DD96852A1 - - Google Patents

Info

Publication number
DD96852A1
DD96852A1 DD162824A DD16282472A DD96852A1 DD 96852 A1 DD96852 A1 DD 96852A1 DD 162824 A DD162824 A DD 162824A DD 16282472 A DD16282472 A DD 16282472A DD 96852 A1 DD96852 A1 DD 96852A1
Authority
DD
German Democratic Republic
Application number
DD162824A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DD162824A priority Critical patent/DD96852A1/xx
Priority to DE2300021A priority patent/DE2300021A1/de
Priority to FR7308398A priority patent/FR2183678A1/fr
Publication of DD96852A1 publication Critical patent/DD96852A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DD162824A 1972-05-09 1972-05-09 DD96852A1 (enrdf_load_html_response)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DD162824A DD96852A1 (enrdf_load_html_response) 1972-05-09 1972-05-09
DE2300021A DE2300021A1 (de) 1972-05-09 1973-01-02 Vorrichtung zum epitaktischen abscheiden von kristallinem material, insbesondere halbleitermaterial
FR7308398A FR2183678A1 (en) 1972-05-09 1973-03-08 Epitaxial crystalline material deposition - esp of semiconductor from vapour phase in quartz glass tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD162824A DD96852A1 (enrdf_load_html_response) 1972-05-09 1972-05-09

Publications (1)

Publication Number Publication Date
DD96852A1 true DD96852A1 (enrdf_load_html_response) 1973-04-12

Family

ID=5486478

Family Applications (1)

Application Number Title Priority Date Filing Date
DD162824A DD96852A1 (enrdf_load_html_response) 1972-05-09 1972-05-09

Country Status (3)

Country Link
DD (1) DD96852A1 (enrdf_load_html_response)
DE (1) DE2300021A1 (enrdf_load_html_response)
FR (1) FR2183678A1 (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
IT1209570B (it) * 1984-07-19 1989-08-30 Lpe Spa Perfezionamento nei reattori epitassiali.

Also Published As

Publication number Publication date
FR2183678B3 (enrdf_load_html_response) 1976-03-05
DE2300021A1 (de) 1973-11-22
FR2183678A1 (en) 1973-12-21

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