CS247333B1 - A method of preparing high purity acetene - Google Patents
A method of preparing high purity acetene Download PDFInfo
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- CS247333B1 CS247333B1 CS171785A CS171785A CS247333B1 CS 247333 B1 CS247333 B1 CS 247333B1 CS 171785 A CS171785 A CS 171785A CS 171785 A CS171785 A CS 171785A CS 247333 B1 CS247333 B1 CS 247333B1
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Abstract
Riešenie sa týká přípravy vysokočistého acetonu čistoty MOS Selectipur triedy 0 pre potřeby mikroelektroniky použitím fyzikálno-chemických metod čistenia v zariadení z materiálov, ktoré sú odolné koróznym účinkom acetonu. Aceton sa kontinuálně alebo diskontinuálne destiluje za sníženého tlaku alebo pri atmosferickom tlaku v nerezovej alebo sklenenej aparatúre bez přístupu vzduchu. Frakcia sa odoberá pri teplote vypočítanej pódia vzťahu: teplota odběru (°C) = = 56,24° — 0,037950 . Δρ (kPa) . Destilát sa potom vedie priamo na filtráciu cez súpravu teflonových íiltrov rozmerov 1,8 μια, 0,8 μπι, připadne 0,4 μΐη.The solution concerns the preparation of high-purity acetone of MOS Selectipur grade 0 purity for the needs of microelectronics using physicochemical purification methods in equipment made of materials that are resistant to the corrosive effects of acetone. Acetone is distilled continuously or discontinuously under reduced pressure or at atmospheric pressure in stainless steel or glass apparatus without air access. The fraction is taken at a temperature calculated by the relationship: sampling temperature (°C) = = 56.24° — 0.037950 . Δρ (kPa) . The distillate is then passed directly to filtration through a set of Teflon filters of dimensions 1.8 μια, 0.8 μπι, and 0.4 μΐη, respectively.
Description
247333247333
Vynález sa týká přípravy vysokočistéhoacetonu čistoty MOS Selectipur triedy 0 prepotřeby mikroelektroniky použitím fyzikál-ne-chemických metod čistenia v zariadeníz materiálu, ktoré je odolné koróznym účin-kom acetonu.BACKGROUND OF THE INVENTION The present invention relates to the preparation of high purity acetone purity grade MOS Selectipur class 0 microelectronics through the use of physical-chemical purification methods in a material apparatus that is resistant to the corrosion effects of acetone.
Chemikálie používané pri výrobě integro-vaných obvodov pre mikroelektroniku, mu-sia vyhovovat neobyčajne přísným krité-riám čistoty. Z tohoto důvodu nie je mož-né použit chemikálie čistoty p. a., ale jenutné tieto dočišíovať v zariadení, ktoré jepre tento proces vhodné usposobené, a tonielen po stránke konštrukčnej, ale hlavněje zhotovené z materiálu, ktorý absolutnéodolává korózii príslušnej chemikálie. Pridočisťovaní musí byť zariadení tak konštruo-vané, aby vyčištěná chemikália po dočištěnía po filtrácii nepřišla do kontaktu s okoli-tým vzduchom. V opačném případe by sanečistoty vzduchu absorbovali vo vyčištěnějchemikálii a tým by sa chemikália znehod-notila.Chemicals used in the manufacture of integrated microelectronic circuits must meet extremely strict purity criteria. For this reason, the purity chemical p. A. Can not be used, but it is necessary to refine it in an apparatus which is suitable for this process and is structurally designed but mainly made of a material which is corrosion-resistant to the respective chemical. The purification must be so constructed that the cleaned chemical does not come into contact with the ambient air after purification and after filtration. Otherwise, the air purifiers would absorb in the cleaned chemical, thereby depleting the chemical.
Podstatou tohoto vynálezu je sposob pří-pravy vysokočistého acetonu čistoty MOSSelectipur z vopred vyrobeného acetonu čis-toty čistý alebo p. a., ktorý sa uskutečňujetak, že aceton sa diskontínuálne alebo kon-tinuálně destiluje za sníženého tlaku alebopri atmosferickom tlaku v nerezovej alebosklennej aparatúre bez přístupu vzduchu,pričom sa odoberá frakcia pri teplote teplota odběru (°C) = = 56,24° — 0,037950 . Δ p (kPa) , kde Δρ (kPa) je rozdiel atmosferického tla-ku a tlaku, pri ktorom sa destiluje a desti-lát sa vedie priamo na filtráciu cez súpravuteflonových filtrov rozmerov 1,2 tzin, 0,8 ,«m,připadne 0,4 μΐη.It is an object of the present invention to provide high purity acetone purity of MOSSelectipur from preformed acetone purity or purity, which acetone is discontinuously or continuously distilled under reduced pressure or at atmospheric pressure in a stainless steel or glass apparatus without air. taking a fraction at the collection temperature (° C) = 56.24 ° - 0.03750. Δ p (kPa), where Δρ (kPa) is the difference in atmospheric pressure and pressure at which distillation is carried out, and the distillation is passed directly to the filtration through 1,2 tzine, 0,8, m, respectively. 0,4 μΐη.
Pre přípravu vysokočistého acetonu kva-lity MOS Selectipur z technického acetonusa postupuje takto:To prepare high purity acetone, MOS Selectipur from acetone technical grade, proceed as follows:
Technický aceton zo skleněných balónovobjemu 50 až 100 1 sa přečerpá nerezovýmčerpadlom do nerezového (nerez triedy 14jalebo skleněného (sklo druh SIMAX) zá-sobníku. Odtial' sa dávkuje čerpadlom donerezovej alebo sklenenej odparky. Destilu-je sa kontinuálně alebo diskontínuálne priatmosferickom tlaku alebo za tlaku zníže-ného.The technical acetone from 50-100 L glass balloons is pumped through a stainless steel pump (stainless 14 or glass (SIMAX glass) reservoir) from a stainless steel or glass vapor pump, distilled continuously or discontinuously at atmospheric pressure or pressure. lowered.
Destilát sa zachytává do sklenenej před-lohy (sklo druh SIMAX), odtial' sa čerpa-dlom tlačí na filtráciu. Filtračně zariadeniepozostáva z vysokolešteného nerezového rá-mu (nerez triedy 14), v torom sú upnutédva alebo tri teflonové filtre s otvormi pó-rov 1,2 μπι, 0,8 ^m a připadne 0,45 μία.The distillate is collected in a glass preform (SIMAX glass), whereupon the pump is pressed for filtration. The filter device consists of a high-polished stainless steel frame (class 14 stainless steel), two or three Teflon filters with a hole diameter of 1.2 µm, 0.8 µm, and 0.45 µm.
Na vývodný otvor z liltračného zariade-nia sa nasunie skleněný expedičný obal tak,aby sa zamedzil přístup vzduchu do vnútraobalu. Súčasfou technologie přípravy acetonu čistoty MOS Selectipur je i čistenie expedič- ných obalov. Obaly sú skleněné, sklo je tre- tej hydrolytickej triedy. Před naplněním, vy-čištěnou chemikáliou musí byť obal starost-livo vyčištěný najprv zriedenou (1:1) kyse-linou dusičnou, po propláchnutí vodou zrie-denou ,(1:1) kyselinou chlorovodíkovou anakoniec vodou, najprv destilovanou a na-pokon vysokočistou vodou mernej vodivosti0,1 /zS. Voda musí byt tiež zbavená pracho-vých častíc na filtri s rozmermi otvoru 0,45mn. Nakoniec sa obal vysuší filtrovanýmvzduchom. Ďalšie podrobnosti sposobu přípravy vy-sokočistého acetonu sú uvedené v príkla-doch. Příklad 1A glass dispensing package is slid onto the outlet of the filter device to prevent air from entering the interior. MOS Selectipur's acetone purity preparation technology also includes the cleaning of shipping packaging. Packaging is glass, glass is the third hydrolytic class. Prior to filling with the purified chemical, the coating must be cleaned first with diluted (1: 1) nitric acid, after rinsing with water, (1: 1) hydrochloric acid and finally with water, first distilled and high purity. water conductivity0.1 / zS. The water must also be free of dust particles on the filter with 0.45mn apertures. Finally, the packaging is dried by the filtered air. Further details on how to prepare purified acetone are given in the Examples. Example 1
Aceton kvality p. a. sa analyzuje okremběžných postupov podl'a ČSN 686 tiež dife-renciálnou pulznou polarografiou a atomo-vou absorpčnou spektrometriou na obsahchemických nečistot a predpísanou mikro-skopickou metodou na obsah heteročastíc. Výsledky analýzy: Ukazovatel' Hodnota spec. hmot. g/cm3, 2074 °C 0,790 obsah vody 0,29 % odparok 0,0008 % popol 0,0001 % kyslosť ako kyselina mravčia 0,00085 % Fe 0,18 ppm Cr 0,10 ppm Pb 0,01 ppm Ti 0,01 ppm As 0,17 ppm Zn 0,09 ppm Na 0,14 ppm K 0,5 ppm Li 0,01 ppm Cu 0,16 ppm Mg 0,13 ppmQuality Acetone p. A. Is analyzed in addition to the conventional procedures of CSN 686 by differential pulse polarography and atomic absorption spectrometry for chemical impurities and the prescribed micro-scoping method for the content of heterocomponents. Analysis Results: Indicator Spec. wt. g / cm3, 2074 ° C 0.790 water content 0.29% evaporator 0.0008% ash 0.0001% acidity as formic acid 0.00085% Fe 0.18 ppm Cr 0.10 ppm Pb 0.01 ppm Ti 0 01 ppm As 0.17 ppm Zn 0.09 ppm To 0.14 ppm K 0.5 ppm Li 0.01 ppm Cu 0.16 ppm Mg 0.13 ppm
Kovy = Cd, Ni, Mn, Bi, Ga, Sn, Cu, Mo, Vsa nachodia v koncentrácii menej ako Ό,ΟΙppm.Metals = Cd, Ni, Mn, Bi, Ga, Sn, Cu, Mo, Vsa at a concentration less than Ό, pmppm.
Chromatografickou analýzou stanovenýobsah hlavněj zložky je 99,6 %.The main component content of the chromatographic analysis is 99.6%.
Obsah heteročastíc: 1 až 5 ,um 223 000 5 až 25 fzm 12 300 nad 25 μπι 1 350Heterocast content: 1 to 5, um 223 000 5 to 25 fzm 12 300 over 25 μπ 1 350
Acetón sa diskontínuálne destiluje v skle-nenej aparatúre (sklo kvality SIMAX) pritlaku 53,3 kPa. Do předlohy sa odoberiefrakcia s teplotou varu 42 až 43 °C. Destilátsa z předlohy nerezovým čerpadlom přetla-čí cez filtračnú súpravu, ktorá pozostávaz teflonových filtrov s rozmermi otvorov0,8 /xm a 0,4 μΐη. Vyčištěný acetón sa znovaanalyzuje rovnakými postupmi ako prv. Vý-sledky analýzy:The acetone is discontinuously distilled in a glass apparatus (SIMAX glass) at a pressure of 53.3 kPa. A boiling point of boiling point 42 to 43 ° C is removed. The distillate is overpressed by a stainless steel pump through a filter set which consists of Teflon filters with apertures of 0.8 µm and 0.4 µm. The purified acetone was re-analyzed by the same procedures as before. Analysis results:
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS171785A CS247333B1 (en) | 1985-03-12 | 1985-03-12 | A method of preparing high purity acetene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS171785A CS247333B1 (en) | 1985-03-12 | 1985-03-12 | A method of preparing high purity acetene |
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| Publication Number | Publication Date |
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| CS247333B1 true CS247333B1 (en) | 1986-12-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CS171785A CS247333B1 (en) | 1985-03-12 | 1985-03-12 | A method of preparing high purity acetene |
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| CS (1) | CS247333B1 (en) |
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1985
- 1985-03-12 CS CS171785A patent/CS247333B1/en unknown
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