DE102005010655A8 - Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung - Google Patents
Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung Download PDFInfo
- Publication number
- DE102005010655A8 DE102005010655A8 DE200510010655 DE102005010655A DE102005010655A8 DE 102005010655 A8 DE102005010655 A8 DE 102005010655A8 DE 200510010655 DE200510010655 DE 200510010655 DE 102005010655 A DE102005010655 A DE 102005010655A DE 102005010655 A8 DE102005010655 A8 DE 102005010655A8
- Authority
- DE
- Germany
- Prior art keywords
- microlithography
- production
- optical elements
- lens systems
- obtainable therewith
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000001393 microlithography Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200510010655 DE102005010655A1 (de) | 2005-03-08 | 2005-03-08 | Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung |
EP10012478A EP2280295A1 (de) | 2005-03-08 | 2006-03-06 | Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung |
EP06004496A EP1701179A1 (de) | 2005-03-08 | 2006-03-06 | Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung |
US11/369,306 US7679806B2 (en) | 2005-03-08 | 2006-03-07 | Method for making optical elements for microlithography, the lens systems obtained by the method and their uses |
JP2006062651A JP2006251805A (ja) | 2005-03-08 | 2006-03-08 | マイクロリトグラフィー用光学素子の作製方法、同方法により得られるレンズ系、及び同レンズ系の使用方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200510010655 DE102005010655A1 (de) | 2005-03-08 | 2005-03-08 | Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102005010655A1 DE102005010655A1 (de) | 2006-09-14 |
DE102005010655A8 true DE102005010655A8 (de) | 2007-02-01 |
Family
ID=36914615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200510010655 Ceased DE102005010655A1 (de) | 2005-03-08 | 2005-03-08 | Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102005010655A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008041055A1 (de) * | 2008-08-06 | 2010-02-18 | Carl Zeiss Smt Ag | Transmittierendes optisches Element aus Magnesium-Aluminium-Spinell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6177151B1 (en) * | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
EP1130419A2 (de) * | 2000-03-02 | 2001-09-05 | Canon Kabushiki Kaisha | Optisches Bauteil für den Vakuum-Ultraviolett-Wellenlängenbereich, Ausrichtungsvorrichtung und Verfahren zur Herstellung einer Vorrichtung unter Verwendung des Bauteils |
US20020185611A1 (en) * | 2001-06-04 | 2002-12-12 | The Regents Of The University Of California | Combined advanced finishing and UV laser conditioning process for producing damage resistant optics |
WO2005059618A2 (en) * | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal lens |
-
2005
- 2005-03-08 DE DE200510010655 patent/DE102005010655A1/de not_active Ceased
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6177151B1 (en) * | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
EP1130419A2 (de) * | 2000-03-02 | 2001-09-05 | Canon Kabushiki Kaisha | Optisches Bauteil für den Vakuum-Ultraviolett-Wellenlängenbereich, Ausrichtungsvorrichtung und Verfahren zur Herstellung einer Vorrichtung unter Verwendung des Bauteils |
US20020185611A1 (en) * | 2001-06-04 | 2002-12-12 | The Regents Of The University Of California | Combined advanced finishing and UV laser conditioning process for producing damage resistant optics |
WO2005059618A2 (en) * | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal lens |
Also Published As
Publication number | Publication date |
---|---|
DE102005010655A1 (de) | 2006-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8181 | Inventor (new situation) |
Inventor name: MARTIN, REGINA, 07745 JENA, DE Inventor name: PARTHIER, LUTZ, DR., 14532 KLEINMACHNOW, DE Inventor name: PETERMANN, KLAUS, DR., 22880 WEDEL, DE Inventor name: STäBLEIN, JöRG, 07743 JENA, DE Inventor name: WEHRHAN, GUNTHER, DR., 07749 JENA, DE |
|
8196 | Reprint pf faulty title page (publication); german patentblatt: part 1a6 | ||
OP8 | Request for examination as to paragraph 44 patent law | ||
R002 | Refusal decision in examination/registration proceedings | ||
R003 | Refusal decision now final |
Effective date: 20121019 |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20121002 |