DE102007016904A1 - Optoelectronic device e.g. vertical cavity surface emitting laser, has optoelectronic component with contact conductor, and solder film connection formed between connection surface and contact conductor in sectional manner - Google Patents

Abstract

The device (1) has an optoelectronic component (2) arranged with a contact conductor (20) on a connection carrier (3) with a connection surface (30). A solder film connection (50) is formed between the connection surface and the contact conductor in a sectional manner. An optical element (4) is arranged on the component for beam guidance and/or beam formation of a beam produced during operation of the component. The element contains plastic, and the solder film connection is formed by a solder multi-layer structure. An independent claim is also included for a method for manufacturing an optoelectronic device.

Description

The The invention relates to an optoelectronic device and a Method for producing an optoelectronic device.

at the production of conventional Optoelectronic devices become optoelectronic devices often in a so-called reflow soldering on printed circuit boards soldered. A solder connection between the connections the optoelectronic components and the conductor tracks of the printed circuit board is hereby made by the conductor mesh together with the optoelectronic components and the solder in an oven is heated to a temperature above the melting point of the solder lies. In heat-sensitive optoelectronic devices can this heating would lead to thermally induced damage.

It It is an object of the invention to provide an optoelectronic device specify that can be reliably produced in a simple manner. Farther is a method for producing an optoelectronic device be specified.

These Tasks are solved by the subject matters of the independent claims. advantageous Embodiments and developments of the invention are the subject the dependent Claims.

According to one embodiment an optoelectronic device has an optoelectronic component with a contact conductor on. The optoelectronic component is on a connection carrier with a connection surface arranged. Between the pad and the contact conductor is at least in some areas a Lötfilmverbindung educated.

A such solder film connection may generally be characterized by the fact that these are in the lateral direction, this means in one along a main surface of the connection carrier extending direction, free or substantially free of flow areas of the material for the solder film connection can be. Such flow areas arise in a conventional solder joint in that the solder material in the manufacture of the solder joint for a comparatively long time Time in a flowable state is. So can the liquid Solders Sources swell laterally next to the contact conductor. In the preparation of the solder film connection is the material for the solder film connection for such short time in a flowable state that flow areas of the soldering material not or at least compared to the reflow process only in significantly less Training extent can.

The Optoelectronic device can continue to be distinguished by that the contact conductor on the side facing away from the pad free of material for the solder film connection is.

Also a lateral side surface of the contact conductor delimiting in the lateral direction Contact conductor may be free or substantially free of material for the Lötfilmverbindung be.

In a preferred embodiment dominates a Extension of the soldering film connection in the lateral direction, the contact conductor and / or the pad not or not essential. In other words, the extent of the Lötfilmverbindung Completely or at least substantially to the area between the contact conductor and the pad be limited.

In Another preferred embodiment, the pad and the contact conductor by means of the solder film connection connected electrically and / or thermally conductive. Here, the Contact manager for one electrical connection and / or for a thermal connection be provided of the optoelectronic component. Under a Thermal connection is understood in particular as a connection via which optionally in addition for electrical supply generated during operation of the device Heat off the optoelectronic component can be discharged. For an efficient Heat dissipation points a thermal contact conductor preferably has a larger cross-section on as a contact conductor, which is intended exclusively for electrical contact is.

The Optoelectronic device may also have more than one contact conductor have about two contact conductors, which are responsible for applying an external electrical Voltage are provided on the optoelectronic component. In addition to the electrical contact conductors, the optoelectronic device have a thermal contact conductor. In this case, in the Operation of the optoelectronic device generated in addition to heat the electrical connections predominantly over the drain thermal contact conductor. Next, the thermal Contact conductor electrically insulated from the electrical contact conductors be.

Of the connection carrier For example, a printed circuit board (PCB) can be used. be. In particular, the connection carrier can be made flexible or rigid.

The optoelectronic component can be provided for generating incoherent radiation and, for example, designed as an LED (light emitting diode). Alternatively or additionally, the optoelectronic component can be provided for generating coherent or partially coherent radiation and, for example, as a semiconductor laser, such as kan or internal cavity surface emitting laser (VCSEL) or external external cavity surface emitting laser (VECSEL) or resonant cavity light emitting diode (RCLED).

In Another preferred embodiment is on the optoelectronic Component an optical element for beam guidance and / or beam shaping a radiation generated during operation of the optoelectronic component arranged. The optical element is preferably as a prefabricated Element executed, that in particular of an envelope a semiconductor chip of the optoelectronic component different is. For example, the optical element may be a lens or a be lenticular element. Preferably, the optical element includes a Plastic. Such an optical element is simple and inexpensive to produce.

Farther the optical element can be mechanically stable at the optoelectronic Component, for example on a housing body of the optoelectronic Component, be attached. The attachment can, for example by attaching, Aufrastens or another mechanical connection form respectively. Alternatively or additionally the optical element be attached by gluing.

In According to a preferred embodiment, the soldering film connection contains Al, Ni, Ti, Nb, Cu, Pd, Fe, Au, In, Sn and / or Si. Preferably, the solder film compound contains two different of these materials or consists of two different ones of these materials. For example, the soldering film compound may be one of the following Contain or consist of material combinations: Al / Ni, Al / Ti, Ni / Si, Nb / Si, Ni / Pd, Al / Cu or Al / Fe. The soldering film connection can therefore be two containing various metals or a metal and a semiconductor or consist of.

In Another preferred embodiment is the solder film connection formed by means of a solder multilayer structure.

at a method for producing an optoelectronic device, in which an optoelectronic component with a contact conductor on a connection carrier with a connection surface is arranged according to a embodiment a connection carrier provided. The optoelectronic component is positioned on the connection carrier. A solder film connection the connection surface with the contact conductor by means of a solder multilayer structure, arranged at least partially between the contact conductor and the pad is manufactured. The trained by means of the solder multilayer structure Lötfilmverbindung is preferably mechanically stable and is further preferred an electrically and / or thermally conductive connection of the contact conductor with the connection surface.

In an embodiment variant the solder multilayer structure is prefabricated and is prior to manufacturing the solder film connection on the connection carrier or arranged on the contact conductor.

The Lot multi-layer structure, for example, as a film in the sense be executed a self-supporting layer composite.

The prefabricated solder multilayer structure may, prior to manufacturing the Lötfilmverbindung by means of an adhesive on the pad or on the contact conductor be attached. Due to the adhesive, the adhesion of the Lot multilayer structure on the connection surface or be increased at the contact conductor.

In a further embodiment become layers of the solder multilayer structure before manufacturing the solder film connection formed on the contact conductor or on the pad. These layers can for example by means of a PVD process, such as vapor deposition or Sputtering, or a CVD method, such as PECVD (plasma enhanced chemical vapor deposition) are applied. Alternatively or additional It is also possible to use a printing process, such as screen printing.

In In a preferred embodiment, the solder multilayer structure has a thickness between including 0.5 μm and including 1.5 cm, more preferably between 10 μm and 1000 μm inclusive.

In a further preferred embodiment, the solder multilayer structure 2 layers or more, preferably 10 layers or more, more preferably 50 layers or more, up. The multi-layer structure can go on a considerably larger number of layers, about 500 layers or more, especially 2000 layers or more. The individual layer thicknesses are preferably less than 1 μm, more preferably less than 100 nm, for example 10 nm.

In a further preferred embodiment, at least one layer of the solder multilayer structure contains a metal. Furthermore, at least one layer of the solder multilayer structure preferably contains Al, Ni, Ti, Nb, Cu, Pd, Fe, Au, In, Sn and / or Si. Two layers of the solder multilayer structure preferably contain two different materials or consist of two different materials. The different materials are furthermore preferably selected from the abovementioned materials. For example, one layer of the solder multilayer structure may contain one metal and the other layer of the solder multilayer structure may contain another metal or a semiconductor.

In Another preferred embodiment is one or a plurality of single layers of the solder multilayer structure as a layer higher Purity formed. The purity of the single layer is preferred 95% or greater, especially preferably 98% or greater, on most preferably 99% or greater. With Single layers - z. B. metal layers and / or semiconductor layers - high purity can be a mechanically particularly stable soldered film connection getting produced.

In a further preferred embodiment, the solder multilayer structure is formed as a plurality of layer pairs arranged on one another. For example, pairs of layers that are based on one of the material combinations Al / CuO _x, Al / FeO _x, Ni / Pd, Al / Ni, Al / Ti, Ni / Si or Nb / Si, or consist of such a material combination suitable. In this case, the one layer of a layer pair may contain the respectively first-mentioned material and the other layer of the layer pair may contain the respectively second-mentioned material.

The Layers of the solder multilayer structure can be used in the manufacture of the Solder film connection complete or be at least partially mixed. A cross section through a finished solder film connection indicates in case of total Mixing so not necessarily immediately recognizable Single layers on.

Farther can in the preparation of the solder film connection in the solder multilayer structure a self-propagating exotherm Reaction can be induced. This exothermic reaction can be thorough mixing effect the solder multilayer structure.

By the exothermic reaction may short the material of the solder multilayer structure Time over the each melting point of the layers are heated. Already one Time of less than a second, between about 1 ms up to and including 500 ms may be sufficient. After triggering the exothermic reaction is an external supply of energy, such as in the form of heat or electromagnetic Radiation, for heating over the Melting point not required. In particular, not all optoelectronic Component for forming the solder film connection to be heated. Rather, the heating of the solder multilayer structure takes place by means of the exothermic reaction in a localized area. From the solder film connection spaced apart areas of the optoelectronic component become in the manufacture of the solder film connection so not or only slightly heated. The method is therefore also suitable for the case that the optoelectronic component or a part attached thereto, such as a plastic-containing optical element, by the action of heat damaged can be.

In A preferred embodiment is prior to producing the solder film connection at least on one side of the solder multilayer structure, a bonding layer educated. The bonding layer can be by means of the self-propagating exothermic reaction are at least partially melted. For example, the tie layer may be used as a coating be executed of the contact conductor. The bonding layer may be, for example, a solder, such as In, Sn or AuSn included. By such a compound layer, the production the solder film connection be simplified. Depending on Material of the contact conductor and the pad can be applied to the connection layer but also be waived.

In A preferred embodiment is in the manufacture of the solder film connection a mechanical pressure exerted on the solder multilayer structure. Thereby the exothermic reaction can be induced.

alternative or in addition may be used to make the solder film connection an electrical voltage can be applied to the solder multilayer structure. In this case, the exothermic reaction by the electric Voltage induced. Already a short voltage pulse can sufficient for this be.

Also other types of energy supply can be used for inducing find the exothermic reaction application, for example, energy by means of welding electrodes or electromagnetic radiation, for example microwave radiation or laser radiation.

In In a preferred embodiment, the electrical voltage between the pad and another connection surface of the connection carrier created, with the further connection surface with another contact conductor the optoelectronic component electrically conductively connected is. So can an electric current in the optoelectronic device imprinted become.

The electrical voltage is preferably adapted to a Beriebsspannung of the optoelectronic device. In particular, the electric potential is preferably between 0.1 times and 5 times inclusive, more preferably between 0.5 times and 5 times inclusive twice the operating voltage of the optoelectronic component.

In In a further preferred embodiment, the optoelectronic Component tested by means of the applied electrical voltage. That way you can making the solder film connection and testing the optoelectronic device in a common Production step performed become. On an additional Test step after making the solder film connection can be omitted become.

In Another preferred embodiment is at the optoelectronic Component prior to making the solder film connection a prefabricated optical Element for beam guidance and / or beam forming attached. The connection carrier can So be equipped with an optoelectronic device, where the optical element is already attached. Unlike the case Reflow process is the optoelectronic device in the manufacture the solder film connection between the contact conductor and the pad mainly only in a directly adjacent to the solder multilayer structure area heated. The risk of heat-induced damage to the optoelectronic Component, and in particular the optical element attached thereto, in the manufacture of the solder film connection is characterized, in particular in comparison to the reflow soldering, reduced.

One subsequent Attach, so attaching the optical element after the Making the solder film connection, can therefore be avoided. In particular, the production of an optoelectronic Device comprising a plurality of optoelectronic components This simplifies it.

The described method is for producing a described optoelectronic Device particularly suitable, so that in connection with the Device described features also applicable to the method are and vice versa.

Further Features, advantageous embodiments and expediencies The invention will become apparent from the following description of the embodiments in conjunction with the figures.

It demonstrate:

1 An embodiment of an optoelectronic device in a schematic sectional view,

2A to 2C a first embodiment of a method for producing an optoelectronic device based on intermediate steps schematically shown in sectional view, and

3A to 3C A second embodiment of a method for producing an optoelectronic device based on intermediate steps schematically shown in sectional view.

Same, similar and equally acting elements are in the figures with provided the same reference numerals.

The Figures are schematic representations and therefore not absolutely true to scale. Rather, you can comparatively small elements and in particular layer thicknesses for Exaggeration exaggerated shown big be.

An exemplary embodiment of an optoelectronic device 1 is in 1 shown in a schematic sectional view.

The optoelectronic device 1 has an optoelectronic component 2 with a first contact conductor 20 on. The optoelectronic component 2 is designed as a surface mounted device (SMD). The optoelectronic component is on a connection carrier 3 with a connection surface 30 arranged. Between the contact conductor 20 and the pad 30 a solder film connection is formed. The solder film connection 50 is substantially free of flow areas of the material for the solder film connection. A description of the preparation of the soldering film connection is made in connection with FIGS 2A to 2C ,

The optoelectronic component 2 also has a housing body 25 on. The first contact manager 20 protrudes on the connection carrier 3 facing side of the housing body out of the housing body.

The optoelectronic component 2 further comprises a semiconductor chip 26 , The semiconductor chip is in a recess 250 of the housing body 25 arranged. The semiconductor chip may have an active region which is suitable for generating electromagnetic radiation, preferably in the infrared, visible or ultraviolet spectral range. The semiconductor chip 26 is in a cladding 27 embedded. The sheath is expediently transparent or at least translucent for radiation generated in the semiconductor chip and may contain, for example, a resin or a silicone. By means of this enclosure, the semiconductor chip can be protected from external environmental influences.

Furthermore, the optoelectronic construction a second contact conductor 21 and a third contact conductor 22 on. The second and third contact conductor 21 respectively 22 protrude from two different side surfaces of the housing body 25 laterally out of the housing body. These contact conductors 21 and 22 serve the electrical contacting of the semiconductor chip 1 , The third contact conductor is over a bonding wire 28 electrically connected to the semiconductor chip. The first contact manager 20 and the second contact conductor 21 are electrically connected. By applying an external electrical voltage between the second contact conductor 21 and the third contact conductor 22 In the operation of the optical device, a current can flow into the semiconductor chip 25 be imprinted so that the injected charge carriers in the active region can recombine under the emission of radiation.

Between the second contact conductor 21 and the second pad 31 as well as between the third contact conductor 22 and the third pad 32 each is a solder film connection 50 educated. One of the second connection area 31 opposite surface 211 of the second contact conductor 21 and one of the third pad 32 opposite surface 221 of the third contact manager 22 is free of material for the soldering film connection 50 , Furthermore, a lateral surface delimiting the second contact conductor in the lateral direction 210 and a side surface bounding the third contact conductor in the lateral direction 220 each free of material for the solder film connection.

The connection carrier 3 may be, for example, a printed circuit board (PCB). Both a flexible and a rigid printed circuit board can be used. The carrier material is, for example, FR2 or FR4. Also, a terminal carrier having a core containing a metal core printed circuit board (MCPCB), a ceramic or polytetrafluoroethylene (PTFE) is suitable. Such a connection carrier can be characterized by efficient heat dissipation from the optoelectronic component mounted thereon. A flexible connection carrier can for example be based on a plastic film, for example a polyimide film. A titanium flex carrier is also suitable as a connection carrier.

The semiconductor chip 26 is on the first contact conductor 20 arranged and attached to this. The first contact manager 20 is mainly used to dissipate during operation of the semiconductor chip 26 generated heat. The first contact manager 20 and the second contact conductor 21 do not necessarily have to be electrically connected to each other. Deviating from these contact conductors can also be electrically isolated from each other. In this case, the second contact conductor 21 For example, be electrically conductively connected via a bonding wire to the semiconductor chip. The first contact conductor can then serve exclusively for the thermal contacting of the semiconductor chip.

Furthermore, at least one soldering film connection 50 executed so mechanically stable that the optoelectronic device 2 permanently connected to the connection carrier by means of the soldering film connection 3 is attached.

On the connection carrier 3 remote side of the optoelectronic device 2 is an optical element 4 arranged. The optical element 4 is by means of an intermediate layer 24 on the housing body 25 attached to the optoelectronic component. The intermediate layer is expediently transparent or at least translucent for radiation generated in the optoelectronic component and may contain, for example, a silicone. Alternatively or additionally, the optoelectronic element 4 for attachment, for example, plugged onto the housing body of the optoelectronic device, snapped or snapped.

The optical element 4 serves the beam shaping and / or beam guidance during operation of the optoelectronic component 2 generated radiation. The optical element has an optical axis 40 on, passing through the optoelectronic device 2 , in particular by the semiconductor chip 26 , runs. In the area near the optical axis 40 is the optoelectronic device 2 opposite side of the optical element 4 concave curved. At a greater distance from the optical axis, the concave curvature changes into a convex curvature. In this way, in the optoelectronic component 2 generated radiation can be efficiently refracted into large angles to the optical axis. Such an optical element is particularly suitable, in particular in conjunction with the optoelectronic component embodied as an LED, for the backlighting of a display device, for example an LCD (liquid crystal display).

Alternatively, the optical element 4 for example, be provided for beam focusing or beam collimation and at least partially have the basic shape of a convex or plano-convex lens.

The optical element 4 preferably contains a plastic, such as PMMI, PMMA, PC or silicone, or consists of such a material. Such an optical element is inexpensive to produce.

The optoelectronic device 1 merely exemplifies only an optoelectronic device 2 on. Deviating from that, a multitude of optoelectronic components side by side on the connection carrier 3 be arranged.

A first embodiment of a method for producing an optoelectronic device is shown in FIGS 2A to 2C shown by intermediate steps shown schematically in sectional view. In this embodiment, the production of an optoelectronic device is described as an example, as in connection with 1 is described described.

In 2A is a connection carrier 3 shown on which a first pad 30 , a second pad 31 and a third pad 32 is trained. At least in regions, in each case, a solder multilayer structure is formed on these connection surfaces 5 arranged.

The solder multilayer structure 5 includes a plurality of first layers 51 and second layers 52 , In each case, a first layer and a second layer form a layer pair, wherein the layer pairs are arranged on top of each other. The solder multilayer structure preferably comprises 10 layers or more, more preferably 50 layers or more. The solder multilayer structure may also have significantly more layers, about 500 layers or more, especially 2000 layers or more. Deviating from this, already 2 layers or more may be sufficient.

The Single layer thicknesses are preferably less than 1 μm, especially preferably less than 100 nm, for example 10 nm.

Furthermore, at least one layer preferably contains the solder multilayer structure 5 a metal such as Al, Ni, Nb, Cu, Pd, Au, In, and / or Sri, and / or a semiconductor such as Si.

For example, pairs of layers that are based on one of the material combinations Al / CuO _x, Al / FeO _x, Ni / Pd, Al / Ni, Al / Ti, Ni / Si or Nb / Si, or consist of such a material combination suitable. The material combinations Al / Ni, Al / Ti, Ni / Si or Nb / Si have proven particularly advantageous. Furthermore, the solder multilayer structure preferably consists of a plurality of identical layer pairs.

For the respective Layer pair of the solder multilayer structure has a mixing ratio of 1: 1 proved to be advantageous. A pair of layers can therefore of the materials the material combination used each contain the same amount.

The Purity of the layers of the respective layer pair is preferred 95% or greater, especially preferably 98% or greater, on most preferably 99% or greater. For an Al / Ni Material combination has, for example, a pair of layers with one too 98.5% pure Al layer and a 99.6% pure Ni layer as proved particularly advantageous.

The total thickness of the solder multilayer structure 5 is preferably between 0.5 μm inclusive and 1.5 cm inclusive, more preferably between 10 μm and 1000 μm inclusive.

The solder multilayer structure 5 Can be used as a prefabricated structure on the connection carrier 3 to be ordered. For example, the solder multilayer structure may be formed as a self-supporting foil.

Furthermore, the solder multilayer structure by means of an adhesive at the respective Anschussflächen 30 . 31 . 32 of the connection carrier 3 be attached. The adhesive is in the 2A not explicitly shown. By the adhesive, the attachment of the solder multilayer structure can be simplified at the Anschussflächen. On such an adhesive can also be dispensed with.

When Adhesive is particularly suitable as a means of controlling the process the exothermic reaction is not affected. Furthermore, that can Adhesive metallic or approximate have metallic character. For example, the adhesive contain a lot. Alternatively or additionally, the adhesive may aluminum nitride or contain an adhesive.

Alternatively, layers of the solder multilayer structure 5 on the connection surfaces 30 . 31 . 32 be applied. For example, a PVD method, such as vapor deposition or sputtering or a CVD method, such as PECVD (plasma enhanced chemical vapor deposition) is suitable. Alternatively or additionally, a printing method, such as screen printing, can also be used.

The following will, as in 2 B shown, an optoelectronic device 2 on the connection carrier 3 positioned. In a plan view of the connection carrier in each case overlap the first contact conductor 20 , the second contact conductor 21 and the third contact conductor 22 with the respectively associated first, second and third connection area 30 . 31 respectively 32 ,

Between the respective contact conductor and the associated pad is in each case a solder multilayer structure 5 arranged.

Deviating from the previous description, the solder multilayer structure 5 be attached to the respective contact conductor or abge example, by means of one of the methods described above on the respective contact conductor to be divorced. Attaching or depositing the solder multilayer structure on the associated connection surface can be dispensed with in this case.

When positioning the optoelectronic component 2 is already an optical element at this 4 attached. The optoelectronic component is therefore already in the assembly of the connection carrier with the optoelectronic component 2 provided with the optical element.

After positioning, a solder film connection of the first pad is made 30 with the first contact conductor 20 , the second connection surface 31 with the second contact conductor 21 , as well as the third connection area 32 with the third contact conductor 32 produced. This is in 2C shown. In this case, the layers of the respective solder multilayer structure 5 completely or at least partially mixed.

To form the solder film connection 50 For example, a self-propagating exothermic reaction can be induced in the solder multilayer structure.

These Reaction, for example, by applying an electrical voltage triggered at the solder multilayer structure. Already a short one Voltage pulse can for the triggering of be sufficient exothermic reaction.

For making the solder film connection between the first contact conductor 20 and the first pad 30 For example, the electrical voltage between the first firing surface 30 and the third pad 32 be created. In this case, an electric current through the semiconductor chip 26 of the optoelectronic component flow. With regard to the polarity and / or the amplitude, the electrical voltage is preferably connected to an operating voltage of the optoelectronic component 2 customized. The risk of damage to the optoelectronic component 2 can be avoided or at least reduced. Preferably, the electrical voltage is between 0.1 times and 5 times, and more preferably between 0.5 times and 2 times, the operating voltage of the optoelectronic component 2 , In this way, the optoelectronic component 2 already in the production of the solder film connection 50 be tested for its functionality. A subsequent, additional test step can be dispensed with in the production of the optoelectronic device.

Alternatively or in addition to the application of the electrical voltage, a mechanical pressure on the solder multilayer structure can be used to produce the soldered-film connection 5 be exercised. For example, the optoelectronic component 2 by means of a stamp on the connection carrier 3 be pressed.

A second exemplary embodiment of a method for producing an optoelectronic device is disclosed in US Pat 3A to 3C shown by intermediate steps shown schematically in sectional view. The second embodiment substantially corresponds to the first embodiment.

In contrast to the first embodiment, only the first pad 30 and the first contact conductor 20 by means of a soldering film connection 50 connected with each other. The second contact conductor 21 and the second pad 31 as well as the third contact conductor 22 and the third pad 32 are each using a solder joint 6 connected with each other. The solder connection 6 can be prepared by means of a solder, which may contain, for example, In, Au or Sn. For the preparation of the solder joint 6 For example, the solder can be briefly heated above the melting point of the solder by means of a laser. For example, the contact conductors 21 and 22 in each case from the connection carrier 3 are turned away locally by means of the radiation of the laser locally. A temperature increase of the entire optoelectronic component can be avoided.

Compared with the second and third contact conductors 21 respectively 22 is the first contact manager 20 not or hardly accessible for laser radiation. For producing an electrically and / or thermally conductive connection of this hard to reach first contact conductor 20 with the associated first connection surface 30 a solder film connection is particularly suitable.

Furthermore, in contrast to the first embodiment, between the solder multilayer structure 5 and the pad 30 a tie layer 7 arranged. The connecting layer can be formed for example by means of a solder. The solder may contain, for example, Au, In or Sn.

The tie layer may be used in the manufacture of the solder film connection 50 be melted at least partially by means of the exothermic reaction. The bonding layer may form a permanent solder film bond 50 be simplified. Alternatively or additionally, the bonding layer may also be between the solder multilayer structure 5 and the contact manager 20 be arranged. For example, the connection layer may be designed as a coating of the contact conductor.

On the tie layer 7 can also be omitted as described in the first embodiment.

The by means of a solder multilayer structure of the type described above formed solder film connections can opposite usual solder joints, z. B. AuSn solder joints, through an increased Distinguish mechanical strength. This may therefore be due to that the solder film connection across from usual solder joints may have a finer microstructure.

The The invention is not by the description based on the embodiments limited. Much more For example, the invention includes every novel feature as well as every combination of features, in particular any combination of features in the claims includes, even if this feature or this combination itself not explicitly in the claims or the embodiments is specified.

Claims (38)

Optoelectronic device ( 1 ), in which an optoelectronic component ( 2 ) with a contact conductor ( 20 . 21 . 22 ) on a connection carrier ( 3 ) with a connection surface ( 30 . 31 . 32 ) is arranged, wherein between the connection surface ( 30 . 31 . 32 ) and the contact manager ( 20 . 21 . 22 ) at least partially a Lötfilmverbindung ( 50 ) is formed. Optoelectronic device according to Claim 1, in which the contact conductor ( 20 . 21 . 22 ) on the pad ( 30 . 31 . 32 ) facing away from material for the solder film connection ( 50 ). Optoelectronic device according to Claim 1 or 2, in which a contact conductor ( 21 . 22 ) laterally delimiting side surface ( 210 . 220 ) free or substantially free of material for the solder film connection ( 50 ). Optoelectronic device according to one of the preceding claims, in which the solder-film connection ( 50 ) is free or substantially free of flow areas of the material for the solder film connection in the lateral direction. Optoelectronic device according to one of the preceding claims, in which an expansion of the soldered-film connection ( 50 ) in the lateral direction the contact conductor ( 20 . 21 . 22 ) and / or the pad ( 30 . 31 . 32 ) not or not significantly exceeded. Optoelectronic device according to one of the preceding claims, in which the solder-film connection ( 50 ) contains at least one of: Al, Ni, Ti, Nb, Cu, Pd, Fe, Au, In, Sn, Si. Optoelectronic device according to one of the preceding claims, in which the solder-film connection ( 50 ) contains one of the following combinations of materials: Al / Ni, Al / Ti, Ni / Si, Nb / Si, Ni / Pd, Al / Cu or Al / Fe. Optoelectronic device according to one of the preceding claims, in which the connection surface ( 30 . 31 . 32 ) and the contact manager ( 20 . 21 . 22 ) by means of the solder film connection ( 50 ) are electrically and / or thermally conductively connected. Optoelectronic device according to one of the preceding claims, in which the solder-film connection ( 50 ) by means of a solder multilayer structure ( 5 ) is trained. Optoelectronic device according to one of the preceding claims, in which on the optoelectronic component ( 2 ) an optical element ( 4 ) for beam guidance and / or beam shaping during operation of the optoelectronic component ( 2 ) Radiation is arranged. Optoelectronic device according to Claim 10, in which the optical element ( 4 ) contains a plastic. Optoelectronic device according to one of claims 1 to 11, wherein the optoelectronic device ( 1 ) is designed as an LED or as a semiconductor laser. Method for producing a device in which an optoelectronic component ( 2 ) with a contact conductor ( 20 . 21 . 22 ) on a connection carrier ( 3 ) is arranged with a connection surface, with the steps: a) providing the connection carrier ( 3 ), b) positioning the optoelectronic component ( 2 ) on the connection carrier ( 3 ), and c) producing a soldered-film connection ( 50 ) of the pad ( 30 . 31 . 32 ) with the contact conductor ( 20 . 21 . 22 ) by means of a solder multilayer structure ( 5 ), which at least partially between the contact conductor ( 20 . 21 . 22 ) and the pad ( 30 . 31 . 32 ) is arranged. The method of claim 13, wherein the solder multilayer structure ( 50 ) and before step c) on the connection carrier ( 3 ) or on the contact conductor ( 20 . 21 . 22 ) is arranged. Method according to Claim 13 or 14, in which the solder multilayer structure ( 5 ) before step c) by means of an adhesive on the connection surface ( 30 . 31 . 32 ) or at the contact conductor ( 20 . 21 . 22 ) is attached. The method of claim 13, wherein layers of the solder multilayer structure ( 5 ) before step c) on the contact conductor ( 20 . 21 . 22 ) or on the interface ( 30 . 31 . 32 ) be formed. The method of claim 16, wherein layers of the solder multilayer structure ( 5 ) are applied by means of a PVD method or a CVD method. Method according to claim 16 or 17, in which layers of the solder multilayer structure ( 5 ) are applied by means of printing, in particular by screen printing. Method according to one of Claims 13 to 18, in which the layers of the solder multilayer structure ( 5 ) in step c) completely or at least partially mixed. Method according to one of claims 13 to 19, wherein in step c) in the solder multilayer structure ( 5 ) a self-propagating exothermic reaction is induced. Method according to Claim 20, in which at least on one side of the solder multilayer structure ( 5 ) a connection layer ( 7 ) is formed and the bonding layer is melted at least partially by means of the self-propagating exothermic reaction. The method according to claim 21, wherein the connection layer ( 7 ) contains a lot. Method according to one of Claims 13 to 22, in which the optoelectronic component ( 2 ) another contact conductor ( 21 . 22 ) and the further contact conductor ( 21 . 22 ) at another connection surface ( 31 . 32 ) of the connection carrier ( 3 ) is attached. Method according to one of Claims 13 to 23, in which, in step c), an electrical voltage is applied to the solder multilayer structure ( 5 ) is created. Method according to Claims 23 and 24, in which the electrical voltage between the pad ( 30 ) and the further connection surface ( 32 ) is applied and so an electric current into the optoelectronic device ( 2 ) is impressed. Method according to Claim 24 or 25, in which the electrical voltage is connected to an operating voltage of the optoelectronic component ( 2 ) is adjusted. Method according to one of Claims 24 to 26, in which the electrical voltage is between 0.1 and 5 times inclusive, preferably between 0.5 times and 2 times, the operating voltage of the optoelectronic component ( 2 ) lies. Method according to one of claims 24 to 27, wherein the optoelectronic device tested by means of electrical voltage becomes. Method according to one of claims 13 to 28, wherein in step c) a mechanical pressure on the solder multilayer structure ( 5 ) is exercised. Method according to one of claims 13 to 29, wherein before step c) on the optoelectronic component ( 2 ) a prefabricated optical element ( 4 ) for beam guidance and / or beam shaping during operation of the optoelectronic component ( 2 ) radiation is attached. A method according to any one of claims 13 to 30, wherein in step c) a mechanically stable, electrically and / or thermally conductive Connection is made. Method according to one of Claims 13 to 31, in which the solder multilayer structure ( 5 ) has a thickness of between 10 μm and 1000 μm inclusive. Method according to one of Claims 13 to 32, in which the solder multilayer structure ( 5 ) Has 50 layers or more, preferably 500 layers or more. Method according to one of Claims 13 to 33, in which at least one layer ( 51 . 52 ) of the solder multilayer structure contains a metal. Method according to one of claims 13 to 34, wherein at least one layer ( 51 . 52 ) of the solder multilayer structure includes at least one of: Al, Ni, Ti, Nb, Cu, Pd, Fe, Au, In, Sn, Si. Method according to one of claims 13 to 35, wherein the solder multilayer structure as a plurality of stacked layer pairs ( 51 . 52 ) is trained. The method of claim 36, wherein the pairs of layers based on one of the material combinations Al / CuO _x , Al / FeO _x , Ni / Pd, Al / Ni, Al / Ti, Ni / Si or Nb / Si, wherein the one layer of the layer pair contains the respective first-named material and the other layer of the layer pair contains the respectively second-mentioned material. Method according to one of Claims 13 to 37, in which an optoelectronic device ( 1 ) according to any one of claims 1 to 11 becomes.