CN85107593A - The metal charge surface forms the method and apparatus of alloy layer - Google Patents
The metal charge surface forms the method and apparatus of alloy layer Download PDFInfo
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- CN85107593A CN85107593A CN85107593.2A CN85107593A CN85107593A CN 85107593 A CN85107593 A CN 85107593A CN 85107593 A CN85107593 A CN 85107593A CN 85107593 A CN85107593 A CN 85107593A
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Abstract
A kind of method and apparatus that forms metal level by the heating and gasifying of metallic compound at metal material surface, be placed on the cathode disc in the vacuum reaction chamber by the metallic cementation material, simultaneously in vacuum reaction chamber or outside also be placed with the metallic compound vaporizer, vaporizer is heated by low-voltage power supply.Metallic compound gasifies by heating under vacuum condition, the ionization and carry out glow discharge under added dc high-voltage field action between negative electrode and the anode of gasified metal compound, the bombardment of positive ion metal is positioned at the metallic substance on the cathode disc under glow discharge, makes its surface form alloy layer.
Description
The present invention relates to a kind of method and apparatus, particularly relate to a kind of method and apparatus that forms alloy layer by the metallic compound heating and gasifying at metal material surface at metal material surface formation alloy layer.
The metal parts surface forms metallic compound layer method (claiming metallic cementation again) and obtains new development in recent years, and this is because for example, the titanium metal compound upper layer makes metal parts have high surface hardness, good wear resistance and erosion resistance.Ooze brill and then can improve iron and steel, the oxidation-resistance of superalloys such as nickel stem, molybdenum stem, niobium stem can also improve the solidity to corrosion in sulfur-containing medium.Forming the metallic compound method on the metal parts surface occurs much in recent years, chemical vapor deposition method (PVD method) is exactly one of them, though this method has a little metallic cementation effect, but it is main still at metal parts surface formation settled layer rather than infiltration layer, so be not the problem of same category, so here carefully do not state.1978, the Soviet Union was with gasification process such as titanium tetrachlorides and be incubated under 1000 ℃ of temperature, thereby had obtained titanium diffusion layer (N.A.KU/yba, A.T.Reva Steel USSR Mar 1978,8(3) 170～171) at iron and surface of low-carbon steel.Poland adopted gaseous discharge method to obtain titanium diffusion layer (T.Karpincki in 1979, T.Wierzchon, J.Bogacki, " international thermo-chemical treatment " 2 (1950), 90 pages), did introduction, (seeing the 3rd international Metallic Materials and Heat Treatment conference collection of thesis) in the 3rd the international Metallic Materials and Heat Treatment conference that this method was once held in Shanghai in nineteen eighty-three.The aforesaid method shortcoming is: the gasified metal compound gas that is adopted is gas mixture; What form in the metallic surface mainly also is not titanium alloy layer but titanium carbide layer.As for aluminising then in a large number in industrial application, it is 680 °～760 ℃ that iron and steel enterprise mainly adopts the hot dipping method temperature of aluminum liquid, and mechanical industry mostly adopts solid powder method, oozing the brill agent is that ferroaluminium adds ammonium chloride and chlorination aluminium powder, the aluminising temperature is 900 °-1000 ℃, and these all are well-known.Development has improved solid process (the red machine works that defends again at present, " thermal treatment experience compilation " 601 institutes of six machine portions, in August, 1976,220 pages), and gas phase calorizing (G.V.SamSonov, etc " Met Sci Heat Treat " Mar-Apr, 1978,20(3-4) 338-340).Above-mentioned aluminizing method shortcoming is: aluminising temperature drift (＞700 ℃); What the metal parts surface formed is to contain the high complex compound of aluminium, and tissue is a mixture; This method mainly is applicable to the aluminising of steel-iron components.
Nearly two, propose a kind of cryogenic gas discharge metal cementation in 3 years again and (see the 4th the heat treatment technics experience exchangement meeting in North China paper, " cryogenic gas is put sulfurizing, titanium, aluminium " 1982,7,) this method is to utilize metallic compound heating direct gasification to carry out metallic cementation, the metallic compound heating and gasifying, chemical compound gas ionization under electric field action then, thereby workpiece surface is carried out metallic cementation, though this method develops to some extent than aforementioned approaches method, obtain satisfied effect, but part also comes with some shortcomings, main is that this method is the non-luminous discharge method, that is to say that chemical compound gas is to carry out ionized (the electric field electric current is the 1-500 milliampere) under the very little electric field action of the not high electric current of voltage.
Method of the present invention is the improvement and the development of above-mentioned gas electric discharge, one of purpose of the present invention just provides a kind of method of metallic substance and workpiece being carried out metallic cementation by metallic compound heating direct gasification, this method overcomes the shortcoming of above-mentioned Te Gefa, and its metallic cementation quality is better than above-mentioned each method greatly, temperature is hanged down several Baidu, the infiltration layer composition is single evenly, and depth of penetration is dark.Another object of the present invention provides a kind of for realizing the metallic cementation equipment of the inventive method.
The key of gas metal cementation is to generate a kind of gas of metallic compound.This law takes the metallic compound direct heating to generate gas.Metallic compound is solid or liquid under atmospheric pressure generally, and boiling point is lower, and under subatmospheric, its boiling point greatly reduces, especially metal halide.Therefore, when metallic compound is placed vacuum oven, (1-10 under low pressure
-2Holder) left and right sides heating and gasifying applies high-voltage dc then, makes metal compound gas ionization, and the metal ion of positively charged is by the heated at high speed bombarding cathode, so place metallic substance or workpiece on the cathode disc just to realize metallic cementation.The inventive method is characterised in that metal compound gas carries out brilliant light discharge under the high voltage electric field action, and this moment, voltage of electric field was the 300-1500 volt, owing to carry out glow discharge, so metallic cementation speeds up, the metal infiltration layer is deepened.In addition, owing to carry out glow discharge, thereby rely on ion bombardment effects, just can heating of metal material or workpiece, its temperature is risen, generally can be by regulating the Heating temperature that voltage of electric field is regulated workpiece, and not as non-luminous discharge, can only heat by rare gas element.Moreover owing to adopt glow discharge, metallic compound can be placed on that elsewhere gasifies by adding the low heat effect that adds power supply in the vacuum oven, even can also be placed on the external enforcement heating and gasifying of vacuum oven.
Now in conjunction with the accompanying drawings, the present invention will be described in more detail by embodiment.
Fig. 1 is the synoptic diagram of gas metallic cementation method equipment used.
Embodiment 1.On metallic substance, form the surfaces of aluminum alloy layer.To be oozed material (3) and be placed on the cathode disc (4) in the vacuum oven internal reaction chamber (1), being oozed material is GH220 nickel stem alloy, and the temperature of material (3) is measured and controlled by thermopair (5) and temperature measuring gauge (15).Metallic compound Alcl
3Place vaporizer (7), the temperature of vaporizer (7) is measured and is controlled by thermopair (8) and temperature measuring gauge (9), and the heating of vaporizer (7) is realized by the energy that low-voltage power supply (10) provides.Vaporizer is positioned at outside the reaction chamber (1) among the figure, also is feasible but be arranged in reaction chamber (1).
Gas metallic cementation step is as follows: start vacuum pump (20), reaction chamber (1) is evacuated, and connects low-voltage power supply (20) simultaneously evaporator temperature is risen, when vacuum tightness reaches 10
-2During the holder left and right sides, in reaction chamber (1), feed rare gas element, for example Ar, N
2Deng, make that vacuum tightness reaches 10 in the reaction chamber
-1About holder.Connecting this moment and being added in the reaction chamber (1) high-voltage power supply (16) (0-1500 volt) on the negative electrode (4) and anode (2) is that 500-600 lies prostrate with voltage control wherein at voltage, progressively stops and carrying out glow discharge so beat arc in the reaction chamber.When glow discharge with the Alcl of heating evaporation
3Gas feeds in the reaction chamber (1), continues to vacuumize, and uses Alcl
3Replace rare gas element, and vacuum tightness is 10 in the maintenance reaction chamber (1)
-1Holder, Alcl as a result
3All replace rare gas element and ionization, the bombardment of positive ion metallic aluminium is opposite to the GH220 material on the cathode disc (4), its temperature is risen, 600 ℃ of left and right sides Al positive ions and GH220 material production physics with reaction chemistry, so the formed upper layer of formation aluminising upper layer is AlNi, AlNi
3And NiAl
3Alloy layer.
Also can form Fe with above-mentioned same procedure at steel material surface
3Al, Fe
2Al
5And FeAl
3Deng alloy layer, form MOAl, MOAl at molybdenum and molybdenum group alloy material surface
4And MOAl
12Deng alloy layer; Form Cu at copper and copper-based alloy material surface
3Al
4, CuAl and CuAl
2Deng alloy layer; Form Nb at niobium and niobium sill surface
3Alloy layer such as Al, NbAl.
Embodiment 2: form the titanium alloy surface layer on metallic substance.
Equipment used and metallic cementation process are identical with embodiment's 1, and just working gas is Ticl under the present embodiment situation
4The gas of metallic compound.Can form Fe at steel material surface according to the present embodiment method
2Alloy layer such as Fi, FeTi; Form Ni at nickel and nickel-bass alloy material surface
3Ti, NiTi
2Deng alloy layer; Molybdenum and molybdenum group alloy material surface form the MoTi solid solution layer; Form Cu at copper and copper-based alloy material surface
4Ti, Cu
3Ti, CuTi
2Deng alloy layer.
Embodiment 3: form zinc alloy layer at metal material surface
Equipment used and metallic cementation process are identical with embodiment's 1, and just working gas is ZnCl under the present embodiment situation
2The gas of metallic compound.According to the present embodiment method, can on the surface of the multiple metallic substance that last two embodiment are exemplified, form zinc alloy layer.
Other embodiment:
Equipment used and metallic cementation process be identical with embodiment 1 still.If working gas changes SnCl into
4Gas then can form Fe on steel material surface
3Sn
2, FeSn and FeSn
2Deng alloy layer; On niobium and niobium-base alloy material surface, form Nb
3Sn, NbSn
5And NbSn
2Deng alloy layer.If working gas is NiCl
2, then can form Ni at tungsten and tungsten alloy material surface
4Wi forms FeNi at steel material surface and holds the body layer admittedly; Form Ni at titanium and titanium-based alloy material surface
3Ti NiTi.If working gas is CrCl
4, then can form CrFe, CrMo, CrTi, and solid solution layer such as CrNi at metal material surface.Working gas is MoCl
5, then form MoNi, MoNi at metal material surface
3MoNi
4And MoTi Fe
7Mo
6, solid solution layer such as FeMo.Working gas is WCl
5The time, then form W at metal material surface
6Fe
7, WFe
2, Ni
4Alloy layers such as W.Working gas is NbCl
5The time, then form Fe at metal material surface
2Nb, Fe
21Nb
19, Fe
2Nb
3, NiNb, NiNb
3, Nb
3Sn, Nb
6Sn
5And NbSn
2Deng alloy layer.When working gas is VCb
5The time, can form solid solution layers such as FeV, TiV at metal material surface.Working gas is CuCl
5The time, then can form Cu at metal material surface
4Ti, Cu
2Ti, Cu
3Ti
2, CuTi, CuTi
2, solid solution layers such as CuFe, CuNi.
The metallic cementation equipment of being introduced in the foregoing description is the main part of this equipment, can normally turn round in order to make this equipment, and vacuum reaction chamber adopts impregnating material to make, for example, and stainless steel, aluminising or ooze the surfacing etc. of titanium.In addition, this equipment also is equipped with some devices commonly used, as, the under meter (23) of the pressure warning unit of control pressure (14) dominant discharge, some valves (12,13,17,19,22), catalytic converter (21), deposition reactant cold-trap (18) gas cylinder (24), viewing window (6), quartzy glass bottle (11) etc.These it will be apparent to one skilled in the art that it all is known.
The advantage of taking a broad view of the invention described above method and apparatus is as follows: (1) is because the method that adopts the direct heating and gasifying of metallic compound then to carry out glow discharge under high voltage electric field, accelerated the speed of metallic cementation, can under than the condition of the low several Baidu of additive method, form the metallic cementation layer, and formed surperficial infiltration layer homogeneous, depth of penetration is dark.
(2) metal ion of glow discharge bombardment metal material or surface of the work can heat its surface.
(3) because metallic compound can be placed in the evaporimeter and heat, like this, heating and temperature control just is more prone to, more accurate, the position of evaporimeter can be processed flexibly in addition, namely can be placed in the reative cell, can be placed on outside the reative cell again.
(4) the present invention can pass through the conditioned reaction chamber pressure, working gas concentration, and the temperature of metallic substance or workpiece, current/voltage waits and obtains different phase structures and surface alloy layer depth between the time of metallic cementation and the anode and cathode.
(5) the inventive method has wide range of applications, and can be applied in and form the alloy surface layer on many metallic substance.
Claims (10)
1, a kind of method that forms alloy layer by the heating and gasifying of metallic compound at metal material surface, this method is made up of the following step: will be placed on the cathode disc in the vacuum oven internal reaction chamber by the metallic cementation material, simultaneously also be placed with metallic compound in vacuum oven, (vacuum tightness is 1～10 to metallic compound under vacuum oven vacuumizes situation
-2Holder) heats and reach boiling point and gasify, the metallic compound of gasification is full of in the reaction chamber, between negative electrode and anode, apply an electric field this moment, metal compound gas ionization under electric field action, positive ion metal bombardment be positioned on the cathode disc by the metallic cementation material, thereby make its surface form alloy layer, the method is characterized in that, the gasification of metallic compound direct heating, the ionization and produce glow discharge under the dc high-voltage field action of gasified metal compound is carried out metallic cementation to metallic substance under the glow discharge condition.
According to the method in the claim 1, it is characterized in that 2, the voltage of the high-voltage electric field during glow discharge is the 300-1500 volt.
According to the method in claim 1 or 2, it is characterized in that 3, the gasified metal compound is to enter in the vacuum oven internal reaction chamber to replace rare gas element and carry out glow discharge after rare gas element carries out aura.
According to the method in claim 1 or 3, it is characterized in that 4, metallic compound is a metal halide.
According to the method in claim 1 or 4, it is characterized in that 5, the heating of metallic compound is undertaken by a low-voltage power supply.
6,, it is characterized in that the heating and gasifying of metallic compound carries out outside cathode disc according to the method in claim 1 or 5.
Thereby 7, a kind ofly metal material surface is carried out the gas metallic cementation make its surface form the equipment of alloy layer, this equipment is characterised in that it is made up of following part: a vacuum reaction chamber; Be in cathode disc and anode in this vacuum reaction chamber, just be arranged on this cathode disc by the metallic cementation material; The vaporizer of one splendid attire metallic compound.
8,, it is characterized in that vaporizer is positioned at cathode disc place in addition according to the equipment in the claim 7.
9,, it is characterized in that vacuum chamber made by anticorrosive according to the equipment in the claim 7.
According to the equipment in the claim 9, it is characterized in that 10, the used impregnating material of vacuum chamber is a stainless steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85107593 CN1013689B (en) | 1985-10-15 | 1985-10-15 | Method and apparatus for forming alloy layer on metal surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85107593 CN1013689B (en) | 1985-10-15 | 1985-10-15 | Method and apparatus for forming alloy layer on metal surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85107593A true CN85107593A (en) | 1987-06-10 |
| CN1013689B CN1013689B (en) | 1991-08-28 |
Family
ID=4795687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 85107593 Expired CN1013689B (en) | 1985-10-15 | 1985-10-15 | Method and apparatus for forming alloy layer on metal surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1013689B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1058301C (en) * | 1995-06-08 | 2000-11-08 | 大连海事大学 | Ion-sputtering metallic cementation technology |
| CN104428438A (en) * | 2012-07-03 | 2015-03-18 | 斯奈克玛 | Method and tool for the vapour phase deposition of a metal coating onto parts made of superalloys |
-
1985
- 1985-10-15 CN CN 85107593 patent/CN1013689B/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1058301C (en) * | 1995-06-08 | 2000-11-08 | 大连海事大学 | Ion-sputtering metallic cementation technology |
| CN104428438A (en) * | 2012-07-03 | 2015-03-18 | 斯奈克玛 | Method and tool for the vapour phase deposition of a metal coating onto parts made of superalloys |
| CN104428438B (en) * | 2012-07-03 | 2018-01-02 | 斯奈克玛 | Made of superalloy on part vapor deposition metal coating Method and kit for |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1013689B (en) | 1991-08-28 |
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