DE102005007280B4 - Method for determining a critical dimension of a laterally structured layer - Google Patents

Abstract

Method for determining a critical dimension of a laterally structured layer (10) on a substrate, comprising the following steps:
a) producing (102) the laterally structured layer (10) with a test mark (78) on the substrate (12) with a layer surface (14) having a first and a second edge (16, 18) facing each other, and having a layerless surface (24) having a third and a fourth edge (26, 28) facing each other, the layer surface (14) having the first and second edges (16, 18) being bonded to non - layered regions (20, 22) of the Substrate (12), the non-layered area (24) having the third and fourth edges (26, 28) adjacent portions (30, 32) in which the substrate (12) comprises the layer (10) first, second, third and fourth edges (16, 18, 26, 28) are arranged side by side and parallel to each other, wherein the first, second, third and fourth edges (16, 18, 26, 28) form a group.

Description

The The present invention relates to a method for determining a critical dimension of a laterally structured layer.

microelectronic and micromechanical components are produced with ever smaller feature sizes. For quality control and improve the yield during the manufacturing process measured critical dimensions. If it is found that a critical dimension does not satisfy a predetermined requirement, for example does not have a setpoint or not within a desired one Interval, various consequences are possible. If the critical dimension on a photoresist or resist mask, a Imid or another mask was determined before their lateral Structure, for example by etching, transferred to the substrate this mask can be washed off and again (lithographically) be generated. If the critical dimension at an already immutable produced structure of the substrate was measured, this can be made removed from the production process to cover the cost of another Avoid processing.

Conventionally a critical dimension typically by sensing a test mark or other lateral structure with known Dimensions determined by a scanning electron microscope. These However, method is not always suitable, for example because electrostatic Charges on thick non-conductive layers, such as Imid, cause image distortion to lead. Besides, they are Scanning electron microscopes expensive to buy and operate.

The Object of the present invention is a simple and inexpensive Specify a method for determining a critical dimension, which especially applicable to imide structures.

The KR 10 2000 0013 606 A describes in the abstract and the associated figure a test mark with two arranged without overlap, rectangular frame.

Peter van Zant describes in his book "Microchip Fabrication" (4th edition, McGraw-Rill, 2000) on pages 252, 253, 256 a processing of wafers after a Inspection without going into concrete forms of test marks.

The KR 10 2001 0028 937 A describes in the summary and the associated figure the arrangement of test marks in Ritzrahmen a wafer.

The DD 245 982 A1 describes test marks with multiple columns of rectangles of different heights. Depending on a critical dimension, the ratio between the height of the rectangles and their spacing in different columns is identical.

The WO 02/19415 A1 describes a number of different test marks for detecting a positional offset between different planes on a wafer, each comprising a plurality of rectangular areas.

These The object is achieved by a method according to claim 1.

preferred Trainings are in the dependent claims Are defined.

The The present invention is used to generate a test mark on a substrate. The test mark comprises a first area or a layer area, within which the substrate has the layer, and a second one area or a layer-free surface, within which the substrate does not have the layer. The first area has a first edge and a second edge which face each other and with those the first surface adjacent to areas where the substrate does not have the layer. The second area has a third edge and a fourth edge that face each other across from and with which the second area adjoins areas in where the substrate has the layer. The four edges are side by side and arranged in parallel. The relative distances of the four edges are indirect Functions of the critical dimension or even identical with it.

The Test mark is preferably generated so that the distance between the first edge and the second edge and the distance between the third edge and the fourth edge are equal if the critical Dimension has its setpoint. This means that the distance between the first and the second edge and the distance between the third and the fourth edge in so far or to the same degree are how the critical dimension has its set point or otherwise expressed to that extent differ as the critical dimension of deviates from their nominal value.

To determine the critical dimension, the test mark is detected or imaged, for example by light microscopy. Based on the image of the test mark, the center between the first and the fourth edge and the middle between the second and the third edge are determined. These centers are strictly related to the edges of parallel lines sections. The distance of the center between the first and fourth edges and the center between the second and third edges is a measure of the critical dimension. It corresponds to the deviation of the critical dimension from its nominal value.

Preferably are both the first surface as also the second surface L-shaped and face each other, that their legs are arranged like the sides of a square. Each leg of the first surface and each leg of the second surface is trapezoidal and thus has two opposite ones parallel edges on. The test brand thus has a total of two groups each with four mutually parallel edges. For each group can, as described above, a distance of the middle between the two outer edges the group of the middle between the two inner edges of the Group as a measure of the critical Dimension be determined. The critical dimension or its deviation from its nominal value can thus be in two mutually perpendicular directions be determined.

The linear dimensions of the test mark, in particular the distances of the Edges, can be much larger as the critical dimension. Preferably, the test mark has linear dimensions in the orders of magnitude of a few μm and is therefore readily optical microscopic with visible light detectable. Each edge is created by a light microscopic picture an intensity profile with a blur in the order of magnitude the wavelength the light used. Through a fit of a mathematical model function to this intensity profile The location of each edge can be determined exactly down to a few nm. The test brand allows thus a determination of a critical dimension with an accuracy of a few nm, without the test mark with a corresponding spatial resolution would have to be recorded for example, by a scanning electron microscope. An advantage The test brand is thus that they are relatively simple and cost-effective Means is detectable.

Preferably becomes the test mark described above with L-shape surfaces, which are arranged in the form of a square frame, so dimensioned that they are a conventional test mark for the determination of the overlay or the positional offset of the mappings of two masks. conventional Bearing offset test marks consist of a square frame or a square opening, which is generated by a first mask and a (square) Area, which is generated with a second mask. This area is arranged centrally to the frame or the opening when the masks without relative position offset on the substrate shown were. For such test marks exist automatic positional displacement measuring devices, which record the test marks by light microscopy and for both Main directions of the test mark the distances of the middle between the outer, through the first mask created edges from the middle between the inner, edges generated by the second mask as a measure of the relative positional offset determine the images of the two masks.

If the test mark and in particular its linear dimensions of a conventional Positional offset test mark are sufficiently similar, it can be automated and accordingly inexpensive be evaluated by a positional displacement measuring device. The of The measured value outputted from the positional displacement measuring device does not then become as a relative positional shift between the mappings of two masks, but as a measure of the deviation the critical dimension of its setpoint.

By the light-microscopic detection or detectability of the test mark It also avoids a number of problems associated with capturing through accompanied by a scanning electron microscope. As an example, be here a detection of a critical dimension in an imide layer mentioned, as for structuring the last contact level or terminal via level of a semiconductor device often used becomes. The smallest openings that can be generated in an imide layer are at least 10 μm in size. It is however difficult with the scanning electron microscopes conventionally for the determination critical dimension, such large structures with the required precision capture. Since imide layers are electrically insulating and in the Usually relatively thick, they are electrostatically from the electron beam charged. This charge in turn leads to a distortion the scanning electron microscope generated image. Both problems will be thereby avoided by replacing a scanning electron microscope a light microscope is used.

preferred Further developments of the present invention are defined in the dependent claims. Show it:

1 a schematic plan view of a test mark according to a first embodiment;

2 a schematic plan view of a test mark according to a second embodiment;

3 a schematic plan view of the test mark of the second embodiment in non-ideal critical dimension;

4 a perspective view of a Mask and a chip; and

5 a schematic flow diagram of a method.

1 is a schematic plan view of a section of a laterally structured layer 10 on a substrate 12 , In the illustrated section, the laterally structured layer 10 a test mark on or is structured as a test mark.

The test mark comprises a first surface or layer surface 14 with a first edge 16 and a second edge 18 , which are opposite each other and parallel to each other. Within the layer area 14 has the substrate 12 the layer 10 on. With the edges 16 . 18 borders the layer area 14 to areas 20 . 22 of the substrate 12 in which the substrate 12 the layer 10 does not have.

The test mark further comprises a second surface or a layer-free surface 24 with a third edge 26 and a fourth edge 28 which are opposite each other and parallel to each other. Within the layer-free area 24 has the substrate 12 the layers 10 not up. With the edges 26 . 28 adjoins the layer-free surface 24 to areas 30 . 32 of the substrate 12 in which the substrate 12 the layer 10 having.

The test mark is scanned or recorded, preferably by light microscopy. The two-dimensional image of the test mark or the location-dependent intensity of the light scattered or reflected by the test mark becomes parallel to the edges in the direction 16 . 18 . 26 . 28 integrated to improve the signal-to-noise ratio. The integrated signal I is in 1 showing the section of the laterally structured layer as a function of the coordinate x (perpendicular to the edges 16 . 18 . 26 . 28 ). It can be seen that every edge 16 . 18 . 26 . 28 a peak or a maximum 34 . 36 . 38 . 40 in the integrated signal I causes. The width of the maximum 34 . 36 . 38 . 40 results mainly from the wavelength of the light used and the imaging performance of the light microscope. It is typically of the order of one wavelength. Around the coordinate x of each edge 16 . 18 . 26 . 28 to determine as accurately as possible, to every maximum 34 . 36 . 38 . 40 fit a mathematical model function or adapt it by optimizing free parameters. As a model function, for example, a Lorentz or Gauss curve or function in question. As a result, the x-coordinates are x ₁ , x ₂ , x ₃ , x _{4 of} the edges 14 . 18 . 26 . 28 exactly determinable up to a few nm.

The test mark is preferably generated such that the distance of the first edge 16 and the second edge 18 or the width of the layer surface 14 and the distance of the third edge 26 and the fourth edge 28 or the width of the layer-free surface 24 are the same when the critical dimension has its setpoint. To the extent that the critical dimension deviates from its nominal value, the widths x ₂ -x _{1 of} the layer surface are different 14 and x ₄ -x _{3 of} the layer-free area 24 from each other. In this case, for example, the first edge 16 and the fourth edge 28 moved to the left and the second edge 18 and the third edge 26 shifted to the right or vice versa. The middle M ₁ between the first edge 16 and the fourth edge 28 and the middle M ₂ between the second edge 18 and the third edge 26 Therefore agree only then as in 1 shown when the critical dimension has its setpoint.

The distance between the center M ₁ and the center M ₂ is a monotonic function of the deviation of the critical dimension from its nominal value. As an approximation, the distance between the center M ₁ and the center M _{2 is} equal to the deviation of the critical dimension from its nominal value. By determining the x-coordinates x ₁ , x ₂ , x ₃ , x _{4 of} the edges 16 . 18 . 26 . 28 , Determining the centers M ₁ , M ₂ and determining their relative position or distance is thus obtained a measure of the deviation of the critical dimension of its setpoint.

2 is a schematic plan view of a laterally structured layer 10 with a test mark on a substrate 12 according to a second embodiment. The test mark of the second embodiment differs from that above with reference to FIG 1 illustrated first embodiment in that the layer surface 14 and the layer-free surface 24 each are L-shaped and made of two trapezoidal legs 141 . 142 . 241 . 242 consist. The first leg 141 the layer surface 14 has a first edge 16 and a second edge 18 on, which are opposite to each other and are arranged parallel to each other. The third leg 241 the layer-free surface 24 has a third edge 26 and a fourth edge 28 on, which are opposite to each other and are arranged parallel to each other. The second leg 142 the layer surface 14 has a fifth edge 42 and a sixth edge 44 on, which are opposite to each other and are arranged parallel to each other. The fourth leg 242 the layer-free surface 24 has a seventh edge 46 and an eighth edge 48 on, which are opposite to each other and are arranged parallel to each other.

The layer surface 14 borders with the first edge 16 , the second edge 18 , the fifth edge 42 and the sixth edge 44 to areas 20 . 22 in which the substrate does not have the layer. The layer-free surface 24 borders with the third edge 26 , the fourth edge 28 , the seventh edge 46 and the Eighth edge 48 to areas 30 . 32 in which the substrate has the layer. The first edge 16 , the second edge 18 , the third edge 26 and the fourth edge 28 are parallel to each other. The fifth edge 42 , the sixth edge 44 , the seventh edge 46 and the eighth edge 48 are parallel to each other and to the first to fourth edges 16 . 18 . 26 . 28 arranged vertically.

The L-shaped layer surface 14 and the L-shaped layerless surface 24 are arranged opposite each other so as to form together a square frame. In other words, the first edge lies 16 , the fourth edge 28 , the fifth edge 42 and the eighth edge 48 on a first, larger square and the second edge 18 , the third edge 26 , the sixth edge 44 and the seventh edge 46 on a second, smaller square. The second, smaller square is centered to the first, larger square, ie, the corners of the smaller square lie on the diagonal of the larger square.

When the test mark is acquired by light microscopy, the positions or coordinates of the edges become 16 . 18 . 26 . 28 . 42 . 44 . 46 . 48 determined by the location-dependent intensity within measurement windows 52 . 54 . 56 . 58 . 62 . 64 . 66 . 68 is evaluated. This is done in a similar way as described above on the basis of 1 has been described. The intensity signals are preferably initially integrated in the direction parallel to the corresponding edge. The integrated identity signal as a function of the coordinate measured perpendicular to the corresponding edge has a maximum. At this a mathematical model function is fitted. Results of these fits are x-coordinates of the first, second, third, fourth edges 16 . 18 . 26 . 28 and y-coordinates of the fifth, sixth, seventh and eighth edges 42 . 44 . 46 . 48 ,

each this x or y coordinates can be so with an accuracy of a few nm or better.

From the coordinates of the edges 16 . 18 . 26 . 28 . 42 . 44 . 46 . 48 may be the middle M _{1 of} the first edge 16 and the fourth edge 28 , the middle M _{2 of} the second edge 18 and the third edge 26 , the middle M _{3 of} the fifth edge 42 and the eighth edge 48 (not shown) and the center M _{4 of} the sixth edge 44 and the seventh edge 46 (not shown) are determined. As above using the 1 executed, also in the second embodiment, the distance of the center M ₁ and the center M _{2 is} a measure of the deviation of the critical dimension of its desired value. As a further measure of the deviation of the critical dimension from its desired value, the distance between the center M ₃ and the center M _{4 is obtained} . Both distances can be interpreted together (for example in the sense of an over- or under-exposure in lithography for structuring the layer with the test mark) or independently of one another.

3 is a schematic plan view of a test mark, as described above with reference to 2 was presented. In the 3 The test mark shown was produced in the same way, in particular, for example, with the aid of the same lithographic mask as that described in US Pat 2 shown. However, due to overexposure, underexposure or other inaccuracy or deviation of a parameter from its setpoint, the critical dimension does not have its setpoint. This has the consequent effect that the first edge 16 , the fourth edge 28 , the fifth edge 42 and the eighth edge 48 to the left or top and the second edge 18 , the third edge 26 , the sixth edge 44 and the seventh edge 46 are shifted to the right or down. Both thighs 141 . 142 the layer surface 14 are therefore wider and both thighs 241 . 242 the layer-free surface 24 are therefore narrower than in the representation in 2 , at 3 is, as with 2 , renounced the representation of a realistic rounding of corners in favor of greater clarity.

In the above based on the 2 shown evaluation results in the case of 3 represented situation, a distance D _{1 of} the center M ₁ between the first edge 16 and the fourth edge 28 and the middle M ₂ between the second edge 18 and the third edge 26 , Accordingly, there is a distance D _{2 of} the center M ₃ between the fifth edge 42 and the eighth edge 48 and the middle M ₄ between the sixth edge 44 and the seventh edge 46 (not shown).

The detection and evaluation of the test mark preferably take place by means of a positional displacement measuring device. This interprets the first edge 16 , the fourth edge 28 , the fifth edge 42 and the eighth edge 48 like the inner edges of a square recess in a layer created by the lithographic image of a first mask. The second edge 18 , the third edge 26 , the sixth edge 44 and the seventh edge 46 are interpreted by the positional displacement meter as the outer edges of a square area created by the lithographic image of a second mask.

At the in 3 illustrated situation, the positional displacement measuring device detects an offset of the first edge 16 , the fourth edge 28 , the fifth edge 42 and the eighth edge 48 certain square to the left above or an offset of the through the second edge 18 , the third edge 26 , the sixth edge 44 and the seventh edge 46 certain square down to the right. The attitude displacement measuring device generates and outputs a signal indicating that and how much the map of the second mask would be offset to the lower right of the first mask. This signal is interpreted as a measure of the deviation of the critical dimension from its setpoint.

4 is a schematic representation of a lithography mask 72 , an imaging device 74 and a chip 76 , The imaging device 74 forms the lithography mask 72 on the surface of the chip 76 from. This will create a layer on the surface of the chip 76 laterally structured. This lateral structure is permanently on the chip by subsequent development and / or etching steps or by steaming or sputtering and a lift-off step 76 transfer. The thus generated lateral structure of the layer on the surface of the chip 76 includes, inter alia, one or more test marks 78 as stated above on the basis of 1 to 3 have been described. The lithography mask contains this 72 a prototype 80 the test brand 78 ,

The relationship between the archetype 80 and the test brand 78 is due to the nature of the lithography mask 72 (For example, binary shadow mask or phase mask), the imaging device used 74 , the radiation used (light, electrons, ions, etc.) and the photosensitive layer used (photoresist, etc.) determined. If the test brand 78 is much larger than the wavelength used, the archetype 80 the test brand 78 be very similar. For example, if visible. Light is used and the above based on the 2 and 3 shown test mark has a size of 40 microns or more corresponds to the original image 80 (enlarged to scale) of the above based on the 2 illustrated shape of the test brand. The smaller the test mark in relation to the wavelength used, the more the shape or shape of the original image deviates 80 from the test brand 78 For example, to counteract the proximity effect and to prevent rounding of corners.

In general, by the in 4 described first a lateral structure and with this the test mark 78 in a photoresist or other layer, which is subsequently used as a mask for a further process step, for example for a wet or dry etching or a lift-off step. The basis of the 1 to 3 illustrated detection and evaluation of the test mark is preferably carried out already on the laterally structured, developed photoresist layer or other mask layer. If the critical dimension does not meet a given requirement, the photoresist layer or other mask layer may be removed and subsequently regenerated and laterally patterned. This will avoid the chip 76 permanently structured with the wrong critical dimension.

Alternatively, the test mark on the above based on the 1 to 3 shown manner and evaluated, if by the basis of the 4 described image generated lateral structure with the test mark permanently on the chip 76 is transferred. As a result, for example, at the end of a manufacturing process, a quality control.

The test structure 78 and their permanent transfer to the chip 76 preferably have no further electrical, electronic or mechanical function on the finished chip. In order to use as little chip area as possible, the test structure is preferably arranged in the region of a scribe frame on a wafer between two chips. In this case, the test mark on the finished chip is not or only partially available.

Ideally, the critical dimension on a finished chip has its setpoint or deviates slightly from it. The distance between the first edge 16 and the second edge 18 , the distance between the third edge 26 and the fourth edge 28 and, if necessary, the distance between the fifth edge 42 and the sixth edge 44 as well as the distance between the seventh edge 46 and the eighth edge 48 are equal or nearly equal in this case, with a small difference in the distances corresponding to a small deviation of the critical dimension from its desired value.

5 is a schematic flow diagram of a method. In a first step 102 becomes a laterally structured layer with a test mark 78 as stated above on the basis of 1 to 3 described was generated. In a second step 104 becomes the test brand 78 detected, for example light microscopy. In a third step 106 becomes a first center M ₁ between a first edge 16 and a fourth edge 28 certainly. In a fourth step 108 becomes a second center M ₂ between a second edge 18 and a third edge 26 certainly. In a fifth step 110 a first distance D ₁ between the first center M ₁ and the second center M _{2 is} determined. In a sixth step 112 becomes a third center M ₃ between a fifth edge 42 and an eighth edge 48 certainly. In a seventh step 114 becomes a fourth center M ₄ between a sixth edge 44 and a seventh edge 46 certainly. In an eighth step 116 a second distance D ₂ between the third center M ₃ and the fourth center M _{4 is} determined.

In a ninth step 118 it is checked whether the first distance D ₁ and the second distance D ₂ correspond to one or more predetermined requirements. If this is not the case, the lateral structured layer in a tenth step 120 removed and the first to eighth step 102 to 116 are repeated. When the first distance D ₁ and the second distance D ₂ correspond to the predetermined requirement, the lateral structure of the layer becomes an eleventh step 122 in or on the substrate 12 transfer.

It is obvious that for the method described above, other test marks can be used than those described above with reference to FIG 1 to 3 shown. Preferably, however, a test mark similar to a conventional positional offset test mark is used to enable detection and evaluation by a positional displacement measuring device.

10

laterally structured layer

12

substratum

14

layer surface

16

first edge

18

second edge

20

Area

22

Area

24

layer-free area

26

third edge

28

fourth edge

30

Area

32

Area

34

maximum

36

maximum

38

maximum

40

maximum

M ₁

first center

M ₂

second center

42

fifth edge

44

sixth edge

46

seventh edge

48

eighth edge

52

first measurement window

54

second measurement window

56

third measurement window

58

fourth measurement window

62

fifth measurement window

64

sixth measurement window

66

seventh measurement window

68

eighth measurement window

72

lithography mask

74

imaging device

76

chip

78

test mark

80

Prototype of the test brand 78

102

first step

104

second step

106

third step

108

fourth step

110

fifth step

112

sixth step

114

seventh step

116

eight step

118

ninth step

120

tenth step

122

eleventh step

141

first leg

142

second leg

241

third leg

242

fourth leg

Claims (7)

Method for determining a critical dimension of a laterally structured layer ( 10 ) on a substrate, comprising the following steps: a) generating ( 102 ) of the laterally structured layer ( 10 ) with a test mark ( 78 ) on the substrate ( 12 ) with a layer surface ( 14 ) having a first and a second edge ( 16 . 18 ), which face each other, and with a layer-free surface ( 24 ) with a third and a fourth edge ( 26 . 28 ), which face each other, wherein the layer surface ( 14 ) with the first and the second edge ( 16 . 18 ) to layer-free areas ( 20 . 22 ) of the substrate ( 12 ), whereby the layer-free surface ( 24 ) with the third and the fourth edge ( 26 . 28 ) to areas ( 30 . 32 ) in which the substrate ( 12 ) the layer ( 10 ), wherein the first, second, third and fourth edges ( 16 . 18 . 26 . 28 ) are arranged side by side and parallel to each other, wherein the first, second, third and fourth edge ( 16 . 18 . 26 . 28 ) form a group, wherein the first and fourth edges ( 16 . 28 ) outer edges of the group and the second and third edges ( 18 . 26 ) represent inner edges of the group; b) Capture ( 104 ) of the test mark ( 78 ); c) determining ( 106 ) a center (M ₁ ) between the first and the fourth edge ( 16 . 28 ); d) determining ( 108 ) a middle (M ₂ ) between the second and the third edge ( 18 . 26 ); and e) determining ( 110 ) of a distance (D ₁ ) of the center (M ₁ ) between the first and the fourth edge ( 16 . 28 ) and the middle (M ₂ ) between the second and the third edge ( 18 . 26 ) as a measure of the critical dimension. Method according to Claim 1, in which the test mark ( 78 ) in step a) ( 102 ) is generated so that the layer surface ( 14 ) further a fifth and a sixth edge ( 42 . 44 ), and the layer-free surface ( 24 ) further comprising a seventh and an eighth edge ( 46 . 48 ), wherein the layer surface ( 14 ) with the fifth and the sixth edge ( 42 . 44 ) to areas ( 20 . 22 ) of the substrate ( 12 ) in which the substrate ( 12 ) the layer ( 10 ), wherein the layer-free surface ( 24 ) with the seventh and eighth edges ( 46 . 48 ) to areas ( 30 . 32 ) of the substrate ( 12 ) in which the substrate ( 12 ) the layer ( 10 ), and wherein the fifth, sixth, seventh and eighth edges ( 42 . 44 . 46 . 48 ) parallel to each other and to the first, second, third and fourth edge ( 16 . 18 . 26 . 28 ) are arranged vertically, further comprising the following steps: f) determining ( 112 ) a middle (M ₃ ) between the fifth and the eighth edge ( 42 . 48 ); g) determining ( 114 ) of a middle (M ₄ ) between the sixth and the seventh edge ( 44 . 46 ); and h) determining ( 116 ) of a further distance (D ₂ ) of the center (M ₃ ) between the fifth and the eighth edge ( 42 . 48 ) and the middle (M ₄ ) between the sixth and the seventh edge ( 44 . 46 ) as a further measure of the critical dimension. The method of claim 1, further comprising the step of: i) removing ( 120 ) of the layer ( 10 ) and repeating steps a) ( 102 ), b) ( 104 ), c) ( 106 ), d) ( 108 ) and e) ( 110 ), if in step e) ( 110 ) certain distance does not correspond to a given requirement. The method of claim 2, further comprising the step of: i) removing ( 120 ) of the layer ( 10 ) and repeating steps a) ( 102 ), b) ( 104 ), c) ( 106 ), d) ( 108 ), e) ( 110 ), f) ( 112 ), g) ( 114 ) and h) ( 116 ), if in step e) ( 110 ) certain distance (D ₁ ) and in step h) ( 116 ) Certain further distance (D ₂ ) does not correspond to a given requirement. Method according to one of claims 1 to 4, wherein the steps b) ( 104 ), c) ( 106 ), d) ( 108 ), e) ( 110 ), f) ( 112 ), g) ( 114 ) and h) ( 116 ) are performed by a positional displacement measuring device. Method according to one of Claims 1 to 5, in which the test mark ( 78 ) in step a) ( 102 ) is arranged in the region of a Ritzrahmens. Method according to one of claims 1 to 6, further comprising the following step: j) transmitting ( 122 ) of the lateral structure of the layer ( 10 ) in the substrate ( 12 ).