DD226431A1 - OPTOELECTRONIC SEMICONDUCTOR ELEMENT - Google Patents

OPTOELECTRONIC SEMICONDUCTOR ELEMENT Download PDF

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Publication number
DD226431A1
DD226431A1 DD26592884A DD26592884A DD226431A1 DD 226431 A1 DD226431 A1 DD 226431A1 DD 26592884 A DD26592884 A DD 26592884A DD 26592884 A DD26592884 A DD 26592884A DD 226431 A1 DD226431 A1 DD 226431A1
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DD
German Democratic Republic
Prior art keywords
optoelectronic semiconductor
bonding
strip
semiconductor component
leads
Prior art date
Application number
DD26592884A
Other languages
German (de)
Inventor
Peter Klampfl
Klaus-Dieter Gruner
Dieter Prietzsch
Original Assignee
Werk Fernsehelektronik Veb
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Werk Fernsehelektronik Veb filed Critical Werk Fernsehelektronik Veb
Priority to DD26592884A priority Critical patent/DD226431A1/en
Publication of DD226431A1 publication Critical patent/DD226431A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Led Device Packages (AREA)

Abstract

Die Erfindung ist anwendbar bei der Herstellung optoelektronischer Halbleiterbauelemente, wobei das Ziel der Erfindung darin besteht, die Zuverlaessigkeit von plastgekapselten optoelektronischen Halbleiterbauelementen nach Temperaturwechselbeanspruchungen zu erhoehen, und aufgabengemaess eine Stabilitaet im Kontaktbereich Chip und streifenfoermiger Zuleitung bei edelmetallarmen bzw. -freien Werkstoffkombinationen zu gewaehrleisten. Das Wesen der Erfindung liegt in der Anordnung von einem oder mehreren nichtleitenden Stabilisierungsstegen auf den Zuleitungen des Halbleiterbauelements. Fig. 1The invention is applicable in the production of optoelectronic semiconductor components, the aim of the invention being to increase the reliability of plast-encapsulated optoelectronic semiconductor devices after thermal cycling, and to ensure a stability in the contact area chip and strip-like supply line for low-noble or non-precious material combinations. The essence of the invention lies in the arrangement of one or more non-conductive stabilizing webs on the leads of the semiconductor device. Fig. 1

Description

Anwendungsgebiet der ErfindungField of application of the invention

Die Erfindung ist anwendbar bei der Herstellung optoelektronischer Halbleiterbauelemente.The invention is applicable in the manufacture of optoelectronic semiconductor devices.

Charakteristik der bekannten technischen LösungenCharacteristic of the known technical solutions

Aus dem Stand der Technik sind mehrere Lösungen bekannt, die sich mit der Stabilisierung des Bonddrahtes bei eingekapselten elektronischen Bauelementen befassen. In der OS 2 354 256 (DE) wird dargelegt, daß der Bonddraht zwischen der kontaktierenden Stelle des Halbleiterbauelements und der streifenförmigen Zuleitung durch einen isolierenden oder leitenden Stoff verstärkt wird. In der PS 159 484 (DD) wird die Schaffung einer elastischen Pufferzone aus Silikonkautschuk beschrieben, die den Einfluß der mechanischen Spannungen auf den Bonddraht reduzieren soll.Several solutions are known from the prior art, which are concerned with the stabilization of the bonding wire in encapsulated electronic components. In OS 2 354 256 (DE) it is stated that the bonding wire between the contacting point of the semiconductor component and the strip-shaped lead is reinforced by an insulating or conductive material. The PS 159 484 (DD) describes the creation of an elastic buffer zone of silicone rubber which is intended to reduce the influence of the mechanical stresses on the bonding wire.

Weitere Bemühungen zur Stabilisierung des Bonddrahtes, speziell bei edelmetallarmen bzw. -freien Bonddrähten auf edelmetallfreier Bondunterlage sind aus der Fachliteratur bekannt, weisen jedoch auf keine befriedigende technische Lösung hin.Further efforts to stabilize the bonding wire, especially in low-precious metal or -free bonding wires on precious metal-free bonding pad are known from the literature, but do not indicate a satisfactory technical solution.

Bei Einsatz derartiger Bonddrähte ergeben sich bei den optoelektronischen Halbleiterbauelementen hohe Ausfallraten bedingt durch thermische Belastungen nach dem Einkapselungsprozeß.The use of such bonding wires results in the optoelectronic semiconductor components high failure rates due to thermal stresses after the encapsulation process.

Ziel der ErfindungObject of the invention

Ziel der Erfindung ist die Erhöhung der Zuverlässigkeit von plastgekapselten optoelektronischen Halbleiterbauelementen, die nach dem Vergießen Temperaturwechselbeanspruchungen unterzogen werden.The aim of the invention is to increase the reliability of plast-encapsulated optoelectronic semiconductor devices which are subjected to thermal cycling after casting.

Darlegung des Wesens der ErfindungExplanation of the essence of the invention

Es besteht die Aufgabe, die Stabilität des Kontaktbereichs Chip und streifenförmiger Zuleitung bei edelmetallarmen- bzw. freien Werkstoffkombinationen zu gewährleisten.It is the task of ensuring the stability of the contact region chip and strip-shaped supply line in precious metal or free material combinations.

Die Aufgabe wurde dadurch gelöst, daß eine mechanische Stabilisierung der Trägerstreifen bzw. Zuleitungen mittels Steg oder Stege aus nichtleitendem Material erfolgt.The object was achieved in that a mechanical stabilization of the carrier strip or leads by means of web or webs made of non-conductive material.

Ausführungsbeispielembodiment

Auf metallischen Trägerstreifen, die galvanisch mit Glanznickel beschichtet sind, werden die Haibieiterchips 1, die rückseitig mit Leitkleber beauflagt sind, auf dem Trägerstreifen kontaktiert. Der zweite Kontakt wird mittels Drahtbrücke - Bonddraht 5 - von der Kontaktfläche des Halbleiterchips zur streifenförmigen Zuleitung des Trägerstreifens durch bekannte Bondverfahren hergestellt.On metallic carrier strips, which are galvanically coated with bright nickel, the Haibieiterchips 1, which are charged on the back with conductive adhesive, contacted on the carrier strip. The second contact is made by means of wire bridge - bonding wire 5 - from the contact surface of the semiconductor chip to the strip-shaped supply line of the carrier strip by known bonding methods.

Vor dem Einkapseln des optoelektronischen Halbleiterbauelements werden ein oder mehrere Stabilisierungsstege 2 unterhalb der Kontakt- bzw. Bondunterlage 3 im Einkapselungsbereich ein- oder beidseitig auf den Zuleitungen 4 aufgebracht.Before encapsulating the optoelectronic semiconductor component, one or more stabilizing webs 2 are applied below the contact or bonding pad 3 in the encapsulation region on one or both sides of the leads 4.

Nach dem Aufbringen des oder der Stabiiisierungsstege erfolgt der Verguß des optoelektronischen Halbleiterbauelements mit Gießharz.After the application of the or the Stabiiisierungsstege the casting of the optoelectronic semiconductor device is carried out with casting resin.

Die mit diesen Stabilisierungssteg oder -Stegen hergestellten optoelektronischen Halbleiter wurden Temperaturwechselbelastungen unterzogen und zeigten hierbei eine entsprechend dem Ziel der Erfindung geforderte Zuverlässigkeit.The optoelectronic semiconductors produced with this stabilizing bar or bars were subjected to thermal cycling and showed a reliability required in accordance with the aim of the invention.

Claims (3)

1. Optoelektronisches Halbleiterbauelement, gekennzeichnet dadurch, daß auf den Zuleitungen (4) des lichtemittierenden Halbleiters (1) ein oder mehrere nichtleitende Stabilisierungsstege (2) angeordnet werden.1. Optoelectronic semiconductor component, characterized in that on the leads (4) of the light-emitting semiconductor (1) one or more non-conductive stabilizing webs (2) are arranged. 2. Optoelektronisches Halbleiterbauelement nach Punkt 1, gekennzeichnet dadurch, daß der/die Stabilisierungsstege (2) ein- oder beidseitig auf den Zuleitungen (4) angeordnet, werden.2. Optoelectronic semiconductor component according to item 1, characterized in that the / the stabilizing webs (2) on one or both sides on the leads (4) are arranged. - 2 - öbS Erfindungsansprüche:- 2 - öbS claims for invention: 3. Optoelektronisches Halbleiterbauelement nach Punkt 1—2, gekennzeichnet dadurch, daß der oder die Stabilisierungsstege unterhalb der Kontakt- bzw. Bondunterlage (3) im Einkapselungsbereich angeordnet werden.3. Optoelectronic semiconductor component according to item 1-2, characterized in that the stabilizer or the stabilizing webs below the contact or bonding pad (3) are arranged in the encapsulation region. Hierzu 1 Seite ZeichnungenFor this 1 page drawings Anwendungsgebiet der ErfindungField of application of the invention Die Erfindung ist anwendbar bei der Herstellung optoelektronischer Halbleiterbauelemente. Charakteristik der bekannten technischen LösungenThe invention is applicable in the manufacture of optoelectronic semiconductor devices. Characteristic of the known technical solutions Aus dem Stand der Technik sind mehrere Lösungen bekannt, die sich mit der Stabilisierung des Bonddrahtes bei eingekapselten elektronischen Bauelementen befassen. In der OS 2 354 256 (DE) wird dargelegt, daß der Bonddraht zwischen der kontaktierenden Stelle des Halbleiterbauelements und der streifenförmigen Zuleitung durch einen isolierenden oder leitenden Stoff verstärkt wird. In der PS 159 484 (DD) wird die Schaffung einer elastischen Pufferzone aus Silikonkautschuk beschrieben, die den Einfluß der mechanischen Spannungen auf den Bonddraht reduzieren soll.Several solutions are known from the prior art, which are concerned with the stabilization of the bonding wire in encapsulated electronic components. In OS 2 354 256 (DE) it is stated that the bonding wire between the contacting point of the semiconductor component and the strip-shaped lead is reinforced by an insulating or conductive material. The PS 159 484 (DD) describes the creation of an elastic buffer zone of silicone rubber which is intended to reduce the influence of the mechanical stresses on the bonding wire. Weitere Bemühungen zur Stabilisierung des Bonddrahtes, speziell bei edelmetallarmen bzw. -freien Bonddrähten auf edelmetallfreier Bondunterlage sind aus der Fachliteratur bekannt, weisen jedoch auf keine befriedigende technische Lösung hin. Bei Einsatz derartiger Bonddrähte ergeben sich bei den optoelektronischen Halbleiterbauelementen hohe Ausfallraten bedingt durch thermische Belastungen nach dem Einkapselungsprozeß.Further efforts to stabilize the bonding wire, especially in low-precious metal or -free bonding wires on precious metal-free bonding pad are known from the literature, but do not indicate a satisfactory technical solution. The use of such bonding wires results in the optoelectronic semiconductor components high failure rates due to thermal stresses after the encapsulation process. Ziei der ErfindungZiei the invention Ziel der Erfindung ist die Erhöhung der Zuverlässigkeit von plastgekapselten optoelektronischen Halbleiterbauelementen, die nach dem Vergießen Temperaturwechselbeanspruchungen unterzogen werden.The aim of the invention is to increase the reliability of plast-encapsulated optoelectronic semiconductor devices which are subjected to thermal cycling after casting. Darlegung des Wesens der ErfindungExplanation of the essence of the invention Es besteht die Aufgabe, die Stabilität des Kontaktbereichs Chip und streifenförmiger Zuleitung bei edelmetallarmen- bzw. freien Werkstoffkombinationen zu gewährleisten.It is the task of ensuring the stability of the contact region chip and strip-shaped supply line in precious metal or free material combinations. Die Aufgabe wurde dadurch gelöst, daß eine mechanische Stabilisierung der Trägerstreifen bzw. Zuleitungen mittels Steg oder Stege aus nichtleitendem Material erfolgt.The object was achieved in that a mechanical stabilization of the carrier strip or leads by means of web or webs made of non-conductive material. Ausführungsbeispielembodiment Auf metallischen Trägerstreifen, die galvanisch mit Glanznickel beschichtet sind, werden die Halbleiterchips 1, die rückseitig mit Leitkleber beauflagt sind, auf dem Trägerstreifen kontaktiert. Der zweite Kontakt wird mittels Drahtbrücke - Bonddraht 5 - von der Kontaktfläche des Halbleiterchips zur streifenförmigen Zuleitung des Trägerstreifens durch bekannte Bondverfahren hergestellt.On metallic carrier strips, which are galvanically coated with bright nickel, the semiconductor chips 1, which are coated on the back with conductive adhesive, contacted on the carrier strip. The second contact is made by means of wire bridge - bonding wire 5 - from the contact surface of the semiconductor chip to the strip-shaped supply line of the carrier strip by known bonding methods. Vor dem Einkapseln des optoelektronischen Halbleiterbauelements werden ein oder mehrere Stabilisierungsstege 2 unterhalb der Kontakt- bzw. Bondunterlage 3 im Einkapselungsbereich ein- oder beidseitig auf den Zuleitungen 4 aufgebracht.Before encapsulating the optoelectronic semiconductor component, one or more stabilizing webs 2 are applied below the contact or bonding pad 3 in the encapsulation region on one or both sides of the leads 4. Nach dem Aufbringen des oder der Stabilisierungsstege erfolgt der Verguß des optoelektronischen Halbleiterbauelements mit Gießharz.After the application of the stabilizing webs, the encapsulation of the optoelectronic semiconductor component takes place with casting resin. Die mit diesen Stabilisierungssteg oder -Stegen hergestellten optoelektronischen Halbleiter wurden Temperaturwechselbelastungen unterzogen und zeigten hierbei eine entsprechend dem Ziel der Erfindung geforderte Zuverlässigkeit.The optoelectronic semiconductors produced with this stabilizing bar or bars were subjected to thermal cycling and showed a reliability required in accordance with the aim of the invention.
DD26592884A 1984-08-02 1984-08-02 OPTOELECTRONIC SEMICONDUCTOR ELEMENT DD226431A1 (en)

Priority Applications (1)

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DD26592884A DD226431A1 (en) 1984-08-02 1984-08-02 OPTOELECTRONIC SEMICONDUCTOR ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD26592884A DD226431A1 (en) 1984-08-02 1984-08-02 OPTOELECTRONIC SEMICONDUCTOR ELEMENT

Publications (1)

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DD226431A1 true DD226431A1 (en) 1985-08-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4214792A1 (en) * 1992-05-04 1993-11-11 Telefunken Microelectron Method for producing an optoelectronic coupling element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4214792A1 (en) * 1992-05-04 1993-11-11 Telefunken Microelectron Method for producing an optoelectronic coupling element

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