DE102009024377B4 - Non-destructive analysis method for determining the quality of a thin-film solar cell by means of photoluminescence spectroscopy - Google Patents
Non-destructive analysis method for determining the quality of a thin-film solar cell by means of photoluminescence spectroscopy Download PDFInfo
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- 238000004458 analytical method Methods 0.000 title claims abstract description 15
- 238000000628 photoluminescence spectroscopy Methods 0.000 title claims abstract description 7
- 239000010409 thin film Substances 0.000 title claims abstract description 5
- 238000005424 photoluminescence Methods 0.000 claims abstract description 25
- 239000006096 absorbing agent Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 238000000103 photoluminescence spectrum Methods 0.000 claims abstract description 6
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052951 chalcopyrite Inorganic materials 0.000 claims abstract description 5
- 230000003595 spectral effect Effects 0.000 claims abstract description 5
- 230000005284 excitation Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003908 quality control method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000004886 process control Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001303 quality assessment method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
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Abstract
Zerstörungsfreies Analyseverfahren zur Güteermittlung einer Dünnschichtsolarzelle auf Chalkopyritbasis mittels Photolumineszenzspektroskopie,
wobei
– das Photolumineszenzspektrum zur Ermittlung der elektrischen Eigenschaften der Solarzelle erstmalig und mindestens nach der Erzeugung der Absorberschicht bei Raumtemperatur gemessen wird,
– anschließend der das gemessene Photolumineszenzspektrum dominierende bandlückennahe erste Peak bezüglich seiner spektralen Position analysiert und
– danach mit Messungen der Leerlaufspannung in Abhängigkeit der spektralen Position des mit der Photolumineszenz bestimmten bandlückennahen Peaks, die vorab an Materialproben vom gleichen Typ der Absorberschicht ermittelt wurden, verglichen und
– in Abhängigkeit von bekannten Grenzwerten der Leerlaufspannung ausgewertet wird.Non-destructive analysis method for determining the quality of a chalcopyrite-based thin-film solar cell by means of photoluminescence spectroscopy,
in which
The photoluminescence spectrum for determining the electrical properties of the solar cell is measured for the first time and at least after the generation of the absorber layer at room temperature,
- then analyzed the measured photoluminescence spectrum dominating band gap near first peak with respect to its spectral position and
- Then with measurements of the open-circuit voltage as a function of the spectral position of the determined with the photoluminescence band gap near peak, which were previously determined on material samples of the same type of absorber layer, compared and
- Is evaluated in response to known limits of the open circuit voltage.
Description
Die Erfindung betrifft ein zerstörungsfreies Analyseverfahren zur Güteermittlung einer Dünnschichtsolarzelle auf Chalkopyritbasis mittels Photolumineszenzspektroskopie.The The invention relates to a nondestructive analysis method for quality determination a thin film solar cell chalcopyrite based by photoluminescence spectroscopy.
In den letzten Jahren wurden verstärkt zerstörungsfreie Methoden für Prozessund Qualitätskontrollen während der Herstellung von Solarzellen – sogenannte in-situ Methoden – entwickelt, um die Prozessausbeute zu erhöhen, aber auch um Aussagen zu bestimmten Gütekriterien der hergestellten Halbleiterschicht zu treffen, um so möglichst früh feststellen zu können, ob die gemessenen Parameter der Schicht mit den gewünschten elektrischen Parametern der Solarzelle korrelieren und sich eine Weiterverarbeitung der Absorberschicht einer Solarzelle lohnt.In The last few years have been reinforced destructive Methods for Process and quality controls while the production of solar cells - so-called in-situ methods - developed to increase the process yield, but also statements about certain quality criteria of the semiconductor layer produced to meet as best as possible determine early to be able to whether the measured parameters of the layer with the desired electrical parameters of the solar cell correlate and become one Further processing of the absorber layer of a solar cell is worthwhile.
Dem Stand der Technik nach sind Publikationen bekannt, die sich mit der Beziehung zwischen Photolumineszenz-Eigenschaften und Leerlaufspannung von Solarzellen beschäftigen (siehe beispielsweise „Luminescence and currentvoltage characteristics of solar cells and optoelectronic devices”, G. Smestad and H. Ries, Solar Energy Materials and Solar Cells 25 (1992) 51; „Open circuit voltage and loss mechanisms in polycrystalline Cu(InGa)Se2-heterodiodes from photoluminescence studies”, T. Unold, D. Berkhahn, B. Dimmler, G. H. Bauer, 16th PVSEC Conference, Glasgow, United Kingdom, 1–5 May 2000; „Photoluminescence, open circuit voltage, and photocurrents in Cu(In,Ga)Se2 solar cells with lateral submicron resolution”, T. Jürgens, L. Gütay, G. H. Bauer, Thin Solid Films 511–512 (2006) 678–683).The prior art discloses publications dealing with the relationship between photoluminescence characteristics and open circuit voltage of solar cells (see, for example, "Luminescence and Current Voltage Characteristics of Solar Cells and Optoelectronic Devices", G. Smestad and H. Ries, Solar Energy Materials and Solar Cells 25 (1992) 51. "Open circuit voltage and loss mechanisms in polycrystalline Cu (InGa) Se 2 heterodiodes from photoluminescence studies", T. Unold, D. Berkhahn, B. Dimmler, GH Bauer, 16th PVSEC Conference, Glasgow, United Kingdom, 1-5 May 2000 "Photoluminescence, open circuit voltage, and photocurrents in Cu (In, Ga) Se 2 solar cells with lateral submicron resolution", T. Jürgens, L. Gütay, GH Bauer, Thin Solid Films 511-512 (2006) 678-683).
In diesen Veröffentlichungen wird immer die absolute Größe des Photolumineszenz-Signals oder die Art des Abfalls des Signals bei hohen Energien zur Voraussage der Leerlaufspannung verwendet. Untersuchungen haben ergeben, dass diese Methode in Einzelfällen Korrelationen der Photolumineszenzeffizienz mit der Leerlaufspannung liefern kann, dies aber oft für größere Probenserien nicht notwendigerweise zutrifft. Insbesondere für polykristalline CuInS2-Dünnschichtsolarzellen wurde für eine Probenserie von mehreren Hundert Solarzellen keine ausreichende Korrelation zwischen Photolumineszenzintensität und Leerlaufspannung bzw. zwischen Signalabfall bei hohen Energien und Leerlaufspannung festgestellt. Desweiteren beruht die Messung der Photolumineszenzeffizienz und Linienform auf einer exakt definierten Anregungsleistung und setzt eine ausreichende Photolumineszenzeffizienz voraus, so dass bei geringen Anregungsleistungen ein Signal auch innerhalb kurzer Zeit detektiert werden kann. Wenn die Photolumineszenzausbeute des untersuchten Halbleitermaterials, wie im Falle von CuInS2, sehr schwach ist, kann ein Absolutsignal der Photolumineszenz bei geringer Anregungsleistung der Lichtquelle nicht innerhalb der für Inline-Prozesskontrolle notwendigen kurzen Zeit, d. h. Sekunden, detektiert werden.In these publications, the absolute magnitude of the photoluminescent signal or the nature of the signal drop at high energies is always used to predict the open circuit voltage. Investigations have shown that in some cases this method can provide correlations of the photoluminescence efficiency with the no-load voltage, but this is often not the case for larger sample series. In particular, for polycrystalline CuInS 2 Dünnschichtsolarzellen for a series of several hundred solar cells, a sufficient correlation between photoluminescence intensity and open circuit voltage or between signal drop at high energies and no-load voltage was detected. Furthermore, the measurement of the photoluminescence efficiency and line shape is based on a precisely defined excitation power and requires sufficient photoluminescence efficiency, so that a signal can be detected within a short time even at low excitation powers. If the photoluminescence yield of the examined semiconductor material is very weak, as in the case of CuInS 2 , an absolute signal of the photoluminescence at low excitation power of the light source can not be detected within the short time required for inline process control, ie seconds.
Bei
dem in
In Thin Solid Films 480–481 (2005) 327–331 wird eine Methode zur Qualitätskontrolle beschrieben, bei der Photolumineszenz- und Ramanspektroskopie kombiniert werden. Es wird ausgeführt, dass die Halbwertsbreiten der A1-Mode dünner CuInS2-Schichten mit einer hohen Leerlaufspannung korrelieren und eine dominierende bandkantennahe Lumineszenz sowie geringe Halbwertsbreiten der A1-Mode Absorberschichten mit hohen Wirkungsgraden kennzeichnen.Thin Solid Films 480-481 (2005) 327-331 describes a quality control method combining photoluminescence and Raman spectroscopy. It is stated that the half-widths of the A 1 mode correlate thin CuInS 2 layers with a high open circuit voltage and characterize dominant band edge near luminescence as well as low half widths of the A 1 -mode absorber layers with high efficiencies.
In J. Appl. Phys. 100, 114514 (2006) wird der Vorteil der Photolumineszenzspektroskopie als kontaktlose Messmethode hervorgehoben, die auch auf nur teilweise komplettierte Solarzellen, d. h. in einem beliebigen Prozessschritt der Herstellung von Si-Solarzellen, angewendet werden kann.In J. Appl. Phys. 100, 114514 (2006) becomes the advantage of photoluminescence spectroscopy highlighted as a contactless measurement method, which also applies only partially completed solar cells, d. H. in any process step the production of Si solar cells, can be applied.
Aufgabe der Erfindung ist es nun, ein weiteres zerstörungsfreies Analyseverfahren zur Güteermittlung einer Solarzelle auf Chalkopyritbasis mittels Photolumineszenzmessungen anzugeben, das eine schnelle Analyse des Absorbermaterials im Bereich von Sekunden mittels Raumtemperatur-Photolumineszenzmessungen ermöglicht.task The invention now is another non-destructive analytical method for quality determination a chalcopyrite based solar cell using photoluminescence measurements indicate a rapid analysis of the absorber material in the range of Seconds by means of room temperature photoluminescence measurements allows.
Die Aufgabe wird für ein Analyseverfahren der eingangs genannten Art dadurch gelöst, dass erfindungsgemäß das Photolumineszenzspektrum zur Ermittlung der elektrischen Eigenschaften der Solarzelle erstmalig und mindestens nach der Erzeugung der Absorberschicht bei Raumtemperatur spektral aufgelöst gemessen wird, anschließend der das gemessene Photolumineszenzspektrum dominierende bandlückennahe erste Peak bezüglich seiner spektralen Position analysiert und danach mit Messungen der Leerlaufspannung in Abhängigkeit der Position des mit der Photolumineszenz bestimmten bandlückennahen Peaks, die vorab an Materialproben vom gleichen Typ der Absorberschicht ermittelt wurden, verglichen und in Abhängigkeit von bekannten Grenzwerten bzw. optimalen Werten der Leerlaufspannung ausgewertet wird.The object is achieved for an analysis method of the type mentioned above in that according to the invention the photoluminescence spectrum for determining the electrical properties of the solar cell is spectrally resolved for the first time and at least after the generation of the absorber layer at room temperature, then the band gap near the measured photoluminescence first peak with respect to it analyzed spectral position and then with measurements of the open-circuit voltage as a function of the position of the determined with the photoluminescence band gap near peak, which in advance on material samples from same type of absorber layer were determined, compared and evaluated in dependence on known limits or optimum values of the open circuit voltage.
In der erfindungsgemäßen Lösung wird das gefundene experimentelle Ergebnis genutzt, dass nämlich die wellenlängenaufgelöste Peakposition des Rekombinationslichts eines CuInS2-Halbleitermaterials mit der Leerlaufspannung der aus diesem Material gefertigten Solarzelle korreliert: Je näher die Wellenlänge des gemessenen Maximums der Photolumineszenz der Probe der Position des mit der Photoluminszenz bestimmten bandlückennahen Peaks in der Vergleichskurve ist, desto größer ist die zu erreichende Leerlaufspannung nach Fertigstellung der Solarzelle. Somit fassen sich bereits frühzeitig im Herstellungsprozess der Solarzelle einerseits Fertigungsfehler erkennen, andererseits ist es möglich, Proben mit niedriger Leerlaufspannung nicht weiter zu prozessieren.In the solution according to the invention, the experimental result found is used, namely that the wavelength-resolved peak position of the recombination light of a CuInS 2 semiconductor material correlates with the no-load voltage of the solar cell manufactured from this material: the closer the wavelength of the measured maximum of the photoluminescence of the sample to the position of the Photoluminescence certain band gap near peaks in the comparison curve, the greater the open-circuit voltage to be achieved after completion of the solar cell. Thus, production errors of the solar cell can be detected at an early stage on the one hand, and on the other hand, it is possible to discontinue samples with a low open circuit voltage.
Das Analyseverfahren kann auch nach dem chemischen Prozessschritt und/oder nach dem Aufbringen der ZnO-Schicht auf die Absorberschicht durchgeführt werden.The Analytical method can also after the chemical process step and / or be carried out after the application of the ZnO layer on the absorber layer.
In einer anderen Ausführungsform wird als Absorbermaterial die Familie der Kupferchalkopyrite, insbesondere Cu(Inx, Ga1-x)(Sy, Se2-y) mit 0 ≤ x ≤ 1 und 0 ≤ y ≤ 2 verwendet.In another embodiment, the absorber material used is the family of the copper chalcopyrites, in particular Cu ( Inx , Ga1 -x ) ( Sy , Se2 -y ) with 0≤x≤1 and 0≤y≤2.
Die Anregung der Photolumineszenz in der Probe erfolgt mit Laserlicht oder Weißlicht, die Anregungswellenlänge ist dabei kleiner als die Bandlücke der Absorberschicht.The Excitation of the photoluminescence in the sample takes place with laser light or white light, the excitation wavelength is smaller than the band gap of the Absorber layer.
Mit dieser Methode ist es außerdem möglich eine Inline-Kontrolle der Homogenität von Solarzellenmodulen durchzuführen, indem ein geeigneter Photolumineszenzmesskopf mit einer Linearverschiebeeinheit senkrecht zur Prozesslinienbewegung geführt wird. Eine sofortige Analyse der Linienlage des Photolumineszenzmaximums über die gesamte Breite des Moduls erlaubt die Erstellung von Homogenitätskarten, mit deren Hilfe in die vorgelagerten Prozessierungsschritte regelnd eingegriffen werden kann.With This method is moreover possible one Inline control of homogeneity of solar cell modules, by a suitable photoluminescence measuring head with a linear displacement unit is guided perpendicular to the process line movement. An immediate analysis the line position of the photoluminescence maximum over the entire width of the Module allows the creation of homogeneity maps, with their help in the upstream processing steps are intervened to regulate can.
Der Vorteil der Erfindung gegenüber bereits bekannten Photolumineszenzbasierten Qualitätskontrollen besteht darin, dass bei CuInS2-Absorbermaterialien CuInS2-Solarzellen und verwandten Solarzellenmaterialien eine genaue Prognose der im Endprodukt erwarteten Leerlaufspannung frühzeitig im Herstellungsprozess gemacht werden kann. Dadurch, dass die erfasste Signalsignatur nicht von der Anregungsintensität abhängt, kann mit einer sehr hohen Anregungsintensität gemessen werden, was zu sehr schnellen Messzeiten und zu sehr guter Signalqualität führt.The advantage of the invention over previously known Photolumineszenzbasierten quality controls is that when CuInS.sub.2 -Absorbermaterialien CuInS 2 solar cells and related solar cell materials, an accurate forecast of the expected final product in open circuit voltage can be made early in the production process. The fact that the detected signal signature does not depend on the excitation intensity can be measured with a very high excitation intensity, which leads to very fast measurement times and to very good signal quality.
Desweiteren ist damit die hier beschriebene Erfindung auch für Materialien mit sehr kleiner Photolumineszenzausbeute geeignet, da ein messbares Signal durch eine Erhöhung der Anregungsintensität erreicht werden kann. Für die bisher in der Literatur diskutierten Photolumineszenz-Qualitätskontrollen muss die Anregungsintensität bekannt sein bzw. genauestens kontrolliert werden um die für eine Qualitätskontrolle notwendige Vergleichbarkeit herzustellen. Wie werter oben diskutiert, wurde selbst mit einer solchen Kontrolle der Anregungsintensität für CuInS2 keine Korrelation zwischen Photolumineszenzausbeute und Leerlaufspannung festgestellt.Furthermore, the invention described here is thus also suitable for materials with a very low photoluminescence yield, since a measurable signal can be achieved by increasing the excitation intensity. For the photoluminescence quality controls discussed so far in the literature, the excitation intensity must be known or must be precisely controlled in order to produce the comparability necessary for quality control. As discussed above, even with such control of excitation intensity for CuInS 2, no correlation was found between photoluminescence yield and open circuit voltage.
Die Erfindung wird in folgendem Ausführungsbeispiel anhand von Figuren näher erläutert. Dabei zeigenThe Invention will be in the following embodiment on the basis of figures closer explained. there demonstrate
Zunächst wird
die zu messende Probe, die eine Chalkopyrit-Halbleiterschicht oder
eine Dünnschichtsolarzelle
mit einer solchen Schicht oder ein Modul mit derartigen Solarzellen
sein kann, in einer dunklen Box in einem Probenhalter fixiert und
fokussiertes Licht eines Lasers mit einer Wellenlänge von 670
nm auf diese Probe gerichtet. Dabei ist die Anregungsenergie des
Lasers größer als
die optische Bandlücke
des Halbleitermaterials. Die Messung des Photolumineszenzspektrums
findet bei Raumtemperatur unter Umgebungsbedingungen statt, kann
aber auch im Vakuum oder in Inertgasatmosphäre durchgeführt werden. Das auf die Probe
fallende Laserlicht regt Ladungsträger an, von denen ein Teil
strahlend rekombiniert und dabei das charakteristische Photolumineszenzlicht
aussendet. Dieses wird parallelisiert zum Spektrographen geführt, der
als Diodenzeile oder CCD oder als anderer Flächen- oder Zeilendetektor ausgebildet
sein kann. Danach wird aus dem so ermittelten und in
In Abhängigkeit der ermittelten Leerlaufspannung und in Kenntnis von bekannten Grenzwerten bzw. optimalen Werten der Leerlaufspannung erfolgt nun die Güteeinschätzung der Solarzelle mit einer CuInS2-Absorberschicht, woraus sich Schlussfolgerungen für den weiteren Herstellungsprozess ergeben.In dependence the determined open circuit voltage and in knowledge of known limits or optimum values of the open circuit voltage is now the quality assessment of Solar cell with a CuInS2 absorber layer, resulting in conclusions for the resulting in further manufacturing process.
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009024377A DE102009024377B4 (en) | 2009-06-09 | 2009-06-09 | Non-destructive analysis method for determining the quality of a thin-film solar cell by means of photoluminescence spectroscopy |
| PCT/DE2010/000624 WO2010142270A1 (en) | 2009-06-09 | 2010-06-01 | Nondestructive analytical method for determining the quality of a thin-film solar cell using photoluminescence spectroscopy |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009024377A DE102009024377B4 (en) | 2009-06-09 | 2009-06-09 | Non-destructive analysis method for determining the quality of a thin-film solar cell by means of photoluminescence spectroscopy |
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| DE102009024377A1 DE102009024377A1 (en) | 2010-12-30 |
| DE102009024377B4 true DE102009024377B4 (en) | 2011-02-10 |
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| WO (1) | WO2010142270A1 (en) |
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| US8629411B2 (en) | 2010-07-13 | 2014-01-14 | First Solar, Inc. | Photoluminescence spectroscopy |
| CN109453794B (en) * | 2018-11-12 | 2021-04-09 | 国家海洋局第一海洋研究所 | Cu2ZnSn(SxSe1-x)4Application of alloy nano material as mimic enzyme |
| CN112014359B (en) * | 2020-08-27 | 2024-04-19 | 中国电子科技集团公司第十一研究所 | Method and device for determining indium, arsenic and antimony components |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4217454A1 (en) * | 1991-05-27 | 1992-12-24 | Fuji Electric Res | Thin layer copper indium selenide mfr. - by forming layer on substrate, irradiating, detecting max. light strength emitted and comparing value, for improved solar cell quality |
| US20080108122A1 (en) * | 2006-09-01 | 2008-05-08 | State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon | Microchemical nanofactories |
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| DE10248504B4 (en) | 2002-10-13 | 2008-01-10 | Hahn-Meitner-Institut Berlin Gmbh | Non-destructive analysis method for determining the quality of a chalcopyrite-based solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4217454A1 (en) * | 1991-05-27 | 1992-12-24 | Fuji Electric Res | Thin layer copper indium selenide mfr. - by forming layer on substrate, irradiating, detecting max. light strength emitted and comparing value, for improved solar cell quality |
| US20080108122A1 (en) * | 2006-09-01 | 2008-05-08 | State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon | Microchemical nanofactories |
Non-Patent Citations (7)
| Title |
|---|
| Abbott et al. |
| Abbott et al. J. Appl. Phys., Vol. 100 (2006), 144514 * |
| J. Appl. Phys., Vol. 100 (2006), 144514 |
| Rudigier, E. et al. |
| Rudigier, E. et al. Thin Solid Films, Vol. 480-481 (2005), S. 327-331 * |
| Smestad et al., Solar Energy Materials and Solar Cells, Vol. 25(1992), S.51-71 * |
| Thin Solid Films, Vol. 480-481 (2005), S. 327-331 |
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| WO2010142270A1 (en) | 2010-12-16 |
| DE102009024377A1 (en) | 2010-12-30 |
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