DE10011547C2 - Thermally stable layer system for reflection of radiation in the extreme ultraviolet spectral range (EUV) - Google Patents
Thermally stable layer system for reflection of radiation in the extreme ultraviolet spectral range (EUV)Info
- Publication number
- DE10011547C2 DE10011547C2 DE2000111547 DE10011547A DE10011547C2 DE 10011547 C2 DE10011547 C2 DE 10011547C2 DE 2000111547 DE2000111547 DE 2000111547 DE 10011547 A DE10011547 A DE 10011547A DE 10011547 C2 DE10011547 C2 DE 10011547C2
- Authority
- DE
- Germany
- Prior art keywords
- layer system
- layer
- reflection
- euv
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 230000005855 radiation Effects 0.000 title claims description 6
- 230000003595 spectral effect Effects 0.000 title claims description 5
- 230000004888 barrier function Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- JAGQSESDQXCFCH-UHFFFAOYSA-N methane;molybdenum Chemical compound C.[Mo].[Mo] JAGQSESDQXCFCH-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910039444 MoC Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physical Vapour Deposition (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
Die Erfindung betrifft ein Schichtsystem nach dem Oberbe griff des Anspruchs 1.The invention relates to a layer system according to the Oberbe handle of claim 1.
Optische Bauelemente für die Reflexion von Strahlung im extrem ultravioletten Spektralbereich (EUV: 10 nm . . . 100 nm) können durch Dünnschichtsysteme reali siert werden, die im allgemeinen aus etwa 40-60 auf einem Substrat übereinanderliegenden Dünnschichtpaa ren bestehen. Eine geringere Anzahl von Paaren führt zu einem niedrigeren Reflexionswert, während eine hö here Anzahl aufgrund der Absorption der Strahlung keine weitere Steigerung des Reflexionswertes ergibt. Ein beispielhafter Wert für die Dicke eines Schicht paares liegt bei 6,8 nm. Optical components for the reflection of radiation in the extremely ultraviolet spectral range (EUV: 10 nm , , , 100 nm) can be achieved with thin film systems be generally based on around 40-60 a superimposed thin-film pair ren exist. A smaller number of pairs leads to a lower reflection value, while a higher Here number due to the absorption of the radiation no further increase in the reflection value results. An exemplary value for the thickness of a layer Paares is 6.8 nm.
Die Schichtsysteme werden hauptsächlich durch PVD- Verfahren hergestellt, wobei sowohl Sputter-, Elek tronenstrahl-Verdampfungs- als auch Laser-Ablations- Verfahren eingesetzt werden können. CVD-Verfahren wurden ebenfalls erfolgreich zur Herstellung derarti ger Schichtsysteme angewendet.The layer systems are mainly made of PVD Process produced, both sputtering, elec electron beam evaporation as well as laser ablation Procedures can be used. CVD have also been successfully used to produce such ger layer systems applied.
Ein Dünnschichtpaar besteht im allgemeinen aus zwei Materialien mit unterschiedlichen optischen Konstan ten, wobei das eine Material eine möglichst geringe Absorption ("Spacer"), das andere Material dagegen eine große Absorption ("Absorber") aufweisen sollten. Die Auswahl der Dünnschichtmaterialien ist vor allem von der Arbeitswellenlänge des zu realisierenden op tischen Bauelementes abhängig (E. Spiller: Low-loss reflection coatings using absorbing materials, Appl. Phys. Lett., 20, S. 365-367, 1972). So sind auf Sili zium basierende Dünnschichtsysteme für einen Wellen längenbereich jenseits der Si-L-Absorptionskante von 12,4 nm bis ca. 35 nm anwendbar. Für diesen Wellen längenbereich hat sich weiterhin seit über 10 Jahren Molybdän als "Absorber" etabliert, so daß weltweit derzeit fast ausschließlich Mo/Si-Schichtsysteme in diesem Spektralbereich zur Anwendung gelangen (Spil ler, SoftX-Ray Optics, SPIE Optical Engenieering Press, Bellingham, 1994).A thin film pair generally consists of two Materials with different optical constants ten, the one material being as low as possible Absorption ("Spacer"), the other material against it should have a large absorption ("absorber"). The choice of thin film materials is above all on the working wavelength of the op table component dependent (E. Spiller: Low-loss reflection coatings using absorbing materials, Appl. Phys. Lett., 20, pp. 365-367, 1972). So are on sili Zium based thin film systems for one wave length range beyond the Si-L absorption edge of 12.4 nm to approx. 35 nm applicable. For these waves length range has continued for over 10 years Molybdenum established as an "absorber", so that worldwide currently almost exclusively Mo / Si layer systems in this spectral range are used (Spil ler, SoftX-Ray Optics, SPIE Optical Engenieering Press, Bellingham, 1994).
Eine wichtige Charakteristik von im allgemeinen als Spiegel verwendeten Schichtsystemen für den EUV- Spektralbereich ist die maximale Reflexion. Der welt weit höchst gemessene Reflexionswert liegt derzeit bei RMo/Si = 68,7% bei 13,4 nm (C. Montcalm, J. A. Folta, S. P. Vernon: Pathways to high reflectance Mo/Si multilayer coatings for extreme-untraviolet li thography, 4. International Conference on The Physics of X-Ray Multilayer Structures, 1.-5. März 1998, Breckenridge, Colorado, USA).An important characteristic of layer systems generally used as mirrors for the EUV spectral range is the maximum reflection. The world's highest measured reflection value is currently R Mo / Si = 68.7% at 13.4 nm (C. Montcalm, JA Folta, SP Vernon: Pathways to high reflectance Mo / Si multilayer coatings for extreme-untraviolet li thography, 4th International Conference on The Physics of X-Ray Multilayer Structures, March 1-5, 1998, Breckenridge, Colorado, USA).
Dies entspricht etwa 90% der theoretisch erreichba ren Reflexion Rtheor, die in Abhängigkeit von dem zu grundeliegenden Modell 76,7% bei 13,4 nm beträgt.This corresponds to approximately 90% of the theoretically achievable reflection R theor , which is 76.7% at 13.4 nm, depending on the model to be used.
Für viele Anwendungen von EUV-Spielgeln ist neben der
Reflexion auch eine möglichst hohe Stabilität der
Schichtsysteme gegenüber thermischer Belastung erfor
derlich. Da Mo/Si-Schichtsysteme oberhalb einer Tem
peratur von ca. 300°C aufgrund von Interdiffusions-
und Kristallisationseffekten an den Molybdän-Sili
zium-Schichtgrenzflächen degradiert werden, wie es bspw. in der US 5 319 695 beschrieben wird, sind Sy
steme dieser Materialpaarung nur bis zu einer maxima
len Arbeitstemperatur von 300°C einsetzbar. Bei hohen
Photonenenergien oder durch äußere thermische Bela
stung werden die Schichtsysteme in der Praxis jedoch
sehr oft höheren Temperaturen ausgesetzt. Besonders
gilt dies beispielsweise für Kollektorspiegel in un
mittelbarer Nähe der EUV-Strahlungsquelle. Es wurden
bisher zwei Wege verfolgt, Mo/Si-Schichtsysteme auch
bei Temperaturen oberhalb 300°C anzuwenden, nämlich:
For many applications of EUV game gel, in addition to reflection, the highest possible stability of the layer systems against thermal stress is required. Since Mo / Si layer systems are degraded above a temperature of approx. 300 ° C. due to interdiffusion and crystallization effects at the molybdenum-silicon layer interfaces, as described, for example, in US Pat. No. 5,319,695, systems are these Material pairing can only be used up to a maximum working temperature of 300 ° C. At high photon energies or due to external thermal stress, however, the layer systems are very often exposed to higher temperatures in practice. This applies in particular to collector mirrors in the immediate vicinity of the EUV radiation source, for example. So far, two ways have been followed to use Mo / Si layer systems even at temperatures above 300 ° C, namely:
- 1. intensive Substratkühlung und1. intensive substrate cooling and
- 2. Nutzung von ultradünnen Kohlenstoff-Barriere schichten zwischen Molybdän und Silizium zur Vermeidung von Interdiffusions- und Kristalli sationseffekten an der Molybdän-Silizium-Grenz fläche (H. Takenaka, T. Kawumara: Thermal sta bility of Soft X-Ray Mirrors, J. of Electr. Spectr. and Relat. Phen., 80, S. 381-384, 1996)2. Use of ultra-thin carbon barrier layers between molybdenum and silicon Avoidance of interdiffusion and crystalli effects on the molybdenum-silicon boundary area (H. Takenaka, T. Kawumara: Thermal sta bility of Soft X-Ray Mirrors, J. of Electr. Spectr. and Relat. Phen., 80, pp. 381-384, 1996)
Während eine Substratkühlung einen erhöhten apparati ven Gesamtaufwand erfordert, weisen Mo/Si-Schichtsysteme mit ultradünnen Kohlenstoff-Barriereschichten eine um ca. 5% verringerte theoretisch erreichbare maximale Reflexion im Vergleich zu reinen Mo/Si- Schichtsystemen auf.During a substrate cooling an increased apparatus ven total effort required, have Mo / Si layer systems with ultra-thin carbon barrier layers a theoretically achievable reduction of about 5% maximum reflection compared to pure Mo / Si Layer systems.
Es ist daher die Aufgabe der vorliegenden Erfindung, ein thermisch stabiles Schichtssystem zur Reflexion von Strahlung im extremen ultravioletten Spektralbe reich anzugeben, bei dem der Reflexionswert möglichst hoch ist.It is therefore the object of the present invention a thermally stable layer system for reflection of radiation in the extreme ultraviolet spectrum rich to state where the reflection value is as high as possible.
Diese Aufgabe wird erfindungsgemäß gelöst durch das im kennzeichnenden Teil des Anspruchs 1 angegebene Merkmal. Vorteilhafte Weiterbildungen des erfindungs gemäßen Schichtsystems ergeben sich aus den Unteran sprüchen.This object is achieved by the specified in the characterizing part of claim 1 Characteristic. Advantageous further developments of the invention according layer system result from the Unteran claims.
Dadurch, daß die Barriereschicht aus Molybdäncarbid (Mo2C) besteht, wird ein Schichtsystem erhalten, des sen Degradation infolge thermischer Belastung erst bei einer Temperatur oberhalb 500°C beginnt, wobei die durch die Mo2C-Barriereschicht bedingte Herabset zung des theoretisch erreichbaren Reflexionswertes bei einer Dicke der Barriereschicht von 0,6 nm nur etwa 1% beträgt.The fact that the barrier layer consists of molybdenum carbide (Mo 2 C), a layer system is obtained, the sen degradation due to thermal stress only begins at a temperature above 500 ° C, the reduction due to the Mo 2 C barrier layer of the theoretically achievable Reflection value with a thickness of the barrier layer of 0.6 nm is only about 1%.
Zur Herstellung von Mo/Mo2C/Si/Mo2C-Schicht-Systemen werden vorteilhaft PVD-Verfahren angewendet, wobei jeweils zwischen Mobybdän und Silizium eine etwa 0,6 nm dicke Mo2C-Barriereschicht abgeschieden wird. Die Gesamtdicke einer Molybdän- und einer Siliziumschicht beträgt vorzugsweise etwa 6,8 nm. Jedoch sind die Dicke der Einzelschichten sowie das Design des herzu stellenden Mo/Mo2C/Si/Mo2C-Schichtsystems abhängig von den Anforderungen, die die jeweils bestimmungsge mäße Anwendung an das Schichtsystem stellt. Die Tech nologie zur Herstellung der Mo/Mo2C/Si/Mo2C-Schicht systeme wird vom Beschichtungsprozeß bestimmt.For the production of Mo / Mo 2 C / Si / Mo 2 C layer systems, PVD methods are advantageously used, with an approximately 0.6 nm thick Mo 2 C barrier layer being deposited between mobybdenum and silicon. The total thickness of a molybdenum and a silicon layer is preferably about 6.8 nm. However, the thickness of the individual layers and the design of the Mo / Mo 2 C / Si / Mo 2 C layer system to be produced are dependent on the requirements which determine the respective appropriate application to the layer system. The technology for the production of the Mo / Mo 2 C / Si / Mo 2 C layer systems is determined by the coating process.
Zur Beurteilung der thermischen Stabilität eines Mo/
Mo2C/Si/Mo2C-Schichtsystems wurden mehrere
Mo/Mo2C/Si/Mo2C-Spiegel für eine Arbeitswellenlänge
von 13,3 nm realisiert. Die Herstellung dieser Spie
gel erfolgte mit der DC-Magnetron-Sputter-Techno
logie. Der Beschichtungsprozeß war durch folgende Pa
rameter charakterisiert:
To assess the thermal stability of a Mo / Mo 2 C / Si / Mo 2 C layer system, several Mo / Mo 2 C / Si / Mo 2 C mirrors were implemented for a working wavelength of 13.3 nm. These mirrors were manufactured using DC magnetron sputtering technology. The coating process was characterized by the following parameters:
- - Anzahl der Mo/Mo2C/Si/Mo2C-Schichten: 50- Number of Mo / Mo 2 C / Si / Mo 2 C layers: 50
- - Substrat: Si-(111)-Wafer- Substrate: Si ( 111 ) wafer
- - Arbeitsgas: Argon- Working gas: argon
- - Arbeitsdruck: 0,266 Pa- Working pressure: 0.266 Pa
- - Sputterleistung Molybdän: 150 W- Molybdenum sputtering power: 150 W.
- - Sputterleistung Silizium: 200 W- Sputtering power silicon: 200 W.
- - Sputterleistung Molybdäncarbid: 200 W- Molybdenum carbide sputtering power: 200 W.
- - Sputterrate Molybdän: 0,55 nm/s- Molybdenum sputtering rate: 0.55 nm / s
- - Sputterrate Silizium: 0,50 nm/s- Sputter rate silicon: 0.50 nm / s
- - Sputterrate Molybdäncarbid: 0,6 nm/s- Molybdenum carbide sputtering rate: 0.6 nm / s
- - Substratvorspannung: 100 V- substrate bias: 100 V
Die bei diesem Schichtsystem maximal gemessene Refle xion betrug R = 59,9%. Die so hergestellten Mo/Mo2C/Si/Mo2C-Spiegel wurden nach dem Beschich tungsprozeß unter Vakuumbedingungen schrittweise bis zu einer Temperatur von 700°C erhitzt. In Auswertung dieser Versuche ergab sich eine thermische Stabilität des Mo/Mo2C/Si/Mo2C-Schichtsystems bis zu einer Tem peratur von 500°C.The maximum measured reflection in this layer system was R = 59.9%. The Mo / Mo 2 C / Si / Mo 2 C mirrors thus produced were gradually heated to a temperature of 700 ° C. after the coating process under vacuum conditions. The evaluation of these experiments showed a thermal stability of the Mo / Mo 2 C / Si / Mo 2 C layer system up to a temperature of 500 ° C.
Claims (5)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE20023408U DE20023408U1 (en) | 2000-02-28 | 2000-02-28 | Thermally stable layer system used for reflecting extreme UV rays consists of layer pairs made up of a barrier layer of molybdenum carbide between molybdenum layer and a silicon layer |
| DE2000111547 DE10011547C2 (en) | 2000-02-28 | 2000-02-28 | Thermally stable layer system for reflection of radiation in the extreme ultraviolet spectral range (EUV) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2000111547 DE10011547C2 (en) | 2000-02-28 | 2000-02-28 | Thermally stable layer system for reflection of radiation in the extreme ultraviolet spectral range (EUV) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE10011547A1 DE10011547A1 (en) | 2001-09-06 |
| DE10011547C2 true DE10011547C2 (en) | 2003-06-12 |
Family
ID=7634130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2000111547 Withdrawn - After Issue DE10011547C2 (en) | 2000-02-28 | 2000-02-28 | Thermally stable layer system for reflection of radiation in the extreme ultraviolet spectral range (EUV) |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE10011547C2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008002403A1 (en) | 2008-06-12 | 2009-12-17 | Carl Zeiss Smt Ag | Method for producing a multilayer coating, optical element and optical arrangement |
| US7920323B2 (en) | 2004-12-23 | 2011-04-05 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Thermally stable multilayer mirror for the EUV spectral region |
| DE102013207751A1 (en) | 2013-04-29 | 2014-10-30 | Carl Zeiss Smt Gmbh | Optical element with a multilayer coating and optical arrangement with it |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006006283B4 (en) | 2006-02-10 | 2015-05-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermally stable multilayer mirror for the EUV spectral range |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5319695A (en) * | 1992-04-21 | 1994-06-07 | Japan Aviation Electronics Industry Limited | Multilayer film reflector for soft X-rays |
| US5433988A (en) * | 1986-10-01 | 1995-07-18 | Canon Kabushiki Kaisha | Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray |
| US6011646A (en) * | 1998-02-20 | 2000-01-04 | The Regents Of The Unviersity Of California | Method to adjust multilayer film stress induced deformation of optics |
-
2000
- 2000-02-28 DE DE2000111547 patent/DE10011547C2/en not_active Withdrawn - After Issue
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5433988A (en) * | 1986-10-01 | 1995-07-18 | Canon Kabushiki Kaisha | Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray |
| US5319695A (en) * | 1992-04-21 | 1994-06-07 | Japan Aviation Electronics Industry Limited | Multilayer film reflector for soft X-rays |
| US6011646A (en) * | 1998-02-20 | 2000-01-04 | The Regents Of The Unviersity Of California | Method to adjust multilayer film stress induced deformation of optics |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7920323B2 (en) | 2004-12-23 | 2011-04-05 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Thermally stable multilayer mirror for the EUV spectral region |
| DE102008002403A1 (en) | 2008-06-12 | 2009-12-17 | Carl Zeiss Smt Ag | Method for producing a multilayer coating, optical element and optical arrangement |
| DE102013207751A1 (en) | 2013-04-29 | 2014-10-30 | Carl Zeiss Smt Gmbh | Optical element with a multilayer coating and optical arrangement with it |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10011547A1 (en) | 2001-09-06 |
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| OP8 | Request for examination as to paragraph 44 patent law | ||
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