DD161215A1 - MANUFACTURING METHOD FOR DENSITY LAYER STRUCTURES, ESPECIALLY FROM A HIGH II B HIGH VI COMPOUNDS - Google Patents

Abstract

The production process for thin-film structures, in particular of zinc chalcogenides for EL displays in a flat matrix arrangement, aims at a balanced composition, complete bond saturation, uniform layer adhesion, low-tension layer structure and uniform threshold voltage and light intensity, in particular when cheap substrates are used. The preparation, precipitation and setting of the constituents of the EL-thin layer and the activation of the luminescent-center-forming elements is a large-scale, economical and reliable solution. Zn, Mn and S evaporated from sources (17, 19) (Figure 3) form a sorption film (20) on a substrate (1) of power glass covered with an In2O3-SnO2 conductor and an insulating layer of -ALOxNy- , The cooled substrate (1) is moved over a window (26) in the recipient (18) and the sorption film (20) is subjected to irradiation (27) of N 2 gas pulse lasers which produce a uniform light flash pattern via a holographic plate (28) , The absorbed heat leads to the re-evaporation of excessively proportioned elements and to the equilibration of the bonds of balanced elements. Fig. 3

Description

ν »» / "f

Title of the invention;

Production process for thin-film structures, in particular of A-B compound semiconductors

Fields of application of the invention

5 "The invention relates to a process for the preparation of Duhhsch ic fit structure s, particular ^{'AU3: Α Χ-Χ Β} -Verblnduhgs- -halblei tern'-for Slektroluniineszensanzelgen The invention shall look to the pre-Run, reflected and thermal bonding of components. A ^ - ¹ B ^ layer and the

Yq ren doping with selected foreign substances.

To bond semiconductors used in non-epitaxial thin films for. Excitable electroluminescence include Zirtk sulfide ", zinc selenide ,, zinc telluride and corresponding compounds fertilize the Kadsiums" This compound semiconductors

ij impurities such as manganese, rare earth metals or similar activators and co-activators added.

The application of the method according to the invention is particularly advantageous for the production of flat matrix display arrangements, for the display of numerals, text fields, patterns of information, still and moving images.

They are used in measuring devices, input and output units of computers and in televisions in data output, as a character recorder and as a screen.

Characteristic of the known technical solutions

In the hitherto proposed methods of producing luminescent solid-state coatings on substrates with a

J J A / 3 5

In addition to other conditions, high-conductive coatings also include the annealing and forming program: the active layer plays a decisive role in the subsequent improvement of the luminescence yield. and stability ··. ZnS layers containing wear promoters such as Cu, Il o "a" and halogens as goaktivator.en are, according to the method described in GB-PS 7 & 8,804 between 2CO - 40O ⁰ C and after in the U.S. Patent 5,802,344. between 470 - TQOO ⁰ C for longer. Time annealed. The presence of oxygen in the annealing gas is advantageous for the Saisslanslntensltät.

ZtL is one of the most widely used coating processes for substrates containing luminescent material.

According to .UE-OS 2 * 254 * 044, the powder phosphors are subjected to an electric forcing process using certain gettering processes. In this process, an external one is applied to the two electrodes of the 2L condentate system applied electric DC voltage gradually increased from tO to tOO Y * the elements of the condenser system are thereby loaded with T to 2. W verrb-essert terms of Lumineszeneeffizienz. This mechanism is based, leads to a drifting OCE Cn activators in high electric PEiD and , zrur A-us-education of high-resistance thin-films.

* Implantation described in an in DE-AS 2227-957 ': · is moved to damp the evaporation of Zinksulf ilais idf "and a simultaneous or alternating injection of ^Ä ktivator copper and chlorine in the coactivator at 800 - 100O ⁰ C heated layer performed In this HeLSimplantatioc the radiation damage heal irrespective of with Pur the conversion of the copper and Ghiorionen In luminescent centers is a Port reduction DER heat 30 me be hand lung in '650 -.. 700 C - erf orderlich · In the copper and chlorine doping process according to DS-QS

before being exposed in a supersolchloroar atmosphere to a photochemically stimulated copper and chlorine precipitate reaction. The steam pressure of the copper chioryl is during the ge. velvet diffraction time and uniform distribution of dopants in the layer.

L · QO H / ^ * J

In the case of the vapor deposition method known as "atomic layer epitaxy" (ALE) (DD-AP T22 479 '), a layer of zinc and a sulfur are applied alternately to a glass substrate. applied. In this method, the temperature

The temperature of the substrate is increased to such an extent that at the first zinc or zinc chloride vapor inlet only a monoatomic layer of zinc can enter into contact with the oxygen of the substrate.The remainder of the zinc evaporates back into the gas space at the temperature The sulfur dioxide or hydrogen sulphide vapors reach the zincate layer to saturate them with sulfur atoms, and in the sulfur vaporization the reboiling ensures that the excess sulfur is pumped out. "With δβτ introduction of manganese from a J. steam source

Ϊ5 sets the slektroluminescent color and intensity. (Electronics, May 22, 1980, p. 42).

... with ..andan. Known processes for the preparation of Iranins capable A-3 layers in a metal-insulator-semiconductor-insulator-metal structure according to ^{one of the} DE-A'S "2 * 4'52-5O3 becomes the luminescent-active layer A continuous vaporization temperature of TTOO- 12QO ⁰ G 'ensures a uniform transfer of all layer constituents, also in the direction of the thickness of the layer ¹ Dickener.The substrate covered with a transparent electrode is formed by a thin-layered, manganese-doped ZnS material T5O temperature of - 275 ° C preferably 250 ⁰ C -and then steamed for the Bauer 1 - 2 hours at 575 - 6oC ⁰ C in vacuum annealed the previous Technolosie for producing Elektrolunines-- zensanzeigen, in particular for A "Έ. - Layers in xy-matrix displays have a number of significant deficiencies.

Scattering in the threshold voltage from pixel to pixel, as occurred in the displays produced by the known methods, mean that when applying a uniform, formed from the holding and signal voltage value to the matrix, the Lientstärke-voltage characteristic is sefahren in different Lichtstärkecegel.

On the other hand, driving with voltage signals of different amplitudes does not therefore lead to the same light intensity at each pixel. Therefore, a simple star nucleation, as would be useful for increasing the degree of information of the display, is via the modulation of; external voltage Samplitude not readily possible. The scattering of the threshold voltage and the light intensity in the display matrices are certainly not limited to the permissible level in the hitherto known state of the technology.

 Changes in the optical linearity of the luminous intensity-voltage characteristic associated with the decrease of the contrast ratio indicate the instability of the dielectrics in the pixels. Technique becomes clear when the operating point of the pixel in a range of light intensity

ke-Spanirahgcharakteristik is placed, in which the light intensity 'ke has a near-voltage sunabhängig sigt sigt ❑ s ert.

The required additional voltage signal is in. The magnitude of TGO Y. If this signal is already undesirably high, then this adds up at least equal ground and Haitespannung.

Obtaining uniformly high saturation values of brightness across all pixels of a display also causes some; Trouble. The requirements placed here ·

25 are comparatively many times higher than in the case of <1 × 1 injection luminescent diodes of monocrystalline semiconductor bodies in production. width of a luminous intensity class would be inadmissibly large here. In addition, are derived from the operation in Sätΐigungsoe ~

JO reaching the Xichstärke-voltage characteristic even from additional demands on the long-term stability of the product. At the same time, the chemical stability and the resistance to moistening constituents of the ambient atmosphere are not satisfactory even during operation under lower control conditions. From the superposition of the high electrical load in saturation mode, but at least in the breakdown

operation and chemical sensitivity. localized instability phenomena in the ^"0 HZeI- you geelementen- ätrSern in both shifts. Schwellspannungj change of ^{Δ η} ~ and decay behavior of the electroluminescence, the increase in the number of tiny scars _r the appearance of dark spots and outgrowth into small area-. chen and Loss of light intensity during long - term operation, as well as in short - circuit phenomena.

A further disadvantage of the known methods (DS-CS 24J2503) TO is that the hysteresis effect and the amount of the hysteresis voltage can be precisely assigned to neither a substrate temperature, a manganese concentration nor a thickness or grain size of the luminescent layer.

The scatters and difficulties of reproducibility T5 - certain voltage values. siirT- so large that an exploitation / the H ^ -stereseeffektes to facilitate the control of the pixels and the simplification of the drive circuit can not be used 'can' It is known (DE-OS 30 TOT 64 ₁ DE-OS 29Q3S66, DS -OS 2803626, DS-OS 2 & 5Z652) that the thin-film structures are very sensitive to the ingress of moisture from the submerged stoiosphere and therefore a high incidence is required to avoid this danger.

Object of the invention

The aim of the invention .A method of fabricating thin film structures, in particular for guiding reflected, and thermic bonding of components of a 'sandwiched between thin dielectrics Vsrbincungshalblei- · ¹ · terschicht, and the doping and activation of luminescence centers in this layer for the economic Herstelle To provide large-scale Slsktrolumineszenzanzeigeanordnungan with improved technical parameters. When applying the method according to the invention, sine legs develop useful effects, which are manifested in

- the guarantee of layer adhesion without acceleration,

the; Components of the multi-layer system-against the substrate during the coating application

the maintenance of the constancy of composition of the inert gas components in the rearrangement of the vapor layers and the activation of the luminescent centers

 · * The much more complete binding of the bonds of the components of the multi-system

  - The structure lumineszenzfähiger thin-en-with better reproducible light intensity-voltage characteristics and 'TO increased uniformity of the light intensity on the Änzeigeflä-. , .marriage

- the damage- and reaction-free formation of the multilayer system on flat substrates made of cheap, thin organic or; inorganic transparent solids

T5 - the exclusion of unwanted, high and unhealthy. distributed widely. Interlayer and interfacial layer strstandsdichten between the dielectric and DER liimineszenzfähi- gen A ¹¹ B ^ ¹¹ - .Schicht

- the degradation of mechanical stresses and chemical instabilities in the multilayer structure

- in reproducing the light effect, it sharpens the light intensity voltage

, - as well as in improving the uniformity of active

Layer and avoidance or reduction of an amorphous 2-ü? Tots chi clit near the interface with the substrate

 '' .. -attSern. '. '

Presentation of the nature of the invention

Slektrolunizenzzenzanordnungen as Vielschicntsysteme with electrical and optical features, require the production

- broadband amorphous, transparent low-refractive

Dielectrics with increased insulation resistance, extremely high breakdown field strengths, higher dielectric constants than in the EL layer "

- wide-brimmed, amorphous, transparent electrodes with high electrical Schichtleitfähigkeit and the production.

- broadband, in the visible spectral range of efficiently emitting large area thin films.

The luminescent centers present in the layer in high concentrations down to the mol % range and present in the layer

VO concentrations should not be brought to completely EL-active positions without long-term high-temperature treatment since solubility and diffusion limit the uniform distribution in the layer due to their temperature dependence. During the deposition of the layers on heated substrates

 15 th and the annealing of the layers to form the luminescence is the layer substrate sequence, evenly heated and largely stress-free. The significant mismatch of the temperature coefficients of the linear expansion, the thermal conductivity and the thermal capacity of the multilayer structure, however, leads to leaving behind surface tensions and layer distortions in the cooled layer system

Moreover, in addition to the camouflage treatment, uncontrolled exchange phenomena occur between dopants and vacant luminescent layers and non-luminescent ones. Materials of the environment.

Furthermore, the heat sources used for tempering the layers vaporize the thermal attack and decay in the layer,

¹ ^ o-Ti ~ Z ~ rf ΐ T, c '· IT · with d ^a or · c · V) r, ~: a iiTr'-ab-Zt ί c · "*" ¹ VLP ¹ ^ P ^ ¹ tso -fV <private

These problems can be solved and the growth of extremely thin layers with large nuclei on especially amorphous substrates can be achieved.

According to the invention, the object is achieved by a method in which the material for the thin layers, in particular the zlacoluminescent layers and the insulating layers, passes through

Heating the sources, e.g. provided by evaporation. The individual elements and / or the non-dissociated constituents of the vaporized material are cooled to very moderately heated, partially coated, for electrical

5 "triluminescent" transparent substrate as a film for sorption. For the duration of a transformation of this sorption film into a continuous thin layer of mixtures of crystalline domains of basic binary or ternary compounds of elements of ΙΓ. Main group and the ^u halkogeni-

TO the dopants forming with incorporated luminescence centers, but also for the duration of one. From saturation-free bonds in the SL thin film, the insulator layer, and / or the interface between the two, elementary excitation or temperature elevation in the sorbent films is induced

T5 temperature during sorption and over the temperature of the adjacent areas of the substrate made. For this purpose, the energy j power, the energy density, the duty cycle and the pulse width can be set to specifiable values MLt-. tel for stimulation or heating.

The dopants are instantaneously undelayed during one

Decay of stimulation or cooling, in which the Fort. the classification is maintained, frozen.

"The partial coating may have the form of interconnects.

, In one embodiment of the invention, sorption films - of zinc and sulfur - or zinc and selenium on substrates made of glassware, flat glass in the form of thin glass, with interconnects of lTj.20ySnG2 with a molar percentage of more than 2p % SnCp., Preferably ^ av, 40% molar percent are deposited.

Covering the conductive path before and after formation of the scribe film with an insulating layer of zirconia, aluminum nitride, aluminum oxynitride, aluminum oxide or the like

.ιϊα υ egg. icsi - b u ν OX \, c j-i.i_cL ^ ^ *

Another embodiment of the invention provides, ü & Q Sorptlc-nsfilme of zinc and tellurium a ¹ ^ substrates Fourcault; las or similar alkali glasses with interconnects

α ι ο-

from 111202-SnOp having a mole percentage of more than 5 mole % SnO 2), preferably 15 "mole percent, are deposited

 Particular, further development of this embodiment of the invention

The formation of the sorbent film of zinc and tellurium in an insulating layer of magnesium fluoride, magnesia or similar material constitutes the covering of the conductive pathway. According to the invention, the sources derived from various sources are

1Ό the or dissociating during evaporation components of. irrespective of whether it is composed of zinc or the ghalkogenides or of insulator material elements, taking advantage of the increased adhesive coc-tities of the zinc and chalcogens, as well as the insulator material elements

T5 "the defined tempered substrate while the" defined temperature in Sorpticnsfilm a binding reaction ",.

Sine π ereitfeildung the invention consists in a short-term increase in temperature and / or the production of an excitation state in the Sorpticnsfils from which are discharged during the temperature increase or the increased excitation, the remaining excess components and unbound elements on the substrate-facing surface side. The bonds of the balanced elements are completely saturated to form a continuous thin film or insulating layer

 Each another ^ development of the invention is during

U.N

of the Histerisl from the source urd during the "^ '

Formation of the sorption film on the substrate in the meantime 30. lent several times a short-term increase in the temperature or the excitation graces made in Scrungsfilm.

may be carried out over a large area. For other applications, it is better to carry out the heating J5 or excitation of the sorption film in small areas which scan the surface of the sorptive film.

According to the invention, the heating or excitation of the sorption film takes place by irradiation from a radiation source, in particular a laser. The photon energy of the radiation may be larger, or near the bandgap of the zti-forming layer

ε; - be selected. The radiation can be impressed both in continuous wave and in pulsed mode. A particularly advantageous embodiment of the invention is in the determination of the photon energy of the radiation

IQ a value that is smaller than the band gap of the layer to be formed. ·.

Another embodiment is the use of laser pulses with pulse widths below T us. Sine exposure with flashlight bulbs is having a big one

j-cj spectral width of the excitation associated. However, in order to circumvent the expense of beam guidance from laser sources, "as a substitute, also flash light sources can be used for excitation.

embodiment

, ' The invention. Sol3L below on an embodiment. ' 2Ό be explained in more detail:

The associated drawing shows in

.Fig. T: the production scheme of an electroluminescent

arrangement

Fig. 2: A vacuum system for thermal. Bonding of elements in sorption films with an xv laser

beam grid '

Fig. 3: a vacuum system for the introduction and precipitation -von. Scrubbing films on substrates and subsequent layers of liquid in a cured layer.

3e electrol.un1ir1es2enza11.oranu11.geri 3 the at 7 /: eldanregung ~~ Cr i ^ i-3 Lt.-Z ~~ ° Ι · ''";el" i S ¹ G-Lr 6 "'^ 6 Π 'ZinlCC] ri3l- £ C53-r I-Cl SC! T i ^r 0-P "fc QP ZU ¹ G'i ·" ¹ »Λ ^ ir» V-1-ΐ B' ^ 'f · 1 '"ΌΓ" i ", ^' ^ ¹ '^ * i ~ dffi 1 QO" 1 ΛΓ "t T" C! 1 Γ * Ή Ί "V) P ^ ¹ O Γ! ^ \ ~ Γ · PV "h * ° P" * 'hp ^ Pl. ^ R *! Γ! ST »jj ^ i j ~ ji i_, ^. hi. ^ li · ' 1 vii w ijul iww - -' - -tii-i i_. · - ¹ ^ / J. J- ¹ J s / Ctj. -_ -_ vj ^ ¹ ^ ··. ^ v - Ο .- »- ^> \ ^ __ ^ 1 ^ 11

are required, the incorporation of luminescent 35 "centers forming elements, in particular on zinc substituent

tion grid space. Before, however, the active electroluminescent. zenzfähige. Layer of a substrate 1 "(Fig. 1) can be formed from device glass 6" 3 "O. The device glass ¹ β 30 is in the form of flat, about 1 mm thick ground and polished plates The polished surface of the substrate 1 is coated with a conductor 2 made of InpO 2 -SnXU with a SnO 2 content of 40 % to 100 %, and the conductivity in the interconnect 2 is set to a value of

fO 2Ό Ohm D set. In a photolithographic process, a large area InpO ^ -SnOp layer is decomposed into parallel stripes. The width of the stripes is JJQ / μm and the center-to-center spacing of two adjacent stripes is 440 / μm . In this "nine strips each become one"

T5 ner group summarized. The next group of stripes follows with an 'abs' of ΐ, 32' mm.

After thorough cleaning, the conductive substrate ΐ is prepared in a vacuum system for aluminum oxynitride dusting. In the pollination 20 'extension process is bombarded -a Al target with "one nitrogen and a weak oxygen-containing argon stream. The ^ PROPORTION the nitrogen ion beam at the entire Zerstäubungsstroin is more than 90%, preferably adjusted to 9J%. A film formed by sputtering Sorptionsfim 3 of Al, N, and oxygen is not yet fully stabilized. This is also not achievable at the relatively low Aufstäubungsternperaturen of 200 ⁰ C. the adsorption film J we-d in a vacuum plant by? ix. 2 through localized heating of a Radiation source 4 in a Isolatcr-

3 "O layer converted" Since after dusting the bonds of

¹ ^ s ^ i Ji

Substrate ΐ imaged with the sorption film 3 . The radiation passes from a fixed mirror TC on two raster mirror. With the vertical scanning mirror TT fixed, a first line on the substrate t is scanned by the focused beam T 3 'by slight rotation of the horizontal scanning mirror 12. Since some of the heat generated thereby flows off into the adjacent, unaffected regions of the sorption film 5 However, if the heat dissipating heat is insufficient for the binding reaction, each part of the sorption film 3 must

Ϊ0 be touched by the nucleus of the focused beam Hj . Since only in the highly heated areas develop the final transparency property s of the insulator layer 5, the radiation absorption at this second touch of a part of .jetzigen insulating layer 5 is not critical. During a

For a large part of the film 5 and the substrate ΐ is not thermally heated, the substrate T is still heated from the side of the substrate holder T4 with a cooling liquid 15 from a container via a cavity ΐβ is cooled in the substrate holder T4, the substrate remains cold during the process of 'forming' the insulator layer 5. At the end of a horizontal scanning of the substrate T, the vertical scanning mirror 1Γ rotates at an angle corresponding to the center of the focused beam 13 Then, the horizontal mirror Ϊ2 rotates back to its original position.

2.5 days back. At the end of the return of the horizontal scanning, the Tertikairasterspiegel Π is further rotated by an angle corresponding to the beam diameter. The f ^o: kuss'ierte .Strahl 1 3 passes in this way- the whole me.anderfönnig: surface of Sorpticnsfilmes 3.- Before the substrate

30 ' T is taken with the insulator layer 5 the-recipient -8, the temperature of the substrate 1 is heated with the layer 5 above the dew point temperature of the ambient atmosphere. The dielectric constant of the insulating layer 5 "of aluminum oxynitride is 8.5 ×

In the following operation (FIG. 3), from a resistance source in a reference source 17, one becomes a

* - ^ O <4 ί 3

Eochvakuumanlage commercial luminescent pure · zinc. stilfid and evaporated from a second evaporator source T9 4N pure i £ hS. The manganese concentration in the sub stratified sorption film 20 is set to values of at most T mol% MhS in the ZnS. During the third evaporation from the evaporation sources T7, T9, the substrate ί becomes coated with the layers Substrat ^ Ο ,, - εηΟρ 2 and Aluminiumoxynitrid ' 3 maintained at temperatures at or just below room temperature., The substrate holder 2T for the substrates T points

TO inside again a cavity 21 on. In these . Cavity pumping a thermostat 23 "a tempered liquid .. The occurred during the evaporation of zinc sulfide and manganese sulfide 'decomposition in zinc, manganese and sulfur is in the sorption film 20 partially".

Undone T5. Owing to the high adhesion coefficients of the elements zinc, sulfur and, to a lesser extent, also the total evaporation rate is markedly reduced and the stoichiometric equilibrium in the sorption film 20 is largely maintained at the set temperature of the substrate T. S Sin Part of the free bonds the vapor-deposited · elements is already saturated at the stage of suppression of the Sorptionsfilms 20th in some areas äes Sorptionsfilms a certain degree of order of the elements so daJB creates the optical properties of absorption

- | - r- · tr

to develop significantly "Unlike A ^× B bonding or element semiconductors, the spectral dependence of the absorption is much closer to the thin film to be formed 24.9. Certain differences in the proportions of zinc and sulfur now turn into a temper -3. j

3Ό in which the substrate ΐ from the 'position over the evaporator sources 17? 19 is rotated by means of a bearing for rotation 25 in a position over a quartz glass window 26, balanced. The radiation 27 of a nitrogen laser is sent through an arrangement for homogenizing the irradiation, in the simplest case, by means of a holographic disk 28, through a diaphragm 29 and via a mirror 30 through the window 25 3 ¹ Jf the substrate 1. The holographic

Disk 28 contributes to the fact that the same radiation is offered on each surface, and the required irradiation H ₀ in £ / cm * is measured over the sum of the partial surfaces

e 2 '" ""* - ·' ·

, .I) ie., Irradiation must be set to values above 1 J / ca ·

The reason for the considerable low thermal conductivity of the substrate 1 is the radiation absorbed in the sorption film 20. ment predominantly implemented there and not derived in the substrate T. The elevated temperature in the sorption film 20 results. a re-damping of excess. elements

tO over the sorption film surface and to a hardening of the bonds of the zinc and the manganese on zinc place with the sulfur "Since the heat capacity of the layer combinations differ only by some 10 % and the ZnS with the telativ-- lowest heat capacity occurs occurs

T. 5 after switching off the / Irradiation a fast .unv er hesitated cooling of the? ' formed thin layer 24 a. For the formation of the thickness of the thin film 24, the sub-layer

· ·· strathalter 21 again and repeatedly in the position on the • '' Terdampferquellen 17, 19 driven »The thus formed new part of the sorption film 20 v / ird in der'Position

is converted over the window 26 by renewed irradiation into a ZnS thin film.

A new sorption film 31 'of aluminum nitride passes through the thin film 24. Electron beam v.er attenuation of AlN tablets formed in a high vacuum. The sorption film 31 is again exposed to the radiation of a continuous-wave argon laser. The scanning mirror system 9 locks the new sorption film 31 and converts it into an insulating layer 32 of AlN. The boundary layers between the thin film 24 and the insulator layers ρ and 32 are poor by matching 3e.r irradiation to the requirements

-ο

"Π ^ jar» fricion η "in'n + 0K _-1

Interface states. The number of free, unsatisfied bonds is drastically reduced.

With the application and photolithographic structure of a further layer of In ^ 0 _? -SnO ₂ (40 mol % SnOp), the interconnect 3T is completed Now T are interconnects 330 / μm wide and 440 pitch apart / am to a group

summarized · The next group of stripes follows in one. Distance of 5 "08 nmr. "

The surface of the interconnects 33 and the gaps 54 (FIG. 1) lying between the interconnects are covered with an antireflection layer 55.

It has been shown that the dielectrically isolated zinc sulfide-type thin-film electroluminescent films prepared according to the invention have improved thermal stability in the working temperature range. In addition: has both the ^

TO the thermal expansion coefficient of ZnS (6.3 "6)

AlN (6.63), Ih ₂ O SnO ₂ (6.5) (all at 10 ~ ⁶ per ⁰ K) as well as contributing to ensure low Re si diruckspannungen in the layers

 Another special feature is the sensitivity to

T5 'Humidity and other environmental influences. The complete saturation of bonds in δβη layers and ensuring the balanced lattice balance contributed to this.

Claims (9)

' Invention sanction T. Method of producing thin-film structures, TT YT ' , in particular from A "B compound semiconductors for EXE trolumineszenzanzeigen ,. wherein the material for the electroluminescent films and the insulator layers is vaporized or atomized by heating or ion bombardment of the sources, characterized by the individual elements and / or undissociated parts of the material transferred into the vapor space on a cooled to very moderately heated, partially coated, transparent substrate (1) are brought as a film for sorption, in the sorption film (3 ", 2'0.3" I). sine elementary excitation or temperature increase over the temperature during the sorption and over the temperature T5 of the neighboring areas of the substrate (!) for the. Duration of conversion of the sorption film into a coherent thin film (Z4) of mixtures : '. ner- areas of binary or ternary ground connections of the elements of the II. Group and the chalcogenides ^ with incorporated luminescent centers forming dopants, is carried out and for the duration ^; saturation for bonds in the EL-Düimschicht (24) eggs insulator layer (5) and / or in the interface area between the two in the SorptiansfilhTen with respect to energy, power, energy density, duty cycle and pulse width to specifiable values adjustable means (6) a. Stimulation or heating, and the luminescent centers forming luminescent centers in the crystalline regions of the base compound on the substitutional lattice site are frozen during a rapid, non-agitated, thermal quenching process that maintains their integrity. 2. Method according to point t, characterized in that the substrates are partially coated in the form of interconnects ο 3. Method according to point T, characterized in that the substrate (1) for the sorption of films (20) of ZnS and ZnSe with interconnects (2) of In ₂ O-SnO ₂ with a molar percentage of more than 25 % SnOp, preferably of 40 KqI % and the substrate (1) consists of glass β30, 650 or 680, zinc-atrium-borosilicate glass or a similar glass. 4 .. The method of item 1 and 3 5 characterized in that the interconnects (2) of the substrate (1) prior to sorption TO of films (20) of ZnS, ZhSe with an insulating layer 5 "method according to item 1, characterized in that the Substrate (1) for the sorption of films (20) from ZnTe · T5 with interconnects (2) of In ^ CL-SnO ^ with a molar percentage of more than 5 mol % SnO ", preferably T5 mol % , and the substrate "consists of fourcault glass, instrument glass, optical glass or comparable alkali glass. β. Method according to items 1 and 5, characterized in that the interconnects (2) of the substrate (1) are covered with an insulating layer (5) of magnesium fluoride, magnesium oxide, etc. before the sorption of films (2C) of ZnTe. (5) of ZrO.sup.-, aluminum oxynitride, aluminum nitride, AIpO- or similar material. 7. Method according to items 1 to 6, characterized by the fact that the constituents of the zinc and chalcogen sorptive film to be formed from different sources or dissociable in the evaporation process and insulator material are defined by utilizing the increased zinc and chalcogen etchant coefficients and insulator material elements tempered substrate during the persistence of the defined temperature in the sorption of a binding reaction can be supplied. <· Ο ο n ι off 8. The method according to item t to 7, characterized in that 'during a brief increase in the temperature and / or Herstellungs'eines excited state in the sorption film, the remaining ingredients and unbound 5 "elements on the substrate side facing away from the sorption film' from the forming thin film dissipated and the bonds of the elements in equilibrium to form the coherent. thin layer are completely saturated. TO 9, method according to point T to 8, characterized in that: Whatever the evaporation; the material from the source and during the formation of the sorption film on the substrate in the meantime a short-term increase in the temperature or the degree of excitation in the sorption film is generated. TO. Method according to items 1 to 9, characterized by 'heating' or 'increased excitation' of the sorption film: large surface area » , TT .. Terfahren after point 1 to 9, characterized in that the heating or excitation of the sorption film in small. Particles that scan the surface of the sorption film is performed. .T2. Method according to point T to ti, characterized by cTa.3 the heating or excitation of the sorption film 25 ", by irradiation from a radiation source, in particular a laser. Verfahren% method according to point T to 12, characterized in that the intensity of the radiation is chosen to be greater than the band gap of the layer to be formed. JO. T4 'retracts, after point T to 12, characterized in that DAJ? the photon energy of the radiation is chosen to be smaller than the bandgap of the layer to be formed and emitted on Q-switched lasers at pulse widths below T / tis. For this 3 pages drawings