quantum wells may be provided which is formed from a first quantum well, the second quantum well and then again the first quantum well and again the second quantum well and again the first quantum well and again the second quantum well and any further. A number of alternating first and second quantum wells can be varied as desired. Preferably, it may be provided in such a sequence that at least one of the first quantum wells is replaced by the third quantum well. Thus, an optoelectronic device is provided which can emit different wavelengths in an advantageous manner.

Since the second quantum well emits an electromagnetic radiation having a wavelength corresponding to its band gap due to the radiative recombination processes of the Auger carriers, the optoelectronic component can emit different wavelengths depending on how the band gap of the second quantum well is adjusted. This means, in particular, that different wavelengths of the emitted electromagnetic radiation can be set depending on the band gaps of the individual quantum wells used, that is to say in particular of the first, second and third quantum wells. Depending on requirements and application, a large number of possible color combinations of the emitted light or the radiated electromagnetic radiation can thus be effected in an advantageous manner. In particular, white light can thus be generated in an advantageous manner.

Since electromagnetic radiation is emitted in the individual quantum wells due to the radiative recombination processes, the quantum wells can also be referred to as optically active quantum wells. This in particular to delimit against such pre-quantum wells, also called "pre-wells", which are not optically active, so emit no electromagnetic radiation.

According to one embodiment, the semiconductor layer sequence may comprise the following semiconductor layers to form the multiple quantum well structure:
GaN│Al _x Ga _1-x N│In _a Ga _1-a N│Al _y Ga _1-y N│In _b Ga _1-b N│, where 0 ≦ a, b, x, y ≦ 1 and x ≥ y, a ≥ b.

This means, in particular, that the first quantum well comprises, as the semiconductor layer, the In _a Ga _1-a N semiconductor layer. The second quantum well comprises, in particular as the semiconductor layer, the In _b Ga _{1 -b} N semiconductor layer.

Here it can be provided in particular that based on a different content of indium (In) a corresponding bandgap energy of the quantum wells is set. This means, in particular, that the second quantum well with the higher bandgap energy in particular has more indium than the first quantum well with the lower bandgap energy.

For example, according to another embodiment, it may be provided that a corresponding bandgap energy is set as a function of a thickness of the respective semiconductor layer of the first or third and the second quantum well. This means, in particular, that both semiconductor layers of the first and second and third quantum wells are formed of the same material, for example In-GaN, but have different thicknesses. The fact that the bandgap energies are different due to the different thicknesses is mainly due to the quantization energy and the quantum-confined Stark effect.

The GaN layer can be of any desired thickness, for example. The further above-mentioned semiconductor layers may in particular each have a thickness between 2 nm and 20 nm, wherein a respective thickness of the individual layers may be different in particular. In particular, a content of indium in one of the layers can be greater than 10 percent.

Preferably, one or more or all of the above layers may be replaced by an aluminum gallium indium nitride (AlGaInN).

In an embodiment it can be provided that the aforementioned layer sequence is repeated axially symmetrically. That means in particular that adjoins an Al _y Ga _1-y N layer after the In _b Ga _1-b N-type semiconductor layer to which again connects the In _a Ga _1-a N-type semiconductor layer of the first quantum well, in which is followed by the Al _x Ga _1-x N semiconductor layer, which is followed by the GaN semiconductor layer.

In a further embodiment it can be provided that between the two GaN semiconductor layers, any combination of the Al _x Ga _1-x N, In _a Ga _1-a N, Al _y Ga _1-y N and In _b Ga _1-b N layers are formed, such that a quantum well with a lower bandgap energy associated with a quantum well with a higher bandgap energy, ie adjacent to each other, is.

The invention will be explained in more detail below with reference to preferred embodiments. Show here

1 an optoelectronic component;

2 a flowchart of a method for operating an optoelectronic device;

3 a multiple quantum well structure which is electrically pumped, and

4 the multiple quantum well structure according to 3 which is optically pumped.

Hereinafter, like reference numerals may be used for like features.

1 shows an optoelectronic component 101 ,

The component 101 has a semiconductor layer sequence 103 on which a multiple quantum well structure 105 includes.

The multiple quantum well structure 105 includes a first quantum well 107 and a second quantum well 109 , The two quantum wells 107 and 109 are formed adjacent to each other.

The first quantum well 107 has a first bandgap energy. The second quantum well 109 has a second bandgap energy. Here, a difference between the first and the second bandgap energy is selected such that by means of an excitation of the first quantum well 107 formed Auger carriers 113 into the second quantum well 109 can get to in the quantum well 109 radiant to recombine.

This means, in particular, that when the first quantum well is excited 107 for an electromagnetic radiation is emitted, which is here by means of an arrow with the reference numeral 111 is shown symbolically. At the same time, Auger processes find themselves in the first quantum well 107 instead of. This will be the Auger carriers 113 educated.

The Auger carriers 113 may be due to the selected difference between the first and the second bandgap energy in the second quantum well 109 arrive in order to then radiantly recombine from this. This means in particular that by this radiative recombination process in the second quantum well 109 electromagnetic radiation is emitted, which is here by means of an arrow with the reference numeral 115 is shown symbolically.

In 1 are the Auger carriers 113 as Auger electrons "e-" exemplified. In particular, alternatively or additionally, eye holes can be formed as auger carriers, which then enter the second quantum well 109 can arrive to radiantly recombine from this.

2 shows a method for operating the optoelectronic device 101 according to 1 ,

In one step 201 becomes the first quantum well 107 stimulated, so according to a step 203 the Auger carriers 113 be formed. The Auger carriers 113 arrive due to the selected difference between the first and the second band gap energy in the second quantum well 109 according to a step 205 , In one step 207 then can these Auger carriers 113 in the second quantum well 109 radiant recombine.

3 shows a multiple quantum well structure 301 ,

In particular, the energy ratios for the valence band VB and the conduction band CB are shown. In the ordinate direction the bandgap energy eV is plotted. In the abscissa direction, the individual quantum wells are applied with a width corresponding to the layer thickness.

The multiple quantum well structure 301 comprises three sequentially arranged quantum wells 303 . 305 and 307 , where the two quantum wells 303 and 305 and the two quantum wells 305 and 307 are each disposed adjacent to each other.

To form the three quantum wells 303 . 305 and 307 a semiconductor layer sequence comprising the following semiconductor layers is provided:
As the n-type semiconductor layer is a GaN layer 309 intended. On this GaN semiconductor layer 309 is an Al _x Ga _1-x N semiconductor layer 311 applied. On the Al _x Ga _1-x N semiconductor layer 311 is an In _a Ga _1-a N semiconductor layer 313 applied. On the In _a Ga _1-a N semiconductor layer 313 is an Al _y Ga _1-y N semiconductor layer 315 applied. On the Al _y Ga _1-y N semiconductor layer 315 is an In _b Ga _1-b N semiconductor layer 317 applied. On the In _b Ga _1-b N semiconductor layer 317 is again the Al _y Ga _1-y N semiconductor layer 315 applied. On this layer is the In _a Ga _1-a N semiconductor layer 313 applied. On top of this is the Al _x Ga _1-x N semiconductor layer 311 applied, on which the GaN semiconductor layer 309 is applied as a p-doped layer.

Here, in particular, 0 ≦ a, b, x, y ≦ 1 and x ≥ y, a ≥ b.

This means in particular that the semiconductor layer 313 a quantum well layer for the quantum well 303 forms. The semiconductor layer 317 forms in particular a quantum well layer for the quantum well 305 , The semiconductor layer 313 forms in particular a quantum well layer for the quantum well 307 ,

The two semiconductor layers 311 are each on opposite sides of the quantum well 303 respectively 307 relative to the quantum well 305 intended.

The two semiconductor layers 315 are each between the quantum well 305 and the quantum well 307 respectively 303 intended.

As the ordinate shows, the two quantum wells point 303 and 307 a lower bandgap energy than the quantum well 305 , So that means in particular that the two quantum wells 303 and 307 each have a first bandgap energy that is less than a second bandgap energy of the quantum well 305 ,

In the case of an electrical pumping of this semiconductor layer sequence, ie in particular if an electrical voltage is applied to the semiconductor layer sequence, a displacement of charge carriers occurs. Electrons as negative charge carriers are here by the reference numeral 318a characterized. Holes as positive charge carriers are here by the reference numeral 318b characterized.

Due to the electrical pumping thus takes place in the quantum well 303 and in the quantum pot 307 each a radiative recombination process of the shifted charge carriers 318a and 318b instead of. At the same time as these recombination processes, Auger processes take place, which lead to the formation of Auger electrons and / or Auger holes can. The Auger electrons are designated by the reference numeral 319 characterized. The Augerlöcher are denoted by the reference numeral 321 characterized.

Due to the selected energy difference between the first and the second bandgap energy, the Auger electrons 319 respectively the Auger holes 321 into the quantum well 305 arrive to radiantly recombine from there.

Through the in the quantum wells 303 . 305 and 307 occurring radiative recombination processes electromagnetic radiation is emitted. The electromagnetic radiation due to the primary excitations from the quantum wells 303 and 307 is emitted here is symbolic with an arrow with the reference numeral 323 characterized. The electromagnetic radiation due to the excitation of the quantum well 305 by means of the Auger carrier 319 and 321 and the subsequent Rekombinationsprozesse is emitted, is symbolic with an arrow with the reference numeral 325 characterized.

The process of getting an auger carrier 319 and 321 into the energetically higher quantum well 305 is symbolic with dashed arrows with the reference numeral 327 characterized. This means in particular that the Auger carriers 319 and 321 get into higher energy states and from there into the quantum well 305 relax.

An energy gain due to the recycling of the Auger carriers 319 and 321 is here symbolic with an arrow with the reference numeral 329 characterized.

The provision of the two semiconductor layers 311 in particular, causes a probability of capture by the higher energy quantum well 305 is increased in an advantageous manner. The two semiconductor layers 311 can be referred to in particular as further barrier layers.

The two semiconductor layers 315 in particular, cause a probability that Auger carriers 319 and 321 from a bound state in the quantum well 319 in the energetically favorable quantum well 303 respectively 307 can be reached, whereby their potential energy would be lost again, is lowered in an advantageous manner. The two semiconductor layers 315 can be referred to as barrier layers in particular.

4 shows the multiple quantum well structure 301 according to 3 where here is the multiple quantum well structure 301 is pumped optically and not electrically.

This means, in particular, that the multiple quantum well structure 301 is pumped optically by means of electromagnetic radiation having a wavelength, wherein the wavelength corresponds to a pump energy which is greater than the first bandgap energy and is smaller than the second bandgap energy. The pumping at this wavelength is symbolically by arrows with the reference numeral 401 shown.

In particular, the multiple quantum well structure 301 be pumped by electromagnetic radiation with a wavelength of 450 nanometers. At a band gap of about 2.8 eV with respect to the two quantum wells 303 and 307 can the two quantum wells 303 and 307 be optically excited, while possibly occurring Stokes losses are compensated due to the slightly higher energy of the pump wavelength.

In an embodiment, not shown, it may be provided that the multiple quantum well structure 301 both optically and electrically pumped.

According to an embodiment, not shown, it may be provided that the band gap of the first quantum well 303 and the second quantum well 207 about 1.5 eV. This means, in particular, that these quantum wells must be pumped for an optical excitation of 800 nanometers. In further embodiments not shown, it may be provided that the corresponding band gap is less than or equal to (≤) 800 nanometers.

In an embodiment, not shown, it may be provided that the second bandgap energy, that is, in particular the band gap of the quantum well 205 , equal to 3 eV. This means, in particular, that electromagnetic radiation with a wavelength of approximately 400 nanometers is emitted during a radiative recombination process of Auger charge carriers.

In further embodiments, not shown, it may be provided that the corresponding band gap of the quantum well 305 greater than 3 eV. Thus, for example, that of this quantum well 305 emitted light are especially in the UV range. For example, this can cause a converter to be excited more effectively than by the light of the primary pumped quantum wells 303 and 307 ,

In a further embodiment, not shown, it can be provided that the Band gaps of the individual quantum wells 303 . 305 and 307 lie in the infrared range.

In further embodiments, not shown, it may be provided that, for example, semiconductors with a direct bandgap are used as materials for the individual semiconductor layers, ie, for example, III-V compounds, where phosphides and / or nitrides are particularly preferably used for the visible range.

According to a further embodiment not shown, it can be provided that II-VI compounds are also used as the material for the semiconductor layers: for example (CdZn) Se or (MgZn) O.

In particular, the invention therefore encompasses the idea of using part or all of the energy otherwise lost in the Auger processes involved for generating shorter-wave light. As a result, the efficiency of an optoelectronic component according to the invention can be increased in comparison to a known optoelectronic component.

In particular, this effect can be enhanced by the fact that now a smaller proportion of the Auger energy is available for heating the LED. The resulting reduced operating temperature in turn increases the fraction of the desired radiative recombination in the low-energy quantum wells.

Accordingly, it is only with this secondary effect that the efficiency of a blue light-emitting diode (LED), that is to say an LED emitting in the blue spectral range (in particular 430 nm to 480 nm, in particular 440 nm to 460 nm), can be improved without the (invisible) UV radiation produced. Photons are converted again.

In particular, however, the invention also offers the possibility of producing a white light impression without the inevitable in the case of conventional converter solutions Stokes losses occur.

The combination of a long-wave (from the first quantum well) (for example: yellow-green) emitting InGaN LED with blue quantum wells contained therein (second quantum well) reverse to some extent the currently known principle of partial conversion by using exclusively otherwise lost energy (Auger energy) is used to generate blue-shifted photons.

By dispensing with a converter or other semiconductor-based light sources, in addition to the possibility of increasing energy efficiency, there is also potential for reducing the production costs of a white LED.

Any other color combination for displaying differently colored light can advantageously be formed by means of first and second quantum wells with a corresponding band gap. This also includes semiconductor heterostructures consisting of other material systems.

In summary, therefore, the invention in particular includes the idea of bringing charge carriers, in particular Auger carriers, which are produced during a primary excitation of a quantum well into a second quantum well, so that they can radiantly recombine in the second quantum well. This means in particular that the formed Auger carriers can be recycled or recycled and are available for further light generation. An efficiency of a corresponding optoelectronic component is thus increased in an advantageous manner.

LIST OF REFERENCE NUMBERS

101

opto-electronic component

103

Semiconductor layer sequence

105.301

Multiple quantum well structure

107.303

first quantum well

109.305

second quantum well

319.321

Auger carriers

315

barrier layer

311

further barrier layer

307

third quantum well

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• WO 01/39282 A2 [0002]

Cited non-patent literature

• "Indirect Auger recombination as a cause of efficiency in nitride light-emitting diodes" by E. Kioupakis, P. Rinke, KT Delaney, and CG van der Walle, published in Appl. Phys. Lett. 98, 161107 (2011) [0012]

Claims (11)

Optoelectronic component ( 101 ), comprising: - a semiconductor layer sequence ( 103 ) with a multiple quantum well structure ( 105 . 301 ), Wherein the multiple quantum well structure ( 105 . 301 ) a first quantum well ( 107 . 303 ) with a first bandgap energy and - a second quantum well ( 109 . 305 ) having a second bandgap energy greater than the first bandgap energy - the first quantum well ( 107 . 303 ) and the second quantum well ( 109 . 305 ) are formed adjacent to each other, - wherein a difference between the first and the second bandgap energy is selected such that by means of an excitation of the first quantum well ( 107 . 303 ) formed charge carriers ( 319 . 321 ) Can use energy from a loss process, in particular an Auger process, to transfer into the second quantum well ( 109 . 305 ) to arrive in the second quantum well ( 109 . 305 ) to radiantly recombine. Optoelectronic component ( 101 ) according to claim 1, wherein between the first quantum well ( 107 . 303 ) and the second quantum well ( 109 . 305 ) a barrier layer ( 315 ) having a barrier bandgap energy greater than the second bandgap energy. Optoelectronic component ( 101 ) according to claim 1 or 2, wherein a further barrier layer ( 311 ) adjacent to the second quantum well ( 109 . 305 ) facing away from the first quantum well ( 107 . 303 ), wherein the further barrier layer ( 311 ) has another barrier bandgap energy greater than the second bandgap energy. Optoelectronic component ( 101 ) according to one of the preceding claims, wherein a third quantum well ( 307 ) adjacent to the first quantum well ( 107 . 303 ) facing away from the second quantum well ( 109 . 305 ) mirror image of the first quantum well ( 107 . 303 ) is formed. Optoelectronic component ( 101 ) according to one of the preceding claims, wherein an excitation device is provided for providing an excitation energy in order to generate the first quantum well ( 107 . 303 ). Optoelectronic component ( 101 ) according to claim 5, wherein a control for controlling the excitation means is provided in order to use the excitation energy primarily the first quantum well ( 107 . 303 ). Optoelectronic component ( 101 ) according to one of the preceding claims, wherein the difference between the first and the second band gap energy is between 0 eV and 1.5 eV, in particular between 0.5 eV and 1.5 eV. Optoelectronic component ( 101 ) according to one of the preceding claims, wherein the first bandgap energy is between 0 eV and 3.4 eV, in particular between 1.5 eV and 3.4 eV. Method for operating an optoelectronic component ( 101 ) according to one of the preceding claims, wherein the first quantum well ( 107 . 303 ) ( 200 ), so that by means of the excitation of the first quantum well ( 107 . 303 ) formed charge carriers ( 319 . 321 ) can use an energy from a loss process, in particular an Auger process, to move into the second quantum well ( 109 . 305 ) to get ( 205 ) in the second quantum well ( 109 . 305 ) to radiantly recombine ( 207 ). Method according to 9, wherein the exciting of the first quantum well ( 107 . 303 ) an electrical pumping and / or an optical pumping of the first quantum well ( 107 . 303 ). The method of claim 9 or 10, wherein the optical pumping is performed by means of electromagnetic radiation having a wavelength corresponding to a pumping energy that is greater than the first bandgap energy and less than the second bandgap energy.

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