DE102009041642A8 - Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle - Google Patents

Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle Download PDF

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Publication number
DE102009041642A8
DE102009041642A8 DE102009041642A DE102009041642A DE102009041642A8 DE 102009041642 A8 DE102009041642 A8 DE 102009041642A8 DE 102009041642 A DE102009041642 A DE 102009041642A DE 102009041642 A DE102009041642 A DE 102009041642A DE 102009041642 A8 DE102009041642 A8 DE 102009041642A8
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mqfet
qfet
polyacetylene
molecules
transistor
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DE102009041642A
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DE102009041642A1 (de
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Anmelder Gleich
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Priority to DE102009041642A priority Critical patent/DE102009041642A1/de
Priority to GBGB1008164.4A priority patent/GB201008164D0/en
Priority to GB1012497.2A priority patent/GB2473696B/en
Priority to PCT/IB2010/054110 priority patent/WO2011033438A2/en
Priority to US13/395,078 priority patent/US20120198591A1/en
Priority to EP10768068A priority patent/EP2477939A2/de
Priority to CA2774502A priority patent/CA2774502A1/en
Publication of DE102009041642A1 publication Critical patent/DE102009041642A1/de
Publication of DE102009041642A8 publication Critical patent/DE102009041642A8/de
Withdrawn legal-status Critical Current

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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1604—Amorphous materials
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/122—Single quantum well structures
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    • H01L29/0669—Nanowires or nanotubes
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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  • Engineering & Computer Science (AREA)
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  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
DE102009041642A 2009-09-17 2009-09-17 Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle Withdrawn DE102009041642A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102009041642A DE102009041642A1 (de) 2009-09-17 2009-09-17 Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle
GBGB1008164.4A GB201008164D0 (en) 2009-09-17 2010-05-17 Room temperature quantum field effect transistor comprising a quantum wire array based on polyacetylene-like molecules for instance in the cumulene form
GB1012497.2A GB2473696B (en) 2009-09-17 2010-07-26 Quantum field effect devices
PCT/IB2010/054110 WO2011033438A2 (en) 2009-09-17 2010-09-13 Room temperature quantum field effect transistor comprising a 2-dimensional quantum wire array based on ideally conducting molecules
US13/395,078 US20120198591A1 (en) 2009-09-17 2010-09-13 Room temperature quantum field effect transistor comprising a 2-dimensional quantum wire array based on ideally conducting molecules
EP10768068A EP2477939A2 (de) 2009-09-17 2010-09-13 Zimmertemperatur-quantenfeldeffekttransistor mit einer zweidimensionalen quantendrahtarray auf grundlage ideal leitender moleküle
CA2774502A CA2774502A1 (en) 2009-09-17 2010-09-13 Room temperature quantum field effect transistor comprising a 2-dimensional quantum wire array based on ideally conducting molecules

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009041642A DE102009041642A1 (de) 2009-09-17 2009-09-17 Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle

Publications (2)

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DE102009041642A1 DE102009041642A1 (de) 2011-03-31
DE102009041642A8 true DE102009041642A8 (de) 2012-12-20

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Country Status (6)

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US (1) US20120198591A1 (de)
EP (1) EP2477939A2 (de)
CA (1) CA2774502A1 (de)
DE (1) DE102009041642A1 (de)
GB (2) GB201008164D0 (de)
WO (1) WO2011033438A2 (de)

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US20120198591A1 (en) 2012-08-02
GB2473696A (en) 2011-03-23
DE102009041642A1 (de) 2011-03-31
GB2473696B (en) 2014-04-23
CA2774502A1 (en) 2011-03-24
WO2011033438A3 (en) 2011-11-17
GB201008164D0 (en) 2010-06-30
WO2011033438A2 (en) 2011-03-24
EP2477939A2 (de) 2012-07-25
GB201012497D0 (en) 2010-09-08

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