CN87208366U - High frequency crystal thyratron - Google Patents
High frequency crystal thyratron Download PDFInfo
- Publication number
- CN87208366U CN87208366U CN 87208366 CN87208366U CN87208366U CN 87208366 U CN87208366 U CN 87208366U CN 87208366 CN87208366 CN 87208366 CN 87208366 U CN87208366 U CN 87208366U CN 87208366 U CN87208366 U CN 87208366U
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- CN
- China
- Prior art keywords
- utility
- power supply
- model
- turn
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000013078 crystal Substances 0.000 title description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
Abstract
The utility model belongs to a rapid power electronic device. The adopted electrode of an amplifying gate is I-shaped. The layout of the short dots is a square photolithography plate. With the certain matching of the depth and the concentration of diffusion junctions, the technical standards achieve that the break over voltage is 1600 volt, the mean on state current is 200 amperes, and the working frequency is 10KHZ. Simultaneously, the short turn-on time and turn-off time and the high di/dt and dv/dt tolerance are provided. The utility model can be used for power electronic devices such as an intermediate frequency power supply whose working frequency is above 8KHZ, an ultrasonic power supply, a motor speed regulator, an uninterrupted power supply, etc. The utility model is in particular suitable for the network voltage whose voltage is 380 volts in China.
Description
The utility model belongs to electric and electronic technical field, relates to a kind of fast power switching device.
Its service time of the high speed thyristor of present domestic manufacturing and turn-off time are longer, and di/dt and dv/dt tolerance can not be taken into account, and operating frequency is lower, generally is lower than 2.5KHZ, and the occasion all high at di/dt and dv/dt is not competent.The high speed thyristor that can work under high frequency of same current capacity in the world, than the higher T7SH124-054DN of US Westinghouse company, its highest breakover voltage is no more than 1300V as present level, can not adapt to China 380V line voltage, and cost an arm and a leg.
The purpose of this utility model is to provide a kind of operating voltage height, and service time and turn-off time are short, di/dt and dv/dt tolerance height, and the thyristor that can under high frequency, work, it is good to have dynamic characteristic, easily manufactured, the advantage that cost is low.
Technical characterictic of the present utility model is: it is I-shaped that the reticle of thyristor adopts the amplification gate pole, and short dot is a square profile.Resistivity is 50～60 Ω cm, thick 320～330 μ mP of sheet
1District's impurity surface concentration is 2～8 * 10
17Cm
-3, N2 district surface impurity concentration is 5～8 * 10
20Cm
-3, P
1District's junction depth is 60～70 μ m, and the N2 junction depth is 17～21 μ m.High-frequency thyratron transistor operates mainly under the HF switch state, its switching characteristic must be able to satisfy the condition of quick frequency applications, because operating frequency is higher, turn-on consumption and turn-off power loss are directly proportional with frequency, so its switching loss is main, longer as if current rise time under high frequency situations, expansion rate is slower, then the partial points current density is excessive and generate heat near the gate pole that is caused by the gate pole triggering and conducting, temperature sharply rises, and produces " thermal fatigue " phenomenon, makes the turn-off time long, bear the di/dt ability drop, element cisco unity malfunction even burn.Because the effect of di/dt causes local temperature to raise, even can produce " hot runaway " phenomenon.For solving " thermal fatigue " and " hot runaway " phenomenon, must improve the tolerance that device bears di/dt, improve its conducting district expansion rate and reduce service time, corresponding measure is to improve gate pole-cathode construction, enlarge its initial conducting area, gate pole I-shaped figure (1) is amplified at the employing center.Shorten short base width as far as possible under the condition of withstand voltage and angle lap permission, increase the concentration gradient of short base, promptly improve an expansion, the concentration of two expansions reduce by one and expand junction depth, quicken getting over of charge carrier, dwindle the time of electronics by effective base.One expansion surface concentration is 2～8 * 10
17Cm
-3, an expansion junction depth is 60～70 μ m, two expansion surface concentrations are 5～8 * 10
20Cm
-3, two expansion junction depth N2 districts are 17～21 μ m.Design short dot, particularly negative electrode (3) are principle near the short dot of gate pole not influence tolerance and not influence expansion rate, promptly guarantee the dv/dt tolerance, and certain di/dt tolerance is arranged again; Adopted the small and dense foursquare short dot (2) that is arranged as.Use fast neutron irradiated in addition, shorten the turn-off time.
Material adopts: N type NTD silicon single crystal P=50～60 Ω cm dislocation-frees,
τP≥100μS、d≥φ40mm、H＝0.33±0.01mm，
Sintering aluminium foil, thick 0.03mm, the thick 0.15～0.20mm of negative electrode pad, the two-sided correct grinding φ 35 * 2 of molybdenum garden sheet,
Table top angle: positive angle a
1=25 ° of negative angle a
2=3 °.
High-frequency thyratron transistor breakover voltage of the present utility model can reach 1600V, also can under square wave, work, it can make power equipment simplify, be applicable to the above intermediate frequency power supply of 8KHZ, power electronic equipments such as ultrasonic power, uninterruption power source, electric machine speed regulation, energy-conservation, economize on electricity there are major contribution,, are particularly suitable for China 380V line voltage because its breakover voltage can reach 1600V.
Description of drawings:
Fig. 1 is the silicon chip sectional structure chart.
Fig. 2 is the high-frequency thyratron transistor lithography layout.
(1) amplifies gate pole, (2) short dot, (3) negative electrode.
Claims (1)
1, a kind of thyristor comprises silicon chip, reticle, and the amplification gate pole [1] that it is characterized in that figure on the said reticle is for I-shaped, and short dot [2] is a square profile, and the thickness of said silicon chip is 320～340mm, and its p district surface impurity concentration is 2～8 * 10
17Cm
-3, N2 district surface impurity concentration is 5～8 * 10
20Cm
-3, P
1District's junction depth is 60～70mm, N
2District's junction depth is 17～21mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87208366 CN87208366U (en) | 1987-05-26 | 1987-05-26 | High frequency crystal thyratron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87208366 CN87208366U (en) | 1987-05-26 | 1987-05-26 | High frequency crystal thyratron |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN87208366U true CN87208366U (en) | 1988-08-03 |
Family
ID=4823647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 87208366 Withdrawn CN87208366U (en) | 1987-05-26 | 1987-05-26 | High frequency crystal thyratron |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN87208366U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094333A (en) * | 2011-11-03 | 2013-05-08 | 杭州汉安半导体有限公司 | High-power thyristor |
| CN103811443A (en) * | 2012-11-05 | 2014-05-21 | 杭州汉安半导体有限公司 | Multi-cell large-power thyristor aluminum spacer structure and thyristor |
| CN104347686A (en) * | 2013-07-30 | 2015-02-11 | 安徽省祁门县黄山电器有限责任公司 | Thyristor chip with high-current increasing rate |
| CN104409491A (en) * | 2013-08-26 | 2015-03-11 | 湖北台基半导体股份有限公司 | High-voltage quick-turn-on thyristor and manufacturing method thereof |
-
1987
- 1987-05-26 CN CN 87208366 patent/CN87208366U/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094333A (en) * | 2011-11-03 | 2013-05-08 | 杭州汉安半导体有限公司 | High-power thyristor |
| CN103094333B (en) * | 2011-11-03 | 2015-09-16 | 杭州汉安半导体有限公司 | A kind of high-power thyristor |
| CN103811443A (en) * | 2012-11-05 | 2014-05-21 | 杭州汉安半导体有限公司 | Multi-cell large-power thyristor aluminum spacer structure and thyristor |
| CN104347686A (en) * | 2013-07-30 | 2015-02-11 | 安徽省祁门县黄山电器有限责任公司 | Thyristor chip with high-current increasing rate |
| CN104409491A (en) * | 2013-08-26 | 2015-03-11 | 湖北台基半导体股份有限公司 | High-voltage quick-turn-on thyristor and manufacturing method thereof |
| CN104409491B (en) * | 2013-08-26 | 2017-10-27 | 湖北台基半导体股份有限公司 | High Pressure Fast Open leads to IGCT and its manufacture method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
| RN01 | Renewal of patent term | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |