DE102006009016A1 - Integrated semiconductor circuit comprises two supply pads with same direct-current voltage potential, where two supply pads are connected to supply and capacitor strip - Google Patents

Abstract

The integrated semiconductor circuit (10) comprises supply pads (11-14) with the same direct-current voltage potential. The two supply pads are connected to one supply and capacitor strip (15,16). The supply or capacitor strips are directed at an area (17) with increased current consumption.

Description

State of technology

The The invention relates to a semiconductor integrated circuit according to the genus of the independent claim.

Out US-6924562 B2 it is known in electromagnetic interference a Decoupling capacitor to use. This decoupling capacitor is outside a circuit, such as a microprocessor arranged.

epiphany the invention

Of the Integrated invention Semiconductor circuit having the features of the independent claim has in contrast the advantage that by connecting at least two supply pads, which are at an equal DC potential, with supply and / or Capacitor strip high-frequency potential differences between these supply pads are reduced and that in addition high-frequency Potential differences on the surface of the semiconductor integrated circuit can be minimized.

When Semiconductor circuit is understood here as a semiconductor circuit, which is a closed component and thus to the outside world only connections and itself encapsulated in the rule.

By those in the dependent Claims listed measures and further developments are advantageous improvements of the independent claim specified integrated semiconductor circuit possible.

Especially It is advantageous that the supply and / or capacitor strip preferably at least one area with increased power consumption lead past, because here is the probability for the occurrence of high-frequency radiation and thus the need of dissipation is particularly high.

Farther is it premature, the semiconductor integrated circuit through the supply and / or To divide capacitor strips into a plurality of nearly equal areas. This also improves or resociates the occurrence of electromagnetic Radiation.

It is also advantageous, depending on the current density to arrange the supply and capacitor strips, because areas high current density or or a high power consumption are for the production of electromagnetic radiation origins. It is the Current density itself already high frequency. High frequency means here what according to textbooks as is high-frequency view.

It is also advantageous, while the capacitor strip both to be arranged in the power supply as well as in the power drain.

A further advantageous arrangement of the supply and capacitor strip this is high at the supply pads and points or areas Power consumption star-shaped to arrange. this leads to then to a structure like a root in a tree and has become for the Reduction of electromagnetic radiation as particularly advantageous proved.

drawing

Embodiments of the invention are illustrated in the drawings and are explained in more detail in the following description. 1 shows a first variant of the semiconductor integrated circuit according to the invention, 2 a second variant, 3 shows a schematic structure of a capacitor strip, 4 shows a schematic structure of a supply line with capacitor strip, 5 shows a capacitor which is produced monolithically, 6 a third variant, 7 a fourth variant, 8th a fifth variant, 9 a sixth variant and 10 a seventh variant of the invention.

description

EMC (electromagnetic compatibility) problems are increasing, especially in safety-critical applications such as personal protection systems in vehicles, in the design of electronic To observe circuits. In particular, the microcontroller in one Airbag control unit can through frequency multiplication and intermodulation products up to the gigahertz range interfering radiation produce. For fighting Such high-frequency signals are used in circuits capacitors used to short the high frequency radiation to ground. According to the invention, it is proposed the supply pads, which are at the same DC potential, connect by means of supply and / or capacitor strip.

1 shows in a first embodiment of this feature of the invention. On a substrate of a semiconductor circuit 10 are four supply pads 11 to 14 each centered. Opposing supply pads are at the same DC potential. They are through supply lines 16 and 15 each with connected to each other. This can be used to derive an EMC fault via the supply lines. In particular, the lines are at one area 17 with high power consumption or high current density, since this is a source of electromagnetic radiation. Supply lines can also be designed as capacitor strips or additionally have capacitor strips.

2 shows a further embodiment of the semiconductor integrated circuit according to the invention. Again, there are opposing pads 21 and 23 and 22 and 24 each connected to each other via supply and / or capacitor strip. It is possible that all four pads are at the same potential, so they are all interconnected. Again, the supply strip 26 near an area 25 arranged, which has a high current density or an increased power consumption compared to the environment. This area can be identified in advance since, for example, here is the arithmetic kernel of a microcontroller. The semiconductor integrated circuit may be a silicon semiconductor circuit, but other semiconductor materials such as gallium arsenide and other compound semiconductors are possible.

3 explains in a simple circuit diagram the structure of a capacitor strip. A line 30 , which leads from pad to pad, which are at the same potential, has in parallel with ground a parallel connection of a plurality of capacitors 31 on. Since the supply pads are at the same electrical potential, there is no short circuit through the line 30 ,

4 shows a modified supply strip 40 , under the below a capacitor strip with the line 41 and the capacitors 42 is arranged. Thus, the supply strip and the capacitor strip are arranged in several levels in the semiconductor substrate. Alternatively, it is possible that below the supply strip 40 Plains are arranged to match the supply strip 40 To form capacitors. The wires 30 . 41 or 40 can be formed by metals or polysilicon.

5 shows an example of a monolithic production of a capacitor. For this purpose, for example, a field effect transistor is taken here, wherein Source 51 and drain 52 be joined together and the gate 50 forms the counter electrode to these other electrodes and thus a capacitor is present. At the connections 53 and 54 then the capacitor voltage can be tapped. The material of the field effect transistor 55 may be differently doped silicon or a MESFET or a HEMT (High Electron Mobility Transistor) or other field effect transistor structures. Between the gate 50 and the semiconductor material 55 usually an oxide layer is provided as an insulator. By a plurality of such capacitors, which are produced in this way, a corresponding capacitance may be provided in the semiconductor substrate. There are also other possibilities of monolithic production of capacitors possible, which are familiar to the expert.

6 shows a further embodiment of the semiconductor circuit according to the invention. The semiconductor circuit 60 has four electrodes 62 to 65 that are at the same electrical potential. These pads are over a grid structure 61 from supply and / or capacitor strips connected to each other, so that on the semiconductor substrate 60 Areas are created that are almost equal. One of these surfaces 66 is an area with an increased power consumption or an increased current density.

7 shows a further embodiment of the semiconductor circuit according to the invention. On the semiconductor circuit 70 again are four electrodes 71 . 73 . 75 and 78 intended. To the pad 71 is an area 72 provided, which is occupied by capacitors. This is also about the pad 73 provided, here an area 74 is defined. This area 74 is over a stretch 702 with another capacitor area 701 connected to an area 700 surrounds, which has a high current density. The capacitor area 701 is still over a stretch 703 with another capacitor area 76 connected to the pad 75 surrounds. Furthermore, the pad 78 through the area 79 surrounded by capacitors.

8th shows a variant of this with non-symmetrically arranged pads. On the semiconductor circuit 800 are the pads 801 . 803 . 805 and 807 arranged. To the pad 801 is the capacitor area 802 provided to the pad 803 the capacitor area 804 around the pad 805 the capacitor area 806 and around the pad 807 the capacitor area 808 , The capacitor area 808 is over the track 809 with a capacitor area 810 connected to an area 811 surrounds with high current density.

In a development, it is provided that capacitor strips are arranged in a star shape or at least a partial star shape around the pads and areas of high current density. 9 shows this variant. On the semiconductor circuit 900 again four pads are arranged symmetrically, the pads 901 . 903 . 905 and 908 , To the pad 901 is arranged a semicircular star structure, denoted by the reference numeral 902 is designated. Similar structures are around the pad 903 with the reference number 904 to the pad 905 with the reference number 906 and around the pad 908 with the reference number 907 intended. To the area 909 High current density is a full-circle-shaped structure of capacitor strips 910 arranged, in part, with the structure 907 overlaps.

10 finally shows a corresponding variant with not symmetrically arranged pads. On the semiconductor circuit 100 are the pads 101 with the semicircular star structure 102 , the pad 103 with the semicircular structure 104 , the pad 105 with the semicircular structure 106 and the pad 108 with the semicircular structure 107 intended. Around the area with high current density 109 again is a full circle-shaped structure 110 intended.

The Pads can be provided at any point of the semiconductor substrate. Next Of course, the supply pads shown here also have connections for the signals, which should process the semiconductor circuit. These are simplicity half omitted here.

present is proposed a root structure, the thick lines for a Main strand and for individual circuit modules gradually thinner lines used.

Claims (6)

Semiconductor circuit having at least two supply pads ( 11 - 14 ) at the same DC potential, the supply pads ( 11 - 14 ) with supply and / or capacitor strips ( 15 . 16 ) are connected. Semiconductor integrated circuit according to Claim 1, characterized in that the at least one supply and / or capacitor strip ( 15 . 16 ) on at least one area ( 17 ) with increased power consumption passes. Semiconductor integrated circuit according to Claim 1 or 2, characterized in that a plurality of supply and / or capacitor strips ( 15 . 16 ) the semiconductor integrated circuit into a plurality of nearly equal areas ( 66 ) is divided. Semiconductor circuit according to one of the preceding claims, characterized in that the at least one supply and / or capacitor strip ( 15 . 16 ) is arranged as a function of a high-frequency current density. Semiconductor integrated circuit according to Claim 4, characterized in that the at least one capacitor strip ( 15 . 16 ) is arranged in each case in the power supply and in the current drain. A semiconductor integrated circuit according to claim 4 or 5, characterized in that the plurality of supply and / or capacitor strips ( 15 . 16 ) at least partially star-shaped around the at least two supply pads ( 11 - 14 ) and / or around the at least one area with the increased power consumption ( 17 ) are arranged.