CN85101043A - Single-crystal growing apparatus (equipment) - Google Patents
Single-crystal growing apparatus (equipment) Download PDFInfo
- Publication number
- CN85101043A CN85101043A CN85101043.1A CN85101043A CN85101043A CN 85101043 A CN85101043 A CN 85101043A CN 85101043 A CN85101043 A CN 85101043A CN 85101043 A CN85101043 A CN 85101043A
- Authority
- CN
- China
- Prior art keywords
- well heater
- garden
- growing apparatus
- crystal growing
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
In order to increase single crystal growth rate, the necessary thermograde that increases the solid single intracrystalline of a solid liquid interface (
).Because pulling single crystal always is subjected to the radiant heat from well heater, so preferably will reduce the temperature of well heater.However, when the temperature of well heater has here reduced, just have a problem, promptly molten liquid surface is easy to solidify with the position that the crucible inwall is connected at liquid.In order to overcome the problems referred to above, heater design becomes to make the top of melt liquid to be heated to the temperature height than melt liquid bottom.
Description
What the present invention relates to is single-crystal growing apparatus.Comprise the crucible of placing aqueous fusion crystalline material.The heating unit of melt liquid and from the melt liquid material the device of pulling single crystal, this device is suitable for the clavate monocrystalline of growing most.
Usually, caochralski crystal growth (mound method) has been used and has lifted or growing silicon single crystal.Figure 13 shows Czoncharlski method.In the accompanying drawings, the liquid melting material is placed in the quartz crucible 2 and is contained in the plumbago crucible 1, is heated by well heater 4, and it is installed with around crucible 1.Garden clavate monocrystalline 6 begins from upwards growth of liquid 3 from seed crystal 5, and seed crystal is lifted by anchor clamps 7.In the process that upwards lifts, crucible 1 and 2 and monocrystalline 6 with a changeless speed by opposite direction rotation between mutually, they are driven by axle 8 or anchor clamps 7 respectively.In addition, crucible 1 can be lifted by axle 8, so that well heater 4 can be remained on give selected earlier and liquid 3 surperficial corresponding positions.
In the method for this mound, the maximum rate Vmax of single crystal growing.Can be expressed as follows: supposition is smooth and does not exist under the prerequisite of thermograde along the radial direction of monocrystalline 6 at the solid-liquid interface of 3 of monocrystalline 6 and liquid.
Vamx＝ (k)/(HP) （ (dT)/(dx) ）
Here k represents the thermal conductance of monocrystalline 6, and h represents solution heat, and ρ represents density, and (dT)/(dx) is illustrated in the thermograde in solid-liquid interface place monocrystalline 6 solid phases.Herein, x represents the vertical coordinate along monocrystalline 6.In following formula, because k, h and ρ depend on the institute of material inherent character own, therefore in order to obtain big growth velocity Vmax.Essential increase (dT)/(dx).In above-mentioned Czoncharlski method.However radiant heat from the inwall of liquid 3 surfaces and crucible 2 and heating source 4 heats because the single crystal 6 that lifts is subjected to.Above-mentioned value ((dT)/(dx)) will descend inevitably, so in fact the growth velocity of monocrystalline is quite little.
Usually, above-mentioned growth velocity can increase it by the temperature that reduces well heater 4.However, represented according to Figure 10 A and 10B, because the temperature on close liquid 3 surfaces is to be lower comparatively speaking for the middle portion of liquid.If reduce the temperature of well heater 4, liquid 3 will solidify in the position of 3a so.Because be adjacent to crucible 2 on the surface of this position liquid 3.The result has produced defective, so that pulling single crystal 6 continuously.Therefore, at the single-crystal growing apparatus that adopts as shown in figure 13.Its accessible growth velocity is about 1 mm/min at most.In addition, thermograde is T in Figure 10 A, 11A and 12A
1＜T
2＜T
3, and temperature T
2 
T
4, T
3 
T
5(translator thinks it should is T
1 
T
5).
Being relevant to this bright prior art file is Japanese Patent No. 51-47153 and 58-1080.Particularly the latter has disclosed a kind of device, is provided with radiation screen so that the growth of monocrystalline can be carried out with the growth velocity of 2 mm/min above fusion monocrystalline liquid.
Consider these problems, so it is a principal object of the present invention to provide a kind of like this single-crystal growing apparatus, it can get rid of above-mentioned shortcoming at single-crystal growing apparatus.
Comprise the crucible of placing molten mass material liquid according to single-crystal growing apparatus of the present invention, the device of heating liquid and from the device of fluid surface pulling single crystal.Wherein particularly heating unit is designed to following mode: that crucible part at the close crucible of fluid surface will be heated to more higher than the other parts temperature of crucible.
In according to single-crystal growing apparatus of the present invention.Because well heater is like this design: promptly at fluid surface near that crucible local heating of crucible to for the other parts of crucible, exceeding a certain amount of heat.Be confirmed as when low when heater temperature like this, still may stop liquid to be unlikely fluid surface partly solidified near crucible.So and common device compares, it can be at growing single-crystal under the two-forty.And do not produce defective crystal, and can not make the monocrystalline quantitative change bad.
Fig. 1 is the cross section view according to single-crystal growing apparatus of the present invention;
Fig. 2 is the enlarged perspective of well heater.Be used for single-crystal growing apparatus shown in Figure 1;
Fig. 3 is the relation between stratified defect concentration and oxygen concn in the monocrystalline of having grown.Represent with graphics;
Fig. 4 to 6 is cross section views of the various remodeling of the heating source used according to single-crystal growing apparatus of the present invention;
Fig. 7 is a kind of remodeling plan view of the well heater used according to single-crystal growing apparatus of the present invention;
Fig. 8 and Fig. 9 are the cross section views according to the concrete device of other kind of single-crystal growing apparatus of the present invention;
Figure 10 A is the representative temperature distribution plan that the fusion monocrystalline liquid of prior-art devices adopts isothermal curve;
Figure 10 B is the graphic representation of the fusion monocrystalline liquid of prior-art devices along its central axis direction temperature distribution;
Figure 11 A is the temperature distribution exemplary view that adopts isothermal curve to represent according to fusion monocrystalline liquid of the present invention;
Figure 11 B is according to the graphic representation of fusion monocrystalline liquid of the present invention along the temperature distribution of its central axis direction;
Figure 12 A is according to a kind of remodeling of the present invention, has added a magnetic field therein, the typical figure of the temperature distribution of gained fusion monocrystalline liquid when adopting isothermal curve to represent;
Figure 12 B is that remodeling of the present invention has wherein added a magnetic field, and its fusion monocrystalline liquid is along the graphic representation of the temperature distribution of central axis direction;
Figure 13 is the cross section view that adopts the prior art single-crystal growing apparatus of Czoncharlski method.
The Action Specification of concrete device:
Referring to accompanying drawing,, will translate carefully below and describe according to first kind of concrete device of single-crystal growing apparatus of the present invention.Identical or similar part in addition of as shown in Figure 13 those or parts also adopt identical reference digital here.The function of the part in addition that those are omitted is optional here.
In Fig. 1, be similar to prior art single-crystal growing apparatus shown in Figure 13.In single-crystal growing apparatus of the present invention, the liquid 3 of molten silicon is to be placed in the quartz crucible 2, and is placed in the plumbago crucible 1.Graphite heater 4 and plate washer (add thermal isolation use) 9 settled around crucible 1 respectively.In addition, a plurality of cooling bell jar 10a, 10b and 10c are settling around heat insulation plate washer 9 again.Viewing window 12 is housed, so that observe the state of pulling single crystal 6 on cooling cowl 10b.On the chassis of cooling cowl 10a pump-line 13 is housed, so that excluding air, and rare gas element is fed bell jar 10a, 10b and the 10c from the top.In the bottom of crucible 1 axle 8 is installed, can passes the hole 10d on the cooling bell jar 10a chassis loosely, so that make crucible 1 rotate and to promote or to descend.The bottom of well heater 4 is fixed on the annular plate 14.A pair of axostylus axostyle 15 is installed in the bottom of this annular plate 14, and they can pass two hole 10e and 10F on the chassis of cooling cowl 10a loosely, so that can promote or descend well heater 4.Name above fusion monocrystalline 3 liquid, is equipped with the hot buried body 16 of the garden tubular of molybdenum system on the one hand, and its internal diameter is more bigger a little than the external diameter of pulling single crystal 6.Above hot buried body 16, seed crystal 5 is held by anchor clamps 7, and these anchor clamps 7 are connected the lower end that lifts axle 17, just can grow the monocrystalline 6 of clavate like this on the basis of this seed crystal 5.
Fig. 2 indicates the structure of well heater 4.Well heater 4 is a kind of electro-conductive materials, graphite for example, and it makes the garden tubular, does tapered as 4a at an upper portion thereof.Well heater 4 is formed in top and has many groove 4b, and have many groove 4c in the bottom, more than both all along the extending axially of garden tubular heating member 4, and both are according to the angle of certain rule separately, are alternately arranging along the garden Zhou Fangxiang of well heater 4.In addition, the upper end of lower channel 4c is branched into two short and small groove 4d and 4e, and they have the pitch angle for groove 4c be 45 °.Electric current produces heat based on ohmic loss thus by each part that is limited by last groove 4b and lower groove 4c.
For growing single-crystal 6 uses the such design of single-crystal growing apparatus and lifts from fused silicon materials liquid 3 by means of seed crystal 5.Two crucibles 1 and 2 for example are rotated in a clockwise direction by axle 8; The monocrystalline 6 that grows then rotates along counter clockwise direction by axle 17.Perhaps vice-versa.In addition, lifting axle 17 can promote so that pulling single crystal 6 by means of the driving mechanism (not shown) gradually slowly.In addition, two crucibles 1 and 2 are lifted gradually so that the surface of liquid 3 can remain on a pass of giving fixed mutual alignment for well heater 4 fasten.
Device described above has following advantage: because tapered section 4a position is in the top of well heater 4, and also two fork pockets 4d and 4e in sunder in the upper end of lower groove 4c in addition, well heater 4 is in the cross-sectional area of the tapered section 4a other parts less than well heater.Especially the cross-sectional area near branched channels 4d and 4e is littler.So when electric current passed through well heater 4, the tapered section 4a of well heater 4 was heated to a higher temperature (for the other parts of well heater 4).In other words, in liquid 3a part corresponding to well heater tapered section 4a height.At the inwall of this place's fused liquid 3 near crucibles 2, and the temperature head between the maximum value in liquid 3 is little, shown in Figure 11 A and Figure 11 B, with respect to general situation, shown in Figure 10 A and Figure 11 B.
Herein, because tapered section 4a has constituted the part of well heater 4.The impedance of well heater 4 is than the resistance height of common heater, raises (when its current value is identical with current value in the common heater) with the temperature that causes well heater 4.Therefore, in this concrete device, flow through that the electric current of this well heater 4 is determined to come out less than the electric current in the common heater.
In passing, as mentioned above, the temperature in the solid phase monocrystalline 6 on the solid-liquid interface of increase ((dT)/(dx)) is necessary.So that improve maximum growth rate Vmax.In other words, because the monocrystalline that lifts accept to heat from the radiant heat of well heater 4.So preferably will reduce the temperature of well heater.
In according to device of the present invention, be that the temperature of well heater 4 descends so that increase the situation of thermograde ((dT)/(dx)).Because temperature head is little between the above-mentioned maximum value in 3a part and liquid 3.Therefore stop 3a liquid partly solidify be possible and on the surface of 3a place liquid 3 near the inwall of crucible 2.In other words, can reduce some amount to the temperature of well heater 4, so that can reduce the purpose that increases thermograde ((dT)/(dx)) to reach from the radiant heat of well heater 4.The possibility of result increase significantly growth velocity so far 0.2 mm/min (translator thinks it is 2 mm/min) for example compare with common well heater.In addition, growing single-crystal 4 continuously.So just can increase productivity and reduce the cost of making monocrystalline 6.
Fig. 3 is the stratified density of defective.It is very high during with the growth of about 1 mm/min of common speed in monocrystalline 6 that this graphical representation indicates the stratified density of defective.However, because when monocrystalline 6 was grown with the speed of about 2 mm/min, its defective stratified density was very little on the contrary, so can improve the quality of monocrystalline 6.
In addition, because hot buried body 16 is placed on the top of liquid 3, so can stop monocrystalline 6 to be avoided from well heater 4 photothermal heating.Therefore can increase thermograde ((dT)/(dx)), so also just increase the growth velocity of monocrystalline 6.
And because the sectional area on well heater 4 tops is less than the cross-sectional area of common heater, so the whole resistance value of well heater 4 is just high comparatively speaking.So liquid that can the heating and melting monocrystalline, the electric power of using to being equivalent to typical temperature is less than common electric power.Like this, the watt consumption of well heater 4 can reduce.
In according to device of the present invention, be not limited to above-described concrete device.On the basis of technical conceive of the present invention, can realize various remodeling.For example, only providing tapered section 4a, also can be enough, and does not constitute the groove 4d or the 4e of bifurcated.On the contrary, only constitute the groove 4d of bifurcated or 4e and do not constitute tapered section 4a and also be fine.In addition, as shown in Figure 4, the cross section of whole well heater 4 is done tapered, like this can be so that the top sectional area has reduced therefrom linearly.As shown in Figure 5, it also is feasible making recessed part on the top of well heater 4.As shown in Figure 6, also can open the different groove 4g of the degree of depth of some amount on the top of well heater 4.As shown in Figure 7, also can make width t on the top of well heater 4
1Width t than well heater bottom
2Narrower.Otherwise, also can make the top of well heater 4, and constitute the bottom of well heater 4 with the material of low resistivity with a kind of material of higher electric resistivity.
Fig. 8 is second kind of concrete scheme according to apparatus of the present invention.Well heater 4 is divided into two the well heater 18 on top and the well heater 19 of bottom in this device.In this specific form, the temperature of upper portion heater 18 is adjusted to the temperature that is higher than lower heater 19.In addition, if under the situation of using radio-frequency coil induction heating liquid 3, also can increase the number of turn of radio-frequency coil at the per unit length on top, and less in the number of turn of the every length in the bottom of radio-frequency coil.
Fig. 9 shows the third specific form according to apparatus of the present invention, electro-magnet 21 is being settled near cooling bell jar 10a in this device, so that magnet applies a magnetic field to the liquid 3 of melting material during pulling single crystal 6, promptly so-called MCZ(magnetic field caochralski) method.In this specific form, lead and be subjected to electromagnetic force because liquid 3 has certain electricity, so can suppress thermal convection.Thermal convection in this case has been suppressed, and this is because the temperature distribution in the well heater 4 is reflected among the temperature distribution of liquid 3 well, shown in Figure 12 A and 12B, can reduce the temperature of centre liquid, and increase the fluid temperature at peripheral position.Further reduced the middle part in addition and near the temperature head at liquid 3 surperficial positions (for first kind and second kind of specific form).The result is the growth velocity (for those equipment that do not apply magnetic field) that can further increase monocrystalline 6.In addition, though transversely applied magnetic field such as Fig. 9 at this equipment.But also can on the longitudinal direction of device, apply magnetic field.
Example 1:
20 kilograms of polycrystalline silicon materials are put into the crucible of 12 inch diameters, after melting material with regard to stretching material with growing single-crystal 6.Common method is that the liquid 3 of melting material solidifies at the 3a position with the growth velocity of 1.2 mm/min, connects the inwall of crucible 2 at this place's fluid surface.In any case, in according to method of the present invention,, just can come growing single-crystal 6 with the speed of growth of 1.5 mm/min having hot buried body 16 when being placed on above the liquid 3.In addition, if when being placed with hot buried body 16 and in addition well heater 4 is made the groove 4d of tapered section 4a and bifurcated and 4e, just can grow the monocrystalline 6 of 4 English inch diameters with the growth velocity of 2 mm/min.
Example 2:
The same manner is put into the crucible of 12 inch diameters with 20 kilograms of polycrystalline silicon materials, treats after the material fusion with regard to stretching material with growing single-crystal 6.Be provided with hot buried body 16 in above the liquid 3 and well heater 4 make under the situation with tapered section 4a and branched channels 4d and 4e, can be with the growth velocity growing single-crystal 6 of 2 mm/min.In addition, be applied with under the situation in magnetic field.As shown in Figure 9, then can increase growth velocity to 2.3 mm/min.
Claims (10)
1, in single-crystal growing apparatus, comprise the crucible of placing crystalline material liquid, the heating unit that the heating crystal becomes liquid phase, and from melt the device of pulling single crystal, it is characterized in that: described heating unit is designed so that part that the fusion plane of crystal connects the crucible inwall is heated to than crucible other parts and will exceeds some amount.
2, single-crystal growing apparatus as claimed in claim 1.It also comprises hot buried body in addition, and it is being placed round the monocrystalline that lifts, so that separate the heat that is radiated pulling single crystal from described well heater.
3, single-crystal growing apparatus as claimed in claim 1.Said here well heater is a kind of garden tubular electro-conductive material, has a plurality of upper opening grooves and a plurality of lower openings groove.They both along well heater garden tube extend axially and both alternately are arranged on the garden Zhou Fangxiang of described well heater, and at interval with the angle of rule.Described garden tubular material further constitutes tapered section at an upper portion thereof.
4, single-crystal growing apparatus as claimed in claim 1.Described here well heater is a kind of garden tubular electro-conductive material.Have a plurality of upper opening grooves and a plurality of lower openings groove, their both extending axially along well heater garden tube, and both alternately are arranged on the garden Zhou Fangxiang of described well heater, and with the angle of regulation, described garden tubular material does not further have the groove of bifurcated in the upper end of each lower groove at interval.
5, single-crystal growing apparatus as claimed in claim 1.Described here well heater is a kind of garden tubular electro-conductive material, has a plurality of upper opening grooves and a plurality of lower openings groove.They both along the extending axially of well heater garden tube, and alternately be arranged on the garden Zhou Fangxiang of described well heater, and the angle of interval rule.The cross section of described well heater constitutes sharp cone distal so that make the cross-sectional area rectilinearity ground on top reduce.
6, single-crystal growing apparatus as claimed in claim 1, described here well heater are a kind of garden tubular electro-conductive materials, have a plurality of upper opening grooves and a plurality of lower openings groove.Their both extending axially along well heater garden tube.And both alternately are arranged on the garden Zhou Fangxiang of described heating, and with angle same at interval.The top of described well heater has an arcual recessed part at least, so that reduce the cross-sectional area of described well heater.
7, single-crystal growing apparatus as claimed in claim 1.Described here well heater is a kind of garden tubular electro-conductive material, has a plurality of upper opening grooves and a plurality of lower openings groove.They both along the extending axially of well heater garden tube, and both alternately are arranged on the garden Zhou Fangxiang of described well heater, and with identical angle intervals.A plurality of right angle groove parts are made on the top of described well heater, so that reduce the cross-sectional area of described well heater.
8, single-crystal growing apparatus as claimed in claim 1.Described here well heater is a kind of garden tubular electro-conductive material, has a plurality of upper opening grooves and a plurality of lower openings groove.They both along the extending axially of well heater garden tube, and both alternately are arranged on the garden Zhou Fangxiang of described well heater, and angle same is at interval.The upper width of described well heater is narrower than the lower width of described well heater.
9, single-crystal growing apparatus as claimed in claim 1, described here well heater is divided into two, i.e. garden, upper and lower tubular electro-conductive material, the temperature that the top heating material is heated will be higher than the temperature that the bottom material can reach.
10, single-crystal growing apparatus as claimed in claim 1.Apply a magnetic field for described well heater here.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85101043 CN1015187B (en) | 1984-08-06 | 1985-04-01 | Monocrystal growing apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16465284A JPS60155595A (en) | 1984-08-06 | 1984-08-06 | Method for growing crystal |
| CN 85101043 CN1015187B (en) | 1984-08-06 | 1985-04-01 | Monocrystal growing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85101043A true CN85101043A (en) | 1987-01-10 |
| CN1015187B CN1015187B (en) | 1991-12-25 |
Family
ID=25741343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 85101043 Expired CN1015187B (en) | 1984-08-06 | 1985-04-01 | Monocrystal growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1015187B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1766179B (en) * | 2004-10-19 | 2010-10-27 | 希特隆股份有限公司 | High quality single crystal growing method |
| CN102245813A (en) * | 2008-12-08 | 2011-11-16 | Ii-Vi有限公司 | Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating |
| CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
| CN103160913A (en) * | 2011-12-18 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Temperature gradient controlling device of crystal growth and method thereof |
| CN104818524A (en) * | 2015-04-28 | 2015-08-05 | 汤灏 | Method and heater for improving quality of monocrystal silicon grown by Czochralski method |
| CN106222736A (en) * | 2016-10-17 | 2016-12-14 | 宁夏协鑫晶体科技发展有限公司 | Heater for pulling of crystals |
| CN106637388A (en) * | 2015-11-03 | 2017-05-10 | 有研光电新材料有限责任公司 | Heat field structure for growth of low-dislocation single crystals by czochralski method and growing process of single crystal |
| CN106868584A (en) * | 2015-12-10 | 2017-06-20 | 有研半导体材料有限公司 | A kind of monocrystalline furnace resistor heater and the method that silicon single crystal is prepared using the resistance heater |
| CN107779945A (en) * | 2016-08-25 | 2018-03-09 | 上海新昇半导体科技有限公司 | Heater and single crystal pulling stove thermal field structure |
| CN109898132A (en) * | 2017-12-11 | 2019-06-18 | 有研半导体材料有限公司 | A kind of single crystal growing furnace heater of Novel structure |
| CN112267147A (en) * | 2020-09-29 | 2021-01-26 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace thermal field heater and single crystal furnace |
| CN112323140A (en) * | 2020-10-15 | 2021-02-05 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace thermal field heater assembly and single crystal furnace |
-
1985
- 1985-04-01 CN CN 85101043 patent/CN1015187B/en not_active Expired
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1766179B (en) * | 2004-10-19 | 2010-10-27 | 希特隆股份有限公司 | High quality single crystal growing method |
| CN102245813A (en) * | 2008-12-08 | 2011-11-16 | Ii-Vi有限公司 | Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating |
| CN102245813B (en) * | 2008-12-08 | 2014-08-06 | Ii-Vi有限公司 | Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating |
| US9228274B2 (en) | 2008-12-08 | 2016-01-05 | Ii-Vi Incorporated | Axial gradient transport growth process and apparatus utilizing resistive heating |
| CN103160913A (en) * | 2011-12-18 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Temperature gradient controlling device of crystal growth and method thereof |
| CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
| CN104818524A (en) * | 2015-04-28 | 2015-08-05 | 汤灏 | Method and heater for improving quality of monocrystal silicon grown by Czochralski method |
| CN106637388A (en) * | 2015-11-03 | 2017-05-10 | 有研光电新材料有限责任公司 | Heat field structure for growth of low-dislocation single crystals by czochralski method and growing process of single crystal |
| CN106868584A (en) * | 2015-12-10 | 2017-06-20 | 有研半导体材料有限公司 | A kind of monocrystalline furnace resistor heater and the method that silicon single crystal is prepared using the resistance heater |
| CN106868584B (en) * | 2015-12-10 | 2019-06-18 | 有研半导体材料有限公司 | A kind of monocrystalline furnace resistor heater and the method for preparing silicon single crystal using the resistance heater |
| CN107779945A (en) * | 2016-08-25 | 2018-03-09 | 上海新昇半导体科技有限公司 | Heater and single crystal pulling stove thermal field structure |
| CN107779945B (en) * | 2016-08-25 | 2020-11-27 | 上海新昇半导体科技有限公司 | Special-shaped heater and thermal field structure of single crystal pulling furnace |
| CN106222736A (en) * | 2016-10-17 | 2016-12-14 | 宁夏协鑫晶体科技发展有限公司 | Heater for pulling of crystals |
| CN109898132A (en) * | 2017-12-11 | 2019-06-18 | 有研半导体材料有限公司 | A kind of single crystal growing furnace heater of Novel structure |
| CN112267147A (en) * | 2020-09-29 | 2021-01-26 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace thermal field heater and single crystal furnace |
| WO2022068700A1 (en) * | 2020-09-29 | 2022-04-07 | 西安奕斯伟材料科技有限公司 | Hot zone heater of single crystal furnace, and single crystal furnace |
| TWI803005B (en) * | 2020-09-29 | 2023-05-21 | 大陸商西安奕斯偉材料科技有限公司 | Single crystal furnace thermal field heater and single crystal furnace |
| CN112323140A (en) * | 2020-10-15 | 2021-02-05 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace thermal field heater assembly and single crystal furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1015187B (en) | 1991-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1020481C (en) | Manufacturing equipment for single silicon crystal | |
| CN85101043A (en) | Single-crystal growing apparatus (equipment) | |
| JP3892496B2 (en) | Semiconductor single crystal manufacturing method | |
| CN1069298A (en) | Utilize the method for the Combination Control silicon crystal oxygen level of cusped magnetic field and crystal and crucible rotation | |
| CN1317058A (en) | Electrical resistance heater for crystal growing apparatus and its method of use | |
| CN1016191B (en) | Production of high-oxygen-content silicon monocrystal substrate for semiconductor devices | |
| US7524375B1 (en) | Growth of uniform crystals | |
| KR101574749B1 (en) | Upper heater for manufacturing single crystal, single crystal manufacturing apparatus and single crystal manufacturing method | |
| EP0747515B1 (en) | Apparatus and method for producing single crystal using Czochralski technique | |
| EP0798404B1 (en) | Apparatus for manufacturing single crystal of silicon | |
| CA1290654C (en) | Monocrystal growing apparatus | |
| JPS62256787A (en) | Method and device for growing single crystal | |
| CN1195107C (en) | Silicon ingot growing device | |
| JPS6168389A (en) | Apparatus for growing single crystal | |
| US3494745A (en) | Method of growing single crystal in a horizontally disposed rod | |
| US4847052A (en) | Device for growing single crystals | |
| CN85100591A (en) | Pulling single crystal silicon method and device thereof in the non-linear magnetic field | |
| KR20020071412A (en) | Large Crystal Growing Apparatus Having Vertical and Horizontal Temperature Gradients and Growing Method thereof | |
| JP3079991B2 (en) | Single crystal manufacturing apparatus and manufacturing method | |
| JP3018738B2 (en) | Single crystal manufacturing equipment | |
| JP3498330B2 (en) | Single crystal growth equipment | |
| EP2504470A1 (en) | Method and apparatus for producing single crystals composed of semiconductor material | |
| JPH0769778A (en) | Equipment for single crystal growth | |
| JP3213806B2 (en) | Method for growing lithium borate single crystal | |
| CN212533193U (en) | Cooling device and crystal pulling system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C13 | Decision | ||
| C14 | Grant of patent or utility model | ||
| C17 | Cessation of patent right |