DE102004016313A1 - Method and equipment for manufacturing individual solar cells from flexible metal band, previously coated with solar cell layer, with edge regions separated in band longitudinal direction by slitting and cut positions of band by double slit - Google Patents
Method and equipment for manufacturing individual solar cells from flexible metal band, previously coated with solar cell layer, with edge regions separated in band longitudinal direction by slitting and cut positions of band by double slit Download PDFInfo
- Publication number
- DE102004016313A1 DE102004016313A1 DE200410016313 DE102004016313A DE102004016313A1 DE 102004016313 A1 DE102004016313 A1 DE 102004016313A1 DE 200410016313 DE200410016313 DE 200410016313 DE 102004016313 A DE102004016313 A DE 102004016313A DE 102004016313 A1 DE102004016313 A1 DE 102004016313A1
- Authority
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- Germany
- Prior art keywords
- band
- longitudinal direction
- slitting
- solar cell
- edge regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 238000007689 inspection Methods 0.000 claims 2
- 238000003698 laser cutting Methods 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 26
- 238000000926 separation method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000000678 band cell Anatomy 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical compound [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 210000003168 insulating cell Anatomy 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
In jüngster Zeit werden vermehrt Anstrengungen gemacht, die Herstellungskosten von Dünnschicht-Solarzellen zu reduzieren, indem durchlaufende Bandverfahren („roll-to-roll-process") Einsatz finden. Besondere Beachtung verdient der Vorschlag, eine Chalcopyrit-Halbleiterschicht auf einem flexiblen Band aus Metall abzuscheiden. Hierbei wird auf das elektrisch leitfähige Substrat-Band zunächst der sogenannte precursor, d.h. die Elemente Kupfer, Indium, Selen und/oder Schwefel bzw. deren Legierungen (Kupferselenid, Indiumselenid) aufgebracht. Nach einer RTP-Behandlung („rapid thermal process"), die zur Bildung des Verbindungshalbleiters („absorber") führt, erfolgt eine Tauchdotierung (CdS-CBD, Cadmiumsulfid – „chemical bath deposition"). Nachfolgend wird eine transparente, jedoch elektrisch gut leitende „Fensterschicht" aufgebracht, beispielsweise Zinkoxid und Aluminium- oder Gallium-dotiertes Zinkoxid. Während die precursor-Abscheidung gelegentlich schon elektrochemisch, d.h. als Non-Vakuum-Prozess erfolgt, ist die Deposition der Fensterschicht in aller Regel ein PVD- oder CVD-prozess („physical/chemical vapor deposition").In recently, Time, efforts are increasingly made, the production costs of thin-film solar cells be reduced by using roll-to-roll-process. Of particular note is the proposal, a chalcopyrite semiconductor layer to deposit on a flexible band of metal. This will be on the electrically conductive Substrate tape first the so-called precursors, i. the elements copper, indium, selenium and / or Sulfur or their alloys (copper selenide, indium selenide) applied. To an RTP treatment ("rapid thermal process "), which leads to the formation of the compound semiconductor ("absorber"), an immersion doping (CdS-CBD, cadmium sulfide - "chemical bath deposition "). Subsequently, a transparent, but highly electrically conductive "window layer" is applied, for example Zinc oxide and aluminum or gallium doped zinc oxide. While the precursor deposition occasionally already electrochemical, i. as a non-vacuum process is done, the deposition of the window layer is usually a PVD or CVD process ("physical / chemical vapor deposition ").
Es
entstehen nun bei der quasi endlosen, ununterbrochenen Abscheidung
einer photoelektrisch aktiven Halbleiterschicht auf flexiblem Metallband, neben
den ersichtlichen Vorteilen, auch zwei Probleme, die ernst genommen
werden müssen,
wenn die Solarzellen einen guten Wirkungsgrad und eine hohe Alterungsbeständigkeit
(geringe „degradation") haben sollen:
Zum
einen besteht an den Rändern
des Bandes die Gefahr von Kurzschlüssen, indem entweder mikroskopisch
kleine Metallspäne
der Schnittkante eine elektrisch leitende Verbindung zwischen Rückkontakt/Substrat
und Fensterschicht bilden oder indem die Fensterschicht über den
precursor hinausreicht und mit der Rückkontaktschicht (meist Molybdän) oder
der Schnittkante des metallischen Trägerbandes einen Kurzschluss
herstellt.
Zum andern, indem beim Zerschneiden des endlosen
Bandes in einzelne Zellen durch den Schnittvorgang ein Kurzschluss
zwischen Fensterschicht und dem Rückkontakt/Trägerband
entsteht, entweder sofort oder, was noch abträglicher ist, langsam durch Veränderungen
der undefinierten Struktur der „offenen" Schnittkante.Now arise in the quasi endless, continuous deposition of a photoelectrically active semiconductor layer on flexible metal strip, in addition to the apparent advantages, also two problems that must be taken seriously when the solar cells have good efficiency and high resistance to aging (low "degradation") should:
On the one hand there is a risk of short circuits at the edges of the band by either microscopically small metal chips of the cut edge form an electrically conductive connection between the back contact / substrate and window layer or by the window layer extends beyond the precursor and with the back contact layer (usually molybdenum) or the cutting edge the metallic carrier tape makes a short circuit.
On the other hand, when cutting the endless belt into individual cells by the cutting process, a short circuit between the window layer and the back contact / carrier tape is created, either immediately or, what is even more detrimental, slowly by changes in the undefined structure of the "open" cut edge.
Diese Probleme wurden zunächst teilweise nicht erkannt; beispielsweise wird in DE ... hervorgehoben, dass ein durchgehend beschichtetes Band zu hoher Fiexibilität führt, indem Zellen in beliebiger Länge abgeschnitten werden können. Von speziellen Maßnahmen an den Schnittstellen des Bandes ist keine Rede.These Problems were initially partially unrecognized; for example, in DE ... highlighted, that a continuously coated band leads to high flexibility by Cells of any length can be cut off. Of special measures at the interfaces of the tape is no question.
Auch
Vorkehrungen zur Separation der Bandkante wurden zunächst nicht
für nötig erachtet (
Lediglich
die Schutzrechtsanmeldung
Letztgenannte Maßnahme zur Separation von Einzelzellen auf einem durchgehend solar beschichteten Band durch screen-printing einer ca. 3–5 μm dicken Isolierschicht auf dem Trägermaterial/Substrat stellt sicherlich einen vorteilhaften Lösungsversuch dar, ist jedoch noch mit einigen Nachteilen behaftet:
- – Die Zerteilung des Bandes kann nur an den vorgesehenen Stellen erfolgen, d.h. eine Änderung der Zellenlänge ist nachträglich nicht möglich
- – eine Optimierung des yield (der Ausbeute) durch Herausschneiden tediglich der fehlerbehafteten Bandbereiche ist nicht möglich
- – der Kantenschutz soll definitionsgemäss die Bandkante isolierend abdecken; diese wird jedoch beim bandgalvanischen Prozess zur Stromeinspeisung benötigt, insbesondere dann, wenn 2 Bänder "Rücken zu Rücken" geführt werden, wodurch auch die Band-Rückseite für die Stromzufuhr entfällt. Die empfindliche, zu beschichtende Band-Vorderseite kann hierfür ohnehin nicht herangezogen werden.
- – das Siebdrucken eines Sol/Gel-Systems, mit anschließendem Tempern, stellt einen vielleicht nicht beträchtlichen, aber spürbaren Mehr-Aufwand dar.
- - The division of the band can only be done at the designated places, ie a change in the cell length is not possible later
- - Optimization of the yield (yield) by cutting out only the faulty band areas is not possible
- - The edge protection is intended to cover the band edge insulating; However, this is needed in the band galvanic process for power supply, especially when 2 bands "back to back" are performed, which also eliminates the back of the band for the power supply. The sensitive tape front to be coated can not be used for this anyway.
- Screen-printing a sol / gel system, followed by tempering, may not be a considerable but noticeable added expense.
Für die Separation von Dünnschicht Solarzellen auf Glas ist es üblich, mechanische Verfahren (Ritzen = scribing) einzusetzen. Bei Solarzellen, die durch Deposition auf flexiblem Material entstanden sind, ist das mechanische Ritzen weniger geeignet: im Gegensatz zu Glas geben flexible Trägermaterialien dem Druck der Ritznadel nach und haben eine weniger ebenmäßige Oberfläche, sodass das mechanische Ritzen mit größeren Problemen behaftet ist.For the separation of thin film Solar cells on glass it is common to use mechanical methods (scribing). For solar cells, which are created by deposition on flexible material is the mechanical scribing less suitable: unlike glass give flexible carrier materials The pressure of the scoring needle and have a less even surface, so the mechanical scribing with bigger problems is afflicted.
Auch Laser-Ritzen entspricht an sich dem Stand der Technik bei der Separation von Dünnschicht-Zelten bei der Abscheidung auf Glas. Es ist jedoch weder bekannt noch naheliegend, diese Technologie für die Abtrennung der Randbereiche oder Schnittkanten von Dünnschicht-Zellen auf einem flexiblen Band einzusetzen: einerseits soll nicht, wie dies bei den Dünnschicht Modulen aus Glas der Fall ist, eine integrierte Verschaltung der Einzelzellen hergestellt werden, sondern es sollen potentiell fehlerhafte Bereiche, die den Wirkungsgrad der Gesamtzelle beeinträchtigen würden, separiert werden; die Verschaltung der Zellen erfolgt später durch „Schindeln".Laser scribing also corresponds to the state of the art in the separation of thin-film tents during deposition on glass. However, it is neither known nor obvious to use this technology for the separation of the edge regions or cut edges of thin-film cells on a flexible band: on the one hand, it is not intended, as is the case with the thin-film modules made of glass, to have an integrated interconnection of the individual cells but it should be separated potentially defective areas that would affect the efficiency of the whole cell; the interconnection of the cells is done later by "shingles".
Andererseits ist die Laserritzung bei Bandzellen schwierig, weil die elektrisch leitende Fensterschicht durchtrennt werden soll, die hochtransparent ist, während die darunter liegende Absorberschicht Strahlung, zumindest im sichtbaren Spektralbereich, bestens absorbiert. Um die Fensterschicht im „Ritzgraben" zu verdampfen, muss also eine Wellenlänge der Laser-Strahlung gewählt werden, die vom Fenstermaterial absorbiert wird. Gleichzeitig soll das Absorbermaterial in der unmittelbaren Umgebung des Ritzgrabens nicht wesentlich über 200°C erwärmt werden, weil dies seine photoelektrische Funktion beeinträchtigen könnte. Ist der Ritzgraben zu tief, d.h. wird das Absorbematerial vollständig abgetragen, so besteht die Gefahr, dass der Rückkontakt (in der Regel Molybdän) verdampft und hierdurch Kurzschlüsse, die ja gerade separiert werden sollen, überhaupt erst erzeugt werden.on the other hand The laser scribing in ribbon cells is difficult because the electric conductive window layer is to be severed, which is highly transparent, while the underlying absorber layer radiation, at least in the visible Spectral range, well absorbed. In order to evaporate the window layer in the "Ritzgraben", must So a wavelength of Laser radiation selected which is absorbed by the window material. At the same time the absorber material in the immediate vicinity of the Ritzgraben not much above Heated to 200 ° C, because this affects its photoelectric function could. If the Ritzgraben is too deep, i. the absorbent material is completely removed, so there is a risk that the back contact (usually molybdenum) evaporates and thereby shorts, which are to be separated, in the first place.
Obwohl die geschilderten Schwierigkeiten zunächst den Einsatz von Laserstrahlen zur Zellen-Separation bei Bandzellen problematisch erscheinen lassen, haben Versuche die Eignung erwiesen, bei richtiger Wahl der Wellenlänge, Bestrahlungs-Intensität und – zeit, Brennfleck-Größe und Vorschubgeschwindigkeit usw. In der Laser-Benutzung liegt also eine wesentliche Verbesserung des Erfindungsgedankens.Even though the difficulties described initially the use of laser beams make the cell separation problematic in band cells, Experiments have shown suitability, with proper choice of wavelength, irradiation intensity and time, Focal spot size and feed rate So in laser use is a significant improvement of the inventive concept.
Eine
wertere Verbesserung besteht darin, den Wirkungsgrad von Bandbereichen
am durchlaufenden Band zu messen oder Fehler der durchgehenden Solarzellen-Beschichtung zu dedektieren, z.B.
durch Thermographie, bevor das Band in Einzelzellen zerschnitten
ist, und mit dem Messergebnis über
einen Prozessrechner die Zerlegung des Bandes durch Quer-Ritzen
und Schneiden zu steuern. Dies wird an einem Beispiel deutlich:
angenommen, die Länge
der Einzelzellen soll 40 cm betragen; am durchlaufenden Band wird
nun ein Fehler in 8 cm Abstand vom Zellenanfang entdeckt. Der Prozessrechner
veranlasst eine Doppel-Ritzung, Abtrennung und Neubeginn in 10 cm
Abstand vom Zellenanfang, sodass statt einer kompletten Zelle nur
25% verworfen werden. Bedenkt man, dass die Ausbeute (yield) massgeblich
die Ertragslage von Herstellerfirmen von Dünnschicht-Solarzellen/-modulen
bestimmt, so liegt in dieser Vorgehensweise ein erheblicher Vorteil,
welcher durch andere Methoden der Separation von Einzelzellen aus
einem Zellenband, beispielsweise durch das Drucken einer isolierenden
Sperrschicht als Zellenbegrenzung nach
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200410016313 DE102004016313A1 (en) | 2004-03-29 | 2004-03-29 | Method and equipment for manufacturing individual solar cells from flexible metal band, previously coated with solar cell layer, with edge regions separated in band longitudinal direction by slitting and cut positions of band by double slit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200410016313 DE102004016313A1 (en) | 2004-03-29 | 2004-03-29 | Method and equipment for manufacturing individual solar cells from flexible metal band, previously coated with solar cell layer, with edge regions separated in band longitudinal direction by slitting and cut positions of band by double slit |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102004016313A1 true DE102004016313A1 (en) | 2005-10-13 |
Family
ID=34983035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200410016313 Withdrawn DE102004016313A1 (en) | 2004-03-29 | 2004-03-29 | Method and equipment for manufacturing individual solar cells from flexible metal band, previously coated with solar cell layer, with edge regions separated in band longitudinal direction by slitting and cut positions of band by double slit |
Country Status (1)
Country | Link |
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DE (1) | DE102004016313A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007034644A1 (en) * | 2007-07-23 | 2009-01-29 | Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. | Method and device for laser structuring of solar cells |
EP2093036A2 (en) | 2008-02-22 | 2009-08-26 | Jenoptik Automatisierungstechnik GmbH | Method and device for the mechanical structuring of flexible thin-film solar cells |
DE102008020749A1 (en) * | 2008-04-22 | 2009-10-29 | Cis Solartechnik Gmbh & Co. Kg | Process for producing a solar cell |
DE102008053595A1 (en) * | 2008-10-15 | 2010-04-29 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Schichtmaterialabtragverfahren by means of laser radiation |
DE102008041437A1 (en) * | 2008-08-21 | 2010-06-10 | Carl Baasel Lasertechnik Gmbh & Co. Kg | Method for processing coating system arranged on flexible substrate, particularly during manufacturing of thin film solar module, involves applying foil on carrier, where foil is made up of flexible substrate |
DE102015211853B3 (en) * | 2015-06-25 | 2016-06-16 | Thyssenkrupp Ag | Method for coating a surface of a metal strip and metal strip coating device |
-
2004
- 2004-03-29 DE DE200410016313 patent/DE102004016313A1/en not_active Withdrawn
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007034644A1 (en) * | 2007-07-23 | 2009-01-29 | Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. | Method and device for laser structuring of solar cells |
EP2093036A2 (en) | 2008-02-22 | 2009-08-26 | Jenoptik Automatisierungstechnik GmbH | Method and device for the mechanical structuring of flexible thin-film solar cells |
DE102008010783A1 (en) | 2008-02-22 | 2009-08-27 | Jenoptik Automatisierungstechnik Gmbh | Method for mechanical structuring of flexible thin-film solar cells and a device suitable for this purpose |
EP2093036A3 (en) * | 2008-02-22 | 2013-01-16 | JENOPTIK Automatisierungstechnik GmbH | Method and device for the mechanical structuring of flexible thin-film solar cells |
DE102008020749A1 (en) * | 2008-04-22 | 2009-10-29 | Cis Solartechnik Gmbh & Co. Kg | Process for producing a solar cell |
WO2009129803A2 (en) * | 2008-04-22 | 2009-10-29 | Cis Solartechnik Gmbh & Co. Kg | Method for producing a solar cell |
WO2009129803A3 (en) * | 2008-04-22 | 2011-02-24 | Cis Solartechnik Gmbh & Co. Kg | Method for producing a solar cell |
DE102008041437A1 (en) * | 2008-08-21 | 2010-06-10 | Carl Baasel Lasertechnik Gmbh & Co. Kg | Method for processing coating system arranged on flexible substrate, particularly during manufacturing of thin film solar module, involves applying foil on carrier, where foil is made up of flexible substrate |
DE102008053595A1 (en) * | 2008-10-15 | 2010-04-29 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Schichtmaterialabtragverfahren by means of laser radiation |
DE102015211853B3 (en) * | 2015-06-25 | 2016-06-16 | Thyssenkrupp Ag | Method for coating a surface of a metal strip and metal strip coating device |
US10739286B2 (en) | 2015-06-25 | 2020-08-11 | Thyssenkrupp Steel Europe Ag | Method for coating a surface of a metal strip and a metal strip-coating device |
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