CS237002B1 - Discrete semi-conductor element mis - Google Patents

Abstract

The invention relates to digital semiconductor electronics, and addresses the issue of increasing integration. and thus speed and power semiconductor logic parameters circuits that implement EXCLUSIVE-OR logic functions and EXCLUSIVE-NOR separately a semiconductor component structure MISM [control electrode (1j-insulator (2) - semiconductor layer (7J with semiconductor electrode layers [3j and [4] - the insulator [5j - control electrode (6)]. The semiconductor layer (7) comprises a number minority charge carriers capable of it create only one strong enough the inverse region needed to form a conductive channel between the semiconductor layers connected to the electrodes (3j and (4J) upon activation one of the control electrodes (1) and (6).

Description

The invention relates to digital semiconductor electronics, and addresses the problem of increasing integration. and thus also speed and power parameters of semiconductor logic circuits, which implement logic functions EXCLUSIVE-OR and EXCLUSIVE-NOR, which is realized by semiconductor component of structure MISÍM [control electrode (1j - insulator (2) - semiconductor layer (7J [3j and [4] - insulator [5j - control electrode (6)].

The semiconductor layer (7) comprises a number of minor charge carriers capable of forming therein only a single sufficiently strong inverse region required to form a conductive channel between the semiconductor layers associated with the electrodes (3j and (4J) upon activation of one of the control electrodes (1) and ( 6).

The present invention relates to a discrete semiconductor component MIS capable of independently performing the logic functions EXCLUSIVE-OR and EXCLUSIVE-NOR. The logic circuits that realize this pair of functions form the basis of the addition and coincidence circuits of all digital systems.

The EXCLUSIVE-OR and EXCLUSIVE-NOR logic functions are physically realized according to the general construction principle of all current logic circuits, based on a certain interconnection of a certain number of components of the execution circuit. The number of components in today's most promising semiconductor circuits - MIS and bipolar IIL circuits - varies from 6 to 12 transistors, corresponding to certain speed, power and integration parameters, depending on the logic wiring.

The implementation system, consisting of a single discrete MIS semiconductor component, achieves significantly higher quality parameters - the first control electrode - the first insulator - the semiconductor - the second insulator - the second control electrode, which is based on the fact that the semiconductor contains single inverse regions required to form a conductive channel between the regions associated with the electrodes.

By using the discrete MIS semiconductor component, the size of which is virtually the size of a single MIS transistor, it achieves an equivalent increase in operating speed while reducing power consumption relative to conventional MIS transistors.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates the structure of a discrete MIS semiconductor device of the present invention in a P-type conductivity modification; its control electrode, and in FIG. 3 its connection with a load transistor MIS, as an EXCLUSIVE-NOR logic circuit.

The realization of the logic function EXCLUSIVE-OR / / NRO is based on the control of the inverse phenomena in the semiconductor 7, by the mutual equivalence of two oppositely oriented electric fields controlled by the control electrodes 1, 6 by input variables of the given logic function.

The semiconductor 7 comprises a number of minor charge carriers corresponding to the formation of a single inverse region required to form a conductive channel between the two semiconductor regions 7, connected to the electrodes 3, 4.

The operation of a discrete MIS semiconductor device, with the following characteristics, is explained in the specific work situations:

A threshold voltage is applied to one of the control electrodes 1, 6, for example the first control electrode 1. In this situation, the discrete MIS semiconductor device behaves like a conventional channel-enriched PMIS transistor. Due to the electric field created under the first control electrode 1, a sufficiently strong inverse region is formed below the first insulator 2, due to a sufficient number of minor charge carriers, with the consequent formation of a conductive channel. The situation is exactly the same in the opposite states of the control electrodes 1, 6, with the conductive channel being formed below the second insulator 5.

In addition to the first control electrode 1, the second control electrode 6 is activated in the same manner. Due to the electric field generated under said second control electrode 6, minor charge carriers are exploited from the conductive channel area below the first insulator 2 where their absolute majority is concentrated. their subsequent, ideally symmetrical distribution along the x-axis of FIG. 2. As a result of said distribution of the minor charge carriers in the semiconductor 7, their number makes it absolutely impossible to form a sufficiently inverse region necessary to form a conducting channel in any part whereby the discrete MIS semiconductor device is in a non-conductive state.

With their symmetrical distribution according to FIG. 2, the concentration of the minor carriers increases from the x-axis to the insulators 2, S. There, it may already have values causing leakage currents capable of adversely affecting the voltage levels of the logic states. This negative effect is suppressed by increasing the relationship between the thickness of the semiconductor 7 and the intensity of the electric fields depending on the thickness and specific electrical strength of the insulators 2, 5, and by reducing the difference between the individual subsurface states of the semiconductor 7 and the unbalanced charges in the individual insulators 2, 5. the difference corresponds to the ideal working conditions, while its increase disrupts the symmetrical distribution of the minor charge carriers in the semiconductor 7 when both control electrodes 1, 6 are activated.

From the two operating modes described, taking into account the third possible operating mode, which is given by the idle state of the two control electrodes 1, 6, it follows that the discrete semiconductor component MIS according to the invention is in a conductive state only when the two electric fields are non-equivalent. by applying a threshold voltage to one of the control electrodes 1, B.

The construction according to FIG. 1 - the first control electrode 1 - the first insulator 2 - the semiconductor 7 - the second insulator S - the second control electrode 6, produced, for example, by ESFI technology (epitaxial silicon film on insulators) corresponds to the general marking for individual parts of MIS structures, designation MISÍM.

FIG. 3 shows the wiring of discrete237002

6 MIS semiconductor components according to the invention and output z, working with negative climbs with load transistor MIS, as a logic, EXCLUSIVE-NOR logic circuit with inputs

Claims (1)

SUBJECT A discrete semiconductor component of a MIS design - first control electrode - first insulator - semiconductor - second insulator - second control electrode, characterized in that the semiconductor (7) comprises a number of INVENTION of the minor charge carriers corresponding to the formation of a single inverse region required to form a conductive channel between the semiconductor regions (7 ‘) connected to the electrodes (3) and (4).