DE102009008249B3 - Pyroelectric detector for performing contactless temperature measurement in e.g. gas analysis, has absorption layer comprising planar elements that exhibit specific dimensions and distances to each other - Google Patents
Pyroelectric detector for performing contactless temperature measurement in e.g. gas analysis, has absorption layer comprising planar elements that exhibit specific dimensions and distances to each other Download PDFInfo
- Publication number
- DE102009008249B3 DE102009008249B3 DE102009008249A DE102009008249A DE102009008249B3 DE 102009008249 B3 DE102009008249 B3 DE 102009008249B3 DE 102009008249 A DE102009008249 A DE 102009008249A DE 102009008249 A DE102009008249 A DE 102009008249A DE 102009008249 B3 DE102009008249 B3 DE 102009008249B3
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- Prior art keywords
- absorption layer
- pyroelectric
- polymer film
- surface elements
- pyroelectric detector
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- Expired - Fee Related
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 40
- 238000009529 body temperature measurement Methods 0.000 title description 2
- 238000004868 gas analysis Methods 0.000 title description 2
- 229920006254 polymer film Polymers 0.000 claims abstract description 12
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 description 9
- 230000002745 absorbent Effects 0.000 description 5
- 239000002250 absorbent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Die Erfindung betrifft einen pyroelektrischen Detektor mit strukturierter Absorptionsschicht nach dem Oberbegriff des Anspruchs 1.The The invention relates to a structured pyroelectric detector Absorption layer according to the preamble of claim 1.
Der genannte pyroelektrische Detektor wandelt einfallende Infrarotstrahlung in ein elektrisches Ausgangssignal um. Derartige pyroelektrische Detektoren lassen sich zur berührungslosen Temperaturmessung, in der Gasanalyse, in Spektrometern sowie Bewegungs- und Brandmeldern einsetzen.Of the called pyroelectric detector converts incident infrared radiation into an electrical output signal. Such pyroelectric Detectors can be used for non-contact Temperature measurement, gas analysis, spectrometers and motion and fire detectors.
Ein pyroelektrischer Detektor ist im Wesentlichen aus einem empfindlichen Element und einem Vorverstärker aufgebaut. Das empfindliche Element besteht aus einem pyroelektrischen Chip, dessen Ober- und Unterseite mit Elektroden beschichtet sind. Trifft Infrarotstrahlung auf das empfindliche Element, wird diese absorbiert. Die Temperaturänderung bewirkt aufgrund des pyroelektrischen Effektes im pyroelektrischen Material eine Änderung der spontanen Polarisation. Die daraus resultierende Ladungstrennung wird mit Hilfe des Vorverstärkers in eine auswertbare Spannung gewandelt.One The pyroelectric detector is essentially made of a sensitive one Element and a preamplifier built up. The sensitive element consists of a pyroelectric Chip whose top and bottom are coated with electrodes. If infrared radiation hits the sensitive element, it will absorbed. The temperature change causes due to the pyroelectric effect in the pyroelectric Material a change the spontaneous polarization. The resulting charge separation is done with the help of the preamplifier converted into an evaluable voltage.
Grundvoraussetzung zur Erzielung einer hohen Empfindlichkeit bei diesen Sensoren ist eine möglichst effektive Umwandlung der einfallenden Infrarotstrahlung in Wärme. Dafür sind bereits verschiedene Möglichkeiten bekannt.prerequisite to achieve high sensitivity in these sensors one possible effective conversion of incident infrared radiation into heat. There are already various possibilities known.
In
Eine weitere häufig genutzte Möglichkeit zur Empfindlichkeitssteigerung ist das Aufbringen eines Infrarotabsorbierenden Films. Sehr hohe Absorptionswerte weisen Absorptionsschwarzschichten bzw. Rußschwarzschichten auf, die z. B. durch thermisches Verdampfen von Gold, Silber, Platin, NiCr, TiO o. ä. Metallen hergestellt werden. Diese Schichten besitzen allerdings den Nachteil, dass sie nicht fotolithographisch herstellbar sind, sondern mittels Durchdampfmasken erzeugt werden müssen. Solche Schichten sind mechanisch sehr instabil, nicht lösungsmittelbeständig und nicht langzeitstabil.A more often used possibility to increase sensitivity is the application of an infrared absorbing Film. Very high absorption values show absorption black layers or carbon black layers on, the z. B. by thermal evaporation of gold, silver, platinum, NiCr, TiO or the like Metals are produced. However, these layers possess the disadvantage that they can not be produced photolithographically, but must be generated by means of vapor masks. Such layers are mechanically very unstable, not solvent resistant and not stable for a long time.
Eine
einfache und kostengünstige
Alternative stellen organische bzw. anorganische Polymerschichten
dar, die leicht modifizierbar und strukturierbar sind. In
In
In
der
In
In
In
Es ist daher die Aufgabe der Erfindung, einen pyroelektrischen Detektor mit einer Absorptionsschicht mit verbesserten Eigenschaften anzugeben, die allein durch fotolithographische Verfahren herstellbar ist. Die Beschaffenheit der Absorptionsschicht soll die Reflexion der einfallenden Strahlung unterdrücken, die Absorption der Schicht bei gleichzeitiger Verringerung der Wärmekapazität verbessern, um damit eine höhere Empfindlichkeit und eine homogenere spektrale Empfindlichkeit zu erzielen.It Therefore, the object of the invention is a pyroelectric detector to provide an absorbent layer with improved properties, the can be produced solely by photolithographic process. The The nature of the absorption layer is intended to reflect the reflection of the incident Suppress radiation, improve the absorption of the layer while reducing the heat capacity, order a higher Sensitivity and a more homogeneous spectral sensitivity too achieve.
Diese Aufgabe wird erfindungsgemäß durch einen pyroelektrischen Detektor mit den in Anspruch 1 genannten Merkmalen gelöst. Weitere Ausgestaltungen der Erfindung sind den Unteransprüchen zu entnehmen.These The object is achieved by a pyroelectric detector with the features mentioned in claim 1 solved. Further embodiments of the invention can be found in the dependent claims.
Der Detektor besitzt ein pyroelektrisches Element aus LiTaO3, welches über Silikonklebstoff an den Ecken mit dem Chipträger verbunden ist. Auf der Ober- und Unterseite des LiTaO3-Chips befinden sich die sich kreuzenden Elektroden. Die Überlappung der Front- und Rückelektrode kennzeichnet die empfindliche Fläche des pyroelektrischen Detektors. Im Bereich der empfindlichen Fläche befindet sich eine Absorptionsschicht.The detector has a pyroelectric element made of LiTaO 3 , which is connected via silicone adhesive at the corners with the chip carrier. On the top and bottom of the LiTaO 3 chips are the intersecting electrodes. The overlap of the front and back electrodes characterizes the sensitive area of the pyroelectric detector. In the area of the sensitive area is an absorption layer.
Erfindungsgemäß besteht
die Absorptionsschicht aus einem fotolithographisch strukturierbaren Polymerfilm
mit einer Dicke von unter 10 μm,
wobei infolge reduzierter Dicke des Polymerfilmes die Absorptionsschicht
in Flächenelemente
(
Bei einer ersten Ausführung sind die Flächenelemente aus dem Polymerfilm fotolithographisch freigelegte Säulen, die eine Säulenbreite und einen Abstand zueinander von kleiner als 10 μm aufweisen.at a first embodiment are the surface elements from the polymer film photolithographically exposed columns, the a column width and have a distance from each other of less than 10 microns.
Bei einer weiteren Ausführung sind die Flächenelemente in den Polymerfilm fotolithographisch eingebrachte Löcher, die eine Lochbreite und einen Lochabstand zueinander von kleiner als 10 μm aufweisen.at another embodiment are the surface elements in the polymer film photolithographically introduced holes, the a hole width and a hole distance from each other of less than 10 microns.
Vorteilhaft sind die Flächenelemente bis auf die Frontelektrode eingebracht und die Flanken der Flächenelemente vorzugsweise mit einem positiven oder negativen Winkel zur Oberflächennormalen des pyroelektrischen Chips ausgestattet.Advantageous are the surface elements introduced to the front electrode and the flanks of the surface elements preferably at a positive or negative angle to the surface normal equipped with the pyroelectric chip.
Die erfindungsgemäße Absorptionsschicht lässt sich mittels Spin-Coating auf den pyroelektrischen Chip aufbringen. Die Erzeugung der Flächenelemente bzw. die 3-dimensionale Strukturierung ergibt sich durch eine Übertragung eines speziellen Musters zur Erzeugung von Gräben und Löchern im Bereich des empfindlichen Elementes mittels Fotolithographie.The absorption layer according to the invention can be Apply by spin coating on the pyroelectric chip. The Generation of surface elements or the 3-dimensional Structuring results from a transfer of a special pattern for the creation of trenches and holes in the area of the sensitive element by means of photolithography.
Die einfallende Strahlung wird teilweise in der 3-dimensional strukturierten Schicht absorbiert und teilweise reflektiert. Die reflektierte Strahlung wird mit Hilfe der Strukturen so abgelenkt, dass sie nochmals von der Schicht absorbiert wird. Das Reflexionsvermögen der Absorptionsschicht wird durch die Strukturierung weitgehend unterdrückt, so dass annähernd die gesamte einfallende Infrarotstrahlung zur Erwärmung der Absorptionsschicht zur Verfügung steht.The incident radiation is partially structured in the 3-dimensional Layer absorbed and partially reflected. The reflected radiation is with the help of the structures so distracted that they again from the Layer is absorbed. The reflectivity of the absorption layer is largely suppressed by the structuring, so that approx entire incident infrared radiation for heating the absorption layer to disposal stands.
Die Verringerung des Reflexionsvermögens bzw. die Steigerung des Absorptionsvermögens der aufgebrachten Schicht ist abhängig von den Abmessungen der eingebrachten Strukturen. Dies wird erreicht durch den fotolithographisch strukturierten Polymerfilm mit einer Dicke von unter 10 μm und Abmessungen der Flächenelemente von kleiner als 10 μm.The Reduction of the reflectivity or the increase in the absorbency of the applied layer depends on of the dimensions of the introduced structures. This is achieved through the photolithographically structured polymer film with a Thickness of less than 10 microns and dimensions of the surface elements smaller than 10 μm.
Mit der Erfindung wird eine höhere Empfindlichkeit und eine homogenere spektrale Empfindlichkeit des pyroelektrischen Detektors erzielt. Die Absorptionsschicht ist für sehr dünne empfindliche Elemente geeignet, und ist bis zu einer Elementdicken < 25 μm nutzbar. Die Strukturen lassen sich exakt reproduzieren und mit bestehenden Technologie leicht herstellen, wobei z. B. die Nachteile einer zeitaufwändigen Herstellung von Suspensionen mit langen Belichtungs- und Entwicklungszeiten bei der Strukturierung umgangen werden, d. h. eine einfache technologische Handhabbarkeit wird gewährleistet und eine hohe Prozessausbeute erreicht.With The invention is a higher Sensitivity and a more homogeneous spectral sensitivity of the achieved pyroelectric detector. The absorption layer is sensitive to very thin Suitable elements, and can be used up to an element thicknesses <25 microns. The structures can be reproduced exactly and with existing ones Easy to manufacture technology, with z. B. the disadvantages of a time-consuming production of suspensions with long exposure and development times be bypassed in the structuring, d. H. a simple technological Manageability is guaranteed and achieved a high process yield.
Darüber hinaus lässt sich die Herstellung der erfindungsgemäßen Absorptionsschicht einfach in die bisherige Herstellungstechnologie pyroelektrischer Infrarotsensoren mit Polymerabsorptionsschichten integrieren.Furthermore let yourself the production of the absorption layer according to the invention simple in the previous manufacturing technology of pyroelectric infrared sensors integrate with polymer absorption layers.
Nachfolgend wird die Erfindung an einem Ausführungsbeispiel erläutert. Es zeigen:following the invention is based on an embodiment explained. Show it:
In
a = 8,2 μm und b = 6,8 μm.
a = 8.2 μm and b = 6.8 μm.
Dabei konnte durch das Einbringen der Struktur in die Schicht das Absorptionsvermögen um teilweise 70% gesteigert werden.there By incorporating the structure into the layer, the absorption capacity could be partially reduced 70% increase.
Die Charakterisierung der Schicht erfolgt mittels eines FTIR-Spektrometers. Aus den Messungen des Transmissions- und Reflexionsgrades der Schicht im interessierenden Wellenlängenbereich wurde das Absorptionsvermögen der Schicht berechnet.The Characterization of the layer takes place by means of an FTIR spectrometer. From the measurements of the transmission and reflectance of the layer in the wavelength range of interest the absorption capacity the shift calculated.
- 11
- Pyroelektrischer Chippyroelectric chip
- 22
- Empfindliches Element mit strukturierter Absorptionsschichtsensitive Element with structured absorption layer
- 33
- Frontelektrodefront electrode
- 44
- Rückelektrodeback electrode
- 55
- Absorptionsschichtabsorbing layer
- 66
- Flächenelementsurface element
- 77
- Säulepillar
- 88th
- Lochhole
Claims (4)
Priority Applications (1)
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DE102009008249A DE102009008249B3 (en) | 2009-02-04 | 2009-02-04 | Pyroelectric detector for performing contactless temperature measurement in e.g. gas analysis, has absorption layer comprising planar elements that exhibit specific dimensions and distances to each other |
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Application Number | Priority Date | Filing Date | Title |
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DE102009008249A DE102009008249B3 (en) | 2009-02-04 | 2009-02-04 | Pyroelectric detector for performing contactless temperature measurement in e.g. gas analysis, has absorption layer comprising planar elements that exhibit specific dimensions and distances to each other |
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DE102009008249A Expired - Fee Related DE102009008249B3 (en) | 2009-02-04 | 2009-02-04 | Pyroelectric detector for performing contactless temperature measurement in e.g. gas analysis, has absorption layer comprising planar elements that exhibit specific dimensions and distances to each other |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4218789A1 (en) * | 1992-06-06 | 1993-12-09 | Philips Patentverwaltung | Microelectronic compatible pyroelectric detector - has first contact in radiation receiving area and further contact between pyroelectric layer and supporting silicon substrate, which is etched away below pyroelectric layer to form free-supporting layer. |
DE4221037A1 (en) * | 1992-06-26 | 1994-01-05 | Heimann Optoelectronics Gmbh | Pyroelectric or thin film bolometer thermal radiation sensor - has photolithographically-structurable layer with infrared absorption characteristics, several microns in thickness on radiation-receiving surface of sensor over silicon@ substrate. |
DE10057404A1 (en) * | 1999-11-19 | 2001-05-31 | Murata Manufacturing Co | Heat absorption medium for infrared sensor formed on surface of temperature detection part is thinner in edge region than central region |
JP2004045339A (en) * | 2002-07-15 | 2004-02-12 | Mitsuteru Kimura | Thermal infrared sensor, radiation thermometer, and method for forming infrared absorption film |
US6781128B2 (en) * | 2002-01-17 | 2004-08-24 | Nissan Motor Co., Ltd. | Infrared radiation detecting device |
DE102005035148A1 (en) * | 2004-08-04 | 2006-03-16 | Denso Corp., Kariya | Infrared sensor device and method for its production |
EP1944589A1 (en) * | 2002-03-18 | 2008-07-16 | Honeywell International Inc. | Carbon nanotube sensor |
-
2009
- 2009-02-04 DE DE102009008249A patent/DE102009008249B3/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4218789A1 (en) * | 1992-06-06 | 1993-12-09 | Philips Patentverwaltung | Microelectronic compatible pyroelectric detector - has first contact in radiation receiving area and further contact between pyroelectric layer and supporting silicon substrate, which is etched away below pyroelectric layer to form free-supporting layer. |
DE4221037A1 (en) * | 1992-06-26 | 1994-01-05 | Heimann Optoelectronics Gmbh | Pyroelectric or thin film bolometer thermal radiation sensor - has photolithographically-structurable layer with infrared absorption characteristics, several microns in thickness on radiation-receiving surface of sensor over silicon@ substrate. |
DE10057404A1 (en) * | 1999-11-19 | 2001-05-31 | Murata Manufacturing Co | Heat absorption medium for infrared sensor formed on surface of temperature detection part is thinner in edge region than central region |
US6781128B2 (en) * | 2002-01-17 | 2004-08-24 | Nissan Motor Co., Ltd. | Infrared radiation detecting device |
EP1944589A1 (en) * | 2002-03-18 | 2008-07-16 | Honeywell International Inc. | Carbon nanotube sensor |
JP2004045339A (en) * | 2002-07-15 | 2004-02-12 | Mitsuteru Kimura | Thermal infrared sensor, radiation thermometer, and method for forming infrared absorption film |
DE102005035148A1 (en) * | 2004-08-04 | 2006-03-16 | Denso Corp., Kariya | Infrared sensor device and method for its production |
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