CN85109140A - Carborundum (SiC) diode temperature sensor - Google Patents
Carborundum (SiC) diode temperature sensor Download PDFInfo
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- CN85109140A CN85109140A CN 85109140 CN85109140A CN85109140A CN 85109140 A CN85109140 A CN 85109140A CN 85109140 CN85109140 CN 85109140 CN 85109140 A CN85109140 A CN 85109140A CN 85109140 A CN85109140 A CN 85109140A
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- silicon carbide
- temperature sensor
- junction
- diode temperature
- devitrified glass
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Abstract
A kind of new silicon carbide diode temperature sensor, the characteristic that the monocrystal resistance with PN junction is little, very little to the non-linear effects of transducer.This silicon carbide diode temperature sensor adopts a kind of devitrified glass to seal PN junction, and it is lower to realize sealing temperature, not lesion electrode material and electrode ohm contact performance, and improved the serviceability temperature upper limit, can be used for 0～700 ℃ of thermometric.
Description
The present invention is a kind of silicon carbide diode temperature sensor, can be used for the temperature survey of 0～700 ℃ of scope.
The warm area temperature-measuring element has thermocouple, platinum resistance and thermistor etc. in commonly used.Thermocouple sensitivity is very low, is about 40 μ V/ ℃ as the clever degree of nichrome alumino-nickel couple; The sensitivity of platinum resistance is also lower, and bridge circuit sensitivity is generally below 1mv/ ℃, and volume is bigger; Though thermistor is highly sensitive, be non-linear element.
By " the wide humidity province of alpha-silicon carbide PN junction high linearity thermometry " (People's Daily's on June 30th, 1985) of opening inferior invention such as the people of grade, its carborundum PN junction temperature sensor temperature-measuring range is 0～500 ℃, sensitivity is-2～-3mV/ ℃, non-linear deviation is 0.5%～1%(the 5th grinding wheel factory " BW temperature sensor " specification), though possessed highly sensitive, advantages such as good linearity and volume are little, but its thermometric upper limit is high not enough, can not give full play of this type of temperature sensor excellent thermometric performance in the cards.
It is wideer to the objective of the invention is to make a kind of temperature-measuring range, the silicon carbide diode temperature sensor that particularly the thermometric upper limit is higher.
Accompanying drawing 1 is a structural representation of the present invention, and 1 is P type layer, and 2 is N type layer, and 3 and 4 is tungsten film, 5 and 6 is golden film, and 7 and 8 are the spun gold lead-in wire, and 9 and 10 for going between behind platinum filament or the nickel wire, 11 is the devitrified glass encapsulated layer, and 12 is aluminium oxide diplopore porcelain tube, and 13 is the devitrified glass cementation layer.
Accompanying drawing 2A is the V-T characteristic curve of the silicon carbide diode temperature sensor of volume resistance when big.
Accompanying drawing 2B is the V-T characteristic curve of temperature sensor of the present invention.
Main points of the present invention are the silicon carbide diode temperature sensor, when doing substrate extension N-type layer with P type single-crystal silicon carbide, in extension, nitrogen-atoms is diffused into the substrate of P type from the two sides goes. When doing substrate with the N-type single-crystal silicon carbide, the P type layer thickness of extension is less than 0.1mm. After taking above-mentioned measure, reduce semi-conductive bulk resistor in the PN junction, thereby reduced the thermistor non-linear effects of sensor forward voltage drop. Like this, both be to increase operating current, the pressure drop of raising diode forward, can guarantee that also low-temperature zone is linear good in measurement category, therefore reach the purpose of the range of linearity that improves the thermometric upper limit.
The present invention does electrode material with tungsten, and gold-plated film on tungsten electrode makes lead-in wire and electrode ohmic contact good.
The present invention adopts extraordinary devitrified glass to seal PN junction, and it is low to seal temperature, seals also not lesion electrode material in air, does not damage ohmic contact.In the time of 750 ℃, still have the good performance of sealing.
The composition range of devitrified glass (Wt%) is:
ZnO 25～55 MgO 2～7
B
2O
315～25 BaO 2～7
SiO
28～27 SnO
21～3
Al
2O
33～15 Cr
2O
30～1
The best composition range of devitrified glass (Wt%) is:
ZnO 30～50 MgO 4～5
B
2O
320 BaO 4～5
SiO
210～25 SnO
22～3
Al
2O
35～12 Cr
2O
30～1
Sealing temperature range is 650～800 ℃, and it is 650～750 ℃ that the best is sealed temperature range.Sealing time range is 1～60 minute, and it is 5～40 minutes that the best is sealed time range.Sealing atmosphere is air.
Embodiment:
With P type hexagonal plate single-crystal silicon carbide sheet, after the polishing, be in the vapour epitaxial furnace of heater with graphite, make furnace charge with the industrial carbonization silica sand of green, time-delay passes to pure nitrogen gas and mixes outside, extension one deck N type single-crystal silicon carbide, form the PN junction as P type layer 1 among Fig. 1 and N type layer 2, in this process, nitrogen-atoms is diffused into its inside from the two sides of substrate.The thickness of PN junction single-chip is 0.3～0.4mm.
Formed the single-crystal silicon carbide sheet of PN junction, it is 1～10 μ m tungsten film (3,4) that the two sides evaporation is gone up thick, the two sides evaporation is upward thick again is the golden film (5,6) of 1～2 μ m, through alloying heat treatment, after making plated film firmly, be cut into length and width and all be about 0.7mm, the tube core of the thick 0.3～0.4mm of being, adopt the long spun gold of 2～4mm to make lead-in wire (7,8), this is gone between thermocompression bonding on the golden film (5,6) on tube core two sides.Adopt platinum filament or nickel wire to make back lead-in wire (9,10).Adopt devitrified glass cementation layer (13) that back lead-in wire (9,10) and aluminium oxide diplopore porcelain tube (12) cementation are got up.
With a kind of special microcrystal glass material PN junction is sealed, formed encapsulated layer (11), its typical component (wt%) is:
ZnO 30 MgO 5
B
2O
320 BaO 5
SiO
225 SnO
23
Al
2O
312
Encapsulating process: will be by the above-mentioned glass dust of 300 mesh sieves ethanol furnishing slurry, be coated with and wrap in around the tube core, also wrap same slurry together with lead-in wire spun gold (7,8), after treating that ethanol all volatilizees, placing temperature is the stove of 650～700 ℃ air atmosphere, make and seal glass melting, continue 20～30 minutes, finish and seal.
According to instructions for use, the present invention can use outer protection of pipe.
V-T characteristic curve contrast among Fig. 2 A, the B:
When the curve 1 among Fig. 2 A, curve 2, curve 3, curve 4 represent that respectively the monocrystal resistance of carborundum PN junction is big, the V-T characteristic curve when the forward operating current is respectively 400 μ A, 300 μ A, 200 μ A, 100 μ A, 50 μ A.
More above-mentioned Fig. 2 A, B are as seen, when the working sensor electric current increases to 400 μ A by 50 μ A, because the volume resistance of the transducer monocrystal of Fig. 2 A is big, have a strong impact on the linearity of the low-temperature zone of temperature-measuring range, electric current is big more obvious more, for good linearity, have to use very little operating current, the thermometric upper limit just is difficult to be higher than 500 ℃.And temperature sensor of the present invention, when electric current increased to 400 μ A, the low-temperature zone linearity of temperature-measuring range was also fine.The thermometric upper limit can reach or be higher than 700 ℃ this moment.
Claims (6)
1, a kind of silicon carbide diode temperature sensor, comprise that a carborundum PN junction, tungsten film and golden film do compound film electrode, make lead-in wire with two sections spun golds, platinum filament or nickel wire are made the back lead-in wire, alumina ceramic tube is done back lead wire insulation stator, when it is characterized in that doing substrate extension N type layer, nitrogen-atoms is diffused in the substrate of P type goes with P type single-crystal silicon carbide; When perhaps doing substrate with N type single-crystal silicon carbide, the P type layer thickness of extension is less than 0.1 millimeter; Whole PN junction is sealed with a kind of devitrified glass.
2, according to the described silicon carbide diode temperature sensor of claim 1, it is characterized in that nitrogen atom doping is to use pure nitrogen gas in the P type layer of PN junction, in extension N type layer, diffuse into simultaneously in the substrate of P type by epitaxial surface and another side and to go.
3,, it is characterized in that sealing the used devitrified glass composition range (wt%) of PN junction and be according to the described silicon carbide diode temperature sensor of claim 1:
ZnO 25～55 MgO 2～7
B
2O
315～25 BaO 2～7
SiO
28～27 SnO
21～3
Al
2O
33～15 Cr
2O
30～1
Best composition range (wt%) is:
ZnO 30～50 MgO 4～5
B
2O
320 BaO 4～5
SiO
210～25 SnO
22～3
Al
2O
35～12 Cr
2O
30～1
4, according to the described silicon carbide diode temperature sensor of claim 1, it is characterized in that the temperature range of sealing of devitrified glass is 650～800 ℃, it is 650～750 ℃ that the best is sealed temperature range.
5, according to the described silicon carbide diode temperature sensor of claim 1, it is characterized in that the time range of sealing of devitrified glass is 1～60 minute, the best time of sealing is 5～40 minutes.
6,, it is characterized in that the atmosphere of sealing of devitrified glass is air according to the described silicon carbide diode temperature sensor of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN85109140A CN85109140B (en) | 1985-12-12 | 1985-12-12 | Silicon carbide (sic) diode temp. transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN85109140A CN85109140B (en) | 1985-12-12 | 1985-12-12 | Silicon carbide (sic) diode temp. transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85109140A true CN85109140A (en) | 1987-09-30 |
| CN85109140B CN85109140B (en) | 1988-06-29 |
Family
ID=4796250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN85109140A Expired CN85109140B (en) | 1985-12-12 | 1985-12-12 | Silicon carbide (sic) diode temp. transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN85109140B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356411C (en) * | 2005-05-24 | 2007-12-19 | 崔龙 | Forest and field fireproof alarming and monitoring system |
| CN105698951A (en) * | 2014-11-26 | 2016-06-22 | 核工业北京地质研究院 | Well temperature measuring device based on PN junction |
| CN106872061A (en) * | 2016-12-27 | 2017-06-20 | 中国科学院长春光学精密机械与物理研究所 | A kind of quick response surface mount method of glass packaged thermosensitive resistor device |
| CN108011030A (en) * | 2017-12-27 | 2018-05-08 | 中国科学院上海微系统与信息技术研究所 | A kind of SiC thermocouple types high-temperature heat flux sensor and preparation method thereof |
| CN110133047A (en) * | 2019-05-30 | 2019-08-16 | 京东方科技集团股份有限公司 | The detection method of detection unit, detection device and memebrane protein diffusion rate |
-
1985
- 1985-12-12 CN CN85109140A patent/CN85109140B/en not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356411C (en) * | 2005-05-24 | 2007-12-19 | 崔龙 | Forest and field fireproof alarming and monitoring system |
| CN105698951A (en) * | 2014-11-26 | 2016-06-22 | 核工业北京地质研究院 | Well temperature measuring device based on PN junction |
| CN105698951B (en) * | 2014-11-26 | 2021-01-05 | 核工业北京地质研究院 | Well temperature measuring device based on PN junction |
| CN106872061A (en) * | 2016-12-27 | 2017-06-20 | 中国科学院长春光学精密机械与物理研究所 | A kind of quick response surface mount method of glass packaged thermosensitive resistor device |
| CN106872061B (en) * | 2016-12-27 | 2019-04-23 | 中国科学院长春光学精密机械与物理研究所 | A kind of quick response surface mount method of glass packaged thermosensitive resistor device |
| CN108011030A (en) * | 2017-12-27 | 2018-05-08 | 中国科学院上海微系统与信息技术研究所 | A kind of SiC thermocouple types high-temperature heat flux sensor and preparation method thereof |
| CN108011030B (en) * | 2017-12-27 | 2019-12-17 | 中国科学院上海微系统与信息技术研究所 | SiC thermopile type high-temperature heat flow sensor and preparation method thereof |
| CN110133047A (en) * | 2019-05-30 | 2019-08-16 | 京东方科技集团股份有限公司 | The detection method of detection unit, detection device and memebrane protein diffusion rate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN85109140B (en) | 1988-06-29 |
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