CS28288A1 - Connection for turn-off time end determination with switch formed at least by one bipolar transistor - Google Patents

Connection for turn-off time end determination with switch formed at least by one bipolar transistor

Info

Publication number
CS28288A1
CS28288A1 CS88282A CS28288A CS28288A1 CS 28288 A1 CS28288 A1 CS 28288A1 CS 88282 A CS88282 A CS 88282A CS 28288 A CS28288 A CS 28288A CS 28288 A1 CS28288 A1 CS 28288A1
Authority
CS
Czechoslovakia
Prior art keywords
turn
connection
bipolar transistor
end determination
time end
Prior art date
Application number
CS88282A
Other languages
English (en)
Other versions
CS268232B1 (en
Inventor
Antonin Rndr Csc Kokes
Original Assignee
Kokes Antonin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokes Antonin filed Critical Kokes Antonin
Priority to CS88282A priority Critical patent/CS268232B1/cs
Priority to BG8675389A priority patent/BG49807A1/xx
Priority to EP19890100507 priority patent/EP0324487A3/en
Publication of CS28288A1 publication Critical patent/CS28288A1/cs
Publication of CS268232B1 publication Critical patent/CS268232B1/cs

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18Modifications for indicating state of switch
CS88282A 1988-01-15 1988-01-15 Connection for turn-off time end determination with switch formed at least by one bipolar transistor CS268232B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CS88282A CS268232B1 (en) 1988-01-15 1988-01-15 Connection for turn-off time end determination with switch formed at least by one bipolar transistor
BG8675389A BG49807A1 (en) 1988-01-15 1989-01-04 Device for determinating the edge of switching off of switcher, made from bipolar transistor
EP19890100507 EP0324487A3 (en) 1988-01-15 1989-01-13 Circuit arrangement for determination of the end of disconnection time interval of a switch comprising at least one bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS88282A CS268232B1 (en) 1988-01-15 1988-01-15 Connection for turn-off time end determination with switch formed at least by one bipolar transistor

Publications (2)

Publication Number Publication Date
CS28288A1 true CS28288A1 (en) 1989-07-12
CS268232B1 CS268232B1 (en) 1990-03-14

Family

ID=5334678

Family Applications (1)

Application Number Title Priority Date Filing Date
CS88282A CS268232B1 (en) 1988-01-15 1988-01-15 Connection for turn-off time end determination with switch formed at least by one bipolar transistor

Country Status (3)

Country Link
EP (1) EP0324487A3 (cs)
BG (1) BG49807A1 (cs)
CS (1) CS268232B1 (cs)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3434607A1 (de) * 1984-09-18 1986-03-27 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum betreiben eines abschalthyristors
US4698582A (en) * 1986-07-23 1987-10-06 Motorola, Inc. Power driver having short circuit protection

Also Published As

Publication number Publication date
CS268232B1 (en) 1990-03-14
EP0324487A2 (en) 1989-07-19
BG49807A1 (en) 1992-02-14
EP0324487A3 (en) 1990-09-19

Similar Documents

Publication Publication Date Title
EP0450082A4 (en) Insulated gate bipolar transistor
EP0416805A3 (en) Transistor with voltage clamp
EP0297886A3 (en) Heterojunction bipolar transistor
EP0190925A3 (en) A driving circuit for an insulated gate bipolar transistor
DE3583119D1 (de) Bipolartransistor mit heterouebergang.
EP0314221A3 (en) Semiconductor switch with parallel ldmos an ligt
EP0313749A3 (en) Heterojunction bipolar transistor
EP0551185A3 (en) Heterojunction bipolar transistor
EP0228107A3 (en) Fast switching lateral insulated gate transistors
KR0134778B1 (en) Lateral transistor with elongated emitter
EP0338312A3 (en) Insulated gate bipolar transistor
GB2255228B (en) Insulated gate bipolar transistor
EP0278386A3 (en) Heterojunction bipolar transistor
GB8907644D0 (en) Mosfet power switch arrangements
EP0273363A3 (en) Heterojunction bipolar transistor with ballistic operation
EP0559910A4 (en) BIPOLAR TRANSISTOR WITH INSULATED GATE
EP0303435A3 (en) Bipolar transistors
EP0478004A3 (en) Insulated gate transistor operable at a low drain-source voltage
EP0550962A3 (en) Heterojunction bipolar transistor
EP0343879A3 (en) Bipolar transistor
EP0268531A3 (en) Bipolar transistor switching enhancement circuit
EP0333997A3 (en) Bipolar transistor
CS28288A1 (en) Connection for turn-off time end determination with switch formed at least by one bipolar transistor
DE3888602D1 (de) Bipolartransistor mit Heteroübergängen.
IL92085A0 (en) Darlington connected switch having base drive with active turn-off