DE102005025083B4 - Thermoplastic thermoset composite and method for bonding a thermoplastic material to a thermoset material - Google Patents

Abstract

composite (10) with a first part (1) made of a thermosetting material (3) and a second part (2) of a thermoplastic material (7) and a bonding agent layer (5) between them, wherein the first part (1) via the bonding agent layer (5) connected to the second part (2) and wherein the primer layer (5) is pyrolytically deposited Semiconductor and / or metal oxides.

Description

The The present invention relates to a thermoplastic thermoset composite and a method for bonding a thermoplastic material to a thermoset Material.

It is often the need for thermoset components, in particular semiconductor components, with a housing are made of a thermosetting material, with thermoplastic materials to spray as polyethylene terephthalate or polyphenylene sulfide or shed. This is the case, for example, when using a semiconductor device a holder made of a thermoplastic material are provided intended to be installable to the component close.

there or when combining or combining thermosetting with thermoplastic Materials generally has the problem of good adhesion between to provide the two different materials. A possibility provides a deformation of the thermoset surface, for increased adhesion between a thermoset part and a thermoplastic part to be applied thereon to accomplish. However, this is especially true in packages of semiconductor devices not possible.

Also For example, the possibility of Two-component injection molding, by means of which process thermoset thermoplastic composites are created can, not be applied, since it is a subsequent attachment of Components on the already finished processed semiconductor device is.

The Adhesion between a thermoset and a thermoplastic can be achieved by a welding of the Components at their interfaces (Interdiffusion of the molecular chains) arise. This welding can, for example, upon contact of the heated thermoplastic material or the thermoplastic melt on the cooled Duroplastmaterial carried out become. Becomes retroactive a thermoplastic material in a conventional manner to a thermosetting Applied material, there is generally the problem that the adhesion is not sufficient and therefore often leads to delamination.

Therefore It is the object of the present invention to provide a method for Bonding a thermoplastic material to a thermoset material and a thermoplastic thermoset composite to provide, by means of which improved adhesion between the two materials is provided and therefore avoided subsequent replacement becomes.

Is solved this task with the objects the independent one Claims. Advantageous developments of the invention will become apparent from the dependent claims.

According to the invention is a Composite with a first part of a thermoset material, a second part of a thermoplastic material and a provided therebetween adhesive layer. The first Part is over the adhesive layer is connected to the second part. The primer layer has pyrolytically deposited semiconductor and / or metal oxides on.

The adhesive layer according to the invention allows the Heating the thermoplastic material and the thermosetting Material a solid bond between the materials. Through the between the thermoplastic material and the thermosetting material provided adhesion promoter layer becomes a stable permanent bond created between the thermoplastic and the thermoset.

On The reason for the pyrolytic deposition is the adhesive layer Semiconductor and / or metal oxides of a reactive compound Oxygen and organometallic molecules. Under organometallic molecules are understood in this context organic molecules, the semiconductor elements and / or metal elements as radicals and / or central atom. To the organometallic molecules In this context, silanes are also counted, which replace the central one Carbon atoms of organic compounds corresponding tetravalent Semiconductor atoms, such as silicon, have.

The Layer formation itself takes place by the respectively selected deposition conditions on the surfaces of thermosetting plastic or thermoplastic. In addition, the reaction products the pyrolytic deposition environmentally friendly in amorphous form, the ones in extraordinary small quantities arise, be disposed of.

The Pyrolytic deposition has the further advantage of coating the surfaces can be without high temperatures, for example, a temperature of well over 100 ° C, a clog. This is particularly advantageous when coating the surfaces of a semiconductor device package should be. The semiconductor chip of the already finished processed semiconductor device will not be affected. Farther can by adjusting the deposition conditions, the morphology the adhesion promoter layer can be adjusted. The roughness and porosity the layer surface can be adjusted so that an improved anchorage between the Plastic masses of the two parts above the primer layer can be achieved.

advantageous thermoplastic materials are liquid crystalline polymer (LCP), Polyethylene terephthalate (PET), polyethersulfone (PES), polyphenylene sulfide (PPS), polyetheretherketone (PEEK) or polysulphone (PSU).

Especially it is preferred if the thermoplastic material is a high-performance thermoplastic. Also certain engineering thermoplastics, such as PET or Polycarbonate (PC), can be used become.

Farther are advantageous thermosetting materials resins, in particular Epoxy or silicone resin.

In a preferred embodiment the adhesion promoter layer comprises semiconductor and / or metal oxides the elements Al, B, Ce, Co, Cr, Ge, Hf, In, Mn, Mo, Nb, Nd, Ni, Pb, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Si, Sm, Sn, Sr, Ta, Te, Ti, Tl Tm, U, V, W, Yb, Zr or Zn on. These semiconductor and / or metal elements have the advantage that of these elements organometallic compounds are known for the formation of a primer layer with microporous morphology are suitable. It can by mixing different organometallic Starting materials of these semiconductor and / or metal elements in addition the adhesion-promoting properties of the resulting layers as well a color distinction of the adhesive layer of the surface the semiconductor device components achieved in an advantageous manner become. Can do this Mixtures of different organometallic compounds of these listed above Elements by common combustion in a pyrolysis plant or flame pyrolysis plant be formed in an advantageous manner.

The resulting adhesion promoter layer preferably comprises a semiconductor and / or metal oxide of the group Al ₂ O ₃ , B ₂ O ₃ , Ce ₂ O ₃ , CoO, Co ₂ O ₃ , GeO ₂ , HfO ₂ , In ₂ O ₃ , Mn ₂ O ₃ , Mn ₃ O ₄ , MoO ₂ , Mo ₂ O ₅ , Nb ₂ O ₃ , NbO ₂ , Nd ₂ O ₃ , Ni ₂ O ₃ , NiO, PbO, Pr ₂ O ₃ , PrO ₂ , PtO, Pt ₃ O ₄ , Rb ₂ O, ReO ₂ , ReO ₃ , RhO ₂ , Rh ₂ O ₃ , RuO ₂ , SO ₃ , Sb ₂ O ₄ , Sb ₄ O ₆ , Sc ₂ O ₃ , SiO ₂ , Sm ₂ O ₃ , SnO , SnO ₂ , SrO, Te ₂ O ₅ , TeO ₂ , TeO ₃ , TiO, TiO ₂ , Ti ₂ O ₃ , Tl ₂ O ₃ Tm ₂ O ₃ , UO ₂ , U ₃ O ₈ , UO ₃ , VO, V ₂ O ₃ , V ₂ O ₄ , V ₂ O ₅ , WO ₂ , WO ₃ , Yb ₂ O ₃ , ZrO ₂ or ZnO or mixtures thereof. These oxides have the advantage that they can be pyrolytically deposited as finely divided oxides. These oxides also have sufficient thermal and mechanical stability to form a stable and reliable primer layer. A reliable connection between the thermoset and the thermoplastic is thus created.

In a further embodiment According to the invention, the adhesion promoter layer comprises silicate compounds on. Such silicate compounds have the advantage that they have a form chemical bond to the plastic, wherein the silicates via Si-C bonds in the Able to form hydrolysis-stable chemical bonds. however is the interaction between silicates and plastic masses of considerable complexity, whereby also water molecules over the Formation of Oxyhydratschichten a kind of flexible binding state can effect. In addition, there are couplings of silicates with plastics technically already many years proven to have.

From the above other oxides are also expected to have adhesion enhancing effects. These However, adhesion-enhancing effects are significantly lower than those of hydrolyzable groups that over the formation and condensation of Si-OH groups form a silicate skeleton. The Si-OH groups condense with each other and with OH groups of the carrier substrate. Silicate compounds thus have the advantage that they can be mixed with plastic housing compounds, and between the thermoset and the surrounding thermoplastic one can form stable bonds. By the microporous surface structure the adhesion promoter layer according to the invention will also the reaction area increases, and micro-retentive adhesive elements are introduced into the interfaces.

A Such silicate layer also has the advantage that silicates with a variety of elements and materials chemical bonds can be able to so that application of the silicate also makes the training more stable Silicate structures in the interfaces allows.

The average thickness D of the adhesion promoter layer is between 5 nm ≤ D ≤ 300 nm, preferably between 5 nm ≤ D ≤ 40 nm. This allows a strong bond between the thermoset and the thermoplastic, without the parts during heated to the deposition process affecting.

The Adhesive layer is preferably porous, so that the surface between the parts increased and improved mechanical anchoring between the thermoset and the thermoplastic is given. In a further embodiment The invention takes the porosity the adhesion promoter layer of a non-porous coating on the surfaces a part to a microporous Morphology in the transition area gradually to a second part. Due to the gradual increase in porosity from a first closed adhesive layer to a microporous morphology the surface the interlocking between the thermoplastic and the thermoset is intensified.

According to a preferred embodiment, the thermoset material forms a housing of a Semiconductor device and the thermoplastic material forms a housing holder on the housing of the semiconductor device, wherein the housing and the housing holder are firmly connected to each other by the adhesive layer disposed therebetween. According to the invention, the adhesion promoter layer has pyrolytically deposited semiconductor and / or metal oxides. The use of the composite according to the invention is advantageous in the case of components which are to be used in high-load operating situations. Such applications are, for example, components for cars.

One Methods for producing a composite include the following method steps on. A first part that has a surface made of a thermoset Material and a second part, which is a thermoplastic surface Material has been provided. A primer layer is inventively means Pyrolytic deposition on the surface of the first part and / or the surface of the second part. The adhesion promoter layer is pyrolytic deposited semiconductor and / or metal oxides. The first part and the second part is joined together so that the primer layer is arranged between the first part and the second part. The thermoplastic Material and the thermosetting material are heated so that a Connection between the thermoplastic and the thermosetting Material is generated.

at The coating may have a microporous morphology of the semiconductor mediator layer arise, the semiconductor and / or metal oxides of a reactive compound from oxygen and organometallic molecules. This primer layer is preferably applied in an average thickness D between 5 nm ≦ D ≦ 300 nm. This coating is deposited on the surfaces of the thermoset or thermoplastics semiconductor oxides or metal oxides. These semiconductor oxides or metal oxides typically form only in the immediate vicinity of coated surfaces a few nanometers thick closed layer, the same time the surfaces protects against erosion and corrosion. As the coating thickens, the pore density increases, so that a microporous one Morphology occurs, which form a high adhesion to the second part can. The coating process itself can be done by bubbling butane or propane with oxygen in a reaction space containing the organometallic molecules supplied be accelerated.

Preferably For example, a flame pyrolytic deposition is performed during coating. A flame pyrolytic Deposition has the advantage that the above-mentioned reaction products in a fuel gas flow, from which semiconductor oxides and / or Metal oxides of the organometallic compound on the surfaces of Knock down system carrier. In principle, this pyrolytic deposition can be independent of Material of the surfaces respectively. Thus, the flame pyrolysis is simple and universally applicable.

It is therefore possible the thermoset or the thermoplastic or both of the to be joined Parts to be coated. If the case of a semiconductor device thermosetting, it is advantageous to coat the semiconductor device. The coated with a primer layer component can in another separate manufacturing process in a thermoplastic be embedded. This procedure can be done directly by the customer instead of being performed by the component manufacturer. It is also possible the surface of a thermoplastic container with the adhesion promoter layer according to the invention to coat. This has the advantage that uncoated semiconductor devices can be used.

In flame pyrolysis, an organometallic compound of the above-mentioned elements is decomposed in a gas / air flame. The gas used for the gas / air flame is preferably methane, butane or propane. In an optimized flame region, a MeO _x layer is deposited on the surfaces of the assembled semiconductor device components. Under Me, the above-mentioned semiconductor and / or metal elements are understood.

The thereby deposited average layer thickness D is between 5 nm ≤ D ≤ 300 nm, preferably is the average layer thickness D between 5 nm ≤ D ≤ 40 nm. As only a very thin layer is to be applied, the material costs are extremely low. It is possible the warming the parts during the Coating especially in the preferred variant to below Keep 100 ° C. This is particularly advantageous in the coating of semiconductor device housings.

Farther The flame pyrolysis has the advantage that the temperature of the surfaces of the Semiconductor device components does not increase significantly and under suitable process conditions preferably kept below 100 ° C. can be, especially the surfaces only for Seconds with the flame of the coating system come into contact.

through of the method according to the invention can a significant improvement in the adhesion between thermosets and Thermoplastics can be achieved.

Preferably, as the organometallic molecule, a tetramethylsilane and derivatives of tetramethylsilane, preferably tetraethylenesilane, the has a molecular formula of Si (C ₂ H ₅ ) ₄ used. With the addition of propane with the empirical formula C ₃ H ₈ and oxygen O ₂ , silicates SiO _{x are} deposited on the surfaces, while the volatile reaction products form carbon dioxide and water and escape.

In a preferred embodiment of the Process are the flame-pyrolytic coating an organometallic Connection of a semiconductor element or a metal element and oxygen or an oxygen-containing compound with a Fuel gas supplied to a coating system, wherein semiconductor or metal oxides as reaction products of the introduced compounds on the exposed surfaces of the system carrier on all sides deposit. For all-round Abschei tion are preferably a Ring burner used in which a flame ring is generated by the system carrier guided becomes.

In Another preferred implementation of the method before coating the surface surface areas to be freed with adhesion promoter with a protective layer covered. After coating, this protective layer can be used advantageously Ways to swell, so they overlap with the overlapping Adhesive layer on the surface areas to be kept clear can be removed.

In Another preferred implementation of the method the surface areas to be kept free only after coating the surfaces with adhesion promoter again exposed. In this method, before the exposure, the surface areas protected on which the bonding agent should remain. The exposure can be done by laser ablation or by plasma etching.

The The invention also relates to a semiconductor device having a semiconductor chip and a plastic housing, the plastic case a thermoset and a primer layer according to one of the embodiments on at least the surface of the Duroplasts has.

These embodiment has the advantage of having a semiconductor device with a surface that adheres well with a thermoplastic. This is advantageous when the semiconductor device at a customer in a thermoplastic case holder installed or in a thermoplastic mass with other components should be embedded. This may be desirable if in operation the component additional exposed to mechanical stress or environmental pollution. Improved adhesion and a more reliable connection between the thermoset housing and the thermoplastic encapsulation is thus given.

Preferably become the semiconductor package and the case mount connected to each other, thereby making the semiconductor device incorporable becomes.

According to one another preferred embodiment finds the bonding process between the thermoset and the thermoplastic in the form of an encapsulation process at temperatures above 260 ° C instead, the temperature of 260 ° C also the maximum soldering temperature peak for power semiconductor housing corresponds.

According to one more another preferred embodiment The encapsulation process involves the encapsulation of one with a thermoset material potted semiconductor device with a thermoplastic material.

The The invention will be described in more detail with reference to the drawings.

1 shows a schematic cross section through a bond between a thermoplastic and a thermoset;

2 shows a reaction scheme of flame-pyrolytic coating of surfaces with a primer layer comprising silicates;

3 shows a schematic cross section through a semiconductor device, the housing has a primer layer.

1 shows a schematic cross section of a composite 10 , The association has a first part 1 made of a thermosetting material 3 and a second part 2 made of a thermoplastic material 7 , The first part 1 is via a primer layer 5 with the second part 2 connected. The primer layer 5 has flame-pyrolytically deposited silicates. In this embodiment, the first part 1 a thermoset housing of a semiconductor device 20 that in the 3 you can see.

The primer layer 5 has an average thickness D which is between 5 and 300 nm and in the illustrated embodiment of the invention has a preferred thickness which varies between 5 and 40 nm. The lower 5 to 10 nm of the adhesion promoter layer 5 cover the surface 4 of the thermoset housing 1 of the semiconductor device 20 in a completely closed morphology.

Above this range, between 5 and 10 nm, the porosity of the adhesion promoter layer increases 5 to and has a microporous morphology in the uppermost area 6 on. This microporous morphology 6 of the Bonding layer 5 supports the toothing with the thermoplastic compound 7 , In addition, this microporous morphology looks 6 the adhesion promoter layer 5 forming a mechanical anchorage between the thermoset housing composition 3 and the thermoplastic composition 7 in front.

2 shows a reaction scheme of a flame-pyrolytic coating of surfaces with a primer layer having silicates. In order to form such silicates as SiO _x , an organometallic compound in the form of a tetramethylsilane and derivatives of tetramethylsilane, preferably tetraethylenesilane, having a molecular formula of Si (C ₂ H ₅ ) _{4 is} fed to a flame coating plant. This tetraethylene silane has as a central Me atom a silicon atom Si which is surrounded by four organic ethyl molecules -C ₂ H ₅ , as shown on the left side of FIG 2 will be shown.

In the coating plant, the tetraethylenesilane Si (C ₂ H ₅ ) _{4 is,} for example, with a propane gas of the empirical formula C ₃ H ₈ and with oxygen 13 O ₂ mixed and burned, the reaction products being volatile carbon dioxide 7 CO ₂ and water 10 H ₂ O is formed and deposited SiO _x silicates, preferably silica SiO ₂ , on the surface of the parts to be coated, for example, a thermoset or a thermoplastic. Separated by a dash-dotted line is in 2 presented a further reaction possibility in which instead of the propane with a molecular formula C ₃ H ₈ butane with the empirical formula C ₄ H _{10 is} supplied. In this case, two Tetraethylensilanmoleküle with two molecules and twenty-nine butane O ₂ molecules can be located which deposited SiO _x silicate and carbon dioxide to the volatile 16 CO ₂ , as well as to volatile water 22 H ₂ O react in the butane flame. Instead of butane C ₄ H ₁₀ , methane with the empirical formula CH ₄ can also be used for flame pyrolysis.

With such a flame pyrolysis, an SiO _x layer is deposited as a primer layer on the surfaces of the thermoset housing of a semiconductor device. The necessary average layer thickness is only 5 to 40 nm and can be deposited up to 300 nm if necessary. Heating of the semiconductor device can be reduced to less than 100 ° C by a periodic process of the coating. The effective flame time is in the range of seconds. With such a flame coating also a surface cleaning and a surface activation is simultaneously connected, so that the deposited silicates with the plastic surface, in this case a thermoset surface, closely connect. The released reaction products, such as silica in amorphous form, as well as the volatile water and the volatile carbon dioxide can be disposed of as environmentally friendly as possible by the volatile components are introduced into water and the excess silica is collected or precipitated.

3 shows a schematic cross section through a semiconductor device 20 with a semiconductor chip 12 and a lead frame 8th , the one chip island 9 and flat conductors 13 having. The back of the semiconductor chip 12 is on the chip island 9 assembled. The contact surface 18 of the semiconductor chip 12 are with the contact connections 17 the flat conductor 13 over bonding wires 14 electrically connected. The semiconductor chip 12 , Bonding wires 14 , the chip island 9 and the inner parts of the flat conductors 13 are in a thermosetting mass 3 embedded. The outer parts 11 the flat conductor 13 range from the druoplastic mass 3 out. The outer surface 4 the thermoset mass 3 form the outer surface of the semiconductor device 20 ,

The outer surfaces 4 of the housing 1 of the semiconductor device 20 are with a primer layer 5 coated. In this semiconductor device 20 are for improving the surface adhesion between the surfaces 4 of the housing 1 of the semiconductor device 20 and a thermoplastic composition 7 all surfaces 4 with a flame-pyrolytic adhesion promoter layer 5 been provided. The pyrolytic deposited layer 5 has silicates of a reactive compound of oxygen and organometallic molecules and has a porosity 6 and a roughness, which is the anchorage between the thermoset housing mass 3 and the thermoplastic encapsulant 7 improved.

Through the primer layer 5 on the surfaces 4 of the thermosetting housing 1 can significantly improve the adhesion between the thermoset 3 and a thermoplastic 7 be achieved. For this purpose, an organometallic compound or an organosilicon compound is fed into a flame and the resulting silicate or metal oxide from the gas phase on the surfaces 4 the semiconductor components 20 deposited.

This uniform coating can be done in a fire tube or by pulling through the assembled semiconductor devices 20 take place by a flame ring, wherein the residence time in the region of the flame tube or the flame ring is only a few seconds. In the case of a semiconductor device 20 , like it 3 shows are the outer flat conductors 11 , which are not to be provided with a primer layer protected by applying a protective layer from coating in the flame tube or the annular burner.

The with the primer layer 5 coated semiconductor device 20 can after mounting on a circuit board in a thermoplastic 7 reliable embedded so that the component can be better protected against mechanical stress and considerable environmental conditions. The mounting and embedding in a thermoplastic can be performed at the customer to provide a mounting element for another application.

1

The semiconductor device housing

2

housing containers

3

Durolastisches material

4

surface

5

Bonding layer

6

porosity

7

thermoplastic material

8th

Leadframe

9

chip island

10

composite

11

External leads

12

Semiconductor chip

13

flat Head

14

bonding wire

15

16

17

contact area

18

Chip contact surface

19

20

Semiconductor device

Claims (22)

Composite ( 10 ) with a first part ( 1 ) of a thermosetting material ( 3 ) and a second part ( 2 ) of a thermoplastic material ( 7 ) and a bonding agent layer ( 5 ), the first part ( 1 ) via the primer layer ( 5 ) with the second part ( 2 ), and wherein the primer layer ( 5 ) has pyrolytically deposited semiconductor and / or metal oxides. Composite ( 10 ) according to claim 1, characterized in that the thermoplastic material ( 7 ) is a liquid crystal polymer (LCP), polyethylene terephthalate (PET), polyethersulfone (PES), polyphenylene sulfide (PPS), polyetheretherketone (PEEK) or polysulfone (PSU). Composite ( 10 ) according to claim 1, characterized in that the thermoplastic material ( 7 ) is a high performance thermoplastic or a technical thermoplastic. Composite ( 10 ) according to one of the preceding claims, characterized in that the thermosetting material ( 3 ) is a synthetic resin, in particular epoxy resin or silicone resin. Composite ( 10 ) according to one of the preceding claims, characterized in that the adhesion promoter layer ( 5 ) Semiconductor and / or metal oxides of a reactive compound of oxygen and me tallorganischen molecules and at least one of the elements Al, B, Ce, Co, Cr, Ge, Hf, In, Mn, Mo, Nb, Nd, Ni, Pb, Pr , Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Si, Sm, Sn, Sr, Ta, Te, Ti, Tl, Tm, U, V, W, Yb, Zr or Zn. Composite ( 10 ) according to one of the preceding claims, characterized in that the adhesion promoter layer ( 5 ) a semiconductor and / or metal oxide of the group Al ₂ O ₃ , B ₂ O ₃ , Ce ₂ O ₃ , CoO, Co ₂ O ₃ , GeO ₂ , HfO ₂ , In ₂ O ₃ , Mn ₂ O ₃ , Mn ₃ O ₄ , MoO ₂ , Mo ₂ O ₅ , Nb ₂ O ₃ , NbO ₂ , Nd ₂ O ₃ , Ni ₂ O ₃ , NiO, PbO, Pr ₂ O ₃ , PrO ₂ , PtO, Pt ₃ O ₄ , Rb ₂ O, ReO ₂ , ReO ₃ , RhO ₂ , Rh ₂ O ₃ , RuO ₂ , SO ₃ , Sb ₂ O ₄ , Sb ₄ O ₆ , Sc ₂ O ₃ , SiO ₂ , Sm ₂ O ₃ , SnO, SnO ₂ , SrO, Te ₂ O ₅ , TeO ₂ , TeO ₃ , TiO, TiO ₂ , Ti ₂ O ₃ , Tl ₂ O ₃ Tm ₂ O ₃ , UO ₂ , U ₃ O ₈ , UO ₃ , VO, V ₂ O ₃ , V ₂ O ₄ , V ₂ O ₅ , WO ₂ , WO ₃ , Yb ₂ O ₃ , ZrO ₂ or ZnO or mixtures thereof. Composite ( 10 ) according to one of the preceding claims, characterized in that the adhesion promoter layer ( 5 ) Has silicate compounds. Composite ( 10 ) according to one of the preceding claims, characterized in that the adhesion promoter layer ( 5 ) has an average thickness D between 5 nm ≦ D ≦ 300 nm, preferably between 5 nm ≦ D ≦ 40 nm. Composite ( 10 ) according to one of the preceding claims, characterized in that the adhesion promoter layer ( 5 ) is porous and the porosity of the adhesive layer ( 5 ) of a non-porous coating on the surface of the first part ( 1 ) or the second part ( 2 ) to a microporous morphology ( 6 ) in the transition region to the surface of the second part ( 2 ) or the first part ( 1 ) gradually increases. Composite ( 10 ) according to one of the preceding claims, characterized in that the thermosetting material ( 3 ) a housing ( 1 ) of a semiconductor device ( 20 ) and the thermoplastic material ( 7 ) a housing holder ( 2 ) on the housing ( 1 ) of the semiconductor device ( 20 ). Process for producing a composite ( 10 ), comprising the following method steps, - providing a first part ( 1 ), which has at least one surface ( 4 ) of a thermosetting material ( 3 ), - providing a second part ( 2 ) comprising at least one surface of a thermoplastic material ( 7 ), - applying a primer layer ( 5 ) by means of pyrolytic deposition on the surface ( 4 ) of the first part ( 1 ) and / or the surface of the second Part ( 2 ), wherein the adhesion promoter layer comprises semiconductor and / or metal oxides, - joining the first part ( 1 ) and the second part ( 2 ), so that the primer layer ( 5 ) between the first part ( 1 ) and the second part ( 2 ), - heating the thermoplastic material ( 7 ) and the thermosetting material ( 3 ) for producing a connection between the thermoplastic material ( 7 ) and the thermosetting material ( 3 ). A method according to claim 11, characterized in that the adhesion promoter layer ( 5 ) is applied by flame pyrolysis. A method according to claim 11 or 12, characterized in that the pyrolytic coating an organometallic compound of a semiconductor element or a metal element and an oxygen-containing compound of a coating system are supplied and semiconductor or metal oxides as reaction products of the introduced compounds on exposed surfaces ( 4 ) on all sides. Method according to one of claims 11 to 13, characterized in that before coating the surface ( 4 ) with adhesion promoter ( 5 ) to be kept free surface areas are covered with a protective layer. Method according to one of claims 11 to 13, characterized in that after the coating of the surface ( 4 ) with adhesion promoter ( 5 ) exposed surface areas are exposed. Method according to one of claims 11 to 15, characterized in that the adhesive layer ( 5 ) is applied in a thickness D between 5 nm ≦ D ≦ 300 nm, preferably between 5 nm ≦ D ≦ 40 nm. Method according to one of claims 11 to 16, characterized in that the adhesive layer ( 5 ) on the thermosetting material ( 3 ) of a semiconductor device housing ( 1 ) is applied. Method according to one of claims 11 to 17, characterized in that the adhesive layer ( 5 ) on the thermoplastic material ( 7 ) a housing holder ( 2 ) is applied. Method according to claim 17 or 18, characterized in that the semiconductor component housing ( 1 ) and the housing holder ( 2 ). Method according to one of claims 11 to 19, characterized that the connection process is an encapsulation process that comes with Temperatures above 260 ° C takes place. A method according to claim 20, characterized in that the encapsulation process, the encapsulation of one with a thermosetting material ( 3 ) potted semiconductor device ( 20 ) with a thermoplastic material ( 7 ). Semiconductor device ( 20 ) with a semiconductor chip ( 12 ) and a composite according to one of claims 1 to 10, wherein the thermosetting material ( 3 ) a housing ( 1 ) of the semiconductor device and wherein the thermoplastic material ( 7 ) a housing holder ( 2 ) on the housing ( 1 ) of the semiconductor device, wherein the housing ( 1 ) and the housing holder ( 2 ) by the intermediately disposed adhesive layer ( 5 ) are firmly connected.