CS232182B1 - Power semiconductor element for high close and block voltages - Google Patents

Abstract

The invention of es relates to power semiconductor parts for high locking and locking the voltage at which it is high-voltage PN overhang created in two stages. The first one is placed deep in the depth than 30 µm inside the platform semiconductor component. The second stage of the PN junction is located on the perimeter at the edge of the semiconductor surface components in the depth of 5 to 20 µm. The shallow concentration of shallow impurities in the second degree is lower than 2.10 ^ ® atoms dm "3

Description

The invention relates to a power semiconductor component for high closing and blocking voltages

Increasing the breakdown voltage in the surface portion of the PN junction is most often solved by reducing the angle between the plane of the high voltage junction PN and the plane of the surface in the peripheral part of the system.

However, the chamfering of the edge portions can only be carried out by a complex technological process involving a number of mechanical operations, such as cutting, grinding or sand blasting of a phase with a double bevel angle, the edge of the semiconductor plate having a blade shape which is very disadvantageous from a mechanical point of view.

Similarly, with high-voltage pian- tary transitions, ring-shaped auxiliary transitions.

For high-voltage transitions, the transition depth is greater or comparable to the gap size between the individual annular PN transitions.

The above-mentioned disadvantages are overcome by the solution of the power semiconductor component for high closing and blocking voltages according to the invention, which consists in that the high-voltage junction PN is formed in two stages, the first located at a depth greater than 30 µm inside the surface of the semiconductor component. the PN transition degree is located at the periphery of the peripheral surface of the semiconductor device at a depth of 5 to 20 µm, the surface concentration of shallow impurities in the second stage being less than 2.10 ^ atoms οβΓ \

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Alternatively, in the second stage of the PN junction, at least one groove is formed in the peripheral portion of the semiconductor component with a depth equal to 0.5 to 1.5 times the depth of the EU junction in the second stage.

The power semiconductor device according to the invention brings a considerable simplification of the technological process. It eliminates the problems of mechanical breakdown of individual structures rounded from large diameter semiconductor plates, eg by ultrasound, laser or sandblasting, and replaces this sophisticated technique with a conventional and inexpensive cutting and breaking technique without much demand for fracture quality. Furthermore, it eliminates the phase grinding technology and the problems associated with mechanical damage to the edges of the cutting edges.

Three exemplary embodiments of a power semiconductor component according to the invention are shown in the attached drawing.

Fig. 1 shows a semiconductor component with a two-stage high-voltage PN junction, Fig. 2 shows an identical component with two grooves in the peripheral part, and Fig. 3 shows a component with two high-voltage junction PNs.

The first stage 1 of the high voltage transition PN 6 is formed in a volume of the semiconductor component at a depth greater than 30 µm and the second stage 2 of the PN transition is located on the periphery in the peripheral part of the flat semiconductor component at a depth of 5-20 µm. The space charge region 4 projects to the surface in the edge portion of the second stage 2 of the PN junction. The breakdown voltage in this product is the ^one where PN junction extending to a surface component is higher than the breakdown voltage of volume.

FIG. 2 shows the same semiconductor component as in FIG. 1, but grooves 2 are also formed in the peripheral part of the second stage 2 of the PN 2 transition, for example by etching. The groove depth is equal to 0.5 to 1.5 times the depth of the PN junction in the second stage 2. The groove design allows further increase of the closing and blocking voltage of the component.

Fig. 3 shows an exemplary embodiment of a power semiconductor component according to the invention in which two high-voltage PN jumps are provided in two stages located on both sides of the semiconductor system.

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The invention will find application in the production of power semiconductor diodes and thyristors, particularly suitable for power semiconductor modules.

Claims (2)

Object of the invention 1. A power semiconductor component for high closing and blocking voltages comprising at least one high voltage junction PN, characterized in that the high voltage junction PN (5) is formed in two stages, of which the first (1) is located at a depth greater than 30 µm. within the surface of the semiconductor device and the second stage (2) of the PN / 5 transition is located on the periphery at the peripheral surface of the semiconductor device at a depth of 5 to 20 yum, the surface concentration of shallow impurities in the second stage being less than 2 · 10 ³ atoms cm , Power semiconductor device according to claim 1, characterized in that in the second stage (2) of the junction PN (5), at least one groove (3) is formed in the peripheral part of the semiconductor device with a depth equal to 0.5 to 1.5 times the transition depth PN / 5 / in the second stage / 2 / ·