CS267358B1 - Method of high-temperature superconductive thin layers preparation - Google Patents
Method of high-temperature superconductive thin layers preparation Download PDFInfo
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- CS267358B1 CS267358B1 CS879535A CS953587A CS267358B1 CS 267358 B1 CS267358 B1 CS 267358B1 CS 879535 A CS879535 A CS 879535A CS 953587 A CS953587 A CS 953587A CS 267358 B1 CS267358 B1 CS 267358B1
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- oxygen
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- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000002360 preparation method Methods 0.000 title abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Riešenie sa týká spósobu přípravy vysokoteplotných supravodivých tenkých vrstiev, ktorého podstata je v tom, že vrstvy sa nanášajú kodepozíciou prvkov vzácných zemin, pričom vákuové nanášanie sa deje pri tlaku kyslíka 10-2 Pa a teplote podložky 550 a 650 °C, po skončení nanášania sa vrstvy temperujú ďa ej pri teplote podložky 550 až 650 °C pri tlaku kyslíka 1 až 3 Pa po dobu 10 až 30 minút, potom je vrstva nechaná v kyslíku s tlakom 104 Pa po dobu 30 až 60 minút pri izbovej teplote. Riešenie má využitie v oblasti kryoelektronických štruktúr, pri príprave detekčných zariadení slabých magnetických polí a príprave štruktúr pre rýchly přenos informácií.The solution relates to a method for preparing high temperature superconducting thin films the principle is that the layers are applied by the codeposition of rare earth elements, with vacuum deposition occurs at oxygen pressure 10-2 Pa and pad temperature 550 and 650 ° C, po at the end of the application, the layers are tempered at a substrate temperature of 550 to 650 ° C under pressure 1 to 3 Pa oxygen for 10 to 30 minutes, then is a layer left in oxygen with pressure 104 Pa for 30 to 60 minutes at room temperature. The solution is used in the cryoelectronic field structures, in the preparation of detection systems weak magnetic field equipment and preparation structures for the rapid transmission of information.
Description
Vynález sa týká spósobu přípravy vysokoteplotných supravodivých tenkých vrstiev na báze prvkov vzácných zemin, napr. Y, Ba, La, Lu atd’., bez dodatočného žíhania v kyslíkovej atmosféře po vytiahnutí z vákuovej aparatúry.The invention relates to a process for the preparation of high temperature superconducting thin films based on rare earth elements, e.g. Y, Ba, La, Lu etc. ', without additional annealing in an oxygen atmosphere after being removed from the vacuum apparatus.
Příprava tenkých supravodivých vrstiev vákuovými metodami, s ciel’om získať vysokoteplotně supravodivé vrstvy na báze prvkov vzácných zemin vyžaduje po vybratí vzoriek z depozičnej vákuovej aparatúry dodatočné žíhanie v kyslíkovej atmosféře pri teplote 800 až 900 °C. V dósledku tohoto dodatočného žíhania dochádza ku kryštalizácii vrstvy v tetragonálnej fáze a pri pomalom ochladzovaní k přechodu do orthorombickej fázy, ktorá je zodpovědná za supravodivosť pri teplotách kvapalného dusíka.Preparation of thin superconducting layers by vacuum methods to obtain high temperature superconducting layers based on rare earth elements requires additional annealing in an oxygen atmosphere at 800 to 900 ° C after sampling from the deposition vacuum apparatus. As a result of this additional annealing, the layer crystallizes in the tetragonal phase and, with slow cooling, the transition to the orthorhombic phase, which is responsible for superconductivity at liquid nitrogen temperatures.
Medzi známe postupy přípravy supravodivých vrstiev patří napr. příprava vrstiev YiBa2Cu3Ov viď Dijkkamp, D. — Venkatesan, T. — Wu, X. D. and al.: Preparation of Y-Ba-Cu Oxide superconductor thin films using pulsed laser evaporation from high Tc bulk materiál, Appl. phys. lett., 1987, 51, s. 613 až 629, kde po depozícii sa vtstva vyberie z vákuovej aparatúry a v peci sa dodatočne žíhá v kyslíkovej atmosféře pri teplote 900 °C po dobu 30 minút s následným žíháním pri teplote 540 °C po dobu 10 hodin.Known processes for the preparation of superconducting layers include e.g. preparation of YiBa 2 Cu 3 O layers in Dijkkamp, D. - Venkatesan, T. - Wu, XD and al .: Preparation of Y-Ba-Cu Oxide Superconductor Thin Films Using Pulsed Laser Evaporation from High T c Bulk Material, Appl. Phys. lett., 1987, 51, p. 613 to 629, wherein after deposition, the birds are removed from the vacuum apparatus and the furnace is additionally annealed in an oxygen atmosphere at 900 ° C for 30 minutes followed by annealing at 540 ° C for 10 hours.
Pri doteraz známých postupoch přípravy vysokoteplotných supravodivých vrstiev je nutné po skončení depozičného procesu a vybratí vzoriek na laboratórnu atmosféru používať pec s možnosťou přívodu kyslíka do priestoru, kde sa nachádza vzorka.In the prior art methods of preparing high temperature superconducting layers, it is necessary to use an oven with oxygen supply to the sample area after the deposition process and sampling for laboratory atmosphere.
Uvedené nedostatky odstraňuje spósob přípravy vysokoteplotných supravodivých tenkých vrstiev na báze prvkov vzácných zemin podlá vynálezu, ktorého podstata spočívá v tom, že vrstvy sa nanášajú kodepozíciou prvkov vzácných zemin pri tlaku kyslíka 10’ Pa a teplote podložky 550 až 650 °C, po skončení nanášania sa vrstvy ponechajú vo vákuovej aparatúre pri teplote 550 až 650 °C, pri tlaku kyslíka 1 až 3 Pa po dobu 10 až 30 minút a nakoniec sa vrstva nechá ochladil na izbovú teplotu v kyslíku s tlakom 104 Pa po dobu 30 až 60 minút.The above-mentioned drawbacks are eliminated by the process of preparing high temperature rare earth superconducting thin films according to the invention, which consists in that the layers are deposited by codeposition of the rare earth elements at an oxygen pressure of 10 Pa and a substrate temperature of 550 to 650 ° C. the layers are left in a vacuum apparatus at 550 to 650 ° C, at an oxygen pressure of 1 to 3 Pa for 10 to 30 minutes, and finally the layer is allowed to cool to room temperature in oxygen at 10 4 Pa for 30 to 60 minutes.
Výhoda uvedeného postupu je i v tom, že sa nemusí použiť pec pre dodatočné žíhanie vzoriek, a keďže vzorka je supravodivá už vo vákuovej aparatúre, je možné naparoval ďalšie vrstvy potřebné pri tvorbě elektronických štruktúr bez porušenia vákua, čím zamedzíme degradácii supravodivej vrstvy vodnými parami, resp. iným znečištěním a tak připravil požadovanú štruktúru v dobrej kvalitě, bez degradácie vlastností obvodu.The advantage of this procedure is that there is no need to use the furnace for post-annealing the samples, and since the sample is superconducting already in the vacuum apparatus, it is possible to vaporize additional layers needed to create electronic structures without breaking the vacuum. . other contamination and thus prepared the desired structure in good quality, without degrading the circuit properties.
Tenká vrstva, připravená kodepozíciou z troch termických zdrojov pri tlaku kyslíka 102 Pa, pri teplote podložky 550 °C a hrúbke vrstvy 0,7 pm so zložením blízkým YiBa2Cu3Ox, je po napaření nechaná pri teplote podložky 550 °C a tlaku kyslíka 3 Pa po dobu 10 minút. Následovalo schladnutie podložky na izbovú teplotu pri tlaku kyslíka 104 Pa a vzorka bola ponechaná pri tomto tlaku po dobu 60 minút. Nakoniec vzorka bola vytiahnutá z vákuovej aparatúry a vykazovala supravodivé vlastnosti.A thin film prepared kodepozíciou three thermal sources in an oxygen pressure of 10 2 Pa at 550 ° C substrate and a layer thickness of 0.7 microns Composition In close Yiba 2 Cu 3 O x, the steaming is conducted at the substrate temperature 550 ° C, pressure of 3 Pa for 10 minutes. Followed by cooling down to room temperature, substrate in an oxygen pressure of 10 4 Pa and the sample is left at this pressure for 60 minutes. Finally, the sample was removed from the vacuum apparatus and exhibited superconducting properties.
V druhom příklade je vzorka připravená ako v prvom příklade pri teplote podložky 650 °C, po napaření nechaná pri teplote podložky 650 °C a tlaku kyslíka 1 Pa po dobu 30 minút. Následovalo schladnutie podložky na izbovú teplotu pri tlaku kyslíka 104 Pa a vzorka bola ponechaná pri tomto tlaku po dobu 30 minút. Nakoniec vzorka bola vytiahnutá z vákuovej aparatúry a vykazovala supravodivé vlastnosti.In the second example, the sample is prepared as in the first example at a pad temperature of 650 ° C, after steaming at a pad temperature of 650 ° C and an oxygen pressure of 1 Pa for 30 minutes. Followed by cooling down to room temperature, substrate in an oxygen pressure of 10 4 Pa and the sample is left at this pressure for 30 minutes. Finally, the sample was removed from the vacuum apparatus and exhibited superconducting properties.
Vynález má využitie v oblasti tvorby kryomikroelektronických štruktúr, s možnosťou využitia týchto mikroštruktúr ako senzorov na detekciu slabých magnetických polí, resp. na rýchly přenos informácií s frekvenciou rádovo 101 až 102 GHz.The invention has applications in the field of the formation of cryomicroelectronic structures, with the possibility of using these microstructures as sensors to detect weak magnetic fields, respectively. for the rapid transmission of information with a frequency of the order of 10 1 to 10 2 GHz.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS879535A CS267358B1 (en) | 1987-12-21 | 1987-12-21 | Method of high-temperature superconductive thin layers preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS879535A CS267358B1 (en) | 1987-12-21 | 1987-12-21 | Method of high-temperature superconductive thin layers preparation |
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| Publication Number | Publication Date |
|---|---|
| CS953587A1 CS953587A1 (en) | 1989-07-12 |
| CS267358B1 true CS267358B1 (en) | 1990-02-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CS879535A CS267358B1 (en) | 1987-12-21 | 1987-12-21 | Method of high-temperature superconductive thin layers preparation |
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1987
- 1987-12-21 CS CS879535A patent/CS267358B1/en unknown
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| CS953587A1 (en) | 1989-07-12 |
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