DE10122361A1 - Semiconductor element used as a MOSFET or IGBT comprises a semiconductor layer of first conductivity embedded in semiconductor body - Google Patents

Abstract

Semiconductor element comprises a semiconductor layer (5) of first conductivity embedded in semiconductor body (1). The semiconductor layer has a partial dopant (16) of first conductivity which is incompletely ionized at room temperature and has a degree of ionization which increases with increasing temperature. Preferred Features: The dopant is arranged in a first region (15) of a body zone, in which the first region is arranged at a distance from a channel zone (10). The dopant is uniformly distributed within the semiconductor layer and/or in the body zone.

Description

The invention relates to semiconductor devices according to the Ober understood the claims 1 and 2.

Such a semiconductor component can have any configuration be d. H. it can be a resistance, a toe nerdiode, a transistor, an IGBT, a thyristor or similar act. The following is an example of a half lead terbauelementes of a controlled by field effect MOS Transistor - also called MOSFET for short - but without the invention to this semiconductor device restrict.

The ohmic resistance of semiconductor components is be known to be more or less temperature dependent, d. H. the resistance increases with increasing temperature. So For example, the forward resistance of 600 V Reverse voltage designed MOSFETs by up to a factor of 2.5 rise, resulting in significantly higher losses when warm leads. These losses caused by semiconductor devices very complex and therefore expensive measures compensated for who it is important to avoid that.

However, it is much more serious if the temperature-dependent increase in resistance interferes with the functionality of semiconductor components. This is explained using an example:
The following statements apply to an n-channel MOSFET, but can also be applied in a corresponding manner to a p-channel MOSFET. For current common embodiments, an n-channel MOSFET always also includes an npn bipolar transistor which is inherent to the MOSFET. The individual layers of this bipolar transistor are formed by the n-doped, voltage-absorbing inner or drift zone, the p-doped body in which a channel zone is formed when a gate potential is applied, and the n-doped source zone of the MOSFET. For the MOSFET, this bipolar transistor represents a parasitic, i.e. application-disturbing, structure.

Pass through the holes that are available in the case of an avalanche Breakthrough or commutation arise, the p-doped Body area, so builds without appropriate precaution recorded a voltage drop there locally, which signal for the control connection or the base of the parasitic Bipolar transistor acts and turns it on. Because of who emits the charge carrier, causing this cell area locally warmed more than its surroundings. Since with increasing Temperature the resistance of a semiconductor layer and the Current gain of a bipolar transistor increases, arises here a quasi self-controlled control loop with positive Feedback. The emitter current is in the para soar bipolar transistor soar long until the component breaks due to thermal overload is disturbed.

MOSFETs used today therefore have means which prevent this self-destruction mechanism by ensuring that the parasitic bipolar transistor does not even come into the switched-on state. As a rule, the base of the parasitic bipolar transistor is doped sufficiently high so that the voltage threshold (approx. 0.7 V) required to switch on the parasitic bipolar transistor is never exceeded. For this purpose, an "under structuring" of the p-doped body region is preferably used:
The background doping of the p-doped body region is designed such that a defined threshold voltage can be set in the region of the channel zone of the MOSFET. However, this provides a relatively high-resistance film resistance in the body area. To prevent the parasitic bipolar transistor, the conductance of those body zone regions which are arranged outside the region of the channel zone and are therefore not effective with regard to the threshold voltage of the MOSFET is increased by additional doping, for example by deep implantation. This results in a very low-resistance layer far from the channel zone, which specifies the hole path in the event of breakdown / commutation.

Another problem arises from the fact that with a Power MOSFET due to manufacturing fluctuations individually ne cells earlier, i.e. H. at lower voltages than usual cells of the cell field, go into the breakthrough. Therefore only single parasitic bipolar transistors address the hole current generated by voltage breakdown chen. The temperature-related increase in current gain of these bipolar transistors causes the span breakthrough and thus the formation of parasitic bipo Lar transistors are not evenly distributed across the cell array divides, but on the few cells that respond first limited. Now the MOSFET has a current carrying capacity required in the range of its nominal current, this current must be delivered by very few cells, making it there very high current densities arise which destroy the component can. To avoid this, the body zones of all cells len as homogeneous as possible, that is, with as identical as possible Doping concentrations, doped across the entire cell field be what is technologically very complex and therefore very expensive is.

Known semiconductor devices therefore try techno logically very complex processes switching off the parasi to avoid secondary bipolar transistors. A semiconductor device ment, which is designed so that the temperature-dependent ge characteristic and thereby the effect of a parasitic Bipolar transistor is reduced is not yet known.  

Based on this, the present invention has the object to provide a semiconductor device which a temperature-related changes in electrical conductance ability of a semiconductor device more or less like.

According to the invention, this object is achieved by means of semiconductor components te solved with the features of claims 1 and 2. the according to generic semiconductor components are provided, which are characterized in that a semiconductor layer or a body zone of at least partially dopants of the same type Has polarity that is only partially ionic at room temperature are based and their degree of ionization with increasing tempera increases.

In complete departure from previous approaches ("Combat the cause ") is the basic idea of the present Er Above all, in the generally applicable Relation for semiconductor components according to the state of the Technology according to which the current gain B in semiconductors components with increasing temperature T, so dB (T) / dT <0 to break through. According to the invention Property of a doped semiconductor layer of a semi-lead terbauelementes modified so that the temperature dependent eliminates the conductivity of a doping layer or at least largely reduced ("Optimization the effect "). In the case of the body zones of a MOSFET these are adjusted in terms of their temperature dependency, that with a high hole current, the parasitic bipolar trans sistor is turned on, but there is no or to a very small increase in electrical resistance comes. This can avoid component destruction the.

According to the invention, additive to or instead of the rear basic doping of the doped semiconductor layer additional  Doping elements of the same polarity introduced. Under Behind basic doping is to be understood as the doping that Has "normally" doping dopants whose energies i veau in the order of magnitude of the thermal excitation energy which are completely ionized at room temperature. Such elements are e.g. B. arsenic, phosphorus, boron, aluminum, Etc.

The energy level of the additional doping elements has one relatively large distance from the corresponding valence band or Conduction band on. The property is used here, that for such doping elements only a fraction of the charge carrier at room temperature in the respective conduction band stimulates, d. H. is ionized and that this fraction is very strong depends on the temperature. This physical mechanism is known as incomplete ionization. So it will be Thursday animal elements provided under "normal" conditions gen, d. H. at the operating temperature of the semiconductor component or at room temperature, are only partially ionized. The Ab level of the dopant level of these, elements of the respective band edge sets the degree of ionization and thermi generation rate. Such elements will follow also as elements with incomplete ionization or incompletely ionized elements. With increasing Temperature increases their degree of ionization, i. H. it will be one increasing number of free charge carriers released. The temperature-related decrease in mobility of the background Doping can result from the incompletely ionized elements thus be partially or overcompensated.

The dopants with incomplete ionization can ge in some conceivable semiconductor layers be applied. It is particularly advantageous if they are in egg a resistance layer or in a body zone of a MOSFET be used. In the case of a body zone of a MOSFET, it would be advantageous if the incompletely ionized dopants  only in parts of the body zones affected by the current leading channels are spaced apart.

It is also advantageous if the dopant with incomplete ionization largely uniform inside distributed in a resistance layer or a body zone is.

As an n-doping element with incomplete ionization selenium is particularly useful as a p-doping element Palladium. These elements have an Io at room temperature Degree of degree of about 10-20%. However, the invention not limited to these elements. Rather could Place these elements also other incompletely ionized ones Elements are used. For example, as n- doping element also use bismuth, titanium, tantalum, etc. be det. Alternatively, could also be used as a p-doping element Indium, thallium, etc. can be used.

The semiconductor component typically has a cell field with a large number of cells, with min at least a single transistor is arranged. This single transistors connected in parallel across their load paths and can be controlled via a common control, definie active area. In the active area of the cell field there is a first area in which the doping concentration of incompletely ionized elements higher than in the other areas of the active area. On in this way it can be defined in what way rich breaks through the semiconductor device first.

The semiconductor component has an active current flow contributing area and a border area over which at Applying a voltage to the semiconductor device the field lines defined are led out of the semiconductor body. because at increases the doping concentration of the incompletely ionized  Dopants from the active area of the cell field the edge area down.

The semiconductor body advantageously consists of crystalline linem silicon. However, the invention is self-evident also with other semiconductor materials, such as. B. silicon carbide, gallium arsenide, germanium, etc., applicable.

The invention is suitable for all semiconductor components, in which for the purpose of reducing the temperature dependent elements with incomplete ionization the. The invention is therefore particularly suitable for lei stung semiconductor devices, such as. B. MOSFETs - in particular re power MOSFETs or as a compensation component formed MOSFETs - which have the effect of a parasitic Bipolar transistor should be weakened. However, that is Invention is not limited to MOSFETs, but can in the framework men of the invention also on other controllable semiconductor scarf ter, for example J-FETs, IGBTs, thyristors, bipolar trans sistors and the like, are expanded. The invention is also suitable for semiconductor resistors, for example with a trim resistor or with diodes.

Advantageous refinements and developments of the Erfin are the subclaims and the description below Removable reference to the drawing.

The invention is based on the in the figures of the Exemplary embodiments illustrated in the drawing. It shows:

Fig. 1 in partial cross-section a first embodiment of the present invention, an n-channel D-MOSFET formed in a semiconductor device;

Fig. 2 is a partial section of a second game of a Ausführungsbei invention, formed as an n-channel D-MOSFET semiconductor device;

FIG. 3 shows the energy band diagram at room temperature (a) höhter and at he temperature (b) in the case of a boron-doped layer, and palladium;

FIG. 4 shows the doping concentrations for a semiconductor assembly element according to Figure 1 along the line CD at room temperature (a) and at elevated temperature (b).

Fig. 5 is a partial section of a third Ausführungsbei play a Halbleiterbauelemen invention tes, which is designed as n-channel power MOSFET D;

Fig. 6 is a partial section of a fourth Ausführungsbei play a Halbleiterbauele ments according to the invention, which is det as n-channel power MOSFET according to the principle of charge carrier compensation ausgebil;

Fig. 7 is a partial section of a fifth Ausführungsbei play a Halbleiterbauelemen invention tes, which is det ausgebil here as an integrated resistor;

Fig. 8 shows the dependence of the electrically active ionised dopant doped n-type of temperature for a layer of FIG. 7;

Fig. 9 shows the dependence of the normalized specific resistance state of the temperature for a conventional n-doped layer (A) and an n-doped layer of the invention according to Fig. 7 (B).

In all figures of the drawing are the same or functional same elements - unless otherwise stated - with provided with the same reference numerals.

Fig. 1 shows a partial section of a first game Ausführungsbei of a semiconductor device according to the invention. The semiconductor device is configured here as an n-channel D-MOSFET.

In FIG. 1, 1 denotes a semiconductor body - for example a single-crystalline silicon wafer. The semiconductor body 1 has a first surface 2 , the so-called front pane, and a second surface 3 , the so-called rear pane. The semiconductor body 1 has a strongly n-doped Drainzo ne 4 adjacent to both surfaces 2 , 3 . The drain zone 4 is connected to the drain connection D via a large area drain metallization 12 applied to the surface 3 .

On the opposite surface 2 , a plurality of p-doped body zones 5 are embedded in the drain zone 4 in the form of a trough. One or more heavily n-doped source zones 6 are embedded in each body zone 5 . The body zones 5 and 6 sour zones 6 can be introduced in a known manner by ion implantation or diffusion into the semiconductor body 1 . The body zones 5 are spaced apart from one another on the surface 2 by an intermediate zone 7 which is part of the drain zone 4 . Above the intermediate zones 7 , a gate electrode 8 is provided, which extends laterally ver above the source zones 6 . The gate electrodes 8 are insulated from the surface 2 via a thin Ga teoxid 9 . The regions of the body zone 5 , which are arranged below the gate electrodes 8 , thus define a channel zone 10 in which a current-carrying channel, caused by charge inversion, can form when a gate potential is applied to the gate terminal G. Furthermore, a source metallization 11 is provided which electrically contacts the source zones 6 and 5 body zones 5 via a shunt, which is formed here as contact hole contacting. The source metallization 11 is spaced against the gate electrode 8 via a protective oxide 13 . The source metallization 11 is connected to the front face 2 with a source connection S. The gate electrode 8 is connected to a gate connection G.

The gate electrodes 8 typically consist of polysilicon, but they can also be made of another material, for example of metal or silicide, although these materials are not as advantageous as highly doped polysilicon due to their manufacturing technology and their physical and electrical properties. At the same time, any other insulating material, for example silicon nitride (Si ₃ N ₄ ) or a vacuum can also be used for the gate oxide 9 and protective oxide 13 instead of silicon dioxide (SiO ₂ ), but thermally produced silicon dioxide is particularly useful when used as a gate oxide 9 highest quality and therefore preferable. Aluminum is typically used as the source metallization 11 and drain metallization 12 , but any other highly conductive material that ensures good contact with the semiconductor body could also be used here.

In the layout of the semiconductor body 1 , the regions covered with gate electrodes 8 and with body zones 5 and source zones 6 denote the cell field of a MOSFET consisting of a multiplicity of cells, only three cells being shown in detail in FIG. 1. Each cell contains a single transistor. The parallel connection of the load stretch of the large number of individual transistors results in the MOSFET.

According to the invention, the body zones 5 now each have at least one region 15 which, in addition to the p-background doping, also contains incompletely ionized p-doping dopants 16 (crosses). Palladium was used here as p-doping dopants 16 .

The doping elements with incomplete ionization 16 are arranged in the regions 15 of the body zones 5 which are not stress-relieved, that is to say in the regions of the body zone 5 outside the channel zone 10 . The incompletely ionized doping elements 16 must necessarily have the same charge polarity as the doping elements of the background doping in order to avoid charge compensation. With an n-channel MOSFET z. B. the background doping of the Bodyzo ne and the doping elements 16 p-doping.

In an alternative embodiment of the invention, the incompletely ionized elements 16 are distributed throughout the body zone 5 , that is to say the region 15 comprises the entire body zone 5 . This alternative exemplary embodiment is shown in partial section of a vertical n-channel D-MOSFET according to FIG. 2. This configuration is particularly advantageous for technological reasons, since here the incompletely ionized dopants and the dopants of the background doping can be introduced into the semiconductor body 1 using the same doping process. The semiconductor component according to the invention offers the advantage here that the incompletely ionized elements 16 do not have to be shielded from the channel zone 10 , but can even penetrate the entire body zone 5 . The operating voltage of the MOSFET results here from the totality of the free, ionized charge carriers in the channel zone 10 . Compared to known components, this leads to a very simple and also technically very unstable to fluctuating production of the MOSFETs.

The mechanism according to the invention is described in more detail below with reference to FIGS. 3 and 4, a semiconductor component corresponding to FIGS. 1 and 2 being used as a basis:
Fig. 3 (a) shows the band diagram of the base region 5 in the area of the regions 15. The base zone 5 here has completely ionized boron atoms, ie all holes are here at the energy level E _{V of} the valence band. Palladium atoms are also provided, but are only partially ionized. The energy levels of boron and palladium are designated E _palladium and E _boron .

Fig. 4 shows the doping concentrations of the semiconductor device corresponding to Fig. 1 along the line CD. It can be seen that the electrically active total doping Nges in the body zone 5 , that is to say in the range between x1 and x2, results from the sum of the doping of the boron background doping Nb and the ionized palladium atoms Npa.

If a single parasitic bipolar transistor responds "prematurely" to holes generated by a breakthrough, the resulting hole current in this cell leads to a local temperature increase. This increase in temperature goes hand in hand with a higher degree of ionization of the incompletely ionized dopants. Fig. 3 (b) shows that at a temperature of 150 ° C compared to room temperature (25 ° C) larger number of palladium atoms is ionized. The electrically active palladium doping Npa and thus the total amount N _total free charge carriers increase ( FIG. 4 (b)). This results in a reduction in the layer resistance in the body zone 5 . The aim is that despite increasing temperature, the current gain B is reduced, ie dB / dT <0 applies. The generally known relationship between current gain and temperature (dB / dT <0) is thereby broken.

With increasing current, more and more cells are now in the breakthrough and z. T. also in the response of the respective parasitic bipolar transistors. However, the hole current generated by breakthrough is distributed evenly over all cells of the cell array due to the regions 15 , as a result of which the current density in each cell can be kept low. A destruction of the semiconductor component caused by a too high current density in individual cell areas is thereby prevented.

If a breakthrough distribution that is as homogeneous as possible is sought, then the incompletely ionized elements are introduced in all body zones 5 with the same concentration as possible.

In an alternative embodiment (not shown in FIGS . 1 and 2), special areas of a semiconductor component, which are particularly at risk with regard to a voltage breakdown, could also be protected disproportionately. Such areas are e.g. B. the cells in the outer region of the cell field of a semiconductor device. All holes generated in the edge region of the semiconductor component are channeled through these edge cells, which naturally results in a much higher voltage drop in the body zones of these cells. Body zones of these marginal cells therefore advantageously have a higher concentration of incompletely ionized atoms, so that the parasitic bipolar effect compared to the cells in the interior of the cell field can be defused particularly effectively there.

This leads to a very high threshold voltage for the Cells in the border area of the cell field, however, exactly egg ne such application sought anyway. In a very The cells can be advantageously applied in the edge area the cell field may even be almost inactive, d. H. the stake tension of these cells is increased so much that in each Switching state of the semiconductor device from an electri Inactivity of these cells can be assumed. To this The way is the emission of charge carriers in the peripheral area  of the MOSFET and a related damage the edge area prevented.

In particular when used in lateral MOSFET structures (not shown in FIGS . 1 and 2), the invention could also be used to generate predetermined breakdown points in the semiconductor body. For example, no or only a small amount of incompletely ionized atoms could be arranged in some regions of the semiconductor body. When the temperature rises, these areas heat up much more quickly than the areas doped according to the invention due to the current flowing through them. If the current exceeds a predetermined limit, the lower-doped semiconductor layers "burn out" first. As a result, overload protection is provided.

Fig. 5 shows a partial section of a third embodiment example of a semiconductor device according to the invention, which is designed as an n-channel power D-MOSFET. The MOSFET in FIG. 5 is distinguished from that in FIG. 1 in that a weakly n-doped drift zone 20 is arranged between the p-doped body zones 5 and the heavily n-doped drain zone 4 , which even extends to the surface 2 can be enough.

Fig. 6 shows a fourth embodiment of a semiconductor device according to the invention, which is designed as an n-channel power MOSFET according to the principle of charge carrier compensation. The MOSFET in FIG. 6 is distinguished from that in FIG. 5 in that the drift zone is designed as a compensation layer 21 . The compensation layer 21 , which has the function of the drift path in a compensation component and thus serves to receive a blocking voltage, has alternatingly arranged doping regions 22 , 23 of both conductivity types which form the compensation structure. The p-doped regions 22 are often also referred to as clearance zones, while the n-doped areas 23 are referred to as complementary clearance zones. The structure and operation of such compensation components is widely known and is described, for example, in US Pat. Nos. 5,216,275 and 5,754,310 as well as in WO 97/29518, DE 43 09 764 C2 and DE 198 40 032 C1. The subject matter is hereby fully incorporated into the present patent application.

In FIG. 6, the depletion zones 22 and Komplementärausräum zones 23 of the compensation layer 21 is not at the rear drain region 4 is connected, that is, between the zones 22, 23 is still a weakly n-doped drift region 24. The zones 22 , 23 are thus designed to be more or less floating in the compensation layer 21 . However, it should be pointed out that these zones 22 , 23 can of course also be connected to the drain zone 4 . In addition, the zones 22 , 23 are adjusted to the grid of the cell array, but a non-cell array-adjusted arrangement of these zones 22 , 23 would also be conceivable.

Fig. 7 shows a partial section of a fifth exemplary embodiment of a semiconductor device according to the invention. The semiconductor component is designed here as an integrated resistor.

The resistor has a semiconductor body 1 in which a weakly n-doped resistance layer 30 is embedded. The resistance layer 30 has a phosphorus background doping and selenium as an incompletely ionized element 17 (circles). Furthermore, in the semiconductor body 1 min at least two heavily n-doped, each adjacent to the resistance layer 30 contact terminal zones 31 , 32 are embedded, which are each contacted with contact electrodes 33 , 34 with low resistance.

The specific ohmic resistance ρ of such a resistance layer 30 is generally more or less strongly temperature-dependent and satisfies the following relationship:

where with σ the electrical conductivity, with q the elements Tar load, with µ and with N the mobility or the number the free, d. H. ionized charge carrier.

The number N of free charge carriers, as he already mentioned, increases with increasing temperature T. Underlying a doping concentration of 1.10 ¹⁵ cm ^{-3 for} both selenium and phosphorus, there is an increase in the ionized charge carriers by about 50% in the temperature range T = 25 ° C-150 ° C (see Fig. 8). The energy level for selenium was assumed to be 0.25 eV and for phosphorus 0.045 eV. FIG. 8 also shows that in the event that phosphorus is completely ionized at room temperature (25.degree. C.), which can be assumed, selenium has a degree of ionization of approximately 20%. Fig. 8 can also be seen that the temperature dependence of the total ionized dopant atoms increases sharply with an increasing proportion of selenium.

The mobility µ is also temperature-dependent and is sufficient according to SM Sze, "Physics of Semiconductor Devices", p. 29, 2nd edition, J. Wiley & Sons following relationship:

Here µ _n denotes the mobility of the ionized selenium and phosphorus ions. Taking into account equations (1) and (2), the curves given in FIG. 9 result for the specific ohmic resistance ρ (normalized to room temperature) as a function of the temperature T. A denotes the curve for a resistance structure which is doped exclusively with phosphorus. Curve B denotes a layer doped according to the invention according to FIG. 7, the same absolute doping concentrations being used as the basis for both curves.

It can be seen that in the temperature range T = 25 ° C-150 ° C the standardized specific resistance ρ (T) / ρ (25 ° C) is only about that Magnified 1.8 times while viewing a known one Structure enlarged by more than 2.3 times.

Curve B shows the case where selenium and phosphorus are in the same Concentration ratios exist. In the event that the Proportion of selenium is increased or in extreme cases eventually selenium is used, the gra decreases serves the resistance curve further or could be sufficient high selenium concentration and / or in the case of a very low even become negative due to the degree of ionization.

The invention is not limited to the execution examples according to FIGS. 1, 2, 5 to 7. Much more can be given there, for example, by exchanging the conductivity types n for p and vice versa and by varying the doping concentration, a large number of new component variants.

In the above exemplary embodiments, ver tical semiconductor devices described. however be the invention not on vertical semiconductor devices limited, but could be adjusted accordingly of the structures also apply to lateral semiconductor components the. The invention was further based on MOSFET with cells structure described, but it is with discrete semi-lead terbauelemente equally applicable.

In summary, it can be stated that the one bring doping elements with incomplete ionisa tion in equally doped semiconductor regions in complete turnaround  a known component from known semiconductor components can be given in which the active doping in this Areas with increasing temperature increases, whereby the spe tic resistance of this doping with increasing tempera tur weaker increases or even decreases.

The present invention has been accomplished based on the foregoing Be spelled out the principle of the invention and to explain its practical application as best as possible, however the present invention can be within the scope of the expert appropriate actions and knowledge.  

LIST OF REFERENCE NUMBERS

1

Semiconductor body

2

first surface, disc front

3

second surface, disc back

4

drain region

5

Body zone

6

source zone

7

intermediate zone

8th

gate electrode

9

Dielectric, gate oxide

10

canal zone

11

Source electrode, source metallization

12

Drain electrode, drain metallization

13

protective oxide

15

Areas in the body zone with incompletely ionized elements

16

p-doping elements with incomplete ionization (crosses)

17

n-doping elements with incomplete ionization (circles)

20

drift region

21

compensation zone

22

p-doped area, clearing zones

23

n-doped area, complementary clearance zones

24

drift region

30

doped resistance layer

31

.

32

Contact connection zones

33

.

34

contact electrodes
D drain connection
G gate connection
S source connection

Claims (14)

1. Semiconductor component with at least one semiconductor layer ( 5 , 30 ) of the first conductivity type embedded in a semiconductor body ( 1 ), characterized in that the first semiconductor layer ( 5 , 30 ) has at least partially dopants ( 16 , 17 ) of the first power type which are incompletely ionized at room temperature and their degree of ionization increases with increasing temperature. 2. A semiconductor component arranged in a semiconductor body ( 1 ) and controllable by field effects,
with at least one source zone ( 6 ) and with at least one drain zone ( 3 ) of the respective second conduction type,
with at least one body zone ( 5 ) of the first line type arranged between the source zone ( 4 ) and drain zone ( 3 ),
with at least one gate electrode ( 8 ), via which a channel zone ( 10 ) can be formed in the body zone ( 5 ) when a gate potential is applied to the gate electrode ( 8 ),
characterized,
that the body zone ( 5 ) has at least partially dopants ( 16 ) of the first power type which are only partially ionized at room temperature and whose degree of ionization increases with increasing temperature. 3. A semiconductor device according to claim 2, characterized in that
that the dopants with incomplete ionization ( 16 ) are arranged in a first region ( 15 ) of the body zone ( 5 ),
wherein the first region ( 15 ) is distant from the channel zone ( 10 ). 4. A semiconductor device according to any one of claims 1 or 2, characterized in that the dopants with incomplete ionization (16, 17) are distributed largely evenly within the semiconductor layer (5, 30) and / or the body zone (5). 5. Semiconductor component according to one or more of the preceding claims, characterized in that the semiconductor layer ( 5 , 30 ) and / or the body zone ( 5 ) and / or the first region ( 15 ) as doping exclusively dopants with incomplete ionization ( 16 , 17 ). 6. Semiconductor component according to one or more of the preceding claims, characterized in that the semiconductor layer ( 5 , 30 ) and / or the body zone ( 5 ) has a p-doping and that the dopant ( 16 ) is palladium with incomplete ionization. 7. Semiconductor component according to one or more of the preceding claims, characterized in that the semiconductor layer ( 5 , 30 ) and / or the body zone ( 5 ) has an n-doping and that the dopant ( 17 ) with incomplete ionization is selenium. 8. Semiconductor component according to one or more of the preceding claims, characterized in that the semiconductor component consists of a plurality of individual transistors arranged in cells of a cell field, which are connected in parallel over their load paths, which can be controlled via a common control (G) and which thus define an active area, a second area being present in the cell field, in which the doping concentration of the dopants with incomplete ionization ( 16 , 17 ) is higher than in the other areas of the cell field. 9. The semiconductor component according to one or more of the preceding claims, characterized in that the semiconductor component has an active area which contributes to the current flow and an edge region, via which the field lines are guided in a defined manner out of the semiconductor body ( 1 ) when a voltage is applied to the semiconductor component , wherein the doping concentration of the dopants with incomplete ionization ( 16 , 17 ) is lower in the edge area than in the active area. 10. The semiconductor component of claim 9, characterized in that the cells in the edge region of the cell field have a lower doping concentration of the dopants with incomplete ionization ( 16 , 17 ). 11. A semiconductor device according to one or more of the preceding claims, characterized in that the semiconductor body ( 1 ) is made of crystalline silicon. 12. Semiconductor device according to one or more of the foregoing existing claims, characterized,  that the semiconductor device as a MOSFET - in particular as Power MOSFET - or is designed as an IGBT. 13. Semiconductor component according to one or more of the claims Chen 1-11, characterized, that the semiconductor device as an integrated resistor is trained. 14. Semiconductor component according to one or more of the claims Chen 1-11, characterized, that the semiconductor device as a trimming diode, as a trimming resistor stood or is designed as a Zener diode.