DE102007063017B4 - Substrate support for gas diffusion furnaces - Google Patents
Substrate support for gas diffusion furnaces Download PDFInfo
- Publication number
- DE102007063017B4 DE102007063017B4 DE200710063017 DE102007063017A DE102007063017B4 DE 102007063017 B4 DE102007063017 B4 DE 102007063017B4 DE 200710063017 DE200710063017 DE 200710063017 DE 102007063017 A DE102007063017 A DE 102007063017A DE 102007063017 B4 DE102007063017 B4 DE 102007063017B4
- Authority
- DE
- Germany
- Prior art keywords
- substrate holder
- boat
- support rods
- lower support
- holder according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
- H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
- H01L21/67343—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates characterized by a material, a roughness, a coating or the like
Abstract
Substrathalterung für Gasdiffusionsöfen, umfassend einen Rahmen mit Längsträgern, Querträgern und unteren Supportstäben sowie Führungseinrichtungen zur Positionierung und Führung der Substrathalterung im Innern des Gasdiffusionsofens, und eine Mehrzahl von Substrataufnahmen zur Aufnahme je eines Substrats, dadurch gekennzeichnet, dass die unteren Supportstäbe zylindrisch und auf den unteren Längsträgern des Bootes rollbar sind, und dass die Substrathalterung aus einem korrosionsfesten und chemisch beständigen Metall oder Kunststoff oder Verbundmaterial gefertigt ist.Substrate holder for gas diffusion furnace, comprising a frame with longitudinal beams, cross members and lower support rods as well as guide devices for positioning and guiding the substrate holder inside the gas diffusion furnace, and a plurality of substrate receptacles for receiving a substrate each, characterized in that the lower support rods are cylindrical and on the lower Longitudinal beams of the boat are rollable, and that the substrate holder is made of a corrosion-resistant and chemically resistant metal or plastic or composite material.
Description
In Gasdiffusionsöfen werden in einem thermisch induzierten Gasphasendiffusionsprozess chemische Reaktionen auf der Oberfläche von Substraten durchgeführt. Derartige Gasdiffusionsöfen umfassen meist ein großvolumiges Behältersystem zur Aufnahme von mehreren Substraten und sind meist mit einer Einrichtung zur Erzeugung eines Vakuums verbunden. Des Weiteren sind diese Gasdiffusionsöfen mit Heizeinrichtungen versehen, die zur gezielten Aufheizung bzw. Temperaturführung der Substrate geeignet sind. Bei diesen Heizeinrichtungen handelt es sich häufig um außen angeordnete Heizelemente, die durch Strahlungsheizung die Substrate erwärmen. In speziellen Gasdiffusionsöfen, bei denen Reaktionsgase zur Anwendung kommen, die mit Metalloberflächen aggressiv reagieren, wird als Baustoff für das Behältersystem Quarz eingesetzt. Dieses Gefäßsystem aus Quarzglas ermöglicht es, dass die Wärmestrahlung der außerhalb des Behälters oder Gefäßes angeordneten Strahlungsheizer ungehindert die Substrate erreicht und zur Aufheizung dieser führt.In gas diffusion furnaces chemical reactions are carried out on the surface of substrates in a thermally induced gas-phase diffusion process. Such gas diffusion furnaces usually comprise a large-volume container system for receiving a plurality of substrates and are usually connected to a device for generating a vacuum. Furthermore, these gas diffusion furnaces are provided with heating devices which are suitable for the targeted heating or temperature control of the substrates. These heaters are often arranged on the outside heating elements that heat the substrates by radiant heating. In special gas diffusion furnaces, which use reaction gases that react aggressively with metal surfaces, quartz is used as the building material for the tank system. This vessel system made of quartz glass makes it possible that the heat radiation of the arranged outside the container or vessel radiant heater unhindered reaches the substrates and leads to the heating of these.
Die Substrate selbst sind in einem entsprechend ausgebildeten Gestell oder Carrier, auch Boot genannt, nebeneinander angeordnet. Das Boot ist meist an seinen oberen Querträgern in sogenannte Gabeln eingehängt, um es im Ofen in Position zu halten. Dieses Boot muss neben den mechanischen Belastungen, die durch das Gewicht der Substrate entstehen, auch den chemischen Belastungen durch die eingesetzten Reaktivgase bei den auftretenden Temperaturen widerstehen.The substrates themselves are arranged side by side in a correspondingly designed frame or carrier, also called a boat. The boat is usually hung on its upper cross members in so-called forks to hold it in the oven in position. In addition to the mechanical stresses that result from the weight of the substrates, this boat must also be able to withstand the chemical stresses caused by the reactive gases used at the temperatures that occur.
Typischerweise sind solche Boote aus Quarzglas gefertigt, da Quarz auch bei hohen Temperaturen chemisch nicht mit den Reaktivgasen reagiert. Da Quarz für Wärmestrahlung transparent ist, können die einzelnen Segmente eines solchen Quarzbootes ausreichend dick ausgeführt werden um die nötige mechanische Festigkeit zu erlangen. Nachteile davon sind neben der geringen mechanischen Belastbarkeit bezüglich Druck der Substrate in den Halteschlitzen und den Aufnahmepunkten und eventuellen Stößen auch der erhöhte Gasstromwiderstand solch dicker Quarzsegmente, die eine homogene Gasverteilung behindern.Typically, such boats are made of quartz glass because quartz does not react chemically with the reactive gases even at high temperatures. Since quartz is transparent to thermal radiation, the individual segments of such a quartz boat can be made sufficiently thick to obtain the necessary mechanical strength. Disadvantages thereof are, in addition to the low mechanical strength with respect to pressure of the substrates in the retaining slots and the receiving points and possible shocks and the increased gas flow resistance of such thick quartz segments, which hinder a homogeneous gas distribution.
Substrathalterungen für Gasdiffusionsöfen sind beispielsweise aus den Druckschriften
Während der Aufheiz- und Halte- und Abkühlphasen kommt es zu einer deutlichen Verbiegung der Substrate in horizontaler Richtung. Dabei ist zu beobachten, dass die Verbiegung der äußeren beiden Substrate bezüglich des Substratstapels oder Batches zuletzt beginnen und am ehesten zurückgehen, während die weiter innen angeordneten Substrate länger verbogen bzw. horizontal ausgelenkt bleiben. Bei einem zu geringen Abstand der äußeren Scheiben zur nächst inneren Scheibe kann es dabei zur Berührung der Substrate bis hin zum Bruch der Substrate oder des Bootes kommen.During the heating and holding and cooling phases, there is a significant bending of the substrates in the horizontal direction. It can be observed that the bending of the outer two substrates with respect to the substrate stack or batch begins last and most likely to decrease, while the substrates arranged further inside remain bent longer or horizontally deflected. If the distance between the outer disks and the next inner disk is too small, the substrates may come into contact with each other until the substrates or the boat break.
Zur Verbesserung bekannter Substrathalterungen sollen geeignete Materialien und ein geeignetes Design für das Boot gefunden werden, wobei die mechanischen, thermischen und chemischen Aspekte gleichermaßen berücksichtigt werden.To improve known substrate supports, suitable materials and design for the boat should be found, with equal consideration of mechanical, thermal and chemical aspects.
Es wird daher vorgeschlagen, bei einer Substrathalterung für Gasdiffusionsöfen, die einen Rahmen mit Längsträgern, Querträgern und unteren Supportstäben sowie Führungseinrichtungen zur Positionierung und Führung der Substrathalterung im Innern des Gasdiffusionsofens, und eine Mehrzahl von Substrataufnahmen zur Aufnahme je eines Substrats umfasst, vorgeschlagen, dass die unteren Supportstäbe zylindrisch und auf den unteren Längsträgern des Bootes rollbar sind, und dass die Substrathalterung aus einem korrosionsfesten und chemisch beständigen Metall oder Kunststoff oder Verbundmaterial gefertigt ist.It is therefore proposed, in a substrate holder for gas diffusion ovens, comprising a frame with side rails, cross beams and lower support bars and guide means for positioning and guiding the substrate holder inside the gas diffusion furnace, and a plurality of substrate receptacles for receiving each substrate, proposed that lower support rods are cylindrical and rollable on the lower longitudinal members of the boat, and that the substrate holder is made of a corrosion-resistant and chemically resistant metal or plastic or composite material.
Das Boot ist aus korrosionsfesten und chemisch beständigen Metallen oder gleichwertig mechanisch stabilen Materialien, z. B. Molybdän oder CFC (Carbon Fiber reinforced Carbon = Kohlenstofffaserverstärkter Kohlenstoff) gefertigt, die eine hohe Festigkeit besitzen, mechanisch und chemisch ausreichend stabil sind und keine ungewollte Kontamination der Substratbeschichtung bewirken.The boat is made of corrosion-resistant and chemically resistant metals or equivalent mechanically stable materials, eg. As molybdenum or CFC (carbon fiber reinforced carbon = carbon fiber reinforced carbon) made, which have a high strength, are mechanically and chemically sufficiently stable and cause no unwanted contamination of the substrate coating.
Die unteren Supportstäbe sind zylindrisch und rollbar auf den unteren Längsträgern des Bootes gestaltet, um die Reibungskraft zwischen Substrat und Auflagepunkt, hervorgerufen durch die Substrat- und Bootausdehnung, zu verringern.The lower support rods are cylindrical and rollable on the lower side rails of the boat to reduce the frictional force between the substrate and support point caused by substrate and boat expansion.
Weiterhin können eines oder mehrere der folgenden Merkmale vorgesehen sein:
Die einzelnen Quer- und Längssegmente des Bootes bestehen aus ausreichend dünnen Stäben, die den Gasstrom nur minimal behindern.Furthermore, one or more of the following features may be provided:
The individual transverse and longitudinal segments of the boat consist of sufficiently thin rods, which impede the gas flow only minimally.
Mindestens zwei untere Supportstäbe, auf denen die Substrate aufsitzen, sind bezüglich der geometrischen Substratausdehnung weit außen angeordnet, um die Reibungskraft zwischen Substrat und Auflagepunkt, hervorgerufen durch die Substratverbiegung, zu verringern.At least two lower support bars on which the substrates are seated are located far outwardly of the geometric substrate extent to reduce the frictional force between the substrate and support point caused by the substrate bending.
Die Supportstäbe sind ausreichend lang, dass die Substrate auch bei deutlicher Verbiegung während des Heizens oder Kühlens nicht von diesen unteren Stäben herunterrutschen können.The support bars are sufficiently long that the substrates can not slip off these lower bars even with significant deflection during heating or cooling.
Die unteren Supportstäbe weisen Führungsschlitze bzw. Führungsaussparungen oder -rillen auf, um den geforderten Substratabstand untereinander zu gewährleisten.The lower support rods have guide slots or guide recesses or grooves in order to ensure the required substrate spacing with each other.
Die Substrate sind an den Stirnseiten in Führungsschlitzen oder Führungsaussparungen des Bootes geführt, um den geforderten Substratabstand untereinander zu gewährleisten.The substrates are guided at the end faces in guide slots or guide recesses of the boat to ensure the required substrate spacing with each other.
Die Führungsschlitze bzw. Führungsaussparungen des Bootes und gegebenenfalls der unteren Supportstäbe sind nicht äquidistant.The guide slots or guide recesses of the boat and possibly the lower support rods are not equidistant.
Zumindest die beiden jeweils äußeren Führungsschlitze bzw. Führungsaussparungen des Bootes und gegebenenfalls der unteren Supportstäbe weisen einen größeren Abstand zu den in einwärtiger Richtung nächstgelegenen inneren Führungsschlitzen bzw. Führungsaussparungen des Bootes und gegebenenfalls der unteren Supportstäbe aufweisen als alle weiteren inneren Führungsschlitze bzw. Führungsaussparungen des Bootes.At least the two respective outer guide slots or guide recesses of the boat and possibly the lower support rods have a greater distance from the inwardmost direction closest inner guide slots or guide recesses of the boat and possibly the lower support rods than all other inner guide slots or guide recesses of the boat.
Die Abstände der Führungsschlitze bzw. Führungsaussparungen des Bootes und gegebenenfalls der unteren Supportstäbe werden von der Mitte innen beginnend nach außen immer größer.The distances of the guide slots or guide recesses of the boat and possibly the lower support rods are getting larger from the center inside out.
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200710063017 DE102007063017B4 (en) | 2007-12-21 | 2007-12-21 | Substrate support for gas diffusion furnaces |
NL2002362A NL2002362C (en) | 2007-12-21 | 2008-12-22 | SUBSTRATE HOLDER FOR GAS DIFFUSION OVENS. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200710063017 DE102007063017B4 (en) | 2007-12-21 | 2007-12-21 | Substrate support for gas diffusion furnaces |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102007063017A1 DE102007063017A1 (en) | 2009-06-25 |
DE102007063017B4 true DE102007063017B4 (en) | 2012-03-01 |
Family
ID=40689959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200710063017 Expired - Fee Related DE102007063017B4 (en) | 2007-12-21 | 2007-12-21 | Substrate support for gas diffusion furnaces |
Country Status (2)
Country | Link |
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DE (1) | DE102007063017B4 (en) |
NL (1) | NL2002362C (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120168143A1 (en) * | 2010-12-30 | 2012-07-05 | Poole Ventura, Inc. | Thermal Diffusion Chamber With Heat Exchanger |
DE102013105818B4 (en) | 2013-06-06 | 2017-01-26 | Von Ardenne Gmbh | Housing for receiving a plurality of plate-shaped substrates |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3183131A (en) * | 1961-08-23 | 1965-05-11 | Motorola Inc | Semiconductor diffusion method |
US4355974A (en) * | 1980-11-24 | 1982-10-26 | Asq Boats, Inc. | Wafer boat |
EP0100539A2 (en) * | 1982-07-30 | 1984-02-15 | Tecnisco Ltd. | Assembled device for supporting semiconductor wafers or the like |
DE3807710C2 (en) * | 1988-03-09 | 1991-06-27 | Heraeus Quarzglas Gmbh, 6450 Hanau, De | |
JPH0410530A (en) * | 1990-04-27 | 1992-01-14 | Toshiba Ceramics Co Ltd | Diffusion boat for semiconductor |
JPH0444315A (en) * | 1990-06-12 | 1992-02-14 | Toshiba Ceramics Co Ltd | Carbon jig for semiconductor diffusion furnace |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4572101A (en) * | 1983-05-13 | 1986-02-25 | Asq Boats, Inc. | Side lifting wafer boat assembly |
FR2644237B1 (en) * | 1989-03-07 | 1991-06-14 | Doeuvre Jean Pierre | AUTOMATIC APPARATUS FOR DIMENSIONAL CONTROL OF PLATFORM HOLDER PLATFORMS |
CA2082819C (en) * | 1990-05-18 | 2001-10-02 | Bp Chemicals (Hitco) Inc. | Materials for chemical vapor deposition processes |
JPH06310438A (en) * | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | Substrate holder and apparatus for vapor growth of compound semiconductor |
US5788304A (en) * | 1996-05-17 | 1998-08-04 | Micron Technology, Inc. | Wafer carrier having both a rigid structure and resistance to corrosive environments |
US20050205501A1 (en) * | 2004-03-18 | 2005-09-22 | Juan Chuang | Reformed wafer boat |
-
2007
- 2007-12-21 DE DE200710063017 patent/DE102007063017B4/en not_active Expired - Fee Related
-
2008
- 2008-12-22 NL NL2002362A patent/NL2002362C/en not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3183131A (en) * | 1961-08-23 | 1965-05-11 | Motorola Inc | Semiconductor diffusion method |
US4355974A (en) * | 1980-11-24 | 1982-10-26 | Asq Boats, Inc. | Wafer boat |
US4355974B1 (en) * | 1980-11-24 | 1988-10-18 | ||
EP0100539A2 (en) * | 1982-07-30 | 1984-02-15 | Tecnisco Ltd. | Assembled device for supporting semiconductor wafers or the like |
DE3807710C2 (en) * | 1988-03-09 | 1991-06-27 | Heraeus Quarzglas Gmbh, 6450 Hanau, De | |
JPH0410530A (en) * | 1990-04-27 | 1992-01-14 | Toshiba Ceramics Co Ltd | Diffusion boat for semiconductor |
JPH0444315A (en) * | 1990-06-12 | 1992-02-14 | Toshiba Ceramics Co Ltd | Carbon jig for semiconductor diffusion furnace |
Also Published As
Publication number | Publication date |
---|---|
NL2002362A1 (en) | 2009-06-23 |
NL2002362C (en) | 2010-03-18 |
DE102007063017A1 (en) | 2009-06-25 |
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Effective date: 20120602 |
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