DE10146879A1 - Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected - Google Patents
Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detectedInfo
- Publication number
- DE10146879A1 DE10146879A1 DE2001146879 DE10146879A DE10146879A1 DE 10146879 A1 DE10146879 A1 DE 10146879A1 DE 2001146879 DE2001146879 DE 2001146879 DE 10146879 A DE10146879 A DE 10146879A DE 10146879 A1 DE10146879 A1 DE 10146879A1
- Authority
- DE
- Germany
- Prior art keywords
- cracks
- light source
- electronic camera
- solar cells
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 8
- 239000010703 silicon Substances 0.000 title claims abstract description 8
- 235000012431 wafers Nutrition 0.000 title claims abstract description 8
- 230000001066 destructive effect Effects 0.000 title claims abstract 3
- 238000001514 detection method Methods 0.000 title claims description 4
- 238000012360 testing method Methods 0.000 title claims description 4
- 230000004807 localization Effects 0.000 claims abstract description 3
- 238000005259 measurement Methods 0.000 claims description 11
- 230000035945 sensitivity Effects 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000011156 evaluation Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 claims 1
- 238000010998 test method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
- G01N21/894—Pinholes
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
Description
Die Erfindung betrifft ein Verfahren zum berührungslosen Nachweis und zur Lokalisierung von Rissen in Silizium-Solarzellen und Silizium-Scheiben (Wafern). The invention relates to a method for contactless detection and localization of cracks in silicon solar cells and silicon wafers.
Risse in Solarzellen und Wafern beeinträchtigen deren Funktion hinsichtlich mechanischer Festigkeit und elektrischer Leitfähigkeit. Deshalb werden Prüfverfahren benötigt, mit denen die Risse nachgewiesen werden können. Die Risse sind oft schwer zu erkennen, da sie sehr schmal sein können und mit bloßem Auge nicht zu sehen sind. Cracks in solar cells and wafers impair their mechanical function Strength and electrical conductivity. Therefore test methods are needed with which the cracks can be detected. The cracks are often difficult to spot because they are very can be narrow and cannot be seen with the naked eye.
Bestehende Prüfverfahren zur Risserkennung sind Farbeindringprüfung, Ultraschallprüfung, Magnetverfahren, Wirbelstromverfahren, Röntgenprüfung, Schärografie oder thermische Verfahren (Untersuchung der Wärmeleitung). Alle diese Verfahren sind für Solarzellen nicht oder nur sehr eingeschränkt anwendbar, da sie aufwändig, teuer, verschmutzend oder ungenau sind. Existing test methods for crack detection are dye penetration testing, ultrasonic testing, Magnetic methods, eddy current methods, X-ray inspection, Schärographie or thermal Procedure (investigation of heat conduction). All of these methods are not for solar cells or can only be used to a very limited extent because they are complex, expensive, polluting or inaccurate are.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren mit den Merkmalen des Oberbegriffes des Patentanspruches 1 derart weiterzubilden, dass es schnell durchführbar ist, reproduzierbare Ergebnisse liefert und die untersuchten Objekte nicht beschädigt werden. The invention has for its object a method with the features of Develop the preamble of claim 1 such that it can be carried out quickly, provides reproducible results and the examined objects are not damaged.
Diese Aufgabe wird durch die kennzeichnenden Merkmale des Patentanspruchs 1 gelöst. Vorteilhafte Weiterbildungen ergeben sich aus den Unteransprüchen 2 bis 10. This object is achieved by the characterizing features of patent claim 1. Advantageous further developments result from subclaims 2 to 10.
Der Kern der Erfindung wird im Wesentlichen darin gesehen, dass als Aufnahmegerät eine elektronische Kamera verwendet wird, die das Licht misst, welches von einer Lichtquelle auf der Gegenseite des untersuchten Objektes erzeugt und aufgrund des Risses durch das Messobjekt transmittiert wird. The essence of the invention is essentially seen in the fact that a electronic camera is used which measures the light emitted by a light source the opposite side of the examined object and due to the crack by the Measurement object is transmitted.
Dieses Verfahren ist deutlich schneller als die oben erwähnten bestehenden Prüfverfahren. This method is significantly faster than the existing test methods mentioned above.
Die Lichtquelle führt bei genügend hoher Leistung zu einer reversiblen kurzzeitigen Aufweitung des Risses, was die Empfindlichkeit des Verfahrens erhöht. If the power is sufficiently high, the light source leads to a reversible short-term Widening of the crack, which increases the sensitivity of the procedure.
Das Verfahren wird durch den Einsatz eines Spektralfilters weitergebildet, der zu einer Steigerung der Messempfindlichkeit führt, da das Licht ausgefiltert wird, welches auch ohne Riss transmittiert wird. Silizium ist für rotes Licht teilweise transparent, sodass ein Blaufilter den Kontrast deutlich erhöht. The method is further developed through the use of a spectral filter, which becomes a Increasing the measuring sensitivity leads, because the light is filtered out, which also without Crack is transmitted. Silicon is partially transparent to red light, making it a blue filter the contrast increased significantly.
Die Kamera kann an einen Computer angeschlossen werden, der die Bilddaten erfasst und verarbeitet. Das Verfahren wird weitergebildet dadurch, dass durch die Anwendung von Bildverarbeitungssoftware Störungen, z. B. durch Reflexe oder andere Umgebungseinflüsse reduziert werden. The camera can be connected to a computer that captures the image data and processed. The process is further developed by using Image processing software malfunctions, e.g. B. by reflections or other environmental influences be reduced.
Das Verfahren wird dadurch weitergebildet, dass ein räumlich oder zeitlich veränderliches Lichtmuster das Messobjekt beleuchtet, sodass verstärkte Spannungen innerhalb des Messobjektes entstehen, welche die Aufweitung der Risse verstärken. The method is further developed in that a spatially or temporally variable Light pattern illuminates the measurement object, so that increased voltages within the Object to be measured, which increase the widening of the cracks.
Die Aufweitung von Rissen kann auch dadurch erzielt werden, dass mechanische Schwingungen (Schall) im Messobjekt erzeugt werden. Dazu wird z. B. ein Schallwandler berührend oder berührungslos (über die Luft) an das Messobjekt angekoppelt. Cracks can also be widened by mechanical Vibrations (sound) are generated in the measurement object. For this, z. B. a transducer coupled to the object to be measured by touch or contact (via the air).
Die Erfindung ist anhand eines Ausführungsbeispieles in der Zeichnungsfigur Fig. 1 näher erläutert. Diese zeigt eine seitliche Ansicht des Messaufbaus mit Messobjekt, Kamera und Lichtquelle. The invention is explained in more detail using an exemplary embodiment in the drawing figure FIG. 1. This shows a side view of the measurement setup with the measurement object, camera and light source.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2001146879 DE10146879A1 (en) | 2001-09-26 | 2001-09-26 | Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2001146879 DE10146879A1 (en) | 2001-09-26 | 2001-09-26 | Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10146879A1 true DE10146879A1 (en) | 2003-04-17 |
Family
ID=7700003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2001146879 Withdrawn DE10146879A1 (en) | 2001-09-26 | 2001-09-26 | Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE10146879A1 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005002651B3 (en) * | 2005-01-19 | 2006-08-24 | Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Arbeit, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Braunschweig und Berlin | Method and device for detecting defects in solar cell elements |
EP1956366A1 (en) * | 2007-02-06 | 2008-08-13 | Basler AG | Method and assembly for detecting defects |
WO2008152020A1 (en) * | 2007-06-12 | 2008-12-18 | Icos Vision Systems Nv | Method for semiconductor substrate inspection |
ITUD20090119A1 (en) * | 2009-06-22 | 2010-12-23 | Applied Materials Inc | IMPROVED VISION SYSTEM FOR ALIGNMENT OF A SCREEN PRINTING SCHEME |
DE102009050711A1 (en) | 2009-10-26 | 2011-05-05 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
EP2359410A1 (en) * | 2008-12-10 | 2011-08-24 | Applied Materials, Inc. | Enhanced vision system for screen printing pattern alignment |
DE202010000365U1 (en) | 2010-03-12 | 2011-08-30 | Kuka Systems Gmbh | test equipment |
DE202013009329U1 (en) | 2013-10-18 | 2014-03-14 | Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e.V. | High-performance surface light source |
DE102013017501A1 (en) | 2013-10-18 | 2015-04-23 | Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e. V. | Method and device for testing silicon components |
US9255893B2 (en) | 2011-04-18 | 2016-02-09 | Kla-Tencor Corporation | Apparatus for illuminating substrates in order to image micro cracks, pinholes and inclusions in monocrystalline and polycrystalline substrates and method therefore |
CN111323431A (en) * | 2020-03-10 | 2020-06-23 | 欧贝黎新能源科技股份有限公司 | Silicon wafer microcrack detection device based on solar cell and application method thereof |
-
2001
- 2001-09-26 DE DE2001146879 patent/DE10146879A1/en not_active Withdrawn
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005002651B3 (en) * | 2005-01-19 | 2006-08-24 | Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Arbeit, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Braunschweig und Berlin | Method and device for detecting defects in solar cell elements |
EP1956366A1 (en) * | 2007-02-06 | 2008-08-13 | Basler AG | Method and assembly for detecting defects |
WO2008152020A1 (en) * | 2007-06-12 | 2008-12-18 | Icos Vision Systems Nv | Method for semiconductor substrate inspection |
EP2359410A1 (en) * | 2008-12-10 | 2011-08-24 | Applied Materials, Inc. | Enhanced vision system for screen printing pattern alignment |
EP2359410A4 (en) * | 2008-12-10 | 2014-09-24 | Applied Materials Inc | Enhanced vision system for screen printing pattern alignment |
ITUD20090119A1 (en) * | 2009-06-22 | 2010-12-23 | Applied Materials Inc | IMPROVED VISION SYSTEM FOR ALIGNMENT OF A SCREEN PRINTING SCHEME |
US9157869B2 (en) | 2009-10-26 | 2015-10-13 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
WO2011050873A1 (en) | 2009-10-26 | 2011-05-05 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
DE102009050711A1 (en) | 2009-10-26 | 2011-05-05 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
DE202010018630U1 (en) | 2009-10-26 | 2019-03-11 | Schott Ag | Apparatus for detecting cracks in semiconductor substrates |
DE202010000365U1 (en) | 2010-03-12 | 2011-08-30 | Kuka Systems Gmbh | test equipment |
WO2011110419A3 (en) * | 2010-03-12 | 2011-12-29 | Kuka Systems Gmbh | Test device and a test method |
US9255893B2 (en) | 2011-04-18 | 2016-02-09 | Kla-Tencor Corporation | Apparatus for illuminating substrates in order to image micro cracks, pinholes and inclusions in monocrystalline and polycrystalline substrates and method therefore |
DE202013009329U1 (en) | 2013-10-18 | 2014-03-14 | Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e.V. | High-performance surface light source |
DE102013017501A1 (en) | 2013-10-18 | 2015-04-23 | Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e. V. | Method and device for testing silicon components |
CN111323431A (en) * | 2020-03-10 | 2020-06-23 | 欧贝黎新能源科技股份有限公司 | Silicon wafer microcrack detection device based on solar cell and application method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8141 | Disposal/no request for examination | ||
8170 | Reinstatement of the former position | ||
8110 | Request for examination paragraph 44 | ||
R120 | Application withdrawn or ip right abandoned |
Effective date: 20120126 |