DE102006062770A1 - Semiconductor-illuminant has semiconductor-diode which is illuminated by tension admission, and substrate which is permeable for light produced by semiconductor-diode - Google Patents

Abstract

The semiconductor-illuminant has a semiconductor-lighting unit (26,28), illuminated by tension admission, and a substrate (12) which is permeable for the light produced by the semiconductor-lighting unit. The substrate comprises a glass material or a crystal material which is aluminum oxide. The substrate has a thickness of approximately 0.1 millimeter to approximately 1 millimeter, preferably from approximately 0.1 millimeter to approximately 0.5 millimeter, again preferably from approximately 0.2 millimeter to approximately 0.4 millimeter.

Description

the The invention relates to a semiconductor light source according to the The preamble of claim 1 and a light panel with such.

Semiconductor light sources are known in the form of light-emitting diode lamps, in which the semiconductor crystals of opaque documents are worn.

By the housing is the substrate along with that carried by it Semiconductor light element against mechanical influences from the outside largely protected.

By the phosphor particles, the illuminant generates white light, although the semiconductor light emitting element emits in the UV or in the blue.

Such semiconductor lighting means are for example from the DE 100 27 199 A1 and the DE 102 33 050 A1 known. There, housing components and / or the semiconductor light-emitting elements are coated with phosphor particles, which are distributed in a hardened casting compound, the application of which to the corresponding components can be relatively complex.

A Semiconductor light element in a semiconductor light source must always sufficiently cooled to have a satisfactory service life to ensure the same.

By The present invention is intended to provide a semiconductor lighting means according to the The preamble of claim 1 is developed so that a homogeneous distribution of the phosphor particles around the semiconductor light element around on the one hand and sufficient cooling of the semiconductor light-emitting element on the other hand, structurally simple is guaranteed.

These The object is achieved according to the invention by a semiconductor light source with the features specified in claim 1.

Above the liquid is good heat dissipation from the semiconductor light element away possible. Simultaneously the liquid serves as a carrier for the phosphor particles. On an elaborate coating z. B. the housing and / or the semiconductor light-emitting element can therefore be dispensed with.

Beneficial Further developments of the invention are given in the subclaims.

at the semiconductor lighting means according to the invention is the substrate carrying the luminous semiconductor luminous element transparent to the light generated by the semiconductor luminous element. To Light emitted from the rear is therefore not lost and can be used with mirrors arranged behind the illuminant if necessary can ensure that the light which is emitted to the rear, also enters the front half-space.

the Materials specified in claim 2 for the semiconductor light-emitting element supporting substrates are not only translucent but clear in volume so that the substrate does not cause any light scattering leads.

That The substrate specified in claim 3 is particularly characterized by good hardness and good light transmission in one large wavelength range. This substrate. is also particularly chemically resistant and therefore also as Base can be used well in lithographic processes.

the in claim 4 specified thickness ratios for the substrate are in terms of light weight and low cost of the substrate is an advantage.

Used three-layer structures are used as light sources in the semiconductor luminous element, as indicated in claim 5, it is the lighting element supplied electrical energy with particularly high efficiency implemented in light and the spectrum can be influence.

Even the developments of the invention according to the claims 6 to 8 serve a high light yield in the semiconductor light element.

at a lighting means according to claim 9 can also the light generated inside the semiconductor element is used for useful purposes are fed. Light can also come through behind the semiconductor light-emitting elements standing mirrors are reflected in the front half-space.

the Further development of the invention according to claim 10 also allows spatially extended lighting to be implemented, in particular, flat lighting means.

the Further development of the invention according to claim 11 is advantageous in terms of high luminance.

With the arrangement according to claim 12, a high luminance is obtained in the event that the semiconductor light-emitting elements are only partially transparent to light or are opaque, the light emitted in the forward or reverse direction being used for both sets of semiconductor light-emitting elements will. The fact that the semiconductor light-emitting elements of the two sets are arranged on different sides of the substrate also has Advantages in terms of good heat dissipation from the semiconductor light-emitting elements.

Included is the development of the invention according to claim 13 is with regard to the realization of flat lighting means advantageous.

as translucent liquid has according to claim 14 especially silicone oil has been tried and tested. This is drawing is also characterized by great chemical resistance even at high temperatures.

at a lighting means according to claim 15 works Outer housing, if necessary, together with an between Outer housing and the semiconductor light-emitting elements carried substrate filled medium a lens, which brought about a bundling of the light.

claim 16 indicates possibilities for this, additional the white light generating phosphor particles uniformly to distribute.

the Further development of the invention according to claim 17 has the advantage that a very thin flat pn-layer current is supplied in a distributed manner. This means, that the luminance of the semiconductor light-emitting element is evened out will.

Even the development of the invention according to claim 18 is with regard to large equally strong luminous areas of the semiconductor light element is an advantage.

This The goal is with an arrangement of the contact conductor tracks as shown in Claim 19 is indicated, achieved particularly well.

the Further development of the invention according to claim 20 makes it possible to make the contact conductor tracks themselves relatively thin to train. Such thin contact conductors would if the power is fed in only at a single point to somewhat non-uniform luminance of the semiconductor luminous element lead, since the contact conductors are a weighty Have ohmic resistance. In a semiconductor lighting element according to claim 24 the distribution of the feed current takes place over from the Contact conductors separate feed conductors of the base substrate, which are made with greater thickness can and thus a significantly lower ohmic resistance exhibit.

at a lighting means according to claim 21 can also the light from the semiconductor elements emerging towards the base substrate be used.

That The base substrate material specified in claim 22 is characterized by good quality Hardness and good light transmission in one great Wavelength range off. One such base substrate is also good chemical resistance and therefore also included as a base lithographic process can be used well.

the in claim 23 specified thickness ratios for the base substrate are on the one hand in terms of low weight and good mechanical stability on the other hand an advantage.

at a lighting means according to claim 24 is used The base substrate doubles as a reflector that brings it into the rear emitted light back to the front room.

the Further development of the invention by claim 25 allows the base conductor tracks to be attached directly to the base substrate without an intermediate layer, which at the same time represents a reflector.

the Materials mentioned in claim 26 for the base substrate are in terms of purity, chemical resistance and good thermal properties are an advantage.

For In some applications it is advantageous to use a standard light source to have what light equally forward and backward radiates. According to claim 27, such a light source can be used modify so that the total of the semiconductor light-emitting element emitted light for applications deviating from the standard case is radiated forward.

the Further development of the invention according to claim 28 is advantageous with regard to the good efficiency of the reflector part.

light Semiconductor light emitting elements are mechanically sensitive Structures. With the development of the invention according to claim 29 it is achieved that the lamp is good against damage is protected.

the Developments of the invention according to the claims 30 to 32 allow the lamp with a ho hen operating voltage to operate in the range from a few 100 V to a few kV. These is for some use cases where the presence a high voltage is to be tested, an advantage. at a lighting means according to one of the claims 34 to 36 are not needed for such purposes Voltage divider.

Included is the development of the invention according to claim 33 again with a view to generating white light high efficiency is an advantage.

A lamp as claimed in claim 34 is given, can be operated directly with a high voltage source.

By the development according to claim 35 is the mechanical one Improved stability of the light element.

Usually semiconductor light-emitting elements are made from an EPI wafer, i. H. one from a semiconductor single crystal cut wafer. the Semiconductor light-emitting elements are used for this purpose by means of and known photolithographic and / or dry etching processes constructed from the EPI wafer. The carrier substrate is included often formed from the wafer material itself, which in turn carries the built-up semiconductor light-emitting element. The wafer must then consequently be cut sufficiently thick so that the finished semiconductor light-emitting element has sufficient mechanical stability and has strength. The achievable mechanical load capacity however, are already due to the brittleness of the wafer itself There are limits. That material goes beyond that of the wafer, which is used as the carrier substrate in the finished semiconductor light element serves for the formation of semiconductor light-emitting elements lost.

That However, semiconductor light-emitting element can also start from a substrate a different material than that of the wafer. In this case, too, the stability of the lighting element is enhanced guarantees the substrate.

the Design of the lighting means according to claim 35 offers the possibility that if the substrate is formed from the wafer material, less than wafer material Substrate must be used. The substrate made of wafer material can therefore be thinner than with known semiconductor light-emitting elements be trained. This saves wafer material and production costs are reduced overall. The required mechanical stability and Resilience of the lighting element can be determined by an appropriate choice of the material for the base substrate can be achieved.

Included a training according to claim 36 is advantageous. When using such glasses, glass materials have become Proven to be favorable, the composition of which is about one corresponds to the composition specified in claim 37.

Such Commercial glass materials have good mechanical properties Properties and are also largely insensitive to Temperature fluctuations and other external influences. In addition, they are about a proportion large wavelength range transparent.

Even by an embodiment according to claim 38 or 39 the production costs of the luminous element are reduced, since less Wafer material must be used as the substrate.

the The desired main direction of radiation of a light source is usually the direction opposite to the substrate, wherein a semiconductor light emitting element normally emits light in essentially all spatial directions. To increase the light output of the light element is a training according to claim 40 favorable. Namely, the semiconductor luminous element radiates when voltage is applied Light emits through the transparent base substrate, so becomes this light from the reflective layer towards the desired main direction of radiation of the light source is reflected and also contributes to the light output of the lighting element at.

In in practice it has proven to be advantageous if the base substrate has a thickness according to claim 41. With these thicknesses the base substrate will have good mechanical stability of the luminous element reached.

at a further development, it is advantageous with regard to the substrate, if this has a thickness according to claim 42.

claim 43 indicates a light panel, which is also available in very large Dimensions can be made as the individual light sources have good mechanical stability.

at a light panel according to claim 44 is all light produced is emitted into the same half-space.

the Further development of the invention according to claim 45 is in terms of good brightness uniformity of the light panel is an advantage.

Below the invention is based on embodiments below Referring to the drawing explained in more detail. In this show:

1 a schematic plan view of a luminous element unit, which alone or together with the same units arranged in a housing can form a luminous means;

2 a view of a semiconductor luminous means, which a plurality of luminous element units according to 1 includes;

3 a plan view of another semiconductor light source;

4th a section through an extensive, flat semiconductor light panel;

5 an enlarged plan view of a lighting component;

6th a plan view of a lamp, which can be made by bonding the lamp component of 5 on a base substrate;

7th a schematic lateral representation of a diode-like luminous means in terms of its external geometry;

8th a plan view of a modified lighting means, which has six light-emitting semiconductor lighting elements;

9 a view similar to 8th However, the lamp is modified so that it emits white light and can optionally also be operated with a high voltage;

10 a further embodiment of a luminous means which comprises a plurality of semiconductor luminous elements;

11 a plan view of an enlarged section of the illuminant from 10 , wherein a semiconductor luminous element can be fully recognized;

12th a section through the in 11 The section of the illuminant shown along the section line XII-XII there;

13th a modification of the lighting means according to Figure 10, wherein no mirror coating is provided; and

14th a section of the illuminant vo 5 corresponding modified design of the light source from 10 without base substrate.

In 1 is with 10 as a whole denotes a luminous element unit which has a transparent substrate _{made of corundum glass (Al 2} O _{3 glass)} 12th includes. Such glasses are also sold under the name sapphire glass. They are characterized by high mechanical strength, good electrical insulation properties and good thermal properties. The substrate 12th in practice has a thickness of 300 to 400 μm.

On top of the substrate 12th is a total with 14th designated first electrode arranged.

This comprises a central connecting conductor 16 that have transverse arms 18th , 20th parallel to the connecting conductor 16 running contact arms 22nd , 24 wearing.

Two flat light elements 26th , 28 are so about the connecting conductor 16 and the contact arms 22nd , 24 placed that they partially overlap the latter in the transverse direction, as can be seen from the drawing.

Each of the lighting elements 26th , 28 comprises three layers: a lower layer 30th , which is the connecting conductor 16 and the contact arms 22nd , 24 is contacted and made of a p-type III-V semiconductor material, for. B. InGaN.

A middle layer 32 is an MQW layer. MQW is the abbreviation for multiple guantum well. An MQW material represents a superlattice which has an electronic band structure that has been modified in accordance with the superlattice structure and which accordingly emits light at different wavelengths. The spectrum of the light elements can be determined via the parameters of the MQW layer 26th , 28 the emitted light.

An upper layer 34 is an n-type or intrinsic layer which z. B. can consist of GaN.

the three layers are so thin overall that the entire three-layer structure permeable to light is.

On top of the structure described above is a second electrode 36 vaporized.

This has a connecting conductor 38 which is laid over a thin layer of oxide on the structure described above and over transverse arms 40 , 42 Contact arms 44 , 46 wears that in the middle over the top layers 34 of the lighting elements 26th , 28 get lost.

The electrodes 14th , 36 come with an upper connection plate 48 or a lower connection plate 50 connected, which are connected to the terminals of a voltage source under operating conditions.

In this way the luminous elements give 26th , 28 when voltage is applied in the reverse direction, it emits light which, in the case of the above-mentioned semiconductor materials, is in the range from 280 to 360 nm and 360 to 465 nm.

This light can be used by the luminous element unit 10 leave on both sides as the substrate 12th and also the electrodes 14th and 36 are transparent.

In practice, a light element unit is used 10 , as described above, in a transparent housing 52 built in, which is in 1 is only shown in dashed lines.

In the space between the housing 52 and the luminous element unit 10 is silicone oil 54 filled. This liquid serves to dissipate heat from the lighting element unit 10 . It is so chemically inert that it is in direct contact with the materials of the luminous element unit 10 can step without them suffering from it. Silicone oil can also be degassed very effectively and permanently and is transparent in the wavelength ranges of the electromagnetic radiation that are of interest here.

For mechanical connection of the substrate 12th to the housing 52 serves a glass base 58 .

The light element unit 10 forms together with the outer housing 52 and the volume of silicone oil enclosed in this total 56 designated illuminant.

That Liquid volume is only an example in the drawing shown in part of the interior of the housing. In reality it completely fills the inside of the housing the end. This also applies to the other figures.

A plurality of lighting element units can be used to increase the amount of light from the lighting means 10 as described above with reference to 1 have been explained, summarize on a common substrate. A corresponding light source 56 is in 2 shown. Components described above with reference to 1 have already been explained in functionally equivalent form are again provided with the same reference numerals. These do not need to be described again in detail below.

It can be seen that on the substrate 12th six lighting element units are arranged, three of which are electrically connected in series. The two sets of three lighting element units connected in series 10 are connected in parallel between the connection plates 48 , 50 switched.

As explained above, the luminous element units radiate 10 in the case of the mentioned semiconductor materials in the ultraviolet and in the blue.

In order to realize a white light source using these luminous element units, silicone oil is contained in the 54 Phosphor particles 60 distributed, which are made of a transparent solid material having color centers.

There are three types of phosphor particles used, each of which is used by the luminous element units 10 absorb emitted UV light and blue light and emit in blue, yellow and red. The proportions between the three phosphor particles are selected so that, taking into account a possibly different degree of efficiency of the light wave conversion for the various phosphor particles, the lighting means as a whole 56 receives a white light.

As an alternative or in addition, provision can be made for the inner surface and / or the outer housing 52 with phosphor particles 60 is coated. This can e.g. B. be done by the fact that the corresponding side of the outer housing 52 covered with a transparent varnish and blown the phosphor particle mixture onto it while still sticky. This is in 2 also shown in an enlarged section.

Again, as an alternative or in addition, such a particle coating can also be used for the luminous element unit 10 as also in 2 shown in an enlarged section.

As stated above, is the entire luminous element unit 10 transparent (both the substrate 12th as well as the electrodes 14th , 36 as well as the lighting elements 26th , 28 ). For this reason it is preferable to use the back of the substrate 12th exactly the same arrangement of electrodes and light elements is applied again.

This gives the same volume of light source 56 twice the amount of light.

3 shows an even more extensive flat light source 56 how it can be used for backlighting displays. The luminous element units arranged in a matrix can be seen 10 , now the ones on either side of the substrate 12th arranged light element units are offset from one another. Such an arrangement is chosen when the lighting element units 10 themselves are not translucent.

The outer casing 52 now consists of an outer frame 62 and cover plates 64 , 66 . These have a roughened inner surface like matt glass in order to even out the luminous flux.

The embodiment according to 4th shows a semiconductor light panel 68 . Inside one similar to in 3 trained panel housing 70 individual cylindrical illuminants 56 arranged as they are in 2 are shown, but the number of series-connected lighting element units 10 of a light source can be larger, e.g. B. 10 or 20th Units.

The panel housing 70 has a frame 72 and cover plates 74 , 76 all of which are transparent are. The lower cover plate carries 74 a mirror layer 78 so that the whole of the illuminants 56 generated light is emitted to one side.

The one between the individual lamps 56 and the panel housing 70 lying space is again with silicone oil 80 filled to promote heat dissipation to the environment. In this there are again phosphor particles 60 distributed as described above.

A matted lower boundary surface 82 the cover plate 76 ensures uniform luminance of the light panel.

The embodiment according to 5 resembles that after 1 . The contact arms 22nd , 24 and 44 , 46 are not directly connected to conductive tracks that supply current, as they are in 1 at 16 and 38 are shown, rather seven connection pads n1 to n7 are provided distributed over their length. The contact arms wear accordingly 44 , 46 Connection pads p1 to p6.

on the connection pads ni (i = 1 to 7) and / or pi (i = 1 to 6) a small volume of solder is applied in each case (not shown), which melts at about 350 ° C.

The contact arms are connected to the bottom or top of a single flat lighting element 26th that again from the three layers 30th , 32 and 34 consists.

To the shift 30th to be able to contact from the same side as the shift 34 and also to the middle area of the layer 30th Having access assigns the shift 34 a central slot-shaped recess 15th on in which the conductor track section 16 takes place at a lateral distance.

6th shows a plan view of a lower base plate 84 on which the light element unit 10 from 5 can be soldered on so that the in 5 top side down and the top side of the base plate 84 contacted.

The base plate 84 has a positive feeder path 86 and a negative feeder line 88 . These have essentially the same geometry as the electrodes 14th and 36 and are also provided with connection pads n1 to n7 and p1 to p6, so that when the in 5 lamp unit shown on the base plate 84 the electrodes 16 , 36 at several spaced-apart locations with the feeder tracks 86 , 88 get connected.

The feeder lines 86 , 88 can be much thicker on the base plate 84 be upset (in practice 4th until 10 times as thick) and therefore have a much lower resistance than the very thin electrodes 14th , 36 , the thickness of which is 10 μm to 40 μm in practice.

The electrodes 14th , 36 and the feeder lines 86 , 88 a copper-gold alloy is obtained by vapor deposition. Alternatively, silver or aluminum alloys can also be used.

The feeder lines 86 , 88 are with great contacts 90 , 92 connected, via which the connection to the power supply takes place.

In a practical embodiment of the in 5 and 6th The light source shown consists of the layer 30th of the lighting elements 26th made of InGaN and the layer 34 made of GaN. The middle class 32 is again an MQW layer (multiple quantum well layer), which forms a superlattice through which the wavelength of the emitted light can be influenced.

The substrate plate 12th in the practical embodiment has an edge dimension of approximately 1 mm with a thickness of approximately 0.15 mm. The base plate 84 has edge lengths of about 1.9 mm and 1.5 mm and a plate thickness of about 0.4 mm. Both plates are cut from sapphire.

the Connection pads are usually made of gold manufactured, which for connection to a p-type layer or an n-type layer is doped.

The above with reference to the 5 and 6th described construction allows a substantially continuously transparent light source with uniform luminance.

According to 7th is the light element unit 10 from which the substrate plate 12th and the base plate 84 are only indicated schematically, inside a bowl-shaped reflector 94 arranged. This has a conical peripheral wall which tapers to a point at the top 96 , a bottom wall 98 and a contact pin 100 .

Over a wire 102 the light element unit is electrical with the reflector 94 tied together.

Another wire 104 connects the second connection terminal of the light element unit to a further contact pin 106 that is parallel at a distance from the contact pin 100 is arranged.

The light element unit 10 is with a conversion material 108 layered, which is a silicone / phosphorus mixture. This is Phos phor material again is a mixture of different phosphor materials that are used by the light element unit 10 absorb emitted light and emit in blue, yellow and red, as described above.

The entire unit described above is in a volume made of transparent epoxy resin 110 embedded, which has a cylindrical basic geometry with a possibly dome-shaped end surface, as is known per se from light elements.

8th shows a lamp which is similar to the one according to 2 . Comparable parts are again provided with the same reference numerals.

A difference to the light source after 2 consists in the fact that after the lamp 8th two light element units 10 Back to back in the case 52 are built in.

It is also provided that the inner surface of the housing 52 additionally a phosphor layer 112 which again represents a mixture of phosphor particles that absorb the light emitted by the luminous elements and emit in blue, yellow and red.

Generously dimensioned connection plates 102 ' and 104 ' are made of metal and also serve to dissipate heat from the lighting elements.

The case 52 is a glass cylinder 52 which is under a vacuum of about 2.66644 to 0.066661 pascals.

On the inside of the glass wall of the housing 52 is a grid-shaped electrode 114 applied from graphite. The graphite electrode 114 stands with a connection 116 in connection, from a high voltage source 118 voltage can be applied to it. This can be in the range from 220 V to 10 kV.

This in 9 The lamps produced can optionally be operated with low voltage (application of a voltage of around 7.5 to around 11 V to the connection plates 48 , 50 ) or operated with high voltage (applying high voltage to the connection 116 and connection of ground to the connection plate 50 ).

The electrode can be used to produce white light 114 load-bearing inner surface of the housing 52 again with a phosphor layer 112 be occupied as described above. The phosphor layer can 112 at the same time the grid mesh of the electrode 114 to complete.

With reference to the 5 until 9 In the illustrated embodiments, the production of the lighting means takes place in three sub-steps: Production of the lighting element unit 10 on the sapphire substrate 12th , the manufacture of the sapphire base plate 84 and the feeder tracks carried by it 86 , 88 and connecting the luminous element unit 10 and base plate 84 .

On the connection pads n1 to n7 and p1 to p6 of the substrate plate 12th and / or base plate 84 small droplets of soldering material were applied during their production, which are then melted together in a hot process at around 350 ° C under the action of pressure. After the solder has cooled down, there are light elements 10 and base plate 84 mechanically and electrically connected at the same time.

the leave all manufacturing steps for the lamps thus easily using the known semiconductor manufacturing processes carry out.

In 10 is in a further embodiment with 1010 denotes a light element unit, which is a base substrate 1012 includes. The basic substrate 1012 can be made of a common, transparent, temperature- and chemical-resistant glass, as is often used in technology. Alternatively, for the base substrate 1012 a ceramic or a metal plate made of, for example, copper or aluminum can be used. In practice, the base substrate has a thickness of approx. 1 mm.

On the base substrate 1012 is a transparent substrate 1014 made of corundum glass (Al ₂ O ₃ glass). Corundum glass is also known as sapphire glass. The substrate 1014 In the present exemplary embodiment, it has a thickness of approximately 200 μm, but, as mentioned at the beginning, it can also have other thicknesses, which can be between 5 and 400 μm.

The substrate 1014 in turn carries six spaced apart semiconductor light-emitting elements 1016.1 , 1016.2 , 1016.3 , 1016.4 , 1016.5 and 1016.6 , which are largely identical and below using the example of the semiconductor light-emitting element 1016.2 based on 11 and 12th are explained in more detail.

The semiconductor light element 1016.2 comprises three layers. A lower layer 1018 is made of a p-conducting III-V semiconductor material, for example GaN. A middle layer 1020 is an MQW layer. An upper layer 1022 is an n-type layer, which z. B. consists of InGaN.

The semiconductor light element constructed in this way 1016 - and thus the light element unit 1010 - emits ultraviolet light and blue light in a wavelength range from 420 to 480 nm when a voltage is applied. A white-light LED can be equipped with such semiconductor light-emitting elements 1016 can be obtained in that the luminous element unit 1010 in the LED is surrounded by a silicone oil in which phosphor particles are homogeneously distributed. Suitable phosphor particles are made from a transparent solid material having color centers. About that of the semiconductor light-emitting elements 1016 To convert emitted ultraviolet and blue light into white light, three types of phosphor particles are used, which absorb the ultraviolet and blue light and emit in the blue, yellow and red.

By the semiconductor light-emitting element 1016 made of layers 1018 , 1020 and 1022 that are formed from other materials can be a semiconductor light-emitting element 1016 which, depending on the selected materials, can emit light other than ultraviolet or blue light.

The p-type layer 1018 protrudes laterally over the MQW layer 1020 and the n-type layer 1022 out. In an edge area of the p-conductive layer is next to the MQW layer 1020 and the n-type layer 1022 a conductor track 1024 vapor-deposited, at the respective end of which a connection contact n1 or n2 is provided.

Around the p-type layer 1018 The MQW layer has the ability to contact in the middle 1020 and the n-type layer 1022 a common slot-shaped recess 1026 on. A conductor track runs in this at a lateral distance 1028 , in which in the middle of the semiconductor light element 1016 another connection contact n3 is provided. The conductor track 1028 runs perpendicular to the conductor track 1024 and is connected to this, so that the conductor tracks 1024 and 1028 together form an overall T-shaped conductor track with the three connection contacts n1, n2 and n3. Along the two to the conductor track 1028 parallel edges of the p-type layer 1018 two connection contacts n4 and n6 or n5 and n7 connected to this are also provided (cf. 11 ).

On the n-type layer 1022 is a U-shaped conductor track 1030 vapor-deposited, the base of which is the conductor track 1024 on the p-type layer 1018 opposite and the two side legs of the conductor track 1028 flank, as is particularly the case in 11 can be seen.

The conductor track 1030 is provided with six connection contacts p1 to p6, three of which on each side leg of the U-shaped conductor track 1030 are arranged.

The conductor tracks 1024 , 1028 and 1030 are obtained by vapor deposition of a copper-gold alloy. Alternatively, silver or aluminum alloys can also be used. The connection contacts n1 to n7 and p1 to p6 are made in the usual way from gold, which is doped in a manner known per se for connection to a sliding layer or an n-conductive layer.

At the in 10 fully recognizable light element unit 1010 with six semiconductor light elements 1016 are three semiconductor light elements each 1016.1 , 1016.2 and 1016.3 as 1016.4 , 1016.5 and 1016.6 one set each electrically connected in series. With the external semiconductor light elements 1016.1 and 1016.4 of a set are the conductor tracks 1024 each with a connecting plate 1032 tied together. The conductor tracks are in a corresponding manner 1030 of the opposite outer lying semiconductor light emitting elements 1016.3 , 1016.6 a set of three series-connected semiconductor light-emitting elements, each with a connection plate 1034 tied together.

The two sets of three series-connected semiconductor light-emitting elements 1016 are connected in parallel between the connection plates 1032 and 1034 switched. Under operating conditions of the light element 1010 are the connecting plates 1032 and 1034 connected to the terminals of a voltage source not specifically shown here.

During the production of the luminous element described above 1010 becomes the basic substrate 1012 , for example a glass plate with a thickness of 1 mm, with the substrate 1014 made of sapphire glass (Al ₂ O ₃ glass) coated. On the sapphire crystal 1014 a GaN wafer is again applied. Using the methods known per se of photolithography and dry etching, the GaN material is then placed on the substrate 1014 the semiconductor light-emitting elements 1016.1 until 1016.6 built up and by vapor deposition of the conductor tracks 1024 , 1028 and 1030 accomplished.

As far as the area of the base substrate and of the substrate with GaN material applied thereon allows, several semiconductor light-emitting elements are used 1016 different lighting elements 1010 generated in one process and the various lighting elements 1010 then using known techniques from the base substrate 1012 cut out.

The semiconductor light elements 1016.1 until 1016.6 of a cut-out luminous element are in series or parallel as described above switched.

The semiconductor lighting elements 1016 opposite side of the base substrate 1012 is additionally with a mirror coating 1036 provided (cf. 12th ). If instead of a glass a ceramic or a metal with a reflective effect for the base substrate 1012 is used, there is no need for a mirror on the back.

If for the base substrate 1012 If a glass is used, a boron-alumina glass is particularly suitable. Such glasses are sold under many names. In summary, all glasses that have sufficient resistance to external influences, such as temperature fluctuations and chemicals, can be used.

Any semiconductor lighting element 1016 can also be referred to as a semiconductor chip. In the exemplary embodiment described here, such a single semiconductor chip has a side length of 1500 μm. Thus, a single semiconductor chip has 1016 an area of 1500 μm × 1500 μm. A single semiconductor chip has a power consumption of 2.25 W. With an arrangement of six semiconductor chips 1016 In the 2 × 3 matrix shown, this results in a total of 13.5 W input power.

Becomes a single semiconductor chip 1016 built with an area of 1800 μm × 1800 μm, this results in a power consumption of 3.24 W. This results in 2 × 3 semiconductor chips 1116 a total power consumption of 19.44 W. With the latter configuration, a light output of around 1555 lumens is achieved.

A modification of the light element unit 1010 after the 10 until 12th is in 13th based on a Leutelement unit 2010 shown. The 10 until 12th corresponding components carry in 13th the same reference numerals plus 1000 . The one above for the light element unit 1010 What has been said also applies accordingly to the light-emitting element unit 2010 .

In contrast to the 10 until 12th light element unit shown 1010 is at the light element unit 2010 no mirroring provided.

Since no mirror coating is provided, every semiconductor light element is used 2016 Light emitted in almost all spatial directions. With every semiconductor light element 2016 or with the light element unit 2016 the luminous effect of a lightbulb, which can be recognized by a viewer, can be imitated. The light element unit 2010 during operation, for example, be accommodated in a corresponding housing from which light can emerge in all spatial directions.

Another modification of the light element unit 1010 after the 10 until 12th is in 14th based on a Leutelement unit 3010 shown. The 10 until 12th corresponding components carry in 14th the same reference numerals plus 2000 .

The one above about the light element unit 1010 What has been said also applies accordingly to the light-emitting element unit 3010 .

The light element unit 3010 with the semiconductor light-emitting elements 3016 has neither a mirror nor a base substrate. The light element unit 3010 corresponds to in 5 shown illuminant 10 . I. E. a semiconductor element 3016 is from a substrate 3014 worn, which from the above to the carrier substrate 14th of the embodiment of 10 until 12th mentioned materials, in particular made of sapphire glass (Al ₂ O ₃ glass).

Also with the light element unit 3010 or with the semiconductor lighting elements 3016 the luminous effect of a lightbulb, which can be recognized by a viewer, can be imitated.

QUOTES INCLUDED IN THE DESCRIPTION

This list of the documents listed by the applicant has been automated and is for better information only of the reader. The list is not part of the German one Patent or utility model registration. The DPMA takes over no liability whatsoever for any errors or omissions.

Patent literature cited

• - DE 10027199 A1 [0005]
• - DE 10233050 A1 [0005]

Claims (45)

Semiconductor light sources with a) at least one semiconductor light element that lights up when voltage is applied ( 26th , 28 , 1016 , 2016 , 3016 ); b) one the semiconductor light element ( 26th , 28 , 1016 , 2016 , 3016 ) supporting substrate ( 12th , 1014 , 2014 , 3014 ), which ( 12th , 1014 , 2014 , 3014 ) for the from the semiconductor light element ( 26th , 28 , 1016 , 2016 , 3016 ) generated light is transparent; c) one for the one of the semiconductor light element ( 26th , 28 , 1016 , 2016 , 3016 ) generated light permeable housing ( 56 ) from which the substrate ( 12th , 1014 , 2014 , 3014 ) is worn; where d) the semiconductor luminous element ( 26th , 28 , 1016 , 2016 , 3016 ) radiates in the UV or in the blue; e) inside the housing ( 56 ) Phosphor particles ( 60 ), which emit in blue, yellow and red, in such a way that the illuminant emits white light, characterized in that f) the phosphor particles ( 60 ) in a liquid ( 54 ) are distributed, which the semiconductor light element ( 26th , 28 , 1016 , 2016 , 3016 )) supporting substrate ( 12th , 1014 , 2014 , 3014 ) surrounds. Luminous means according to Claim 1, characterized in that the substrate ( 12th , 1014 , 2014 , 3014 ) comprises a glass material or a crystal material. Luminous means according to Claim 2, characterized in that the glass material or the crystal material is _{an Al 2} O _{3 material.} Luminous means according to one of Claims 1 to 3, characterized in that the substrate ( 12th , 1014 , 2014 , 3014 ) has a thickness of about 0.1 mm to about 1 mm, preferably from about 0.1 mm to about 0.5 mm, more preferably from about 0.2 mm to about 0.4 mm. Lighting means according to one of Claims 1 to 4, characterized in that at least one semiconductor lighting element ( 26th , 28 , 1016 , 2016 , 3016 ) is a three-layer structure, with the first layer ( 30th , 1018 , 2018 , 3018 ) a semiconductor layer, the second layer ( 32 , 1020 , 2020 , 3020 ) one MQW layer and the third layer ( 34 , 1022 , 2022 , 3022 ) is a semiconductor layer. Luminous means according to Claim 5, characterized in that at least one of the semiconductor layers ( 30th , 1018 , 2018 , 3018 , 34 , 1022 , 2022 , 3022 ) comprises a III-V material. Luminous means according to Claim 6, characterized in that one of the semiconductor layers ( 30th , 1018 , 2018 , 3018 , 34 , 1022 , 2022 , 3022 ) is formed by GaN. Luminous means according to Claim 6 or 7, characterized in that one of the semiconductor layers ( 30th , 1018 , 2018 , 3018 , 34 , 1022 , 2022 , 3022 ) is formed by InGaN. Lighting means according to one of Claims 1 to 8, characterized in that the semiconductor lighting elements ( 26th , 28 ) are transparent. Luminous means according to one of Claims 1 to 9, characterized in that a plurality of semiconductor luminous elements ( 26th , 28 ) through nested electrodes ( 14th , 36 ) are contacted. Luminous element according to one of Claims 1 to 10, characterized in that the substrate ( 12th ) on both sides semiconductor light elements ( 26th , 28 ) wearing. Luminous means according to claim 11, characterized in that the on both sides of the substrate ( 12th ) arranged sets of semiconductor light-emitting elements ( 26th , 28 ) are offset from one another. Illuminant according to one of Claims 1 to 12, characterized in that the housing ( 56 ) a plurality of substrates ( 12th , 1014 , 2014 , 3014 ) encloses. Luminous means according to one of Claims 1 to 13, characterized in that the liquid ( 54 ) is a silicone oil. Illuminant according to one of Claims 1 to 14, characterized in that the housing ( 56 ) has at least one curved boundary surface, in particular is rotationally symmetrical. Luminous means according to one of Claims 1 to 15, characterized in that phosphor particles ( 60 ) on the substrate ( 12th , 1014 , 2014 , 3014 ) and / or the semiconductor light elements ( 26th , 28 , 1016 , 2016 , 3016 ) and / or the inner or outer surface of the housing ( 56 ) are applied. Luminous means according to one of Claims 1 to 16, characterized in that the semiconductor luminous element ( 26th , 28 ) extensive contact conductors ( 14th , 36 ) wearing. Luminous means according to Claim 17, characterized in that the two contact conductor tracks ( 14th , 36 ) are arranged in such a way that opposing sections ( 16 , 22nd , 24 , 44 , 46 ) both contact conductors ( 14th , 36 ) have essentially the same distance from each other. Illuminant according to Claim 18, characterized in that the sections ( 16 , 22nd , 24 , 44 , 46 ) of the contact conductors ( 16 , 36 ) interlock like a comb. Luminous means according to one of Claims 17 to 19, characterized in that the contact conductor tracks ( 16 , 36 ) each via a plurality of electrical connection points (n1 to n7, p1 to p6) with feeder tracks ( 86 , 88 ) a base substrate ( 84 ) are connected. Luminous means according to claim 20, characterized in that the base substrate ( 84 ) comprises a glass material or a crystal material. Luminous means according to Claim 21, characterized in that the glass material or the crystal material is _{an Al 2} O _{3 material.} Illuminant according to one of Claims 20 to 22, characterized in that the base substrate ( 84 ) has a thickness of about 0.2 mm to about 2 mm, preferably from about 0.2 mm to about 1.0 mm, more preferably from about 0.4 mm to about 0.6 mm. Luminous means according to one of Claims 20 to 23, characterized in that the base substrate ( 84 ) has a reflective surface. Luminous means according to Claim 24, characterized in that the base substrate ( 84 ) consists of or is coated with an insulating reflective material. Illuminant according to Claim 25, characterized in that that the insulating reflective material is an oxide material, in particular is a ceramic material. Luminous means according to one of Claims 1 to 26, characterized in that behind the semiconductor element ( 26th , 28 ) a reflector part ( 98 ) is arranged. Illuminant according to Claim 27, characterized in that the reflector part ( 98 ) is made of a crystal material, which is preferably mirrored on the back. Lighting means according to one of Claims 1 to 28, characterized in that the semiconductor lighting elements ( 26th , 28 ) using a transparent resin, preferably epoxy resin in the translucent housing ( 56 ) are cast. Illuminant according to one of Claims 1 to 29, characterized in that the inside of the housing ( 56 ) a translucent electrode ( 114 ) and the housing ( 54 ) is evacuated to low pressure. Luminous means according to claim 30, characterized in that the electrode ( 114 ) is designed as a grid. Luminous means according to Claim 31, characterized in that the electrode ( 114 ) is made of graphite. Luminous means according to one of Claims 30 to 32, characterized in that the electrode ( 114 ) with phosphor material ( 112 ) is overlaid. Luminous means according to one of Claims 30 to 33, characterized in that the electrode ( 114 ) with a connector ( 116 ) connected to a high voltage source ( 118 ) is connectable. Luminous means according to one of Claims 1 to 34, characterized in that the substrate ( 1014 , 2014 , 3014 ) in turn from a base substrate ( 1012 , 2012 , 3012 ) is worn. Luminous means according to Claim 35, characterized in that the base substrate ( 1012 , 2012 , 3012 ) comprises a glass material, in particular a boron-alumina glass. Luminous means according to claim 36, characterized in that the composition of the glass material of the base substrate ( 1012 , 2012 , 3012 ) corresponds approximately to one of the following: a) 81% SiO _{2 ,} 13% B ₂ O _{3 ,} 4% alkali, 2% Al ₂ O ₃ ; or b) 57% SiO _{2 ,} 1% Na ₂ O, 12% MgO, 26% Al ₂ O _{3 ,} 4% B ₂ O ₃ . Luminous means according to Claim 35, characterized in that the base substrate ( 1012 , 2012 , 3012 ) comprises a ceramic material. Luminous means according to claim 36, characterized in that the base substrate ( 1012 , 2012 , 3012 ) comprises a metal, in particular copper or aluminum. Luminous means according to one of Claims 35 to 39, characterized in that the substrate ( 1014 ) and the base substrate ( 1012 ) at least partially for those of the semiconductor light element ( 1016 ) emitted radiation are transparent and which the substrate ( 1014 ) opposite side of the base substrate ( 1012 ) with one of these radiation in the direction of the substrate ( 1014 ) reflective layer ( 1036 ) is provided. Illuminant according to one of Claims 35 up to 40, characterized in that the base substrate ( 1012 , 2012 , 3012 ) has a thickness of 0.5 mm to 2.0 mm, preferably 0.75 mm to 1.5 mm and even more preferably about 1.0 mm. Luminous means according to one of Claims 35 to 41, characterized in that the substrate ( 1014 , 2014 , 3014 ) has a thickness from 5 μm to 400 μm, preferably from 5 μm to 200 μm, again preferably from 10 μm to 100 μm and even more preferably from 50 μm to 75 μm. Illuminated panel, characterized by a multiplicity of illuminants according to one of Claims 1 to 42, which are arranged in a plane-parallel cover plate ( 74 , 76 ) having panel housing ( 70 ) are arranged. Light panel according to claim 43, characterized in that a ( 74 ) of the cover plates ( 74 , 76 ) mirrored ( 78 ) is. Light panel according to claim 32 or 44, characterized in that a ( 74 ) of the cover plates ( 74 , 76 ) as a screen ( 82 ) is trained.