DE102010045596A1 - Surface-mountable optoelectronic semiconductor component and lead frame composite - Google Patents

Abstract

In at least one embodiment of the optoelectronic semiconductor component (1), the latter can be surface-mounted and comprises a metallic lead frame (2) with at least two separate parts. The semiconductor component (2) comprises at least two electrical connection surfaces (3) for electrical and thermal contact. At least one optoelectronic semiconductor chip (4), which is electrically connected to a second of the parts, is fastened to precisely one first of the parts of the leadframe (2). The semiconductor chip (4) and the lead frame (2) are surrounded at least in places by a potting body (5) shaped like a lens. The connection surfaces (3) are located next to or below the potting body (5). A thickness (D0) of the lead frame (2) is at least 0.1 mm and an average thermal resistance between the semiconductor chip (4) and at least one of the connection surfaces (3) is at most 20 K / W.

Description

A surface-mountable optoelectronic semiconductor component is specified. In addition, a lead frame composite for such a semiconductor device is specified.

In the publication WO 2006/045287 A2 For example, an electromagnetic radiation emitting semiconductor device and a device package are disclosed.

An object to be solved is to provide a surface mountable optoelectronic semiconductor device with a high thermal capacity. Another object to be solved is to provide a lead frame composite for such a semiconductor device.

According to at least one embodiment of the semiconductor device, this is surface mountable. That is, the semiconductor device is preferably mountable on an external circuit board or on an external connection carrier without electrical connection means of the semiconductor device penetrating main surfaces of the external connection carrier. In particular, the semiconductor device is then by means of surface mount technology, English Surface Mount Technology or SMT short, mountable.

According to at least one embodiment of the semiconductor device, this comprises a metallic lead frame with at least two separate parts. The lead frame has two main directions of extension that span a main plane. Specifically, the main plane passes through an area of a surface of the lead frame farthest from another area of the surface intended for contacting with the external terminal support in a direction perpendicular to the main plane and / or an area of the surface of the lead frame which represents a chip connection area. Metallic leadframe means that the leadframe has metallic properties such as high electrical and thermal conductivity and that at least one metal is an integral part of the leadframe. For example, the lead frame comprises or consists of a copper or a copper alloy.

In accordance with at least one embodiment of the semiconductor component, at least two electrical connection surfaces are formed on the parts of the leadframe. The electrical connection surfaces are set up for electrical and thermal contacting of the semiconductor component to the external connection carrier. In particular, the connection surfaces are adapted to be in direct or indirect contact with the external connection carrier. Preferably, each of the parts of the leadframe has exactly one or at least one of the electrical connection surfaces.

According to at least one embodiment of the semiconductor device, this includes at least one optoelectronic semiconductor chip. The semiconductor chip is preferably set up for generating electromagnetic radiation. For example, during operation, the semiconductor chip emits radiation in the visible spectral range or in the near-infrared spectral range. For example, the semiconductor chip includes a semiconductor layer sequence based on a III-V compound semiconductor material such as GaAs or InGaAs. Basing means that in addition to the constituents mentioned, the semiconductor layer sequence may contain further substances, in particular dopants, and in particular that one or more active zones for generating radiation comprise or consist of one of the mentioned semiconductor materials.

In accordance with at least one embodiment of the semiconductor component, the at least one semiconductor chip is fastened to exactly one of the first parts of the leadframe. In other words, the semiconductor chip is directly and mechanically fixedly connected to the first part of the leadframe. With a second of the parts of the lead frame of the semiconductor chip is electrically connected, for example by means of a bonding wire, and mechanically indirectly, for example via the potting.

According to at least one embodiment of the semiconductor device, this comprises a potting body which is shaped like a lens. Lenticular means that the potting body is at least locally shaped like a lens. For example, a lens region of the potting body is spherical, ellipsoidal, paraboloidal, hyperbolic, asymmetric and / or shaped as a free-form surface. Seen in plan view, the lens region of the potting body may in particular have the shape of a circle, an ellipse or a rectangle with rounded corners. The potting body surrounds the semiconductor chip and the lead frame in places. About the potting body, the parts of the lead frame are mechanically connected. The potting body is preferably formed in one piece and, for a radiation generated by the semiconductor chip during operation, also preferably transparent and transparent. A material of the potting body is for example an epoxy, a silicone-epoxy hybrid material or a silicone. The semiconductor chip may be completely surrounded by the potting body together with the leadframe.

In accordance with at least one embodiment of the semiconductor component, the connection surfaces are for electrical and thermal contacting of the semiconductor device, seen in plan view of the plane spanned by the main extension direction main plane, completely adjacent to the potting. In other words, the connection surfaces are not covered by the potting body. Alternatively, it is possible that the connection surfaces, as seen in plan view, are completely covered by the potting or that the pads are both partially adjacent to the potting and are partially covered by the potting.

In accordance with at least one embodiment of the semiconductor component, the connection surfaces are oriented parallel to the main plane spanned by the main extension direction, in particular with a tolerance of at most 15 ° or with a tolerance of at most 5 °.

In accordance with at least one embodiment of the semiconductor component, the potting body is designed in the form of a converging lens. An optical axis of the potting body is preferably oriented perpendicular to the main plane, for example with a tolerance of at most 15 ° or at most 5 °. A maximum, direction-dependent intensity is emitted during operation, in particular along the optical axis. An emission angle within which the emitted intensity drops to 50% of a maximum intensity, ie corresponding to a full width half-width angle, FWHM for short, is for example between 0 ° and 40 °, preferably between 0 ° and 30 °.

According to at least one embodiment of the semiconductor device, a thickness of the lead frame is at least 0.1 mm, preferably at least 0.5 mm, particularly preferably at least 0.9 mm. In other words, the lead frame is comparatively thick.

According to at least one embodiment of the semiconductor device, an average thermal resistance between the semiconductor chip and at least one or all of the pads is at most 20 K / W, in particular at most 15 K / W or at most 10 K / W. A thermal resistance between the semiconductor chip and the pads is therefore comparatively small.

In at least one embodiment of the optoelectronic semiconductor component, the latter is surface-mountable and comprises a metallic leadframe with at least two separate parts. Two main directions of extension of the lead frame span a main plane. The semiconductor device comprises at least two electrical connection pads on the parts of the leadframe for electrical and thermal contacting of the semiconductor device. At least a first one of the parts of the leadframe is mounted at least one optoelectronic semiconductor chip, which is electrically connected to a second of the parts. At least in places, the semiconductor chip and the leadframe surround a lenticular molded potting body which mechanically connects the parts of the leadframe to one another. Seen in plan view of the main plane, the pads are adjacent and / or below the potting body, wherein the pads are further oriented parallel to the main plane. A thickness of the lead frame is at least 0.1 mm and a mean thermal resistance between the semiconductor chip and at least one of the pads is at most 20 K / W.

Due to the comparatively large thickness of the lead frame, a good heat dissipation of the semiconductor device can be realized. As a result, a thermal load capacity of the semiconductor device, for example, due to waste heat in the operation of the semiconductor chip, particularly high.

According to at least one embodiment of the semiconductor device, the electrical connection pads are located on the same side of the main plane. In particular, one of the connection surfaces spans a further plane within which all the other connection surfaces lie, within the scope of the manufacturing tolerances. Preferably, the further plane in which the connection surfaces are located does not intersect the potting body and / or the semiconductor chip.

In accordance with at least one embodiment of the semiconductor component, the semiconductor chip is arranged in a reflector trough, wherein the reflector trough is formed in the first part of the leadframe. The reflector trough has, for example, a planar bottom surface. The semiconductor chip is, for example, a thin-film light-emitting diode chip with a radiation exit area, in particular of approximately 1 mm ² .

The semiconductor chip may have an epitaxial structure with one or more active layers that are provided for generating radiation in operation, wherein the layers may be arranged to emit at mutually different wavelengths. The epitaxial structure is a single or a multiple epitaxial structure. The semiconductor chip is mounted on the bottom surface, in particular via soldering or gluing. In the lateral direction, the semiconductor chip on the bottom surface is completely or partially surrounded by walls of the reflector trough. The walls of the reflector trough may be coated with a reflective material, such as silver. A reflectivity of the walls of the reflector trough for a radiation emitted by the semiconductor chip during operation is for example at least 80% or at least 90% or at least 95%. Preferably, the walls of the reflector pan reflect specularly and not diffusely.

According to at least one embodiment of the semiconductor chip, a quotient L / T lies between a diagonal L of the semiconductor chip and a depth T of the reflector trough between 0.5 and 2.0 inclusive. In other words, the depth of the reflector well is comparable to the diagonal of the semiconductor chip. The diagonal is in particular a distance between two opposite corners of the leadframe facing away from the radiation exit surface of the semiconductor chip seen in plan view of the plane spanned by the main extension directions of the main plane.

In accordance with at least one embodiment of the optoelectronic semiconductor component, the quotient L / T of the diagonal L of the semiconductor chip and the depth T of the reflector trough lies between 0.8 and 1.2 or, preferably, between 0.9 and 1.1. For example, for a thin-film semiconductor chip having an edge length of approximately 1 mm and a radiation exit surface of approximately 1 mm ² , the depth of the reflector trough is approximately 1.5 mm.

In accordance with at least one embodiment of the optoelectronic semiconductor component, the reflector trough has the shape of a truncated cone or a truncated pyramid. It is also possible that the walls of the reflector trough have a paraboloidal or hyperboloidal shape, seen in a cross section.

According to at least one embodiment of the semiconductor device, the mean diameter of the bottom surface of the reflector well is between plus the length of the diagonal L of the semiconductor chip and the length of the diagonal L plus 300 microns. In other words, the mean diameter of the bottom surface approximately corresponds to the length of the diagonal of the semiconductor chip plus a mounting tolerance.

In accordance with at least one embodiment of the semiconductor component, a thickness of boundary sides formed by the lead frame, such as the walls or the bottom of the reflector trough, is at least 0.5 mm, in particular at least 0.7 mm. It is the boundary pages so comparatively thick. As a result, a good heat dissipation from the semiconductor chip can be ensured and a thermal load capacity can be increased.

According to at least one embodiment of the semiconductor device, a quotient of a cross-sectional area of the leadframe, perpendicular to the main plane spanned by the main extension directions, and a thermal power dissipation of the semiconductor chip during normal operation of the semiconductor device is at least 5 mm ² / W, preferably at least 7.5 mm ² / W or at least 10 mm ² / W. For example, the cross-sectional area is at least 3 mm ² or at least 5 mm ² .

In accordance with at least one embodiment of the semiconductor component, the semiconductor chip is surrounded directly by an inner potting compound, which in turn is surrounded by the potting body and the leadframe. If a reflector trough is present, then the inner casting compound is preferably essentially limited to the reflector trough. A material of the inner potting compound may have a lower hardness than a material of the potting body, in particular at a stationary operating temperature of the semiconductor device. Due to the inner potting compound, mechanical stresses between the semiconductor chip and the potting body can be reduced due to temperature changes. The material of the inner potting compound is for example a silicone or contains a silicone. The material of the potting body is for example an epoxy or comprises an epoxide.

In accordance with at least one embodiment of the semiconductor component, a bonding wire, by means of which the semiconductor chip is electrically contacted, pierces an interface between the potting body and the inner potting compound with a tolerance of at most 45 ° or at most 30 ° vertically. Because the bonding wire perpendicularly intersects an interface between the potting compound and the potting body, in particular with the specified tolerance, mechanical stresses on the bonding wire can be reduced by temperature-induced or production-related volume changes of the inner potting compound and / or the potting body.

As a result, a thermal load capacity of the semiconductor device increases.

In accordance with at least one embodiment of the semiconductor component, the bonding wire does not project beyond the reflector well and / or the inner casting compound, in a direction perpendicular to the main plane and away from the semiconductor chip.

In accordance with at least one embodiment of the semiconductor component, the reflector trough has at least one or exactly one edge region of reduced height, which faces the second part of the leadframe. The bonding wire preferably leaves the reflector trough in this area of reduced wall height, in particular without leaving the reflector trough in a direction perpendicular to the main plane.

In accordance with at least one embodiment of the semiconductor component, the first part of the leadframe on which the semiconductor chip is attached extends beyond two opposite sides of the potting body beyond it. In particular, the connection regions are formed on the first part of the leadframe on two opposite sides of the potting body. That is, the first part of the leadframe may extend completely along at least one of the main extension directions. As a result, a particularly efficient heat dissipation from the semiconductor device can be ensured.

In accordance with at least one embodiment of the semiconductor component, the first part of the leadframe, seen in plan view of the main plane spanned by the main directions of extension and next to and / or under the potting body, is fork-shaped with prongs. Between two tines of the first part, seen in plan view, the second part of the lead frame may be located.

It also specifies a ladder frame composite. For example, as described in connection with one or more of the above embodiments, the optoelectronic semiconductor device may include a portion of the lead frame composite. Features of the lead frame composite are therefore also disclosed for the semiconductor device described here and vice versa.

In at least one embodiment of the lead frame composite, this includes a plurality of metallic lead frames. The lead frames each have at least two parts as well as two main extension directions spanning a main plane. At the parts of each of the lead frames, a total of at least two electrical pads for electrical and thermal contact are formed. At a first of the parts there is at least one chip connection region for mounting an optoelectronic semiconductor chip. The pads are, seen in plan view of the main plane, adjacent to the chip connection area and are oriented parallel to the main plane. Each of the leadframes has one or more webs over which the parts of the leadframe are mechanically interconnected. The webs are intended to be removed during or after assembly of a semiconductor chip, so that at least two of the parts per leadframe are separable from each other. A thickness of the lead frame is at least 0.1 mm. A thermal resistance between the chip connection region and at least one of the pads is at most 20 K / W.

In the following, an optoelectronic semiconductor component described here as well as a leadframe composite described here will be explained in more detail with reference to the drawings on the basis of exemplary embodiments. The same reference numerals indicate the same elements in the individual figures.

Show it:

1 . 4 . 7 and 8th schematic representations of embodiments of optoelectronic semiconductor devices described herein,

2 and 5 schematic plan views of embodiments of ladder frame assemblies described herein, and

3 and 6 schematic representations of embodiments of lead frames described herein.

In 1A is a front view, in 1B a side view and in 1C a plan view of an embodiment of an optoelectronic semiconductor device 1 shown. In addition, in 1D a perspective view of the Halbleiterbausteils 1 shown. In the 3A is a top view and in the 3B and 3C are sectional views of a ladder frame 20 of the semiconductor device 1 illustrated. The 1 and 3 are in particular scaled the same along the main extension direction M1, M2.

The ladder frame 20 has a first part 2a and a second part 2 B on. At the first part 2a is in a reflector pan 7 a semiconductor chip 4 on a floor surface 8th appropriate. The floor area 8th has a chip connection area 13 on. About a bonding wire 9a is the semiconductor chip 4 electrically with the second part 2 B of the ladder frame 20 connected. The bonding wire 9a surmounted the reflector trough 7 Not. Furthermore, the reflector tray 7 with an inner potting compound 6 filled. The inner casting compound 6 has a compared to a potting body 5 soft material on. A mechanical connection of the parts 2a . 2 B of the ladder frame 20 via the potting body 5 which is lens-shaped and the inner potting compound 6a as well as the parts 2a . 2 B of the ladder frame 20 surrounds.

In particular, based on the 1A and 1C becomes the ladder frame 20 described in more detail. A thickness D0 of the lead frame 20 is preferably between 0.5 mm and 3 mm inclusive, for example 1 mm +/- 0.2 mm. Due to this comparatively large thickness D0 of the lead frame 20 is a good heat dissipation from the semiconductor chip 4 away guaranteed. An extension D4 of the lead frame 20 along the main extension direction M1 is preferably between including 10 mm and 40 mm, for example at 21 mm +/- 5 mm. All of these and the dimensions given below are merely exemplary dimensions. Semiconductor components according to the invention 1 may also have significantly different dimensions.

Along the further main extension direction M2 is a width D11 of the part 2a in particular between 2 mm and 30 mm inclusive, for example 8 mm +/- 3 mm.

The first part 2a of the ladder frame 20 extends on two opposite sides of the potting body 5 in plan view of a spanned by the main extension directions M1, M2 main plane E. In other words, the first part 2a formed like a fork, with the pin-like shaped second part 2 B between tines 11 the fork-like first part 2a located. A width D13 of the tines 11 of the first part 2a is preferably between 0.5 mm and 10 mm inclusive, for example at 2 mm +/- 1 mm. A width D12 of the second part 2 B is preferably smaller than the width D13 and is preferably between 0.3 mm and 10 mm inclusive, for example at 1 mm +/- 0.5 mm. A distance between the tines 11 of the first part 2a and the second part 2 B along the main extension direction M2 is preferably smaller than the width D13.

At areas furthest away from the main plane E 2a . 2 B , measured in a direction perpendicular to the main plane E, are electrical and thermal pads 3a . 3b formed, which leads to a solder assembly or adhesive mounting of the semiconductor device 1 are formed on an external, not shown connection carrier. In particular, the connection surface 3a of the first part 2a is comparatively large and allows a good thermal coupling of the semiconductor chip 4 to the external connection carrier, not shown.

A distance D14 between a bottom of the potting body 5 and the connection surfaces 3a . 3b is preferably between 0 mm and 2 mm, for example 0.5 mm +/- 0.25 mm. Unlike in 1 it is also possible that the parts 2a . 2 B of the ladder frame 20 have no bend and that thus another plane in which the pads 3a . 3b lie, the potting body 5 cuts. In this case, the external connection carrier, not shown, a recess for the potting body 5 exhibit. A width D5 of the connection surfaces 3a . 3b is preferably between 0.5 mm and 10 mm inclusive, for example 1.5 mm +/- 0.5 mm.

The potting body 5 is described below on the basis of 1A to 1C explained in more detail. The potting body 5 has an optical axis O, which is oriented substantially perpendicular to the main plane E. An overall height D6, relative to the main plane E, is preferably between 2 mm and 30 mm inclusive, for example 7 mm +/- 3 mm. A cuboid region of the potting body 5 , the parts 2a . 2 B of the ladder frame 20 immediately surrounds, preferably has a height D9 between 2 mm and 10 mm, for example, 4 mm +/- 1.5 mm. This cuboid region has a width D3 of preferably between 4 mm and 30 mm inclusive, for example 9 mm +/- 4 mm. The width D3 corresponds approximately to the width D8. The widths D3, D8 are preferably at least 0.5 mm and / or at least 5% or at least 10% larger than the width D11.

A height D10 of the lenticular shaped portion of the potting body 5 is preferably between 1 mm and 30 mm inclusive, for example 6 mm +/- 3 mm. An overall height of the potting body 5 results from the sum of the heights D9 and D10. In a direction away from the ladder frame 20 and starting at the height D7, which is preferably 3 mm +/- 2 mm, the potting body 5 in a lens area, for example, a spherical shape. A diameter D2 of the lenticular lens portion of the potting body 5 at the height D7 is preferably between and including 3 mm and 30 mm, for example, 8.5 mm +/- 3 mm. A diameter D1 at the height D9 is preferably between 1% and 10% and is greater than the diameter D2. In an intermediate area between the height D7 and the cuboid, the parts 2a . 2 B immediately surrounding region of the potting 5 has the potting body 5 prefers the shape of a truncated cone, wherein an opening angle α of the cone is for example between 5 ° and 15 ° inclusive.

Especially in the 3A and 3B is the reflector tray 7 of the semiconductor device 1 shown in more detail. The semiconductor chip 4 has a chip diagonal L, seen in plan view approximately a diameter d of the bottom surface 8th equivalent. Furthermore, a depth T corresponds to the reflector trough 7 , measured from the principal plane E to the bottom surface 8th , approximately the chip diagonal L. Limiting sides of the reflector pan 7 , which may be coated with a reflective material such as silver, have a thickness D * of at least 0.5 mm.

The semiconductor chip 4 is over the bonding wire 9a with the part 2 B connected. The bonding wire 9a is inside the reflector pan 7 into the inner casting compound 6a embedded. A diameter of the bonding wire is, for example, 40 μm +/- 20 μm. A the semiconductor chip 4 remote top side of the inner potting compound 6a can be planar or convex be curved shaped. The bonding wire 9a leaves the reflector tray 7 in a wall area 70a with reduced height. Preferably, the bonding wire 9a no constant radius of curvature, but is close to the top of the inner potting compound 6a in the reflector tray 7 most curved. The bonding wire 9a pierces a boundary surface of the inner potting compound 6a preferably almost perpendicular.

Optional is on the first part 2a in another well a protective diode 15 attached against electrostatic discharge. The further tub also has an area of reduced height 70b on. The protective diode 15 is over the bonding wire 9b with the part 2 B electrically connected. Also preferred is the further tub with the protective diode 15 with another inner potting compound 6b filled.

Also, on the part 2 B a connection area 90 for the bonding wires 9a . 9b be trained as special in the 3A and 3C shown. The part 2 B is here shaped so that the connection area 90 is offset back to the plane E and is, for example, at about the same distance from the plane E as the bottom of the further well for the protective diode 15 , It is possible that the bonding wire 9a the plane E does not intersect and / or is at most offset back by the thickness D0 of the leadframe from the plane E. In other words, the bonding wire runs 9a then, seen in a side view, compare 3B , exclusively between the plane E and a major side F opposite the plane E of the part 2a ,

In 3A is the ladder frame 20 after mounting the semiconductor chip 4 and before attaching the potting body 5 shown. The parts 2a . 2 B of the ladder frame 20 are still over jetties 12 mechanically interconnected so that the lead frame 20 according to 3A is integrally formed. The bridges 12 are removed in a subsequent process step, so with the removal of the webs 12 the parts 2a . 2 B be separated from each other. To improve a mechanical connection of the potting body 5 with the ladder frame 20 points in particular the first part 2a notches 16 as well as openings 17 on.

A ladder frame composite 200 with ladder frame 20 as in connection with the semiconductor device 1 in particular according to 1 used is in a plan view in 2 illustrated. Adjacent ladder frames 20 are about separation areas 14 integrally connected. An assembly of the semiconductor chips 4 at the chip connection areas 13 at the bottom surface 8th the reflector tray 7 as well as a molding of the inner casting compounds 6a . 6b and the potting body 5 can still in ladder frame composite 200 respectively. Singulation to individual semiconductor components 1 Thus, preferably, after all components of the semiconductor device 1 are shaped and / or mounted.

When molding the potting body 5 For example, by casting or injection molding, these may be formed in one piece and / or strand-shaped and connected over several of the lead frame 20 extend. In the singulation of individual semiconductor components 1 then also the potting body 5 isolated and separated from each other. Alternatively, it is possible for this that the potting 5 already formed separated from each other and have no coherent connection and then singling only the separation areas 14 be severed.

Analogous to the 1 to 3 is in the scale 4 to 6 a further embodiment of the semiconductor device 1 and the associated lead frame composite 200 illustrated. Other than according to 1 points the ladder frame 20 of the semiconductor device 1 according to 4 no reflector trough, but the semiconductor chip 4 is at the main level E on the first part 2a appropriate.

By dispensing with the reflector trough is a particularly good thermal coupling of the semiconductor chip 4 reachable to an external connection carrier, not shown. To achieve a special directed radiation, the potting body 5 a large height D10, which is preferably between 4 mm and 30 mm inclusive, for example at 10 mm +/- 3 mm. From a height D7, which is preferably between 2 mm and 20 mm inclusive, for example at 7 mm +/- 3 mm, has the potting 5 a spherical shape. The intermediate region of the potting body extending from the cuboid region to the height D7 5 is truncated cone-shaped with an opening angle α of, for example, 4 ° +/- 2 °.

The ladder frame 20 of the semiconductor device 1 is more detailed in 6 shown. A depth D15 of the bend is in particular between 0 mm and 5 mm, for example 1 mm +/- 0.5 mm. A width D16 of a central portion of the lead frame 20 in which the potting body 5 is appropriate, is preferably between 5 mm and 30 mm, for example, 13 mm +/- 5 mm. The width D16 is preferably at least 50% or at least 60% of the width D4, compare the 1A and 4A ,

Other than illustrated, the semiconductor chip 4 in the embodiment according to the 4 to 6 optionally surrounded with the inner potting compound, which surrounds the semiconductor chips 4 can cover drop-shaped or hemispherical. In this case leaves the bonding wire 9a the inner potting compound preferably approximately perpendicular.

Another embodiment of the semiconductor device 1 is in 7A in a front view, in 7B in a plan view and in 7C shown in a perspective view. The parts 2a . 2 B of the lead frame are outside the potting body 5 U-shaped bent and rich, seen in plan view, to under the potting 5 , The connection surfaces 3 lie, also seen in plan view, partly next to and partially below the potting 5 , At lateral boundary surfaces and at a bottom of the potting body 5 that is the lens area of the potting body 5 is opposite, run the parts 2a . 2 B at a distance to the potting body 5 ,

Unlike in 7 illustrated, it is alternatively also possible that the U-shaped bent parts 2a . 2 B also on the lateral boundary surfaces and / or on the underside of the potting body 5 in direct contact with the potting body 5 stand.

Another embodiment of the semiconductor device 1 is in 8A in a front view, in 8B in a plan view and in 8C shown in a perspective view. Puncture areas, in which the parts 2a . 2 B of the lead frame outer boundary surfaces of the potting body 5 pierced, are located at the bottom of the potting 5 and are, seen in plan view, of the potting body 5 covered. Likewise, the pads 3 completely from the potting body 5 covered, seen in plan view. The parts extend 2a . 2 B L-shaped off the bottom. As well as according to 7 can the parts 2a . 2 B U-shaped, with a first bend of the parts 2a . 2 B preferably within the potting body 5 lies, see 8A , As well as according to the 1 . 4 and 7 are the parts 2a . 2 B shaped like a fork.

The invention described here is not limited by the description based on the embodiments. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• WO 2006/045287 A2 [0002]

Claims (14)

Surface-mountable optoelectronic semiconductor component ( 1 ) with - a metallic lead frame ( 20 ) with at least two separate parts ( 2a . 2 B ) and with two main directions of extent (M) spanning a main plane (E), - at least two electrical connecting surfaces ( 3 ) on the parts ( 2a . 2 B ) to an electrical and thermal contacting of the semiconductor device ( 1 ), - at least one optoelectronic semiconductor chip ( 4 ) on exactly one of the first parts ( 2a ) and with a second of the parts ( 2 B ) is electrically connected, and - a lens-like molded potting ( 5 ), the semiconductor chip ( 4 ) and the lead frame ( 20 ) at least in places and the parts ( 2a . 2 B ) mechanically interconnects, wherein - the connecting surfaces ( 3 ), seen in plan view of the main plane (E), next to and / or below the potting body ( 5 ) and are oriented parallel to the main plane (E), - a thickness (D0) of the lead frame ( 20 ) is at least 0.1 mm, and - a mean thermal resistance between the semiconductor chip ( 4 ) and at least one of the pads ( 3 ) is at most 20 K / W. Optoelectronic semiconductor component ( 1 ) according to the preceding claim, in which the semiconductor chip ( 4 ) in a reflector pan ( 7 ), which in the first part ( 2a ) of the lead frame ( 20 ), wherein a quotient L / T from a diagonal (L) of the semiconductor chip ( 4 ) and a depth (T) of the reflector trough ( 7 ) between 0.5 and 2.0 inclusive. Optoelectronic semiconductor component ( 1 ) according to the preceding claim, wherein the quotient L / T is between 0.8 and 1.2 inclusive or between 0.9 and 1.1 inclusive. Optoelectronic semiconductor component ( 1 ) according to claim 2 or 3, wherein a mean diameter (d) of a bottom surface ( 8th ) of the reflector tray ( 7 ) between and including the length of the diagonal (L) of the semiconductor chip ( 4 ) and the length of the diagonal (L) plus 300 microns. Optoelectronic semiconductor component ( 1 ) according to one of claims 2 to 4, wherein the thickness (D *) of the lead frame ( 20 ) formed limiting sides of the reflector pan ( 7 ) is at least 0.5 mm. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, wherein a quotient A / P from a cross-sectional area (A) of the lead frame ( 20 ), perpendicular to the main plane (E), and a thermal power loss P of the semiconductor chip ( 4 ) in normal operation of the semiconductor device ( 1 ) is at least 5 mm ² / W. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, in which the semiconductor chip ( 4 ) of an inner potting compound ( 6 ) surrounded by the potting body and the lead frame ( 20 ), wherein a material of the inner casting compound ( 6 ) has a lower hardness than a material of the potting body ( 5 ), and wherein the semiconductor chip ( 4 ) with the second part ( 2 ) via a bonding wire ( 9 ) is electrically connected. Optoelectronic semiconductor component ( 1 ) according to claim 2 and according to the preceding claim, wherein the reflector trough ( 7 ) with the inner casting compound ( 6 ), the bonding wire ( 9 ) an interface ( 56 ) between the potting body ( 5 ) and the inner potting compound ( 6 ) penetrates vertically with a maximum tolerance of 45 °. Optoelectronic semiconductor component ( 1 ) according to claim 7 or 8, wherein the bonding wire ( 9 ) the reflector tray ( 7 ) and / or the inner casting compound ( 6 ), in a direction (S) perpendicular to the main plane and away from the semiconductor chip ( 4 ), not overlooked. Optoelectronic semiconductor component ( 1 ) at least according to claim 2, wherein the reflector trough ( 7 ) at least one or exactly one wall area ( 70 ), the second part ( 2 B ) of the lead frame ( 20 ) is facing. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, in which the first part ( 2a ) of the lead frame ( 20 ), on which the semiconductor chip ( 4 ) is attached, on two opposite sides of the potting body ( 5 ), seen in the main plane (E), over the potting body ( 5 ) extends. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, in which the first part ( 2a ) of the lead frame ( 20 ), seen in plan view of the main plane (E) and next to or below the potting body ( 5 ), forked with prongs ( 11 ) is shaped. Optoelectronic semiconductor component ( 1 ) according to one of the preceding claims, in which puncture areas in which the parts ( 2a . 2 B ) outer boundary surfaces of the potting body ( 5 ) pierced, seen in plan view of the main plane (E) of the potting body ( 5 ) are covered. Lead frame composite ( 200 ) with a plurality of metallic lead frames ( 20 ), the lead frames ( 20 ) each comprise: - at least two parts ( 2a . 2 B ), - two main directions of extension (M) spanning a main plane (E), - at least two connecting surfaces ( 3 ) on the parts ( 2a . 2 B ) to an electrical and thermal contact, - at least one chip connection area ( 13 ) for mounting an optoelectronic semiconductor chip ( 4 ) on a first of the parts ( 2a ), where - the connecting surfaces ( 3 ), seen in plan view of the main plane (E), next to the chip connection area ( 13 ) and oriented parallel to the main plane (E), - the parts ( 2a . 2 B ) over bridges ( 12 ) are mechanically interconnected and the webs ( 12 ) are provided, during or after assembly of the semiconductor chip ( 4 ), so that at least two of the parts ( 2a . 2 B ) per ladder frame ( 20 ) are separable from each other, - a thickness (D) of the lead frame ( 20 ) is at least 0.1 mm, and - a mean thermal resistance between the chip connection region ( 13 ) and at least one of the pads ( 3 ) is at most 20 K / W.

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