DE102008031893A1 - Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas - Google Patents

Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas Download PDF

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Publication number
DE102008031893A1
DE102008031893A1 DE102008031893A DE102008031893A DE102008031893A1 DE 102008031893 A1 DE102008031893 A1 DE 102008031893A1 DE 102008031893 A DE102008031893 A DE 102008031893A DE 102008031893 A DE102008031893 A DE 102008031893A DE 102008031893 A1 DE102008031893 A1 DE 102008031893A1
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Germany
Prior art keywords
silver
contact
contacting
paste
silver compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
DE102008031893A
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German (de)
Inventor
Wolfgang Schmitt
Tanja Dickel
Katja Stenger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Deutschland GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Priority to DE102008031893A priority Critical patent/DE102008031893A1/en
Priority to EP08016620.0A priority patent/EP2042260B1/en
Priority to DK08016620.0T priority patent/DK2042260T3/en
Priority to KR1020080094083A priority patent/KR101102214B1/en
Priority to US12/237,660 priority patent/US20090134206A1/en
Priority to CN201110312205.XA priority patent/CN102430875B/en
Priority to CN2008101688371A priority patent/CN101431038B/en
Priority to JP2008250495A priority patent/JP5156566B2/en
Priority to US12/615,516 priority patent/US20100055828A1/en
Publication of DE102008031893A1 publication Critical patent/DE102008031893A1/en
Priority to KR1020110060009A priority patent/KR20110088477A/en
Priority to HRP20140178AT priority patent/HRP20140178T1/en
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/34—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material comprising compounds which yield metals when heated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

The method for producing an electrically conductive or heat-conductive component (3a) for producing a metallic contact between two elements e.g. cooling bodies or solar cells (8), comprises forming an elemental silver from a silver compound between contact areas connecting one above the other. The silver compound is an organic silver compound or silver carbonate. The contact area comprises a base metal in the surface. The method is carried out at 400[deg] C. A paste containing the silver compound is applied on the contact area. Independent claims are included for: (1) a method for producing a fully flat metallic contact between a metallic connecting surface of an electronic component and a metallic connecting surface of a further component; and (2) a contacting paste.

Description

Die vorliegende Erfindung betrifft die Befestigung elektrischer Bauteile über Kontakte mit Kontaktierungspasten, insbesondere Silberpasten.The The present invention relates to the attachment of electrical components via Contacts with contacting pastes, in particular silver pastes.

Bekannte Kontaktierungspasten aus in Lösungsmittel dispergierten Silberflocken (Silberflakes) werden unter Druck in der Größenordnung von 30 MPa bei Temperaturen von ungefähr 300°C gesintert, um eine dünne Schicht von ungefähr 50 μm auf ein elektronisches Bauteil (Chip) aufzutragen. Hierbei wird eine zuverlässige Verbindung von Chip und Substrat geschaffen, die Betriebstemperaturen von über 250°C standhält. Die zu verbindenden Flächen müssen edel sein, insbesondere aus Silber oder Gold bestehen.Known Contacting pastes dispersed in solvent Silver flakes (silver flakes) are under pressure of the order of magnitude of 30 MPa at temperatures of about 300 ° C sintered to a thin layer of about 50 microns on an electronic component (chip) apply. This is a reliable connection of the chip and substrate created, the operating temperatures of over 250 ° C. withstand. The surfaces to be joined must be noble, in particular made of silver or gold.

WO 2004/026526 offenbart die Anwendung von Nanosilber mit Partikelgrößen < 100 nm, um den Druck auf etwa 20 MPa und die Temperatur auf ca. 250°C herabzusetzen. WO 2004/026526 discloses the use of nanosilver with particle sizes <100 nm to reduce the pressure to about 20 MPa and the temperature to about 250 ° C.

Nach US 6,951,666 werden leicht zersetzbare Silberverbindungen in Pasten zur Erstellung von Siebdrucken angewendet, beispielsweise zusammen mit Silberflocken oder Nanosilber oder einer Kombination aus Silberflocken und Nanosilber.To US 6,951,666 For example, easily decomposable silver compounds are used in pastes to create screen prints, for example, together with silver flakes or nanosilver or a combination of silver flakes and nanosilver.

Die Aufgabe der vorliegenden Erfindung liegt darin, einerseits Kontaktierungen bereitzustellen, die einen Schmelzpunkt möglichst weit oberhalb eines Weichlots aufweisen und andererseits aber möglichst einfach wie mit Weichlot herstellbar sind. Es sollen elektronische Bauteile mit einem Temperaturanwendungsbereich, der sich bis über 200°C und gegebenenfalls sogar über 250°C erstreckt, leichter auf Substraten befestigt werden, insbesondere dafür die Druckbelastung verringert werden. Hierfür soll eine geeignete Kontaktierungspaste geschaffen werden.The Object of the present invention is, on the one hand contacts to provide a melting point as far as possible above a soft solder and on the other hand as simple as possible as can be produced with soft solder. It should be electronic components with a temperature application range that extends to over 200 ° C and possibly even over 250 ° C. extends, easier to be attached to substrates, in particular for the pressure load to be reduced. Therefor should be created a suitable bonding paste.

Die Lösung der Aufgabe erfolgt mit den Merkmalen der unabhängigen Ansprüche. Bevorzugte Ausführungen sind in den abhängigen Ansprüchen beschrieben.The Solution of the task is done with the characteristics of independent Claims. Preferred embodiments are in the dependent claims.

Beim Zusammenfügen mittels einer elektrisch leitfähigen oder einer wärmeleitfähigen Verbindung zur Kontaktierung zweier Elemente wird erfindungsgemäß eine Silberverbindung zu elementarem Silber zwischen den Kontaktflächen umgesetzt. Das Zusammenfügen erfolgt in einem Ofen oder mittels Heizplatte, insbesondere in einem Umluftkammertrockenschrank oder einem Durchlaufofen mit Heizplattensystemen oder mittels Stempel.At the Assembly by means of an electrically conductive or a thermally conductive compound for contacting two elements according to the invention is a silver compound converted to elemental silver between the contact surfaces. The joining takes place in an oven or by means of a heating plate, especially in a circulating air drying oven or a continuous furnace with hotplate systems or by means of stamps.

Maßgeblich für die vorliegende Erfindung ist, dass die mechanische Befestigung von Bauteilen über deren Kontakte erfolgt, die vorzugsweise zusätzlich als elektrische und/oder wärmeleitende Verbindungen nutzbar sind.decisive for the present invention is that the mechanical Attachment of components via their contacts, which preferably additionally as electrical and / or heat-conducting Connections are usable.

Vorzugsweise

  • • ist die Silberverbindung eine organische Silberverbindung oder Silberkarbonat;
  • • weist eine Kontaktfläche unedles Metall in der Oberfläche auf;
  • • liegt die Prozesstemperatur zur Herstellung der Silberverbindung unterhalb von 400°C;
  • • erfolgt die Herstellung der Silberverbindung unter Atmosphärendruck;
  • • wird eine Paste, die die Silberverbindung aufweist, auf eine Kontaktfläche aufgetragen.
Preferably
  • The silver compound is an organic silver compound or silver carbonate;
  • • has a contact surface of base metal in the surface;
  • • the process temperature for producing the silver compound is below 400 ° C;
  • The preparation of the silver compound is carried out under atmospheric pressure;
  • • a paste containing the silver compound is applied to a contact surface.

Die Paste enthält vorzugsweise ein Gel gemäß DE 10 2005 053 553 A1 und Kupfer- oder Silberpartikel, insbesondere im Bereich zwischen 0,2 μm und 5 μm, besonders bevorzugt zwischen 0,5 μm und 2 μm.The paste preferably contains a gel according to DE 10 2005 053 553 A1 and copper or silver particles, in particular in the range between 0.2 microns and 5 microns, more preferably between 0.5 microns and 2 microns.

Silberverbindungen, die sich unter 300°C, insbesondere unter 250°C zersetzen und dabei elementares Silber bilden, sind besonders geeignet, Sinterpasten bezüglich ihrer Anwendung erheblich zu verbessern. Erfindungsgemäß werden Kontaktierungspasten bereitgestellt, die leicht zersetzbare Silberverbindungen aufweisen. Diese erfindungsgemäßen Pasten ermöglichen ein Kontaktieren bei niederem Anpressdruck, insbesondere unter 5 bar, vorzugsweise unter 3 bar und eine Prozesstemperatur von ca. 230°C, d. h. unter 250°C, insbesondere unter 240°C.Silver compounds, which is below 300 ° C, especially below 250 ° C. decompose and thereby form elemental silver, are particularly suitable sintered pastes significantly improve their application. According to the invention Contacting pastes provided the easily decomposable silver compounds exhibit. These pastes according to the invention enable a contact at low contact pressure, in particular under 5 bar, preferably below 3 bar and a process temperature of about 230 ° C, d. H. below 250 ° C, especially below 240 ° C.

Die erfindungsgemäße Kontaktierung zwischen den Oberflächen ist bei über 200°C temperaturwechselbeständig, und zwar über 2.000 Zyklen. Damit übertrifft die Kontaktierungspaste die mit Weichlotlegierungen oder Leitklebern erzielbare Temperaturbeständigkeit und Temperatur- Wechselbeständigkeit. Im Rahmen der vorliegenden Erfindung wird es somit ermöglicht, dass die Kontaktierungstemperatur der Kontaktierungspaste unter der Betriebstemperatur der mit der Paste hergestellten Kontakte liegt. Die erfindungsgemäß leicht zersetzlichen Silberverbindungen sind einfacher herstellbar und leichter zu konservieren als Nanosilber. Nanosilber verliert während der Lagerung die gewünschten Eigenschaften, da die Oberfläche durch Agglomeration sich ständig verkleinert und somit zum Fügen nicht mehr geeignet ist.The contacting according to the invention between the surfaces is temperature change resistant at over 200 ° C, over 2,000 cycles. This surpasses the Contact paste with soft solder alloys or conductive adhesives achievable temperature resistance and temperature change resistance. In the context of the present invention, it is thus possible that the contacting temperature of the contacting paste under the operating temperature of the contacts made with the paste lies. The invention easily decomposable Silver compounds are easier to prepare and easier to preserve as nanosilver. Nanosilver loses during storage the desired properties, as the surface Agglomeration constantly shrinking and thus is no longer suitable for joining.

Maßgeblich ist, dass die Paste neben ihren organischen Bestandteilen wie Lösungsmittel und/oder Carbonsäuren 2 bis 20 Gew.-%, insbesondere 5 bis 15 Gew.-% einer leicht zersetzlichen Silberverbindung aufweist, durch die eine Verarbeitung wie mit Weichlot unter 400°C ermöglicht wird. Vorzugsweise bildet die Silberverbindung unter 300°C, insbesondere unter 250°C, metallisches Silber. Geeignete Silberverbindungen sind Silberoxid, Silbercarbonat und insbesondere organische Silberverbindungen. Besonders bewährt hat sich Silberlaktat.It is significant that the paste in addition to its organic constituents such as solvents and / or carboxylic acids from 2 to 20 wt .-%, in particular 5 to 15 wt .-% of a readily decomposable silver compound, which allows processing as with soft solder below 400 ° C. becomes. Preferably, the silver compound forms below 300 ° C, in particular below 250 ° C, metallic silver. Suitable silver compounds are silver oxide, silver carbonate and in particular organic silver compounds. Silver lactate has proven particularly useful.

Es wird vermutet, dass die erfindungsgemäß angewendeten Pasten und Verfahren auf der Bildung von hochreaktivem in situ erzeugtem Silber beruhen, das die Kontaktflächen und die gegebenenfalls in der Paste vorliegenden Feststoffe miteinander verbindet.It it is assumed that the inventively used Pastes and methods based on the formation of highly reactive in situ generated Silver are based on the contact surfaces and, where appropriate in the paste present solids together.

In einer weiteren bevorzugten Ausführung wird eine Paste mit einer leicht zersetzlichen Silberverbindung und Kupferpulver verwendet. Die Teilchengröße des Kupferpulvers beträgt vorzugsweise unter 10 μm.In Another preferred embodiment is a paste with an easily decomposable silver compound and copper powder used. The particle size of the copper powder is preferably less than 10 microns.

Die erfindungsgemäß verwendete Paste eignet sich weiterhin zur Verbindung von unedlen Metalloberflächen, beispielsweise Kupferoberflächen.The Paste used according to the invention is also suitable for the connection of non-precious metal surfaces, for example Copper surfaces.

Erfindungsgemäß wird neben Silberoberflächen auch auf Kupfer- und Nickel-Gold-Oberflächen eine feste Verbindung mit sehr guter elektrischer Leitfähigkeit schon bei ungefähr 230°C gesintert. Die Zugbelastung der Verbindungen beträgt ungefähr 50 MPa.According to the invention in addition to silver surfaces also on copper and nickel-gold surfaces one solid connection with very good electrical conductivity already sintered at about 230 ° C. The tensile load of the compounds is about 50 MPa.

Vorzugsweise ist die Kontaktierungspaste harzfrei. Insbesondere wird ein Gel gemäß DE 10 2005 053 553 A1 mit einer leicht zersetzbaren Silberverbindung und gegebenenfalls noch mit einem Metallpulver wie Silberflakes, Nanosilber oder Kupferpulver gemischt.Preferably, the contacting paste is resin-free. In particular, a gel according to DE 10 2005 053 553 A1 with a readily decomposable silver compound and optionally mixed with a metal powder such as silver flakes, nano silver or copper powder.

Erfindungsgemäß wird eine Niedertemperatur-Sintertechnik (NTV) geschaffen, die die Bonddraht-Technik zurückdrängen wird, da das beidseitige Erwärmen von Bauteilen mit der erfindungsgemäßen Sinterpaste von Vorteil ist.According to the invention A low-temperature sintering technique (NTV) created using the bonding wire technique push back, since the bilateral heating of components with the sintering paste according to the invention is beneficial.

Erfindungsgemäß wird es ermöglicht, dass die Paste anstatt mit Siebdruck mittels Dispensen und insbesondere Schablonendruck oder ein Sprühverfahren aufgetragen wird.According to the invention it allows the paste to be screened instead of screen printed Dispensing and in particular stencil printing or a spraying process is applied.

Im Folgenden wird die Erfindung anhand von Beispielen mit Bezug auf die Abbildungen verdeutlicht.in the Below, the invention will be described by way of example with reference to FIG the pictures clarifies.

1 zeigt die Befestigung eines Si-Halbleiters auf einem Cu-Substrat; 1 shows the attachment of a Si-semiconductor on a Cu-substrate;

2 zeigt die elektrische, thermische und mechanische Verbindung eines Halbleiters (z. B. Si oder GaAs) mit einem anderen Halbleiter, z. B. (Si oder GaAs) (= Stacked Die); 2 shows the electrical, thermal and mechanical connection of one semiconductor (eg Si or GaAs) to another semiconductor, e.g. B. (Si or GaAs) (= Stacked Die);

3 zeigt die elektrische, thermische und mechanische Verbindung eines Halbleiters auf einer Metallisierung (Flip Chip); 3 shows the electrical, thermal and mechanical connection of a semiconductor on a metallization (flip chip);

4 zeigt die elektrische, thermische und mechanische Verbindung eines elektronischen Bauteils mit einem anderen elektronischen Bauteil, wobei das eine Bauteil auf dem anderen Bauteil befestigt wird (Package an Package/PoP); 4 shows the electrical, thermal and mechanical connection of an electronic component with another electronic component, wherein the one component is mounted on the other component (Package on Package / PoP);

5 zeigt die elektrische, thermische und mechanische Verbindung einer Solarzelle, auf einem Substrat oder Kühlkörper aus Metall, Keramik oder Kunststoff; 5 shows the electrical, thermal and mechanical connection of a solar cell, on a substrate or heat sink made of metal, ceramic or plastic;

1 zeigt die Befestigung eines LED oder Si-Halbleiters 2 auf einer Leiterbahn 1, mit einer erfindungsgemäß hergestellten Silberschicht 3. Der Chip 2 ist elektrisch über Bändchen 5 mit der Bahn verbunden, die ebenfalls mit Silberschichten 3 befestigt sind. Leiterbahnen und Bändchen aus Kupfer oder Silber haben sich bewährt, insbesondere auf einem elektrisch isolierendem Trägersubstrat fixierte Leiterbahnen. 1 shows the attachment of an LED or Si semiconductor 2 on a track 1 , with a silver layer produced according to the invention 3 , The chip 2 is electric via ribbon 5 connected by rail, which also has silver layers 3 are attached. Circuits and ribbons made of copper or silver have proven useful, in particular on an electrically insulating carrier substrate fixed printed conductors.

Mit einer erfindungsgemäßen Kontaktierungspaste aus einem Gel gemäß DE 10 2005 053 553 A1 , in dem Silberlaktat neben Silberflocken (Flakes) dispergiert ist, wird ein reiner Silberkontakt 3 hergestellt, der naturgemäß die beste Wärmeleitfähigkeit aufweist und unter Dauertemperaturbelastung des Chips 2 oder LED's keine Alterung zeigt.With a contacting paste according to the invention from a gel according to DE 10 2005 053 553 A1 , in which silver lactate is dispersed next to silver flakes (flakes), becomes a pure silver contact 3 produced, which naturally has the best thermal conductivity and under continuous thermal stress of the chip 2 or LED's showing no aging.

Zur Herstellung des Silberkontakts haben sich Umluftkammertrockenschränke oder Durchlauföfen mit Heizplattensystemen oder Stempel (wie Flipchipbonder oder Die Sonder) jeweils mit regelbarem Temperaturprofil unter folgenden Betriebsbedingungen bewährt: Temperaturprofil während der Kontaktierung:

  • Aufheizgeschwindigkeit ≥ 0,5 K/s;
  • Endtemperatur 230–400°C,
  • Prozesszeit vom Aufheizen bis zum Abkühlen 5–60 min
  • Ofenatmosphäre: Luft oder Stickstoff (Restsauerstoffgehalt > 1000 ppm) oder Formiergas (Restsauerstoffgehalt > 1000 ppm) oder Vakuum > 10 mbar (Restsauerstoffgehalt > 100 ppm)
For the production of the silver contact, circulating air drying ovens or continuous ovens with heating plate systems or stamps (such as flipchip bonder or Die Sonder) have each proven with adjustable temperature profile under the following operating conditions: Temperature profile during contacting:
  • Heating rate ≥ 0.5 K / s;
  • Final temperature 230-400 ° C,
  • Process time from heating to cooling 5-60 min
  • Oven atmosphere: air or nitrogen (residual oxygen content> 1000 ppm) or forming gas (residual oxygen content> 1000 ppm) or vacuum> 10 mbar (residual oxygen content> 100 ppm)

Bei einer Aufheizrate unter 0,3 K/s oder einer Endtemperatur unter 200 oder einer Hitzbehandlung unter 5 Minuten oder einem Vakuum unter 10 mbar erfolgt keine brauchbare Verfestigung, so dass keine belastbare Silberschicht erhalten wird.at a heating rate below 0.3 K / s or a final temperature below 200 or a heat treatment under 5 minutes or a vacuum below 10 mbar is no useful solidification, so no resilient Silver layer is obtained.

Die Höhe der Endtemperatur wird durch die Temperaturempfindlichkeit der Bauteile bestimmt. Luftatmosphäre ist die bevorzugte Sinteratmosphäre. Stickstoff oder Formiergas dienen dem Schutz der Cu-Substratoberfläche vor Oxidation. Vakuum, insbesondere zwischen 100 und 300 mbar vermeidet zusätzlich Lufteinschlüsse.The Height of the final temperature is determined by the temperature sensitivity determined the components. Air atmosphere is the preferred Sintering atmosphere. Nitrogen or forming gas serve the Protection of the Cu substrate surface from oxidation. Vacuum, in particular between 100 and 300 mbar avoids additionally Air pockets.

Zur Herstellung einer Si-Chip-Befestigung nach 1 wird eine Paste aus 80 Gew.-% Silber, 5 Gew.-% Silberlaktat und 15 Gew.-% Gel gemäß DE 10 2005 053 553 A1 auf ein strukturiertes 2 mm dickes und 10 mm breites Cu-Substrat 1 aufgetragen. Dann wird der Chip auf die Paste gesetzt und der Rohling im Ofen 45 bis 60 Minuten auf 230°C erhitzt. Der dabei erzeugte Silberkontakt 3 ist der bestmögliche Wärmeleiter, mit uneingeschränkter Zuverlässigkeit für die Chip-Anwendung. Der Kontakt 3 ist für weitaus höhere Temperaturen als 230°C beständig.For producing a Si chip attachment to 1 is a paste of 80 wt .-% silver, 5 wt .-% silver lactate and 15 wt .-% gel according to DE 10 2005 053 553 A1 on a structured 2 mm thick and 10 mm wide Cu substrate 1 applied. Then the chip is placed on the paste and the blank is heated in the oven for 45 to 60 minutes at 230 ° C. The resulting silver contact 3 is the best possible heat conductor, with unrestricted reliability for the chip application. The contact 3 is resistant to much higher temperatures than 230 ° C.

Mit einer erfindungsgemäßen Kontaktierungspaste aus einem Gel gemäß DE 10 2005 053 553 A1 , in dem Silberlaktat neben Silberflocken und Kupferflocken dispergiert ist, wird für die Kontaktierung des Chips mit der DCB ein reiner Metallkontakt hergestellt, der eine sehr gute Wärmeleitfähigkeit aufweist und unter der Dauertemperaturbelastung des Leistungsmoduls keine Alterung zeigt. Dieser Kontakt ist besonders aufgrund der hohen Stromdichten bei DCB Anwendungen besser geeignet als ein reiner Silberkontakt.With a contacting paste according to the invention from a gel according to DE 10 2005 053 553 A1 , in which silver lactate is dispersed in addition to silver flakes and copper flakes, a pure metal contact is made for the contacting of the chip with the DCB, which has a very good thermal conductivity and shows no aging under the constant temperature load of the power module. This contact is more suitable than a pure silver contact, especially due to the high current densities in DCB applications.

Analog zum Beispiel gemäß 1 wird für die Beispiele gemäß 2, 3, 4 und 5 mit einer erfindungsgemäßen Kontaktierungspaste aus einem Gel gemäß DE 10 2005 053 553 A1 , in dem Silberkarbonat neben Silberflocken (Flakes) dispergiert ist, ein reiner Silberkontakt herge stellt, der naturgemäß auch die beste elektrische Leitfähigkeit aufweist und bei den angewendeten Temperaturen des Sensors absolut zuverlässig ist.Analogous to the example according to 1 is for the examples according to 2 . 3 . 4 and 5 with a contacting paste according to the invention from a gel according to DE 10 2005 053 553 A1 , in which silver carbonate in addition to silver flakes (flakes) is dispersed, a pure silver contact Herge provides, which naturally also has the best electrical conductivity and is absolutely reliable at the applied temperatures of the sensor.

Analog zu 1 wird zur Herstellung einer Chip-Kontaktierung nach 3 bis 5 eine Paste aus 80 Gew.-% Silber, 5 Gew.-% Silberkarbonat und 15 Gew.-% Gel gemäß DE 10 2005 053 553 A1 auf den Leiterrahmen 1 aufgetragen, der ggf. auf einem elektrisch isolierenden Substrat 4 fixiert ist. Dann wird der Chip 2 auf die Paste gesetzt und der Rohling im Ofen 30 bis 60 Minuten auf 260°C bis 270°C erhitzt. Der dabei erzeugte Silberkontakt 3 ist der bestmögliche elektrische Leiter mit der gewünschten Zuverlässigkeit für die Sensor-Anwendung.Analogous to 1 is used to make a chip contact 3 to 5 a paste of 80% by weight of silver, 5% by weight of silver carbonate and 15% by weight of gel according to DE 10 2005 053 553 A1 on the ladder frame 1 applied, if necessary, on an electrically insulating substrate 4 is fixed. Then the chip 2 placed on the paste and the blank in the oven for 30 to 60 minutes at 260 ° C to 270 ° C heated. The resulting silver contact 3 is the best possible electrical conductor with the desired reliability for the sensor application.

Mit einer erfindungsgemäßen Kontaktierungspaste aus einem Gel gemäß DE 10 2005 053 553 A1 , in dem Silberlaktat neben Silberflocken dispergiert ist, wird für die Kontaktierung des Silberbändchens mit dem Chip ein reiner Metallkontakt hergestellt, der eine sehr gute elektrische Leitfähigkeit aufweist und unter der Dauertemperaturbelastung des Chips keine Alterung zeigt.With a contacting paste according to the invention from a gel according to DE 10 2005 053 553 A1 , in which silver lactate is dispersed in addition to silver flakes, a pure metal contact is made for the contacting of the silver ribbon with the chip, which has a very good electrical conductivity and shows no aging under the permanent temperature load of the chip.

Analog zu 1 sind die Silberkontakte 3 in den 3–6 mit 3a für Wärmeübertragungskontakte und mit 3b für elektrische Kontakte bezeichnet.Analogous to 1 are the silver contacts 3 in the 3 - 6 With 3a for heat transfer contacts and with 3b for electrical contacts.

In 2 ist die elektrische, thermische und mechanische Verbindung eines Halbleiters z. B. Si oder GaAs mit einem anderen Halbleiter, z. B. Si oder GaAs (= Stacked Die) Diese Schema gilt sowohl für Halbleiter, deren Vorderseiten miteinander verbunden werden oder wobei die Rückseite des einen Bauteils (Back end) mit der Oberseite des anderen Bauteils verbunden wird (Front end).In 2 is the electrical, thermal and mechanical connection of a semiconductor z. B. Si or GaAs with another semiconductor, for. B. Si or GaAs (= Stacked Die) This scheme applies to both semiconductors whose front sides are connected to each other or wherein the back of the one component (back end) is connected to the top of the other component (front end).

Nach 3 sind die Vorderseiten der Halbleiter 2 über Bumps 6 aus Cu, Ag oder Au mit einem Silberkontakt 3b auf einer Metallisierung fixiert wobei die Metallisierung elektrisch mit der Kupferbahn 1 verbunden ist (Flip Chip).To 3 are the fronts of the semiconductors 2 about bumps 6 made of Cu, Ag or Au with a silver contact 3b fixed on a metallization with the metallization electrically connected to the copper track 1 is connected (flip chip).

In 4 ist die elektrische, thermische und mechanische Verbindung 3 eines elektronischen Bauteils gemäß 1 mit einem weiteren elektronischen Bauteil gemäß 1 dargestellt, wobei das eine Bauteil auf dem anderen Bauteil befestigt wird (Package an Package/PoP). Die Bauteile werden erfindungsgemäß nicht mehr nach der Herstellung der einzelnen Bauteile miteinander verbunden, sondern es werden bereits bei der Herstellung der Silberkontakte 3 der Bauteile auch die Silberkontakte 3 zur Befestigung der Bauteile aneinander hergestellt.In 4 is the electrical, thermal and mechanical connection 3 an electronic component according to 1 with another electronic component according to 1 shown, wherein the one component is mounted on the other component (Package to Package / PoP). The components are no longer connected to each other according to the invention after the production of the individual components, but it is already in the production of the silver contacts 3 the components also the silver contacts 3 for fastening the components together.

In 5 ist die elektrische, thermische und mechanische Verbindung 3a einer Solarzelle 8, auf einem Substrat oder Kühlkörper 9 aus Metall, Keramik oder Kunststoff dargestellt. Die Kühlung der Solarzelle 8 ist erheblich für deren Leistung und Lebensdauer, da die Betriebstemperatur einer Solarzelle 8 durchaus über der Herstellungstemperatur des Silberkontakts 3a liegen kann, mit dem die Solarzelle 8 auf dem Kühlkörper 9 befestigt ist.In 5 is the electrical, thermal and mechanical connection 3a a solar cell 8th , on a substrate or heat sink 9 made of metal, ceramic or plastic. The cooling of the solar cell 8th is significant for their performance and lifetime, given the operating temperature of a solar cell 8th well above the manufacturing temperature of the silver contact 3a can lie, with which the solar cell 8th on the heat sink 9 is attached.

Insbesondere bei Solarzellen ist eine zuverlässige elektrische, thermische und mechanische Verbindung 3 eines elektrischen Bauelementes, mit anderen Bauelementen der gleichen Funktionalität oder anderer elektrischer oder elektronischer Funktionalität erforderlich. Die in Serie angeordneten Solarzellen 8 sind elektrisch über Silberkontakte 3b und Silber oder Kupferbändchen an Metallkontakte angeschlossen um den in den Solarzellen 8 erzeugten elektrischen Strom abzuführen.Especially with solar cells is a reliable electrical, thermal and mechanical connection 3 an electrical component, with other components of the same functionality or other electrical or electronic functionality required. The solar cells arranged in series 8th are electrically via silver contacts 3b and silver or copper tapes connected to metal contacts around the in the solar cells 8th dissipate generated electricity.

ZITATE ENTHALTEN IN DER BESCHREIBUNGQUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • - WO 2004/026526 [0003] WO 2004/026526 [0003]
  • - US 6951666 [0004] - US 6951666 [0004]
  • - DE 102005053553 A1 [0010, 0018, 0028, 0032, 0033, 0034, 0035, 0036] - DE 102005053553 A1 [0010, 0018, 0028, 0032, 0033, 0034, 0035, 0036]

Claims (12)

Verfahren zum Zusammenfügen zweier zur Kontaktierung vorgesehener Elemente, die innerhalb eines Ofens oder auf einer Heizplatte an der Kontaktstelle mechanisch aneinander befestigt werden und über die Kontaktstelle elektrisch oder wärmeleitfähig mittels Kontaktierungspaste verbunden werden, dadurch gekennzeichnet, dass die Kontaktierungspaste 2 bis 20 Gew.-% Silberverbindung aufweist, wobei aus der Silberverbindung elementares Silber zwischen den Kontaktflächen gebildet wird.A method for assembling two elements provided for contacting, which are mechanically fastened to one another within a furnace or on a hot plate at the contact point and are electrically or thermally conductively connected via the contact point by means of contacting paste, characterized in that the contacting paste 2 to 20 wt .-% silver compound wherein elemental silver is formed between the contact surfaces of the silver compound. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Silberverbindung eine organische Silberverbindung oder Silbercarbonat ist.Method according to claim 1, characterized in that that the silver compound is an organic silver compound or Silver carbonate is. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass eine Kontaktfläche unedles Metall in der Oberfläche aufweist.Method according to claim 1 or 2, characterized that a contact surface of base metal in the surface having. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die Verfahrenstemperatur zur Herstellung der Kontaktierung unterhalb von 400°C liegt.Method according to one of claims 1 to 3, characterized in that the process temperature for the production the contact is below 400 ° C. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die Kontaktierung unter Atmosphärendruck erfolgt.Method according to one of claims 1 to 4, characterized in that the contacting under atmospheric pressure he follows. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass eine Paste, die die Silberverbindung aufweist, auf eine Kontaktfläche aufgetragen wird.Method according to one of claims 1 to 5, characterized in that a paste containing the silver compound has been applied to a contact surface. Verfahren nach Anspruch 6, dadurch gekennzeichnet, dass die Paste Kupfer oder Silberpartikel aufweist.Method according to Claim 6, characterized that the paste has copper or silver particles. Verfahren nach Anspruch 6 oder 7, dadurch gekennzeichnet, dass die Paste ein Gel aufweist.Method according to claim 6 or 7, characterized that the paste has a gel. Verfahren, insbesondere nach einem der Ansprüche 1 bis 8, zur Herstellung einer Silber aufweisenden elektrisch leitenden Verbindung zwischen einer elektrischen Anschlussfläche eines elektronischen Bauteils und einer weiteren elektrischen Anschlussfläche zur elektrischen Kontaktierung des elektronischen Bauteils, dadurch gekennzeichnet, dass die Verfahrenstemperatur unterhalb von 240°C liegt.Method, in particular according to one of the claims 1 to 8, for producing a silver-containing electrically conductive Connection between an electrical connection surface an electronic component and a further electrical connection surface for electrical contacting of the electronic component, characterized characterized in that the process temperature is below 240 ° C. Verfahren, insbesondere nach einem der Ansprüche 1 bis 9, zur Herstellung einer Silber aufweisenden elektrischen Verbindung zwischen einer elektrischen Anschlussfläche eines elektronischen Bauteils und einer weiteren elektrischen Anschlussfläche zur elektrischen Kontaktierung des elektronischen Bauteils, dadurch gekennzeichnet, dass der Anpressdruck für die Verbindung der Anschlussflächen unter 5 Atm liegt.Method, in particular according to one of the claims 1 to 9, for the production of a silver having electrical Connection between an electrical connection surface an electronic component and a further electrical connection surface for electrical contacting of the electronic component, thereby characterized in that the contact pressure for the connection the pads are below 5 atm. Verfahren nach einem der Ansprüche 1 bis 10, ausgenommen die Befestigung von DCB's oder LED's auf Kühlkörpern oder die Befestigung eines elektronischen Bauteils auf einer Leiterbahn.Method according to one of claims 1 to 10, except the mounting of DCB's or LED's on heatsinks or the attachment of an electronic component on a conductor track. Verwendung einer Kontaktierungspaste, die eine Silberverbindung in einer organischen Masse aufweist, wobei sich die Silberverbindung unterhalb von 400°C unter Bildung von elementarem Silber zersetzt, dadurch gekennzeichnet, dass die Kontaktierungspaste zur Befestigung von elektronischen Bauteilen aneinander verwendet wird, die über die mit der Kontaktierungspaste erzeugte Befestigungsstelle elektrisch oder wärmeleitfähig miteinander verbunden sind.Use of a contacting paste containing a silver compound in an organic mass, wherein the silver compound below 400 ° C to form elemental silver decomposed, characterized in that the contacting paste for Fastening of electronic components to each other is used the electrically via the attachment point generated with the attachment or thermally conductive connected to each other.
DE102008031893A 2007-09-28 2008-07-08 Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas Withdrawn DE102008031893A1 (en)

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DE102008031893A DE102008031893A1 (en) 2008-07-08 2008-07-08 Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas
EP08016620.0A EP2042260B1 (en) 2007-09-28 2008-09-22 Method and paste for contacting metal surfaces
DK08016620.0T DK2042260T3 (en) 2007-09-28 2008-09-22 METHOD AND FIT FOR ESTABLISHING CONTACT BETWEEN METAL SURFACES
KR1020080094083A KR101102214B1 (en) 2007-09-28 2008-09-25 Method and paste for contacting of metal surfaces
US12/237,660 US20090134206A1 (en) 2007-09-28 2008-09-25 Process and Paste for Contacting Metal Surfaces
CN201110312205.XA CN102430875B (en) 2007-09-28 2008-09-28 Method and mastic for multiple metal covering contactings
CN2008101688371A CN101431038B (en) 2007-09-28 2008-09-28 Method and paste for contacting metal surfaces
JP2008250495A JP5156566B2 (en) 2007-09-28 2008-09-29 Metal surface connection method and paste therefor
US12/615,516 US20100055828A1 (en) 2007-09-28 2009-11-10 Process and paste for contacting metal surfaces
KR1020110060009A KR20110088477A (en) 2007-09-28 2011-06-21 Method and paste for contacting of metal surfaces
HRP20140178AT HRP20140178T1 (en) 2007-09-28 2014-02-27 Method and paste for contacting metal surfaces

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013156570A1 (en) 2012-04-20 2013-10-24 Technische Universität Berlin Solder material, method for the production thereof, and use thereof to join metal substrates without pressure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542669B2 (en) * 1974-09-27 1979-06-13 General Electric Co., Schenectady, N.Y. (V.St.A.) Circuit board, process for its manufacture and its use
DE3346050A1 (en) * 1983-12-20 1985-06-27 Siemens AG, 1000 Berlin und 8000 München Connection lead for an electrical component having a ceramic body
WO2004026526A1 (en) 2002-09-18 2004-04-01 Ebara Corporation Bonding material and bonding method
US6951666B2 (en) 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
DE102005053553A1 (en) 2005-11-08 2007-05-16 Heraeus Gmbh W C Solder pastes with resin-free flux
DE102007046901A1 (en) * 2007-09-28 2009-04-09 W.C. Heraeus Gmbh Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542669B2 (en) * 1974-09-27 1979-06-13 General Electric Co., Schenectady, N.Y. (V.St.A.) Circuit board, process for its manufacture and its use
DE3346050A1 (en) * 1983-12-20 1985-06-27 Siemens AG, 1000 Berlin und 8000 München Connection lead for an electrical component having a ceramic body
US6951666B2 (en) 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
WO2004026526A1 (en) 2002-09-18 2004-04-01 Ebara Corporation Bonding material and bonding method
DE102005053553A1 (en) 2005-11-08 2007-05-16 Heraeus Gmbh W C Solder pastes with resin-free flux
DE102007046901A1 (en) * 2007-09-28 2009-04-09 W.C. Heraeus Gmbh Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013156570A1 (en) 2012-04-20 2013-10-24 Technische Universität Berlin Solder material, method for the production thereof, and use thereof to join metal substrates without pressure
DE102012206587A1 (en) 2012-04-20 2013-11-07 Technische Universität Berlin Solder material, process for its production and its use for pressure-free joining of metallic substrates
US10065273B1 (en) 2012-04-20 2018-09-04 Nano-Join Gmbh Solder material, method for the production thereof and use thereof to join metal substrates without pressure

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