DE1903034A1 - Solid multi-zone arrangement - Google Patents

Description

Solid-state multi-zone arrangement JUOUO

It is known that the breakdown field strengths for semiconductors are like germanium or silicon, above 10 V / cm. Although today semiconductor single crystals with diffusion lengths of Charge carriers larger than 1 mm can be produced, it is not possible to produce pn junctions e.g. in silicon, which block more than a few kV. One reason for this is that before reaching the so-called Zenerfeid strength a breakthrough due to avalanche effects with carrier multiplication entry. A real Zener breakdown in silicon is only possible in the voltage range 0-6 V. £ lj

Sin wx] another reason, which is even decisive at very high voltages is due to the excessive power consumption of the space charge zone. For a reverse voltage of e.g. 5000 V. As is known, the width χ of the space charge zone can be calculated according to the relationship:

Here & = * & _H · £ - _a , with £ _M = DK of the semiconductor, £, = Ver'schiabungskpnstante, · q Elemeixtarlauung and N impurity concentration in the silicon. For very high resistance silicon - about N =

ii, 3
10 / cm - becomes the width of the space charge zone for U = 5000 V;

-2. ^SP

3i ο

so roughly equal to 1 mm. If the specific resistance of the silicon in the space charge zone is set equal to the specific intrinsic resistance and <a = 10 Jicm, then the total resistance is

2, R of the space charge zone stood for an area F = 1 cm:

. Ü ¹ = "' ⁴ · loiit ^ bvr ^ -« · "v ^ .l-.nche Breakdown in Silicon" in Fest

a body problem! Ill, 1964, pp. 209-231 of

Prof · Dr. F * Sauter la Verlas Friedrich Vieweg j doh, j,. <«Nhveig, 64

The reverse current J through this 1 cm area is: "

The electrical power Q converted in the 1 mm thick barrier layer is thus calculated as:

Q =

With practically every cooling, this power consumption of the barrier layer would lead to an impermissible heating of the

J3 3 judges lead. For doping higher than 10 / cm results the bill even greater thermal loads. Since doping less than 10 / cm is hardly used with silicon can, this rough calculation shows that very high reverse voltages with a pn junction in silicon are already sufficient Temporary reasons are not feasible.

The invention describes an arrangement with the help of which it is possible to use rectifiers, diodes and switches to build in which avalanche breakdowns and impermissible thermal loads are avoided even for the highest operating voltages will. According to the invention, the high reverse voltage is used for this purpose U and the space charge zone connected to it on a plurality of space charge zones of smaller thickness - in one single solid-state arrangement - distributed. The voltage at each individual ^ of these space charge zones is, for example, no greater as 6 V. Such an arrangement is shown in la and la. It consists of a series of monocrystalline Silicon layers. If one applies to such a multi-zone arrangement with e.g. 1000 η-layers, as in la, a reverse voltage U = 5000 V is applied again, then every single

sp

individual n-Schxcht only a voltage U. = 5 V. One occurrence Avalanche breakthroughs are therefore not to be feared in this arrangement despite the high overall voltage. Do you do that Doping of the individual η layers again 10 / cm and their Width x. according to Eq. (l) just as wide as a space charge zone no for. 5 V reverse voltage, then x. = 30, u wide. The blocking

2 ^Χ resistance - again based on 1 cm - each of these space charge tones is ζ

009832 / 1B15

The fiJ-ek-t-igo-Hrea reverse current is: 190 3 034

C ^-

The power consumption Q. of a single layer is:

- 3γ · ^ - - S ₁ H- ■ / j

j ² -

The power Q of the entire rectifier for 5000 V blocking

3
voltage is 10 times higher:

* -IO *

= S-Qi = 8 t

'2

A power consumption of 84 W (with 1 cm cooling surface) with appropriate cooling, not to lead to inadmissible heating of the rectifier. The silicon arrangement According to the invention, it would also work reliably in the blocking range up to 5000 V.

If the polarity is reversed, this arrangement has a good transmission, since the ρ η transitions then "tunnel diodes polarized in the reverse direction" are.

The blocking and flow properties of the multi-zone arrangement according to the invention are also better than with a single pn rectifier of the same voltage because the Shockley condition for the "pn junction with low recombination" is better fulfilled. The condition <. ^ X (with <L = diffusion length of the charge carriers) is easier to implement in the multi-zone arrangement according to the invention. This arrangement is also of interest because the series connection of e.g. 1000 barrier layer

capacities results in a zero capacitance of the rectifier that is 10 times smaller than with a single pn junction. Since with sin.eiii abrupt pn-transition the capacitance ^{decreases with U i} , in the multi-cell arrangement according to the invention however with - (** = number of layer sequences) with the same voltage U = Σ. Ü:

^S P i.

decreases, so is the thermal capacity of the multi-zone arrangement

at the kiasimalsn voltage U still by the factor v ^ "2

^S P

! your than the capacity of the single pn junction. A rectifier or a diode according to the invention therefore also works up to higher frequencies than a single pn junction.

Multi-zone Anoränimgen according to the invention, which also as The Bi3Mior Ib to If also show that rectifiers work with only one blocking direction. -

0 09832/1615

Completely analogous multi-zone arrangements, but in both Block directions and display V / echselstrom components, Figures 2a to 2n show.

According to the invention, the doping of the n- and p-layers in B la to If and 2a to 2n is so great that the concentration of the mobile charge carriers is at most 10 / cm. These layers form (single or double) the _rt zones i "dei multi-zone arrangement according to the invention. The doping of the n ^T - and ρ 'layers is according to the invention so high that the concentration of the mobile charge carriers is at least 10 / cm. These layers form (single or double) the _A zones II "of the multi-zone arrangement according to the invention.

Single crystal arrangements (as in the - shown la, Ib, Ic and 2a), can be prepared by means of epitaxial growth from dor gas phase, the melt or by vapor deposition in a high vacuum with an appropriate thermal treatment. However, according to the invention, the zones I and II can also be produced laterally by (as in Ib and Ie ¹ ) perpendicular to this monocrystalline semiconductor layer with the aid of planar in-diffusion or out-diffusion, or with the aid of ion implantation, the zones I and / or II according to the Invention created.

The production of the multi-zone arrangement is particularly simple according to the invention, if one is metallic or zone II highly doped semiconductors in the form of Schottky contacts Semiconductors or insulators Yes, Zone I! Is used.

The Schottky contact on a semiconductor does not have such small reverse currents as the pn junction, but this disadvantage is partly offset by the multi-zone arrangement according to the invention, the reverse current J both in a pn junction and in a Schottky -Contact is described by the expression:

- ■■ Λ - ΙΑ H) 3 «- 3s ■ I ι - e

J is the saturation point, q is again the element ar charge,

Iz die Äolzmann-KoaSväJite, T die abrolut «temperature and U wi-odes · die am pr ^ iilmrjjf ^ g od« -i ° dem £ <: ^f -i © ttlcY »Korvt.« Kvt reverse voltage. Ö Ö11 f 3 f 1 S f $ ORIGINAL INSPECTED

The decisive difference between a * pn junction and a Schottky contact is therefore the size of J, which is much smaller in the case of a pn junction.

Values for J at the pn transition! Saum arreiclit and for goes into the expression J at Sc

the land concentration N of the peripheral marginal layer.

(v ^ is the mean thermal speed of the charge carriers) "If one sets fSj _P * fSJ__, (Eandkosssiitration = Intrinsic-

Konaer.tr at ion) then one can choose the ^ Schottky Ksataktes thermal alistwork in the

Semiconductors, and above all by choosing a semiconductor with a sufficiently high band gap (iileiiiem f ¹ !.} · Also J and

X S

thus the reverse current of a Mehrsoneaa arrangement according to the invention with Schottky contacts en klein geiräg saclien. The zones into which the space load zones can spread at the Schottky contacts are used. ex · inventively vain is tall ine, coarsely crystalline, p-oXylcris tall ine or "amorphous" b ^ .w * Inorganic "glassy" or or ^ asiissäe Halblei'tsrschicli = "th OAER inorganic or organic insulator layers These zones I · and the zones JJ can known by means of methods such as Hochvakuuai "evaporation, sputtering, reactive sputtering, Hocihfrequeiaz-Kathodenzerstau ·" W advertising, pyrolytic - Dry - or electrochemical -. deposition or by ion beam en erzr-esigt ASLN you can by superimposing or Übe2 ^t e ^i, tai of thin films (eg, in a high vacuum Bedas ^ .- 'its-y F may subsequently presses odeir Walser l ^ & s Igest ail!':!. c - ^ also r Flammspritaen can be used to Zones I and IS can be used to produce zones I and IS, but a combination of these methods can be used, such as the evaporation of an metallic sefeiciit with subsequent, odic oxidation or partial oxidation.

Fc

? λτΛ : ^τ , € 0/8 :, 1 ^ 16 SBvä.v..5 -; "- Te £« lsü

1 p

ORiQtNAl INSPECTED

Since the Schottky contacts according to the invention the function the ρ n-. ρ ρ- soivie of the ii'p and n'n transitions in the - adopt la to 1Γ and 2a to 2xi has your choice special meaning.

Since, on the one hand, a metallically conductive surface (metal or highly doped semiconductor surface) has a vacuum work function (U, which depends very much on the purity and nature of the surface, and, on the other hand, a semiconductor or insulator surface, even without a Schottky contact, already has surface states we want under \ i /

mi Crt ^Tr1 ' ^H

or \ U understand the "effective thermal work functions ¹¹ for electrons or defective electrons from a metallic interface in contact with a semiconductor or insulator with the band gap Ub. For every Schottky contact, the sum of these effective thermal work functions is the same the bandwidth of the semiconductor or insulator is: [3 j

Tß Tn.U

From this it follows for the more efficient ... thermal electron exit axes:

ε Ψ ^(Μ) -φ *

'ft, H Iff

1*

Here (D is a "quasi-Yakuram exit work" of the metallic surface, which is defined by Equation 5, and in particular not with the measured vacuum exit type.

beit (D is identical to the metallic surface. φ is Tm Th

the photoelectrically measured Fakuuas work function of the semiconductor or isolator.

£ 3] E. Spenke "Electronic Semiconductors" S lQSö Snri.Tnrer — Yez'J.iior

Springer-V

009832/1615

The following then applies to the effective thermal defect electron exit work: ■

> 'n.w

or

L ^

₌ (j) +. AE ._ φ

Positive Φ ^ or U ^ ''"mean (analogous to p ^T u- or η **" ρ-transition-sa) Convergence boundary layers ara Schottky contact, i.e. rough charge zones, the thickness 2S_. for the de-energized case according to equation (1) calculated: <rsrdea can, if one uses the work functions for U according to equations (5) and (6 J).
Negative \] β ^ι> " ^Ί or (P ^ mean (analogous to p'p- © of the η 'n transitions) Aara ^. Iier-angsi-andsohichtsn at the Schottky contact" also "OhEia ³ sshs ilcirtakte".

It follows a-3 B £ ^g:;.! La £ i £ H2 a £ ^ l5J5 ^ ^s ^ JLJ ^ fa '^ ^e11 · ^{riur aa} metallic

t 3n sir ^ d, at dssea following

• ^ j if A " ^ΛΛ5 <; -_ '''' Si == ¹ SS ^

: i'3'i; 2, l2.? sItG GIssirfXSGlis

For the intrinsic HalDiexter there is uxeichung (üaj the condition for the training sirisr iSl ^ ktronsnanr security layer and equation (ob; the Bea ± ..; gvsig £ ^; άχ · the formation of an enrichment layer 'von Böfslrc «

For Siiaiura 2,3 = with sinas 3s.zic.zih & ~ t «tjcI Xi an optically g-arasgssiier E-le: -r.trori3" = Aj.stritt.5 ': rbsit of 5.16 eV it follows that the "Quesi-Vak'iizai-A-astrxtts-arbeiten" φ by Sehottky Koiitekten on n-dct-Lertes; Siliisiuir. larger or smaller sis ^., 5-S eY be sri.3 £ e; a ₃ <ia : ni "5 Yararrnungs- or enrichment edge layers aa p-Sili aa p-Sili:

muf4 © smaller or larger than · 5 ■> 66 '-aV seisi. Jrt

Although - '.vis already said - the ^!: Q, uasi-vakuuak-exit work; en' ^! d- / very complex sizes are ₃ heights = but in exrvara qualitatively unambiguous 2u * atniRsr.iians with the measured vacuu.na exit direction Qj of metallic surfaces It is therefore practically entirely possible, by using layers nsit sufficiently trroiiei: -idary ainröiekend klei-ιτ> ΘΏ yakinauj-Ana ^ rzttsarbsiten IU the bSiZÖ ^ i ^ ts ^ i "/ poor or enrichment marginal layers in the Mehrzon'in arrangement also with the help of Scho"ttky-Xon'-iakt3n according to the Invention to generate.

In the case of metals, we have Valcuuna outlet carbisites of approx. 1 eV (in the case of the alkali metals) up to approx. Β eV (in the case of the precious metals) ©, carbides, sulfides, halides and intermetallic compounds, slide an even bigger difference ± n have the vacuum Ättstrittsarbeiten Caesiura-Woifram-0 ° -.. £ jd "or cesium-silver" oxide ^ films have Jg ₅ B = ¥ akiiUEn Outlet seE 'work between 0.7 to 0.8 e ^{T. R} , while with ivoliVais-Osydl-Schiahten ^ Ms Valcaum- Ausittsar- b® ± t @ n' to au S ^ W or! .G © messsi ;. vrurden and «ini £, o insulators above- lied-

Uiig ύοώ, gofc = 5ttk; r «-EoHtaI"t'3: a Isaiin ^ nan if »ahaib eriE'S £ - aiicii s ^ issköa the Hctlbi ^ A * ar ™ 'b'c - ^ -' t Xsolatorid äie Eiie- Sallisssk'-S Saki ^ '::!. & V ^ li darar "::;.: X» chemical

2/1316

iiXsiC'iSf civsn tixiü Dsfelst-sl sl-cti-s-nen

i Pre ^ dschicht ξγ_ Ei let this sr '-laHr ^ E ^

uz : -, ζ, ΐ '; r ι ϊ ϊ; s ar. ·; · · .; it sr: from is. iisn HaIbX-sitsar cells' Iso-! read S-sreoIs: g-sziügen und.

in d-sn

n ^ .r3ri. ^

Eslii ^ litdicker. ZcIeinsr als 1 at ss lit dsn most cases ia ^ - szif, "Isolatorschichten der Sirfindtmg 'je eise ulsloIit zu erssuesEi

eat jibi but also if iä ^ e ^ dies nicii ^- fc succeeds ;. ¥ eaa tnari e.g. * sia · ® intrinsic-Halblextsi-ssB ^ & fe-t or © 4äs Isolators ^ so * t- £? Ei ~ fc with very high '£ -snäabs "äsd (sB, üfc!> Ss eV) mostly , then there is practically germinating .good conductive Schottlcy contact more, ier - &? = & · hiiiraisc-snl iiilü Ya ^ um ^ Austrioisaroaiten has.,

n "a forms in the insulator .. M ^ n then erliält in MSBI-order in accordance with the invention, z ^ rel Veiraarffiungs-Randsciixcliten in jecisr Xoiie I. Mash'- one js-iocli the Ealbleitsr- bsw" insulator = süiücfcteri = d _t £ ₅ thus the üc ^ e Σ »= S3 düsin, Ιεώ from2i without

not) possible, then also know diss @ Men3. "^ • eüiäii der ErjfisdiiKg as Gleicuri.siitäS '-ben» itst. -7erd'3ri _a Da ^ ei-iea tiieriai ^ chen exit fcs & rbsItsi :: isi the Sens X ver c2e; i sii * d, -vird when applying eiSiCi 'WeGaselspanziTU-rag? x this Aa order en the sine Stromrichtung eliss * du ^ cligs Lassen as the andürö.They ätroiudiciiwe j duroii eixixix T'axiaelZsDatairä hangs belcr.i be ⁵ strong van der 3ffek'ii'y-3ii tlt ^ cai vrittsarbait t "(1: 21c rr -.- zcr axt S ¹ H *) from" Ee-. '"-" electrical ¥ iderst £ -Kde Cia des 'sicea R & ®b ~ - \ .-., :: ■■ ",'

The basis of the invention is ic-sa

: ·: '! ■' - HIIf ^ -yoiz Ql.vj.r.'rjins l5i

^ ioZi-ii that.

on the l

yes to i. ~

H an anordsrrij ssma Ιέ den ■

2a to 2n au can be obtained χ., Even thicker do. Izn al Ig a inen, the rail will be thick n-i ^. the semiconductor or »insulator layers (zone Ξ smaller than 10 cm chosen when the multi-pin arrangement .fssiäi of the invention © line enrichment layers works.

The zones I in the .Hehr ζ on en-An order idö-zizien erfindungsge-Biäß also designed as double layers with p- and -d η-line where both the n and p parts are dex * bilayers Concentrations of the majority ^ sl £. -Iiang carriers of

N ^ 10 / cm "'- halls. The Säü- Itea? Le and 2i% ig- 2h, 2i, 2j, 2k, 21 and 2ra show reverse zone arrangements where the Zones I consist of rtp double sciiiclites.

! "While the Ziehz-acnen arrangements 1 a to If only block in one direction, the Mehrzoai-sn-Anc-r-dnungeri 2 a to 2ώ (sum parts different) block in both Arrangements are the thermal external works e, n. The Grens: fl £ ahen ΙΣ / 1 / Ι1 in the zone Z Ιιάί »3Ζ3ΐ. The zones Ϊ1 also know from double» oisr even;>; ahrfachscliichteii li3S'C3l ~. "r. ₅ Sis effective x ^ si'siisciien Elei-ctr Äi2S "Criut; sarbeit3n. Γ! ',.,' Ar. Of the zones ΞΖ ^ ir. Als bsnaeheart to ZiOHQTi Ξ" iisisini siiiG ΐ- ^ i 1.3 srleic-li vjiriä ' ! ■ '-, - £ ~ ^": 3ics'^; ^ z ^ c ^'-' ..-." .. * i

sis if un

■ a to 2n gebsa «The Sos ^ s:.:. "I.

gis ^^ liO ^ l ^ sfc j £ i £ ~ yLgj ^

2 x = 2.0 cn; Gneiss sr.iicä ue2. "Üxj.f6 *" C2i -üio ^. * ;;, ._ i. 3

2: 1

i-n ai-C-C

dxGiS π - »Sä-t. ; ϊ.Ξ2.α.ίΰ

BATH ORIGINAL

The contacts 5 to the last and first layer of this multi-zone arrangement according to the invention are known per se Way by alloying or sintering metal contacts appropriate.

Embodiment Ib

On a sapphire disk 1 in Bi * d Ib is a single crystal

+ ^IS * y 3

ρ silicon layer 2 with boron doping of 10 / cm

-4
and grown up to a thickness of 2.10 cm. With the aid of the SiO _Q mask 3, boron ions are initially implanted

20 +

with a concentration of 2.ID the ρ -zones 4 have been generated. Afterwards (also by implantation of phosphorus

Bl 3 _. / cm (with the help of

P speaking masking) the η -zones 5 are formed. The width

Zj.

of zones I (p areas) is 5.10 cm, and the width of the

• Zone II (pa areas) is 1Ö cm. The lattice defects that occurred as a result of the ion bombardment have been healed by appropriate tempering of the arrangement. After the metallic contacts 6 have been attached, this multi-zone arrangement according to the invention is a lateral rectifier in which each zone I blocks up to a voltage of approx. With. This rectifier blocks 10 zone sequences I, II up to U = i00 V i = & 9 = 9 = 4T with a total width of the layer sequences of 0.15 nwi »

Embodiment .. Ic. '- -.

W on a ρ "" silicon = single crystal disk 1 in baru-d lc with a

? 0 '3

Bordoxierung won 5 "1Ö / cm the following layer sequence" is vapor-deposited with the help of the electron beam in a hole vacuum:

= ^c ü 17 3

"lolO .CBi thick Ά silicon with 10 antimony atoms / cm 2

-6 '' ■ + 19 '/ 3

5 »10 cm thick n silicon with 5» 10 antimony atoms / cm. 3

5 ° 1Q em; thick p '«silicon with .5 ο 10 boron atoms / cm ■ 4

O ¹ Ti '- ■ "L 7" 3

1.10 caj '- i.ck -p «silicon with. 10 j3 © r.-atoms / cm 5

-.- C - ^ · 19 3

■ am thick n. «= Silicon with 5 = 10 antimony = atoms / cm 3

esa thick P -silicon -with 5 = 10 ■ Bor * · "atom / cm '. 4th

■ 17 3

"cm thick 'ti. silicon with 10 ™ Ant ± mon = atoms / cm 2

t 0 1 β υ β i ( ι 1 I! ί.S β ί 8 5 Il β S 5 "ί 0« I Il υ 0 ί! H S 0 J ί S ί β H t S t 0 ί t ί S 9 ϊ ί β tt (I ί ί 8! Il

-and so on

6 are metallic contacts. . ■ *! <

The thicknesses of zones I (here by layers 2 and 5 formed) are just enough to cover the space cargo zones (as Consequence of the diffusion voltage to be recorded.

Embodiment Id

Niobium oxide is applied to a niobium sheet metal with the electron beam in a thick tone 5-. 10 em vaporized '«It's platinum on it applied with the help of cathode sputtering 2 »Lö cm thick, then again with the help of the electron beam a layer of niobium 4 vapor-deposited in a thickness of 2. * 10 cm ·, and on

-7

This Niob ^to Sohlclit 4 is again SvXQ sra platinum. 3 dusted on.

After that the whole arrangement is in 5% sulfuric acid amo-_ is oxidized with a voltage U. such that the

Wiob = layer 4 with a thickness of 6 «10 cm in niobium oxide 5 has transformed. ". (The thin platinum squint 3 bothers this ahodic oxidation process not). Then there is another. Layer of niobium oxide 2, platinum 3, niobium 4 and platinum 3 applied * Then the whole arrangement is x-riLsder as an anode 5% sulfuric acid is oxidized at such a high voltage, that the last niobium layer 4 is again in a thickness. = Has transformed 6.10 cm into niobium oxide 5, and so on «

Embodiment Ie

On a 0.2 mm thick single crystal gallium arsenide disc 1 in ®S | rd Ie, which as a result of chromium doping has a specific resistance of 10 cm , is a single crystal gallium arsenide layer which is as free of doping as possible 2 in

a thickness of 3 ° 10 cm aufg © w © clisen ₀ With the aid of planar is "one after the tin with a concentration of 10 dursh di © FensteS" - is erstea 5 "10 cm dictated

Silicon nitride film 3 and daraa «li ■ dureh dia direkt'da- aeben underlying window in the first and swsiätarn" .Silizium "- nitrldschicht 4 zinc with d © r & gleiö to OfoarflMcheiikonzioiitratior indiffundi ^ ^ s * · β 'by disa © QitfnBiotien arise 5 wnö the. ρ <= Β @ £ = @ 1 © ϊΐβ .6, - the "-sieh unt-or the si-

aissö the S @ saos

BAD ORfGfNAL _1-1

■ ■: 1803034-

Lateral Gleicissrlclaiier, in which the flux voltage U _R to the metallic contacts 8 aagese5ilosse * i "The up · = transitions emit-tie ^ ssa the light 9 = ■ *. -. '"'"'' ~ -

Execution exampleX If "- .." "'"' ..- '

On a single crystal silicon cheih.el * ia EäÜ if _s the "-.

BO 3 '

Boron-Atsisen / ess is doped ₅ w ± ru with a Sub = - '

strat-temperature voaa 3GQ C-die- Schiciv & ezifisode vaporized ι

• j - - ■ -

1.10 cm thick "Intsriasia silicon-.". "-. \

1.1 δ cm "thick a ^r <» SiIiziixm with 2 _β Xu phosphorus atoms / cm

I, IO cm thick p "*" ™ 511 iss ium with 2 ".l6 ° Box ^ -Atcsme / cm ³ - - ^

1.10 cm thick I2rfcx * ± ssie Silizi "um - '■" .. ■ - "■" .-' -. "

5 S t 8 SIIJ »S! S I S f ϊ ί SS SF S ί 8 i JSJ β S j? ! 8 5 S 4 ■ »ä 3" i S 8 I υ I f SS Λ t! (.1 -I 8 ä S ί ä i

and so on. . ". ν ■ _-. '" - _ ·

There are a total of 2 "X0 zones I {Iii" ferins-ie ~ Sciiisb.tsEs,) listed ■ evaporated "The Sxllaxiissslisib-e 'on dsx ¹ Sückseite ^- (aperrfrei) up a metal plate soldered 5 and the last two . -Schach.t is with a _: Kreusglttsr · δ von Me deaf ahnen {-sperr fr ei) tiert, so that Sonseenlxch. ^ 7 vertically "aw d $ n Scb.iels.tenf oil can penetrate.

- ^ AjAgfjiiigungjsbeisplel. 2a <- -. -...--.

On a monocrystalline silicon fiber. 1 la Baad 2a with one * ρ «dopieriisig v © xa Io Boar-Atosse / esa is with the help of Epitaxy the © isilsristsllin © layer ^ äfölg © auyfg

—6 - "1S ■ '"' "- 3

0 "cm thick - si« silicon with - ^ »IB '' ^: - ^: I? Iiosph.Qr Atoise / cm ^ ·

cm thick -p -SiXisiu "with 1Ö; B © r" Ätoiae / eia. . "3

-6 - ι S "3

% .1O era thick m ^ SiUsJUaBi with 9 «X" 0 FSa © sph.or <= * Ät © m © / cia - "3-

H Il I I HI I (! Hi UU HfJ til I Π IHä.äSS Sä !! (Ί f f) t! SIi 1 I 1 I H. IU

at? o; i "-?. C'ri tlä., 3 lZ © lctff © aes is A & w middle

Silicon Schxciiten so enriched and held together that through, these Anreidierungssciiichten 4 zones II according to
of the invention, in desil the concentration of the mobile charge carriers is above ID / cm. Each zone sequence of this arrangement, which is formed by the ρ "layers and zone 4, blocks approximately 2 Y in both directions.

Ss are layers with 4.XQ n-silicon layers on

-6 -f

steamed. The last schiclat is a 1.10 cm thick η -

Silicon chi clit 5 evaporated, on which the light 7 laindurchlasseades network 6 of aluminum sheets is located. the Disk 1 is contacted with 8 (also lock-free).

Execution game 2b .

20 3

On a single crystal doped with about 1Ό arsenic atoms / cm Germaniulm disk 1 in s2 * ä. 2b - 2.10 cm thick and 20 χ 20 mm Surface are at a distance of 0.4 ram (through a metal mask

-4 2
through) approx »2500 areas of -10 cm with the following layers

follow steamed -

1 ".1Ö cm thick Calcium '

3 = 10 cm thick an alloy made of 3jö42 g tellurium. + ■ 1.126 gi

Arsenic + Ο ₅ ΐδ3 g SiiiziiiEa -J- O ₃ 35 ^ 5 g Gs I (with the help of Flasfe = -Ye3rd damping)

1.1Ö cm thick platinum

-6 9

3.10 eta-thick. An alloy like Z

and so on.

25 layers X / 11 are vapor-deposited for 2s. The last
Pl at ins chi clit is. with a 1.10 approx. thick GoI ds · chi eh. t 5
Above steam. Danacli the germanium is scratched ± m distance of 0.4 cm with the DxaEiantem and given in such a way that the "2500 multi-zone arrangements are separated" The individual Aa-order is on a gold-plated Kovar sheet ? alloyed, .and. ar. the gold schiciit is a-5 »lQ cm thick gold wire 8 bathed with thicic compressiO33. Danaclv is the arrangement up to 300 ° C
with the help of a high-frequency gas discharge in a negative pressure «SiE ^ -: - I ¹ J _r . Atmosphere iait a 1000 Ά thick silicon bimitride ^ Seiiielit 6

..009832 / 161'S

ORIGINAL BATHROOM

19.D3034

Execution example 2c

Λ -4

On a glass plate 1 in S-2c is a 10 cm thick conductive Lead sulfide layer 2 vapor-deposited. At a distance of

5.10 cm are then two each on this lead sulfide layer

1.-10 cm wide strips 5 x 10 cm thick alternately made of 3 cerium and 4 nickel by vapor deposition. Thereafter, SiO ₂ 5 is vaporized over it that every second lead sulfide strip not vaporized with metal. fen also remains free from the SiO _{o layer.} Through a subsequent,

following heating of the arrangement in sulfur vapor, the exposed lead sulfide strips are converted into p-conductive lead sulfide 6 "- ■ , ■ -

Fe Jie zones of the lead sulphide layer over which metal is evaporated bind, make metallic (in the direction of the lead sulfide layer) are conductive areas and are zones II according to the invention. Metal contacts 7 are attached to the ends of the arrangement.

Execution example 2d

j
The layer sequence is on a titanium disk 1 in Büs-d 2d

applied: ■ - ■

l.lÖ cm thick titanium dioxide thermally evaporated 2

l.iÖ cm thick gold 3

1.1p cm thick titanium dioxide in 0 "reactively sputtered 4

1.1Ö cm thick titanium 5

1..1Ö cm thick titanium dioxide thermally evaporated 2

IIII 1 t IIII 1 S III 1 IIII V II I «IIIIIIIIIII (IIIIIIIIIIIIIIIII ·

and so on. . ·

The titanium dioxide layers 2 and 4 are the zones I according to FIG Invention. . .

Embodiment 2e

On a polished tungsten disk 1 in Bi * <i 2e are the following Layers vapor-deposited:.

008832/1615 ~ ^l6 ~

19Ü3034

O cw thick tungsten oxide 2

^ cm thick Zirikoxyd · '3

Jt .. 10 cm thick cesium oxide 4

1.1 β 'cm thick tungsten oxide 2

Ι.ΐδ ⁷ cm thick Wolfrafii 5

l * l (r em thick Wolfiramoxyd 2

1 * 10 ciii thick zinc vtifid 6

1.10 · em thick tungsten oxide ■ 2 ·

Ο '' cm thick tungsten .. 5

1.10 cm thick Wolfi * ämoxyd ... 2

tt ι ff rfii ι ftf MMtt it ♦ f ι t ι ι rf ι ι ι

tiiid src- f οί * t *

■ 5.

The sliding st eof olg eft, Gs ₀ O-WO ₀ -W- ¹ WO ^ lind WO_-Vr-WÖ ^, sitid die

& j J j j

Z & n & n II according to the invention, the Sciticiite »'ZnO χχηύ ZnS are

le zones I.

e-ine magnesium dheifeo 1 in di 2f are the following layers vaporized:

§ eia a £ öi & Zißkö / xyd 2 ■

1> 1Q ent diicle Fteth ^ looyaiiin 3

r
JUi§

Cffti

ί ί (H Hf f * rt f Hf M ff M ff If f fl f HH ί MMf

The double components of zinc oxide-phthaloeyanine are the zones ί * of the arrangement.

00-9832 / 1615 - -.-., - ■■■

1803Ü34

Explanatory example I 2g - -.

The following layers are vapor-deposited in a high vacuum on a metal plate 1 in%:

_ 6

1.Ϊ0 cn * thick Caesxuia-Äiitimönid 2

5.10 cm thick antimony trioxide 3

1.1Ö cift dick Äntimoiitri sill fid 4

⁷ cm thick nickel 5

1.1Ö cm thick Gaesitun-Äntimönid -2

ι ι ι I r (t ί tf nt ι ι i ι ι ntdf · ir ι «ι ι τ f ι ι ι i ι ί t i ι.

and £ fö away.

The double layers Antimoat ^ iox ^ d-Antimontristilfid are the zones X of the Änö ± "thin»

2h

ta 3 ^;

Äöf a üiit 5.1 # ΡϊϊοβρίϊΦΐ ^ atoms / cä »dopedö single crystal Ta i

de sequence of views in the Hcrchvakiiura at 35Q ° G

line eermarüiüniseheibe 1 "νοίϊ ZG χ 20 mm in j de Seh

aufged

<sm thick

(xei * räiäKi.ttnS ίίίΐΐ

_β | '. ■ "2ί-0- -;

. »-Jfc-0 '' em dick (xeirräiäKittnS ffiit 1Ö Ätt« Λ

mium

et »thick

Gia dick '

ί f f f * P f ϊ ff f f f f f f f f ί f f f f f * (f H f r * ■

Ϊ & Z & xiem £ & ig && 2 / Zt die Aufammptuttgmn

2 χ Z x l-t3 em pyrolytically with a © 3 * '^ «lO ^ cär Schient überogeii waräaa. After one '' - '''TptopGTfutitWfk'^; ίύ

at 450 C has resulted from slight out-diffusion of Phosphorus and aluminum from the η and ρ layers die Desired zone sequence formed from bar # -d 2h. After tempering the germanium litter has slowly cooled down.

Embodiment 2i

On a single crystal silicon wafer 1 in ä: 2i, the doped with 1.lD phosphorus atoms / cm are the following Layers vapor-deposited in a high vacuum:

5.IO cm thick η η silicon with 5 · 1 "0 antimony atoms / cm)

■ with impoverishment to lü antimony% Atoms at the end * of evaporation)

1.1Ö cm thick p-silicon with Io boron atoms / cm

-4 +

O cm thick M, η-silicon like 2

I I I I I I I I I I r I (I I I I I 1 I I i I I f I I I I i? I ΐ 1} I I t I I I I T I I I t 1 I !! I I I I I 7 I I I

and so on.
The η silicon layers are zones II of the arrangement.

Embodiment 2.j

On a nickel sheet 1 in 2j the following layers are im High vacuum vapor deposited:

2.1Ö cm thick bismuth oxide 2

2.1Ö cm thick bismuth sulphide 3

1.1δ cm thick nickel 4

2.10 cm thick bismuth oxide 2

I! I I I I I! I I 4 11IiIItIIIt (IItIIIIItI) I

and so on. ■. ^lv ' ^: --ί ν; --.-

The V / ismutoxyd bismuth sulfide layers are "the zones I of the ;. 'Arrangement.

y, embodiment 2k - ^{! ! :} - -Λ « -.:;■. ,:;

1 · On a beryllium sheet 1.% n && r4. 2k, the following layers are vapor-deposited in a high vacuum

2.10. cm thick zinc oxide

O ^ cm thick zinc sulfide

, l _; .10- cm thick gold.

1.10 cm thick beryllium 2.10 cm thick zinc oxide «I t IIIIIII t III 1 III! JIIIIIIIIII t IIIII and so on.

The double layers ZnS-ZnO are the zones I of the arrangement.

Embodiment 21

On a monocrystalline silicon wafer 1 in 23? Which is doped with 5.IO boron atoms, the following layers are vapor-deposited in a high vacuum:

3.10 cm thick cadmium sulfide 2

1.10 cm thick cadmium oxide 3

1.10 cm thick cerium k

2.1Ö cm thick ρ -silicon 5

3.10 cm thick cadmium sulfide 2

I I I I I I I I I I C () I 1 I I I I I I I I I I I 9 I I t t I t I I t

and so on.
The double layers CdO-CdS are the zones I of the arrangement.

Embodiment 2m "

The following layers are on a metal plate 1 in BiHH 2m vapor-deposited in a high vacuum:

3.1Ö cm thick chrome 2

l.lÖ ^y cm thick antimony trisulfide 3 1.1Ö cm thick silicon monoxide 4

-7 ■

3.10 cm thick chrome 5

009832/1615

χ ■■■■ · ■ "" -20-

1.1Ö cm thick yttrium 6

1.1Ö cm thick antimony trisulfide 3

-7
1.10 cm thick silicon monoxide 4

1.10 cm thick yttrium .6

1.1δ cm thick antimony trisulfide 2 ·.

ι ι ι ι ι ι ι t ι ι ι ι ι ι r ι ι r ι ι ι ι t ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι

and so on.

The double layers of silicon monoxide and antimony trisulfide are zones I of the arrangement. ■ '

Embodiment '2n

On a monocrystalline silicon wafer 1 in 2n, with a doping of 1-, Ιό "boron atoms / cm, which has a diameter of 60 mm, the following layers are in the maximum vacuum evaporated using electron beam flash evaporation :

2.1Ö cm thick n-silicon with I.IO antimony) _{or similar}

3) atoms / cm ■>

2.10 cm thick p-silicon with 1.1Ό boron atoms / cm 3 2.1Ö cm thick η-silicon like 2

ι ι ι ι ι ι ι ι ι ι »ι« ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι i ι ι ι ι ι ι ι ι ι ι ι ι ι and so on.

Space charge zones form between the ρ and η layers which are the zones I according to the invention. In the middle of the n and p layers are as a result of the space charge the moving load carriers are enriched. These very thin enrichment layers 4 and 5 are zones II of the Arrangement according to the invention. There are 10 layer sequences n-p vapor-deposited, so that a cylinder from the silicon wafer 4 cm high.

-, ^ 190 3 03 ^ ,. ,

If one makes the electric field strength sufficiently large in the arrangements la to If and 2a to 2n by making U. sufficiently large and / or χ. makes sufficiently small, then so many electrons are brought from traps or from the valence band into the conduction band that ^Γ > -Μ switches through the multi-zone arrangement. If one uses a'ls - '■' · zones I thin layers of. amorphous semiconductors, vrie'z. B. 'ί' ^ selenium, tellurium, germanium, silicon, arsenic, antimony, anti-ί; "■ -" monosulfide and many others, then with sufficiently! High "*> ν electric fields in these zones I even a" flipping] '"of the amorphous state into the crystalline state can take place,

4 thereby increasing the conductivity of these zones by about the factor

fe increases. With a sufficiently large current surge (sufficiently high temperature) this zone folds back into the amorphous state back..If the layer thickness χ. sufficient

-5 ¹

is thin (- ^ 10 cm), this folding back into the amorphous state can also occur spontaneously, as long as the electric field strength falls below a critical value Multi-zone arrangements la to If and 2a to 2n can be according to the invention in this way as "memory elements" and. use electronic switches. The embodiment 2b

shows in B ± M 2b * an electronic switch according to the invention. ...-- ..

"The solid-state multi-zone arrangement according to the invention, W, however, be used not only as a rectifier and switches. It is especially interesting for the conversion of light and heat energy into electrical energy and for the conversion of electrical power into light Emission and heat currents: If multi-zone arrangements with an alternating sequence of positive and negative space charge zones, as described in B 2a to 2n, are used, then irradiated light is generated, e.g. in 2a perpendicular to FIG (in the space charge zones 2J electron-hole pairs that are separated by the space charge zones. The photo voltages occurring as a result of these charge carrier separations at the space charge zones compensate each other in pairs, but generate additional electrical conductivity in the arrangement. Between the first and last space charge zones of this arrangement creates a

Q-Q9.8-32 / iet! bad original

Photo voltage that is not compensated. 1 and 6 are the Stromai closings of this photo element. The advantage over normal photo elements consists in that less generated Carrier pairs are lost again through recombination.

The arrangements 2a to 2n can also be used as a photoresistor. A photo resistor in the form of a lateral one Multi-zone arrangement is shown by 2c when light is radiated perpendicularly to 1. By exposure to light becomes the electrical resistance between the contacts 6 changes.

Particularly interesting are photo elements that are arranged as multi-zone »arrangements according to la - If are constructed. They contain a sequence of space charge zones which all have the same sign. The photo voltages that occur as a result of light absorption in the space charge zones therefore do not compensate each other, but add up. As a result of this, a total photo voltage occurs at these photo elements which is equal to the sum of the individual photo voltages. The light can be irradiated perpendicular, parallel or at any desired angle to the plane of the zones I and II.

In picture. If a multi-zone arrangement is shown which, when irradiated, for example, with sunlight perpendicular to the uppermost η -silicon layer 3, emits a photo voltage U "between the cross-grating tip 6 and the metal plate 5, which is more than a factor of 10 higher (of course also with a much higher "internal resistance ^11" ) than the photo voltage of a single solar cell.
Such high-voltage photo elements can, however, also be produced in a lateral sequence of the zones. In 3 is on

-4 ■

a quartz plate 1 a 1.10 cm thick layer of indium phosphide vaporized and tempered by sublimation (below 700 C) in a high vacuum. It has a carrier concentration of 10, is η-conductive and coarsely crystalline. At a distance of 2.10 cm

-4? _5 are strips 3 made of copper selenide 10 cm wide and 3.10 cm thick and strips of cadmium selenide 4 with a width of

-4 -5

2.10 cm and a thickness of 3 * 10 cm on the indium phosphide layer 2 evaporated. The cadmium selenide strips 4 are over the copper selenx strips 3 adjusted so that they are straight

009832/1615

cover. The entire arrangement is covered with a SiO ₀ layer 4.10 cm thick, which is only open for metal contact at the ends of the arrangement. The high-voltage photo element according to FIG. 3 has a maximum sensitivity for perpendicularly incident green light 7 and supplies a total photo voltage U "at 6, which is proportional to the number of lateral zone sequences I / II (indium phosphide / selenide-vaporized indium phosphide).

Of course, you can also set the blocking resistance from Rectifiers according to la to If and 2a to 2n by the irradiation of light perpendicular, parallel or change or modulate an angle to the sequence of layers. In this way, according to the invention, active control elements are obtained, with those with the help of a relatively small change in the incident light intensity a strong change of the reverse current in the multi-zone arrangement and thus a power gain, i.e. a ratio

Change in electrical power ^. ι is achieved.

Change in light intensity

At. Applying a forward voltage to the arrangements la to If takes place with a suitable choice of zones I of the multi-zone arrangements as a result of recombinations or radiant

t transitions from charge carriers cause an emission of light. As W Ti «.

n- or p-layers in la to If are e.g.

Gallium arsenide for infrared emission, gallium arsenide phosphide for the emission of red to green light and ZinksVlfid , Boron phosphide, silicon carbide etc. or also "tunneled through" Layers of oxides such as zirconium oxide, titanium dioxide, etc. for the emission of white or blue light. Since the

_o emission of light primarily in the overall space charge zones * P schieht, the multi-zone arrangement according to the invention for t "> the preparation of electroluminescent lamps of high inten-

.-> »sity is particularly suitable as its interior space is predominantly

ay part of space charge zones is fulfilled. __

"" * 'If one attaches to the multi-zone arrangements according to FIGS. 2a to 2n AC voltage with "so high a frequency that a noticeable current begins to flow, then with a suitable

Choice of the material of the zones I also here part of the recorded electrical power can be radiated in the form of light. The material for zones I can be used here e.g. also the known phosphors and phosphors in the form of use thin layers.

The multi-zone arrangement according to the invention is also suitable for emitting light in a lateral form. If you place e.g.

A sufficiently high forward voltage U_ _{r is applied} to the contacts 7 in Ie, then the np transitions emit the known light of the gallium arsenide light-emitting diodes. The advantages of the arrangement "according to Ie * are that the np-junctions can be cooled very effectively and that a higher light intensity is achieved due to the many np-junctions.

The multi-zone arrangement also has advantages as a thermocouple and Peltier element. According to the invention, the zones I of n- or p-semiconductor material are made so thin that as a result of the then very high field strength between zones I and II (even without external voltage), movable charge carriers are released from electron traps or from the valence band, or that the tunnel effect creates additional conductivity, then a relatively large current also flows in the reverse direction with the slightest external voltage. The zone sequence II / I / II has thus become a thermoelectric or Peltier contact, the maximum Peltier voltage II _y _T T / jj of which is equal to the bandwidth of the semiconductor:

In the case of zone sequences II / I / II without an enrichment border layer, So e.g. if insulator layers are used, the layer thickness x must also be used. the insulator layer must be so thin that electrical conductivity in both directions due to the tunnel effect is available. Then this contact is also Il / l / II has become a chermoelektrisclifm contact, its Peltier voltage is greatest when the layer thickness x. has just such a magnitude that the direction of the current coincides with the higher blocking resistance sets in with the additional tunnel line. Q09832 / 1615

It is easy to estimate that the work factor A is false the approximation to an ideal heat engine, which has A = • Θ- »| __ ^ J Y of a thermocouple as a multi-zone arrangement according to the invention

■ 7a \ Δ ~ - ^ L

11; VL

3
can be greater than 10, if one for the differential thermopower <X according to Eq. (10)

"- T. At

sets and assumes that even in layers that are tunneled through Wiedemann-Fran'z-Lorenz's law applies, i.e. the Lorenz number L does not deviate too much from the theoretical value.

4 shows the multi-zone arrangement according to the invention as a thermocouple for converting the heat flow 1 perpendicular to zones I and II in the electrical power: Thermostrom J_. times thermal voltage U

5 shows the multi-zone arrangement as a Peltier element for cooling the connecting plate 1 from T to T with the Peltier current J_ and the voltage U _p = V'IItt / t τ / ΤΤ '^ V ar & * the number of zones I im N and P legs of the Peltier element)

What is remarkable about these arrangements is first that the Transitions ρ nn and η np represent the high Peltier voltages of Eq. (10) have, while the "degenerate" transitions η ρ and ρ η only the normal (relatively small) pelvic stresses Ij + +

have (whose influence is practically negligible) and, secondly, that the Peltier element according to the invention

° be operated with an optimal voltage \ 7 times greater

<O can, as a normal Peltier element. _tt _ _% The legs of the thermo element es according to k or of the PeI- ¹ ^ tier element according to 5 can be produced in any way according to the type of - * B la to If ader 2a to 2n. Suitable

_ »Embodiments for the zone sequences of the legs are the Id *, lf \ 2e \ 2f ^, 2h \ 2j ^N and 2l \

fh] R. Dahlberg "On the theory of thermoelectric !!

Cooling "time very., For applied" ° ~

Physik 10 (1958) pp. 36l-3b <3

Analogous to the high-voltage photo elements according to the arrangements According to Ia to If, according to the invention, high-voltage thermocouples can also be used as a multi-zone arrangement. For this it is only necessary that in the arrangements according to the la to If the heat flow is not perpendicular through the

Zones I and II flows, but that its direction is one of Forms 90 different angles with the plane of Zones I and II.

6 shows a high-voltage thermocouple in which the heat flow 4 flows through the arrangement parallel to the plane of the zones. On an anodized aluminum plate 1 is electrically_isolated but with good thermal contact an arrangement. According Ic applied perpendicular to zones I and II .. The aluminum plate 1 has the temperature T and the surface 2 of the arrangement has the temperature T ₁ , so that as As a result of this temperature difference, the heat flow 4 flows through the arrangement perpendicular to the zones. The voltage U, ~ between the contact connections 3 is given by:

“J

Sr *

Here, OC is again the differential thermopower after

Eq (12), ν * is the number of zone sequences I / II and ^. respectively.

Pr- are the specific electrical resistances of the η-

or ρ layers in 6.

If one applies an external voltage to the dpLe arrangement according to FIG

on, then this arrangement works as a Peltier element

7 shows a further arrangement as a high-voltage thermocouple. An arrangement according to If, but with a thickness of the intrinsic silicon layers of only 2.10 cm and a total of.; .- „i, .c 10 intrinsic layers (so that a silicon wafer in d If of 30 χ 30 mm area has become a cube of approx. 3 x 3 x 3 cm) is sawn into slices at an angle of 45 (to aen layers), lapped and chemically po ^ .srt, so that 10 _Λ cm thick slices 1 in 6 emerged

009832/1615

that are 2.10 cm thick except for the contacts 3 Quartz layer 2 are coated. The zone sequences I and II in these disks run inclined at 45 to the disk surface. The heat flow 4 perpendicular through the pane 1 generates a thermal voltage U -, which is proportional to the contacts 5 is the number of zone sequences I / II. But since a luminous flux 6 also has a photovoltage U "of the same sign e." Rzeocj | t like the thermal voltage U_, are the arrangements according to the 6 and 7 can also be used as thermal photo elements. Such thermophoto elements can also according to the invention for the light and heat flow are connected in parallel and / or in series and also electrically in parallel and / or in series. This allows the voltages and currents output to be changed as desired.

The solid-state multi-zone arrangement according to the invention can also be understood as a sequence of electrical dipoles in which all dipoles are rectified in a zone transition I / II or II / I and in which the polarity of the dipole layers is electrically in Series connected (according to ^ the la to If) and alternating once (according to fi 2a to 2n). The multi-zone arrangement (for example in exemplary embodiment 2n) can therefore also be understood and used as a material with a high dielectric constant, such as barium titanate, strontium titanate W or lead zirconate, ie as a piezoelectric or ferroelectric material. __ ^

According to the invention, the Ihr zone arrangement according to FIGS. 1 a to 1f has because of the series connection of the polarity of the dipole layers electret properties, such as the arrangements according to le or If.

Since the multi-zone arrangement according to the invention piezoelectric, and / or ferroelectric material, it is also of interest as a superconductor I 5J

5 I W. Klose "Superconducting Semiconductors" in solid-state. "probleme VII" pp. 1-17, publisher Fr. Vieweg &

Son, 1967 _ _A _

009832/1615 ^ßAD

8 shows an arrangement (corresponding to -11a) in which a layer of n-conducting strontium titanate 1 (due to excess titanium) with 10 carriers / cm is used as the semiconductor. Your layer thickness is so small x. = 10

that as a result of the different thermal work functions (at the border to the platinum layer 2 and at the border to the cesium-antimonide layer 3) there is a field strength of about 10 volts / cm in the layer which is sufficient to allow the arrangement to cool down sufficiently (under d £ e transition temperature T in a cooling bath k) superconducting

C *

close. The superconductivity of the _m arrangements la to If and 2a to 2n according to the invention can be used both perpendicularly and parallel to zones I and II.

Superconductors which are mechanically particularly easy to work with can be produced if one according to the invention thin layers of organic semiconductors or insulators are used as zone I.

If one uses the multi-zone arrangements as rectifiers, switches, Photo element, photo resistor, thermocouple, Peltier element, piezo or ferroelectric or as a superconductor used together with a magnetic field acting parallel or perpendicular to the zones of the arrangement, then leave Build active control elements that become particularly sensitive when cooled below 300 K. If you can get around with help of a magnetic field 5 in 8 the transition temperature T des

Superconductor according to the invention reduced by the amount / äI, active components can be produced with a particularly steep slope.

Do. "Ph. \

9 shows a superconductor which is constructed according to FIG. 2d and is used in parallel to zones I and II. 1 is the titanium layer, 2 is the vapor-deposited TiO 2 layer, 3 is the gold layer and ¹ k is the sputtered TiO 2 layer. 5 and gold contacts perpendicular to the zones. 6 is the cooling bath for cooling below the transition temperature, and 7 is a magnetic field.

009832/1615

Claims (35)

1. Solid-state multi-zone arrangement from an alternating Sequence of two zones with different electrical resistance, characterized in that zone I Made of semiconductor or insulator material with a concentration of mobile electrical charge carriers N ^ 10 / cm and zone II is so highly doped Semiconductor or metallically conductive material is that it has mobile electrical charge carriers in one concentration N ^ 10 / cnT contains that the interfaces II / I / II have different thermal work functions for electrons in zone I, and that the expansion of each individual zone in at least one dimension small -3
is less than 5 x 10 cm. 2. Solid-state multi-zone arrangement according to claim 1, characterized in that the thermal electron work functions the interfaces I / II / I are the same size. 3. Solid-state multi-zone arrangement according to claim 1, characterized in that the thermal electron leakage work of the interfaces I / II / I are of different sizes. k. Solid-state multi-zone arrangement according to Claims 1 and 3, characterized in that the different thermal electron escape functions at the interfaces I / II / I come about in that the zones I consist of semiconductor material with n- and p-conductivity. 5 »solid state multi-zone arrangement according to claims 1 and 3 characterized in that the different thermal electron work function at the interfaces I / II / I come about in that the zones are formed I fared as double layers with NP and / or pn-Ov « 009832/1615 6. Solid-state multi-zone arrangement according to Claims 1 and 3 a characterized in that the different thermal ■ see electron exit work at the interfaces I / II / I come about because zone II is a double or multi-layer is formed. 7 · Solid-state multi-zone arrangement according to claims 1 to 6 characterized in that the multi-zone arrangement comes about by layering zones I and II, so that each zone is smaller than in only one dimension _3
5- IQ cm. 8. Solid-state multi-zone arrangement according to Claims 1 to 6 characterized in that the multi-zone arrangement comes about by layering zones I and II next to one another, ■ “3 so that each zone is smaller than 5.10 cm in two dimensions is. 9. Solid multi-zone arrangement according to one of the preceding claims, characterized in that as zone I n- or p-doped inorganic, crystalline or "amorphous ¹¹ element or compound semiconductors, such as silicon, germanium, tellurium, selenium, or amorphous arsenic amorphous antimony, AB
be turned. Antimony, A B, A B, A B compounds, etc. 10. Solid-state multi-zone arrangement according to one of the preceding claims, characterized in that the zone, I organic semiconductors such as cyanines, thiazines, phenazines, pinacryptols, triphenylmethanes, etc. are used 11. Solid-state multi-zone arrangement according to one of the preceding Claims characterized in that as zone I inorganic or organic insulators, such as oxides, Hadtygenides or epoxies, saturated hydrocarbons etc. can be used. 009832 / 161S _ ₃ _ 12 .. Solid multi-zone arrangement according to claims 9 to 11 characterized in that the zones I are so thin that they have additional electrical conductivity as a result of the field effect and / or tunnel effect. 13 · Solid-state multi-zone arrangement according to one of the preceding Claims characterized in that highly doped semiconductors, metallically conductive connections as zone II or metals are used. 14. Solid multi-zone arrangement according to claim 13, characterized in that η and ρ semiconductors or pairs of ™ metallically conductive connections or metal pairs scbr- different vacuum exit works to have. 15 · Solid-state multi-zone arrangement according to claims 13 and l4 characterized in that the thermal work functions at the interfaces of zones II with the help of tunnelable foreign layers of a thickness below 1.10 cm can be generated, and that for small vacuum work, e.g. alkali or eralkali mixed oxides, such as cesium-tungsten oxide, cesium-silver oxide, barium-strontium oxide and others and for large vacuum work, k e.g. foreign layers of magnesium oxide, tungsten oxide, etc. be used. l6. Solid-state multi-zone arrangement according to one of the preceding Claims characterized in that. Zones I and II by thermal evaporation at high or maximum vacuum through reactive atomization High frequency cathode sputtering, with the help of ion beams, on chemical, electrochemical, pyrolytic or by mechanical means e.g. by layering foils and subsequent pressing and / or val / en, as well as by "flame spraying" e.g. with the plasma jet ooor through a combination of the methods mentioned in ar. are produced in a known manner. 009832/1615 ^ original ³³ 1303034 17 · Solid-state multi-zone anorairation according to one of the preceding Claims characterized in that it is used as an electrical rectifier or as a diode. l8. Solid multi-zone arrangement according to one of the preceding claims, characterized in that it is as electronic switch is used. 19 · Solid-state multi-zone arrangement according to one of the preceding Claims characterized in that it is used as an electronic storage element. 20. Solid-state multi-zone arrangement according to one of the preceding Claims characterized in that it is used as a light-controlled diode or switch .. 21. Solid-state multi-zone arrangement according to one of the preceding Claims characterized in that it is used as a magnetic field-controlled diode or switch. 22. Solid multi-zone arrangement according to one of the preceding claims, characterized in that it is as Photo element is used for electromagnetic and / or ionizing radiation or as a solar cell. 23 · Solid-state multi-zone arrangement according to one of the preceding Claims characterized in that it is used as a high-voltage photo element or high-voltage solar cell is used. 2k » solid multi-zone arrangement according to one of the preceding claims, characterized in that it is used as a light-sensitive or light-controlled electrical resistor. 25 · solid-multizone Anordming according to one over the preceding "r ^ © nganen claim characterized in that it contains as Magiiefcfeld-Qmpfindlicher or" ideratand gseteuerter electrical ¥ we wounded egg. 009832/161 ^ -5- 26. Solid-state multi-zone northing according to one of the preceding Claims characterized in that "they as .Thermocouple or high voltage thermocouple for energy conversion or measurement is used. 27. Solid-state multi-zoneji arrangement according to one of the preceding Claims characterized in that they are used as a Peltier element or high-voltage Peltier element reversible cooling or heating is used. 28. Solid-multi-pin arrangement according to one of the preceding claims, characterized in that it is used as a heat-sensitive electrical resistor, for example as
Radiation bolometer is used. 29 Solid multi-zone arrangement according to one of the preceding claims, characterized in that it is perpendicular and / or parallel to the plane of zones I or II
is traversed by a flow of light and / or heat. 30. Solid multi-zone arrangement according to one of the ~ preceding claims, characterized in that it is at an angle which is different from 0 and 90, of
a stream of light and / or heat has flowed through it, 31. Solid-state multi-zone arrangement according to one of the claims 22-29, characterized in that several mel-zone arrangements for the heat flow and / or ion luminous streaks as well as electrical in series and / or par & li-ai gesebaJ ".t, vi '^ will. 32. Solid multi-zone arrangement according to one of the preceding claims, characterized in that it is as piezoelectric or ferroelectric material is used. -4 υ Xi * - ■ i, c -! C. 33 · Solid-body multi-zone arrangement according to one of the preceding Claims characterized in that they as Superconductor is used. 34. Solid multi-zone arrangement according to one of the preceding claims, characterized in that a
Magnetic field acts perpendicular or parallel to the zones. 35. ^ es'ck body multi-zone arrangement according to one of the preceding Claims characterized in that the arrangement is set to temperatures below room temperature we cooled down d. , 6. icst body multi-zone arrangement according to one of the preceding Claims characterized in that the arrangement is a component in an integrated circuit is used. BATH ORIGINAL 009832/1615 Blank page