DE102004051374A1 - Electroformed ion implantation structural material and method of making the structural material - Google Patents

Abstract

An electroformed ion implantation structural material is made of an electroformed body formed by electroforming, and has an ion implantation layer formed by implanting ions into the electroformed body. In the electroformed structural material, the microstructure is modulated at a position lower than the ion implantation layer, and the hardness becomes larger than that of the original electroformed body even at a position lower than the ion implantation layer.

Description

background the invention field of the invention

The The present invention relates to an electroformed ion implantation structural material and a method for producing the structural material, and more particularly an electroformed ion implantation structural material made from an electroformed body, wherein a portion which is deeper at the surface portion than an ion implantation layer having a higher hardness, and a method for the production of the structural material.

description of the prior art

The LIGA process is suitable for the production of high-precision metallic Microstructure body on a mass production base (LIGA is the abbreviation of lithography, electroforming, Impression). The LIGA method uses synchrotron radiation (SR), which is an x-ray with high directivity. Consequently, the LIGA procedure to do a deep lithograph. Specifically, this may be a structural body having a height of several one hundred microns with a precision in the order of magnitude of micrometers. In other words, this can be simple Way to produce a metallic microstructure body with high thickness. Furthermore, this has other special features. Therefore, get away from it assumed that the LIGA procedure covers a wide field of areas is applied.

The LIGA process is a processing technique, which lithography, Plating combined as electroforming and forming. In the LIGA process For example, a photoresist layer formed on a electrically conductive substrate, with SR through an absorbent mask (reticle) with a predetermined one Pattern irradiated. The lithograph forms a photoresist structural body (resin mold) according to the pattern the absorbent mask (mask pattern). Will metal in the opening of the Mask pattern deposited by electroforming, so can a metallic Microstructure body to be obtained. If this high-precision metallic microstructure body as Injection mold used, so can a microstructure molding made of synthetic resin by injection molding or similar getting produced. If microstructured shaped bodies obtained in this way are combined, so a micromachine can be made. The technique described above is described, for example, in a work by Manabu Yasui, Yasuo Hirabayashi and Hiroyuki Fujita (pp. 734-337, No. 11, Vol. 52, 2001, "Journal of the Surface Finishing Society of Japan ").

however In the LIGA method described above, this is by electroforming treatment metal to be produced is limited to the metal being placed can, such as nickel (Ni), iron (Fe), cobalt (Co) and a Ni-Fe alloy. Is a greater hardness or a higher strength required, so was a material of high hardness, such as a Ni-manganese alloy (Ni-Mn alloy) or a Ni-tungsten alloy (Ni-W alloy) sometimes used in this case, however for the Control of the plating solution and similar a sophisticated technique is required. This requirement limits the relevant Scope of application.

Further can, if respect a microstructure element the wear resistance is required the surface thereof be provided with a hard layer, which is formed by a process such as plating, physical Deposition from the gas phase (PVD) or chemical deposition the gas phase (CVD). In this case, however, the way achieving a sufficient bond strength between the element body and Furthermore, it can be more complicated Form to be difficult, a coating on a shaded section at the time of deposition from the gas phase and in a minor or form an exact concave-like section.

On the other hand may be in a case where electroforming is carried out using a molten salt instead of an aqueous solution as Galvanoformungsbad, this process a very hard galvanoforming body made of chrome (Cr), titanium (Ti), molybdenum (Mo) or the like compared to the conventional one to produce Ni-based alloy. However, the molten salt, which is applicable to electroforming using the metals described above, limited to a temperature of 250 ° C or more. Consequently, lithography deforms using the ordinary Photoresist the photoresist due to the heat, making it useless becomes. Furthermore, molten salts are extremely moisture-absorbing and chemically reactive. The properties are limitations such as the requirement of electroforming in one To perform noble gas environment.

in view of the circumstances described above has been calling for the industry for some time the development of an electroformed structural material, which by a common one Process formed and simply improved in terms of strength and the development of a manufacturing process of the structural material.

Summary the invention

It An object of the present invention is an electroformed Ion implantation structural material, which in a simple way can improve the strength of an electroformed body, as well to provide a method for producing the structural material.

According to the invention above Task solved by the creation of the following electroformed ion implantation structural material. The Electroplated ion implantation structure material consists of an electroformed Body, which is formed by electroforming. The electroformed Structural material has an ion implantation layer which formed by implanting accelerated ions into the electroformed body becomes.

at the galvano-formed structural material becomes an ion implantation layer formed with high strength at the surface portion, and a modulated structure of finer structure becomes at one position formed deeper than the ion implantation layer. Consequently, can the strength can be improved at the surface portion and a portion deeper as the surface section.

According to one Aspect of the present invention provides the present invention the following process for producing an electroformed Ion implantation structural material. The method comprises (a) a step of forming an electroformed body and (b) a step of implanting accelerated ions into the electroformed body. The combination of the above steps allows the formation of a modulated structure with a finer structure at a position lower than the ion implantation layer at the surface portion.

According to the invention, when the electroformed ion implantation structural material and the Method of producing the structural material can be used the life of an electroformed structural material is light be improved. Therefore, you can the structural material and method are used for electroformed structural materials in general, which have been subjected to a forging process so far needed to improve the strength, as well as for tiny electroformed Structural materials for Micromachines. Consequently, it is assumed that the by the present invention has developed a wide bandwidth technology of applications, including the elimination of the forging process and other unknown applications.

Short description the drawing

It shows:

1 Fig. 12 is a diagram explaining the process for producing the electroformed ion implantation structural material which is an embodiment of the present invention;

2 FIG. 4 is a graph illustrating a depth-wise distribution of the hardness of the electroformed ion implantation structural material of the present invention; FIG.

3 a schematic diagram illustrating the microstructure of the material after an electroforming;

4 a schematic diagram illustrating the microstructure of a galvano-formed body after ion implantation;

5 Fig. 11 is a view illustrating a photograph of a focused ion beam (FIB photograph) taken at a position at a depth of 40 μm with respect to the surface of an electroformed material;

6 a line drawing showing the microstructure of section "A" shown in FIG 5 , represents;

7 Fig. 11 is a view showing an FIB photograph taken at a position at a depth of 40 μm with respect to the surface of the electroformed body after ion implantation;

8th a line drawing showing the microstructure of section "A" shown in FIG 7 , represents.

Precise description the invention

The inventors of the present invention have come to a phenomenon that when ions are implanted into an electroformed body, the implantation increases the hardness at a portion beyond the range of the ions. However, the principle of generating this phenomenon remains to be clarified. The inventors of the present invention studied extensive literature, but could not confirm that the phenomenon described above would be published. Nevertheless, experiments carried out under variation of experimental conditions confirmed the reproducibility of the phenomenon. Embodiments of the present invention Invention will be explained below with reference to the drawings. 1 Fig. 12 is a diagram explaining the method of manufacturing the electroformed ion implantation structural material in an embodiment of the invention. An electroformed body 1 is on a metallic substrate 3 formed according to the pattern of a (not shown) support layer. ions 2 are driven into the electroformed body at an acceleration voltage of 10 kV or more, so that they are implanted. This ion implantation increases the hardness at a section deeper than that in 2 illustrated ion implantation layer. The increase in hardness compared to an untreated body is in most cases 30% and in some cases 50%. This increase is remarkable. The ion implantation layer is formed in a region of 5 μm or less depth. 2 does not indicate the hardness in the region of the ion implantation layer.

3 Figure 3 is a schematic diagram illustrating the microstructure of an electroformed body. It is possible to achieve a fine structure even in a galvano-molded body. More specifically, when electroforming is performed by applying a pulse voltage across the electrodes in the electroforming bath to provide a pulsed current, the density of nucleation sites for deposition increases at the time of deposition of the electroformed body from the electroforming solution. As a result, a galvano-molded body having a finer structure can be obtained. The schematic diagram in 3 shows an electroformed body with such a fine structure. In the case of an electroformed body, the crystal grows continuously from the surface of the electrode. Consequently, stalk crystals which are long in the growth direction, which is typical of a cast metal, sometimes form. Sometimes equiaxed crystals form without alignment. The schematic diagram in 3 can be interpreted as a diagram representing either the equiaxed crystals or the cross section of the stalk crystals. In the case of the stem crystals, the average grain diameter is a grain diameter measured in a longitudinal section.

There are cavities 4 (also known as cavities or pores), which are typical of the electroformed body, between fine crystal grains 5 in the in 3 illustrated crystal structure. On the other hand shows 4 a modulated structure having a finer structure at a portion lower than the ion implantation layer. As in 4 are shown, the crystal grains 5 finer than the crystal grains in electroforming. Accordingly, it seems that the cavities 4 get smaller. The defects (defects), such as voids, seem to be partly consumed in the increase of the grain boundaries, which is a kind of defect (defect), as the crystal grains become finer. However, as described above, this is probably a phenomenon that has been noted for the first time in the extremely long history of bulk metal material. Therefore, the inventors of the present invention refrain from making clear statements. The above description is to be understood merely as a description of the fact established by the inventors of the present invention.

5 Fig. 13 is a view illustrating a photograph of a focused ion beam (FIB photograph) of an electroformed body. 6 is a line drawing showing the structure of section "A" shown in 5 , represents. The electroformed body is formed as stalk crystals, with the stalk crystals having an average grain diameter of less than 1 μm. Although the electroformed body has cavities, these are in 5 not apparent due to insufficient magnification.

7 FIG. 13 is a view illustrating an FIB photograph illustrating the structure after ion implantation from the surface side of the above-described electroformed body. FIG. 8th is a line drawing showing the section "A" corresponding to the section "A" shown in FIG 5 , represents. The comparison of line drawings in 6 and 8th shows that the structure is modulated and becomes finer with respect to the surface at a portion inside at a distance of 40 μm, that is, the ions do not reach the inside. How out 8th As can be seen, the modulation type seems to be affected by the original stem crystals. More specifically, the structure appears to get finer with retention of somewhat narrower shapes along the longitudinal axis of the stalk crystals. The degree of refinement is remarkable, and the average crystal grain diameter seems to be much smaller than 0.5μm.

As described above, it is likely that the above described Increase in hardness can be achieved by forming the modulated structure, which has a finer structure, at a section deeper than the Ion implantation layer.

embodiment

Plating (electroforming) became 100 For 5 minutes at a temperature of 55 ° C. at a current of 5A with the following composition of a plating bath (Galvanoform bath) and using a nickel plate with a size of 10 cm ² as the cathode and nickel as the anode:

{Plating bath}

• Nickel sulfamate: 300 g / l (g / dm ³ )
• Manganese sulfamate: 40 g / l
• First brightener (sodium saccharic acid): suitable amount
• Second brightener (butynediol): suitable amount
• Wetting agent (sodium laureth sulfate): suitable amount

Subsequently, a 2cm ² segment was cut from the central portion of the pattern (electroformed body). The segment was halved so that each half had a width of 1cm. One half was used as the pattern (1) for measuring hardness and crystal grain diameter. The other half was used as pattern (2) for ion implantation.

The hardness was measured by the following method. The pattern ( 1 ) was vertically embedded in epoxy resin so that the cross-section with the surface of the resin could be at the same level. The cross section was polished with abrasive by successively varying the particle size of the abrasive grain to the grain size number 4000. Subsequently, the cross section was treated by polishing to obtain a mirror finish. The hardness was measured at a position at a distance of 25 μm with respect to the plated surface of the sample with a Vickers hardness tester. Ten measurements were taken to obtain the average value. The crystal grain diameter was measured by X-ray diffraction.

The Pattern (2) (electroformed body) was an omnidirectional ion implantation under the following conditions subject:

{Conditions of omnidirectional Ion implantation}

• Voltage: 30kV
• Type of implanted ion: carbon (C)
• Pulse frequency: 150kHz
• Treatment time: 60 minutes
• Extreme degree of vacuum: 6.7 × 10 ^-4 Pa or less
• Temperature: Substrate holder was cooled with a coolant at 25 ° C

To The ion implantation became the Vickers hardness and the crystal grain diameter as measured in sample (1).

(Measurement results)

template (1) had a Vickers hardness, Hv, from 439 upwards as well as crystal grain diameter of 10-1000nm. An observation by means of scanning ion microscopy (SIM) after a FIB treatment confirmed that it's tiny cavities in the order of magnitude of nanometers.

On the other hand The galvano-formed ion implantation structural material showed increased Vickers hardness, Hv, of 511 at a position lower than the ion implantation layer. The crystal grain diameter decreased to the range of 5-250nm the same position. The observation by SIM after FIB treatment revealed that the cavities found in pattern (1) are smaller were and their density decreased significantly.

• (1) Bei dem oben beschriebenen galvanogeformten Ionenimplantations-Strukturmaterial kann eine Ionenimplantationsschicht in dem Oberflächenabschnitt, welcher von der Oberfläche bis zu einer Tiefe von maximal 5μm reicht, gebildet werden, und eine Struktur, bei welcher die Mikrostruktur moduliert wird, kann an einer Position tiefer als die Ionenimplantationsschicht gebildet werden. Die oben beschriebene Struktur, bei welcher die Mikrostruktur eines galvanogeformten Körpers moduliert wird, meint eine Struktur, bei welcher die galvanogeformte Mikrostruktur derart transformiert wird, dass Kristallkörner, welcher feiner sind als die Kristallkörner bei Galvanoformung, den Hauptabschnitt ausmachen. Diese Struktur ermöglicht die Herstellung eines winzigen Strukturmaterials mit exzellenter Lebensdauer. Soll die Ionenimplantation eine Tiefe von mehr als 5μm ausgehend von der Oberfläche erreichen, so ist ein äußerst groß dimensionierter Beschleuniger erforderlich. Dieses System weicht von dem Gegenstand der vorliegenden Erfindung ab, welcher darin besteht, die Festigkeit einfach zu erhöhen. Die Modulation der Mikrostruktur kann an einer Querschnittsmittenposition erfolgen, tief im Inneren ausgehend von der Oberfläche des galvanogeformten Strukturmaterials. Wie oben beschrieben, sind der Grund, warum die oben beschriebene modulierte Struktur durch Ionenimplantation erzeugt wird, die Tiefe, in welcher die modulierte Struktur ausgehend von der Oberfläche gebildet wird usw., noch zu klären. Nichts desto trotz wird die modulierte Struktur über die gesamte Dicke eines galvanogeformten Strukturmaterials mit einer Dicke von 80μm oder so gebildet. Sobald die modulierte Struktur gebildet ist, kann diese im gesamten Querschnitt gebildet werden. Anders ausgedrückt, die tiefenweise Verteilung der modulierten Struktur kann nicht bzw. darf nicht gesteuert werden. Wird jedoch die modulierte Struktur feinerer Struktur zumindest an der Querschnittsmittenposition gebildet, so ist diese Struktur äußerst nützlich für die Verbesserung der Lebensdauer des galvanogeformten Strukturmaterials.
• (2) Erfindungsgemäß kann der Abschnitt, an welchem die oben beschriebene Modulation der Mikrostruktur erfolgt, einen durchschnittlichen Kristallkorndurchmesser von maximal 0,5μm aufweisen. Die Bildung der modulierten Struktur feinerer Struktur kann die Festigkeit verbessern. Wie in 5 bis 8 dargestellt, behält, wenn die Struktur des galvanogeformten Körpers, welcher eine Stängelkristallstruktur aufweist, moduliert wird, der Stängelkristall die Form des Stängelkristalls bei, während dieser feiner wird. Bei den Stängelkristallen handelt es sich bei dem durchschnittlichen Kristallkorndurchmesser um einen durchschnittlichen Korndurchmesser in einem Schnitt parallel zur Wachstumsrichtung der Stängelkristalle. Wie oben beschrieben, kann erfindungsgemäß die Modulation der Mikrostruktur und die Verringerung des durchschnittlichen Kristallkorndurchmessers an einer Position tiefer als die Ionenimplantationsschicht bewirken, dass der Abschnitt, an welchem die Mikrostruktur moduliert wird, eine Härte aufweist, welche größer ist als diejenige des galvanogeformten Körpers zum Zeitpunkt der Bildung davon mittels Galvanoformung.
• (3) Der galvanogeformte Körper, gebildet mittels Galvanoformung, ist ein Material, in welches Ionen zu implantieren sind. Weist der galvanogeformte Körper selbst eine feine Struktur auf, so ist es einfach, die modulierte Struktur an einem inneren Abschnitt mittels Ionenimplantation herzustellen. Die modulierte Struktur, welche mittels Ionenimplantation hergestellt wird, weist eine feinere Struktur und eine höhere Festigkeit als bei dem galvanogeformten Körper auf. Es ist erwünscht, dass der galvanogeformte Körper, gebildet mittels Galvanoformung, einen durchschnittlichen Kristallkorndurchmesser von maximal 1μm aufweist. Im Falle der Stängelkristalle handelt es sich bei dem durchschnittlichen Korndurchmesser um den Durchschnittswert der Korndurchmesser im Längsschnitt der Stängelkristalle. Obige Anforderung kann erfüllt werden mittels Anwenden einer impulsförmigen Spannung zum Zeitpunkt der Galvanoformung. Die Anwendung der impulsartigen Spannung bzw. die Lieferung des impulsartigen Stroms kann den Grad der Übersättigung zum Zeitpunkt der Abscheidung aus der Lösung erhöhen. Dieser Anstieg kann die Dichte der Keimentwicklung, welche bewirkt, dass der galvanogeformte Körper eine feinere Struktur aufweist, erhöhen. Dieser Vorgang vereinfacht die Bildung der modulierten Struktur feinerer Struktur an einer Position tiefer als die Ionenimplantationsschicht bei Ionenimplantation.
• (4) Bei dem Schritt der Ionenimplantation kann die Ionenimplantation in einem Bereich ausgehend von der Oberfläche hin zu einer Tiefe von maximal 5μm die Härte eines Abschnitts tiefer als der Bereich erhöhen. Anders ausgedrückt, kann, da die modulierte Struktur feinerer Struktur an einer Position tiefer als die Ionenimplantationsschicht gebildet werden kann, der innere Abschnitt jenseits der Reichweite der Ionen eine höhere Festigkeit aufweisen. Bei dem oben beschriebenen Schritt der Ionenimplantation kann die Ionenimplantation in einem Bereich, welcher von der Oberfläche hin zu einer Tiefe von maximal 5μm reicht, die Struktur eines Abschnitts tiefer als der Bereich modulieren. Gemäß diesem Verfahren kann, selbst wenn die Ionenimplantationsschicht in einem Bereich gebildet wird, welcher von der Oberfläche bis zu einer Tiefe von maximal 5μm reicht, der Abschnitt an einer Tiefe von beispielsweise 40μm ausgehend von der Oberfläche eine modulierte Struktur feinerer Struktur aufweisen.
• (5) Bei dem Schritt der Ionenimplantation kann die Temperatur des galvanogeformten Körpers bei maximal einem Drittel des Schmelzpunkts (ausgedrückt durch K) des Materials, welches den galvanogeformten Körper bildet, erhalten werden. Diese Bedingung hält den verringerten Durchmesser der individuellen Kristallkörner in der modulierten Struktur feinerer Struktur aufrecht, so dass ein Gröberwerden der feinen Körner durch Wachstum verhindert werden kann.
• (6) Bei dem Schritt der Ionenimplantation ist es erwünscht, dass die Ionen bei einer Spannung von mindestens 10kV beschleunigt werden. Beträgt die Beschleunigungsspannung weniger als 10kV, so können die Ionen nicht ausreichend implantiert werden, so dass es schwierig ist, wenn nicht unmöglich, die modulierte Struktur feinerer Struktur im Inneren zu bilden.
• (7) Bei dem Schritt der Ionenimplantation ist es erwünscht, eine omnidirektionale Plasma-Ionenimplantationseinheit zu verwenden. Diese Einheit kann die Ionenimplantationsschicht einheitlich an der gesamten Oberfläche bilden, ohne schattierte Abschnitte bzw. Schattenabschnitte zu bilden, selbst bei einem galvanogeformten Körper komplizierter Form. Folglich kann die modulierte Struktur feiner Struktur vollständig an einer Position tiefer als die Ionenimplantationsschicht gebildet werden.
• (8) Es ist erwünscht, dass der galvanogeformte Körper aus einem Material besteht, welches ausgewählt wird aus der Gruppe aus Ni, Fe, Kupfer (Cu), Zink (Zn), Zinn (Sn), Mn, Co, Silber (Ag), Gold (Au) sowie Legierungen daraus. Eine Ionenimplantationsbehandlung des galvanogeformten Körpers, bestehend aus obenstehendem Material, kann ein galvanogeformtes Ionenimplantations-Strukturmaterial mit exzellenter Lebensdauer bzw. Beständigkeit herstellen.
• (9) Bei obigem Ausführungsbeispiel wurde in Kohlenstoff-Ion (C-Ion) als in den galvanogeformten Körper zu implantierendes Ion verwendet. Nichts desto trotz können andere Ionen verwendet werden. Beispielsweise kann ein Stickstoff-Ion (N-Ion) verwendet werden. Das Ion kann entweder ein atomares Ion bzw. ein molekulares Ion sein. Selbstverständlich können andere Ionen als das Kohlenstoff-Ion und Stickstoff-Ion verwendet werden.

The findings obtained by other embodiments of the present invention as well as the embodiment described above will be explained in succession below.

• (1) In the above-described electroformed ion implantation structural material, an ion implantation layer may be formed in the surface portion ranging from the surface to a depth of at most 5 μm, and a structure in which the microstructure is modulated may become deeper at a position as the ion implantation layer are formed. The structure described above, in which the microstructure of an electroformed body is modulated, means a structure in which the electroformed microstructure is transformed such that crystal grains finer than the electroformed crystal grains constitute the main portion. This structure allows the production of a minute structural material with excellent durability. If the ion implantation is to reach a depth of more than 5 μm from the surface, an extremely large-sized accelerator is required. This system deviates from the subject of the present invention, which is simply to increase the strength. The modulation of the microstructure may be at a cross-sectional mid-position, deep inside, from the surface of the electroformed structural material. As described above, the reason why the modulated structure described above is generated by ion implantation is still to clarify the depth at which the modulated structure is formed from the surface, and so on. Nevertheless, the modulated structure is formed over the entire thickness of an electroformed structural material having a thickness of 80 μm or so. Once the modulated structure is formed, this can be formed in the entire cross-section who the. In other words, the depth distribution of the modulated structure can not or must not be controlled. However, when the modulated structure of finer structure is formed at least at the cross-sectional center position, this structure is extremely useful for improving the life of the electroformed structural material.
• (2) According to the invention, the portion where the above-described modulation of the microstructure is made may have an average crystal grain diameter of 0.5 μm or less. The formation of the modulated structure of finer structure can improve the strength. As in 5 to 8th As shown, when the structure of the electroformed body having a stem crystal structure is modulated, the stem crystal retains the shape of the stem crystal as it becomes finer. In the stalk crystals, the average crystal grain diameter is an average grain diameter in a section parallel to the growth direction of the stalk crystals. As described above, according to the present invention, the modulation of the microstructure and the reduction of the average crystal grain diameter at a position lower than the ion implantation layer can cause the portion where the microstructure is modulated to have a hardness greater than that of the electroformed body at the time the formation of it by electroforming.
• (3) The electroformed body formed by electroforming is a material into which ions are to be implanted. If the electroformed body itself has a fine structure, then it is easy to fabricate the modulated structure at an inner portion by ion implantation. The modulated structure produced by ion implantation has a finer structure and higher strength than the electroformed body. It is desirable that the electroformed body formed by electroforming has an average crystal grain diameter of at most 1 μm. In the case of the stalk crystals, the average grain diameter is the average value of the grain diameter in the longitudinal section of the stalk crystals. The above requirement can be met by applying a pulse voltage at the time of electroforming. The application of the pulse-like current or the supply of the pulse-like current can increase the degree of supersaturation at the time of deposition from the solution. This increase can increase the density of the seed coil which causes the electroformed body to have a finer structure. This process simplifies formation of the finer structure modulated structure at a position lower than the ion implantation layer upon ion implantation.
• (4) In the step of ion implantation, ion implantation in a region from the surface to a depth of at most 5 μm may increase the hardness of a portion deeper than the region. In other words, since the modulated structure of finer structure can be formed at a position lower than the ion implantation layer, the inner portion beyond the reach of the ions can have higher strength. In the ion implantation step described above, ion implantation in a region extending from the surface to a depth of at most 5 μm may modulate the structure of a portion deeper than the region. According to this method, even if the ion implantation layer is formed in a region ranging from the surface to a depth of at most 5 μm, the section may have a modulated structure of finer structure at a depth of, for example, 40 μm from the surface.
• (5) In the step of ion implantation, the temperature of the electroformed body can be obtained at a maximum of one third of the melting point (expressed by K) of the material forming the electroformed body. This condition maintains the reduced diameter of the individual crystal grains in the modulated structure of finer structure, so that coarsening of the fine grains by growth can be prevented.
• (6) In the step of ion implantation, it is desirable that the ions are accelerated at a voltage of at least 10kV. If the acceleration voltage is less than 10 kV, the ions can not be sufficiently implanted, so that it is difficult, if not impossible, to form the modulated structure of finer structure in the interior.
• (7) In the step of ion implantation, it is desirable to use an omnidirectional plasma ion implantation unit. This unit can uniformly form the ion implantation layer on the entire surface without forming shaded portions, even in a galvano-formed body of a complicated shape. Consequently, the fine structure modulated structure can be formed completely at a position lower than the ion implantation layer.
• (8) It is desirable that the electroformed body be made of a material selected from the group consisting of Ni, Fe, copper (Cu), zinc (Zn), tin (Sn), Mn, Co, silver (Ag) , Gold (Au) and alloys thereof. An ion implantation treatment of the electroformed body, consisting of the above material, can produce an electroformed ion implantation structural material with excellent durability.
• (9) In the above embodiment, an ion to be implanted in carbon ion (C-ion) was used as the electroformed body. Nevertheless, other ions can be used. For example, a nitrogen ion (N-ion) may be used. The ion can be either an atomic ion or a molecular ion. Of course, other ions than the carbon ion and nitrogen ion can be used.

In the above, are exemplary embodiments of the present invention. The embodiments described above The present invention is for illustrative purposes only. The scope of the present invention is defined by those described above embodiments not limited by the present invention. The scope of protection of Present invention is by the description of the scope the accompanying claims explained. Furthermore, the present invention is intended to all To cover variations, which in the meaning or the essence and are included in the scope of protection, which correspond to the scope of the claims.

Claims (14)

Electroplated ion implantation structural material from an electroformed body, formed by electroforming, wherein the electroformed ion implantation structural material having an ion implantation layer formed by implantation is formed by ions in the electroformed body. Electroplated ion implantation structural material according to claim 1, wherein: (1) the ion implantation layer in FIG a surface section formed from the surface of the electroformed ion implantation structural material to a maximum depth of 5μm; and (2) the microstructure of the electroformed ion implantation structural material is modulated at a position lower than the ion implantation layer. Electroplated ion implantation structural material according to claim 2, wherein the microstructure is at a cross-sectional center position deep inside the surface is modulated. Electroplated ion implantation structural material according to claim 2 or 3, wherein the portion at which the microstructure is modulated, an average crystal grain diameter of maximum 0.5μm having. Electroplated ion implantation structural material according to one of the claims 2 to 4, wherein the portion where the microstructure modulates becomes, a hardness which is larger as that of the galvano-formed body, which for electroforming is formed. Electroplated ion implantation structural material according to claim 1, wherein the electroformed body, formed by electroforming, has an average crystal grain diameter of a maximum of 1 micron. Process for the preparation of an electroformed Ion implantation structural material, the method being as follows Steps includes: (a) forming an electroformed body; and (B) Implant accelerated ions into the electroformed body. Process for the preparation of an electroformed An ion implantation structural material according to claim 7, wherein in the step of forming an electroformed body, the electroformed body such is formed, that this an average crystal grain diameter of a maximum of 1μm having. Process for the preparation of an electroformed An ion implantation structural material according to claim 7 or 8, wherein in the step of forming an electroformed body pulsed voltage is applied. Process for the preparation of an electroformed An ion implantation structural material according to any one of claims 7 to 9, wherein at the step of implanting ions into the electroformed body the ions are implanted in a region which extends from the surface to to a depth of maximum 5μm ranges to the hardness a section deeper than the area to increase. Process for the preparation of an electroformed An ion implantation structural material according to any one of claims 7 to 10, wherein at the step of implanting ions into the electroformed body the ions are implanted in a region which extends from the surface to to a depth of maximum 5μm ranges to the structure of a section deeper than the area to modulate. A method of manufacturing an electroformed ion implantation structural material according to any one of claims 7 to 11, wherein in the step of implanting ions into the electroformed body, the temperature of the electroformed Body at a maximum of one third of the melting point (expressed by K) of the material forming the electroformed body. Process for the preparation of an electroformed An ion implantation structural material according to any one of claims 7 to 12, wherein at the step of implanting ions into the electroformed Body the Ions are accelerated at a voltage of at least 10kV. Process for the preparation of an electroformed An ion implantation structural material according to any one of claims 7 to 13, wherein at the step of implanting ions into the electroformed body used an omnidirectional plasma ion implantation unit becomes.