CN87103891A - The galvanic corrosion of circular silicon cup - Google Patents
The galvanic corrosion of circular silicon cup Download PDFInfo
- Publication number
- CN87103891A CN87103891A CN87103891.9A CN87103891A CN87103891A CN 87103891 A CN87103891 A CN 87103891A CN 87103891 A CN87103891 A CN 87103891A CN 87103891 A CN87103891 A CN 87103891A
- Authority
- CN
- China
- Prior art keywords
- silicon
- corrosion
- copper electrode
- corrosive fluid
- corrosive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Landscapes
- Weting (AREA)
Abstract
The present invention discloses a kind of electrochemical corrosive process, in order to corrode the circular silicon cup (the silicon elastica of peripheral fixed support) in the semiconductor silicon piezoresistive pressure sensor.The NH that employing is less to the human body toxic
4The F aqueous solution is made electrochemical corrosive liquid; Treat corrosive tool n/n
+The n of the silicon chip of structure
+Use the very easily SiO of growth on the face
2Electing property etching mask, the following rubber ring that covers enough large diameters again are crushed between the copper electrode of the porous copper electrode of negative polarity and straight polarity, and corrosive fluid constantly sprays into the porous copper electrode of negative polarity, throughly treat that corrosion of silicon corrodes.
Description
The invention belongs to electrochemical corrosive process, in order to corrode the garden shape silicon flexible sheet (silicon cup) in the semiconductor silicon piezoresistive pressure sensor.
The semiconductor silicon piezoresistive pressure sensor mostly is the flexible sheet that silicon substrate material is processed into peripheral fixed support in design at present, and the diaphragm of this shape is referred to as silicon cup.The processing of silicon cup is the critical process of producing this class pressure transmitter.Traditional silicon cup complete processing is to adopt the method for mechanical mill, but only is suitable for bigger diaphragm.To hypomegetic pressure transmitter (as using on the biology, the diameter of film is less than 1mm), for guaranteeing its sensitivity, flexible sheet must be very thin, and about about 10 microns, and the uniformity requirement of film is higher, and mechanical mill is powerless.In these years Fa Zhan isotropy and anisotropic etch method have obtained good effect.For the volume that makes this class pressure transmitter is littler, the garden shape silicon cup that should adopt the isotropic etch method to erode away.The present invention relates to the concrete etching process problem of this class mini-garden shape silicon cup.
Article (" Fabrication of Catheter-Tip and Sidewall Miniature Pressure Sensors " people such as Esashi, IEEE-Transactions On Electron Devices, Vol.ED-29, NO.1, Jan.1982, P.57-63) introduced a kind of method in the small garden shape silicon cup of HF aqueous solution electrochemical corrosion, and with this galvanic corrosion schematic representation of apparatus.People such as Esashi adopt mobile 5% rare HF solution to make electrochemical corrosive liquid.Because HF solution is to SiO
2Corrodibility extremely strong, used high-quality Si
3N
4Electing property etching mask (is promptly being treated corrosive silicon face growth one deck Si
3N
4, make the figure for the treatment of corrosive silicon partly by lithography).F under electric field action
-Go to silicon face and silicon effect and generate (SiF
6)
-Enter solution, reach the purpose of corrosion silicon.This corrosion has a specific character, promptly high to doping content n
+The silicon corrosion is fast, and the n type silicon low to doping content corrodes hardly.Like this, treating that the corrosive silicon chip makes n/n
+Structure is promptly at n
+Extension one deck n type silicon when corrosion proceeds to epitaxial film, promptly stops (stopping effect certainly) voluntarily on the substrate.Corrosion results like this, its film thickness can be controlled by the thickness of epitaxial film, can obtain the silicon flexible sheet (silicon cup) of the smooth slick peripheral fixed support of any thickness.This is a kind of good method, but in actual use, also has many technical difficulty:
(1) the used HF aqueous solution is bigger to the toxic of human body; (2) be not easy to make very much the Si that can play good masking action
3N
4Film is to giving fixed etching time, Si
3N
4Film is corroded by HF, and causes mask to destroy; (3) former galvanic corrosion device is made and processed complex, make the non-leakage HF of the advancing solution in the silicon chip back side in rotation very difficult.
Task of the present invention is promptly being avoided and is being overcome above-mentioned difficulty, adopts a kind of new electrochemical corrosive liquid littler than HF to the human body toxic; With the SiO that very easily grows
2Electing property etching mask; In addition former chemical corrosion device is done to simplify and improve, make and treat that corrosion of silicon need not rotate, and to the good seal of corrosive fluid, wherein component also are convenient to processing.
Task of the present invention is finished as follows:
Use NH instead
4The F aqueous solution is made electrochemical corrosive liquid, and it poisons littler than HF to human body; It is to n/n
+What silicon chip had good galvanic corrosion equally stops effect certainly, to n
+The corrosion speed of silicon is quite fast; Particularly importantly under electric field action, it is to SiO
2Almost do not have corrosive nature, so the available very easily SiO of growth
2Electing property etching mask, effect are also fairly good; NH in addition
4The F aqueous solution is also little to the corrodibility of other materials, so the material of electrode and other component also is easy to select in the galvanic corrosion device.
Accompanying drawing 1 be the present invention propose through simplifying and improved galvanic corrosion schematic representation of apparatus.Describe the details and the working condition of this concrete device in detail below in conjunction with accompanying drawing 1:
This device comprises one in order to hold the synthetic glass container (1) of corrosive fluid (11); The agitator (2) of the hollow of a rotation with venetian blind type slotted hole (3); Synthetic glass container (1) bottom connects a U-shaped body (13) securely; U-shaped spare (13) lower central is passed one and is tightened up screw (9), because U-shaped spare (13) lower central has been attacked respective threaded, can move up and down because of turn so tighten up screw; Treat the SiO that performs of corrosion of silicon (6)
2After the one side of selectivity mask covers the following rubber ring (5) of enough large diameters, be sandwiched in and connect to the porous copper electrode (7) of direct supply (10) negative pole and connect between direct supply (10) anodal copper electrode (8); Certainly the internal diameter of rubber ring (5) must be less than the external diameter for the treatment of corrosion of silicon (6) down, the distance between its thickness effect porous copper electrode (7) and the copper electrode (8), influence strength of electric field size therebetween; With tighten up screw (9) copper electrode (8), treat corrosion of silicon (6), down rubber sheet circle (5), porous copper electrode (7) and last rubber ring (4) are pressed to the garden shape opening (12) bottom the synthetic glass container (1), carry out the sealing to corrosive fluid (11); The diameter ratio of garden shape opening (12) treats that corrosive silicon chip (6) diameter is slightly little; The equal diameters of the internal diameter of last rubber ring and garden shape opening (12); The continuous rotation of agitator (2) with hollow of venetian blind type slotted hole (3) makes corrosive fluid (11) constantly spray from agitator (2) bottom of hollow and is subjected to continuously stirring; From the corrosive fluid (11) of agitator (2) bottom ejection, break through that porous copper electrode (7) is through to be treated on the corrosive silicon chip (6), constantly pour and constantly exchange for, remove the bubble that reaction generates simultaneously, avoid hindering further corrosion; For making the electric field between porous copper electrode (7) and the copper electrode (8) even, the hole on the porous copper electrode (7) is small and dense, and is evenly distributed; Copper electroplax (8) is thick slightly, do not tighten and be out of shape because of tightening up screw (9), so that crushing treats corrosion of silicon (6), requires copper electroplax (8) simultaneously and treats that the face that corrosion of silicon (6) contacts is smooth smooth; Tighten up screw (9) when tightening, as long as reach the unlikely degree that spills of corrosive fluid (11); The milliampere meter (14) that is connected with direct supply (10) is in order to monitor the process of galvanic corrosion.
The present invention compared with prior art has following advantage:
(1) uses the NH littler than HF to the human body toxic instead4The F aqueous solution is made electrochemical corrosive liquid (11).
(2) the available very easily SiO of growth2The high-quality Si that the film replacement is difficult to grow3N
4Electing property of film etching mask.
(3) NH
4The F aqueous solution is little to other corrodibility of parts such as electrodes in the galvanic corrosion device.
(4) whole galvanic corrosion device is simple and be easy to processing and fabricating, and material therefor is common, inexpensive.
(5) in galvanic corrosion device of the present invention, with treat corrosion of silicon (6) itself as main to spurting into the sealing and the spacer of corrosive fluid (11).A face treating corrosion of silicon (6) is corroded, another face is crevice corrosion liquid (11) not, unaffected so corrode after can performing other technologies of erosional surface (front) not, reduced other additional process of doing electrode etc. in addition again, shortened process cycle.
(6) as whole galvanic corrosion device is enlarged, do several electrodes more and take some addition thereto, once just can corrode multi-disc simultaneously, be convenient to fairly large production.
(7) this galvanic corrosion device is safe and reliable, and it is easy to operate to change sheet, also is convenient to observe, and as finding the phenomenon of leakage is arranged, and with regard to no power, stops corrosion, corrodes after installing again, and can not cause full wafer to scrap.
(8) used the characteristics that stir while spraying of agitator (2), made each position uniformity of the silicon cup that erodes away, the garden degree is also good, is suitable for making this class mini-silicon cup.
Adopt the galvanic corrosion device of accompanying drawing 1, corrosive fluid (11) adopts the NH of 5～6 weight percents
4The F aqueous solution, strength of electric field are about 75V/cm, and about 300～400 rev/mins of the rotating speed of agitator (2) can reach the corrosion speed of 8～10 μ m/min, can obtain best effects less than 1mm, thickness less than the silicon cup of 16 μ m to the diameter of making film.
Claims (3)
1, the galvanic corrosion of garden shape silicon cup in a kind of semiconductor silicon piezoresistive pressure sensor is adopted fluorine-containing corrosive fluid [11], at n
+Extension one deck n type layer on the substrate, and at n
+What perform the selectivity mask pattern on the face treats between corrosion of silicon [6] and the corrosive fluid [11] continuous relative movement is arranged, and is issued to corrosion n in the extra electric field effect
+Purpose, it is characterized in that corrosive fluid [11] adopts NH
4The F aqueous solution; Use SiO
2Electing property etching mask; Treat the SiO that performs of corrosion of silicon [6]
2After the one side of selective corrosion mask covers the following rubber ring [5] of enough large diameters, be sandwiched in and connect to the porous copper electrode [7] of direct power supply [10] negative pole and connect between direct supply [10] anodal copper electrode [8]; Corrosive fluid [11] is constantly spurted into porous copper electrode [7], goes directly and treats that corrosion of silicon [6] corrodes.
2,, it is characterized in that corrosive fluid (11) leaves in the synthetic glass container (1) according to the galvanic corrosion of the described garden of claim 1 shape silicon cup; The continuous rotation of agitator (2) with hollow of venetian blind type slotted hole (3) makes corrosive fluid (11) constantly spray from agitator (2) bottom of hollow and is subjected to continuously stirring; The bottom of synthetic glass container (1) firmly connects a U-shaped spare (13); By last rubber ring (4), tighten up screw (9) with what pass U-shaped spare (13), copper electrode (8), treat corrosion of silicon (6), rubber ring (5) and porous copper electrode (7) the four garden shape opening (12) of pressing to synthetic glass container (1) bottom carries out the sealing to corrosive fluid (11) down.
3,, it is characterized in that corrosive fluid (11) adopts the NH of 5～6 weight percents according to the galvanic corrosion of claim 1 or 2 described garden shape silicon cups
4The F aqueous solution; Strength of electric field is 75V/cm; About 300～400 rev/mins of agitator (2) rotating speed can reach 8～10 μ m/min corrosion speeds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87103891 CN1009376B (en) | 1987-05-27 | 1987-05-27 | Electro-chemical corrosion of circular silicon cup |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87103891 CN1009376B (en) | 1987-05-27 | 1987-05-27 | Electro-chemical corrosion of circular silicon cup |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN87103891A true CN87103891A (en) | 1988-03-30 |
| CN1009376B CN1009376B (en) | 1990-08-29 |
Family
ID=4814620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 87103891 Expired CN1009376B (en) | 1987-05-27 | 1987-05-27 | Electro-chemical corrosion of circular silicon cup |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1009376B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100341119C (en) * | 2004-12-20 | 2007-10-03 | 华中科技大学 | Silicon microbridge corrosion unit for ferroelectric film infrared detector |
| CN101880879A (en) * | 2010-07-14 | 2010-11-10 | 无锡华润华晶微电子有限公司 | Corrosion clamp for silicon cup |
| CN101680106B (en) * | 2007-05-09 | 2012-04-18 | 株式会社昆腾14 | Method for processing silicon base material, article processed by the method, and processing apparatus |
| CN105241587A (en) * | 2015-09-25 | 2016-01-13 | 杭州士兰微电子股份有限公司 | Pressure sensor and manufacturing method thereof |
| CN109632457A (en) * | 2019-02-22 | 2019-04-16 | 西安文理学院 | A kind of device and method being used to prepare electrochemical corrosion test sample |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411794C (en) * | 2006-06-12 | 2008-08-20 | 南京航空航天大学 | Group-pore electrolytic machining method and apparatus |
-
1987
- 1987-05-27 CN CN 87103891 patent/CN1009376B/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100341119C (en) * | 2004-12-20 | 2007-10-03 | 华中科技大学 | Silicon microbridge corrosion unit for ferroelectric film infrared detector |
| CN101680106B (en) * | 2007-05-09 | 2012-04-18 | 株式会社昆腾14 | Method for processing silicon base material, article processed by the method, and processing apparatus |
| CN101880879A (en) * | 2010-07-14 | 2010-11-10 | 无锡华润华晶微电子有限公司 | Corrosion clamp for silicon cup |
| CN105241587A (en) * | 2015-09-25 | 2016-01-13 | 杭州士兰微电子股份有限公司 | Pressure sensor and manufacturing method thereof |
| CN109632457A (en) * | 2019-02-22 | 2019-04-16 | 西安文理学院 | A kind of device and method being used to prepare electrochemical corrosion test sample |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1009376B (en) | 1990-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3311203B2 (en) | Semiconductor device manufacturing method, semiconductor manufacturing apparatus, and chemical mechanical polishing method for semiconductor wafer | |
| US6003527A (en) | Cleaning apparatus and a cleaning method | |
| Baum et al. | AFM study of surface finish improvement by ultrasound in the anisotropic etching of Si in KOH for micromachining applications | |
| US6082373A (en) | Cleaning method | |
| EP1213369A2 (en) | Method and apparatus for etching ruthenium films | |
| CN103985848B (en) | A kind of method of utilization doped silicon particle preparation nano-structure porous silicon | |
| CN110197789B (en) | Ultrasonic-assisted electrochemical mechanical polishing device and method for SiC single crystal wafer | |
| JPS55154582A (en) | Gas plasma etching method | |
| CN87103891A (en) | The galvanic corrosion of circular silicon cup | |
| CN101503817B (en) | Photo-assisted electro chemical etching apparatus | |
| Mehran et al. | Controllable silicon nano-grass formation using a hydrogenation assisted deep reactive ion etching | |
| US4840701A (en) | Etching apparatus and method | |
| JPS6225757B2 (en) | ||
| CN113533469A (en) | Lactate ion sensor based on graphene/polypyrrole and preparation method and application thereof | |
| CN106596654B (en) | Vertical response type gas sensor based on three-dimensional porous graphene extra-thin film and preparation method thereof | |
| JPH0437124A (en) | Plasma processor | |
| CN106672974B (en) | A kind of new method preparing silicon micro-nano hierarchical structure | |
| CN115266882A (en) | Self-powered flexible moisture sensor based on photovoltaic effect, and preparation method and application thereof | |
| CN107188427A (en) | A kind of preparation method of nanoparticle substrate | |
| JPH05198558A (en) | Anodizing device | |
| RU2073932C1 (en) | Device for single-side plate etching | |
| TWI240323B (en) | A precise wafer etching method | |
| CN207764202U (en) | Cutting device for biosensor liquid storage cylinder fluid circuit | |
| He et al. | A novel silicon etching method using vapor of tetramethylammonium hydroxide solution | |
| CN218710953U (en) | Sand feeding device for bare sand of annular electroplating diamond wire saw |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C13 | Decision | ||
| C14 | Grant of patent or utility model | ||
| C19 | Lapse of patent right due to non-payment of the annual fee |