CN87208366U - High frequency crystal thyratron - Google Patents

High frequency crystal thyratron Download PDF

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Publication number
CN87208366U
CN87208366U CN 87208366 CN87208366U CN87208366U CN 87208366 U CN87208366 U CN 87208366U CN 87208366 CN87208366 CN 87208366 CN 87208366 U CN87208366 U CN 87208366U CN 87208366 U CN87208366 U CN 87208366U
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China
Prior art keywords
utility
power supply
model
turn
time
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Withdrawn
Application number
CN 87208366
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Chinese (zh)
Inventor
王培清
张斌
陈永琪
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Tsinghua University
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Tsinghua University
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Application filed by Tsinghua University filed Critical Tsinghua University
Priority to CN 87208366 priority Critical patent/CN87208366U/en
Publication of CN87208366U publication Critical patent/CN87208366U/en
Withdrawn legal-status Critical Current

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Abstract

The utility model belongs to a rapid power electronic device. The adopted electrode of an amplifying gate is I-shaped. The layout of the short dots is a square photolithography plate. With the certain matching of the depth and the concentration of diffusion junctions, the technical standards achieve that the break over voltage is 1600 volt, the mean on state current is 200 amperes, and the working frequency is 10KHZ. Simultaneously, the short turn-on time and turn-off time and the high di/dt and dv/dt tolerance are provided. The utility model can be used for power electronic devices such as an intermediate frequency power supply whose working frequency is above 8KHZ, an ultrasonic power supply, a motor speed regulator, an uninterrupted power supply, etc. The utility model is in particular suitable for the network voltage whose voltage is 380 volts in China.

Description

High frequency crystal thyratron
The utility model belongs to electric and electronic technical field, relates to a kind of fast power switching device.
Its service time of the high speed thyristor of present domestic manufacturing and turn-off time are longer, and di/dt and dv/dt tolerance can not be taken into account, and operating frequency is lower, generally is lower than 2.5KHZ, and the occasion all high at di/dt and dv/dt is not competent.The high speed thyristor that can work under high frequency of same current capacity in the world, than the higher T7SH124-054DN of US Westinghouse company, its highest breakover voltage is no more than 1300V as present level, can not adapt to China 380V line voltage, and cost an arm and a leg.
The purpose of this utility model is to provide a kind of operating voltage height, and service time and turn-off time are short, di/dt and dv/dt tolerance height, and the thyristor that can under high frequency, work, it is good to have dynamic characteristic, easily manufactured, the advantage that cost is low.
Technical characterictic of the present utility model is: it is I-shaped that the reticle of thyristor adopts the amplification gate pole, and short dot is a square profile.Resistivity is 50~60 Ω cm, thick 320~330 μ mP of sheet 1District's impurity surface concentration is 2~8 * 10 17Cm -3, N2 district surface impurity concentration is 5~8 * 10 20Cm -3, P 1District's junction depth is 60~70 μ m, and the N2 junction depth is 17~21 μ m.High-frequency thyratron transistor operates mainly under the HF switch state, its switching characteristic must be able to satisfy the condition of quick frequency applications, because operating frequency is higher, turn-on consumption and turn-off power loss are directly proportional with frequency, so its switching loss is main, longer as if current rise time under high frequency situations, expansion rate is slower, then the partial points current density is excessive and generate heat near the gate pole that is caused by the gate pole triggering and conducting, temperature sharply rises, and produces " thermal fatigue " phenomenon, makes the turn-off time long, bear the di/dt ability drop, element cisco unity malfunction even burn.Because the effect of di/dt causes local temperature to raise, even can produce " hot runaway " phenomenon.For solving " thermal fatigue " and " hot runaway " phenomenon, must improve the tolerance that device bears di/dt, improve its conducting district expansion rate and reduce service time, corresponding measure is to improve gate pole-cathode construction, enlarge its initial conducting area, gate pole I-shaped figure (1) is amplified at the employing center.Shorten short base width as far as possible under the condition of withstand voltage and angle lap permission, increase the concentration gradient of short base, promptly improve an expansion, the concentration of two expansions reduce by one and expand junction depth, quicken getting over of charge carrier, dwindle the time of electronics by effective base.One expansion surface concentration is 2~8 * 10 17Cm -3, an expansion junction depth is 60~70 μ m, two expansion surface concentrations are 5~8 * 10 20Cm -3, two expansion junction depth N2 districts are 17~21 μ m.Design short dot, particularly negative electrode (3) are principle near the short dot of gate pole not influence tolerance and not influence expansion rate, promptly guarantee the dv/dt tolerance, and certain di/dt tolerance is arranged again; Adopted the small and dense foursquare short dot (2) that is arranged as.Use fast neutron irradiated in addition, shorten the turn-off time.
Material adopts: N type NTD silicon single crystal P=50~60 Ω cm dislocation-frees,
τP≥100μS、d≥φ40mm、H=0.33±0.01mm,
Sintering aluminium foil, thick 0.03mm, the thick 0.15~0.20mm of negative electrode pad, the two-sided correct grinding φ 35 * 2 of molybdenum garden sheet,
Table top angle: positive angle a 1=25 ° of negative angle a 2=3 °.
High-frequency thyratron transistor breakover voltage of the present utility model can reach 1600V, also can under square wave, work, it can make power equipment simplify, be applicable to the above intermediate frequency power supply of 8KHZ, power electronic equipments such as ultrasonic power, uninterruption power source, electric machine speed regulation, energy-conservation, economize on electricity there are major contribution,, are particularly suitable for China 380V line voltage because its breakover voltage can reach 1600V.
Description of drawings:
Fig. 1 is the silicon chip sectional structure chart.
Fig. 2 is the high-frequency thyratron transistor lithography layout.
(1) amplifies gate pole, (2) short dot, (3) negative electrode.

Claims (1)

1, a kind of thyristor comprises silicon chip, reticle, and the amplification gate pole [1] that it is characterized in that figure on the said reticle is for I-shaped, and short dot [2] is a square profile, and the thickness of said silicon chip is 320~340mm, and its p district surface impurity concentration is 2~8 * 10 17Cm -3, N2 district surface impurity concentration is 5~8 * 10 20Cm -3, P 1District's junction depth is 60~70mm, N 2District's junction depth is 17~21mm.
CN 87208366 1987-05-26 1987-05-26 High frequency crystal thyratron Withdrawn CN87208366U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 87208366 CN87208366U (en) 1987-05-26 1987-05-26 High frequency crystal thyratron

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 87208366 CN87208366U (en) 1987-05-26 1987-05-26 High frequency crystal thyratron

Publications (1)

Publication Number Publication Date
CN87208366U true CN87208366U (en) 1988-08-03

Family

ID=4823647

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 87208366 Withdrawn CN87208366U (en) 1987-05-26 1987-05-26 High frequency crystal thyratron

Country Status (1)

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CN (1) CN87208366U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094333A (en) * 2011-11-03 2013-05-08 杭州汉安半导体有限公司 High-power thyristor
CN103811443A (en) * 2012-11-05 2014-05-21 杭州汉安半导体有限公司 Multi-cell large-power thyristor aluminum spacer structure and thyristor
CN104347686A (en) * 2013-07-30 2015-02-11 安徽省祁门县黄山电器有限责任公司 Thyristor chip with high-current increasing rate
CN104409491A (en) * 2013-08-26 2015-03-11 湖北台基半导体股份有限公司 High-voltage quick-turn-on thyristor and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094333A (en) * 2011-11-03 2013-05-08 杭州汉安半导体有限公司 High-power thyristor
CN103094333B (en) * 2011-11-03 2015-09-16 杭州汉安半导体有限公司 A kind of high-power thyristor
CN103811443A (en) * 2012-11-05 2014-05-21 杭州汉安半导体有限公司 Multi-cell large-power thyristor aluminum spacer structure and thyristor
CN104347686A (en) * 2013-07-30 2015-02-11 安徽省祁门县黄山电器有限责任公司 Thyristor chip with high-current increasing rate
CN104409491A (en) * 2013-08-26 2015-03-11 湖北台基半导体股份有限公司 High-voltage quick-turn-on thyristor and manufacturing method thereof
CN104409491B (en) * 2013-08-26 2017-10-27 湖北台基半导体股份有限公司 High Pressure Fast Open leads to IGCT and its manufacture method

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C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
RN01 Renewal of patent term
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee