CS245629B1 - Platinum layers etching bath - Google Patents
Platinum layers etching bath Download PDFInfo
- Publication number
- CS245629B1 CS245629B1 CS847285A CS728584A CS245629B1 CS 245629 B1 CS245629 B1 CS 245629B1 CS 847285 A CS847285 A CS 847285A CS 728584 A CS728584 A CS 728584A CS 245629 B1 CS245629 B1 CS 245629B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- bath
- parts
- volume
- platinum
- etching bath
- Prior art date
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000005530 etching Methods 0.000 title claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 5
- 239000003517 fume Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000209049 Poa pratensis Species 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Landscapes
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Řešení se týká lázně pro leptání vrstev platiny z povrchu křemíkových desek. Podstatou řešení je lázeň sestávající z 400 až 600 objemových dílů koncentrované kyseliny chlorovodíkové, 350 až 450 objemových dílů vody a 20 až 50 objemových dílů peroxidu vodíku 30 %. Lázeň je používána při teplotách 70 až 95 °C po dobu několika minut.The invention relates to a bath for etching layers platinum from the surface of the silicon wafers. The essence of the solution is a bath consisting of 400 to 600 parts by volume concentrated hydrochloric acid, 350 to 450 vol parts of water and 20 to 50 parts by volume hydrogen peroxide 30%. The bath is used at temperatures of 70 to 95 ° C for several minutes.
Description
Vynález se týká lázně pro leptání vrstev platiny z povrchu křemíkových desek.The invention relates to a bath for etching layers of platinum from the surface of silicon wafers.
Dosavadní složení lázní bylo založeno na směsích kyseliny dusičné a chlorovodíkové /lučavka královská/. Při odleptávání vrstev platiny v této směsi docházelo k provozním potížím, hlavně z důvodu nerovnoměrného leptáni.The current composition of the baths was based on mixtures of nitric acid and hydrochloric acid (royal meadow grass). The etching of the platinum layers in this mixture caused operational difficulties, mainly due to uneven etching.
Manipulace s lázní byla obtížná a nebezpečná, nebot uvedená činidla jsou agresivní a silně korozivní a způsobují vznik korozivních a toxických exhalátů. Práce bylo nutno provádět v digestoři.Handling of the bath has been difficult and dangerous since the agents are aggressive and strongly corrosive and cause corrosive and toxic fumes. Work had to be done in a fume cupboard.
Výše uvedené nevýhody odstraňuje lázeň pro leptání vrstev platiny podle vynálezu, jehož podstata spočívá v tom, že lázeň je složena zThe above-mentioned disadvantages are eliminated by the etching bath of the platinum layers according to the invention, which is based on the fact that the bath consists of:
400 až 600 objemových dílů koncentrované kyseliny chlorovodíkové,400 to 600 parts by volume of concentrated hydrochloric acid,
350 až 450 objemových dílů vody a 20 až 50 objemových dílů 30% peroxidu vodíku·.350 to 450 parts by volume of water and 20 to 50 parts by volume of 30% hydrogen peroxide.
Lázeň se používá při teplotách 70 až 95 °C a doba leptání je závislá na tlouštce leptaných vrstev platiny, obvykle několik minut.The bath is used at temperatures of 70 to 95 ° C and the etching time is dependent on the thickness of the etched layers of platinum, usually several minutes.
Lázeň podle vynálezu má dobré leptaoí vlastnosti. Leptání je pravidelné a vyhovuje požadavkům polovodičové technologie. Vznik korozivních exhalátů je omezen na minimum. Používané chemikálie jsou k dispozici ve vysokém stupni čistoty /kvalita p.p./ a neobsahují žádné kovové nečistoty ani alkálie nebo ionty s vysokou mobilitou, např. sodík, draslík, lithium, vápník, hořčík, baryum a další.The bath according to the invention has good adhesive properties. The etching is regular and meets the requirements of semiconductor technology. The formation of corrosive pollutants is minimized. The chemicals used are available in a high degree of purity (p.p. quality) and do not contain any metallic impurities or alkalis or ions with high mobility, such as sodium, potassium, lithium, calcium, magnesium, barium and others.
Pro názornost lze uvést příklad složení lázhě:For example, the bath composition is as follows:
500 ml koncentrované kyseliny chlorovodíkové p.p.,500 ml concentrated hydrochloric acid p.p.,
400 ml demineralizované vody a 25 ml 30% peroxidu vodíku p.p.400 ml of demineralized water and 25 ml of 30% hydrogen peroxide p.p.
Směs se použije při teplotě 85 °C a doba leptání trvá cca 5 minut.The mixture is used at 85 ° C and the etching time is about 5 minutes.
Lázeň lze čtyři až. osmkrát regenerovat přídavkem dalších 25ml dávek 30% peroxidu vodíku.Bath can be four to. regenerate eight times by adding another 25 ml portions of 30% hydrogen peroxide.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS847285A CS245629B1 (en) | 1984-09-27 | 1984-09-27 | Platinum layers etching bath |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS847285A CS245629B1 (en) | 1984-09-27 | 1984-09-27 | Platinum layers etching bath |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS728584A1 CS728584A1 (en) | 1985-07-16 |
| CS245629B1 true CS245629B1 (en) | 1986-10-16 |
Family
ID=5421703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS847285A CS245629B1 (en) | 1984-09-27 | 1984-09-27 | Platinum layers etching bath |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS245629B1 (en) |
-
1984
- 1984-09-27 CS CS847285A patent/CS245629B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CS728584A1 (en) | 1985-07-16 |
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