DE10146879A1 - Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected - Google Patents

Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected

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Publication number
DE10146879A1
DE10146879A1 DE2001146879 DE10146879A DE10146879A1 DE 10146879 A1 DE10146879 A1 DE 10146879A1 DE 2001146879 DE2001146879 DE 2001146879 DE 10146879 A DE10146879 A DE 10146879A DE 10146879 A1 DE10146879 A1 DE 10146879A1
Authority
DE
Germany
Prior art keywords
cracks
light source
electronic camera
solar cells
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2001146879
Other languages
German (de)
Inventor
Oliver Schreer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DCG Systems GmbH
Original Assignee
Thermosensorik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermosensorik GmbH filed Critical Thermosensorik GmbH
Priority to DE2001146879 priority Critical patent/DE10146879A1/en
Publication of DE10146879A1 publication Critical patent/DE10146879A1/en
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
    • G01N21/894—Pinholes

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)

Abstract

Method for non-destructive and non-contact localization of cracks in silicon solar cells and silicon wafers uses an electronic camera to measure light transmitted through a wafer or cell. The light originates from a light source placed on the other side of the wafer or cell to the camera. The invention also relates to a corresponding device.

Description

Die Erfindung betrifft ein Verfahren zum berührungslosen Nachweis und zur Lokalisierung von Rissen in Silizium-Solarzellen und Silizium-Scheiben (Wafern). The invention relates to a method for contactless detection and localization of cracks in silicon solar cells and silicon wafers.

Risse in Solarzellen und Wafern beeinträchtigen deren Funktion hinsichtlich mechanischer Festigkeit und elektrischer Leitfähigkeit. Deshalb werden Prüfverfahren benötigt, mit denen die Risse nachgewiesen werden können. Die Risse sind oft schwer zu erkennen, da sie sehr schmal sein können und mit bloßem Auge nicht zu sehen sind. Cracks in solar cells and wafers impair their mechanical function Strength and electrical conductivity. Therefore test methods are needed with which the cracks can be detected. The cracks are often difficult to spot because they are very can be narrow and cannot be seen with the naked eye.

Bestehende Prüfverfahren zur Risserkennung sind Farbeindringprüfung, Ultraschallprüfung, Magnetverfahren, Wirbelstromverfahren, Röntgenprüfung, Schärografie oder thermische Verfahren (Untersuchung der Wärmeleitung). Alle diese Verfahren sind für Solarzellen nicht oder nur sehr eingeschränkt anwendbar, da sie aufwändig, teuer, verschmutzend oder ungenau sind. Existing test methods for crack detection are dye penetration testing, ultrasonic testing, Magnetic methods, eddy current methods, X-ray inspection, Schärographie or thermal Procedure (investigation of heat conduction). All of these methods are not for solar cells or can only be used to a very limited extent because they are complex, expensive, polluting or inaccurate are.

Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren mit den Merkmalen des Oberbegriffes des Patentanspruches 1 derart weiterzubilden, dass es schnell durchführbar ist, reproduzierbare Ergebnisse liefert und die untersuchten Objekte nicht beschädigt werden. The invention has for its object a method with the features of Develop the preamble of claim 1 such that it can be carried out quickly, provides reproducible results and the examined objects are not damaged.

Diese Aufgabe wird durch die kennzeichnenden Merkmale des Patentanspruchs 1 gelöst. Vorteilhafte Weiterbildungen ergeben sich aus den Unteransprüchen 2 bis 10. This object is achieved by the characterizing features of patent claim 1. Advantageous further developments result from subclaims 2 to 10.

Der Kern der Erfindung wird im Wesentlichen darin gesehen, dass als Aufnahmegerät eine elektronische Kamera verwendet wird, die das Licht misst, welches von einer Lichtquelle auf der Gegenseite des untersuchten Objektes erzeugt und aufgrund des Risses durch das Messobjekt transmittiert wird. The essence of the invention is essentially seen in the fact that a electronic camera is used which measures the light emitted by a light source the opposite side of the examined object and due to the crack by the Measurement object is transmitted.

Dieses Verfahren ist deutlich schneller als die oben erwähnten bestehenden Prüfverfahren. This method is significantly faster than the existing test methods mentioned above.

Die Lichtquelle führt bei genügend hoher Leistung zu einer reversiblen kurzzeitigen Aufweitung des Risses, was die Empfindlichkeit des Verfahrens erhöht. If the power is sufficiently high, the light source leads to a reversible short-term Widening of the crack, which increases the sensitivity of the procedure.

Das Verfahren wird durch den Einsatz eines Spektralfilters weitergebildet, der zu einer Steigerung der Messempfindlichkeit führt, da das Licht ausgefiltert wird, welches auch ohne Riss transmittiert wird. Silizium ist für rotes Licht teilweise transparent, sodass ein Blaufilter den Kontrast deutlich erhöht. The method is further developed through the use of a spectral filter, which becomes a Increasing the measuring sensitivity leads, because the light is filtered out, which also without Crack is transmitted. Silicon is partially transparent to red light, making it a blue filter the contrast increased significantly.

Die Kamera kann an einen Computer angeschlossen werden, der die Bilddaten erfasst und verarbeitet. Das Verfahren wird weitergebildet dadurch, dass durch die Anwendung von Bildverarbeitungssoftware Störungen, z. B. durch Reflexe oder andere Umgebungseinflüsse reduziert werden. The camera can be connected to a computer that captures the image data and processed. The process is further developed by using Image processing software malfunctions, e.g. B. by reflections or other environmental influences be reduced.

Das Verfahren wird dadurch weitergebildet, dass ein räumlich oder zeitlich veränderliches Lichtmuster das Messobjekt beleuchtet, sodass verstärkte Spannungen innerhalb des Messobjektes entstehen, welche die Aufweitung der Risse verstärken. The method is further developed in that a spatially or temporally variable Light pattern illuminates the measurement object, so that increased voltages within the Object to be measured, which increase the widening of the cracks.

Die Aufweitung von Rissen kann auch dadurch erzielt werden, dass mechanische Schwingungen (Schall) im Messobjekt erzeugt werden. Dazu wird z. B. ein Schallwandler berührend oder berührungslos (über die Luft) an das Messobjekt angekoppelt. Cracks can also be widened by mechanical Vibrations (sound) are generated in the measurement object. For this, z. B. a transducer coupled to the object to be measured by touch or contact (via the air).

Die Erfindung ist anhand eines Ausführungsbeispieles in der Zeichnungsfigur Fig. 1 näher erläutert. Diese zeigt eine seitliche Ansicht des Messaufbaus mit Messobjekt, Kamera und Lichtquelle. The invention is explained in more detail using an exemplary embodiment in the drawing figure FIG. 1. This shows a side view of the measurement setup with the measurement object, camera and light source.

Claims (10)

1. Verfahren zum Nachweis und zur berührungslosen und zerstörungsfreien Lokalisierung von Rissen in Silizium-Solarzellen und Silizium-Scheiben (Wafern) dadurch gekennzeichnet, dass als Messgerät eine elektronische Kamera verwendet wird, die das Licht misst, das von einer Lichtquelle auf der Gegenseite der Zelle/des Wafers erzeugt wird und durch den Riss tritt. 1. A method for the detection and non-contact and non-destructive localization of cracks in silicon solar cells and silicon wafers, characterized in that an electronic camera is used as a measuring device that measures the light emitted by a light source on the opposite side of the cell / of the wafer is generated and passes through the crack. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass durch eine Wärmequelle Spannungen im Messobjekt erzeugt werden, die zu einer Aufweitung von Rissen führen. 2. The method according to claim 1, characterized in that voltages are generated in the measurement object by a heat source, which lead to a Widen cracks. 3. Verfahren nach Anspruch 1 und 2, dadurch gekennzeichnet, dass dass als Wärmequelle die Lichtquelle verwendet wird. 3. The method according to claim 1 and 2, characterized in that that the light source is used as the heat source. 4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass durch Einsatz von Spektralfiltern zusammen mit der Lichtquelle oder zusammen mit der Kamera, unter Ausnutzung der spektralen Eigenschaften des Messobjektes die Messempfindlichkeit gesteigert wird. 4. The method according to any one of the preceding claims, characterized in that by using spectral filters together with the light source or together with the camera, taking advantage of the spectral properties of the measurement object Measurement sensitivity is increased. 5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass eine Farbkamera verwendet wird. 5. The method according to any one of the preceding claims, characterized in that a color camera is used. 6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass ein elektronischer Rechner die Bildverarbeitung und die Auswertung der Messdaten vornimmt. 6. The method according to any one of the preceding claims, characterized in that an electronic computer for image processing and evaluation of the measurement data performs. 7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass als Lichtquelle ein Laser eingesetzt wird. 7. The method according to any one of the preceding claims, characterized in that a laser is used as the light source. 8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Lichtquelle so gestaltet ist, dass ein räumlich oder zeitlich veränderliches Lichtmuster das Messobjekt beleuchtet. 8. The method according to any one of the preceding claims, characterized in that the light source is designed so that it is spatially or temporally variable Light pattern illuminates the measurement object. 9. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass zur Aufweitung der Risse ein Schallwandler eingesetzt wird, der das Messobjekt zu Schwingungen anregt. 9. The method according to any one of the preceding claims, characterized in that To widen the cracks, a sound transducer is used, which closes the test object Stimulates vibrations. 10. Vorrichtung zur Durchführung des Verfahrens nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass eine elektronische Kamera und eine Lichtquelle sich auf gegenüberliegenden Seiten des Messobjektes befinden. 10. Device for performing the method according to one of the preceding Expectations, characterized in that an electronic camera and a light source are on opposite sides of the measurement object.
DE2001146879 2001-09-26 2001-09-26 Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected Withdrawn DE10146879A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2001146879 DE10146879A1 (en) 2001-09-26 2001-09-26 Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected

Applications Claiming Priority (1)

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DE2001146879 DE10146879A1 (en) 2001-09-26 2001-09-26 Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005002651B3 (en) * 2005-01-19 2006-08-24 Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Arbeit, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Braunschweig und Berlin Method and device for detecting defects in solar cell elements
EP1956366A1 (en) * 2007-02-06 2008-08-13 Basler AG Method and assembly for detecting defects
WO2008152020A1 (en) * 2007-06-12 2008-12-18 Icos Vision Systems Nv Method for semiconductor substrate inspection
ITUD20090119A1 (en) * 2009-06-22 2010-12-23 Applied Materials Inc IMPROVED VISION SYSTEM FOR ALIGNMENT OF A SCREEN PRINTING SCHEME
DE102009050711A1 (en) 2009-10-26 2011-05-05 Schott Ag Method and device for detecting cracks in semiconductor substrates
EP2359410A1 (en) * 2008-12-10 2011-08-24 Applied Materials, Inc. Enhanced vision system for screen printing pattern alignment
DE202010000365U1 (en) 2010-03-12 2011-08-30 Kuka Systems Gmbh test equipment
DE202013009329U1 (en) 2013-10-18 2014-03-14 Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e.V. High-performance surface light source
DE102013017501A1 (en) 2013-10-18 2015-04-23 Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e. V. Method and device for testing silicon components
US9255893B2 (en) 2011-04-18 2016-02-09 Kla-Tencor Corporation Apparatus for illuminating substrates in order to image micro cracks, pinholes and inclusions in monocrystalline and polycrystalline substrates and method therefore
CN111323431A (en) * 2020-03-10 2020-06-23 欧贝黎新能源科技股份有限公司 Silicon wafer microcrack detection device based on solar cell and application method thereof

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005002651B3 (en) * 2005-01-19 2006-08-24 Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Arbeit, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Braunschweig und Berlin Method and device for detecting defects in solar cell elements
EP1956366A1 (en) * 2007-02-06 2008-08-13 Basler AG Method and assembly for detecting defects
WO2008152020A1 (en) * 2007-06-12 2008-12-18 Icos Vision Systems Nv Method for semiconductor substrate inspection
EP2359410A1 (en) * 2008-12-10 2011-08-24 Applied Materials, Inc. Enhanced vision system for screen printing pattern alignment
EP2359410A4 (en) * 2008-12-10 2014-09-24 Applied Materials Inc Enhanced vision system for screen printing pattern alignment
ITUD20090119A1 (en) * 2009-06-22 2010-12-23 Applied Materials Inc IMPROVED VISION SYSTEM FOR ALIGNMENT OF A SCREEN PRINTING SCHEME
US9157869B2 (en) 2009-10-26 2015-10-13 Schott Ag Method and device for detecting cracks in semiconductor substrates
WO2011050873A1 (en) 2009-10-26 2011-05-05 Schott Ag Method and device for detecting cracks in semiconductor substrates
DE102009050711A1 (en) 2009-10-26 2011-05-05 Schott Ag Method and device for detecting cracks in semiconductor substrates
DE202010018630U1 (en) 2009-10-26 2019-03-11 Schott Ag Apparatus for detecting cracks in semiconductor substrates
DE202010000365U1 (en) 2010-03-12 2011-08-30 Kuka Systems Gmbh test equipment
WO2011110419A3 (en) * 2010-03-12 2011-12-29 Kuka Systems Gmbh Test device and a test method
US9255893B2 (en) 2011-04-18 2016-02-09 Kla-Tencor Corporation Apparatus for illuminating substrates in order to image micro cracks, pinholes and inclusions in monocrystalline and polycrystalline substrates and method therefore
DE202013009329U1 (en) 2013-10-18 2014-03-14 Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e.V. High-performance surface light source
DE102013017501A1 (en) 2013-10-18 2015-04-23 Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e. V. Method and device for testing silicon components
CN111323431A (en) * 2020-03-10 2020-06-23 欧贝黎新能源科技股份有限公司 Silicon wafer microcrack detection device based on solar cell and application method thereof

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Effective date: 20120126