DE102007056581A1 - Electrical load i.e. motor vehicle blower motor, controlling device, has connection elements brought out from housing, and chip and resistance element, which are electrically connected by connection elements - Google Patents

Electrical load i.e. motor vehicle blower motor, controlling device, has connection elements brought out from housing, and chip and resistance element, which are electrically connected by connection elements Download PDF

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Publication number
DE102007056581A1
DE102007056581A1 DE102007056581A DE102007056581A DE102007056581A1 DE 102007056581 A1 DE102007056581 A1 DE 102007056581A1 DE 102007056581 A DE102007056581 A DE 102007056581A DE 102007056581 A DE102007056581 A DE 102007056581A DE 102007056581 A1 DE102007056581 A1 DE 102007056581A1
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Prior art keywords
housing
semiconductor chip
connection elements
resistance element
electrically connected
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DE102007056581A
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German (de)
Inventor
Otto Knittel
Hans-Dieter Röhling
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Behr Hella Thermocontrol GmbH
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Behr Hella Thermocontrol GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The device has a shunt resistance element (20) arranged in a housing (12), and detecting current through a semiconductor chip (18). The element is thermally coupled with a metallic element (16), where the semiconductor chip and the shunt resistance element are equipped in an insulation material (14) of the housing. Drain, source and gate connection elements (24, 26, 28) of the transistor and connection elements (30-36) of the housing are brought out from the housing. The chip and the resistance element are electrically connected by the connection elements.

Description

Die Erfindung betrifft eine Vorrichtung zur Ansteuerung eines elektrischen Verbrauchers, bei dem es sich insbesondere um einen Kfz-Gebläsemotor handelt.The The invention relates to a device for controlling an electrical Consumer, which is in particular a motor vehicle blower motor is.

Zur Ansteuerung verschiedenster elektrischer Verbraucher und insbesondere zur Ansteuerung von Kfz-Gebläsemotoren werden kontinuierlich ansteuerbare oder mit pulsbreitenmodulierten Signalen ansteuerbaren Leistungstransistoren verwendet, die geregelt werden. Hierfür ist es erforderlich, den Strom durch den Leistungstransistor zu erfassen. Zu diesem Zweck existieren Leistungstransistoren mit integrierter Stromerfassung auf dem Halbleiterchip, die allerdings mitunter den Stromfluss nur ungenau erfassen können. Wesentlich genauere Strommessungen lassen sich mit extern angeordneten Shunt-Widerständen durchführen, die aus einem hitzebeständigen metallischen Werkstoff bestehen und zumeist in Form eines Metallstreifens ausgebildet sind. Diese Shunt-Widerstände müssen recht niederohmig sein und vergleichsweise hohen thermischen Belastungen standhalten. Die Kühlung dieser außerhalb des Leistungstransistors angeordneter Shunt-Widerstände bereitet mitunter Probleme und verkompliziert den mechanischen und elektrischen Aufbau der Ansteuerungsvorrichtung.to Control of various electrical consumers and in particular for the control of automotive blower motors are continuously controllable or with pulse width modulated Used signals controllable power transistors that regulated become. Therefor it is necessary to use the current through the power transistor too to capture. For this purpose, there are power transistors with integrated Current detection on the semiconductor chip, but sometimes the Can detect current flow only inaccurate. Much more accurate current measurements can be performed with externally arranged shunt resistors, which are made of a heat-resistant metallic Material exist and are usually designed in the form of a metal strip. These shunt resistors have to be relatively low resistance and comparatively high thermal loads withstand. The cooling this outside the power transistor arranged shunt resistors prepares sometimes problems and complicates the mechanical and electrical construction the driving device.

Aufgabe der Erfindung ist es daher, eine Vorrichtung zur Ansteuerung eines elektrischen Verbrauchers, insbesondere eines Kfz-Gebläsemotors zu schaffen, die kompakt ist und eine thermisch optimale Stromdetektion aufweist.task The invention is therefore an apparatus for driving a electrical load, in particular a motor vehicle fan motor to create, which is compact and a thermally optimal current detection having.

Zur Lösung dieser Aufgabe wird mit der Erfindung eine Vorrichtung zur Ansteuerung eines elektrischen Verbrauchers, insbesondere eines Kfz-Gebläsemotors vorgeschlagen, wobei die Vorrichtung versehen ist mit

  • – einem Gehäuse, das elektrisch isolierendes Isolationsmaterial aufweist und an einer Außenseite ein teilweise freiliegendes Metallelement zur thermischen Kühlung und/oder zur thermischen Kopplung mit einem Kühlkörper aufweist,
  • – einem Transistor, der einen in dem Gehäuse angeordneten Halbleiterchip aufweist, welcher mit dem Metallelement thermisch gekoppelt ist,
  • – einem in dem Gehäuse angeordneten und zur Erfassung eines Stroms durch den Halbleiterchip vorgesehenen Shunt-Widerstandselement, das mit dem Metallelement thermisch gekoppelt ist,
  • – wobei der Halbleiterchip und das Shunt-Widerstandselement in das Isolationsmaterial des Gehäuses eingebettet sind, und
  • – aus dem Gehäuse herausgeführten Anschlusselementen, mit denen der Halbleiterchip und das Shunt-Widerstandselement elektrisch verbunden sind.
To solve this problem, the invention proposes a device for controlling an electrical load, in particular a motor vehicle blower motor, wherein the device is provided with
  • A housing which has electrically insulating insulating material and on one outer side has a partially exposed metal element for thermal cooling and / or for thermal coupling to a heat sink,
  • A transistor having a semiconductor chip arranged in the housing, which is thermally coupled to the metal element,
  • A shunt resistance element disposed in the housing and intended to detect a current through the semiconductor chip, which is thermally coupled to the metal element,
  • - Wherein the semiconductor chip and the shunt resistor element are embedded in the insulating material of the housing, and
  • - Led out of the housing connecting elements, with which the semiconductor chip and the shunt resistor element are electrically connected.

Erfindungsgemäß wird für die Ansteuerung eines elektrischen Verbrauchers ein (Leistungs-)Transistor verwendet, der ein Gehäuse aus einem elektrisch isolierenden Isolationsmaterial aufweist. Das Gehäuse ist an einer seiner Außenseiten mit einem teilweise freiliegenden, insbesondere plattenförmigen Metallelement versehen, das in das Isolationsmaterial teilweise eingebettet ist. Mit diesem Metallelement ist der Halbleiterchip des Transistors thermisch (und auch elektrisch) gekoppelt.According to the invention for the control of a electrical consumer uses a (power) transistor, the one housing comprising an electrically insulating insulating material. The casing is on one of its outer sides with a partially exposed, in particular plate-shaped metal element provided, which is partially embedded in the insulation material. With this metal element, the semiconductor chip of the transistor is thermal (and also electrically) coupled.

Erfindungsgemäß wird nun vorgeschlagen, dieses plattenförmige Metallelement zu vergrößern, um auf ihm elektrisch isoliert aber thermisch gekoppelt ein Shunt-Widerstandselement anzuordnen. Das Shunt-Widerstandselement dient dabei der Erfassung eines durch den Halbleiterchip des Transistors fließenden Stroms. Der Halbleiterchip und das Shunt-Widerstandselement sind also in das Isolationsmaterial des Gehäuses eingebettet, aus dem Anschlusselemente herausgeführt sind, die mit dem Halbleiterchip und dem Shunt-Widerstandselement elektrisch verbunden sind. Auf diese Art und Weise entsteht eine kompakte Leistungsendstufe für die Ansteuerung eines elektrischen Verbrauchers mit thermisch optimaler Anbindung der Stromdetektion, indem das Shunt-Widerstandselement seine Verlustleistung an das vergrößerte Metallelement abgibt. Das Metallelement kann dabei zumindest über eine der Außenseiten des Gehäuses überstehen. Es ist aber auch denkbar, dass das Gehäuse allseitig gegenüber dem plattenförmigen Metallelement zurückspringt. Hierbei ist denkbar, dass nach der Montage des Halbleiterchips und des Shunt-Widerstandselements auf dem Metallelement diese beiden Komponenten von einer insbesondere Kunststoff-Vergussmasse überdeckt werden, wobei aus dieser Vergussmasse dann noch die Anschlusselemente herausragen. Bei dem Shunt-Widerstandselement handelt es sich insbesondere um einen Metallstreifen, wie es von externen Shunt-Widerständen her bekannt ist.According to the invention will now proposed, this plate-shaped Metal element to enlarge electrically isolated on it but thermally coupled a shunt resistor element to arrange. The shunt resistor element is used for detection a current flowing through the semiconductor chip of the transistor. The semiconductor chip and the shunt resistor element are therefore in the insulation material of the housing are embedded, are led out of the connection elements, with the semiconductor chip and the shunt resistor element electrically are connected. In this way, a compact power output stage is created for the Control of an electrical consumer with thermally optimal Connection of current detection by the shunt resistance element dissipates its power loss to the enlarged metal element. The Metal element can thereby at least over one of the outer sides survive the housing. But it is also conceivable that the housing on all sides opposite the disc-shaped Metal element springs back. It is conceivable that after the mounting of the semiconductor chip and of the shunt resistor element on the metal element these two components of one in particular Covered plastic potting compound are, from this potting then still the connection elements protrude. The shunt resistance element is in particular around a metal strip as it comes from external shunt resistors is known.

In weiterer vorteilhafter Ausgestaltung der Erfindung ist es möglich, in dem Gehäuse zur Erfassung der Temperatur des Halbleiterchips einen Temperatursensor vorzusehen, der mit dem Halbleiterchip thermisch gekoppelt ist und mit aus dem Gehäuse herausgeführten Anschlusselementen elektrisch verbunden ist. Auf diese Weise kann eine kompakte Leistungsendstufe geschaffen werden, die eine thermisch optimierte Anbindung sowohl der Strom- als auch der Temperaturdetektion aufweist.In Another advantageous embodiment of the invention, it is possible in the housing for detecting the temperature of the semiconductor chip, a temperature sensor to be provided, which is thermally coupled to the semiconductor chip and with out of the case led out Connection elements is electrically connected. This way you can a compact power output stage will be created, which is a thermal optimized connection of both current and temperature detection having.

Die elektrische Verbindung des Shunt-Widerstandselements mit dem Halbleiterchip des Transistors erfolgt zweckmäßigerweise innerhalb des Transistorgehäuses, so dass insoweit Anschlusselemente aus dem Gehäuse nicht herausgeführt werden müssen.The electrical connection of the shunt resistor element with the semiconductor chip of the transistor is expediently carried out within the transistor housing, so that in this respect connection elements are not led out of the housing have to.

Die Erfindung wird nachfolgend anhand zweier Ausführungsbeispiele und unter Bezugnahme auf die Zeichnung näher erläutert. Im einzelnen zeigen dabei:The Invention will be described below with reference to two embodiments and with reference to the drawing closer explained. In detail, they show:

1 eine Draufsicht auf einen Leistungstransistor mit integrierter Temperatur- und Stromerfassung gemäß einem ersten Ausführungsbeispiel, 1 a top view of a power transistor with integrated temperature and current detection according to a first embodiment,

2 eine Seitenansicht des Leistungstransistors gemäß 1. 2 a side view of the power transistor according to 1 ,

In den 1 und 2 ist ein Leistungstransistor 10 zur linearen Ansteuerung beispielsweise eines Gebläsemotors gemäß einem ersten Ausführungsbeispiel gezeigt. Der Leistungstransistor 10 weist ein Gehäuse 12 aus einem elektrisch isolierenden Isolationsmaterial 14 (beispielsweise einer Kunststoffmasse) auf, das auf ein plattenförmiges Metallelement 16 (beispielsweise aus Kupfer) aufgespritzt ist. In dem Isolationsmaterial 14 sind ein Transistor-Halbleiterchip 18, ein Shunt-Widerstandselement 20 in Form eines Metallstreifens und ein Temperatursensor 22 (z. B. NTC-Element) eingebettet. Aus dem Isolationsmaterial 14 ragen ein Drain-Anschlusselement 24, ein Source-Anschlusselement 26 sowie ein Gate-Anschlusselement 28 heraus, die mit den entsprechenden Gebieten des Halbleiterchip 18 über jeweils einen oder mehrere jeweils parallel liegende Bonddrähte 29 bzw. direkt über das Metallelement 16 verbunden sind. So ist beispielsweise das Drain-Anschlusselement 24 elektrisch mit dem Metallelement 16 verbunden, das wiederum elektrisch mit dem Drain-Gebiet des Halbleiterchips 18 verbunden ist. Auf dem Halbleiterchip 18 befindet sich der Temperatursensor 22, der somit direkt mit dem Halbleiterchip 18 thermisch gekoppelt ist. Über weitere Anschlusselemente 30, 32 lässt sich das Temperatursignal des Temperatursensors 22 nach außen aus dem Gehäuse 12 herausführen. Alternativ kann der Temperatursensor 22 auch in unmittelbarer Nachbarschaft zum Halbleiterchip 18 auf dem Metallelement 16 angeordnet sein.In the 1 and 2 is a power transistor 10 for the linear control of, for example, a fan motor according to a first embodiment shown. The power transistor 10 has a housing 12 from an electrically insulating insulation material 14 (For example, a plastic mass), which on a plate-shaped metal element 16 (for example, copper) is sprayed. In the insulation material 14 are a transistor semiconductor chip 18 , a shunt resistance element 20 in the form of a metal strip and a temperature sensor 22 embedded (eg NTC element). From the insulation material 14 protrude a drain connection element 24 , a source connection element 26 and a gate terminal 28 out with the corresponding areas of the semiconductor chip 18 in each case via one or more parallel bonding wires 29 or directly over the metal element 16 are connected. For example, the drain connection element 24 electrically with the metal element 16 which in turn is electrically connected to the drain region of the semiconductor chip 18 connected is. On the semiconductor chip 18 is the temperature sensor 22 , which thus directly with the semiconductor chip 18 thermally coupled. About other connection elements 30 . 32 can be the temperature signal of the temperature sensor 22 outward from the case 12 lead out. Alternatively, the temperature sensor 22 also in the immediate vicinity of the semiconductor chip 18 on the metal element 16 be arranged.

Eine Besonderheit des Leistungstransistors 10 gemäß den 1 und 2 ist darin zu sehen, dass in der Vergussmasse des Gehäuses 12 auch das Shunt-Widerstandselement 20 eingebettet ist. Die Stromzufuhr bzw. Verbindung des Shunt-Widerstandselements 20 nach außen erfolgt über Anschlusselemente 34 und 36. Ferner können noch (nicht dargestellte) Messanschlusselemente des Shunt-Widerstandselements 20 aus der Vergussmasse herausgeführt werden, wenn die Anschlusselemente 34, 36 ausschließlich der Stromzufuhr dienen sollen. Sämtliche zuvor genannten Anschlusselemente bilden beispielsweise Steckeranschlüsse für die elektrische Kontaktierung des Leistungstransistors 10 und Einbindung desselben in einen Linear-Gebläseregler.A special feature of the power transistor 10 according to the 1 and 2 can be seen in the fact that in the potting compound of the housing 12 also the shunt resistance element 20 is embedded. The power supply or connection of the shunt resistor element 20 to the outside via connection elements 34 and 36 , Furthermore, measuring connection elements (not shown) of the shunt resistor element can also be used 20 be led out of the potting compound when the connection elements 34 . 36 to serve only the power supply. All the aforementioned connection elements form, for example, plug connections for the electrical contacting of the power transistor 10 and integration of the same in a linear blower controller.

Anders als in den 1 und 2 gezeigt, kann die elektrische Verbindung des Shunt-Widerstandselements 20 mit dem Source- oder Drain-Anschlusselement des Leistungstransistors 10 auch innerhalb des Gehäuses 12 erfolgen. Hierbei kann dann eines der beiden Anschlusselemente 34, 36 für das Shunt-Widerstandselement 20 entfallen, indem das Shunt-Widerstandselement direkt elektrisch mit z. B. dem Metallelement 16 verbunden ist. In diesem Fall ist dann das Drain-Gebiet des Halbleiterchips 18 und eines der beiden Enden des Metallstreifens des Shunt-Widerstandselements 20 direkt miteinander verbunden. Diese Schaltungsanordnung eines Leistungstransistors 10' ist in 3 gezeigt, wobei gleiche bzw. sich funktional entsprechende Elemente in den 1 und 2 und in 3 jeweils mit den gleichen Bezugszeichen versehen sind. In 3 ist der Temperatursensor 22 neben dem Transistor-Halbleiterchip 18 angeordnet und zwar thermisch mit dem Metallelement 16 gekoppelt oder elektrisch gegenüber diesem isoliert, wozu in diesem Ausführungsbeispiel ein Keramikplättchen 38 dient. Ferner ist der eine Anschluss 34 des Shunt-Widerstandselements 20 intern mit dem Source-Anschlusselement 26 des Transistor-Halbleiterchip 18 verbunden.Unlike in the 1 and 2 Shown may be the electrical connection of the shunt resistor element 20 to the source or drain terminal of the power transistor 10 also inside the case 12 respectively. In this case, then one of the two connection elements 34 . 36 for the shunt resistance element 20 omitted by the shunt resistor element directly electrically with z. B. the metal element 16 connected is. In this case, the drain region of the semiconductor chip is then 18 and one of the two ends of the metal strip of the shunt resistive element 20 directly connected. This circuit arrangement of a power transistor 10 ' is in 3 shown, wherein the same or functionally corresponding elements in the 1 and 2 and in 3 are each provided with the same reference numerals. In 3 is the temperature sensor 22 next to the transistor semiconductor chip 18 arranged and that thermally with the metal element 16 coupled or electrically isolated from this, including in this embodiment, a ceramic plate 38 serves. Furthermore, this is a connection 34 of the shunt resistor element 20 internally with the source connector 26 of the transistor semiconductor chip 18 connected.

Für beide Ausführungsbeispiele gilt, dass es die thermische Kopplung des Shunt-Widerstandselements 20 mit dem über das Gehäuse 12 überstehenden Metallelement (bei gleichzeitiger elektrischer Isolation gegenüber diesem) ermöglicht, dass das Shunt-Widerstandselement 20 seine elektrische Verlustleistung (in Form von Wärme) direkt an das Metallelement 16 abgibt, welches seinerseits durch einen externen Kühlkörper (in den Figuren nicht gezeigt) gekühlt sein kann. Diese zusätzliche Kühlung ist auch für den Halbleiterchip 18 des Leistungstransistors 10 von Vorteil. Messtechnisch wird die Temperatur des Halbleiterchips 18 durch den Temperatursensor 22 erfasst. Insgesamt ergibt sich damit eine kompakte Struktur für den Leistungstransistor 10, was sich bautechnisch und von Seiten der Herstellungskosten aus günstig gestaltet.For both embodiments, it is the thermal coupling of the shunt resistor element 20 with the over the case 12 protruding metal element (with simultaneous electrical isolation from this) allows the shunt resistor element 20 its electrical power dissipation (in the form of heat) directly to the metal element 16 which in turn can be cooled by an external heat sink (not shown in the figures). This additional cooling is also for the semiconductor chip 18 of the power transistor 10 advantageous. Metrologically, the temperature of the semiconductor chip 18 through the temperature sensor 22 detected. Overall, this results in a compact structure for the power transistor 10 , which structurally and from the side of the manufacturing costs made favorable.

1010
Leistungstransistorpower transistor
1212
Gehäusecasing
1414
Isolationsmaterialinsulation material
1616
Metallelementmetal element
1818
Transistor-HalbleiterchipTransistor semiconductor chip
2020
Shunt-WiderstandselementShunt resistor element
2222
Temperatursensortemperature sensor
2424
Drain-Anschlusselement des LeistungstransistorsDrain element of the power transistor
2626
Source-Anschlusselement des LeistungstransistorsSource terminal element of the power transistor
2828
Gate-Anschlusselement des LeistungstransistorsGate terminal element of the power transistor
2929
BonddrähteBond wires
3030
Anschlusselemente des Gehäusesconnection elements of the housing
3232
Anschlusselemente des Gehäusesconnection elements of the housing
3434
Anschlusselemente des Gehäusesconnection elements of the housing
3636
Anschlusselemente des Gehäusesconnection elements of the housing
3838
Keramikplättchenceramic plates

Claims (3)

Vorrichtung zur Ansteuerung eines elektrischen Verbrauchers, insbesondere eines Kfz-Gebläsemotors, mit – einem Gehäuse (12), das elektrisch isolierendes Isolationsmaterial (14) aufweist und an einer Außenseite ein teilweise freiliegendes Metallelement (16) zur thermischen Kühlung und/oder zur thermischen Kopplung mit einem Kühlkörper aufweist, – einem Transistor (10), der einen in dem Gehäuse (12) angeordneten Halbleiterchip (18) aufweist, welcher mit dem Metallelement (16) thermisch gekoppelt ist, – einem in dem Gehäuse (12) angeordneten und zur Erfassung eines Stroms durch den Halbleiterchip (18) vorgesehenen Shunt-Widerstandselement (20), das mit dem Metallelement (16) thermisch gekoppelt ist, – wobei der Halbleiterchip (18) und das Shunt-Widerstandselement (20) in das Isolationsmaterial (14) des Gehäuses (12) eingebettet sind, und – aus dem Gehäuse (12) herausgeführten Anschlusselementen (24, 26, 28, 34, 36), mit denen der Halbleiterchip (18) und das Shunt-Widerstandselement (20) elektrisch verbunden sind.Device for controlling an electrical load, in particular a motor vehicle blower motor, having - a housing ( 12 ), the electrically insulating insulating material ( 14 ) and on a outside a partially exposed metal element ( 16 ) for thermal cooling and / or for thermal coupling to a heat sink, - a transistor ( 10 ), one in the housing ( 12 ) arranged semiconductor chip ( 18 ), which with the metal element ( 16 ) is thermally coupled, - one in the housing ( 12 ) and for detecting a current through the semiconductor chip ( 18 ) provided shunt resistor element ( 20 ) connected to the metal element ( 16 ) is thermally coupled, - wherein the semiconductor chip ( 18 ) and the shunt resistance element ( 20 ) in the insulation material ( 14 ) of the housing ( 12 ) are embedded, and - from the housing ( 12 ) led out connecting elements ( 24 . 26 . 28 . 34 . 36 ), with which the semiconductor chip ( 18 ) and the shunt resistance element ( 20 ) are electrically connected. Vorrichtung nach Anspruch 1, gekennzeichnet durch einen in dem Gehäuse (12) angeordneten und zur Erfassung der Temperatur des Halbleiterchips (18) vorgesehenen Temperatursensor (22), der mit dem Halbleiterchip (18) thermisch gekoppelt und mit aus dem Gehäuse (12) herausgeführten Anschlusselementen (30, 32) elektrisch verbunden ist.Apparatus according to claim 1, characterized by a in the housing ( 12 ) and for detecting the temperature of the semiconductor chip ( 18 ) provided temperature sensor ( 22 ) connected to the semiconductor chip ( 18 ) thermally coupled with and out of the housing ( 12 ) led out connecting elements ( 30 . 32 ) is electrically connected. Vorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Shunt-Widerstandselement (20) innerhalb des Gehäuses (12) elektrisch mit dem Halbleiterchip (18) verschaltet ist.Device according to claim 1 or 2, characterized in that the shunt resistance element ( 20 ) within the housing ( 12 ) electrically connected to the semiconductor chip ( 18 ) is interconnected.
DE102007056581A 2007-11-23 2007-11-23 Electrical load i.e. motor vehicle blower motor, controlling device, has connection elements brought out from housing, and chip and resistance element, which are electrically connected by connection elements Withdrawn DE102007056581A1 (en)

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