CS269118B1 - High-duty semiconductor module - Google Patents

Abstract

The purpose of the solution is to create a high-level integration power semiconductor module that is equipped with a large number of semiconductor systems. The stated purpose is achieved by stacking the semiconductor systems one above the other and pressing them with a single pressing structure to the connecting and lead-out plates and to the cooling pin.

Description

The invention relates to a power semiconductor module of a higher degree of integration, which is equipped with a plurality of power semiconductor systems.

Power semiconductor modules are used for control, rectification, regulation and control of alternating current. They are usually equipped with two semiconductor systems, especially diode, thyristor or transistor, or combinations thereof.

For the power semiconductor module according to MS. of the author's certificate No. 226 323, each semiconductor system has its own cooling pin to which it is pressed by its own pressure structure. The cooling pin passes through the plate and forms the outer bearing surface of the module. The semiconductor system is electrically insulated from the cooling pin by a ceramic pad inserted between the pin and the terminal plate, but the semiconductor system is thermally connected to the cooling pin. The pressure structure consists of disc springs and a crossbar mounted on the insulating insert, the screws passing through the crossbar are anchored in the support plate. Semiconductor systems are connected to each other by interconnecting or outlet plates, which form the external leads of the module.

With a higher blunt integration, where the interconnection of several semiconductor systems is required, the semiconductor module must be equipped with several cooling pins, or several semiconductor modules must be interconnected. These measures lead to an increase in the dimensions and weight of the modules or module assemblies on the heatsink.

The requirement of higher integration is met by the power semiconductor module according to the invention, the essence of which consists in that at least two semiconductor systems are placed on top of each other on the cooling pin. the semiconductor systems are pressed by the pressure structure over the terminal plate contact and the upper contact adjacent to the upper semiconductor system. The placement of semiconductor systems on the cooling pin is done so that the system closer to the pin has the same or larger diameter than the system above it.

The construction of the semiconductor module according to the invention ensures a higher degree of integration of the semiconductor modules while maintaining the external dimensions and allows the realization of more complex internal connections.

An exemplary embodiment of a power semiconductor module according to the invention is shown in the accompanying drawing, in which a section of a semiconductor module with two cooling pins is shown, each of which has two semiconductor systems.

Semiconductor systems 3a, 3b, 3c, 3d are arranged in a plastic housing, which ae consists of a cover 1 and a cover 2. The thyrator ayatems 3a, 3b are located above the diode systems 3c, 3d. the systems are thermally connected to the cooling pins 4, from which they are electrically insulated by ceramic pads 5. The semiconductor systems 3a, 3b, 3c, 3d rest on the terminal plates 6, 7, 8, which also form the internal connection of the module. Upper contacts 9 are arranged between the lead-out plates 6, 8 and the thyrator systems 3a, 3b. of disc springs 10 mounted on the insulating insert 11 and the crosspiece 12. The bolts anchored in the support plate 13 pass through the crosspiece 12. In the insulating insert 11, the upper contact 9 there is an opening for discharging the control electrode. The control electrode of the thyristor system 3a and 3b, respectively, is connected to the connector 14 located in the cover 2. The cavity of the module is filled with plastic 15.

The abutment surface of the module is formed by cooling pins 4, in the support plate 13 there are openings 16 for connecting the module to the heatsink.

The design of the power semiconductor module allows the integration of semiconductor structures that are stacked on top of each other, and their higher number minimally increases the space for their storage in the module.

CS 269118 Bl

The power semiconductor module according to the invention can be used in semiconductor technology, for example in converters, rectifiers and the like. .

Claims (2)

BACKGROUND OF THE INVENTION A power semiconductor module, at least frictioned by semiconductor systems housed in a closed housing, with a base formed by a support plate passing through two cooling pins to which the semiconductor systems are thermally connected, but electrically insulated therefrom by ceramic plates adjacent to the cooling pins. , each cooling pin having a pressure structure formed by disc springs mounted on the insulating insert and a crosspiece through which the screws anchored in the support plate pass, characterized in that at least two semiconductor systems (3a,) are arranged one above the other on the cooling pin (3a). 3cj 3b, 3d), abutting on the connecting and outlet plates (6, 7, 8), forming both the inner interconnection and the outer outlets of the module, while the semiconductor systems (3) are pressed against the cooling pin (4) by a pressure structure via the outlet contact sheet metal (6, 8), and an upper contact (9) adjacent to the upper semiconductor system (3a, 3b). 2. A power semiconductor module according to claim 1, characterized in that the semiconductor system (3c, 3d) located closer to the cooling pin (4) has the same or larger diameter than the semiconductor system (3a, 3b) located above the semiconductor system (3c, 3d). ).